CN107395177A - The MESFET pipe amplifiers with self-powered function of internet of things oriented - Google Patents
The MESFET pipe amplifiers with self-powered function of internet of things oriented Download PDFInfo
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- CN107395177A CN107395177A CN201710555920.3A CN201710555920A CN107395177A CN 107395177 A CN107395177 A CN 107395177A CN 201710555920 A CN201710555920 A CN 201710555920A CN 107395177 A CN107395177 A CN 107395177A
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- internet
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- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 29
- 239000003990 capacitor Substances 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 230000005611 electricity Effects 0.000 claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 8
- 230000005678 Seebeck effect Effects 0.000 claims abstract description 5
- 230000003321 amplification Effects 0.000 claims abstract description 5
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 5
- 238000003860 storage Methods 0.000 claims abstract description 5
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 claims description 28
- 229910000927 Ge alloy Inorganic materials 0.000 claims description 22
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 21
- 239000010931 gold Substances 0.000 claims description 20
- 229910052737 gold Inorganic materials 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 239000000523 sample Substances 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 2
- 230000005619 thermoelectricity Effects 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 239000006185 dispersion Substances 0.000 abstract 1
- 238000011084 recovery Methods 0.000 abstract 1
- 238000005728 strengthening Methods 0.000 abstract 1
- 239000002918 waste heat Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 21
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 238000001259 photo etching Methods 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
- H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Amplifiers (AREA)
Abstract
The MESFET pipe amplifiers with self-powered function of the internet of things oriented of the present invention, including the MESFET amplifier tubes with heat to electricity conversion function, resistance, electric capacity, mu balanced circuit and bulky capacitor rechargeable battery.Layer of silicon dioxide layer is grown on traditional MESFET amplifier tubes, 12 thermocouples being made up of thermo-electric metal arm and thermocouple GaAs arm are respectively made on the source and drain grid of MESFET amplifier tubes, connected with metal connecting line Au, leave two electrodes as Seebeck voltage output stage "+" pole and " " pole.Signal is input to the grid of MESFET amplifier tubes by capacitance C1, and resistance R1 and resistance R2 form biasing, and source electrode is grounded by resistance R3, and the signal after amplification is exported by the drain electrode of MESFET amplifier tubes；" " electrode of Seebeck voltage is grounded, "+" electrode connects mu balanced circuit and bulky capacitor.According to Seebeck effects, MESFET amplifiers itself will work caused by Waste Heat Recovery be converted into electric energy, carry out power storage and self-powered, service life extended while strengthening its heat dispersion.
Description
Technical field
The present invention relates to microelectromechanical systems (MEMS) technical field, and in particular to a kind of internet of things oriented has
The MESFET pipe amplifiers of self-powered function.MESFET(Metal Epitaxial-Semiconductor Field Effect
Transistor), i.e. metal-semiconductor field effect transistor.
Background technology
After computer, internet and mobile radio communication, Internet of Things is as another information industry tide, in the world
Many things, it is small to wrist-watch, bracelet, greatly to automobile, as long as an embedded microchip, it is become intellectuality, and its
Required power consumption is very low.With the continuous development of energy collection technology, continuously emerge energy receipts are wasted to micropower in recent years
The report for collecting and utilizing.Immanent collection of energy in the energy and environment of waste is got up, is converted into electric energy, is various
Electronic equipment energizes, and is the effective way for serving Internet of Things.Thermoelectric generation helps people to collect the heat energy in environment, turns
Change electric energy into, be that Internet of Things or wearable device are powered, realize that energy automatically supplies.
Semiconductor temperature differential generating is a kind of green energy technology, is a kind of new generation technology, and it has following excellent
Point：(1) it is compact-sized, without abrasion, No leakage；(2) long lifespan and reliability height；(3) without hazardous emission, noiseless pollution.
Wherein, a key issue of semiconductor temperature differential generating technology is the generation of the temperature difference, that is, the acquisition of thermal source, and because
Caused used heat is just used as thermal source during MESFET pipe amplifier operations, and environment dirt is reduced while so saving the energy
Dye.
The present invention is based on a kind of internet of things oriented of GaAs techniques and MEMS surface micromachined technological designs
MESFET pipe amplifiers with self-powered function, this is a kind of MESFET pipe amplifiers applied in Internet of Things communication.
The content of the invention
It is an object of the invention to provide a kind of MESFET pipe amplifiers with self-powered function of internet of things oriented, tool
There is the MESFET of heat to electricity conversion function according to Seebeck effects, realize conversion of the heat energy to electric energy, caused control source is arrived
Bulky capacitor, carry out power storage；By caused control source to mu balanced circuit, steady dc voltage is exported, output is as electricity
Source, itself electric energy is provided for MESFET amplifiers.
To achieve the above object, the present invention adopts the following technical scheme that：
A kind of MESFET pipe amplifiers with self-powered function of internet of things oriented, including：With heat to electricity conversion function
MESFET amplifier tubes, resistance, electric capacity, mu balanced circuit and bulky capacitor rechargeable battery；Signal is input to by capacitance C1
The grid of MESFET amplifier tubes, resistance R1 and resistance R2 are respectively the upper below-center offset of grid, and the source electrode of MESFET amplifier tubes passes through
Resistance R3 is grounded, and the drain electrode of MESFET amplifier tubes is connected to VDD by resistance R4, and the signal after amplification passes through MESFET amplifier tubes
Drain electrode output, the drain electrode of MESFET amplifier tubes connect load resistance R5, mu balanced circuit and bulky capacitor charging electricity by capacitance C2
Pond meets VDD；The MESFET amplifier tubes using semi-insulated GaAs substrate, substrate be provided with N-type GaAs conductivity channel layers,
MESFET source regions, MESFET drain regions, source region Ohmic contact gold-germanium alloy layer, drain region Ohmic contact gold-germanium alloy layer, grid Xiao Te
Base contacts layer gold；The source region Ohmic contact gold-germanium alloy layer, drain region Ohmic contact gold-germanium alloy layer, grid Schottky contacts gold
The surrounding of layer is respectively equipped with insulating barrier；Several thermocouples are respectively equipped with the insulating barrier of the grid source-drain area；The thermocouple
Above-mentioned thermoelectric arm is connected including thermo-electric metal arm and thermocouple GaAs arm, and with metal connecting line Au, forms thermocouple；Institute
State and connected by metal connecting line Au between the thermocouple of grid source-drain area, grid source-drain area reserves 2 thermocouple probes respectively；Use metal
Line Au connects the thermocouple probes of grid source-drain area, leaves output stage "+" of two thermocouple probes as Seebeck voltage
Pole and "-" pole, "+" pole connect mu balanced circuit and bulky capacitor rechargeable battery, "-" pole ground connection.
Further, the source region Ohmic contact gold-germanium alloy layer, drain region Ohmic contact gold-germanium alloy layer, grid Schottky
The left and right sides of contact layer gold respectively puts 4 thermocouples, and upper and lower sides respectively put 2 thermocouples.
The distribution of temperature when further, for MESFET pipe normal amplifier operations is different, according to Seebeck effects
Heat to electricity conversion is realized, used heat is collected, is advantageous to radiate, so as to improve reliability, extends its service life.
Further, the Seebeck pressure difference of output is connected to mu balanced circuit and bulky capacitor rechargeable battery, can carry out electric energy
Storage, the size of electric energy is stored by detecting, so as to detect the size of dissipated power.
Further, caused Seebeck voltage is output to mu balanced circuit and bulky capacitor rechargeable battery, exports the straight of stabilization
Voltage is flowed, is connected to the power supply of MESFET pipe amplifiers, is realized self-powered and green energy resource sustainable.
Further, the material of the insulating barrier is silica.
The present invention has the advantages that：
1. the principle, simple in construction of the MESFET pipe amplifiers with self-powered function of the present invention, utilization is existing
GaAs techniques and MEMS surface micromachineds are easily achieved；
2. the MESFET pipes amplifier with self-powered function of the present invention produces plug according to Seebeck effects, thermocouple
Bake voltage, by mu balanced circuit, steady dc voltage is exported, the power supply as amplifier is powered, and realizes self-powered and green
The color energy it is sustainable；
3. the MESFET pipe amplifiers with self-powered function of the present invention fully absorb used heat, be advantageous to dissipate
Heat, improve reliability.
Brief description of the drawings
Fig. 1 is the schematic diagram of the MESFET pipe amplifiers with self-powered function of internet of things oriented of the present invention；
Fig. 2 is the top view of the MESFET pipe amplifiers with self-powered function of internet of things oriented of the present invention；
Fig. 3 is the P-P ' of the MESFET pipe amplifiers with self-powered function of internet of things oriented of the present invention to profile；
Fig. 4 is the Q-Q ' of the MESFET pipe amplifiers with self-powered function of internet of things oriented of the present invention to profile；
Fig. 5 is what the thermocouple in the MESFET pipe amplifiers with self-powered function of internet of things oriented of the present invention was put
Top view (i.e. Fig. 3 thermocouple 11).
Figure includes：GaAs substrates 1, silicon dioxide layer of protection 2, MESFET source regions 3, MESFET drain regions 4, source region ohm connect
Touch gold-germanium alloy layer 5, drain region Ohmic contact gold-germanium alloy layer 6, grid Schottky contacts layer gold 7, the metal arm 8 of thermocouple, heat
The GaAs arm 9 of galvanic couple, metal connecting line 10, thermocouple 11, N-type GaAs conductivity channel layers 12, mu balanced circuit and bulky capacitor battery
13。
Embodiment
The present invention will be further described below in conjunction with the accompanying drawings.
Referring to Fig. 1-5, the present invention proposes a kind of MESFET pipe amplifiers with self-powered function of internet of things oriented.
The MESFET pipe amplifiers mainly include：MESFET amplifier tubes, resistance, electric capacity, mu balanced circuit with heat to electricity conversion function and
Bulky capacitor rechargeable battery etc..Signal is input to the grid of MESFET amplifier tubes, resistance R1 and resistance R2 structures by capacitance C1
Into biasing, the signal after amplification is exported by MESFET drain electrode.Wherein, half-insulating GaAs substrate 1 is selected, is increased with plasma
Strong type chemical vapor deposition method (PECVD) grows one layer of silicon nitride, photoetching and etch nitride silicon layer, removes MESFET active areas
Silicon nitride, carry out N-type MESFET active area ion implantings, form N-type GaAs conductivity channel layers 12, use dry etching technology
Silicon nitride is all removed；Photoetching grid region, removes the photoresist in grid region, electron beam evaporation titanium/platinum/gold, remove photoresist and
Titanium/platinum/gold on photoresist, heating make titanium/platinum/gold form Schottky contacts with N-type GaAs active layer, obtain grid Xiao Te
Base contacts pole 7；Photoresist is coated, photoetching simultaneously etches N-type MESFET source electrodes and drain region formation N-type heavily doped region, injection
After obtain MESFET source regions 3 and MESFET drain regions 4, then carry out short annealing；Photoetching source electrode and drain electrode, remove source electrode and drain electrode
Photoresist, be evaporated in vacuo gold germanium ni au, after stripping alloying formed Ohmic contact, obtain MESFET source electrodes Ohmic contact gold
Germanium alloy pole 5 and drain ohmic contact gold-germanium alloy pole 6, traditional MESFET devices are made.
A layer insulating 2 is made in MESFET device gate regions, to isolate MESFET and thermocouple, avoids short circuit, is insulated
The material of layer is silica.Meanwhile be polished, to make thermocouple on silica.As shown in figure 5, thermocouple
Thermocouple GaAs arm 9 is used as by one layer of N+ GaAs of epitaxial growth, anti-carves N+ GaAs, forms doping concentration as 1017cm-3Thermocouple GaAs arm 9；The photoresist of gold germanium ni au will be retained by removing, and sputtering gold germanium ni au is as thermo-electric metal
Arm, obtains the metal arm 8 of thermocouple after stripping, its thickness is 270nm；One layer of layer gold of evaporation is used as metal connecting line connection grid region
12 thermocouples, reserve output electrode of two electrodes in lower section as grid region thermocouple.Then, repeat grid region and make thermocouple mistake
Journey, 12 thermocouples are respectively made in source-drain area, carry out line according to as shown in Figure 2, finally leave two thermocouple probes conducts
Seebeck voltage output stage "+" pole and "-" pole.
The "-" electrode of Seebeck pressure difference output stage is grounded, "+" electrode connects mu balanced circuit and bulky capacitor, carries out electric energy and deposits
Storage, steady dc voltage is exported, powered for MESFET amplifiers, realize the sustainable of self-powered and green energy resource.
The MESFET pipe amplifier preparation methods with self-powered function of the internet of things oriented of the present invention are as follows：
1) half-insulating GaAs substrate 1 is prepared；
2) deposit silicon nitride layer, one layer of silicon nitride is grown with plasma-enhanced chemical vapor deposition process (PECVD)；
3) photoetching and etch nitride silicon layer, the silicon nitride of MESFET active areas is removed；
4) N-type MESFET active areas ion implanting, after noting boron, annealed under nitrogen atmosphere；
5) N+ dopant redistributions are carried out after annealing at high temperature, form N-type GaAs conductivity channel layers 12；
6) silicon nitride is all removed using dry etching technology；
7) photoetching grid region, the photoresist in grid region is removed；
8) electron beam evaporation titanium/platinum/gold；
9) titanium/platinum/gold on photoresist and photoresist is removed；
10) heat, titanium/platinum/gold is formed Schottky contacts with N-type GaAs active layer, obtain grid Schottky contacts
Pole 7；
11) photoresist is coated, photoetching simultaneously etches N-type MESFET source electrodes and drain region formation N-type heavily doped region, injection
After obtain the ohmic contact regions of MESFET source regions 3 and the ohmic contact regions of MESFET drain regions 4, then carry out short annealing；
12) photoetching source electrode and drain electrode, source electrode and the photoresist of drain electrode are removed；
13) it is evaporated in vacuo gold germanium ni au；
14) peel off, alloying forms Ohmic contact, obtains MESFET source electrode Ohmic contact gold-germanium alloys pole 5 and drain electrode Europe
Nurse contact gold-germanium alloy pole 6；
15) photoresist is coated, retains source region Ohmic contact gold-germanium alloy layer 5, drain region Ohmic contact gold-germanium alloy layer 6, grid
The photoresist of the top of pole Schottky contacts layer gold 7；
16) SiO of 0.2 μm of epitaxial growth one layer2Insulating barrier 2, and chemically-mechanicapolish polish；
17) photoresist and SiO above grid 7 are removed2Insulating barrier 2；
18) photoresist is coated, removes the photoresist of the shape of thermocouple GaAs arm 9；
19) one layer of N+ GaAs of epitaxial growth forms the shape of thermocouple GaAs arm 9 as thermocouple GaAs arm,
N+ GaAs is anti-carved, forms doping concentration as 1017cm-3Thermocouple GaAs arm 9, remove photoresist；
20) photoetching：The photoresist of gold germanium ni au will be retained by removing；
21) gold germanium ni au is sputtered as thermo-electric metal arm 8, and its thickness is 270nm；
22) peel off, obtain the metal arm 8 of thermocouple, remove photoresist；
23) as shown in Fig. 2 coating photoresist, evaporates the thick layer gold of one layer of 0.3um and be used as connection GaAs arm 9 and metal
The metal connecting line of the grade of arm 8, photoresist is removed, leaves output stage "+" pole and "-" pole of two electrodes as Seebeck voltage；
24) the "-" electrode of Seebeck voltage is grounded, "+" electrode connects mu balanced circuit and bulky capacitor battery 13, and output is stable
DC voltage, provide electric energy for amplifier；
25) according to each resistance, electric capacity etc. shown in Fig. 2, is connected, obtain having the MESFET pipes of self-powered function to amplify
Device.
Distinguish whether be the structure standard it is as follows：
The MESFET pipes amplifier with self-powered function of the internet of things oriented of the present invention is included with heat to electricity conversion work(
MESFET pipes, amplifier circuit, mu balanced circuit and bulky capacitor rechargeable battery of energy etc..Signal is input to by capacitance C1
The grid of MESFET amplifier tubes, resistance R1 and resistance R2 are respectively the upper below-center offset of grid, and the source electrode of MESFET amplifier tubes passes through
Resistance R3 is grounded, and the drain electrode of MESFET amplifier tubes is connected to VDD by resistance R4, and the signal after amplification passes through MESFET amplifier tubes
Drain electrode output, the drain electrode of MESFET amplifier tubes connect load resistance R5, mu balanced circuit and bulky capacitor charging electricity by capacitance C2
Pond meets VDD.Above traditional MESFET grid layer gold surrounding active layer, layer of silicon dioxide layer is made, is electrically isolated,
Simultaneously as the reference plane for making thermocouple.Face on silica, 12 have been made by thermo-electric metal arm and thermocouple arsenic
Change the thermocouple of gallium arm composition, connected with metal Au, reserve two grid region thermocouple probes, the thermocouple for source-drain area of connecting
Electrode, leave output stage "+" and "-" of two electrodes as Seebeck voltage.The "-" pole of Seebeck voltage is grounded, "+" pole
Mu balanced circuit and bulky capacitor are output to, carries out power storage, steady dc voltage is exported, electric energy is provided for amplifier, is realized
Self-powered, it is sustainable green energy resource.
Meet that the structure of conditions above is considered as the pipes of the MESFET with self-powered function of the internet of things oriented of the present invention
Amplifier.
Described above is only the preferred embodiment of the present invention, it should be pointed out that：For the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (7)
1. a kind of MESFET pipe amplifiers with self-powered function of internet of things oriented, it is characterized in that：Including：Turn with thermoelectricity
Change MESFET amplifier tubes, resistance, electric capacity, mu balanced circuit and the bulky capacitor rechargeable battery of function；Signal is defeated by capacitance C1
Entering the grid to MESFET amplifier tubes, resistance R1 and resistance R2 are respectively the upper below-center offset of the grid of MESFET amplifier tubes,
The source electrode of MESFET amplifier tubes is grounded by resistance R3, and the drain electrode of MESFET amplifier tubes is connected to VDD by resistance R4, after amplification
Signal is exported by the drain electrode of MESFET amplifier tubes, and the drain electrode of MESFET amplifier tubes meets load resistance R5 by capacitance C2,
Mu balanced circuit and bulky capacitor rechargeable battery meet VDD；The MESFET amplifier tubes with heat to electricity conversion function produce Seebeck electricity
Pressure, the output stage "+" pole of Seebeck voltage connect mu balanced circuit and bulky capacitor rechargeable battery, "-" pole ground connection.
2. the MESFET pipe amplifiers with self-powered function of internet of things oriented according to claim 1, it is characterized in that：
The MESFET amplifier tubes using semi-insulated GaAs substrate (1), substrate (1) be provided with N-type GaAs conductivity channel layers (12),
MESFET source regions (3), MESFET drain regions (4), source region Ohmic contact gold-germanium alloy layer (5), drain region Ohmic contact gold-germanium alloy layer
(6), grid Schottky contacts layer gold (7)；The source region Ohmic contact gold-germanium alloy layer (5), drain region Ohmic contact gold-germanium alloy
Layer (6), the surrounding of grid Schottky contacts layer gold (7) are respectively equipped with insulating barrier (2)；The source region Ohmic contact gold-germanium alloy layer
(5), drain region Ohmic contact gold-germanium alloy layer (6), grid Schottky contacts layer gold (7) surrounding insulating barrier (2) on be respectively equipped with
Several thermocouples, connected by metal connecting line (10) between thermocouple, and it is electric as Seebeck to leave two thermocouple probes
The output stage "+" pole and "-" pole of pressure, "+" pole connect mu balanced circuit and bulky capacitor rechargeable battery (13), "-" pole ground connection；The thermoelectricity
It is even to be in series by thermo-electric metal arm (8) and thermocouple GaAs arm (9) by metal connecting line (10).
3. the MESFET pipe amplifiers with self-powered function of internet of things oriented according to claim 2, it is characterized in that：
The source region Ohmic contact gold-germanium alloy layer (5), drain region Ohmic contact gold-germanium alloy layer (6), grid Schottky contacts layer gold (7)
Left and right sides respectively put 4 thermocouples, upper and lower sides respectively put 2 thermocouples.
4. the MESFET pipe amplifiers with self-powered function of internet of things oriented according to claim 1, it is characterized in that：
The distribution of temperature during for MESFET pipe normal amplifier operations is different, and heat to electricity conversion is realized according to Seebeck effects, collects
Used heat, be advantageous to radiate, so as to improve reliability, extend its service life.
5. the MESFET pipe amplifiers with self-powered function of internet of things oriented according to claim 1, it is characterized in that：
The Seebeck pressure difference of output is connected to mu balanced circuit and bulky capacitor rechargeable battery, can carry out power storage, is stored by detecting
The size of electricity, so as to detect the size of heat-dissipating power.
6. the MESFET pipe amplifiers with self-powered function of internet of things oriented according to claim 1, it is characterized in that：
The Seebeck pressure difference of output connects mu balanced circuit and bulky capacitor rechargeable battery, obtains steady dc voltage, amplifies as MESFET
The power supply of pipe, self-powered is realized, and obtain sustainable green energy resource.
7. the MESFET pipe amplifiers with self-powered function of internet of things oriented according to claim 2, it is characterized in that：
The material of the insulating barrier (2) is silica.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113242025A (en) * | 2021-06-04 | 2021-08-10 | 东南大学 | Monolithic integration self-powered radio frequency amplifier for green communication of Internet of things |
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| US20110220162A1 (en) * | 2010-03-15 | 2011-09-15 | Siivola Edward P | Thermoelectric (TE) Devices/Structures Including Thermoelectric Elements with Exposed Major Surfaces |
| US20130193487A1 (en) * | 2010-08-02 | 2013-08-01 | Seles Es S.P.A. | High electron mobility transistors with field plate electrode |
| CN103904764A (en) * | 2014-03-17 | 2014-07-02 | 东南大学 | Gallium arsenide-based thermoelectric and photoelectric sensor in self-powered radio frequency receiving and transmitting assembly |
| CN103915459A (en) * | 2014-03-17 | 2014-07-09 | 东南大学 | Gallium-arsenide-based thermoelectric-photoelectric micro sensor in self-powered radio frequency transceiver module |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20110220162A1 (en) * | 2010-03-15 | 2011-09-15 | Siivola Edward P | Thermoelectric (TE) Devices/Structures Including Thermoelectric Elements with Exposed Major Surfaces |
| US20130193487A1 (en) * | 2010-08-02 | 2013-08-01 | Seles Es S.P.A. | High electron mobility transistors with field plate electrode |
| CN103904764A (en) * | 2014-03-17 | 2014-07-02 | 东南大学 | Gallium arsenide-based thermoelectric and photoelectric sensor in self-powered radio frequency receiving and transmitting assembly |
| CN103915459A (en) * | 2014-03-17 | 2014-07-09 | 东南大学 | Gallium-arsenide-based thermoelectric-photoelectric micro sensor in self-powered radio frequency transceiver module |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113242025A (en) * | 2021-06-04 | 2021-08-10 | 东南大学 | Monolithic integration self-powered radio frequency amplifier for green communication of Internet of things |
| CN113242025B (en) * | 2021-06-04 | 2022-10-28 | 东南大学 | Monolithic integration self-powered radio frequency amplifier for green communication of Internet of things |
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| CN107395177B (en) | 2020-05-19 |
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