KR101457573B1 - Thin film type Solar Cell, and Method for manufacturing the same - Google Patents
Thin film type Solar Cell, and Method for manufacturing the same Download PDFInfo
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- KR101457573B1 KR101457573B1 KR1020080066931A KR20080066931A KR101457573B1 KR 101457573 B1 KR101457573 B1 KR 101457573B1 KR 1020080066931 A KR1020080066931 A KR 1020080066931A KR 20080066931 A KR20080066931 A KR 20080066931A KR 101457573 B1 KR101457573 B1 KR 101457573B1
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- layer
- separator
- rear electrode
- photoelectric conversion
- electrode layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
According to the present invention, there is provided a method of manufacturing a light emitting device, comprising: sequentially laminating a front electrode layer, a photoelectric conversion portion, and a rear electrode layer on a substrate; Removing a predetermined region of the front electrode layer, the photoelectric conversion portion, and the rear electrode layer to form a first separator; Removing a predetermined region of the photoelectric conversion portion and the rear electrode layer to form a contact portion; Removing a predetermined region of the rear electrode layer to form a second separator; And forming a metal layer electrically connecting the front electrode layer and the rear electrode layer through the contact portion. The present invention also relates to a thin film solar cell fabricated by the method,
According to the present invention, since the front electrode layer, the photoelectric conversion portion, and the rear electrode layer are sequentially stacked on the substrate, and then the first separator, the contact and the second separator are formed, There is no need to repeatedly use ice equipment, which simplifies the construction of the manufacturing equipment, shortens the manufacturing process time, and improves the productivity.
Thin-film solar cell, metal layer
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film solar cell, and more particularly, to a thin film solar cell having a plurality of unit cells connected in series.
Solar cells are devices that convert light energy into electrical energy using the properties of semiconductors.
The structure and principle of a solar cell will be briefly described. A solar cell has a PN junction structure in which a P (positive) semiconductor and an N (negative) semiconductor are bonded. When solar light enters the solar cell having such a structure, Holes and electrons are generated in the semiconductor due to the energy of the incident sunlight. At this time, the holes (+) move toward the P-type semiconductor due to the electric field generated at the PN junction, (-) is moved toward the N-type semiconductor to generate electric potential, thereby generating electric power.
Such a solar cell can be classified into a substrate type solar cell and a thin film type solar cell.
The substrate type solar cell is a solar cell manufactured using a semiconductor material itself such as silicon as a substrate, and the thin film type solar cell is formed by forming a semiconductor in the form of a thin film on a substrate such as glass to manufacture a solar cell.
Although the substrate type solar cell has a somewhat higher efficiency than the thin film type solar cell, there is a limitation in minimizing the thickness in the process, and a manufacturing cost is increased because an expensive semiconductor substrate is used.
Though the efficiency of the thin-film solar cell is somewhat lower than that of the substrate-type solar cell, the thin-film solar cell can be manufactured in a thin thickness and can be made of a low-cost material.
The thin-film solar cell is manufactured by forming a front electrode on a substrate such as glass, forming a semiconductor layer on the front electrode, and forming a rear electrode on the semiconductor layer. Since the front electrode forms a light receiving surface on which light is incident, a transparent conductive material such as ZnO is used as the front electrode. As the substrate becomes larger, the power loss due to the resistance of the transparent conductive material increases .
Therefore, a method has been devised in which a thin film solar cell is divided into a plurality of unit cells and a plurality of unit cells are connected in series so as to minimize the power loss due to the resistance of the transparent conductive material.
Hereinafter, a method of manufacturing a thin film solar cell having a plurality of unit cells connected in series will be described with reference to the drawings.
1A to 1G are cross-sectional views illustrating a conventional manufacturing process of a thin film solar cell having a plurality of unit cells connected in series.
First, as shown in FIG. 1A, a
Next, as shown in FIG. 1B, a predetermined region of the
Next, as shown in FIG. 1C, a
Next, as shown in FIG. 1D, a predetermined region of the
Next, as shown in FIG. 1E, a
Next, as shown in FIG. 1F, a predetermined region of the
However, such a conventional method of manufacturing a thin film solar cell has the following problems.
1A), a step of forming a first separator 25 (see FIG. 1B), a step of forming a
1C) forming the
Therefore, in order to complete a thin film solar cell in the related art, the
To solve this problem, in order to prevent the introduction of external air into the vacuum deposition apparatus during the process of charging the substrate into the vacuum deposition apparatus under atmospheric pressure, The substrate is flowed into the vacuum deposition apparatus while the external air is prevented from flowing into the vacuum deposition apparatus by passing the load lock chamber through the load lock chamber without directly entering the deposition apparatus.
Therefore, when the
The present invention has been devised to solve the problems of the conventional thin film type solar cell,
The present invention simplifies the construction of the manufacturing equipment by performing all necessary deposition processes and then performing the scribing process so that the substrate is not repeatedly injected into the vacuum deposition equipment and the laser scribing equipment alternately, And a method of manufacturing the same.
In order to achieve the above-described object, the present invention provides a method of manufacturing a semiconductor device, comprising: a step of sequentially laminating a front electrode layer, a photoelectric conversion portion and a rear electrode layer on a substrate; Removing a predetermined region of the front electrode layer, the photoelectric conversion portion, and the rear electrode layer to form a first separator; Removing a predetermined region of the photoelectric conversion portion and the rear electrode layer to form a contact portion; Removing a predetermined region of the rear electrode layer to form a second separator; And forming a metal layer for electrically connecting the front electrode layer and the rear electrode layer through the contact portion. [7] The method of manufacturing a thin-film solar cell according to claim 7,
The photoelectric conversion portion may be formed of a semiconductor layer having a PIN structure.
The photoelectric conversion unit may include a first semiconductor layer having a PIN structure, a buffer layer formed on the first semiconductor layer, and a second semiconductor layer having a PIN structure formed on the buffer layer, wherein the first semiconductor layer is amorphous The buffer layer may be formed of a transparent conductive material, and the second semiconductor layer may be formed of a microcrystalline semiconductor material.
And a step of forming an insulating layer in the first separator before the step of forming the metal layer.
The method may further include forming a second insulating layer on both sides of the contact portion before the step of forming the metal layer when the photoelectric conversion portion is formed of the first semiconductor layer, the buffer layer, and the second semiconductor layer At this time, the second insulating layer may be formed between the metal layer and the buffer layer.
The metal layer may be formed to connect the rear electrode layers spaced apart by the first separator.
The contact portion may be formed in a region between the first separating portion and the second separating portion.
The method may further include forming a transparent conductive layer between the photoelectric conversion portion and the rear electrode layer and removing a predetermined region of the transparent conductive layer when forming the first separation portion, the contact portion, and the second separation portion.
The present invention also provides a plasma display panel comprising: a front electrode formed on a substrate by a first separator; A photoelectric conversion unit formed on the front electrode and having a contact portion; A rear electrode formed on the photoelectric conversion unit and spaced apart by a second separator and having the contact portion; And a metal layer electrically connecting the front electrode and the rear electrode through the contact portion.
The photoelectric conversion portion may be formed of a semiconductor layer having a PIN structure.
The photoelectric conversion unit may include a first semiconductor layer having a PIN structure, a buffer layer formed on the first semiconductor layer, and a second semiconductor layer having a PIN structure formed on the buffer layer, wherein the first semiconductor layer is made of amorphous semiconductor The buffer layer is made of a transparent conductive material, and the second semiconductor layer is made of a microcrystalline semiconductor material.
The photoelectric conversion unit and the rear electrode are formed with the first separator. At this time, an insulating layer is formed in the first separator, and the metal layer is connected to the rear electrodes spaced apart by the first separator. have.
In the case where the photoelectric conversion portion includes the first semiconductor layer, the buffer layer, and the second semiconductor layer, a second insulating layer may be formed on both sides of the contact portion, And may be formed between the buffer layers.
The contact portion may be formed in a region between the first separator and the second separator.
A transparent conductive layer having the same pattern as that of the rear electrode may be additionally formed between the photoelectric conversion portion and the rear electrode.
According to the present invention, since the front electrode layer, the photoelectric conversion portion, and the rear electrode layer are sequentially stacked on the substrate, and then the first separation portion, the contact portion, and the second separation portion are formed on the substrate, Since there is no need to repeatedly use laser scribing equipment, the manufacturing equipment configuration is simplified, manufacturing process time is shortened, and productivity is improved.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.
<Thin Film Solar Cell Manufacturing Method>
2A to 2D are cross-sectional views illustrating a manufacturing process of a thin film solar cell according to an embodiment of the present invention.
2A, a
As the
The front electrode layer (200a) is ZnO, ZnO: B, ZnO: Al, SnO 2, SnO 2: F, ITO (Indium Tin Oxide), sputtering a transparent conductive material (Sputtering) method or the MOCVD (Metal Organic such as Chemical Vapor Deposition) method or the like.
Since the
The
The transparent
The
2B, the
The
The
The
The
Next, as shown in FIG. 2C, a first insulating
The first insulating
In order to prevent the
2D, a
The
Meanwhile, although the
FIGS. 3A to 3D are cross-sectional views illustrating a manufacturing process of a thin film solar cell according to another embodiment of the present invention, which relates to a manufacturing process of a thin film solar cell having a tandem structure. FIG. The same reference numerals are assigned to the same components as those of the above-described embodiment, and a detailed description of the same components will be omitted.
3A, a
The step of laminating the
The
Since the amorphous semiconductor material absorbs light having a short wavelength and the microcrystalline semiconductor material absorbs light having a long wavelength, the amorphous semiconductor material and the microcrystalline semiconductor material are combined to form the
The
3B, the
3C, a first insulating
The first insulating
The second
Accordingly, the second insulating
3D, a
<Thin-film solar cell>
4 is a schematic cross-sectional view of a thin film solar cell according to an embodiment of the present invention.
4, a thin film solar cell according to an embodiment of the present invention includes a
The
The
The transparent
The
The first insulating
The
5 is a cross-sectional view of a thin film solar cell according to another embodiment of the present invention, which relates to a thin film solar cell having a tandem structure. The same reference numerals are assigned to the same components as those of the above-described embodiment, and a detailed description of the same components will be omitted.
5, a thin film solar cell according to another embodiment of the present invention includes a
The
The second
4 and 5 can be manufactured by the method according to each of FIGS. 2A to 2D and FIGS. 3A to 3D described above, but the present invention is not limited thereto.
1A to 1F are cross-sectional views illustrating a manufacturing process of a conventional thin film solar cell.
2A to 2D are cross-sectional views illustrating a manufacturing process of a thin film solar cell according to an embodiment of the present invention.
3A to 3D are cross-sectional views illustrating a manufacturing process of a thin film solar cell according to another embodiment of the present invention.
4 is a cross-sectional view of a thin film solar cell according to an embodiment of the present invention.
5 is a cross-sectional view of a thin film solar cell according to an embodiment of the present invention.
DESCRIPTION OF THE REFERENCE NUMERALS OF THE DRAWINGS FIG.
100: substrate 200: front electrode
250: first separator 300: photoelectric converter
310: first semiconductor layer 320: buffer layer
330: second semiconductor layer 350:
400: transparent front layer 500: rear electrode
550: second separator 600: first insulating layer
650: second insulating layer 700: metal layer
Claims (21)
Applications Claiming Priority (2)
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KR20080051659 | 2008-06-02 |
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KR101457573B1 true KR101457573B1 (en) | 2014-11-03 |
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KR101039148B1 (en) * | 2010-03-31 | 2011-06-07 | 주식회사 티지솔라 | Solar cell and method for fabricating the same |
KR101172186B1 (en) * | 2010-10-05 | 2012-08-07 | 엘지이노텍 주식회사 | Solar cell apparatus and method of fabricating the same |
KR101283072B1 (en) | 2011-10-18 | 2013-07-05 | 엘지이노텍 주식회사 | Solar cell apparatus and method of fabricating the same |
KR101393743B1 (en) * | 2012-06-28 | 2014-05-13 | 엘지이노텍 주식회사 | Solar cell and method of fabricating the same |
KR101393859B1 (en) * | 2012-06-28 | 2014-05-13 | 엘지이노텍 주식회사 | Solar cell and method of fabricating the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5131954A (en) * | 1990-10-15 | 1992-07-21 | United Solar Systems Corporation | Monolithic solar cell array and method for its manufacturing |
CN1825654A (en) * | 2005-01-14 | 2006-08-30 | 株式会社半导体能源研究所 | Solar cell and semiconductor device, and manufacturing method thereof |
KR100833675B1 (en) * | 2007-01-30 | 2008-05-29 | (주)실리콘화일 | Semitransparent crystalline thin film solar cell |
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2008
- 2008-07-10 KR KR1020080066931A patent/KR101457573B1/en active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5131954A (en) * | 1990-10-15 | 1992-07-21 | United Solar Systems Corporation | Monolithic solar cell array and method for its manufacturing |
CN1825654A (en) * | 2005-01-14 | 2006-08-30 | 株式会社半导体能源研究所 | Solar cell and semiconductor device, and manufacturing method thereof |
KR100833675B1 (en) * | 2007-01-30 | 2008-05-29 | (주)실리콘화일 | Semitransparent crystalline thin film solar cell |
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