CN107293584A - The GaAs base HBT devices with heat to electricity conversion function of internet of things oriented - Google Patents
The GaAs base HBT devices with heat to electricity conversion function of internet of things oriented Download PDFInfo
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- CN107293584A CN107293584A CN201710556424.XA CN201710556424A CN107293584A CN 107293584 A CN107293584 A CN 107293584A CN 201710556424 A CN201710556424 A CN 201710556424A CN 107293584 A CN107293584 A CN 107293584A
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 75
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 29
- 230000005611 electricity Effects 0.000 title claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 10
- 230000017525 heat dissipation Effects 0.000 claims abstract description 6
- 238000001514 detection method Methods 0.000 claims abstract description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 74
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 26
- 229910052733 gallium Inorganic materials 0.000 claims description 26
- 238000000605 extraction Methods 0.000 claims description 17
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 11
- 238000002161 passivation Methods 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 5
- 230000005678 Seebeck effect Effects 0.000 abstract description 4
- 238000010276 construction Methods 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 230000008859 change Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000005619 thermoelectricity Effects 0.000 description 3
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
The invention discloses a kind of GaAs base HBT devices with heat to electricity conversion function of internet of things oriented, including：In the metal electrode layer surrounding of traditional HBT colelctor electrode, base stage and emitter stage, layer of silicon dioxide layer is made, is electrically isolated, while being used as the reference plane for making thermocouple；In silicon dioxide layer, 12 thermocouples being made up of thermo-electric metal arm and thermocouple GaAs arm are arranged around colelctor electrode, base stage and emitter stage respectively, and be sequentially connected in series by metal connecting line；One end of thermocouple is close to the electrode of place module, electrode of its other end away from place module.The present invention is simple in construction, it is easy to process, energy-conserving and environment-protective, according to Seebeck effect, the thermocouple put by surrounding electric poles effectively alleviates the heat dissipation problem of HBT devices while realizing thermoelectric energy conversion, and can be by the size of Seebeck pressure differential detection heat-dissipating power, with good economical and practical value.
Description
Technical field
The present invention relates to a kind of GaAs base HBT (heterojunction bipolars with heat to electricity conversion function of internet of things oriented
Transistor) device, belong to microelectromechanical systems (MEMS) technical field.
Background technology
Internet of Things is as the important component of generation information revolution, and its development triggered people in Internet of Things
Radio-frequency receiving-transmitting component confesses the concern of power technology.With the fast development of semiconductor devices, compound semiconductor HBT (hetero-junctions
Bipolar transistor) because the high mobility of GaAs (GaAs), there is higher switch compared to BJT (bipolar transistor)
Speed and cut-off frequency, and because HBT breakdown reverse voltage is big, bigger power output can be obtained.But, due to HBT
Current density is too high during work, and the rise of device temperature is caused in the case where self-heating amount is excessive, and temperature has positive feedback to electric current
Effect, can cause device performance variation even component failure, bring HBT integrity problems.
According to Seebeck effect (Seebeck effects), micro thermocouple battery uses different semi-conducting material manufacturings, its
Principle very simple, as long as electricity generation module two ends have the temperature difference can constant electric power output.Wherein, micro thermocouple battery will
The subject matter solved is wherefrom to obtain thermal source.
The present invention is to be applied based on GaAs technology and MEMS surface micromachined technological designs one kind in Internet of Things
The GaAs base HBT devices with heat to electricity conversion function in Netcom's news, on the one hand utilize the temperature under HBT proper device operations
Thermo-electric generation heat supply is distributed as, on the other hand the used heat of HBT devices is recycled, is conducive to while realizing thermoelectric energy conversion
The radiating of HBT devices, this is a kind of HBT devices applied in Internet of Things communication.
The content of the invention
Goal of the invention：In order to overcome the deficiencies in the prior art, the present invention provides a kind of having for internet of things oriented
The GaAs base HBT devices of heat to electricity conversion function, the features such as with simple in construction, easy to process, energy-conserving and environment-protective, are utilized around electricity
The thermocouple of pole arrangement, realizes the heat dissipation problem for effectively alleviating HBT devices while thermoelectric energy conversion.
Technical scheme：To achieve the above object, the technical solution adopted by the present invention is：
A kind of GaAs base HBT devices with heat to electricity conversion function of internet of things oriented, including GaAs base HBT are (different
Matter knot bipolar transistor) and some thermocouples；
Wherein, the GaAs base HBT includes GaAs (GaAs) substrate, the N+ of heavy doping set gradually from bottom to up
P type gallium arensidep layer, the N-type gallium arsenide layer, p type gaas layer, N-type aluminum gallium arsenide (AlGaAs) layer and the heavy doping that are lightly doped
N+ p type gallium arensideps launch site contact layer；
The N+ p type gallium arensideps layer is buries collecting zone, and N-type gallium arsenide layer is interior collecting zone, and p type gaas layer is base
Area, N-type aluminum gallium arsenide layer is on launch site, and N+ p type gallium arensideps layer, p type gaas layer and N+ p type gallium arensideps launch site contact layer
It is respectively arranged with colelctor electrode, three metal extraction poles of base stage and emitter stage；Colelctor electrode, base stage are surrounded on the GaAs base HBT
And emitter stage surrounding is provided with silicon dioxide passivation layer, to be electrically isolated；
The thermocouple is arranged in silicon dioxide passivation layer, and each thermocouple includes the thermo-electric metal being set up in parallel
Arm and thermocouple GaAs arm, are gone here and there successively between adjacent thermo-electric metal arm and thermocouple GaAs arm by metal connecting line
Connection.
Further, thermal source is provided for thermocouple by the Temperature Distribution that is produced under HBT proper device operations, passes through thermoelectricity
The heat dissipation problem of HBT devices, easy to process and energy-conserving and environment-protective are effectively alleviated while occasionally realizing thermoelectric energy conversion.
Further, the thermocouple is arranged and is sequentially connected in series around colelctor electrode, base stage and emitter stage respectively, forms three
Thermocouple module；One end of the thermocouple is close to the electrode of place module, and to contact thermal source, its other end is away from place module
Electrode, with away from thermal source, so as to realize the thermo-electric generation of stability and high efficiency.
Further, each Thermocouple module is provided with two thermocouple extraction poles, and three Thermocouple modules pass through gold
Category line is sequentially connected in series, and leaves two extraction poles as the output stage of Seebeck pressure difference.The electromotive force so produced is equal to each
Thermocouple module sum, the size of heat-dissipating power is detected further according to the electromotive force of measurement.
Temperature Distribution when further, for Η BT normal works, each Thermocouple module includes 12 and surrounds place
The electrode arrangement of module and the thermocouple being sequentially connected in series, heat to electricity conversion is realized according to Seebeck effect, and series connection thermocouple is then favourable
In increasing exponentially for Seebeck pressure difference.
Further, the size of the temperature difference is detected by the Seebeck pressure difference produced by three Thermocouple modules of detection, from
And the size of heat-dissipating power on GaAs base HBT is detected, it is easy to use and be easily achieved.
Further, the colelctor electrode, three metal extraction poles of base stage and emitter stage are made of Ti/Pt/Au metals, and
Respectively with N+ p type gallium arensideps layer, p type gaas layer and N+ p type gallium arensideps launch site contact layer formation Ohmic contact.
Beneficial effect：A kind of GaAs base HBT devices with heat to electricity conversion function for internet of things oriented that the present invention is provided
Part, relative to prior art, with advantages below：1st, it is simple in construction, based on existing GaAs techniques and MEMS surface micros
Processing, it is easy to accomplish, and can in real time be detected by Seebeck voltage size HBT devices work when heat-dissipating power it is big
It is small；2nd, the Temperature Distribution based on HBT, arranges one group of thermocouple, and effectively HBT devices are alleviated while realizing thermoelectric energy conversion
The heat dissipation problem of part, with good economical and practical value.
Brief description of the drawings
Fig. 1 is the top view of the GaAs base HBT devices with heat to electricity conversion function of internet of things oriented in the present invention；
Fig. 2 for the present invention in internet of things oriented the GaAs base HBT devices with heat to electricity conversion function along P-P ' to
Profile；
Fig. 3 for the present invention in internet of things oriented the GaAs base HBT devices with heat to electricity conversion function along Q-Q ' to
Profile；
Fig. 4 for the present invention in internet of things oriented the GaAs base HBT devices with heat to electricity conversion function along R-R ' to
Profile；
Fig. 5 for the present invention in internet of things oriented the GaAs base HBT devices with heat to electricity conversion function along S-S ' to
Profile；
Fig. 6 is thermocouple mould on the GaAs base HBT devices with heat to electricity conversion function of internet of things oriented in the present invention
Thermocouple distribution map in block；
Figure includes：1st, gallium arsenide substrate, 2, N+ p type gallium arensideps layer, 3, N-type gallium arsenide layer, 4, p type gaas layer, 5, N
Type aluminum gallium arsenide layer, 6, N+ p type gallium arensideps launch site contact layer, 7, metallic vias, 8, thermo-electric metal arm, 9, thermocouple arsenic
Gallium arm, 10, metal connecting line, 11, silicon dioxide passivation layer, 12, colelctor electrode, 13, base stage, 14, emitter stage, 15, Thermocouple module,
16th, thermocouple extraction pole.
Embodiment
The present invention is further described below in conjunction with the accompanying drawings.
It is as Figure 1-5 a kind of GaAs base HBT devices with heat to electricity conversion function of internet of things oriented, including arsenic
Change gallium base HBT and some thermocouples；
Wherein, the GaAs base HBT includes GaAs (GaAs) substrate 1, the N of heavy doping set gradually from bottom to up
+ p type gallium arensidep layer 2, the N-type gallium arsenide layer 3 that is lightly doped, p type gaas layer 4, N-type aluminum gallium arsenide (AlGaAs) layer 5 and again
The N+ p type gallium arensideps launch site contact layer 6 of doping；
The N+ p type gallium arensideps layer 2 is buries collecting zone, and N-type gallium arsenide layer 3 is interior collecting zone, and p type gaas layer 4 is
Base, N-type aluminum gallium arsenide layer 5 is launch site, and N+ p type gallium arensideps layer 2, p type gaas layer 4 and N+ p type gallium arensideps launch site connect
Colelctor electrode 12,14 3 metal extraction poles of base stage 13 and emitter stage are respectively arranged with contact layer 6；The GaAs base HBT upper measurements
Colelctor electrode 12, base stage 13 and the surrounding of emitter stage 14 are provided with silicon dioxide passivation layer 11, channel region is formed；
The thermocouple is arranged in silicon dioxide passivation layer 11, and the thermocouple that each thermocouple includes being set up in parallel is golden
Belong to arm 8 and thermocouple GaAs arm 9, metal connecting line 10 is passed through between adjacent thermo-electric metal arm 8 and thermocouple GaAs arm 9
It is sequentially connected in series.
As shown in fig. 6, the thermocouple is arranged and is sequentially connected in series around colelctor electrode 12, base stage 13 and emitter stage 14 respectively,
Form three Thermocouple modules 15；The thermocouple is arranged perpendicular to the edge of the electrode of place module, passes through GaAs base HBT
On Temperature Distribution provide thermal source for thermocouple, by thermocouple realize thermoelectric energy change while realize GaAs based hemts
Radiating.
In the present embodiment, each Thermocouple module 15 includes 12 thermocouples and two thermocouple extraction poles being sequentially connected in series
16, and three Thermocouple modules 15 are sequentially connected in series by metal connecting line 10, leave two extraction poles 16 as Seebeck pressure difference
Output stage, and then heat consumption on GaAs base HBT is detected by the Seebeck pressure difference produced by three Thermocouple modules 15 of detection
Dissipate the size of power.
In specific implementation process, the doping concentration of N+ p type gallium arensideps layer 2 is 5.0E18cm-3, and thickness is 1.0um；It is described
The doping concentration of N-type gallium arsenide layer 3 is 7.0E16cm-3, and thickness is 0.5um；The doping concentration of the p type gaas layer 4 is
2.0E19cm-3, and thickness is 0.05um (being less than 100nm)；The doping concentration of the N-type aluminum gallium arsenide layer 5 is 2.0E17cm-3,
And thickness is 0.2um；The doping concentration of the N+ p type gallium arensideps launch site contact layer 6 is 5.0E18cm-3, and thickness is 0.2um.
In specific implementation process, the colelctor electrode 12,14 3 metal extraction poles of base stage 13 and emitter stage use Ti/Pt/
Au metals are made；The thermocouple GaAs arm 9 is 5.0E17cm by doping concentration-3N+ p type gallium arensideps be made, the thermoelectricity
Even metal arm 8 is made of gold germanium ni au, and both consistency of thickness are 270nm.
The preparation method of the GaAs base HBT devices with heat to electricity conversion function of the internet of things oriented, including it is following
Step：
S1：One layer of gallium arsenide layer is grown using molecular beam epitaxy in semi-insulated gallium arsenide substrate 1, and it is carried out
Heavy doping, obtains N+ p type gallium arensideps layer 2, as HBT active layers, and its square resistance is 100 to 130 Ω/；
S2：Photoresist is coated on N+ p type gallium arensideps layer 2, the photoresist of collecting zone (C) position is removed, and generate one layer light
The N-type gallium arsenide layer 3 of doping, is used as interior collecting zone；
S3：The gallium arsenide layer 4 of one layer very thin p-type doping is grown on N-type gallium arsenide layer 3, base is used as；
S4：Photoresist is coated on p type gaas layer 4, the photoresist of base (B) position is removed, and generate one layer of N-type
AlGaAs layers 5, are used as launch site；
S5：One layer of N+ type GaAs launch sites contact layer 6, stripping photoresist are grown on N-type AlGaAs layers 5；
S6：Photoresist is coated on N+ p type gallium arensideps layer 2, p type gaas layer 4 and N+ type GaAs launch sites contact layer 6, is gone
Except the photoresist of metal extraction pole position, and one layer of Ti/Pt/Au metal level is grown, remove the photoetching outside metal extraction pole position
Metal on glue and photoresist, obtains HBT colelctor electrode 12, base stage 13 and emitter stage 14；
S7：The thick SO of one layer of 0.2um are grown around colelctor electrode 12, base stage 13 and the surrounding of emitter stage 142Passivation layer 11, and it is right
It is chemically-mechanicapolish polished, and is used as the reference plane for making thermocouple；
S8：In SO2Photoresist is coated on passivation layer 11, the photoresist of the position of thermocouple GaAs arm 9 is removed, and extension is given birth to
The N+ p type gallium arensideps of long one layer of heavy doping, N+ GaAs is anti-carved according to the shape of thermocouple GaAs arm 9, forms thermocouple arsenic
Gallium arm 9；
S9：Remove SO2The photoresist of the position of thermo-electric metal arm 8 on passivation layer 11, and gold germanium ni au is sputtered as thermoelectricity
Even metal arm 8, obtains thermo-electric metal arm 8 after stripping；
S10：Photoresist is coated, metal level thick one layer of 0.3um of evaporation is used as connection thermocouple GaAs arm 9 and thermocouple
The metal connecting line 10 of metal arm 8, removes photoresist, two thermocouple extraction poles 16 is left in each Thermocouple module 15；
S11：As shown in figure 5, growing one layer of SO on colelctor electrode 12 and the thermocouple extraction pole 16 of the module of base stage 132It is blunt
Change layer 11, it is chemically-mechanicapolish polished, and metallic vias 7 is done in the position of thermocouple extraction pole 16, deposit metallic gold and draw
To base stage 13 and the horizontal plane of emitter stage 14；As shown in figure 1, being attached thermocouple extraction pole 16 by depositing one layer of gold, stay
Lower two electrodes as Seebeck pressure difference output stage.
The GaAs base HBT devices with heat to electricity conversion function of the internet of things oriented of the present invention, connect with 36
Thermocouple.In the metal electrode layer surrounding of traditional HBT colelctor electrode, base stage and emitter stage, layer of silicon dioxide layer is made, is entered
Row is electrically isolated, while being used as the reference plane for making thermocouple；Face, 36 are made according to the pattern shown in Fig. 6 on silica
The thermocouple being made up of thermo-electric metal arm and thermocouple GaAs arm, is connected with metal connecting line.The present invention is according to plug shellfish
Gram effect, is put with 36 thermocouples around colelctor electrode, base stage and emitter stage, is realized that thermoelectric energy is changed, is realized collection of energy
While alleviate heat dissipation problem, and the size of heat-dissipating power on HBT devices can also be detected by Seebeck pressure difference.
Described above is only the preferred embodiment of the present invention, it should be pointed out that：For the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (6)
1. the GaAs base HBT devices with heat to electricity conversion function of a kind of internet of things oriented, it is characterised in that including GaAs
Base HBT and some thermocouples；
Wherein, the GaAs base HBT includes gallium arsenide substrate (1), the N+ type arsenic of heavy doping set gradually from bottom to up
Gallium layer (2), the N-type gallium arsenide layer (3) being lightly doped, p type gaas layer (4), N-type aluminum gallium arsenide layer (5) and the N+ of heavy doping
P type gallium arensidep launch site contact layer (6)；
It is respectively arranged with the N+ p type gallium arensideps layer (2), p type gaas layer (4) and N+ p type gallium arensideps launch site contact layer (6)
Colelctor electrode (12), (14) three metal extraction poles of base stage (13) and emitter stage, and on GaAs base HBT around colelctor electrode (12),
Base stage (13) and emitter stage (14) surrounding are provided with silicon dioxide passivation layer (11)；
The thermocouple is arranged in silicon dioxide passivation layer (11), and each thermocouple includes the thermo-electric metal being set up in parallel
Arm (8) and thermocouple GaAs arm (9), metal is passed through between adjacent thermo-electric metal arm (8) and thermocouple GaAs arm (9)
Line (10) is sequentially connected in series.
2. the GaAs base HBT devices with heat to electricity conversion function of internet of things oriented according to claim 1, its feature
It is, thermal source is provided for thermocouple by the Temperature Distribution on GaAs base HBT, realizes what thermoelectric energy was changed by thermocouple
GaAs base HBT radiating is realized simultaneously.
3. the GaAs base HBT devices with heat to electricity conversion function of internet of things oriented according to claim 2, its feature
It is, the thermocouple is arranged and is sequentially connected in series around colelctor electrode (12), base stage (13) and emitter stage (14) respectively, forms three
Thermocouple module (15)；One end of the thermocouple is close to the electrode of place module, electrode of its other end away from place module.
4. the GaAs base HBT devices with heat to electricity conversion function of internet of things oriented according to claim 3, its feature
It is, each Thermocouple module (15) is provided with two thermocouple extraction poles (16), and three Thermocouple modules (15) pass through gold
Category line (10) is sequentially connected in series.
5. the GaAs base HBT devices with heat to electricity conversion function of internet of things oriented according to claim 4, its feature
It is, each Thermocouple module (15) includes 12 electrode arrangements for surrounding place module and the thermocouple being sequentially connected in series.
6. the GaAs base HBT devices with heat to electricity conversion function of internet of things oriented according to claim 4, its feature
It is, heat dissipation work(on GaAs base HBT is realized by the Seebeck pressure difference produced by three Thermocouple modules (15) of detection
The detection of rate.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109720561A (en) * | 2017-10-30 | 2019-05-07 | 南京开天眼无人机科技有限公司 | A kind of unmanned plane with self-powered function |
| CN112968001A (en) * | 2019-12-13 | 2021-06-15 | 深圳第三代半导体研究院 | Voltage sensor based on gallium nitride/aluminum gallium nitrogen heterojunction and preparation method |
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| CN109720561A (en) * | 2017-10-30 | 2019-05-07 | 南京开天眼无人机科技有限公司 | A kind of unmanned plane with self-powered function |
| CN112968001A (en) * | 2019-12-13 | 2021-06-15 | 深圳第三代半导体研究院 | Voltage sensor based on gallium nitride/aluminum gallium nitrogen heterojunction and preparation method |
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