CN107527958A - A kind of superlattices infrared detector surface passivation method - Google Patents
A kind of superlattices infrared detector surface passivation method Download PDFInfo
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- CN107527958A CN107527958A CN201710740572.7A CN201710740572A CN107527958A CN 107527958 A CN107527958 A CN 107527958A CN 201710740572 A CN201710740572 A CN 201710740572A CN 107527958 A CN107527958 A CN 107527958A
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- 238000002161 passivation Methods 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 31
- 239000013078 crystal Substances 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 7
- 238000004140 cleaning Methods 0.000 claims abstract description 5
- 238000011109 contamination Methods 0.000 claims abstract description 5
- 230000008021 deposition Effects 0.000 claims abstract description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 2
- 229910052754 neon Inorganic materials 0.000 claims description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 230000001629 suppression Effects 0.000 abstract description 3
- 239000000523 sample Substances 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 7
- 229910000673 Indium arsenide Inorganic materials 0.000 description 5
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910005542 GaSb Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
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Abstract
A kind of superlattices infrared detector surface passivation method of the present invention, step 1：Take and completed mesa etch and unpassivated super crystal lattice material sample, sample is fitted into high-vacuum chamber after cleaning, vacuum is higher than 10‑6Torr；Step 2：The surface and side wall of superlattices table top are cleared up at a temperature of 0 150 DEG C using atomic layer lithographic technique, to etch and remove the amounts of residual contamination of oxide layer and preceding road technique in surface and side wall；Step 3：After atomic layer etch step terminates, technique for atomic layer deposition layer by layer deposition growth of passivation layer at a temperature of 0 280 DEG C is utilized in same vacuum system, to be passivated the surface of superlattices table top and side wall.The present invention can effectively improve the lateral resistivity of table top, so as to suppression device electric leakage in side direction, lift detector performance.
Description
Technical field
The invention belongs to semiconductor materials and devices technical field, specifically a kind of superlattices infrared detector surface passivation
Method, it can be applied to the surface passivation of II class superlattices infrared detector device.
Background technology
The II class super crystal lattice material based on III-V race semiconductor InAs/GaSb is a kind of new infrared detector material,
Compared to mercury cadmium telluride and superlattices detector in the market, have and 1) can be adjusted on a large scale by changing superlattice structure
Detect wavelength；2) auger recombination probability is relatively low, is advantageous to improve operating temperature；3) Infrared Absorption Coefficient of material is high, interband jump
The photoelectric efficiency moved is high；4) the electron tunneling probability of superlattice structure is relatively low, so as to reduce dark current；5) large area array device is made
The more low many advantages of cost and difficulty of part, therefore infrared detector increasingly expands in military and civil area application
Exhibition, covers strategic early-warning, battlefield surveillance, atmospheric monitoring, space communication, spaceborne detection, safety monitoring, intelligent transportation and medical treatment
Deng field.
When making superlattices infrared detector device, it is necessary to which the superlattices epitaxial wafer grown is etched into discrete platform
Face, now the side wall of table top become exposed new surface in the environment.Two class super crystal lattice materials are due to effective energy gap
Very little (is less than 0.3eV, some is even less than 0.03eV), on the surface of material because the presence energy band at interface will be bent, energy
The bending of band is easy to produce the potential well of carrier on small gap material surface, so as to form surface conductive layer；Meanwhile InAs,
Two kinds of materials of GaSb are all oxidized easily, and are formed the semimetal As of simple substance and residued in mesa sides with metal Sb, make surface
It is coarse, surface state is introduced, increase surface non-radiative is compound, increases sidewall leakage, so surface passivation technology is to II class superlattices
The performance of infrared detector is most important.It is further noted that InAs/GaSb super crystal lattice materials are impatient at the work of high temperature
Skill process, and the technological temperature in passivation layer growth technique common at present more than 300 DEG C can cause to damage to superlattice structure
So as to influence its performance, therefore it is highly desirable to develop a kind of surface passivation technology of low temperature.
The content of the invention
It is an object of the invention to provide a kind of superlattices infrared detector surface passivation method, it is lateral table top can be effectively improved
Resistivity, so as to suppression device electric leakage in side direction, lift detector performance.
The present invention is achieved through the following technical solutions above-mentioned purpose：
A kind of superlattices infrared detector surface passivation method, comprises the following steps：
Step 1：Take and completed mesa etch and unpassivated super crystal lattice material sample, sample is loaded into height after cleaning
In vacuum chamber, vacuum is higher than 10-6Torr；
Step 2：Carried out using surface of the atomic layer lithographic technique at a temperature of 0-150 DEG C to superlattices table top and side wall
Cleaning, to etch and remove the amounts of residual contamination of oxide layer and preceding road technique in surface and side wall；
Step 3：After atomic layer etch step terminates, using technique for atomic layer deposition in 0-280 in same vacuum system
Layer by layer deposition growth of passivation layer at a temperature of DEG C, to be passivated the surface of superlattices table top and side wall.
Further, the super crystal lattice material is the class superlattices infrared detector material of antimonide base II.
Further, the atomic layer etching in the step 2 is to expose the samples to containing chlorine plasma, containing argon or contain
In the ALT pulse of neon plasma, successively to etch the surface of sample and side wall, the repetition period of ALT pulse is more than or waited
In 1.
Further, the passivation material of the atom layer deposition process growth in the step 3 includes aluminum oxide, oxidation
Silicon, silicon nitride or III-V compounds of group, passivation layer passivation material as described in individual layer, two layers or multilayer, which stacks, to be formed,
Further, the passivation layer gross thickness is 2-1000 nanometers.
Compared with prior art, the beneficial effect of superlattices infrared detector surface passivation method of the present invention is：1) technique
Whole process is all carried out in same high vacuum system, and midway does not expose air, and the material surface after clearing up will not be again by oxygen
Change or adsorption moisture；2) surface of table top and side wall pass through the cleaning of atomic layer lithographic technique, oxide layer and foreign-matter contamination quilt
Remove totally, ensured the interface quality between passivation layer and superlattices, higher lateral resistivity, suppression device can be obtained
Electric leakage in side direction, lift device performance；3) during technique for atomic layer deposition growth of passivation layer, the depositing temperature of use is relatively low, therefore blunt
Change technical process to superlattice structure not damaged；4) passivation layer thickness of technique for atomic layer deposition deposition is uniform, element proportioning essence
Really, resistivity is high, and the high quality passivation of large area array device can be achieved；5) atomic layer etching and technique for atomic layer deposition are all to have certainly
The technical process of restricted, isotropism and form-dependent character, process thickness can be controlled by number reaction time, and etched
Or growth is not influenceed by mesa shape or height, therefore this passivation technology is easily controllable, repeated height, can be applied to each wave band
The surface passivation of superlattices infrared detector device.
Brief description of the drawings
Fig. 1 is the superlattices table top schematic diagram after transpassivation.
Fig. 2 is not to be passivated to scheme with the lateral resistivity contrasts of table top for being passivated device under 83K.
Embodiment
Technical scheme is further described below in conjunction with the accompanying drawings.
Embodiment shows a kind of superlattices infrared detector surface passivation method, in order to show the passivation of present invention effect
Fruit, include the step of the present embodiment：
Step 1：Four are taken to complete mesa etch and unpassivated super crystal lattice material sample, super crystal lattice material is antimony
The class superlattices infrared detector material of compound base II, includes but not limited to InAs/GaSb superlattices, InAs/InAsSb superlattices
It is the Long Wave Infrared Probe material that 90% cutoff wavelength is 12.3 microns Deng, sample, mesa shape is square, the table top length of side
Respectively 75 microns, 150 microns, 270 microns and 400 microns, are fitted into high-vacuum chamber, vacuum after sample is cleaned with acetone
Degree is higher than 10-6Torr, preferably 5 × 10-7Torr；
Step 2：Etching (Atomic Layer Etching, ALE) using atomic layer, technology is at 0-150 DEG C, and preferably 30
The surface of superlattices table top and side wall are cleared up at DEG C, to etch and remove oxide layer and the preceding road in surface and side wall
The amounts of residual contamination of technique, atomic layer etching is using the ALT pulse containing chlorine plasma and containing argon plasma, alternating
The repetition period of pulse is more than or equal to 1, preferably repeats to etch 5 cycles, etch thicknesses are about 1 nanometer；
Step 3：After atomic layer etch step terminates, ald (Atomic is used in same vacuum system immediately
Layer Deposition, ALD) technology growth passivation material, passivation material include aluminum oxide, silica, silicon nitride or
III-V compounds of group, passivation layer can be made up of single above-mentioned material, can also be stacked by two layers or multilayer above-mentioned material and
Into passivation layer gross thickness is 2-1000 nanometers.Passivation layer is preferably alumina passivation layer, and depositing temperature is 0-280 DEG C, is preferably
120 DEG C, deposited using the ALT pulse of trimethyl aluminium and hydrone, the alumina passivation layer thickness for depositing to obtain is received for 10
Rice.
As a comparison, while four additional is taken to complete mesa etch but blunt without surface with size identical in step 1
The super crystal lattice material sample of change is to be measured.
Fig. 1 is the superlattice device schematic diagram through transpassivation, and wherein P1 represents superlattices table top, and P2 represents passivation layer, P3
The sample substrate where superlattices is represented, P4 and P5 represent a pair of electrodes of device.
By the use of liquid nitrogen as cooling source, all R not being passivated with passive sample are measured at a temperature of 83K0A values, then
As shown in Fig. 2 by the girth area of each sample than P/A and R0The inverse of A values makees linear fit, uses formula：
It is not passivated the ρ with passive sampleSurfaceValue, the i.e. lateral resistivity of table top.Contrast it is visible, using this
After invention passivating method, the lateral resistivity of table top of device has brought up to 137k Ω cm by 10.5k Ω cm, improves one
The order of magnitude, while the quality of super crystal lattice material has no degeneration, this shows that passivation technology of the present invention effectively inhibits the side wall of device
Electric leakage, serves good passivation.
Above-described is only one embodiment of the present invention.For the person of ordinary skill of the art, not
On the premise of departing from the invention design, various modifications and improvements can be made, these belong to the protection model of the present invention
Enclose.
Claims (5)
1. a kind of superlattices infrared detector surface passivation method, it is characterised in that comprise the following steps：
Step 1：Take and completed mesa etch and unpassivated super crystal lattice material sample, sample is loaded into high vacuum after cleaning
In chamber, vacuum is higher than 10-6Torr；
Step 2：The surface and side wall of superlattices table top are cleared up at a temperature of 0-150 DEG C using atomic layer lithographic technique,
To etch and remove the amounts of residual contamination of oxide layer and preceding road technique in surface and side wall；
Step 3：After atomic layer etch step terminates, using technique for atomic layer deposition in 0-280 DEG C of temperature in same vacuum system
The lower layer by layer deposition growth of passivation layer of degree, to be passivated the surface of superlattices table top and side wall.
2. superlattices infrared detector surface passivation method according to claim 1, it is characterised in that：The superlattices material
Expect for the class superlattices infrared detector material of antimonide base II.
3. superlattices infrared detector surface passivation method according to claim 1, it is characterised in that：In the step 2
Atomic layer etching be to expose the samples in the ALT pulse containing chlorine plasma, containing argon or the plasma containing neon, with successively
Surface and the side wall of sample are etched, the repetition period of ALT pulse is more than or equal to 1.
4. superlattices infrared detector surface passivation method according to claim 1, it is characterised in that：In the step 3
Atom layer deposition process growth passivation material include aluminum oxide, silica, silicon nitride or III-V compounds of group, it is described
Passivation layer passivation material as described in individual layer, two layers or multilayer, which stacks, to be formed.
5. superlattices infrared detector surface passivation method according to claim 4, it is characterised in that：The passivation layer is total
Thickness is 2-1000 nanometers.
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| CN201710740572.7A CN107527958A (en) | 2017-08-25 | 2017-08-25 | A kind of superlattices infrared detector surface passivation method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111129223A (en) * | 2019-12-26 | 2020-05-08 | 苏州焜原光电有限公司 | Novel superlattice infrared detector preparation method |
| CN112635581A (en) * | 2020-12-30 | 2021-04-09 | 安徽光智科技有限公司 | Infrared detector and preparation method thereof |
| CN112838143A (en) * | 2020-12-31 | 2021-05-25 | 横店集团东磁股份有限公司 | Deposition method of aluminum oxide film in PERC battery |
| CN114256379A (en) * | 2020-09-11 | 2022-03-29 | 上海丽恒光微电子科技有限公司 | Refrigeration infrared detector and preparation method thereof |
| CN114256378A (en) * | 2020-09-11 | 2022-03-29 | 上海丽恒光微电子科技有限公司 | Refrigeration infrared detector and preparation method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111129223A (en) * | 2019-12-26 | 2020-05-08 | 苏州焜原光电有限公司 | Novel superlattice infrared detector preparation method |
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| CN114256379A (en) * | 2020-09-11 | 2022-03-29 | 上海丽恒光微电子科技有限公司 | Refrigeration infrared detector and preparation method thereof |
| CN114256378A (en) * | 2020-09-11 | 2022-03-29 | 上海丽恒光微电子科技有限公司 | Refrigeration infrared detector and preparation method thereof |
| CN112635581A (en) * | 2020-12-30 | 2021-04-09 | 安徽光智科技有限公司 | Infrared detector and preparation method thereof |
| CN112838143A (en) * | 2020-12-31 | 2021-05-25 | 横店集团东磁股份有限公司 | Deposition method of aluminum oxide film in PERC battery |
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Application publication date: 20171229 |