KR20090125675A - Thin film type solar cell, and method for manufacturing the same - Google Patents

Abstract

PURPOSE: A thin film type solar battery and a manufacturing method thereof are provided to prevent a vacuum deposition equipment and a laser scribing equipment from being used in turn, by forming a first separation part, a contact part and a second separation part after stacking a front electrode layer, a photoelectric conversion part and a back electrode layer on a substrate. CONSTITUTION: A front electrode layer(200), a photoelectric conversion part(300) and a back electrode layer(500) are stacked on a substrate(100) in sequence. A first separation part(250) is formed by removing a fixed region of the front electrode layer, the photoelectric conversion part and the back electrode layer. A contact part(350) is formed by removing a fixed region of the photoelectric conversion part and the back electrode layer. A second separation part(500) is formed by removing a fixed region of the back electrode layer. A metal layer(700) connecting the front electrode layer and the back electrode layer electrically is formed through the contact part. The photoelectric conversion part is formed with a PIN type semiconductor layer.

Description

Thin film type solar cell and its manufacturing method {Thin film type Solar Cell, and Method for manufacturing the same}

The present invention relates to a thin film solar cell, and more particularly, to a thin film solar cell having a structure in which a plurality of unit cells are connected in series.

Solar cells are devices that convert light energy into electrical energy using the properties of semiconductors.

The structure and principle of the solar cell will be briefly described. The solar cell has a PN junction structure in which a P (positive) type semiconductor and a N (negative) type semiconductor are bonded to each other. Holes and electrons are generated in the semiconductor by the energy of the incident solar light. At this time, the holes (+) are moved toward the P-type semiconductor by the electric field generated in the PN junction. Negative (-) is the principle that the electric potential is generated by moving toward the N-type semiconductor to generate power.

Such solar cells may be classified into a substrate type solar cell and a thin film type solar cell.

The substrate type solar cell is a solar cell manufactured using a semiconductor material such as silicon as a substrate, and the thin film type solar cell is a solar cell manufactured by forming a semiconductor in the form of a thin film on a substrate such as glass.

Although the substrate type solar cell is somewhat superior in efficiency to the thin film type solar cell, there is a limitation in minimizing the thickness in the process and the manufacturing cost is increased because an expensive semiconductor substrate is used.

Although the thin film type solar cell has a somewhat lower efficiency than the substrate type solar cell, the thin film solar cell is suitable for mass production because the thin film solar cell can be manufactured in a thin thickness and a low cost material can be used to reduce the manufacturing cost.

The thin film solar cell is manufactured by forming a front electrode on a substrate such as glass, a semiconductor layer on the front electrode, and a back electrode on the semiconductor layer. Here, since the front electrode forms a light receiving surface on which light is incident, a transparent conductive material such as ZnO is used as the front electrode. As the substrate becomes larger, the power loss is large due to the resistance of the transparent conductive material. Will occur.

Accordingly, a method of minimizing power loss due to the resistance of the transparent conductive material has been devised by dividing the thin film type solar cell into a plurality of unit cells and connecting the plurality of unit cells in series.

Hereinafter, a method of manufacturing a thin film solar cell having a structure in which a plurality of unit cells are connected in series will be described with reference to the drawings.

1A to 1G are cross-sectional views illustrating a manufacturing process of a thin film solar cell having a structure in which a plurality of conventional unit cells are connected in series.

First, as shown in FIG. 1A, the front electrode layer 20a is formed on the substrate 10 using a transparent conductive material such as ZnO.

Next, as shown in FIG. 1B, the first separator 25 is formed by removing a predetermined region of the front electrode layer 20a. Then, a plurality of front electrodes 20 spaced apart by the first separator 21 are formed.

Next, as shown in FIG. 1C, the semiconductor layer 30a is formed on the entire surface of the substrate 10 including the front electrode 20.

Next, as shown in FIG. 1D, the contact region 35 is formed by removing a predetermined region of the semiconductor layer 30a.

Next, as shown in FIG. 1E, a back electrode layer 50a is formed on the entire surface of the substrate 10.

Next, as shown in FIG. 1F, predetermined regions of the back electrode layer 50a and the semiconductor layer 30 are removed to form a second separator 55. Then, a plurality of rear electrodes 50 spaced apart by the second separation unit 55 and connected to the front electrode 20 through the contact unit 35 are formed. As such, the front electrode 20 and the rear electrode 50 are connected to each other through the contact part 35 to have a structure in which a plurality of unit cells are connected in series.

However, the conventional method of manufacturing a thin film solar cell has the following problems.

Briefly summarizing the conventional manufacturing method, the conventional manufacturing method is a step of forming the front electrode layer 20a (see FIG. 1A), a step of forming the first separation unit 25 (see FIG. 1B), and the semiconductor layer 30a. ) (See FIG. 1C), the process of forming the contact portion 35 (see FIG. 1D), the process of forming the back electrode layer 50a (see FIG. 1E), and the second separator 55. Forming step (see FIG. 1F).

In this case, the process of forming the front electrode layer 20a (see FIG. 1A), the process of forming the semiconductor layer 30a (see FIG. 1C), and the process of forming the back electrode layer 50a (see FIG. 1E) are generally performed. While using the vacuum deposition equipment, the process of forming the first separation unit 25 (see FIG. 1B), the process of forming the contact unit 35 (see FIG. 1D), and the second separation unit The process of forming 55 (see FIG. 1F) is performed using a laser scribing apparatus under atmospheric pressure.

Therefore, in the conventional case, in order to complete a thin-film solar cell, the substrate 10 should be repeatedly inputted to the vacuum deposition equipment and the laser scribing equipment alternately, which results in complicated manufacturing equipment and a long manufacturing process time. There is a falling problem.

More specifically, this problem is required in the process of introducing the substrate into the vacuum deposition equipment under atmospheric pressure requires a method for blocking the outside air flow into the vacuum deposition equipment, generally the substrate vacuum The substrate is introduced into the vacuum deposition apparatus by preventing the outside air from flowing into the vacuum deposition apparatus by passing the load rock chamber without directly entering the deposition apparatus.

Therefore, if the substrate 10 is repeatedly input to the vacuum deposition equipment and the laser scribing equipment alternately as in the prior art, the composition of the equipment is complicated due to the load lock chamber and the like, and manufactured by the load lock chamber. There is a problem that the process takes a long time.

The present invention is designed to solve the problems of the conventional thin-film solar cell described above,

According to the present invention, by performing all the necessary deposition processes and then performing a scribing process, the configuration of the manufacturing equipment is simplified by not repeatedly injecting the substrate into the vacuum deposition equipment and the laser scribing equipment. An object of the present invention is to provide a thin film solar cell and a method of manufacturing the same.

The present invention, in order to achieve the above object, a step of sequentially stacking a front electrode layer, a photoelectric conversion unit and a back electrode layer on a substrate; Forming a first separator by removing predetermined regions of the front electrode layer, the photoelectric conversion part, and the back electrode layer; Forming a contact part by removing predetermined regions of the photoelectric conversion part and the back electrode layer; Removing a predetermined region of the back electrode layer to form a second separator; And forming a metal layer electrically connecting the front electrode layer and the back electrode layer through the contact portion.

The photoelectric conversion unit may be formed of a semiconductor layer having a PIN structure.

The photoelectric conversion unit may be formed of a first semiconductor layer having a PIN structure, a buffer layer formed on the first semiconductor layer, and a second semiconductor layer having a PIN structure formed on the buffer layer, wherein the first semiconductor layer is amorphous. The semiconductor layer may be formed of a semiconductor material, the buffer layer may be formed of a transparent conductive material, and the second semiconductor layer may be formed of a microcrystalline semiconductor material.

The method may further include forming an insulating layer on the first separation unit before forming the metal layer.

In the case of forming the photoelectric change part as the first semiconductor layer, the buffer layer, and the second semiconductor layer, the method may further include forming a second insulating layer on both sides of the contact portion before forming the metal layer. In this case, the second insulating layer may be formed between the metal layer and the buffer layer.

The metal layer may be formed to connect between the rear electrode layers spaced by the first separator.

The contact portion may be formed in a region between the first separator and the second separator.

The method may further include forming a transparent conductive layer between the photoelectric conversion unit and the back electrode layer, and may also remove a predetermined region of the transparent conductive layer when the first separation unit, the contact unit, and the second separation unit are formed.

The present invention also includes a front electrode spaced apart from the first separation portion on the substrate; A photoelectric conversion part formed on the front electrode with a contact part; A back electrode formed on the photoelectric conversion part, spaced apart by a second separation part, and including the contact part; And a metal layer electrically connecting the front electrode and the rear electrode through the contact part.

The photoelectric conversion unit may be formed of a semiconductor layer having a PIN structure.

The photoelectric conversion unit may include a first semiconductor layer having a PIN structure, a buffer layer formed on the first semiconductor layer, and a second semiconductor layer having a PIN structure formed on the buffer layer, wherein the first semiconductor layer is an amorphous semiconductor. It may be made of a material, the buffer layer may be made of a transparent conductive material, and the second semiconductor layer may be made of a microcrystalline semiconductor material.

The photoelectric conversion unit and the back electrode are formed to include the first separation unit, wherein an insulating layer is formed on the first separation unit, and the metal layer can be connected between the rear electrodes spaced apart by the first separation unit. have.

When the photoelectric change part is formed of a first semiconductor layer, a buffer layer, and a second semiconductor layer, second insulating layers may be formed on both side surfaces of the contact part, wherein the second insulating layer is formed of the metal layer and the second insulating layer. It may be formed between the buffer layer.

The contact portion may be formed in a region between the first separator and the second separator.

A transparent conductive layer having the same pattern as that of the back electrode may be further formed between the photoelectric converter and the back electrode.

According to the present invention as described above, since the front electrode layer, the photoelectric conversion unit and the rear electrode layer are sequentially stacked on the substrate, and then the first separation unit, the contact unit and the second separation unit are formed, the vacuum deposition apparatus and the conventional There is no need to alternately use laser scribing equipment, which simplifies manufacturing equipment construction and shortens the manufacturing process time, thus improving productivity.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

<Thin Film Solar Cell Manufacturing Method>

2A to 2D are cross-sectional views illustrating a manufacturing process of a thin film solar cell according to an embodiment of the present invention.

First, as shown in FIG. 2A, the front electrode layer 200a, the photoelectric converter 300a, the transparent conductive layer 400a, and the back electrode layer 500a are sequentially stacked on the substrate 100.

Glass or transparent plastic may be used as the substrate 100.

The front electrode layer 200a may be formed by sputtering or MOCVD (Metal Organic Chemical Vapor) of a transparent conductive material such as ZnO, ZnO: B, ZnO: Al, SnO ₂ , SnO ₂ : F, Indium Tin Oxide (ITO), or the like. Lamination can be carried out using a deposition method or the like.

Since the front electrode layer 200a is a surface on which the solar light is incident, it is important to allow the incident solar light to be absorbed to the inside of the solar cell as much as possible. It can be done further. The texture processing process is a process of forming a surface of a material with an uneven structure and processing it into a shape like a surface of a fabric. An etching process using a photolithography method and an anisotropic etching process using a chemical solution are performed. Or through a groove forming process using mechanical scribing. When such a texture processing process is performed on the front electrode layer 200a, the ratio of incident solar light to the outside of the solar cell is reduced, and sunlight is emitted into the solar cell by scattering of incident solar light. The rate of absorption is increased, thereby increasing the efficiency of the solar cell.

The photoelectric conversion unit 300a may deposit a silicon-based semiconductor material using a plasma CVD method, or the like, and may have a PIN structure in which a P-type semiconductor layer, an I-type semiconductor layer, and an N-type semiconductor layer are sequentially stacked. . When the photoelectric conversion unit 300a is formed in the PIN structure as described above, the I-type semiconductor layer is depleted by the P-type semiconductor layer and the N-type semiconductor layer, and an electric field is generated therein. The holes and electrons generated by the drift are drift by the electric field and are collected in the P-type semiconductor layer and the N-type semiconductor layer, respectively. On the other hand, in the case where the photoelectric conversion unit 300a has a PIN structure, it is preferable to first form a P-type semiconductor layer, and then form an I-type semiconductor layer and an N-type semiconductor layer in order. As the drift mobility of the holes is low due to the drift mobility of the electrons, the P-type semiconductor layer is formed to be close to the light receiving surface in order to maximize the collection efficiency due to incident light.

The transparent conductive layer 400a may be laminated by using a transparent conductive material such as ZnO, ZnO: B, ZnO: Al, or Ag using a sputtering method or a metal organic chemical vapor deposition (MOCVD) method. The transparent conductive layer 400a may be omitted, but it is preferable to form the transparent conductive layer 400a in order to increase efficiency of the solar cell. That is, when the transparent conductive layer 400a is formed, sunlight passing through the photoelectric conversion unit 300a passes through the transparent conductive layer 400a and progresses through various angles through scattering, thereby reflecting off the back electrode layer 500a. This is because the ratio of light that is reincident to the photoelectric conversion unit 300a may increase.

The back electrode layer 500a may be formed by sputtering or the like, such as Ag, Al, Ag + Mo, Ag + Ni, Ag + Cu, or the like, and may be laminated using screen printing. You may.

Next, as shown in FIG. 2B, the first separator 250, the contact unit 350, and the second separator 550 are formed to form the front electrode 200, the photoelectric converter 300, and the transparent conductive layer. 400, and the rear electrode 500 is completed.

The first separator 250 serves to separate the thin film solar cell into unit cells by separating the front electrode 200 at predetermined intervals, and the first separator 250 is the front electrode layer 200a. The photoelectric converter 300a, the transparent conductive layer 400a, and the back electrode layer 500a may be formed by removing predetermined regions.

The contact unit 350 serves as a connection path for electrically connecting the front electrode 200 and the rear electrode 500 to connect unit cells of a thin film solar cell in series. 350 is formed by removing predetermined regions of the photoelectric conversion part 300a, the transparent conductive layer 400a, and the back electrode layer 500a. In addition, the contact portion 350 is formed in a region between the first separator 250 and the second separator 550.

The second separator 550 separates the thin film solar cell into unit cells by separating the rear electrode 500 at predetermined intervals, and the second separator 550 is the transparent conductive layer 400a. And removing a predetermined region of the back electrode layer 500a.

The first separator 250, the contact unit 350, and the second separator 550 may be formed using a laser scribing process, and a special process sequence is not required. That is, one of the first separator 250, the contact unit 350, and the second separator 550 may be formed first, and then the remaining two may be sequentially formed. In the case of forming two or more of the first separation unit 250, the contact portion 350 and the second separation unit 550 at the same time or three can be formed at the same time through the structural change, it is advantageous to shorten the process time do.

Next, as shown in FIG. 2C, a first insulating layer 600 is formed in the first separator 250.

The first insulating layer 600 is formed to prevent the front electrodes 200 separated into unit cells from being electrically connected to each other in a process to be described later. Specifically, in the process of FIG. 2D to be described later, the metal layer 700 is formed to electrically connect the front electrode 200 and the rear electrode 500 through the contact portion 350. In this case, the metal layer 700 ) Penetrates into the first separator 250, the front electrodes 200 separated into unit cells are electrically connected by the metal layer 700, and a short is generated.

Therefore, in order to prevent the front electrodes 200 separated into unit cells from being electrically connected by the metal layer 700, the first insulating layer 600 is formed in the first separation unit 250 before the metal layer 700 is formed. It is. On the other hand, since the first insulating layer 600 is to prevent the front electrodes 200 separated into unit cells from being electrically connected to each other, the first insulating layer 600 must be formed in the entire interior of the first separator 250. It is not necessary to form the 600, and the first insulating layer 600 may be formed inside the first separator 250 at the same height or higher than the front electrode 200.

Next, as can be seen in Figure 2d, through the contact portion 350 to form a metal layer 700 for electrically connecting the front electrode 200 and the rear electrode 500.

The metal layer 700 connects the unit cells of the thin film solar cell in series by electrically connecting the front electrode 200 and the rear electrode 500.

Meanwhile, the first separator 250 separates the front electrode 200 into unit cells, but in the process, the back electrode 500 is also separated and spaced apart by the first separator 250. By connecting the rear electrode 500 spaced apart by the first separator 250 through the metal layer 700, the entire rear electrode 500 may be electrically connected in one unit cell.

3A to 3D are cross-sectional views illustrating a manufacturing process of a thin film solar cell according to another embodiment of the present invention, which relates to a manufacturing process of a tandem thin film solar cell. The same reference numerals are given to the same elements as in the above-described embodiment, and detailed descriptions of the same elements will be omitted.

First, as shown in FIG. 3A, the front electrode layer 200a, the photoelectric conversion unit 300a, the transparent conductive layer 400a, and the back electrode layer 500a are sequentially stacked on the substrate 100.

The process of stacking the photoelectric conversion unit 300a may include stacking a first semiconductor layer 310a, stacking a buffer layer 320a on the first semiconductor layer 310a, and forming a first semiconductor layer 310a on the buffer layer 320a. It consists of the process of laminating | stacking the 2 semiconductor layer 330a.

The first semiconductor layer 310a may be made of an amorphous semiconductor material having a PIN structure, and the second semiconductor layer 330a may be made of a microcrystalline semiconductor material.

Since the amorphous semiconductor material absorbs light of short wavelength well and the microcrystalline semiconductor material absorbs light of long wavelength well, the photoelectric conversion unit 300a is formed by combining the amorphous semiconductor material and the microcrystalline semiconductor material. Light absorption efficiency can be improved. In addition, the amorphous semiconductor material has a problem that the degradation phenomenon is accelerated when exposed to light for a long time, when the amorphous semiconductor material is formed on the side where the sunlight is incident and the microcrystalline semiconductor material is formed on the opposite side of the solar cell deterioration There is an effect to reduce. Therefore, the first semiconductor layer 310a close to the surface where the sunlight is incident may be formed of an amorphous semiconductor material, and the second semiconductor layer 330a far from the surface where the sunlight is incident may be formed of the microcrystalline semiconductor material. . However, the present invention is not limited thereto, and the second semiconductor layer 330a may be modified in various ways, such as an amorphous semiconductor material and an amorphous silicon / germanium material.

The buffer layer 320a is formed between the first semiconductor layer 310a and the second semiconductor layer 330a to form holes through the tunnel junction between the first semiconductor layer 310a and the second semiconductor layer 330a. And it serves to facilitate the movement of the electron. That is, in order for the electrons generated in the first semiconductor layer 310a to move to the second semiconductor layer 330a, a tunneling process must be performed between the first semiconductor layer 310a and the second semiconductor layer 330a. To this end, the buffer layer 320a is formed. The buffer layer 320a is formed using a transparent conductive material such as ZnO.

Next, as shown in FIG. 3B, the first separator 250, the contact unit 350, and the second separator 550 are formed to form the front electrode 200, the photoelectric converter 300, and the transparent conductive layer. 400, and the rear electrode 500 is completed.

Next, as shown in FIG. 3C, the first insulating layer 600 is formed on the first separator 250, and the second insulating layer 650 is formed on both sides of the contact portion 350.

The first insulating layer 600 is formed to prevent the front electrodes 200 separated into unit cells from being electrically connected to each other by the metal layer 700 in FIG. 3D. .

The second insulating layer 650 serves to block the short circuit by electrically connecting the metal layer 700 and the buffer layer 320 in FIG. 3D. That is, when the metal layer 700 electrically connects the front electrode 200 and the neighboring rear electrode 500 in FIG. 4D, the metal layer 700 is made of a transparent conductive material in the photoelectric conversion unit 300. Since a short is generated when it comes in contact with the buffer layer 320, the second insulating layer 650 is formed to prevent the metal layer 700 and the buffer layer 320 from contacting each other.

Accordingly, the second insulating layer 650 is formed to contact the buffer layer 320 in both sides of the contact portion 350, that is, in the contact portion 350, and as a result, the second insulating layer 650 may be formed after the process of FIG. 3D. The second insulating layer 650 is formed between the metal layer 700 and the buffer layer 320.

Next, as can be seen in Figure 3d, through the contact portion 350 to form a metal layer 700 for electrically connecting the front electrode 200 and the rear electrode 500.

<Thin Film Solar Cell>

4 is a schematic cross-sectional view of a thin film solar cell according to an embodiment of the present invention.

As can be seen in Figure 4, the thin-film solar cell according to an embodiment of the present invention, the substrate 100, the front electrode 200, the photoelectric conversion unit 300, the transparent conductive layer 400, the rear electrode 500, 1, the insulating layer 600 and the metal layer 700 are included.

The front electrode 200 is formed on the substrate 100 and is spaced apart by the first separator 250. The front electrode 200 may be made of a transparent conductive material such as ZnO, ZnO: B, ZnO: Al, SnO ₂ , SnO ₂ : F, ITO (Indium Tin Oxide), and the like to improve the absorption rate of sunlight. It may be formed in this uneven structure.

The photoelectric conversion part 300 is formed on the front electrode 200 and includes a first separation part 250 and a contact part 350. The photoelectric conversion unit 300 may be formed of a silicon-based semiconductor material having a PIN structure in which a P-type semiconductor layer, an I-type semiconductor layer, and an N-type semiconductor layer are sequentially stacked.

The transparent conductive layer 400 is formed on the photoelectric converter 300 and is formed in the same pattern as the back electrode 500. The transparent conductive layer 400 may be made of a transparent conductive material such as ZnO, ZnO: B, ZnO: Al, Ag, or may be omitted in some cases.

The back electrode 500 is formed on the transparent conductive layer 400, and is spaced apart by the second separator 550. One back electrode 500 constituting one unit cell may be spaced apart by the first separator 250 and the contact unit 350, but may have an electrically connected structure by the metal layer 700. The back electrode 500 may be made of metal such as Ag, Al, Ag + Mo, Ag + Ni, Ag + Cu, or the like.

The first insulating layer 600 is formed in the first separator 250 to prevent the front electrodes 200 spaced apart from each other. The first insulating layer 600 does not necessarily need to be formed in the entire interior of the first separator 250, but is formed at the same height as or greater than the front electrode 200 in the first separator 250. That's it.

The metal layer 700 electrically connects the front electrode 200 and the rear electrode 500 through the contact portion 350. In addition, the metal layer 700 may be electrically connected to the entire rear electrode 500 in one unit cell by connecting the rear electrode 500 spaced apart by the first separator 250.

5 is a cross-sectional view of a thin film solar cell according to another embodiment of the present invention, which relates to a thin film solar cell having a tandem structure. The same reference numerals are given to the same elements as in the above-described embodiment, and detailed descriptions of the same elements will be omitted.

As can be seen in Figure 5, the thin-film solar cell according to another embodiment of the present invention, the substrate 100, the front electrode 200, the photoelectric conversion unit 300, the transparent conductive layer 400, the rear electrode 500, The first insulating layer 600, the second insulating layer 650, and the metal layer 700 may be formed.

The photoelectric conversion unit 300 includes a first semiconductor layer 310, a buffer layer 320 formed on the first semiconductor layer 310, and a second semiconductor layer 330 formed on the buffer layer 320. . The first semiconductor layer 310 is made of an amorphous semiconductor material having a PIN structure, the buffer layer 320 is made of a transparent conductive material such as ZnO, and the second semiconductor layer 330 is made of a microcrystalline semiconductor material. Can be. However, the present invention is not limited thereto, and the second semiconductor layer 330 may be variously modified and used, such as an amorphous semiconductor material and an amorphous silicon / germanium material.

The second insulating layer 350 is formed on both sides of the contact portion 350, specifically, between the metal layer 700 and the buffer layer 320, and short between the metal layer 700 and the buffer layer 320. To prevent it from happening.

The thin film solar cell according to FIGS. 4 and 5 may be manufactured by the method of FIGS. 2A to 2D and 3A to 3D, respectively, but is not necessarily limited thereto.

1A to 1F are cross-sectional views illustrating a manufacturing process of a conventional thin film solar cell.

2A to 2D are cross-sectional views illustrating a manufacturing process of a thin film solar cell according to an embodiment of the present invention.

3A to 3D are cross-sectional views illustrating a manufacturing process of a thin film solar cell according to another embodiment of the present invention.

4 is a cross-sectional view of a thin film solar cell according to an embodiment of the present invention.

5 is a cross-sectional view of a thin film solar cell according to an embodiment of the present invention.

<Description of Signs of Major Parts of Drawing>

100: substrate 200: front electrode

250: first separation unit 300: photoelectric conversion unit

310: first semiconductor layer 320: buffer layer

330: second semiconductor layer 350: contact portion

400: transparent conductive layer 500: rear electrode

550: second separator 600: first insulating layer

650: second insulating layer 700: metal layer

Claims (21)

Sequentially stacking a front electrode layer, a photoelectric conversion unit, and a back electrode layer on a substrate; Forming a first separator by removing predetermined regions of the front electrode layer, the photoelectric conversion part, and the back electrode layer; Forming a contact part by removing predetermined regions of the photoelectric conversion part and the back electrode layer; Removing a predetermined region of the back electrode layer to form a second separator; And And forming a metal layer electrically connecting the front electrode layer and the back electrode layer through the contact portion. The method of claim 1, The photoelectric conversion unit manufacturing method of a thin film type solar cell, characterized in that formed by the semiconductor layer of the PIN structure. The method of claim 1, And the photoelectric conversion unit is formed of a first semiconductor layer having a PIN structure, a buffer layer formed on the first semiconductor layer, and a second semiconductor layer having a PIN structure formed on the buffer layer. The method of claim 3, And the first semiconductor layer is formed of an amorphous semiconductor material, the buffer layer is formed of a transparent conductive material, and the second semiconductor layer is formed of a microcrystalline semiconductor material. The method of claim 1, And forming a first insulating layer in the first separation part before the forming of the metal layer. The method according to claim 3 or 4, And forming a second insulating layer on both sides of the contact portion before the forming of the metal layer. The method of claim 6, And the second insulating layer is formed between the metal layer and the buffer layer. The method of claim 1, The metal layer is a thin film solar cell manufacturing method characterized in that formed to connect between the rear electrode layer spaced apart by the first separator. The method of claim 1, And the contact portion is formed in a region between the first separator and the second separator. The method of claim 1, The method may further include forming a transparent conductive layer between the photoelectric conversion unit and the back electrode layer, and removing a predetermined region of the transparent conductive layer when the first separation unit, the contact unit, and the second separation unit are formed. Method of manufacturing thin film solar cell. A front electrode spaced apart from the substrate by a first separator; A photoelectric conversion part formed on the front electrode with a contact part; A back electrode formed on the photoelectric conversion part, spaced apart by a second separation part, and including the contact part; And Thin film solar cell comprising a metal layer electrically connecting the front electrode and the rear electrode through the contact portion. The method of claim 11, The photoelectric conversion unit is a thin film solar cell, characterized in that consisting of a semiconductor layer of the PIN structure. The method of claim 11, The photoelectric conversion unit is a thin film solar cell, characterized in that the first semiconductor layer of the PIN structure, the buffer layer formed on the first semiconductor layer, and the second semiconductor layer of the PIN structure formed on the buffer layer. The method of claim 13, The thin film solar cell of claim 1, wherein the first semiconductor layer is made of an amorphous semiconductor material, the buffer layer is made of a transparent conductive material, and the second semiconductor layer is made of a microcrystalline semiconductor material. The method of claim 11, The photoelectric conversion unit and the rear electrode is a thin film type solar cell, characterized in that formed with the first separator. The method of claim 15, The thin film solar cell of claim 1, wherein a first insulating layer is formed in the first separator. The method according to claim 13 or 14, The thin film solar cell of claim 2, wherein second contact layers are formed on both side surfaces of the contact portion. The method of claim 17, The second insulating layer is a thin film type solar cell, characterized in that formed between the metal layer and the buffer layer. The method of claim 15, The metal layer is a thin-film solar cell, characterized in that for connecting between the rear electrode spaced apart by the first separator. The method of claim 11, The contact portion is a thin-film solar cell, characterized in that formed in the region between the first separation portion and the second separation portion. The method of claim 11, Thin film type solar cell, characterized in that the transparent conductive layer of the same pattern as the rear electrode is further formed between the photoelectric conversion unit and the rear electrode.

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