CN107425063A - The GaAs HEMT with heat to electricity conversion function of internet of things oriented - Google Patents
The GaAs HEMT with heat to electricity conversion function of internet of things oriented Download PDFInfo
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- CN107425063A CN107425063A CN201710556123.7A CN201710556123A CN107425063A CN 107425063 A CN107425063 A CN 107425063A CN 201710556123 A CN201710556123 A CN 201710556123A CN 107425063 A CN107425063 A CN 107425063A
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- gaas
- thermocouple
- heat
- metal pole
- hemt
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 97
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 28
- 230000005611 electricity Effects 0.000 title claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 68
- 239000002184 metal Substances 0.000 claims abstract description 68
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 9
- 230000017525 heat dissipation Effects 0.000 claims abstract description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 19
- 238000002161 passivation Methods 0.000 claims description 11
- 238000000605 extraction Methods 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 23
- 238000001514 detection method Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 4
- 230000005678 Seebeck effect Effects 0.000 abstract description 3
- 238000010276 construction Methods 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 239000010931 gold Substances 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
Abstract
The invention discloses a kind of GaAs HEMT with heat to electricity conversion function of internet of things oriented, including：Traditional HEMT source region, grid region, drain region metal electrode layer surrounding, make layer of silicon dioxide layer, be electrically isolated, at the same as making thermocouple reference plane；In silicon dioxide layer, respectively around source electrode, grid and drain electrode 12 thermocouples being made up of thermo-electric metal arm and thermocouple GaAs arm of arrangement, and it is sequentially connected in series by metal connecting line, forms three Thermocouple modules；One end of thermocouple is close to the electrode of place module, electrode of its other end away from place module.The present invention is simple in construction, it is easy to process, energy-conserving and environment-protective, according to Seebeck effect, the heat dissipation problem of HEMT device is effectively alleviated while by realizing that thermoelectric energy is changed around the thermocouple put, and the size of heat-dissipating power can also be detected by Seebeck pressure difference, there is good economical and practical value.
Description
Technical field
The present invention relates to a kind of GaAs based hemts (high electron mobility with heat to electricity conversion function of internet of things oriented
Transistor) device, belong to microelectromechanical systems (MEMS) technical field.
Background technology
Important component of the Internet of Things as generation information revolution, its development have triggered people in Internet of Things
Radio-frequency receiving-transmitting component confesses the concern of power technology.HEMT device is also known as HEMT, is exactly to utilize heterojunction structure
The advantages of middle impurity is separated with electronics in space, electronics obtains high mobility, has very high cut-off frequency and very low
Noise, apply in microwave LNA, power amplification, high speed static random access memory etc. more.
In recent years as the continuous progress of science and technology, thermoelectric generation are just gradually widened its application field, not only existed
In terms of military and high-tech, and good application prospect is also shown at civilian aspect.With the day of energy and environment crisis
Benefit is approached, and scientist increases research dynamics in terms of using low-grade and wasted energy source generating, and part achievement in research has been enter into production
Industry.Thermo-electric generation system is relatively simple, as long as electricity generation module both ends have the temperature difference can constant electric power output.But, it is warm
Poor electricity generation system will solve a subject matter, be how as hot junction heat supply.
Based on thermograde is produced under HEMT device normal work, there is the individual temperature difference than environment temperature, carried for thermo-electric generation
Having supplied may.And thermo-electric generation system effectively make use of the used heat under device work, conversion of the heat energy to electric energy is realized.
Thereby produce the GaAs HEMT with heat to electricity conversion function applied in Internet of Things communication.
The content of the invention
Goal of the invention：In order to overcome the deficiencies in the prior art, the present invention provides a kind of having for internet of things oriented
The GaAs HEMT of heat to electricity conversion function, has the characteristics that simple in construction, easy to process, energy-conserving and environment-protective, using surround
The thermocouple of electrode arrangement, realize the radiating for effectively alleviating HEMT device while thermoelectric energy conversion.
Technical scheme：To achieve the above object, the technical solution adopted by the present invention is：
A kind of GaAs HEMT with heat to electricity conversion function of internet of things oriented, including GaAs based hemts
(HEMT) and some thermocouples；
Wherein, the GaAs based hemts include GaAs (GaAs) substrate, the intrinsic GaAs set gradually from bottom to up
Layer, intrinsic AlGaAs (aluminum gallium arsenide) layer, the N+ type AlGaAs layers of heavy doping, and middle part is provided with grid region on N+ type AlGaAs layers
Metal pole；
Grid region metal pole both sides are disposed with the N+ type GaAs layers of heavy doping on the N+ types AlGaAs layers, respectively as source region
Ohmic contact GaAs poles, drain region Ohmic contact GaAs poles, and extremely upper point of source region Ohmic contact GaAs poles, drain region Ohmic contact GaAs
She Zhi not active area metal pole, drain region metal pole；The source region metal pole, that drain region metal pole bottom is respectively arranged with p-type is heavily doped
Miscellaneous source region and drain region, and source region and drain region are extended in intrinsic GaAs layers from N+ type GaAs layers；
Source region metal pole, grid region metal pole, drain region metal pole surrounding are provided with dioxy on the GaAs based hemts
SiClx passivation layer, to be electrically isolated, the thermocouple is arranged in silicon dioxide passivation layer；Each thermocouple includes setting side by side
The thermo-electric metal arm and thermocouple GaAs arm put, pass through gold between adjacent thermo-electric metal arm and thermocouple GaAs arm
Category line is sequentially connected in series.
Further, thermal source is provided for thermocouple by the Temperature Distribution on GaAs based hemts, is realized by thermocouple
Thermoelectric energy realizes the radiating of GaAs based hemts, easy to process and energy-conserving and environment-protective while conversion.
Further, the thermocouple respectively around source region metal pole, grid region metal pole, drain region metal pole arrangement and successively
Series connection, form three Thermocouple modules；One end of the thermocouple is close to the electrode of place module, and to contact thermal source, its is another
Electrode of the end away from place module, with remote thermal source, so as to realize the thermo-electric generation of stability and high efficiency.
Further, each Thermocouple module is provided with two thermocouple extraction poles, and three Thermocouple modules pass through gold
Category line is sequentially connected in series, and leaves output stage of two extraction poles as Seebeck pressure difference.Electromotive force is equal to each caused by so
Thermocouple module sum, the size of heat-dissipating power is detected further according to the electromotive force of measurement.
Temperature Distribution when further, for HEMT normal works, each Thermocouple module surround place including 12
The electrode arrangement of module and the thermocouple being sequentially connected in series, heat to electricity conversion is realized according to Seebeck effect, thermocouple of connecting is then favourable
In increasing exponentially for Seebeck pressure difference.
Further, the size of the temperature difference is detected by detecting Seebeck pressure difference caused by three Thermocouple modules, from
And the heat-dissipating power on GaAs based hemts is detected, it is easy to use and be easily achieved.
Beneficial effect：A kind of GaAs based hemts device with heat to electricity conversion function of internet of things oriented provided by the invention
Part, relative to prior art, there is advantages below：1st, it is simple in construction, based on existing GaAs techniques and MEMS surface micros
Processing, it is easy to accomplish, there is the advantages of cut-off frequency is high, operating rate is fast, short-channel effect is small and noiseproof feature is good；2nd, it is based on
Temperature Distribution on HEMT, a series of thermocouples are arranged, HEMT device is effectively alleviated while realizing thermoelectric energy conversion
Heat dissipation problem, and detect by Seebeck pressure difference the size of heat-dissipating power when HEMT device works in real time, have good
Economical and practical value.
Brief description of the drawings
Fig. 1 is the top view of the GaAs HEMT with heat to electricity conversion function of internet of things oriented in the present invention；
Fig. 2 be the present invention in internet of things oriented the GaAs HEMT with heat to electricity conversion function along P-P ' to
Profile；
Fig. 3 be the present invention in internet of things oriented the GaAs HEMT with heat to electricity conversion function along Q-Q ' to
Profile；
Fig. 4 be the present invention in internet of things oriented the GaAs HEMT with heat to electricity conversion function along R-R ' to
Profile；
Fig. 5 be the present invention in internet of things oriented the GaAs HEMT with heat to electricity conversion function along S-S ' to
Profile；
Fig. 6 is thermocouple mould on the GaAs HEMT with heat to electricity conversion function of internet of things oriented in the present invention
Thermocouple distribution map in block；
Figure includes：1st, GaAs (GaAs) substrate, 2, intrinsic GaAs layers, 3, intrinsic AlGaAs (aluminum gallium arsenide) layer, 4, N
+ type AlGaAs layers, 5, source region Ohmic contact GaAs poles, 6, drain region Ohmic contact GaAs poles, 7, grid region metal pole, 8, thermocouple gold
Belong to arm, 9, thermocouple GaAs arm, 10, metal connecting line, 11, silicon dioxide passivation layer, 12, source region, 13, drain region, 14, source region gold
Belong to pole, 15, drain region metal pole, 16, Thermocouple module, 17, metallic vias, 18, thermocouple extraction pole.
Embodiment
The present invention is further described below in conjunction with the accompanying drawings.
It is a kind of GaAs HEMT with heat to electricity conversion function of internet of things oriented as Figure 1-5, including
GaAs based hemts and some thermocouples；
Wherein, it is the GaAs based hemts include setting gradually from bottom to up GaAs substrates 1, intrinsic GaAs layers 2, intrinsic
AlGaAs layers 3, the N+ type AlGaAs layers 4 of heavy doping, and middle part is provided with grid region metal pole 7 on N+ type AlGaAs layers 4；
The both sides of grid region metal pole 7 are disposed with the N+ type GaAs layers of heavy doping on the N+ types AlGaAs layers 4, respectively as source
Area Ohmic contact GaAs poles 5, drain region Ohmic contact GaAs poles 6, and source region Ohmic contact GaAs poles 5, drain region Ohmic contact GaAs
Source region metal pole 14, drain region metal pole 15 are respectively arranged with pole 6；The source region metal pole 14, the bottom of drain region metal pole 15 point
Source region 12 and the drain region 13 of p-type heavy doping are not provided with, and source region 12 and drain region 13 extend to intrinsic GaAs from N+ type GaAs layers
In layer 2；
It is provided with the GaAs based hemts around source region metal pole 14, grid region metal pole 7, the surrounding of drain region metal pole 15
Silicon dioxide passivation layer 11, to be electrically isolated, the thermocouple is arranged in silicon dioxide passivation layer 11；Each thermocouple bag
Include the thermo-electric metal arm 8 being set up in parallel and thermocouple GaAs arm 9, adjacent thermo-electric metal arm 8 and thermocouple GaAs
It is sequentially connected in series between arm 9 by metal connecting line 10.
As shown in fig. 6, the thermocouple arranges around source region metal pole 14, grid region metal pole 7, drain region metal pole 15 respectively
And be sequentially connected in series, form three Thermocouple modules 16；The thermocouple is arranged perpendicular to the edge of the electrode of place module, is passed through
Temperature Distribution on GaAs based hemts provides thermal source for thermocouple, is realized while realizing that thermoelectric energy is changed by thermocouple
The radiating of GaAs based hemts.
In the present embodiment, each Thermocouple module 16 includes the thermocouple and two thermocouple extraction poles 18 of 12 series connection,
And three Thermocouple modules 16 are sequentially connected in series by metal connecting line 10, output of two extraction poles 18 as Seebeck pressure difference is left
Pole, and then detect heat dissipation work(on GaAs based hemts by detecting Seebeck pressure difference caused by three Thermocouple modules 16
The size of rate.
The preparation method of the GaAs HEMT with heat to electricity conversion function of the internet of things oriented, including it is following
Step：
S1：Molecular beam epitaxial growth a layer thickness is 60nm intrinsic GaAs layers 2 on semi-insulated GaAs substrates 1；
S2：In the intrinsic AlGaAs layers 3 that intrinsic Epitaxial growth a layer thickness of GaAs layers 2 is 20nm；
S3：In the N+ type AlGaAs layers 4 that intrinsic Epitaxial growth a layer thickness of AlGaAs layers 3 is 20nm, doping concentration is
1.0E18cm-3, control thickness and doping concentration so that HEMT pipes are enhanced；
S4：It is 3.5E18cm in N+ type AlGaAs layer 4 Epitaxial growth, one layer of doping concentration-3N+ type GaAs layers, table top
Corrosion isolation active area, obtains source region Ohmic contact GaAs poles 5, drain region Ohmic contact GaAs poles 6；
S5：One layer of silicon nitride layer is grown on N+ type GaAs layers, photoetching silicon nitride layer, carves source and drain areas, carries out phosphorus (P)
Ion implanting, doping concentration 3.5E18cm-3, source region 12 and the drain region 13 of p-type heavy doping are formed, removes silicon nitride；
S6：Photoresist is coated on N+ type GaAs layers, photoetching removes the photoresist of electrode contact locations, is evaporated in vacuo gold germanium
Peeled off after ni au, alloying forms Ohmic contact, obtains source region metal pole 14 and drain region metal pole 15；
S7：Photoresist is coated on N+ type AlGaAs layers 4, photoetching removes the photoresist of gate location, grows a layer thickness
0.5um Ti/Pt/Au, the metal on photoresist and photoresist is removed, form the grid region metal pole 7 of Schottky contacts；
S8：The thick SO of one layer of 0.2um are grown around source region metal pole 14, grid region metal pole 7, the surrounding of drain region metal pole 152
Passivation layer 11, and it is chemically-mechanicapolish polished, as the reference plane for making thermocouple；
S9：In SO2Photoresist is coated on passivation layer 11, removes the photoresist of the position of thermocouple GaAs arm 9, and extension is given birth to
Long one layer of doping concentration is 1.0E17cm-3N+ p type gallium arensideps, N+ GaAs is anti-carved according to the shape of thermocouple GaAs arm 9,
Form thermocouple GaAs arm 9；
S10：Remove SO2The photoresist of the position of thermo-electric metal arm 8 on passivation layer 11, and gold germanium ni au is sputtered as heat
Galvanic couple metal arm 8, the thermo-electric metal arm 8 that thickness is 270nm is obtained after stripping；
S11：Photoresist is coated, the thick metal levels of one layer of 0.3um is evaporated and is used as connection thermocouple GaAs arm 9 and thermocouple
The metal connecting line 10 of metal arm 8, photoresist is removed, two thermocouple extraction poles 18 are left in each Thermocouple module 16；
S12：As shown in figure 5, one layer of SO is grown on the thermocouple extraction pole 18 of grid region Thermocouple module2Passivation layer
11, it is chemically-mechanicapolish polished, and metallic vias 17 is done in the position of thermocouple extraction pole 18, deposit metallic gold leads to N+
Type GaAs layer horizontal planes；As shown in figure 1, thermocouple extraction pole 18 is attached by depositing one layer of gold, leave two electrodes
Output stage as Seebeck pressure difference.
The GaAs HEMT with heat to electricity conversion function of the internet of things oriented of the present invention, connected with 36
Thermocouple.Traditional HEMT source region, grid region, drain region metal electrode layer surrounding, make layer of silicon dioxide layer, carry out electricity every
From, while as the reference plane for making thermocouple；Face on silica, 36 are made by thermoelectricity according to the pattern shown in Fig. 6
The thermocouple of even metal arm and thermocouple GaAs arm composition, is connected with metal connecting line.The present invention according to Seebeck effect,
Put with 36 thermocouples around source electrode, grid and drain electrode, realize that thermoelectric energy is changed, alleviated while realizing collection of energy
Heat dissipation problem, and the size of heat-dissipating power in HEMT device can also be detected by Seebeck pressure difference.
Described above is only the preferred embodiment of the present invention, it should be pointed out that：For the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (6)
1. the GaAs HEMT with heat to electricity conversion function of a kind of internet of things oriented, it is characterised in that including arsenic
Gallium based hemts and some thermocouples；
Wherein, it is the GaAs based hemts include setting gradually from bottom to up GaAs substrates (1), intrinsic GaAs layers (2), intrinsic
AlGaAs layers (3), the N+ type AlGaAs layers (4) of heavy doping, and middle part is provided with grid region metal pole on N+ type AlGaAs layers (4)
(7)；
Grid region metal pole (7) both sides are disposed with the N+ type GaAs layers of heavy doping on the N+ types AlGaAs layers (4), respectively as source
Area Ohmic contact GaAs poles (5), drain region Ohmic contact GaAs poles (6), and source region Ohmic contact GaAs poles (5), drain region ohm connect
Touch and be respectively arranged with source region metal pole (14), drain region metal pole (15) on GaAs poles (6)；The source region metal pole (14), drain region
Metal pole (15) bottom is respectively arranged with source region (12) and drain region (13) of p-type heavy doping, and source region (12) and drain region (13) are from N
+ type GaAs layers are extended in intrinsic GaAs layers (2)；
Set on the GaAs based hemts around source region metal pole (14), grid region metal pole (7), drain region metal pole (15) surrounding
There is silicon dioxide passivation layer (11), the thermocouple is arranged in silicon dioxide passivation layer (11)；Each thermocouple includes arranged side by side
The thermo-electric metal arm (8) and thermocouple GaAs arm (9) of setting, adjacent thermo-electric metal arm (8) and thermocouple GaAs
It is sequentially connected in series between arm (9) by metal connecting line (10).
2. the GaAs HEMT with heat to electricity conversion function of internet of things oriented according to claim 1, it is special
Sign is, thermal source is provided for thermocouple by the Temperature Distribution on GaAs based hemts, realizes that thermoelectric energy turns by thermocouple
The radiating of GaAs based hemts is realized while changing.
3. the GaAs HEMT with heat to electricity conversion function of internet of things oriented according to claim 2, it is special
Sign is, the thermocouple respectively around source region metal pole (14), grid region metal pole (7), drain region metal pole (15) arrangement and according to
Secondary series connection, form three Thermocouple modules (16)；Close to the electrode of place module, its other end is remote for one end of the thermocouple
The electrode of place module.
4. the GaAs HEMT with heat to electricity conversion function of internet of things oriented according to claim 3, it is special
Sign is that each Thermocouple module (16) is provided with two thermocouple extraction poles (18), and three Thermocouple modules (16) pass through
Metal connecting line (10) is sequentially connected in series.
5. the GaAs HEMT with heat to electricity conversion function of internet of things oriented according to claim 4, it is special
Sign is that each Thermocouple module (16) includes the thermocouple of 12 series connection.
6. the GaAs HEMT with heat to electricity conversion function of internet of things oriented according to claim 4, it is special
Sign is, heat dissipation on GaAs based hemts is realized by detecting Seebeck pressure difference caused by three Thermocouple modules (16)
The detection of power.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710556123.7A CN107425063B (en) | 2017-07-10 | 2017-07-10 | Gallium arsenide-based HEMT device with thermoelectric conversion function and oriented to Internet of things |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710556123.7A CN107425063B (en) | 2017-07-10 | 2017-07-10 | Gallium arsenide-based HEMT device with thermoelectric conversion function and oriented to Internet of things |
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| Publication Number | Publication Date |
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| CN107425063A true CN107425063A (en) | 2017-12-01 |
| CN107425063B CN107425063B (en) | 2020-04-24 |
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| CN201710556123.7A Active CN107425063B (en) | 2017-07-10 | 2017-07-10 | Gallium arsenide-based HEMT device with thermoelectric conversion function and oriented to Internet of things |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109037062A (en) * | 2018-06-28 | 2018-12-18 | 杭州电子科技大学 | A kind of III-V HEMT device with thermo-electric generation mechanism |
| CN109037063A (en) * | 2018-06-28 | 2018-12-18 | 杭州电子科技大学 | The preparation method of III-VHEMT device with thermo-electric generation mechanism |
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| US5665176A (en) * | 1993-07-30 | 1997-09-09 | Nissan Motor Co., Ltd. | n-Type thermoelectric materials |
| CN1591904A (en) * | 2003-09-05 | 2005-03-09 | 株式会社瑞萨科技 | Semiconductor device and a method of manufacturing the same |
| CN101834202A (en) * | 2010-04-13 | 2010-09-15 | 东南大学 | N-type lateral insulated gate bipolar device capable of reducing hot carrier effect |
| US20160086985A1 (en) * | 2014-09-22 | 2016-03-24 | Samsung Electronics Co., Ltd. | Pixel for cmos image sensor and image sensor including the same |
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2017
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|---|---|---|---|---|
| US5665176A (en) * | 1993-07-30 | 1997-09-09 | Nissan Motor Co., Ltd. | n-Type thermoelectric materials |
| CN1591904A (en) * | 2003-09-05 | 2005-03-09 | 株式会社瑞萨科技 | Semiconductor device and a method of manufacturing the same |
| CN101834202A (en) * | 2010-04-13 | 2010-09-15 | 东南大学 | N-type lateral insulated gate bipolar device capable of reducing hot carrier effect |
| US20160086985A1 (en) * | 2014-09-22 | 2016-03-24 | Samsung Electronics Co., Ltd. | Pixel for cmos image sensor and image sensor including the same |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109037062A (en) * | 2018-06-28 | 2018-12-18 | 杭州电子科技大学 | A kind of III-V HEMT device with thermo-electric generation mechanism |
| CN109037063A (en) * | 2018-06-28 | 2018-12-18 | 杭州电子科技大学 | The preparation method of III-VHEMT device with thermo-electric generation mechanism |
| CN109037063B (en) * | 2018-06-28 | 2021-03-30 | 杭州电子科技大学 | Preparation method of III-VHEMT device with thermoelectric generation mechanism |
| CN109037062B (en) * | 2018-06-28 | 2021-06-15 | 杭州电子科技大学 | III-V HEMT device with thermoelectric generation mechanism |
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| CN107425063B (en) | 2020-04-24 |
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