CN205248271U - Multisource self -power integrated circuit - Google Patents
Multisource self -power integrated circuit Download PDFInfo
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- CN205248271U CN205248271U CN201521086834.5U CN201521086834U CN205248271U CN 205248271 U CN205248271 U CN 205248271U CN 201521086834 U CN201521086834 U CN 201521086834U CN 205248271 U CN205248271 U CN 205248271U
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Abstract
The utility model provides a multisource self -power integrated circuit, including multisource energy gatherer and integrated circuit, multisource energy gatherer and integrated circuit are common integrated on P type or N type substrate, and multisource energy gatherer includes the PN junction and covers the anti -reflecting layer on the PN junction, integrated circuit sets up on the substrate with the opposite one side of PN junction, multisource energy gatherer's P district and N district pass through plain conductor from inside lug connection to the integrated circuit of substrate respectively, for the integrated circuit power supply behind the multisource energy gatherer collection energy. Multisource energy gatherer includes still that the radio frequency energy gathers the antenna, and the radio frequency energy is gathered the antenna setting and on the anti -reflecting layer or set up on the substrate with the opposite one side of PN junction, is perhaps all being set up at these two faces simultaneously, antenna connection to integrated circuit is gathered to the radio frequency energy, for the integrated circuit power supply behind the antenna collection energy. The utility model discloses can gather the multiple energy to can steady in a long -termly carry power supply quantity, can use in various extremely dangerous environment.
Description
Technical field
The utility model relates to multi-source self-power integrated circuit, is specifically related to a kind of integrated with double source energy resource collecting deviceSelf-power integrated circuit, belong to the technical field of energy resource collecting and the integrated application of circuit.
Background technology
At present, can obtain efficiently, at low cost the energy of surrounding environment and be converted into electric energy substituting orThe generation technology that strengthens battery or other normal power supplies, power for low power dissipation electron equipment obtains just more and moreApplication; Above-mentioned generation technology often comprises the forms such as photovoltaic generation, piezoelectric type generating, electrodynamic type generating, thermoelectric,At present fresh few appearance of technology how multiple generation technology comprehensive utilization, formation various energy resources being gathered.
In the application of wireless sensor network (WSN) etc., have in a large number for remote probe environment and localityThe sensing of physical parameter (as temperature, pressure, flow velocity, fill, chemical substance exists and biotic factor etc.)Device, in the environment that sensors with auxiliary electrode were is applied in extremely mostly, remote districts are even dangerous, when supporting with sensorWhen the power supply generation electric weight using exhausts or produces fault, change power supply very inconvenient, and may give work peopleMember's personal safety brings danger, cannot change (such as inspection once the sensor even having is installed rear power supply at allSurvey the sensor of aircraft surface defect); In addition, some sensor needs to use for a long time decades (as 10～30Year), reliable electric weight supply steady in a long-term so just need to be provided. So being badly in need of one can provide for a long timeReliable electric weight supply and the self-contained electric system that can use in various extremely dangerous environment.
Although various generation technologies and integrated circuit have had respectively relevant report, by various energy resources collectionIt is a brand-new technology that technology and integrated circuit are integrated into a device, realizes this brand-new Technology Need solutionA series of new problems of determining, as: how various energy resources acquisition technique and integrated circuit are integrated in to a silicon chip liningAt at the end; The material that How to choose is suitable and preparation technology ensure the performance that device is good etc.
Summary of the invention
In order to overcome the following shortcoming existing in prior art: (1) existing energy resource collecting technology can only transformThe single energy is electric energy; (2) the energy acquisition part of existing self-contained electric system and storage area are discrete unitPart, volume and cost are larger, are not easy to install or change; (3) not yet there is energy in existing self-contained electric systemAmount gathers the technology mutually integrated with integrated circuit; (4) can not stably provide for a long time electric weight; (5) can not beIn various extremely dangerous environment, use; And the utility model provides a kind of multi-source self-power integrated circuit, its energyEnough gather various energy resources, comprehensive utilization; Volume is little, cost is low; Long-term stability provides electric weight; Can be at the various utmost pointsHold in dangerous environment and use.
The utility model solves the technical scheme that its technical problem adopts:
Multi-source self-power integrated circuit, comprises multi-source energy collecting device and integrated circuit, described multi-source energy acquisitionDevice and integrated circuit are integrated on P type or N-type substrate jointly, and described multi-source energy collecting device comprises PN junction and coversCover the anti-reflecting layer on PN junction; Described integrated circuit is arranged on the substrate of one side contrary to PN junction; DescribedP district and the N district of multi-source energy collecting device are directly connected to integrated by plain conductor from described substrate interior respectivelyCircuit is integrated circuit power supply after energy collecting device collecting energy.
Described multi-source energy collecting device also comprises that radio-frequency energy gathers antenna, and radio-frequency energy gathers antenna settingOn anti-reflecting layer or be arranged on the substrate of one side contrary with PN junction, or simultaneously at these two facesAll arrange; Described radio-frequency energy gathers antenna and is connected to integrated circuit, is integrated electric after antenna collecting energyRoad power supply.
Further, described radio-frequency energy gathers between antenna and integrated circuit and is also provided with mlultiplying circuit. Described taking advantage ofMethod circuit is arranged on substrate outside or is integrated in substrate.
Described P district and N district are respectively equipped with heavily doped region, and heavily doped region is connected with integrated circuit.
The beneficial effect the utlity model has is as follows:
(1) the utility model can synthetical collection various energy resources. Integrated photovoltaic solar cell and radio frequencyEnergy resource collecting antenna forms multiple-energy-source acquisition system, can be used as the unique electricity in the utility model self-powered moduleSource or stand-by power supply. Power because the utility model has two kinds of modes, avoided the problem of power supply instability.
(2) advantage of multi-source self-power integrated circuit of the present utility model is can be at dangerous environment, dangerousUnder environment, or in non-transformer or non-exchange battery situation, or the running that system need to be very long-term (asIn situation 10-30), use.
(3) the utility model is combined use with sensor, can be used for telemonitoring environment or other local conditionsData between sensitive periods, for example: what in sensor network, use carries out the long-range and duration to forest conditionLonger monitoring, so that the position of earlier detection data and forest fire to be provided, or the utility model for detection ofAircraft blemish etc.
(4) the utility model is by integrated to photovoltaic solar cell, radio-frequency energy collection antenna and integrated circuitBe arranged in same silicon chip substrate, volume-diminished, cost reduces greatly. Due to photovoltaic solar cell and penetratingThe galvanic process that takes place frequently and ic process compatibility, thus production cost increased hardly, and outside the utility modelAdd energy resource collecting device cost lower, volume is little.
(5) the utility model can use in various environment, as remote districts, forest fire protection, be inconvenient to changeBattery, operating period are grown (10-30), node is too much, replacing battery expense is too high, battery produces environmentPollution etc.
Brief description of the drawings
Fig. 1 is the schematic diagram of the connected mode of integrated circuit of the present utility model and solar cell;
Fig. 2 is the schematic diagram of the mlultiplying circuit in embodiment;
Fig. 3 is the enlarged diagram that the radio-frequency energy in embodiment gathers antenna;
Wherein, 1-P type substrate (P district), 2-N district, 3-anti-reflecting layer, 4-radio-frequency energy gathers antenna, 5-Transistor, 6-integrated circuit on line, 7-epitaxial layer, 8-insulating barrier, 9-shallow bore hole, 10-deep hole, 11-grid, 12-Source electrode, 13-drain electrode.
Detailed description of the invention
Below in conjunction with drawings and Examples, the utility model is described further.
The structure of the multi-source self-power integrated circuit of the present embodiment is as follows: photovoltaic solar cell and radio-frequency energy are adoptedCollection antenna 4 and integrated circuit are produced on a common P type substrate 1 jointly, photovoltaic solar cell and penetratingFrequently energy resource collecting antenna 4 is connected to integrated circuit by circuit respectively provides energy.
Substrate 1 is semi-conductor silicon chip, and the thickness of this silicon chip is about 700 microns, can be diameter be 100 millimeters,Circular or the foursquare silicon wafer of 200 millimeters or 300 millimeters.
As shown in Figure 1, at the back side of P type substrate 1, form the N district 2 of a doping with N-type adulterant,The thickness in N district 2 is about 1～2 micron, and itself and P type substrate 1 (being P district) form the PN of solar cellKnot, can also form heavily doped region in the interior preparation in P district and N district 2 of PN junction respectively further. Wherein,Above-mentioned doping adopts the mode (as phosphorus, arsenic plasma) of Implantation, after add one or more thermal anneal processActivate (as High temperature diffusion in 1000 DEG C of boiler tubes approximately 1 hour, rapid thermal annealing 800-1000 DEG C (RTP) approximately 1Second～3 minutes, 1100-1300 DEG C of laser annealing approximately 1 second-2 minutes), the high efficiency solar-electricity of above formationPond.
At the back side of P type substrate 1, cover one or more anti-reflecting layers 3 as protective layer, anti-reflecting layer 3Material can be silicon nitride (SixNy) or silica (SiOz) etc. there is the insulation material of high-k, withUpper insulation passivation technology comprises plasma enhanced chemical vapor deposition method (PECVD) and chemical vapour deposition (CVD)Method (CVD) etc.
Then on the surface of anti-reflecting layer 3, form radio frequency energy by metal deposition process (as the mode of sputter)Source gathers antenna 4, and the metal of sputter comprises aluminium, gold, silver, tungsten, copper or titanium nitride etc.; Then use photoetchingOr other figure producing methods, as peel off (liftoff), mask (shadowmask) etc. and metal deposition workSkill forms metal connecting line, radio-frequency energy is gathered to antenna 4 and be connected to integrated circuit for its power supply.
In the front of P type substrate 1, cover the epitaxial layer 7 of about 3 micron thick, on epitaxial layer 7, be provided with integrated electricRoad (comprising PMOS and nmos pass transistor 5) and other circuit devcie; These other circuit devcies comprise multiplication electricityRoad (being voltage multiplying circuit), as shown in Figure 2, this mlultiplying circuit is by standard integrated circuit for particular circuit configurationsTechnique realizes, and gathers antenna 4 input energy sources by radio-frequency energy, and output can be supplied with energy for integrated circuit. ShouldMlultiplying circuit also can not be arranged on epitaxial layer 7, and the outside that is arranged on substrate 1 is (as substrate back or outerConnect discrete circuit).
About the formation of transistor 5, adopt doping manufacturing step (injection of negative ions, as phosphorus, arsenic, boron,Boron fluoride ion) so that nXing HuopXing district to be provided, and then form grid 11/ dielectric stack structure, then pass throughTo provide the source electrode 12/ of p-type or N-shaped to drain 13, (same transistorized source electrode 12 and drain electrode 13 are all P type in dopingOr N-type) grid 11 and source electrode 12, drain electrode 13 by metal silicide or other materials as contacting stratum. CollectionBecome circuit to be also furnished with integrated circuit on line 6.
Surface at epitaxial layer 7 forms one deck or multilayer dielectric layer 8, also passable on outermost insulating barrier 8Be provided with radio-frequency energy and gather antenna 4.
Radio-frequency energy gathers antenna 4 and is mainly used for collecting energy, various forms of energy such as RF energy,And the energy collecting is sent to integrated circuit, integrated circuit connects various sensors, refers to for monitored dataMark; Accordingly, radio-frequency energy gather antenna 4 can also be by the energy of the storage in integrated circuit with such as radioAspect is carried out energy transmission, and then realizes the wireless charging to other device architectures. In order to improve radio frequency energySource gathers efficiency and the scope of antenna 4 energy acquisitions, this radio-frequency energy can be gathered to antenna 4 and arrange in the present embodimentFor structures such as the RF energy collecting units of the hook formation that comprises non-closure as shown in Figure 3. In concrete workIn skill process, can, according to concrete demand or device architecture feature, also this radio-frequency energy can be gathered to antenna 4 and establishPut in other regions, as long as it can be conducive to realize the collection of the energy such as such as photoelectricity various forms or sendCan.
As shown in Figure 1, as follows about the connected mode between self-power integrated circuit and solar cell: outsideProlong layer 7 on boring form respectively two connecting holes not of uniform size, due to varying in size of connecting hole, etching withThe connecting hole depth difference of rear formation, large connecting hole is deep, is deep hole 10, and little connecting hole is superficial,For shallow bore hole 9. The inside that shallow bore hole 9 runs through whole epitaxial layer 7 and is deeply communicated to substrate 1 communicates with P district, deeplyHole 10 is run through whole epitaxial layer 7 and P type substrate 1 and is deeply communicated with N district 2; Then adopt metal deposition workIn the cavity of skill in shallow bore hole 9 and deep hole 10, form two strip metal wires, plain conductor and integrated circuit on line6 connect, and connect respectively the drain electrode 13 of P type substrate 1 and integrated circuit by the plain conductor in shallow bore hole 9, darkPlain conductor in hole 10 connects respectively the source electrode 12 of N district 2 and integrated circuit. By above connected mode,Solar cell can provide energy for self-power integrated circuit.
The concrete steps that the present embodiment is prepared multi-source self-power integrated circuit are as follows:
(1) have on the surface of P type substrate 1, spin coating photoresist, and through solidify develop after remove unnecessaryPhotoresist, form tool figuratum mask, adopt successively the mode of solid diffusion or Implantation to adulterateAnd annealing, on P type substrate 1, form a doping N district 2, thereby form the PN junction of solar cell;In addition, can be further adulterate again and form heavily doped region in P district and N district 2 respectively.
(2) have on the substrate 1 of PN junction one side, forming protective layer by PECVD or CVD method,This protective layer preferably can be anti-reflecting layer 3, and material is chosen as silicon nitride (SixNy) or silica (SiOz)，As materials such as silica; Then,, on the surface of anti-reflecting layer 3, form radio-frequency energy by the mode of sputter
Gather antenna 4, the metal of sputter comprise aluminium (Al), gold (Au), silver (Ag), tungsten (W),Copper (Cu) or titanium nitride (TiN) etc.; Then use photoetching or other figure producing methods, as peel off (liftOff), mask (shadowmask) etc. forms metal connecting line with metal deposition process, by radio-frequency energy collectionAntenna 4 is connected to integrated circuit for its power supply. Radio-frequency energy gathers antenna more than 4 minor metal deposits that also can superposeTechnique is to form thick metal film.
(3) said structure is overturn and be fixed on the carrying wafer providing in advance, at the back side of PN junctionSubstrate 1 on the epitaxial layer 7 of about 3 micron thickness is set, on epitaxial layer 7, be provided with PMOS and NMOSTransistor 5 and mlultiplying circuit: mlultiplying circuit gathers antenna 4 with radio-frequency energy respectively and integrated circuit is connected,Radio-frequency energy gathers antenna 4 and gathers after the energy, by mlultiplying circuit amplification voltage signal, for integrated circuit is supplied withEnergy.
About having, the formation step of PMOS and nmos pass transistor 5 is as follows: (just adopting doping manufacturing stepThe injection of anion, as phosphorus, arsenic, boron, boron fluoride ion) on epitaxial layer 7, form nXing HuopXing district,Then form gate electrode/dielectric stack structure, then provide p-type or N-shaped source/drain by doping method,Grid and source/drain by metal silicide or other materials as contacting stratum.
(4) hole on above-mentioned epitaxial layer 7 by photoetching, etching technics, be respectively equipped with shallow bore hole 9 and deep hole10, shallow bore hole 9 runs through epitaxial layer 7 and is deeply communicated to the inside of P type substrate 1, and deep hole 10 runs through epitaxial layer7 and P type substrate 1 be deeply communicated to the inside in N district 2. Then adopt metal deposition process at shallow bore hole 9With in cavity in deep hole 10, form two strip metal wires; Connect respectively P by the plain conductor in shallow bore hole 9The drain electrode 13 of the heavily doped region of type substrate 1 and transistor 5, the plain conductor in deep hole 10 connects respectively N districtThe source electrode 12 of 2 heavily doped region and transistor 5. By above connected mode, solar cell can be certainlyPower supply integrated circuit provides energy.
(5) on the surface of above-mentioned epitaxial layer 7, cover three-layer insulated layer 8, on outermost insulating barrier 8Also can be provided with radio-frequency energy and gather antenna 4.
The foregoing is only a preferred embodiment of the present utility model, do not form the utility model is protectedThe restriction of scope. Any any amendment of doing within spirit of the present utility model and principle, be equal to replace andImprove etc., within all should being included in claim protection domain of the present utility model.
Claims (5)
1. multi-source self-power integrated circuit, is characterized in that, comprises multi-source energy collecting device and integrated circuit,Described multi-source energy collecting device and integrated circuit are integrated on P type or N-type substrate jointly, and described multi-source energy is adoptedStorage comprises PN junction and covers the anti-reflecting layer on PN junction; Described integrated circuit is arranged on contrary with PN junction oneOn the substrate of face; The P district of described multi-source energy collecting device and N district respectively by plain conductor in described substratePortion is directly connected to integrated circuit, is integrated circuit power supply after energy collecting device collecting energy.
2. multi-source self-power integrated circuit as claimed in claim 1, is characterized in that, described multi-source energy is adoptedStorage also comprises that radio-frequency energy gathers antenna, and radio-frequency energy gathers antenna and is arranged on anti-reflecting layer or is arranged onOn the substrate of one side contrary to PN junction, or all arrange at these two faces simultaneously; Described radio-frequency energy gathers skyLine is connected to integrated circuit, is integrated circuit power supply after antenna collecting energy.
3. multi-source self-power integrated circuit as claimed in claim 2, is characterized in that, described radio-frequency energy is adoptedBetween collection antenna and integrated circuit, be also provided with mlultiplying circuit.
4. multi-source self-power integrated circuit as claimed in claim 3, is characterized in that, described mlultiplying circuit is establishedPut outside at substrate or be integrated in substrate.
5. the multi-source self-power integrated circuit as described in one of claim 1 to 4, is characterized in that, described PDistrict and N district are respectively equipped with heavily doped region, and heavily doped region is connected with integrated circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521086834.5U CN205248271U (en) | 2015-12-23 | 2015-12-23 | Multisource self -power integrated circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201521086834.5U CN205248271U (en) | 2015-12-23 | 2015-12-23 | Multisource self -power integrated circuit |
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| CN205248271U true CN205248271U (en) | 2016-05-18 |
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| CN201521086834.5U Expired - Fee Related CN205248271U (en) | 2015-12-23 | 2015-12-23 | Multisource self -power integrated circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428357A (en) * | 2015-12-23 | 2016-03-23 | 宁波微能物联科技有限公司 | Multi-source self-powered integrated circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428357A (en) * | 2015-12-23 | 2016-03-23 | 宁波微能物联科技有限公司 | Multi-source self-powered integrated circuit |
| CN105428357B (en) * | 2015-12-23 | 2018-07-27 | 宁波微能物联科技有限公司 | Multi-source self-powered integrated circuit |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160518 Termination date: 20181223 |
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| CF01 | Termination of patent right due to non-payment of annual fee |