CN105161551A - Surface passivation method capable of reducing dark current of InAs/GaSb superlattice long-wave infrared detector - Google Patents
Surface passivation method capable of reducing dark current of InAs/GaSb superlattice long-wave infrared detector Download PDFInfo
- Publication number
- CN105161551A CN105161551A CN201510501380.1A CN201510501380A CN105161551A CN 105161551 A CN105161551 A CN 105161551A CN 201510501380 A CN201510501380 A CN 201510501380A CN 105161551 A CN105161551 A CN 105161551A
- Authority
- CN
- China
- Prior art keywords
- inas
- gasb
- layer
- gasb superlattice
- dark current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910005542 GaSb Inorganic materials 0.000 title claims abstract description 88
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 title claims abstract description 86
- 229910000673 Indium arsenide Inorganic materials 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000002161 passivation Methods 0.000 title claims abstract description 32
- 238000005516 engineering process Methods 0.000 claims abstract description 23
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 17
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000012360 testing method Methods 0.000 claims abstract description 8
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 7
- 239000000956 alloy Substances 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 20
- 239000000523 sample Substances 0.000 claims description 12
- 239000011435 rock Substances 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 239000007792 gaseous phase Substances 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a surface passivation method capable of reducing the dark current of an InAs/GaSb superlattice long-wave infrared detector. The method comprise the steps that 1) a substrate is used; 2) a GaAs buffer layer is grown on the substrate; 3) a p-type GaSb buffer layer is grown on the GaAs buffer; 4) a p-type InAs/GaSb superlattice layer, an InAs/GaSb superlattice absorption layer, an n-type InAs/GaSb superlattice layer and an InAs cover layer are grown on the GaSb buffer layer; 5) the p-type InAs/GaSb superlattice layer is etched and exposed by utilizing a standard photoetching technology and an inductively coupled plasma etching technology; 6) an alloy electrode Ti/Pt/Au is deposited in the p-type InAs/GaSb superlattice layer and the InAs cover layer by utilizing magnetron sputtering technology, and metal is peeled and cleaned via an acetone solution; and 7) a high-quality SiO2 insulated layer film is grown on the peeled and cleaned substrate at the temperature of 75 DEG C by utilizing an inductively coupled plasma chemical vapor deposition technology, the electrode is etched and exposed, and packaging and test are implemented. The method can be used to reduce the dark current of a device and improve the performance of the device.
Description
Technical field
The invention belongs to semiconductor materials and devices technical field, relate to a kind of surface passivation technique method of InAs/GaSb superlattice infrared detector dark current.
Background technology
It is high that InAs/GaSbII class superlattice have quantum efficiency, band-to-band transition, the feature that dark current is less; By regulating strain and band structure thereof, heavy and light hole can be separated and become large, reducing auger recombination, improving working temperature; The conduction band of its InAs material is under the valence band of GaSb material, and band structure offsets one from another, can by regulating InAs/GaSb thickness and corresponding component thereof, and regulate band structure, make band gap adjustable, response wave length is adjustable within the scope of 3 μm-30 μm.These advantages make InAs/GaSb class superlattice as the most prospect material system of third generation Infrared Detectors, make with military be core Infrared Detectors development rapidly, and be widely used in the fields such as communication, night vision, earth resource detection, strategic early-warning, warning, thermometric, atmospheric monitoring.
Along with detecting the expansion of wavelength and requiring that part table size is constantly less, device dark electric current becomes important performance index, and part table sidewall becomes dark current main source.Have employed different clean, chemical treatment, SiO at present
2passivation, Si
xn
ycovering, (NH
4)
2the technological means such as S passivation, shallow etched mesa isolation reduce the contribution of device sidewall leakage stream for overall dark current.Especially, for long-wave band Infrared Detectors, the emphasis that device sidewall leakage stream becomes research is reduced, wherein SiO
2passivation is merged by extensive concern mutually due to technology maturation and existing semiconductor preparing process.Current SiO
2passivating technique is widely used in shortwave and medium-wave infrared detector, and typical growth temperature is 160 DEG C, 320 DEG C, 350 DEG C, but higher growth temperature is considered to reduce device performance, and effectively can not improve dark current in long wave field.
Summary of the invention
The object of the invention is, in conjunction with present stage semiconductor preparation flow, to provide a kind of surface passivation method that can reduce InAs/GaSb superlattice infrared detector dark current, reduce device dark electric current, improve device performance.
The object of the invention is to be achieved through the following technical solutions:
A surface passivation method for InAs/GaSb superlattice Long Wave Infrared Probe dark current can be reduced, comprise the following steps:
Step 1: get a substrate;
Step 2: at Grown GaAs resilient coating;
Step 3: grow p-type GaSb resilient coating on GaAs resilient coating;
Step 4: growing epitaxial sheet on GaSb resilient coating, epitaxial wafer comprises p-type InAs/GaSb superlattice layer, InAs/GaSb superlattice absorbed layer, N-shaped InAs/GaSb superlattice layer, InAs cap rock;
Step 5: adopt standard photolithography process technology and sense coupling technology (ICP180) etching to expose p-type InAs/GaSb superlattice layer;
Step 6: utilize magnetron sputtering technique deposit alloy electrode Ti/Pt/Au on p-type InAs/GaSb superlattice layer and InAs cap rock, and carry out metal-stripping, cleaning with acetone soln;
Step 7: on the substrate after peeling off, cleaning, utilizes heavy (ICPCVD) technology of inductively coupled plasma chemical gaseous phase to grow SiO at 75 DEG C
2high-quality insulating layer of thin-film, then utilizes reactive ion etching technology (RIE) to etch and exposes electrode, finally encapsulate, test.
In the present invention, described backing material is GaAs.
In the present invention, the growth temperature of described GaAs resilient coating and p-type GaSb resilient coating is respectively 590 DEG C ~ 605 DEG C, 410 DEG C ~ 470 DEG C, and p-type GaSb undoped buffer layer source is Be, and doping content is 1 ~ 2 × 10
18cm
-3.
In the present invention, p-type InAs/GaSb superlattice layer in described growing epitaxial sheet, InAs/GaSb superlattice absorbed layer and N-shaped InAs/GaSb superlattice layer are identical superlattice structure, and p-type InAs/GaSb superlattice layer is that GaSb layer mixes Be, and doping content is 1 ~ 2 × 10
18cm
-3; N-shaped InAs/GaSb superlattice layer is that InAs layer mixes Si, and doping content is 1 ~ 2 × 10
18cm
-3.One-period internal fixtion GaSb layer thickness is that 7ML, InAs layer thickness determines by detecting wavelength, and growth temperature is 390 DEG C ~ 430 DEG C, and growth cycle number is respectively 50,200 ~ 300,50.
In the present invention, the thickness of described alloy electrode Ti/Pt/Au is respectively 50nm, 50nm, 300nm.
In the present invention, SiO
2passivating technique major parameter is: growth temperature 75 DEG C, RF power 150W, ICP power 2400W, used source SiH
4flow is 17SCCM-30SCCM, N
2o flow is 80SCCM-100SCCM, N
2flow is 100SCCM-200SCCM.
The present invention utilizes inductively coupled plasma chemical vapour deposition technique growing high-quality SiO at 75 DEG C
2passivation layer, comparatively gadget dark current, improve device performance, simple to operate, is easy to control, reproducible, can be widely used in classes of semiconductors device passivation.
Accompanying drawing explanation
Fig. 1 is SiO of the present invention
2passivation InAs/GaSb superlattice infrared detector structure schematic diagram;
Fig. 2 is non-passivation and SiO under 77K
2passivation device dark current comparison diagram.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is further described; but be not limited thereto; everyly technical solution of the present invention modified or equivalent to replace, and not departing from the spirit and scope of technical solution of the present invention, all should be encompassed in protection scope of the present invention.
Embodiment 1:
Passivation InAs/GaSb superlattice infrared detector unit device method at present embodiments providing a kind of 75 DEG C, comprises the steps:
Step 1: get a GaAs substrate 11;
Step 2: grow GaAs resilient coating 12 on gaas substrates at 590 DEG C;
Step 3: growing p-type GaSb resilient coating 13, Be doping content on GaAs resilient coating 12 at 470 DEG C is 1 × 10
18cm
-3;
Step 4: grow p-type InAs/GaSb superlattice layer 14, InAs/GaSb superlattice absorbed layer 16, N-shaped InAs/GaSb superlattice layer 17, InAs cap rock 18 on GaSb resilient coating 13 successively; Described p-type InAs/GaSb superlattice layer 14, InAs/GaSb superlattice absorbed layer 16, N-shaped InAs/GaSb superlattice layer 17 are identical superlattice structure, and p-type InAs/GaSb superlattice layer 14 mixes Be for GaSb layer, and doping content is 1 × 10
18cm
-3; N-shaped InAs/GaSb superlattice layer 17 mixes Si for InAs layer, and doping content is 1 × 10
18cm
-3; In one-period, InAs layer thickness is 13ML, GaSb layer thickness is 7ML, and growth temperature is 400 DEG C, and growth cycle number is respectively 50,200,50;
Step 5: adopt standard photolithography process technology and sense coupling technology (ICP180) etching to expose p-type InAs/GaSb superlattice layer 14, etching gas is Cl
2and Ar, gas flow is respectively 3SCCM, 3SCCM;
Step 6: utilize magnetron sputtering technique deposit alloy electrode Ti/Pt/Au19 on p-type InAs/GaSb superlattice layer 14 and InAs cap rock 18, thickness of electrode is 50nm, 50nm, 300nm, and carries out metal-stripping, cleaning with acetone soln; Wherein directly encapsulation is to be measured for a part.
Step 7: another part utilizes heavy (ICPCVD) technology of inductively coupled plasma chemical gaseous phase to grow SiO at 75 DEG C
2insulating barrier 15 pairs of devices carry out passivation, growth temperature 75 DEG C, RF power 150W, ICP power 2400W, used source SiH
4flow is 17SCCM, N
2o flow is 80SCCM, N
2flow is 180SCCM; Then utilize reactive ion etching technology (RIE) to etch and expose electrode, then encapsulate, test.Test utilizes liquid nitrogen as cooling source, at 77K temperature, carries out current-voltage test when unglazed photograph to device, finding, utilizing the SiO of ICPCVD technology growth at 75 DEG C of temperature by contrasting non-passivation and passivation device
2insulating barrier effectively can improve the dark current of device, can reduce an order of magnitude under negative 100mV to 0mV bias voltage.
SiO
2passivation InAs/GaSb superlattice infrared detector structure as shown in Figure 1.
SiO under 77K
2passivation and non-passivation device dark current comparison diagram are as shown in Figure 2.
Embodiment 2:
Step 1: get a GaAs substrate 11;
Step 2: grow GaAs resilient coating 12 on GaAs substrate 11 at 605 DEG C;
Step 3: growing p-type GaSb resilient coating 13, Be doping content on GaAs resilient coating 12 at 410 DEG C is 1 × 10
18cm
-3;
Step 4: growth grows p-type InAs/GaSb superlattice layer 14, InAs/GaSb superlattice absorbed layer 16, N-shaped InAs/GaSb superlattice layer 17, InAs cap rock 18 successively on GaSb resilient coating; Described p-type InAs/GaSb superlattice layer 14, InAs/GaSb superlattice absorbed layer 16, N-shaped InAs/GaSb superlattice layer 17 are identical superlattice structure, and p-type InAs/GaSb superlattice layer 14 mixes Be for GaSb layer, and doping content is 1 × 10
18cm
-3; N-shaped InAs/GaSb superlattice layer 17 mixes Si for InAs layer, and doping content is 1 × 10
18cm
-3; In one-period, InAs layer thickness is 13ML, GaSb layer thickness is 7ML, and growth temperature is 410 DEG C, and growth cycle number is respectively 50,300,50;
Step 5: adopt standard photolithography process technology and sense coupling technology (ICP180) etching to expose p-type InAs/GaSb superlattice layer 14, etching gas is Cl
2and Ar, gas flow is respectively 3SCCM, 3SCCM;
Step 6: utilize magnetron sputtering technique deposit alloy electrode Ti/Pt/Au19 on p-type InAs/GaSb superlattice layer 14 and InAs cap rock 18, thickness of electrode is 50nm, 50nm, 300nm, and carries out metal-stripping, cleaning with acetone soln; A wherein part directly encapsulation, test.
Step 7: heavy (ICPCVD) technology of another part devices use inductively coupled plasma chemical gaseous phase grows SiO at 75 DEG C
2insulating barrier 15 pairs of devices carry out passivation, growth temperature 75 DEG C, RF power 150W, ICP power 2400W, used source SiH
4flow is 30SCCM, N
2o flow is 100SCCM, N
2flow is 150SCCM; Then utilize reactive ion etching technology (RIE) to etch and expose electrode, encapsulation, test.
Claims (10)
1. can reduce a surface passivation method for InAs/GaSb superlattice Long Wave Infrared Probe dark current, it is characterized in that described method step is as follows:
Step 1: get a substrate;
Step 2: at Grown GaAs resilient coating;
Step 3: grow p-type GaSb resilient coating on GaAs resilient coating;
Step 4: growing epitaxial sheet on GaSb resilient coating, epitaxial wafer comprises p-type InAs/GaSb superlattice layer, InAs/GaSb superlattice absorbed layer, N-shaped InAs/GaSb superlattice layer, InAs cap rock;
Step 5: adopt standard photolithography process technology and sense coupling technology etching to expose p-type InAs/GaSb superlattice layer;
Step 6: utilize magnetron sputtering technique deposit alloy electrode Ti/Pt/Au on p-type InAs/GaSb superlattice layer and InAs cap rock, and carry out metal-stripping, cleaning with acetone soln;
Step 7: on the substrate after peeling off, cleaning, utilize inductively coupled plasma chemical gaseous phase technology of sinking to grow SiO at 75 DEG C
2high-quality insulating layer of thin-film, then utilizes reactive ion etching technology to etch and exposes electrode, finally encapsulate, test.
2. the surface passivation method that can reduce InAs/GaSb superlattice Long Wave Infrared Probe dark current according to claim 1, is characterized in that described backing material is GaAs.
3. the surface passivation method that can reduce InAs/GaSb superlattice Long Wave Infrared Probe dark current according to claim 1, is characterized in that the growth temperature of described GaAs resilient coating and p-type GaSb resilient coating is respectively 590 DEG C ~ 605 DEG C, 410 DEG C ~ 470 DEG C.
4. the surface passivation method that can reduce InAs/GaSb superlattice Long Wave Infrared Probe dark current according to claim 1 or 3, it is characterized in that described p-type GaSb undoped buffer layer source is Be, doping content is 1 ~ 2 × 10
18cm
-3.
5. the surface passivation method that can reduce InAs/GaSb superlattice Long Wave Infrared Probe dark current according to claim 1, it is characterized in that described p-type InAs/GaSb superlattice layer, InAs/GaSb superlattice absorbed layer and N-shaped InAs/GaSb superlattice layer are identical superlattice structure, one-period internal fixtion GaSb layer thickness is that 7ML, InAs layer thickness determines by detecting wavelength.
6. the surface passivation method that can reduce InAs/GaSb superlattice Long Wave Infrared Probe dark current according to claim 1, it is characterized in that the growth temperature of described epitaxial wafer is 390 DEG C ~ 430 DEG C, growth cycle number is respectively 50, and 200 ~ 300,50.
7. can reduce the surface passivation method of InAs/GaSb superlattice Long Wave Infrared Probe dark current according to claim 1 or 5, it is characterized in that described p-type InAs/GaSb superlattice layer is that GaSb layer mixes Be, doping content is 1 ~ 2 × 10
18cm
-3.
8. can reduce the surface passivation method of InAs/GaSb superlattice Long Wave Infrared Probe dark current according to claim 1 or 5, it is characterized in that described N-shaped InAs/GaSb superlattice layer is that InAs layer mixes Si, doping content is 1 ~ 2 × 10
18cm
-3.
9. the surface passivation method that can reduce InAs/GaSb superlattice Long Wave Infrared Probe dark current according to claim 1, is characterized in that the thickness of described alloy electrode Ti/Pt/Au is respectively 50nm, 50nm, 300nm.
10. the surface passivation method that can reduce InAs/GaSb superlattice Long Wave Infrared Probe dark current according to claim 1, is characterized in that described SiO
2passivating technique major parameter is: growth temperature 75 DEG C, RF power 150W, ICP power 2400W, used source SiH
4flow is 17SCCM-30SCCM, N
2o flow is 80SCCM-100SCCM, N
2flow is 100SCCM-200SCCM.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510501380.1A CN105161551A (en) | 2015-08-14 | 2015-08-14 | Surface passivation method capable of reducing dark current of InAs/GaSb superlattice long-wave infrared detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510501380.1A CN105161551A (en) | 2015-08-14 | 2015-08-14 | Surface passivation method capable of reducing dark current of InAs/GaSb superlattice long-wave infrared detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105161551A true CN105161551A (en) | 2015-12-16 |
Family
ID=54802364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510501380.1A Pending CN105161551A (en) | 2015-08-14 | 2015-08-14 | Surface passivation method capable of reducing dark current of InAs/GaSb superlattice long-wave infrared detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105161551A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107527958A (en) * | 2017-08-25 | 2017-12-29 | 苏州焜原光电有限公司 | A kind of superlattices infrared detector surface passivation method |
| CN107946400A (en) * | 2017-11-30 | 2018-04-20 | 哈尔滨工业大学 | A kind of horizontal p n knot infrared detectors based on II class superlattices and preparation method thereof |
| CN109585601A (en) * | 2018-11-28 | 2019-04-05 | 中国空空导弹研究院 | A kind of InAlSb infrared detector surface passivation method |
| CN109768097A (en) * | 2019-01-16 | 2019-05-17 | 浙江焜腾红外科技有限公司 | A kind of bis- class superlattices optical detector of InAs/GaNSb with pressure p-type surface state |
| CN116722063A (en) * | 2023-08-10 | 2023-09-08 | 太原国科半导体光电研究院有限公司 | Superlattice infrared detector with planar structure and preparation method thereof |
| CN117855339A (en) * | 2024-03-05 | 2024-04-09 | 山西创芯光电科技有限公司 | Preparation method of superlattice infrared detector with substrate completely removed |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090224228A1 (en) * | 2008-03-05 | 2009-09-10 | Manijeh Razeghi | InAs/GaSb Infrared Superlattice Photodiodes Doped with Beryllium |
| CN101777601A (en) * | 2010-02-03 | 2010-07-14 | 中国科学院半导体研究所 | InAs/GaSb superlattice infrared photoelectric detector and manufacturing method thereof |
| CN102534764A (en) * | 2012-02-17 | 2012-07-04 | 中国科学院半导体研究所 | Method for epitaxially growing type-II superlattice narrow-spectrum infrared photoelectric detector material |
| CN103887360A (en) * | 2014-04-16 | 2014-06-25 | 中国科学院半导体研究所 | InAs/GaSb superlattice infrared photoelectric detector and manufacturing method thereof |
-
2015
- 2015-08-14 CN CN201510501380.1A patent/CN105161551A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090224228A1 (en) * | 2008-03-05 | 2009-09-10 | Manijeh Razeghi | InAs/GaSb Infrared Superlattice Photodiodes Doped with Beryllium |
| CN101777601A (en) * | 2010-02-03 | 2010-07-14 | 中国科学院半导体研究所 | InAs/GaSb superlattice infrared photoelectric detector and manufacturing method thereof |
| CN102534764A (en) * | 2012-02-17 | 2012-07-04 | 中国科学院半导体研究所 | Method for epitaxially growing type-II superlattice narrow-spectrum infrared photoelectric detector material |
| CN103887360A (en) * | 2014-04-16 | 2014-06-25 | 中国科学院半导体研究所 | InAs/GaSb superlattice infrared photoelectric detector and manufacturing method thereof |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107527958A (en) * | 2017-08-25 | 2017-12-29 | 苏州焜原光电有限公司 | A kind of superlattices infrared detector surface passivation method |
| CN107946400A (en) * | 2017-11-30 | 2018-04-20 | 哈尔滨工业大学 | A kind of horizontal p n knot infrared detectors based on II class superlattices and preparation method thereof |
| CN109585601A (en) * | 2018-11-28 | 2019-04-05 | 中国空空导弹研究院 | A kind of InAlSb infrared detector surface passivation method |
| CN109768097A (en) * | 2019-01-16 | 2019-05-17 | 浙江焜腾红外科技有限公司 | A kind of bis- class superlattices optical detector of InAs/GaNSb with pressure p-type surface state |
| CN109768097B (en) * | 2019-01-16 | 2020-10-13 | 浙江焜腾红外科技有限公司 | InAs/GaNSb two-class superlattice photodetector with forced p-type surface state |
| CN116722063A (en) * | 2023-08-10 | 2023-09-08 | 太原国科半导体光电研究院有限公司 | Superlattice infrared detector with planar structure and preparation method thereof |
| CN116722063B (en) * | 2023-08-10 | 2023-10-31 | 太原国科半导体光电研究院有限公司 | Superlattice infrared detector with planar structure and preparation method thereof |
| CN117855339A (en) * | 2024-03-05 | 2024-04-09 | 山西创芯光电科技有限公司 | Preparation method of superlattice infrared detector with substrate completely removed |
| CN117855339B (en) * | 2024-03-05 | 2024-05-14 | 山西创芯光电科技有限公司 | Preparation method of superlattice infrared detector with substrate completely removed |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105161551A (en) | Surface passivation method capable of reducing dark current of InAs/GaSb superlattice long-wave infrared detector | |
| CN106409987B (en) | Based on Ir2O3/Ga2O3Deep ultraviolet APD detection diodes and preparation method thereof | |
| CN101777601B (en) | Manufacturing method of InAs/GaSb superlattice infrared photoelectric detector | |
| CN103928532B (en) | A kind of carborundum groove MOS junction barrier schottky diode and preparation method thereof | |
| CN110571301B (en) | Gallium oxide based solar blind detector and preparation method thereof | |
| CN104157720B (en) | A kind of silica-based avalanche photodetector of Graphene and preparation method of mixed structure | |
| Liu et al. | Fast-response amorphous Ga₂O₃ solar-blind ultraviolet photodetectors tuned by a polar AlN template | |
| CN102361046A (en) | Solar blind ultraviolet detector with AlGaN-based MSM (Metal-Semiconductor-Metal) structure and manufacturing method thereof | |
| CN103681969A (en) | Photoconductive switch manufacturing method based on SiC substrate | |
| CN105720110A (en) | SiC annular floating-point type P+ structured junction barrier Schottky diode and preparation method thereof | |
| CN106129166A (en) | A kind of GaN MoS2subrane detector and preparation method thereof | |
| CN109980040A (en) | A kind of gallium oxide MIS structure ultraviolet detector | |
| CN109698250B (en) | Grid-regulated AlGaN-based metal-semiconductor-metal ultraviolet detector and preparation method thereof | |
| CN109873034A (en) | Normally-off HEMT power device of deposit polycrystalline AlN and preparation method thereof | |
| CN107910750A (en) | A kind of preparation method of semiconductor laser material | |
| Hu et al. | Fabrication and properties of a solar-blind ultraviolet photodetector based on Si-doped β-Ga2O3 film grown on p-Si (111) substrate by MOCVD | |
| CN101692468B (en) | Method for preparing diamond-film photosensitive transistors | |
| CN101409311B (en) | Silicon-based double hetero-junction visible blind ultraviolet detector and manufacturing method thereof | |
| CN103605150A (en) | Schottky neutron detector and manufacturing method thereof | |
| CN106711273A (en) | Doping-variable and component-variable AlGaAsGaAs nuclear radiation detector | |
| CN206480639U (en) | A kind of varying doping becomes component AlGaAsGaAs nuclear radiation detectors | |
| CN107910403B (en) | A kind of preparation method of quantum trap infrared detector part material | |
| CN112018210B (en) | Polarization-enhanced narrow-band AlGaNp-i-n type ultraviolet detector and preparation method thereof | |
| CN103187249B (en) | A kind of preparation method of semiconductor nano material device | |
| CN115332385A (en) | Infrared avalanche photodetector based on macroscopic assembly graphene/epitaxial silicon Schottky junction and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151216 |