CN107425063B - Gallium arsenide-based HEMT device with thermoelectric conversion function and oriented to Internet of things - Google Patents
Gallium arsenide-based HEMT device with thermoelectric conversion function and oriented to Internet of things Download PDFInfo
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 98
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 98
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 78
- 239000002184 metal Substances 0.000 claims abstract description 78
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 230000017525 heat dissipation Effects 0.000 claims abstract description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 13
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 13
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 18
- 238000002161 passivation Methods 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 6
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- 238000005516 engineering process Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- MBGCACIOPCILDG-UHFFFAOYSA-N [Ni].[Ge].[Au] Chemical compound [Ni].[Ge].[Au] MBGCACIOPCILDG-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
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- 238000001704 evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
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Abstract
The invention discloses a gallium arsenide-based HEMT device with thermoelectric conversion function and oriented to the Internet of things, which comprises: manufacturing a silicon dioxide layer around metal electrode layers of a source region, a gate region and a drain region of the traditional HEMT, performing electric isolation, and simultaneously using the silicon dioxide layer as a reference surface for manufacturing a thermocouple; on the silicon dioxide layer, 12 thermocouples consisting of thermocouple metal arms and thermocouple gallium arsenide arms are respectively arranged around the source electrode, the grid electrode and the drain electrode and are sequentially connected in series through metal connecting wires to form three thermocouple modules; one end of the thermocouple is close to the electrode of the module, and the other end of the thermocouple is far away from the electrode of the module. The invention has simple structure, convenient processing, energy saving and environmental protection, realizes thermoelectric energy conversion by the thermocouples arranged around the periphery according to the Seebeck effect, effectively relieves the heat dissipation problem of the HEMT device, can detect the heat dissipation power by the Seebeck pressure difference, and has good economic and practical values.
Description
Technical Field
The invention relates to a gallium arsenide-based HEMT (high Electron mobility transistor) device with a thermoelectric conversion function and oriented to the Internet of things, and belongs to the technical field of micro-electro-mechanical systems (MEMS).
Background
The development of the internet of things as an important component of a new generation of information revolution has led to the attention of people to the self-powered technology of the radio frequency transceiver in the internet of things. HEMT devices are also called high electron mobility transistors, which utilize the advantage that impurities and electrons in a heterostructure are spatially separated, so that electrons have extremely high mobility, very high cut-off frequency and very low noise, and are often used in microwave low noise amplifiers, power amplifiers, high speed static random access memories and the like.
With the continuous progress of scientific technology in recent years, the thermoelectric power generation technology is gradually widening the application field, and the thermoelectric power generation technology has good application prospect not only in the aspects of military affairs and high technology, but also in the aspect of civil use. With the increasing approach of energy and environmental crisis, scientists have increased research strength in the aspect of generating electricity by utilizing low grade and waste energy, and partial research results have already entered industrialization. The temperature difference power generation system is simple, and continuous power output can be realized as long as the temperature difference exists between the two ends of the power generation module. However, the thermoelectric power generation system has to solve a main problem, namely how to supply heat to the hot end.
Based on the temperature gradient generated by normal work of the HEMT device, the HEMT device has a temperature difference compared with the ambient temperature, and the possibility of temperature difference power generation is provided. The thermoelectric power generation system effectively utilizes waste heat generated by the devices during working, and conversion from heat energy to electric energy is realized. Therefore, the gallium arsenide-based HEMT device with the thermoelectric conversion function applied to the communication of the Internet of things is generated.
Disclosure of Invention
The purpose of the invention is as follows: in order to overcome the defects in the prior art, the invention provides the gallium arsenide-based HEMT device with the thermoelectric conversion function and oriented to the Internet of things, which has the characteristics of simple structure, convenience in processing, energy conservation, environmental protection and the like, and the thermoelectric energy conversion is realized and the heat dissipation of the HEMT device is effectively relieved at the same time by utilizing the thermocouples arranged around the electrodes.
The technical scheme is as follows: in order to achieve the purpose, the invention adopts the technical scheme that:
a gallium arsenide-based HEMT device with thermoelectric conversion function facing to the Internet of things comprises a gallium arsenide-based HEMT (high electron mobility transistor) and a plurality of thermocouples;
the gallium arsenide-based HEMT comprises a GaAs (gallium arsenide) substrate, an intrinsic GaAs layer, an intrinsic AlGaAs (aluminum gallium arsenide) layer and a heavily doped N + type AlGaAs layer which are arranged from bottom to top in sequence, wherein a gate region metal electrode is arranged in the middle of the upper part of the N + type AlGaAs layer;
heavily doped N + type GaAs layers are arranged on two sides of a gate region metal pole on the N + type AlGaAs layer and are respectively used as a source region ohmic contact GaAs pole and a drain region ohmic contact GaAs pole, and the source region ohmic contact GaAs pole and the drain region ohmic contact GaAs pole are respectively provided with a source region metal pole and a drain region metal pole; the bottom parts of the source region metal pole and the drain region metal pole are respectively provided with a P-type heavily doped source region and a drain region, and the source region and the drain region extend from the N + type GaAs layer to the intrinsic GaAs layer;
a silicon dioxide passivation layer is arranged on the gallium arsenide-based HEMT around the source region metal electrode, the gate region metal electrode and the drain region metal electrode for electrical isolation, and the thermocouple is arranged on the silicon dioxide passivation layer; each thermocouple comprises a thermocouple metal arm and a thermocouple gallium arsenide arm which are arranged in parallel, and the adjacent thermocouple metal arms and the thermocouple gallium arsenide arms are sequentially connected in series through metal connecting wires.
Furthermore, a heat source is provided for the thermocouple through the temperature distribution on the gallium arsenide-based HEMT, the heat dissipation of the gallium arsenide-based HEMT is realized while the thermoelectric energy conversion is realized through the thermocouple, and the gallium arsenide-based HEMT is convenient to process, energy-saving and environment-friendly.
Furthermore, the thermocouples are respectively arranged around the source region metal electrode, the gate region metal electrode and the drain region metal electrode and are sequentially connected in series to form three thermocouple modules; one end of the thermocouple is close to the electrode of the module to contact the heat source, and the other end of the thermocouple is far away from the electrode of the module to be far away from the heat source, so that stable and efficient thermoelectric power generation is realized.
Furthermore, each thermocouple module is provided with two thermocouple leading-out electrodes, and the three thermocouple modules are sequentially connected in series through a metal connecting wire, and the two leading-out electrodes are reserved as output electrodes of the Seebeck pressure difference. The electromotive force thus generated is equal to the sum of the respective thermocouple modules, and the magnitude of the heat dissipation power is detected based on the measured electromotive force.
Further, each thermocouple module comprises 12 thermocouples which are arranged around the electrode of the module and are sequentially connected in series according to the temperature distribution of the HEMT in normal work, thermoelectric conversion is realized according to the Seebeck effect, and the series-connection thermocouples are beneficial to multiplying the Seebeck pressure difference.
Furthermore, the size of the temperature difference is detected by detecting the Seebeck pressure difference generated by the three thermocouple modules, so that the heat dissipation power on the gallium arsenide-based HEMT is detected, and the heat dissipation power detection device is convenient to use and easy to realize.
Has the advantages that: compared with the prior art, the gallium arsenide-based HEMT device with the thermoelectric conversion function and oriented to the Internet of things has the following advantages: 1. the structure is simple, the method is easy to realize based on the existing GaAs process and MEMS surface micromachining, and has the advantages of high cut-off frequency, high working speed, small short channel effect and good noise performance; 2. based on the temperature distribution on the HEMT, a series of thermocouples are arranged, the heat dissipation problem of the HEMT device is effectively relieved while thermoelectric energy conversion is realized, the heat dissipation power of the HEMT device during working is detected in real time through the Seebeck pressure difference, and the HEMT device has good economic and practical values.
Drawings
Fig. 1 is a top view of a gallium arsenide-based HEMT device with a thermoelectric conversion function according to the present invention;
FIG. 2 is a cross-sectional view of the GaAs-based HEMT device with thermoelectric conversion function facing the Internet of things along the direction P-P' in the invention;
FIG. 3 is a cross-sectional view along the direction Q-Q' of the GaAs-based HEMT device with thermoelectric conversion function facing the Internet of things in the present invention;
FIG. 4 is a cross-sectional view of the GaAs-based HEMT device with thermoelectric conversion function facing the Internet of things along the direction R-R' in the invention;
FIG. 5 is a cross-sectional view of the GaAs-based HEMT device with thermoelectric conversion function facing the Internet of things along the S-S' direction;
FIG. 6 is a diagram of thermocouple distribution in a thermocouple module on an IOT-oriented GaAs-based HEMT device with thermoelectric conversion function according to the present invention;
the figure includes: 1. the semiconductor device comprises a GaAs (gallium arsenide) substrate, 2, an intrinsic GaAs layer, 3, an intrinsic AlGaAs (aluminum gallium arsenide) layer, 4, an N + type AlGaAs layer, 5, a source region ohmic contact GaAs electrode, 6, a drain region ohmic contact GaAs electrode, 7, a gate region metal electrode, 8, a thermocouple metal arm, 9, a thermocouple gallium arsenide arm, 10, a metal connecting wire, 11, a silicon dioxide passivation layer, 12, a source region, 13, a drain region, 14, a source region metal electrode, 15, a drain region metal electrode, 16, a thermocouple module, 17, a metal through hole, 18 and a thermocouple leading-out electrode.
Detailed Description
The present invention will be further described with reference to the accompanying drawings.
As shown in fig. 1-5, an internet of things-oriented gallium arsenide-based HEMT device with thermoelectric conversion function includes a gallium arsenide-based HEMT and a plurality of thermocouples;
the gallium arsenide-based HEMT comprises a GaAs substrate 1, an intrinsic GaAs layer 2, an intrinsic AlGaAs layer 3 and a heavily doped N + type AlGaAs layer 4 which are sequentially arranged from bottom to top, and a gate region metal electrode 7 is arranged at the upper middle part of the N + type AlGaAs layer 4;
heavily doped N + type GaAs layers are arranged on two sides of a gate region metal electrode 7 on the N + type AlGaAs layer 4 and are respectively used as a source region ohmic contact GaAs electrode 5 and a drain region ohmic contact GaAs electrode 6, and a source region metal electrode 14 and a drain region metal electrode 15 are respectively arranged on the source region ohmic contact GaAs electrode 5 and the drain region ohmic contact GaAs electrode 6; the bottom parts of the source region metal electrode 14 and the drain region metal electrode 15 are respectively provided with a P-type heavily doped source region 12 and a drain region 13, and the source region 12 and the drain region 13 extend from the N + type GaAs layer to the intrinsic GaAs layer 2;
a silicon dioxide passivation layer 11 is arranged on the gallium arsenide-based HEMT around the source region metal electrode 14, the gate region metal electrode 7 and the drain region metal electrode 15 for electrical isolation, and the thermocouple is arranged on the silicon dioxide passivation layer 11; each thermocouple comprises a thermocouple metal arm 8 and a thermocouple gallium arsenide arm 9 which are arranged in parallel, and the adjacent thermocouple metal arms 8 and the thermocouple gallium arsenide arms 9 are sequentially connected in series through metal connecting wires 10.
As shown in fig. 6, the thermocouples are respectively arranged around the source region metal electrode 14, the gate region metal electrode 7, and the drain region metal electrode 15 and are sequentially connected in series to form three thermocouple modules 16; the thermocouple is arranged perpendicular to the edge of the electrode of the module, a heat source is provided for the thermocouple through temperature distribution on the gallium arsenide-based HEMT, thermoelectric energy conversion is achieved through the thermocouple, and meanwhile heat dissipation of the gallium arsenide-based HEMT is achieved.
In this embodiment, each thermocouple module 16 includes 12 thermocouples connected in series and two thermocouple extraction electrodes 18, and the three thermocouple modules 16 are connected in series in sequence through the metal connection line 10, leaving the two extraction electrodes 18 as output electrodes of the seebeck voltage difference, and then detecting the size of the heat dissipation power on the gaas-based HEMT by detecting the seebeck voltage difference generated by the three thermocouple modules 16.
The preparation method of the gallium arsenide-based HEMT device with the thermoelectric conversion function facing the Internet of things comprises the following steps:
s1: a molecular beam epitaxy growth layer of intrinsic GaAs 2 with the thickness of 60nm is formed on a semi-insulating GaAs substrate 1;
s2: epitaxially growing an intrinsic AlGaAs layer 3 with a thickness of 20nm on the intrinsic GaAs layer 2;
s3: epitaxially growing a layer of N + type AlGa with a thickness of 20nm on the intrinsic AlGaAs layer 3As layer 4 with doping concentration of 1.0E18cm-3Controlling the thickness and the doping concentration to enable the HEMT tube to be enhanced;
s4: epitaxially growing a layer with a doping concentration of 3.5E18cm on the N + type AlGaAs layer 4-3The table top of the N + type GaAs layer is corroded to isolate the active region, and a source region ohmic contact GaAs electrode 5 and a drain region ohmic contact GaAs electrode 6 are obtained;
s5: growing a silicon nitride layer on the N + type GaAs layer, photoetching the silicon nitride layer, etching source and drain regions, and implanting phosphorus (P) ions with a doping concentration of 3.5E18cm-3Forming a P-type heavily doped source region 12 and a drain region 13, and removing silicon nitride;
s6: coating photoresist on the N + type GaAs layer, removing the photoresist at the electrode contact position by photoetching, stripping after vacuum evaporation of gold, germanium, nickel and gold, and alloying to form ohmic contact to obtain a source region metal electrode 14 and a drain region metal electrode 15;
s7: coating photoresist on the N + type AlGaAs layer 4, removing the photoresist at the position of the grid electrode by photoetching, growing a layer of Ti/Pt/Au with the thickness of 0.5um, removing the photoresist and metal on the photoresist, and forming a grid region metal electrode 7 with Schottky contact;
s8: a layer of SO with the thickness of 0.2um grows around the metal electrode 14 of the source region, the metal electrode 7 of the grid region and the metal electrode 15 of the drain region2Passivating layer 11, and carrying out chemical mechanical polishing on it to be used as a reference surface for manufacturing a thermocouple;
s9: in SO2Coating photoresist on the passivation layer 11, removing the photoresist at the position of the thermocouple gallium arsenide arm 9, and epitaxially growing a layer with the doping concentration of 1.0E17cm-3The N + type gallium arsenide is reversely etched according to the shape of the thermocouple gallium arsenide arm 9 to form the thermocouple gallium arsenide arm 9;
s10: removal of SO2Photoresist at the position of the thermocouple metal arm 8 on the passivation layer 11, sputtering gold-germanium-nickel/gold as the thermocouple metal arm 8, and stripping to obtain the thermocouple metal arm 8 with the thickness of 270 nm;
s11: coating photoresist, evaporating a layer of metal layer with the thickness of 0.3um to be used as a metal connecting wire 10 for connecting a thermocouple gallium arsenide arm 9 and a thermocouple metal arm 8, removing the photoresist, and leaving two thermocouple leading-out electrodes 18 in each thermocouple module 16;
s12: as shown in FIG. 5, a layer of SO is grown on the thermocouple extraction electrode 18 of the grid thermocouple block2The passivation layer 11 is subjected to chemical mechanical polishing, a metal through hole 17 is formed in the position of a thermocouple leading-out electrode 18, and deposited metal gold is led out to the horizontal plane of the N + type GaAs layer; the thermocouple extraction electrodes 18 are connected by depositing a layer of gold, leaving the two electrodes as output electrodes for the seebeck differential pressure, as shown in figure 1.
The gallium arsenide-based HEMT device with the thermoelectric conversion function, which is oriented to the Internet of things, is provided with 36 thermocouples which are connected in series. Manufacturing a silicon dioxide layer around metal electrode layers of a source region, a gate region and a drain region of the traditional HEMT, performing electric isolation, and simultaneously using the silicon dioxide layer as a reference surface for manufacturing a thermocouple; on top of the silicon dioxide, 36 thermocouples consisting of thermocouple metal arms and thermocouple gallium arsenide arms were fabricated in the pattern shown in fig. 6 and connected in series with metal wires. According to the invention, 36 thermocouples are arranged around the source electrode, the grid electrode and the drain electrode according to the Seebeck effect, thermoelectric energy conversion is realized, the energy collection is realized, the heat dissipation problem is relieved, and the magnitude of heat dissipation power on the HEMT device can be detected through the Seebeck pressure difference.
The above description is only of the preferred embodiments of the present invention, and it should be noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the invention and these are intended to be within the scope of the invention.
Claims (6)
1. A gallium arsenide-based HEMT device with thermoelectric conversion function facing to the Internet of things is characterized by comprising a gallium arsenide-based HEMT and a plurality of thermocouples;
the gallium arsenide-based HEMT comprises a GaAs substrate (1), an intrinsic GaAs layer (2), an intrinsic AlGaAs layer (3) and a heavily doped N + type AlGaAs layer (4) which are sequentially arranged from bottom to top, wherein a gate region metal electrode (7) is arranged in the middle of the upper portion of the N + type AlGaAs layer (4);
heavily doped N + type GaAs layers are arranged on two sides of a gate region metal pole (7) on the N + type AlGaAs layer (4) and are respectively used as a source region ohmic contact GaAs pole (5) and a drain region ohmic contact GaAs pole (6), and a source region metal pole (14) and a drain region metal pole (15) are respectively arranged on the source region ohmic contact GaAs pole (5) and the drain region ohmic contact GaAs pole (6); the bottom parts of the source region metal pole (14) and the drain region metal pole (15) are respectively provided with a P-type heavily doped source region (12) and a drain region (13), and the source region (12) and the drain region (13) extend into the intrinsic GaAs layer (2) from the N + type GaAs layer;
silicon dioxide passivation layers (11) are arranged on the gallium arsenide-based HEMT around the source region metal electrode (14), the gate region metal electrode (7) and the drain region metal electrode (15), and the thermocouples are arranged on the silicon dioxide passivation layers (11) around the source region metal electrode (14), the gate region metal electrode (7) and the drain region metal electrode (15) respectively; each thermocouple comprises a thermocouple metal arm (8) and a thermocouple gallium arsenide arm (9) which are arranged in parallel, and the adjacent thermocouple metal arms (8) and the thermocouple gallium arsenide arms (9) are sequentially connected in series through metal connecting wires (10).
2. The internet-of-things-oriented gallium arsenide-based HEMT device with thermoelectric conversion function according to claim 1, wherein a heat source is provided for the thermocouple through temperature distribution on the gallium arsenide-based HEMT, and the heat dissipation of the gallium arsenide-based HEMT is realized while thermoelectric energy conversion is realized through the thermocouple.
3. The internet-of-things-oriented gallium arsenide-based HEMT device with thermoelectric conversion function according to claim 2, wherein said thermocouples are arranged around the source region metal electrode (14), the gate region metal electrode (7), and the drain region metal electrode (15) respectively and connected in series in turn to form three thermocouple modules (16); one end of the thermocouple is close to the electrode of the module, and the other end of the thermocouple is far away from the electrode of the module.
4. The internet-of-things-oriented gallium arsenide-based HEMT device with thermoelectric conversion function according to claim 3, wherein each thermocouple module (16) is provided with two thermocouple extraction electrodes (18), and three thermocouple modules (16) are connected in series in turn by a metal wire (10).
5. The internet-of-things-oriented gallium arsenide based HEMT device with thermoelectric conversion function according to claim 4, wherein each thermocouple module (16) comprises 12 thermocouples in series.
6. The internet-of-things-oriented gallium arsenide based HEMT device with thermoelectric conversion function according to claim 4, wherein the detection of the heat dissipation power on the gallium arsenide based HEMT is achieved by detecting the seebeck voltage difference generated by the three thermocouple modules (16).
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5665176A (en) * | 1993-07-30 | 1997-09-09 | Nissan Motor Co., Ltd. | n-Type thermoelectric materials |
| CN1591904A (en) * | 2003-09-05 | 2005-03-09 | 株式会社瑞萨科技 | Semiconductor device and a method of manufacturing the same |
| CN101834202A (en) * | 2010-04-13 | 2010-09-15 | 东南大学 | N-type lateral insulated gate bipolar device capable of reducing hot carrier effect |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5665176A (en) * | 1993-07-30 | 1997-09-09 | Nissan Motor Co., Ltd. | n-Type thermoelectric materials |
| CN1591904A (en) * | 2003-09-05 | 2005-03-09 | 株式会社瑞萨科技 | Semiconductor device and a method of manufacturing the same |
| CN101834202A (en) * | 2010-04-13 | 2010-09-15 | 东南大学 | N-type lateral insulated gate bipolar device capable of reducing hot carrier effect |
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