CN109686810A - Side grid field effect transistor terahertz detector and preparation method thereof - Google Patents

Side grid field effect transistor terahertz detector and preparation method thereof Download PDF

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Publication number
CN109686810A
CN109686810A CN201811559379.4A CN201811559379A CN109686810A CN 109686810 A CN109686810 A CN 109686810A CN 201811559379 A CN201811559379 A CN 201811559379A CN 109686810 A CN109686810 A CN 109686810A
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table top
effect transistor
field effect
grid
substrate
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颜伟
张博文
黄镇
李兆峰
刘雯
韩国威
王晓东
杨富华
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Institute of Semiconductors of CAS
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Abstract

The invention discloses a kind of side grid field effect transistor terahertz detectors, comprising: substrate；Table top, by by growth on substrate active layer etching after formed, or by growing active layer on substrate after, formed after etched portions substrate and active layer；Grid, setting are located at table top two sides, form Schottky contacts with table top；Source electrode and drain electrode, setting are located at the other two sides of table top, form Ohmic contact with table top.The present invention is designed using side gate transistor device structure, the spurious mode in channel can be greatly reduced, to improve the resonance response characteristic of transistor terahertz detector.

Description

Side grid field effect transistor terahertz detector and preparation method thereof
Technical field
The present invention relates to terahertz detections and field of manufacturing semiconductor devices, and in particular to a kind of side grid field effect transistor Structure of terahertz detector and preparation method thereof.
Background technique
THz wave due to its band characteristic, be suitable for material characterization, high-resolution imaging, medical diagnosis, safety check, The various fields such as information communication, radar detection, atmosphere and environment measuring, national economy and in terms of all have Important application prospect.Traditional terahertz detector needs work in low temperature mostly, and volume is larger, inconvenient to use, and responds Speed is slower.FET sensor is a kind of continuously adjustable terahertz detection of look-in frequency developed in recent years Device.Its basic detection principle is formed under specific boundary conditions using the two-dimensional electron gas in field-effect transistor structure Plasma wave oscillation effect couples or resonates with incident THz wave, and then converts in the output end of transistor For photoelectric current or photovoltage.High electron mobility transistor detector based on two-dimensional electron gas has high speed, highly sensitive, low The advantages such as noise, high-frequency distinguishing, working and room temperature.In addition, the detector be also equipped with structure it is simple, it is simple for production, be easy to plus The features such as work integrates obtains the great attention of people at present.
THz wave detection, which is carried out, using field effect transistor is divided into off-resonance detection mode and resonant probe mould Formula.People have carried out a large amount of research to the off-resonance detection of field effect transistor and resonant probe, and use GaAs, nitrogen The FET device of the change multiple materials such as gallium and indium phosphide has been observed in low temperature and at room temperature to THz wave Resonance response.But the progress in field effect transistor Terahertz resonant probe field is slow.The resonance reported a little at present The experimental result of detection is far below theory expectation.This is mainly reflected in two o'clock: first point be resonant probe responsiveness it is very low, very To lower than the responsiveness under off-resonance detection mode；Second point is that the bandwidth of resonant probe response peak is very big, does not meet resonance and visits The theoretical model of survey.Two above phenomenon also limits resonant probe mode the answering in practical field of field effect transistor With.
The reason of generating the above phenomenon is since the grid width (W) of the transistor of conventional structure can all be much larger than the grid of transistor Long (L), causes the plasma wave in transistor channel other than natural oscillation mode, there is also other spurious modes, So that the resonant probe peak stretching of transistor, responsiveness decline.As shown in Figure 9 and Figure 10.There is study group to attempt using dry The method of method etching reduces the grid width of transistor, but this method is limited to the result promotion of resonant probe.Though because firstly, Right dry etching can be such that the roomy amplitude of transistor gate reduces, but because technological ability limits, the transistor grid width after etching Still long in same order with transistor gate；Secondly, the plasma bombardment in dry etching is brought to the side wall of table top Etching injury, increases sidewall surfaces roughness, and then increase the surface scattering of two-dimensional electron gas, reduces Two-dimensional electron The mobility of gas.It can thus be seen that relying solely on dry etch process physically to reduce the grid width of transistor, it is difficult to reach To the requirement theoretically to terahertz detector resonant probe.
Summary of the invention
The purpose of the present invention is to provide a kind of side grid field effect transistor terahertz detectors and preparation method thereof, so that Field effect transistor Terahertz device is in terahertz light spectroscopy, terahertz imaging, the application performance in the fields such as safety check and biomedicine It effectively improves.
In view of this, the present invention provides a kind of side grid field effect transistor terahertz detectors, wherein applied field Effect transistor includes: Metal-Oxide Semiconductor field effect transistor, and metal-semiconductor field effect transistor, metal-is absolutely Edge semiconductor field effect transistor, modulation-doped FET, junction field effect transistor and high electron mobility field effect Answer transistor.
Grid field effect transistor terahertz detector in side provided by the invention includes:
Substrate；
Further, substrate material are as follows: gallium nitride, GaAs, indium phosphide, diamond, sapphire, silicon carbide or silicon.
Table top, by by growth on substrate active layer etching after formed, or by growing active layer on substrate after, carve It is formed after erosion section substrate and active layer；
Further, table top is relative to substrate protrusion, and table surface height is more than or equal to active layer thickness.
Grid, setting are located at table top two sides, form Schottky contacts with table top；
Further, the number of grid is 2 or 2 or more, wherein at least has 2 grids to be located at the two of table top Side, and be only in contact with the side surface of table top.
Source electrode and drain electrode, setting are located at the other two sides of table top, form Ohmic contact with table top.
Further, source electrode and drain electrode forms Ohm contact electrode, which connects with the side surface of table top Touching, or be in contact with the upper surface of table top, or be in contact simultaneously with the side surface of table top and upper surface.
Further, above-mentioned grid, source electrode and drain electrode material comprise at least one of the following: Ti, Al, Ni, Mo, Pt, Pd, Au, W, TiW and TiN.
Based on above-mentioned side grid field effect transistor terahertz detector, the present invention also provides a kind of above-mentioned side gate field-effects The preparation method of transistor terahertz detector, comprising:
On substrate by injecting, spreading or be epitaxially-formed active layer；
It etches active layer or active layer and section substrate to form table top, the height of table top is more than or equal to the thickness for having edge layer Degree；
Ohm contact electrode is prepared at the both ends of table top；
Gate electrode is prepared at the other both ends of table top.
The advantage of the invention is that designing using side gate transistor device structure, (grid can be parallel in the horizontal direction Pole and substrate direction) it is modulated by the electricity of side grid to control the width of FET device two-dimensional electron gas channel, together When two-dimensional electron gas is not caused to exhaust (perpendicular to grid and substrate direction) in vertical direction and (keeps two-dimensional electron gas Concentration and mobility are constant).So it so that transistor device is formed nano wire Two-dimensional electron gas channel, but also can make Two-dimensional electron gas is not influenced by dry etching damage, keeps the high mobility of two-dimensional electron gas.Using side gate transistor structure, The spurious mode in channel can be greatly reduced, to improve the resonance response characteristic of transistor terahertz detector.
Detailed description of the invention
To further illustrate the contents of the present invention and feature, it is detailed that one is made to the present invention with reference to the accompanying drawings and embodiments Description, in which:
Fig. 1-Fig. 7 is the process flow chart of the embodiment of the present invention；
Fig. 8 is the structural schematic diagram of grid field effect transistor terahertz detector in side provided in an embodiment of the present invention；
Fig. 9-Figure 10 is propagation schematic diagram of the plasma wave in the transistor of different grid width；
Figure 11-Figure 12 is the schematic illustration that grid field effect transistor electricity in side modulates two-dimensional electron gas channel width.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference Attached drawing, the present invention is described in further detail.
One embodiment of the invention provides a kind of side grid field effect transistor terahertz detector, and applied field-effect is brilliant Body pipe includes but is not limited to: Metal-Oxide Semiconductor field effect transistor, metal-semiconductor field effect transistor, metal- Insulator-semiconductor field effect transistor, modulation-doped FET, junction field effect transistor and high electron mobility field Effect transistor.
Fig. 8 is please referred to, is the concrete structure schematic diagram of the present embodiment, it can be seen that the detector includes:
Substrate；
In the present embodiment, substrate 100, material includes but is not limited to gallium nitride, GaAs, indium phosphide, diamond, Lan Bao Stone, silicon carbide and silicon.
Table top, by by growth on substrate active layer etching after formed, or by growing active layer on substrate after, carve It is formed after erosion section substrate and active layer；
In some embodiments, table top is relative to substrate protrusion, and table surface height is more than or equal to active layer thickness.
In the present embodiment, please refer to Fig. 1-Fig. 3, on substrate 100 in the way of injection, doping or epitaxial growth etc. shape At active layer 200, the active layer 200 and section substrate are etched, obtains a table top 210, which is in a square relative to substrate Shape protrusion, there are four side surface 211,212,213,214 and a upper surfaces 215 for tool.
The detector further comprises:
Source electrode and drain electrode, setting are located at table top two sides, form Ohmic contact with table top.
In some embodiments, source electrode and drain electrode forms Ohm contact electrode, the side surface of the Ohm contact electrode and table top It is in contact, or is in contact with the upper surface of table top, or be in contact simultaneously with the side surface of table top and upper surface.
In the present embodiment, referring to figure 4. and Fig. 5, Ohm contact electrode 301,302, the both side surface with rectangular mesa 211, it 213 is in contact.
In another embodiment, Ohm contact electrode 301,302 is in contact (in figure not with the upper surface 215 of rectangular mesa Show).
In another embodiment, a side surface 211 and upper surface 215 for an Ohm contact electrode 301 and rectangular mesa is simultaneously It is in contact, the same phase in another corresponding side surface 213 and upper surface 215 of another Ohm contact electrode 302 and rectangular mesa Contact (not shown).
The detector further include:
Grid, setting are located at the other two sides of table top, form Schottky contacts with table top；
In some embodiments, the number of grid is 2 or 2 or more, wherein at least has 2 grids to be located at table top Two sides, and be only in contact with the side surface of table top.
In the present embodiment, Fig. 6 and Fig. 7 are please referred to, there are two grids 401,402 for tool, are located at rectangular mesa in addition Two sides form Schottky contacts with the other both side surface 212,214 of rectangular mesa.
In some embodiments, above-mentioned grid, source electrode and drain electrode material comprise at least one of the following or several: Ti, Al, Ni, Mo, Pt, Pd, Au, W, TiW and TiN.
Based on above-mentioned side grid field effect transistor terahertz detector, another embodiment of the present invention provides a kind of side grid fields The preparation method of effect transistor terahertz detector, includes the following steps:
Step 1: on substrate by injecting, spreading or be epitaxially-formed active layer；
In the present embodiment, then Fig. 1 is please referred to, the sides such as injection, doping or epitaxial growth are utilized on sample 100 to be prepared Formula forms active layer 200.The material of the sample 100 can be gallium nitride, GaAs, indium phosphide, diamond, sapphire, carbonization Silicon or silicon.
Step 2: etching active layer or active layer and section substrate to form table top, the height of table top, which is more than or equal to, has chance with The thickness of layer；
In the present embodiment, then referring to figure 2. and Fig. 3, on sample 100 to be prepared using photoetching combination dry etching or Wet etch techniques form table top figure 210.Wherein: the shape of table top figure 210 can be square or rectangle or for its His shape；Table top figure 210 possesses 4 side surfaces, and respectively 211,212,213,214；Table top figure 210 possesses 1 upper table Face is 215；The height of the table top figure 210 is greater than the thickness of active layer 200.In this way, to the active area of device into Row isolation.
Step 3: preparing Ohm contact electrode at the both ends of table top；
In the present embodiment, then referring to figure 4. and Fig. 5, using photoetching, electron beam evaporation or sputtering technology, in table top figure The both ends of shape 210 prepare metal electrode 301 and 302.Metal electrode 301 and 302 must be contacted with generating between active layer 200.Tool For body: metal electrode 301 and 302 both can be contacted only with the side surface of table top figure 210 211 and 213, can also only with platform The upper surface 215 of face figure 210 contacts, it might even be possible at the same with the side surface of table top figure 210 211 and 213 and table top figure The upper surface 215 of shape 210 is in contact.Be shown as in figure, the side surface 211 of metal electrode 301 and 302 and table top figure 210 and 213 are in contact, and Ohmic contact is formed between metal electrode 301 and 302 and active layer 200, in order to achieve this goal, must having In the case where wanting, high temperature alloy annealing must be carried out to sample.The metal of metal electrode 301 and 302 can for Ti, Al, Ni, Mo, Pt, Pd, Au, W, TiW, TiN and any combination between them.
Step 4: preparing gate electrode at the other both ends of table top；
In the present embodiment, then Fig. 6 and Fig. 7 are please referred to, using photoetching, electron beam evaporation or sputtering technology, in table top figure The other both ends of shape 210 prepare metal electrode 401 and 402.It generates and contacts between metal electrode 401 and 402 and active layer 200. Specifically: metal electrode 401 and 402, which only allows to generate with the side surface 212 and 214 of table top figure 210, to be contacted, it is not possible to The upper surface 215 of table top figure 210 generates contact.Palpiform is at schottky junctions between metal electrode 401 and 402 and active layer 200 Touching.The metal of metal electrode 401 and 402 can be Ti, Al, Ni, Mo, Pt, Pd, Au, W, TiW, TiN and any between them Combination.
So far, the structure design of side grid field effect transistor terahertz detection device is completed.
Based on side grid field effect transistor terahertz detection device structure provided by the invention, at this to its excellent Gesture is described in further detail, and please refers to Fig. 9 to Figure 12, shows grid field effect transistor electricity tune in side provided by the present invention The basic principle of Two-dimensional electron gas channel processed.
Figure 11 is please referred to, first to apply negative electricity when two side grid of side gate transistor with high electron mobility terahertz detector When pressure, two side grid can start to exhaust the two-dimensional electron gas in high electron mobility transistor channel, Two-dimensional electron gas channel Channel width starts to narrow.But because the negative voltage of side grid at this time is big not enough, the width of Two-dimensional electron gas channel still compared with Greatly, at this moment if detecting to incident THz wave, the plasma wave in channel still can have as shown in Figure 9 miscellaneous Dissipate mode.And as the minus gate voltage of our side grid is gradually increased (as shown in figure 12), Two-dimensional electron gas channel will continue to narrow, most One-dimensional electric channel is formed afterwards, and at this moment the plasma wave in channel is just only left eigen mode as shown in Figure 10, spuious mould Formula will be eliminated, so that us be facilitated to carry out resonant probe to incident THz wave.
A kind of design of side grid field effect transistor disclosed by the invention, be widely used in include silicon substrate, GaAs base and The field effect transistor terahertz detector of indium phosphide.Field-effect crystalline substance is prepared by dry etching or wet corrosion technique The table top of body pipe；And at least two be located at transistor mesa two sides form Xiao Te with the side surface of transistor mesa The grid of base contact completes device structure design.By this device structure design, (grid can be parallel in the horizontal direction With substrate direction) it is modulated by the electricity of side grid to control the width of transistor device Two-dimensional electron gas channel, while vertical Two-dimensional electron gas is not caused to exhaust (perpendicular to grid and substrate direction) on direction and (keeps the concentration of two-dimensional electron gas and move Shifting rate is constant).So the limitation of energy breakthrough process working ability is modulated by the electricity of bilateral grid, can both be made Transistor device forms nano wire Two-dimensional electron gas channel, and two-dimensional electron gas can be made not influenced by dry etching damage, Keep the high mobility of two-dimensional electron gas.Using side gate transistor structure, it will be able to the spurious mode in channel is greatly reduced, To improve the resonance response characteristic of transistor terahertz detector.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects Describe in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in protection of the invention Within the scope of.

Claims (10)

1. a kind of side grid field effect transistor terahertz detector characterized by comprising
Substrate；
Table top, by by growth on substrate active layer etching after formed, or by growing active layer on substrate after, etching portion It is formed after dividing substrate and active layer；
Grid, setting are located at table top two sides, form Schottky contacts with the table top；
Source electrode and drain electrode, setting are located at the other two sides of table top, form Ohmic contact with the table top.
2. grid field effect transistor terahertz detector in side according to claim 1, it is characterised in that:
The field effect transistor comprises at least one of the following: Metal-Oxide Semiconductor field effect transistor, metal-half Conductor field effect transistor, metal-insulatorsemiconductor field effect transistor, modulation-doped FET, junction field Transistor and high electron mobility field-effect transistor.
3. grid field effect transistor terahertz detector in side according to claim 1, it is characterised in that:
The substrate material are as follows: gallium nitride, GaAs, phosphatization steel, diamond, sapphire, silicon carbide or silicon.
4. grid field effect transistor terahertz detector in side according to claim 1, it is characterised in that:
The table top is relative to substrate protrusion, and the table surface height is more than or equal to active layer thickness.
5. grid field effect transistor terahertz detector in side according to claim 1, it is characterised in that:
The number of the grid is 2 or 2 or more, wherein at least has 2 grids to be located at the two sides of table top.
6. the preparation method of grid field effect transistor terahertz detector in side according to claim 1, it is characterised in that:
The source electrode and drain electrode forms Ohm contact electrode, and the Ohm contact electrode connects with the side surface of the table top Touching, or be in contact with the upper surface of the table top, or be in contact simultaneously with the side surface of the table top and upper surface.
7. the preparation method of side grid field effect transistor terahertz detector, feature exist according to claim 1 or 5 In:
The gate electrode is only in contact with the side surface of table top.
8. grid field effect transistor terahertz detector in side according to claim 1, it is characterised in that:
The material of the grid, source electrode and drain electrode comprises at least one of the following: Ti, Al, Ni, Mo, Pt, Pd, Au, W, TiW and TiN。
9. a kind of preparation method of side grid field effect transistor terahertz detector, comprising:
On substrate by injecting, spreading or be epitaxially-formed active layer；
It etches active layer or active layer and section substrate to form table top；
Ohm contact electrode is prepared at the both ends of table top；
Gate electrode is prepared at the other both ends of table top.
10. the preparation method of grid field effect transistor terahertz detector in side according to claim 9, it is characterised in that:
The height of the table top is more than or equal to the thickness of active layer.
CN201811559379.4A 2018-12-19 2018-12-19 Side grid field effect transistor terahertz detector and preparation method thereof Pending CN109686810A (en)

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CN109991766A (en) * 2019-04-29 2019-07-09 电子科技大学 A kind of high electron mobility transistor terahertz wave modulator loaded in waveguide
CN112670371A (en) * 2020-12-25 2021-04-16 中国科学院半导体研究所 Side gate transistor terahertz detector and preparation method thereof
CN113466166A (en) * 2021-07-08 2021-10-01 清华大学 Gas terahertz spectrum detection system
RU2782707C1 (en) * 2021-11-23 2022-11-01 Общество с ограниченной ответственностью "Терагерцовые оптоэлектронные решения" Terahertz hot electron bolometer

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109991766A (en) * 2019-04-29 2019-07-09 电子科技大学 A kind of high electron mobility transistor terahertz wave modulator loaded in waveguide
CN109991766B (en) * 2019-04-29 2024-01-02 电子科技大学 Terahertz wave modulator with high electron mobility transistor loaded in waveguide
CN112670371A (en) * 2020-12-25 2021-04-16 中国科学院半导体研究所 Side gate transistor terahertz detector and preparation method thereof
CN113466166A (en) * 2021-07-08 2021-10-01 清华大学 Gas terahertz spectrum detection system
RU2782707C1 (en) * 2021-11-23 2022-11-01 Общество с ограниченной ответственностью "Терагерцовые оптоэлектронные решения" Terahertz hot electron bolometer

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