CN109768097A - A kind of bis- class superlattices optical detector of InAs/GaNSb with pressure p-type surface state - Google Patents
A kind of bis- class superlattices optical detector of InAs/GaNSb with pressure p-type surface state Download PDFInfo
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- CN109768097A CN109768097A CN201910039000.5A CN201910039000A CN109768097A CN 109768097 A CN109768097 A CN 109768097A CN 201910039000 A CN201910039000 A CN 201910039000A CN 109768097 A CN109768097 A CN 109768097A
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- surface state
- superlattices
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- inas
- uptake zone
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Abstract
The invention discloses a kind of with the bis- class superlattices optical detector of InAs/GaNSb for forcing p-type surface state, the uptake zone of optical detector is p-type, the uptake zone of two class superlattices optical detectors includes InAs layers and GaSb layers, N element has been condensated into GaSb layers, superlattices top of valence band in the band structure of uptake zone is raised higher than the surface state of uptake zone to N element or superlattices top of valence band is raised to lower than surface state but is less than 3kBT with the distance between surface state.The present invention is by condensating into a certain amount of N element in the GaSb layer of traditional bis- class superlattices optical detector uptake zone InAs/GaSb, superlattices valence band in uptake zone is made to be raised higher than the surface state of uptake zone by N element, or superlattices top of valence band is raised to lower than surface state but is less than 3kBT with the distance between surface state, so that surface state is transformed into the p-type with uptake zone homotype, surface SRH dark current is eliminated, the performance of detector is improved.
Description
Technical field
The invention belongs to two class superlattices optical detector technical fields, and in particular to a kind of with forcing p-type surface state
Bis- class superlattices optical detector of InAs/GaNSb.
Background technique
Surface state is the electron energy state of locality near solid Free Surface or solid interface.Due to surface of solids atom
Structure is different from internal atomic structure, so that surface energy level had both been different from solid physical efficiency band, also different from isolated atom energy level.Half
Conductive surface state is usually located in basic forbidden band or forbidden band adjacent edges.The Fermi of current InAs/GaSb optical detector surface state
Energy level is respectively positioned in forbidden band.Uptake zone in common detector is mostly weak p-type, and such minority carrier is electronics, is had than sky
The much higher mobility in cave.P-type uptake zone and above-mentioned surface state will form a large amount of complex centre SRH, so as to cause large surface
Dark current limits the performance of detector.
Summary of the invention
In order to solve the above technical problems, the technical solution adopted by the present invention is that: it is a kind of with forcing p-type surface state
Bis- class superlattices optical detector of InAs/GaNSb, the uptake zone of the optical detector are p-type, the two classes superlattices optical detector
Uptake zone include InAs layers and GaSb layers, it is GaSb layers described in condensated into N element, N element is by the band structure of uptake zone
Middle superlattices top of valence band is raised higher than the surface state of uptake zone or superlattices top of valence band is raised to lower than surface state but and table
The distance between face state be less than 3kBT, wherein kB be Boltzmann constant simultaneously, T is bis- class superlattices optical detector of InAs/GaSb
Operating temperature.
N element content in GaSb layers is less than 5%.
The beneficial effects of the present invention are: the present invention passes through in traditional bis- class superlattices optical detector of InAs/GaSb absorption
A certain amount of N element is condensated into the GaSb floor in area, makes superlattices valence band in uptake zone be raised higher than uptake zone by N element
Surface state or superlattices top of valence band be raised to lower than surface state but be less than 3kBT with the distance between surface state, to make
It obtains surface state and is transformed into the p-type with uptake zone homotype, eliminate surface SRH dark current, improve the performance of detector.
Detailed description of the invention
Fig. 1 is the band structure schematic diagram of two class superlattices optical detector of InAs/GaSb of the present invention (N)；
Fig. 2 is the band structure schematic diagram of traditional bis- class superlattices optical detector of InAs/GaSb.
Specific embodiment
Now in conjunction with attached drawing, the invention will be further described.
As shown in Figs. 1-2, a kind of with the bis- class superlattices optical detector of InAs/GaNSb for forcing p-type surface state, it is described
The uptake zone of optical detector is p-type, and the uptake zone of the two classes superlattices optical detector includes InAs layers and GaSb layers, described
N element is condensated into GaSb layers, superlattices top of valence band in the band structure of uptake zone is raised higher than the table of uptake zone by N element
Face state or superlattices top of valence band are raised to lower than surface state but are less than 3kBT with the distance between surface state, and wherein kB is glass
The graceful constant of Wurz, T are the operating temperatures of bis- class superlattices optical detector of InAs/GaSb.
N element content in GaSb layers is less than 5%.
Specific structure can be 7ML InAs/10ML GaN0.01Sb0.99。
The preferred embodiment of the present invention has been described in detail above, it should be understood that those skilled in the art without
It needs creative work according to the present invention can conceive and makes many modifications and variations, therefore, all technologies in the art
Personnel are available by logical analysis, reasoning, or a limited experiment on the basis of existing technology under this invention's idea
Technical solution, all should be within the scope of protection determined by the claims.
Claims (2)
1. a kind of with the bis- class superlattices optical detector of InAs/GaNSb for forcing p-type surface state, the absorption of the optical detector
Area is p-type, and the uptake zone of the two classes superlattices optical detector includes InAs layers and GaSb layers, which is characterized in that described
N element is condensated into GaSb layers, superlattices top of valence band in the band structure of uptake zone is raised higher than the table of uptake zone by N element
Face state or superlattices top of valence band are raised to lower than surface state but are less than 3kBT with the distance between surface state, and wherein kB is glass
Simultaneously, T is the operating temperature of bis- class superlattices optical detector of InAs/GaSb to the graceful constant of Wurz.
2. as described in claim 1 have the bis- class superlattices optical detector of InAs/GaNSb for forcing p-type surface state, feature
Be, it is GaSb layers described in N element content less than 5%.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910039000.5A CN109768097B (en) | 2019-01-16 | 2019-01-16 | InAs/GaNSb two-class superlattice photodetector with forced p-type surface state |
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| CN201910039000.5A CN109768097B (en) | 2019-01-16 | 2019-01-16 | InAs/GaNSb two-class superlattice photodetector with forced p-type surface state |
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| CN109768097A true CN109768097A (en) | 2019-05-17 |
| CN109768097B CN109768097B (en) | 2020-10-13 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090224228A1 (en) * | 2008-03-05 | 2009-09-10 | Manijeh Razeghi | InAs/GaSb Infrared Superlattice Photodiodes Doped with Beryllium |
| CN102569521A (en) * | 2012-02-02 | 2012-07-11 | 中国科学院半导体研究所 | Manufacturing method of passivated InAs/GaSb secondary category superlattice infrared detector |
| CN105161551A (en) * | 2015-08-14 | 2015-12-16 | 哈尔滨工业大学 | Surface passivation method capable of reducing dark current of InAs/GaSb superlattice long-wave infrared detector |
-
2019
- 2019-01-16 CN CN201910039000.5A patent/CN109768097B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090224228A1 (en) * | 2008-03-05 | 2009-09-10 | Manijeh Razeghi | InAs/GaSb Infrared Superlattice Photodiodes Doped with Beryllium |
| CN102569521A (en) * | 2012-02-02 | 2012-07-11 | 中国科学院半导体研究所 | Manufacturing method of passivated InAs/GaSb secondary category superlattice infrared detector |
| CN105161551A (en) * | 2015-08-14 | 2015-12-16 | 哈尔滨工业大学 | Surface passivation method capable of reducing dark current of InAs/GaSb superlattice long-wave infrared detector |
Non-Patent Citations (2)
| Title |
|---|
| HARI P.NAIR 等: "《Dilute-Nitride Active Regions on GaSb for Mid-Infrared Semiconductor Diode Lasers》", 《2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)》 * |
| 陈熙仁: "《红外调制光谱研究Ⅲ-Ⅴ族窄禁带锑化物与稀铋半导体电子能带结构》", 《中国博士学位论文全文数据库》 * |
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| CN109768097B (en) | 2020-10-13 |
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