CN109904247B - Photodetector based on graphene pn junction and manufacturing method and application thereof - Google Patents
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Abstract
The invention discloses a photodetector based on a graphene pn junction, which comprises: a graphene layer comprising a first region and a second region that cooperate to form an interdigitated structure; a first electrode pattern for making the first region p-type when a negative voltage is applied; a second electrode pattern for making the second region n-type when a positive voltage is applied thereto; and two or more contact electrodes electrically connected to the first region and the second region, respectively. The photodetector based on the graphene pn junction can effectively realize the light detection of ultraviolet, near-infrared and visible light wave bands, has high light responsivity and sensitivity and short light responsivity time, and can normally work at any temperature of 50-500K.
Description
Technical Field
The invention relates to a photodetector, in particular to a photodetector based on a graphene pn junction and a manufacturing method and application thereof.
Background
At the heart of modern electronics is the ability to control the electronic properties of materials through the application of voltages. In many cases, the electric field effect allows the carrier concentration in the semiconductor device, and thus the current passing through it, to be varied. As the silicon dominated semiconductor industry approaches the limits of prior art performance improvements, unconventional materials whose performance can be controlled by electric fields are continually being excavated. Since the carriers in the graphene follow a special quantum tunneling effect and do not generate back scattering when encountering impurities, the graphene has strong conductivity and high carrier mobility. The carrier mobility of the graphene is less influenced by temperature change, and the electron mobility of the single-layer graphene is 15,000cm at any temperature between 50 and 500K2V-1s-1Left and right. Research finds that the single-layer graphene has obvious bipolar electric field effect and is applied to the grapheneDifferent gate voltages can change their fermi level and hence the type of carriers, which are continuously modulated between electrons and holes, and the concentration can be as high as 1013cm-2The mobility may exceed 15,000cm2V-1s-1。
When the n-type semiconductor and the p-type semiconductor are on the same semiconductor substrate, the interface of the n-type semiconductor and the p-type semiconductor forms a space charge region which is called a pn junction. Electrons in the pn junction diffuse to the P region, holes diffuse to the n region, the P region is negatively charged, the n region is positively charged, a space charge region composed of immobile ions is formed, and a built-in electric field is generated to drift minority carriers and prevent the electrons and the holes from continuously diffusing so as to achieve balance.
The light detector can detect the light power incident on the light receiving surface and convert the change of the light power into corresponding current. When the light irradiates the pn junction, when the energy of incident photons is larger than the forbidden bandwidth of the material, new electron-hole pairs are generated at the junction area and move under the action of the built-in electric field of the pn junction, the photo-generated holes flow to the p area, the photo-generated electrons flow to the n area, a photo-generated electric field opposite to the built-in electric field is generated, and the current is generated after the circuit is switched on. Since single-layer graphene is a zero-bandgap material, the energy bands of electrons and holes meet at the dirac point, so that the graphene has good optical characteristics, and the absorption rate is about 2.3% in a wide wavelength range. In the thickness range of a few layers of graphene, the absorption rate is increased by 2.3% for each layer of thickness increase.
Xiaoke et al propose a graphene photodetector, which comprises: a substrate; a first metal electrode pattern is formed on the substrate; a second metal electrode pattern is formed on the first metal electrode pattern; and any two adjacent first metal electrodes: a second metal electrode is formed on one first metal electrode, and the other first metal electrode is not provided with the second metal electrode; graphene is formed on the first metal electrode pattern and the second metal electrode pattern, the work function of the graphene is between the work function of the first metal electrode and the work function of the second metal electrode, metal contact layer patterns are further formed on the graphene, and each metal contact electrode corresponds to the first metal electrode and the second metal electrode. The influence on the characteristics such as graphene mobility and the like in the device preparation process is reduced, the performance of the prepared detector is improved, good electrode contact is formed, and the frequency range of photoelectric induction is enlarged.
Nabong et al propose a graphene photodetector based on a composite substrate, wherein a gate electrode layer of the graphene photodetector is made of lightly doped silicon with the conductivity of 1-10 Ω cm. The source electrode and the drain electrode are connected with an external power supply, and the single-layer graphene electron transmission layer is arranged on the insulating medium layer; a gate electrode layer is arranged below the insulating medium layer; the drain and gate electrode layers are connected by a gate power supply. The detector simultaneously realizes ultra-fast optical response and high photoelectric detection efficiency. In addition, the detector also displays a broad band response from visible to near infrared. More importantly, the graphene photoelectric detector does not need a complex preparation process and is completely matched with the existing mature silicon process.
The Wangjun et al provide a PIN structure graphene optical detector with adjustable Fermi energy level, which mainly utilizes graphene materials to make a detector with a field effect transistor structure and a PIN structure which are combined, and realizes high-response rapid detection of ultraviolet to infrared broadband.
However, the aforementioned graphene photodetectors all have the following drawbacks, including:
1) the work function of the metal electrode is strictly required, and the cost is higher.
2) The electrode or graphene needs to be doped, so that impurities are easily introduced, and the graphene cannot exert the advantage of high mobility so as to accelerate the photoresponse speed.
3) The device structure process is complicated, the optical detection efficiency is low, and the sensitivity is poor.
Disclosure of Invention
The invention mainly aims to provide a photodetector based on a graphene pn junction, a manufacturing method and application thereof, so that the defects of the prior art are overcome.
In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps:
the embodiment of the invention provides a photodetector based on a graphene pn junction, which comprises:
a graphene layer comprising a first region and a second region that cooperate to form an interdigitated structure;
a first electrode pattern for making the first region p-type when a negative voltage is applied;
a second electrode pattern for making the second region n-type when a positive voltage is applied thereto; and
and more than two contact electrodes respectively electrically connected with the first region and the second region.
In some embodiments, the graphene pn junction-based photodetector comprises:
a first electrode pattern including a first metal electrode pattern,
a first dielectric layer formed on the first metal electrode pattern,
a graphene layer disposed on the first dielectric layer,
a second dielectric layer formed on the graphene layer,
forming a second electrode pattern on a second dielectric layer, wherein the second electrode pattern comprises a second metal electrode pattern, and the orthographic projection of the first metal electrode pattern and the orthographic projection of the second metal electrode pattern on a plane parallel to the graphene layer form an inserting finger structure; and more than two contact electrodes which are arranged at intervals and are respectively in electrical contact with the graphene layer, wherein the contact electrodes comprise metal contact electrodes.
Further, the first metal electrode pattern may be formed on a substrate, which is an insulator or a semiconductor.
Further, the two or more metal contact electrodes may be disposed at intervals along a length direction of the electrode fingers in the first metal electrode pattern or the second metal electrode pattern.
Further, either one of the first metal electrode pattern and the second metal electrode pattern is applied with a negative voltage to form p-type graphene from graphene in a corresponding region of the graphene layer, and the other one is applied with a positive voltage to form n-type graphene from graphene in a corresponding region of the graphene layer.
Furthermore, the positive voltage and the negative voltage have the same magnitude and opposite directions.
Further, the first dielectric layer is an insulator, and the second dielectric layer is a light-transmitting insulator.
The embodiment of the invention also provides a manufacturing method for manufacturing the photodetector based on the graphene pn junction, which comprises the following steps: a first metal electrode pattern, a first dielectric layer, a graphene layer, a second dielectric layer, a second metal electrode pattern and a metal contact electrode are sequentially manufactured on a substrate.
The embodiment of the invention also provides an optical detection method, which comprises the following steps:
providing said graphene pn junction based photodetector;
connecting the more than two metal contact electrodes in the optical detector into a detection circuit, applying negative voltage to any one of the first metal electrode pattern and the second metal electrode pattern to enable graphene in a corresponding region in the graphene layer to form p-type graphene, and applying positive voltage to the other one of the first metal electrode pattern and the second metal electrode pattern to enable graphene in the corresponding region in the graphene layer to form n-type graphene;
and irradiating the light receiving surface of the light detector with light to be tested.
Compared with the prior art, the invention has at least the following advantages:
1) the provided optical detector based on the graphene pn junction can effectively realize optical detection of ultraviolet, near-infrared and visible light wave bands;
2) the provided photodetector based on the graphene pn junction does not need to dope graphene or a substrate, so that the problems of impurities and damage caused by a doping process are solved;
3) the provided photodetector based on the graphene pn junction can effectively separate photo-generated electrons from holes, so that the photoresponse and the sensitivity are improved;
4) the provided photodetector based on the graphene pn junction adopts graphene as a part of the electrode, so that the mobility of a current carrier is improved, and the photoresponse time is reduced;
5) the provided light detector based on the graphene pn junction can normally work at any temperature between 50 and 500K because the carrier mobility in the graphene is less influenced by temperature change.
Drawings
Fig. 1 is a top view of a graphene pn junction based photodetector in an exemplary embodiment of the invention.
Fig. 2 is a cross-sectional view of a graphene pn junction based photodetector in an exemplary embodiment of the invention.
Fig. 3 is a top view of a graphene pn junction based photodetector prior to depositing a second metal electrode pattern in an exemplary embodiment of the invention.
Description of reference numerals: the device comprises a substrate 1, a first metal electrode pattern 2, a first dielectric layer 3, a graphene layer 4, a second dielectric layer 5, a second metal electrode pattern 6, a metal contact electrode 7, a first metal contact electrode 7a, a second metal contact electrode 7b, a negative voltage 8 and a positive voltage 9.
Detailed Description
One aspect of the embodiments of the present invention provides a photodetector based on a graphene pn junction, including:
a graphene layer comprising a first region and a second region that cooperate to form an interdigitated structure;
a first electrode pattern for making the first region p-type when a negative voltage is applied;
a second electrode pattern for making the second region n-type when a positive voltage is applied thereto; and
and more than two contact electrodes respectively electrically connected with the first region and the second region.
In some embodiments, the graphene pn junction-based photodetector comprises:
a first electrode pattern including a first metal electrode pattern,
a first dielectric layer formed on the first metal electrode pattern,
a graphene layer disposed on the first dielectric layer,
a second dielectric layer formed on the graphene layer,
forming a second electrode pattern on the second dielectric layer, wherein the second electrode pattern comprises a second metal electrode pattern, and orthographic projections of the first metal electrode pattern and the second metal electrode pattern on a plane parallel to the graphene layer form an inserting finger structure (the orthographic projections respectively correspond to the first region and the second region);
the contact electrode that sets up with more than two intervals of graphite alkene layer electrical contact respectively, the contact electrode includes metal contact electrode.
Further, the first metal electrode pattern may be formed on a substrate, which is an insulator or a semiconductor.
Preferably, the substrate has a thickness of 50 to 1000 μm.
Further, the two or more metal contact electrodes may be disposed at intervals along a length direction of the electrode fingers in the first metal electrode pattern or the second metal electrode pattern.
Further, either one of the first metal electrode pattern and the second metal electrode pattern is applied with a negative voltage to form p-type graphene from graphene in a corresponding region of the graphene layer, and the other one is applied with a positive voltage to form n-type graphene from graphene in a corresponding region of the graphene layer.
Furthermore, the positive voltage and the negative voltage have the same magnitude and opposite directions. Preferably, the magnitude of the positive voltage and the magnitude of the negative voltage are 1-100V.
Preferably, the width of the electrode fingers in the first metal electrode pattern and the second metal electrode pattern is 1-100 μm.
Further, the graphene layer is preferably single-layer graphene.
Further, the first dielectric layer is an insulator.
Preferably, the material of the first dielectric layer includes SiO2，Si3N4Or AlN, etc., but not limited thereto.
Preferably, the thickness of the first dielectric layer is 1-1000 nm.
Further, the second dielectric layer is a light-transmitting insulator, and particularly an insulator with good light-transmitting performance.
Preferably, the first and second liquid crystal materials are,the second dielectric layer is made of SiO2And the like, but are not limited thereto.
Preferably, the thickness of the second dielectric layer is 1-1000 nm.
Further, the first metal electrode pattern, the second metal electrode pattern, and the metal contact electrode may be formed of a metal material, for example, a material of the metal material may include a metal with good conductivity, such as Ag, Au, Cu, or Pt, but is not limited thereto.
Preferably, the thickness of the first metal electrode pattern, the second metal electrode pattern and the metal contact electrode is 10-1000 nm.
Another aspect of the embodiments of the present invention provides a method for manufacturing the graphene pn junction-based photodetector, including: a first metal electrode pattern, a first dielectric layer, a graphene layer, a second dielectric layer, a second metal electrode pattern and a metal contact electrode are sequentially manufactured on a substrate.
Another aspect of the embodiments of the present invention provides a light detection method, including:
providing said graphene pn junction based photodetector;
connecting the more than two metal contact electrodes in the optical detector into a detection circuit, applying negative voltage to any one of the first metal electrode pattern and the second metal electrode pattern to enable graphene in a corresponding region in the graphene layer to form p-type graphene, and applying positive voltage to the other one of the first metal electrode pattern and the second metal electrode pattern to enable graphene in the corresponding region in the graphene layer to form n-type graphene;
and irradiating the light receiving surface of the light detector with light to be tested.
According to the invention, by utilizing the bipolar electric field effect of graphene, the characteristics of strong conductivity, high carrier mobility, good optical characteristics and the like, a plurality of pn junctions are formed in the vertical direction within the range corresponding to the first metal electrode pattern and the second metal electrode pattern through the graphene, so that a plurality of built-in electric fields are formed. Since graphene has good optical properties and can respond to ultraviolet, near-infrared and visible light wave bands, when a pn junction is irradiated by light, a new electron-hole pair is generated in the junction region. Under the action of a built-in electric field, photogenerated electrons and holes are separated: the photogenerated holes flow to the p-region and the photogenerated electrons flow to the n-region. The metal contact electrode of the device is grounded, and voltage is applied at the same time, so that p-region photo-generated holes and n-region photo-generated electrons migrate to the upper end and the lower end of the metal contact electrode through graphene, a large amount of separation and accumulation of the photo-generated electrons and holes are realized, the concentration of current carriers in the device is increased, the conductivity of the device is further improved, and the photoresponse and the sensitivity of the device are improved; meanwhile, as part of graphene is in direct contact with the metal contact electrode, the high mobility advantage of the graphene is exerted, the photoresponse time of the device is reduced, and the optical detection efficiency is improved.
In addition, in the manufacturing process of the photodetector based on the graphene pn junction, the graphene or the substrate does not need to be doped, so that the problems of impurities and damage caused by a doping process can be solved.
The technical solution of the present invention is explained in more detail below with reference to the accompanying drawings and specific embodiments.
Referring to fig. 1-2, in an exemplary embodiment of the invention, a graphene pn junction-based photodetector includes a substrate 1, a first metal electrode pattern 2 is formed on the substrate 1, a first dielectric layer 3 is formed on the first metal electrode pattern 2, a graphene layer 4 is formed on the first dielectric layer 3, a second dielectric layer 5 is formed on the graphene layer 4, and a second metal electrode pattern 6 is formed on the second dielectric layer 5, and the fingers of the first metal electrode pattern 2 and the fingers of the second metal electrode pattern 6 are crossed one by one (more specifically, the two fingers are projected on the graphene layer to be crossed), that is, the second metal electrode pattern 6 is not present on the first metal electrode pattern 2. Meanwhile, metal contact electrodes 7a, 7b are formed at both ends of the photodetector, and directly contact the graphene layer 4. Applying a negative voltage 8 to the first metal electrode pattern to lower the fermi level of the corresponding graphene above the first metal electrode pattern 2 to form p-type graphene; and applying a positive voltage 9 to the second metal electrode pattern can raise the fermi level of the corresponding graphene below the second metal electrode pattern 6 to form n-type graphene. Conversely, a positive voltage may be applied to the first metal electrode pattern, and a negative voltage may be applied to the second metal electrode pattern. And the negative voltage is applied to enable the graphene in the region corresponding to the first metal electrode pattern in the graphene layer to form p-type graphene, and the positive voltage is applied to enable the graphene in the region corresponding to the second metal electrode pattern in the graphene layer to form n-type graphene. The positive voltage and the negative voltage have the same magnitude and opposite directions. For example, the positive voltage and the negative voltage can be 1-100V.
The photodetector based on the graphene pn junction can effectively realize the light detection of ultraviolet, near-infrared and visible light wave bands, can effectively separate photon-generated electrons from holes, and improves the light responsivity and sensitivity, and the graphene is used as a part of an electrode, so that the mobility of carriers is improved, the light responsivity time is reduced, and in addition, the carrier mobility in the graphene is less influenced by temperature change, so that the photodetector can normally work at any temperature between 50 and 500K.
In this embodiment, a method for manufacturing the graphene pn junction-based photodetector may include the following steps:
1) an insulator substrate (or semiconductor substrate) of 50-1000 μm is prepared.
2) And transferring the first metal electrode pattern to the surface of the substrate in the step 1) through photoetching.
3) And etching the surface of the device structure obtained in the step 2) to a depth of 10-1000nm by using etching technologies such as oxygen plasma, reactive ion etching or ion beam etching.
4) Depositing 10-1000nm metal such as Ag, Au, Cu, Pt and the like on the surface of the device obtained in the step 3) by using a metal deposition technology such as electron beam evaporation or sputtering, wherein the thickness of the deposited metal is the same as the etching depth, and stripping the redundant metal on the surface to form a first metal electrode pattern.
5) Growing a 1-1000nm insulating layer on the surface of the device obtained in step 4) by using the dielectric layer deposition technology such as Atomic Layer Deposition (ALD) or Chemical Vapor Deposition (CVD) as a first dielectric layer, such as SiO2、Si3N4AlN and the like.
6) Growing a graphene material and transferring the graphene material to the surface of the material structure in the device obtained in the step 5) or directly growing graphene on the surface of the material structure in the device obtained in the step 5).
7) Growing a 1-1000nm insulating layer on the surface of the graphene in the device obtained in the step 6) as a second dielectric layer, such as SiO by using a dielectric layer deposition technology such as Atomic Layer Deposition (ALD) or chemical vapor deposition2。
8) And removing the redundant second dielectric layer, graphene and first dielectric layer by photoetching, wherein the top view of the obtained device is shown in fig. 3.
9) And (3) transferring the second metal electrode pattern and the metal contact layer pattern to the surface of the device obtained in the step 8) through photoetching.
10) Depositing 10-1000nm metal such as Ag, Au, Cu, Pt and the like on the surface of the device obtained in the step 9) by using a metal deposition technology such as electron beam evaporation or sputtering, and the like, and stripping the redundant metal on the surface to form a second metal electrode pattern and a metal contact electrode pattern.
In the manufacturing process, the graphene or the substrate does not need to be doped, so that the problems of impurities and damage caused by the doping process can be solved.
A method for detecting by applying the graphene pn junction-based photodetector of the embodiment can include:
and applying negative voltage in the first metal electrode pattern and positive voltage in the second metal electrode pattern, wherein the positive voltage and the negative voltage have the same voltage magnitude of 1-100V and are opposite in direction.
12) Two metal contact electrodes are connected into a test circuit, and when the light receiving surface of the optical detector is irradiated by light, a photoelectric signal can be detected.
The detection range of the photodetector based on the graphene pn junction covers ultraviolet, near infrared and visible light wave bands, the working temperature is 50-500K, and the photoresponse and the sensitivity are excellent.
It should be noted that the terms "comprises," "comprising," or any other variation thereof, in this specification are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
It should be understood that the above preferred embodiments are only for illustrating the present invention, and other embodiments of the present invention are also possible, but those skilled in the art will be able to adopt the technical teaching of the present invention and equivalent alternatives or modifications thereof without departing from the scope of the present invention.
Claims (18)
1. A graphene pn junction based photodetector, comprising: the graphene layer, the first electrode pattern, the second electrode pattern, the first medium layer, the second medium layer and more than two contact electrodes arranged at intervals; the first electrode pattern comprises a first metal electrode pattern, and the second electrode pattern comprises a second metal electrode pattern; the first dielectric layer is formed on the first metal electrode pattern, the graphene layer is arranged on the first dielectric layer, the second dielectric layer is formed on the graphene layer, and the second electrode pattern is formed on the second dielectric layer; orthographic projections of the first metal electrode pattern and the second metal electrode pattern on a plane parallel to the graphene layer form an inserting finger structure, and the graphene layer comprises a first region and a second region which are matched with each other to form the inserting finger structure; the more than two contact electrodes arranged at intervals are respectively in electrical contact with the first area and the second area, and the contact electrodes comprise metal contact electrodes; the first electrode pattern is used for making the first region in a p-type when a negative voltage is applied, and the second electrode pattern is used for making the second region in an n-type when a positive voltage is applied.
2. The graphene pn junction based photodetector of claim 1, wherein: the first metal electrode pattern is formed on a substrate, and the substrate is an insulator or a semiconductor.
3. The graphene pn junction based photodetector of claim 2, wherein: the thickness of the substrate is 50-1000 μm.
4. The graphene pn junction based photodetector of claim 1, wherein: the more than two metal contact electrodes are arranged at intervals along the length direction of the electrode insertion finger in the first metal electrode pattern or the second metal electrode pattern.
5. The graphene pn junction based photodetector of claim 1, wherein: the positive voltage and the negative voltage have the same magnitude and opposite directions.
6. The graphene pn junction based photodetector of claim 5, wherein: the positive voltage and the negative voltage are 1-100V.
7. The graphene pn junction based photodetector of claim 1, wherein: the width of the electrode insertion fingers in the first metal electrode pattern and the second metal electrode pattern is 1-100 mu m.
8. The graphene pn junction based photodetector of claim 1, wherein: the graphene layer is single-layer graphene.
9. The graphene pn junction based photodetector of claim 1, wherein: the first dielectric layer is an insulator.
10. The graphene pn junction based photodetector of claim 9, wherein: the first dielectric layer is made of SiO2、Si3N4Or AlN.
11. The graphene pn junction based photodetector of claim 9, wherein: the thickness of the first dielectric layer is 1-1000 nm.
12. The graphene pn junction based photodetector of claim 1, wherein: the second dielectric layer is a light-transmitting insulator.
13. The graphene pn junction based photodetector of claim 12, wherein: the second dielectric layer is made of SiO2。
14. The graphene pn junction based photodetector of claim 12, wherein: the thickness of the second dielectric layer is 1-1000 nm.
15. The graphene pn junction based photodetector of claim 1, wherein: the first metal electrode pattern, the second metal electrode pattern and the metal contact electrode are made of Ag, Au, Cu or Pt.
16. The graphene pn junction based photodetector of claim 1, wherein: the thicknesses of the first metal electrode pattern, the second metal electrode pattern and the metal contact electrode are 10-1000 nm.
17. A method of fabricating a graphene pn junction based photodetector as claimed in any one of claims 1 to 16, comprising: a first metal electrode pattern, a first dielectric layer, a graphene layer, a second dielectric layer, a second metal electrode pattern and a metal contact electrode are sequentially manufactured on a substrate.
18. A method of optical detection, comprising:
providing a graphene pn junction based photodetector of any one of claims 1-16;
connecting the more than two metal contact electrodes in the optical detector into a detection circuit, applying negative voltage to any one of the first metal electrode pattern and the second metal electrode pattern to enable graphene in a corresponding region in the graphene layer to form p-type graphene, and applying positive voltage to the other one of the first metal electrode pattern and the second metal electrode pattern to enable graphene in the corresponding region in the graphene layer to form n-type graphene;
and irradiating the light receiving surface of the light detector with light to be tested.
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