CN105280748B - Double-color detector - Google Patents
Double-color detector Download PDFInfo
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- CN105280748B CN105280748B CN201410328394.3A CN201410328394A CN105280748B CN 105280748 B CN105280748 B CN 105280748B CN 201410328394 A CN201410328394 A CN 201410328394A CN 105280748 B CN105280748 B CN 105280748B
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Abstract
The invention discloses a kind of double-color detector, it is characterised in that the double-color detector uses Top-down design structure, include substrate, Al-Ga-N material layer, metal interdigital electrode, insulating medium layer, grapheme material layer and metal electrode successively from bottom to top.Two kinds of sensitive detection parts of wave band reduce device size with integrated morphology from bottom to top in the detector, reduce the complexity of preparation technology and detection system.
Description
Technical field
There is height the present invention relates to the detector technology field that can be detected to multi-wave signal, more particularly to one kind
The ultraviolet-infrared two-colour detector of responsiveness.
Background technology
Infrared Detectors and ultraviolet detector are two kinds of common detectors for being widely used in the aspects such as military and civilian.
Infrared Detectors is adjusted in infrared night vision technology, infrared search and tracking, weather forecast, geomorphology, environmental monitoring, remote sensing resources
Look into, underground coal mine thermometric and concealed fire detection in all serve very important effect.Ultraviolet detector except ultraviolet communication,
Outside the application of biochemical analysis military field related to early stage missile warning etc., cutaneous lesions details diagnosis, cancer cell detection, it is micro-
The medical science such as biological detection and white blood cell detection and biology aspect, and naked light detection, ozone monitoring, offshore oil is supervised, public security detects
Examine and the aspect such as astronomical observation also has very important application.However, because the fast-developing, actual of imaging guidance should
Complexity with environment and the continuous improvement to integrated level requirement, the need for monochromatic probe device can not increasingly meet application.Visit
Device technology is surveyed constantly to develop to big array, focal plane, integrated, small size, multicolor direction, it is especially ultraviolet with infrared integrated spy
The big wavelength band integrated detection of polychrome such as survey has become important need of the every country in field of detecting at present.Infrared and purple
Ultraviolet-infrared two-colour detector is combined into both outer, so that it may which complicated background is suppressed, improve the detection effect to target
Really, false alarm rate can be significantly reduced in early warning, search and tracking system, significantly increases the performance of system and in various applications
Versatility on platform.
With gallium nitride (GaN)/III group nitride material system of aluminum gallium nitride (AlGaN) system as representative, with one
Based material can realize ultraviolet-infrared dual band even multiband absorb this advantage, can theoretically realize well it is ultraviolet-
IR dual spectral detection.At present, adapt to ultraviolet detector especially day it is blind it is ultraviolet (<280nm) high alumina (Al) component gallium aluminium of detector
Nitrogen (AlGaN) material comparative maturity, the responsiveness for making the ultraviolet detector developed is very high.But carry out the arrowband of infrared acquisition
Gap structure also there are problems that it is a lot, far from practicality.Two kinds of integrated extensions of structure bring very big tired to Material growth simultaneously
Difficulty, thus urgently need a kind of new mode to realize regulatable ultraviolet-infrared integrated detection.
The content of the invention
For the deficiencies in the prior art mentioned above, in order to realize the integrated spy of the ultraviolet and infrared band of high-responsivity
Survey, responsive detector has high-responsivity to miniaturization, integrated and multifunction design requirement the invention provides one kind
Ultraviolet-infrared two-colour detector, the double-color detector use Top-down design structure, from bottom to top successively include substrate, gallium aluminium
Nitride material layer, metal interdigital electrode, insulating medium layer, grapheme material layer and metal electrode.
Preferably, the cycle T of the metal interdigital electrode and the relation of the peak wavelength of infrared acquisition wave band are λ p=
0.6+ α * T, wherein, α=1~2.
Preferably, the relative dielectric constant of the insulating medium layer is 2~10.
Preferably, the thickness of the insulating medium layer is 500~1000nm.
Preferably, the relative dielectric constant of the insulating medium layer is 2, and thickness is 800nm.
Preferably, the material of the insulating medium layer is silica, silicon nitride or aluminum oxide.
Preferably, the grapheme material layer is the grapheme material layer of monoatomic layer.
Preferably, in the Al-Ga-N material layer, the component of aluminium is 40%~100%.
Preferably, the thickness of the Al-Ga-N material layer is 500~1000nm.
Preferably, a passivation layer is additionally provided with the double-color detector, the material of the passivation layer is silica, nitrogenizes
Silicon or aluminum oxide.
Double-color detector provided in an embodiment of the present invention is entered by setting the Al-Ga-N material layer with metal interdigital electrode
Row ultraviolet detection, infrared acquisition is carried out by setting the grapheme material that can the carry out working and room temperature layer with metal electrode,
With integrated morphology from bottom to top, device size is reduced, reduce the complexity of preparation technology and detection system；In addition,
By setting the cycle of the metal interdigital electrode in double-color detector and the relative dielectric constant and thickness of regulation insulating medium layer
Degree, can regulate and control selectively coupled and stiffness of coupling of the metallic surface plasma excimer to infrared acquisition wave band, improve Graphene
Responsiveness of the material layer to infrared acquisition.
Brief description of the drawings
Fig. 1 is the main view profile of double-color detector provided in an embodiment of the present invention.
Fig. 2 is the top view of double-color detector provided in an embodiment of the present invention.
Fig. 3 is the stereogram of double-color detector provided in an embodiment of the present invention.
Specific embodiment
In order that the purpose of the present invention, technical scheme and advantage become more apparent, implement below in conjunction with accompanying drawing
The present invention will be further described for example.
The purpose of technical solution of the present invention is to realize the integrated detection of the ultraviolet and infrared band of high-responsivity, complying with
Detector is to miniaturization, integrated and multifunction design requirement, there is provided a kind of ultraviolet-infrared double with high-responsivity
Chromakey detector.
The appearance of grapheme material and successfully it is prepared as the development in each field and is filled with new vitality, or even will causes a lot
The change in field.Absorption of the monoatomic layer Graphene from infrared to the wavelength band of visible ray reaches same up to 2.3%
Absorption efficiency needs the thick Si materials of 15nm or the thick GaAs materials of 20nm.Meanwhile, grapheme material also has photo-generated carrier
Multiplier effect and carrier mobility very high (can exceed 200,000cm at room temperature2/ Vs), thus be great application prospect
High-responsivity, high-frequency response and response spectra infrared electro detection material wide.
Problem encountered is detected for current ultraviolet-infrared bichromatic, based on for a long time to III group-III nitride and Graphene material
The research work of material, the present invention proposes a kind of ultraviolet-infrared two-colour detector with high-responsivity, can effectively reduce material
Material growth difficulty, simplifies device technology preparation process, realizes the integrated detection of ultraviolet-infrared bichromatic of high-responsivity.
Refering to Fig. 1-3, the double-color detector uses Top-down design structure, includes substrate 6, aluminum gallium nitride material successively from bottom to top
The bed of material 5, metal interdigital electrode 4, insulating medium layer 3, grapheme material layer 2 and metal electrode 1；Wherein, the aluminum gallium nitride material
The bed of material 5 is used to carry out ultraviolet detection, and the grapheme material layer 2 is used to carry out infrared acquisition.
Ultraviolet-infrared bichromatic integrated detector as provided above, can realize to ultraviolet and infrared band Gao Xiang simultaneously
Should detect, the ultraviolet detection of different frequency range can be realized using component adjustable aluminum gallium nitride (AlGaN) material, using with Gao Qian
The grapheme material of shifting rate can realize that LONG WAVE INFRARED is detected.Wherein, the room of high-responsivity can be realized using grapheme material
The infrared detector of temperature work, greatly reduces the preparation process of detector and the complexity of refrigeration system.With reference to aluminum gallium nitride
(AlGaN) the high responsiveness energy and wave band adjustability of ultraviolet detector, detector chip chi can be effectively reduced by the two combination
It is very little, simplify optical system, electricity system and the refrigeration system of detector.
Wherein, the material of substrate 6 can select to be sapphire or silicon；Metal interdigital electrode 4 includes two metal layers, for example
Can be made up of nickel and golden two metal layers；The material of insulating medium layer 3 can select to be silica, silicon nitride or aluminum oxide；
Metal electrode 1 includes two electrodes, and respectively positioned at the two ends of grapheme material layer 2, metal electrode 1 includes two metal layers, example
Can be such as made up of titanium and golden two metal layers；In Al-Ga-N material layer 5, the component of aluminium is 40%~100%；Al-Ga-N material
The thickness of layer 5 is 500~more than 1000nm.
In the present embodiment, the cycle T of metal interdigital electrode 4 and the relation of the peak wavelength of infrared acquisition wave band are λ p
=0.6+ α * T, wherein, α=1~2.Have as above with the peak wavelength of outer detecting band when the cycle of metal interdigital electrode 4
During relation, metal interdigital electrode 4 can regulate and control selectively coupled and coupling of the metallic surface plasma excimer to infrared acquisition wave band
Intensity is closed, the grapheme material 2 pairs of responsiveness of infrared acquisition of layer are improved.
In the present embodiment, the relative dielectric constant of insulating medium layer 3 is preferably 2~10；Its thickness is preferably 500~
1000nm.When the relative dielectric constant and thickness of insulating medium layer are selected in the above range, metal surface etc. can be regulated and controled
Ion excimer improves the grapheme material 2 pairs of sound of infrared acquisition of layer to the selectively coupled and stiffness of coupling of infrared acquisition wave band
Response.The numerical value being more highly preferred to is that the relative dielectric constant of insulating medium layer is 2, and thickness is 800nm.
In the present embodiment, grapheme material layer 2 is the grapheme material layer of monoatomic layer.Using the graphite of monoatomic layer
Alkene material can reduce the absorption to ultraviolet radioactive, it is to avoid to the Al-Ga-N material 5 pairs of decay of the responsiveness of ultraviolet detection of layer.
In addition, in the present embodiment, in order to ensure the reliability and stability of device, can also be in the upper of double-color detector
Surface sets a passivation layer (not indicated in accompanying drawing).The material of passivation layer can select to be silica, silicon nitride or aluminum oxide.
The double-color detector simple structure that above technical scheme is provided, its preparation technology difficulty is low.Below being operated in day
As a example by the double-color detector of blind ultraviolet band and middle-infrared band, by introducing its preparation technology (its structure refers to accompanying drawing 1-3)
Those skilled in the art is set to understand the technical scheme of present invention offer in more detail.Preparation technology specifically includes following steps：
Step 1：It is substrate 6 with sapphire, and metal organic chemical vapor deposition is utilized in Sapphire Substrate 6
(MOCVD) technique grows aluminum gallium nitride (AlGaN) material layer 5 of 1 μ m-thick, and the component of aluminium (Al) is 45% wherein in AlGaN material.
It should be noted that UV absorption wave band λUVCan be regulated and controled by adjusting the component x of aluminium (Al), UV absorption wave band λUV
There is following relation with the component x of aluminium：
Step 2：Using ultraviolet photolithographic technique, the mask of metal interdigital electrode 4 is made in aluminum gallium nitride (AlGaN) material layer 5,
The infrared wavelength that the cycle of metal interdigital electrode 4 detects as needed is adjusted.Calculated by relational expression λ p=0.6+ α * T
Go out, wherein, α=1.27 in the present embodiment, T is the cycle of metal interdigital electrode 4, and λ p are the peak value ripple of infrared acquisition wave band
It is long.
Step 3：Using electron beam evaporation process, ni au is deposited in aluminum gallium nitride (AlGaN) material layer 5 with mask
(Ni/Au) alloy includes nickel metal layer and gold metal layer, wherein nickel metal as metal interdigital electrode 4, i.e. metal interdigital electrode 4
The thickness of layer is 50nm, and the thickness of gold metal layer is 300nm.Mask is peeled off, is prepared and is completed metal-semiconductor-metal
Aluminum gallium nitride solar blind ultraviolet detector part.
Step 4：Using plasma enhanced chemical vapor deposition (PECVD) technique, in the aluminium with metal interdigital electrode 4
Certain thickness silica (SiO2) is deposited in gallium nitride material layer 5 as insulating medium layer 3, it is infrared in being directed in the present embodiment
The detecting band of (~4 μm), the relative dielectric constant and thickness of insulating medium layer 3 are respectively chosen as 2 and 800nm.
Step 5：Using chemical vapor deposition (CVD) technique, one layer of graphite of monoatomic layer is deposited on insulating medium layer 3
Alkene material layer 2.
Step 6：Using ultraviolet photolithographic technique, the mask of metal electrode 1 is made on grapheme material layer 2.
Step 7：Using electron beam evaporation process, titanium deposition/gold (Ti/Au) on the grapheme material layer 2 with mask
Alloy includes titanium coating and gold metal layer as metal electrode 1, i.e. metal electrode 1, and the wherein thickness of titanium coating is 20nm,
The thickness of gold metal layer is 300nm.Mask is peeled off, is prepared and is completed Graphene Infrared Detectors part.
Step 8：In order to ensure the reliability and stability of device, using plasma enhanced chemical vapor deposition
(PECVD) technique, ultraviolet photolithographic technique and reactive ion etching (RIE) technique deposited on ultraviolet-infrared two-colour detector and
The thick silicon oxide dielectric layers of 500nm are prepared as passivation layer.
The double-color detector for obtaining made above, when infrared and UV signal is radiated the detector, infrared light is by stone
Black alkene material layer 2 is absorbed, and is converted to electric signal, and metal electrode 1 by graphene device is received.Meanwhile, by with one
The coupling enhancing of the metallic surface plasma excimer of the metal interdigital electrode 4 of fixed cycle, the response of Graphene infrared detector
Degree is further enhanced, and by setting the insulating medium layer 3 of specific thicknesses scope and relative dielectric constant scope, can be with
Further improve the responsiveness of Graphene infrared detector.Due to the 2 pairs of ultraviolet absorption of monoatomic layer grapheme material layer very
Small, ultraviolet light is absorbed by Al-Ga-N material layer 5, is converted to electric signal, and receive by metal interdigital electrode 4.
It should be noted that herein, such as first and second or the like relational terms are used merely to a reality
Body or operation make a distinction with another entity or operation, and not necessarily require or imply these entities or deposited between operating
In any this actual relation or order.And, term " including ", "comprising" or its any other variant be intended to
Nonexcludability is included, so that process, method, article or equipment including a series of key elements not only will including those
Element, but also other key elements including being not expressly set out, or also include being this process, method, article or equipment
Intrinsic key element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that
Also there is other identical element in process, method, article or equipment including the key element.
The above is only the specific embodiment of the application, it is noted that for the ordinary skill people of the art
For member, on the premise of the application principle is not departed from, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as the protection domain of the application.
Claims (9)
1. a kind of double-color detector, it is characterised in that the double-color detector uses Top-down design structure, wraps successively from bottom to top
Include substrate, Al-Ga-N material layer, metal interdigital electrode, insulating medium layer, grapheme material layer and metal electrode；
Wherein, the cycle T of the metal interdigital electrode and the relation of the peak wavelength of infrared acquisition wave band are λ p=0.6+ α *
T, wherein, α=1~2.
2. double-color detector according to claim 1, it is characterised in that the relative dielectric constant of the insulating medium layer is
2~10.
3. double-color detector according to claim 2, it is characterised in that the thickness of the insulating medium layer is 500~
1000nm。
4. double-color detector according to claim 3, it is characterised in that the relative dielectric constant of the insulating medium layer is
2, thickness is 800nm.
5. double-color detector according to claim 2, it is characterised in that the material of the insulating medium layer be silica,
Silicon nitride or aluminum oxide.
6. double-color detector according to claim 1, it is characterised in that the grapheme material layer is the stone of monoatomic layer
Black alkene material layer.
7. double-color detector according to claim 1, it is characterised in that in the Al-Ga-N material layer, the component of aluminium is
40%~100%.
8. the double-color detector according to claim 1 or 7, it is characterised in that the thickness of the Al-Ga-N material layer is
500nm~1000nm.
9. double-color detector according to claim 1 a, it is characterised in that passivation is additionally provided with the double-color detector
Layer, the material of the passivation layer is silica, silicon nitride or aluminum oxide.
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| CN106057955A (en) * | 2016-06-29 | 2016-10-26 | 北京理工大学 | PtSi infrared detector improving quantum efficiency and preparation method thereof |
| CN108305912B (en) * | 2017-01-11 | 2024-03-26 | 中国科学院上海微系统与信息技术研究所 | Graphene bionic optical detector with wavelength selectivity and preparation method thereof |
| CN107017315B (en) * | 2017-02-17 | 2019-01-08 | 中国电子科技集团公司第五十研究所 | The manufacturing method of the blocking impurity band detector of back electrode structure |
| CN109904247B (en) * | 2017-12-07 | 2020-09-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | Photodetector based on graphene pn junction and manufacturing method and application thereof |
| CN109765648B (en) * | 2019-03-12 | 2021-08-27 | 中国科学院重庆绿色智能技术研究院 | Graphene surface plasmon device, surface plasmon waveguide and photoelectric device |
| CN111370509B (en) * | 2020-03-12 | 2020-11-24 | 中国科学院长春光学精密机械与物理研究所 | AlGaN-based ultraviolet detector with graphene insertion layer and preparation method thereof |
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| CN1696670A (en) * | 2005-06-14 | 2005-11-16 | 中国科学院上海技术物理研究所 | Ultraviolet-infrared bichromatic integrated detector based on gallium nitride |
| CN101586985A (en) * | 2008-05-23 | 2009-11-25 | 中国电子科技集团公司第十三研究所 | Integrated uncooled ir/ultraviolet two-color detector of monolithic and manufacture method thereof |
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| WO2013014330A1 (en) * | 2011-07-27 | 2013-01-31 | Nokia Corporation | An apparatus and associated methods related to detection of electromagnetic signalling |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1696670A (en) * | 2005-06-14 | 2005-11-16 | 中国科学院上海技术物理研究所 | Ultraviolet-infrared bichromatic integrated detector based on gallium nitride |
| CN101586985A (en) * | 2008-05-23 | 2009-11-25 | 中国电子科技集团公司第十三研究所 | Integrated uncooled ir/ultraviolet two-color detector of monolithic and manufacture method thereof |
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