CN204144271U - A kind of monocrystaline silicon solar cell with passivation structure on back - Google Patents
A kind of monocrystaline silicon solar cell with passivation structure on back Download PDFInfo
- Publication number
- CN204144271U CN204144271U CN201420650780.XU CN201420650780U CN204144271U CN 204144271 U CN204144271 U CN 204144271U CN 201420650780 U CN201420650780 U CN 201420650780U CN 204144271 U CN204144271 U CN 204144271U
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- China
- Prior art keywords
- solar cell
- passivation
- passivation structure
- film
- silicon solar
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- 238000002161 passivation Methods 0.000 title claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 31
- 239000010703 silicon Substances 0.000 title claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052709 silver Inorganic materials 0.000 claims abstract description 9
- 239000004332 silver Substances 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 26
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 229910004205 SiNX Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000011160 research Methods 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N nitrous oxide Inorganic materials [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000000763 evoking effect Effects 0.000 description 1
- 235000011194 food seasoning agent Nutrition 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a kind of monocrystaline silicon solar cell with passivation structure on back, comprise Si substrate, the front of Si substrate is successively to being outside equipped with N
+layer emitter, SiN
xanti-reflection layer, based on N
+layer emitter is also provided with and penetrates SiN
xthe front silver electrode of anti-reflection layer, is characterized in that: the back side of Si substrate is provided with passivation structure on back, and this passivation structure on back is overlayer passivation dielectric layer, and overlayer passivation dielectric layer is followed successively by Al from inside to outside
2o
3film and SiO
xn
yfilm; This passivating structure can make solar cell reduce back surfaces compound, reaches the object improving photoelectric conversion efficiency.
Description
Technical field
The utility model belongs to solar energy manufacturing technology field, is specifically related to a kind of monocrystaline silicon solar cell with passivation structure on back.
Background technology
Commercial solar cell market more than 85% is still occupied by crystal-silicon solar cell product, and it is very fierce that the cost performance around efficiency and cost structure is competed.Monocrystalline silicon battery mainly contains the product of P type and N-type two kinds of various substrates, and due to the cost advantage in substrate price, non-silicon cost, current staple market product is still based on p type single crystal silicon solar cell.As how a small amount of input, introducing new technique increases the research direction that cell photoelectric conversion efficiency is p type single crystal silicon solar cell.
In recent years, surface passivation is the study hotspot of crystal silicon battery.No matter be P type or n type single crystal silicon solar cell, battery front surface, back surface prepares dielectric passivation, is the basis that high-efficiency battery technology is carried out, and is also one of effective way improving solar cell photoelectric conversion efficiency.PECVD device is the most frequently used vacuum coating equipment of crystal silicon battery production line, can have the SiN of antireflective and passive behavior by low-temperature growth
xfilm, for the pole passivation of crystal silicon battery front side emitter.The passivation film at the back side needs to possess negative charge characteristic, therefore silicon oxynitride SiO
xn
yfilm prepares silicon nitride SiN in routine
xincrease by one road gas-laughing gas N on the PECVD device basis of film
2o, deposits the silicon oxynitride passivation film obtained with negative charge characteristic.Nearest a period of time, metal-oxide film prepared by ald (ALD) technology has excellent passive behavior to crystalline silicon, has evoked the great interest of industry to this surface passivation material and technology.Aluminum oxide film prepared by ALD has all showed excellent passive behavior in p-type and N-shaped silicon face, and on low-doped and highly-doped p-type surface, there is good thermal stability, this point is for particularly important the solar cell adopting screen printing technique to produce.
At present, the research of lamination oxide passivation dielectric layer is in the Beginning of Electrical Market stage, and various types of overlayer passivation dielectric layer research becomes study hotspot, and the high efficiency battery product with efficient passivation film is also released successively.In June, 2014, brilliant Australia, Nanjing Zhong electricity Deng company are proposed the back of the body passivation p-type monocrystalline solar cells of 20.4% and 20.3% photoelectric conversion efficiency, in July, 2014, Belgian IMEC research institute be proposed efficiency up to 21.5% new passivation N-shaped monocrystalline solar cells.These new products are all based on novel passivating technique, and therefore at a nearest evaluation time, novel efficient passivation dielectric layer will become the main direction of studying of domestic and international manufacture of solar cells enterprise and research institute.One of the emphasis that overlayer passivation dielectric layer will become in the research and development of efficient crystal silicon battery.
Utility model content
The utility model is based on existing monocrystalline silicon battery manufacturing process, propose a kind of monocrystaline silicon solar cell with passivation structure on back, the surface recombination velocity at solar cell back can be reduced by special passivation structure on back, extend the minority carrier life time of crystal silicon battery, and then reach the object improving photoelectric conversion efficiency.
The utility model concrete scheme is as follows:
Have a monocrystaline silicon solar cell for passivation structure on back, comprise Si substrate, the front of Si substrate is successively to being outside equipped with N
+layer emitter, SiN
xanti-reflection layer, based on N
+layer emitter is also provided with and penetrates SiN
xthe front silver electrode of anti-reflection layer, is characterized in that: the back side of Si substrate is provided with passivation structure on back, and this passivation structure on back is overlayer passivation dielectric layer, and overlayer passivation dielectric layer is followed successively by Al from inside to outside
2o
3film and SiO
xn
yfilm.
Described SiO
xn
yfilm and Al
2o
3film is the thin-film material of even compact.
Described passivation structure on back belongs to back surfaces passivating structure.
It is Al back surface field outside described passivation structure on back.
The back side of described Si substrate is provided with the back silver electrode penetrating passivation structure on back, Al back surface field.
The beneficial effects of the utility model are as follows:
The passivation structure on back that the utility model is formed can reduce the surface recombination velocity at solar cell back, extends the minority carrier life time of crystal silicon battery, and then reaches the object improving photoelectric conversion efficiency.
accompanying drawing illustrates:
Fig. 1 is the p-type monocrystaline silicon solar cell schematic diagram with back laminate dielectric passivation Rotating fields;
Wherein, Reference numeral is: 1, front silver electrode; 2, SiN
xanti-reflection layer; 3, N
+layer emitter; 4, P type Si substrate; 5, passivation structure on back (lamination Al
2o
3film and SiO
xn
yfilm); 6, Al back surface field (6); 7, back silver electrode.
Embodiment
As shown in Figure 1, for p-type monocrystaline silicon solar cell, the utility model structure is as follows:
A kind of monocrystaline silicon solar cell with passivation structure on back, comprise P type Si substrate 4, the front of P type Si substrate 4 is successively to being outside equipped with N+ layer emitter 3, SiNX anti-reflection layer 2, based on N+ layer emitter 3 being also provided with the front silver electrode 1 penetrating SiNX anti-reflection layer 2, the back side of Si substrate is provided with passivation structure on back 5, this passivation structure on back 5 is overlayer passivation dielectric layer, and overlayer passivation dielectric layer is followed successively by Al from inside to outside
2o
3film and SiO
xn
yfilm.
Described SiO
xn
yfilm and Al
2o
3film is the thin-film material of even compact.
Described passivation structure on back 5 belongs to back surfaces passivating structure.
Be Al back surface field 6 outside described passivation structure on back 5.
The back side of described P type Si substrate 4 is provided with the back silver electrode 7 penetrating passivation structure on back 5, Al back surface field 6.
The manufacture method of this p-type monocrystaline silicon solar cell is as follows:
Step 1:p type silicon chip substrate carries out twin polishing on alkali etching device, then cleans, hot-air seasoning;
Step 2: silicon chip is put into vacuum degree on ald (ALD) equipment vacuum chamber specimen holder and remain on 600-800pa, chamber temp is 300 DEG C;
Step 3: pass into TMA and water successively, carries out monoatomic layer cycle growth, and an atomic layer level thickness controls between 0.1 ~ 0.2nm;
Step 4: repeat step 3, through multicycle cycle deposition growing, just can form the uniform Al of one deck at matrix surface
2o
3film, thickness range 5 ~ 20nm;
Step 5: take out silicon chip substrate and put into PECVD device, PE build-up of luminance power controls at 5500w-6200w, and pressure controls at 900-1200mTor, passes into the ammonia NH of different flow
3silane, SiH
4with laughing gas N
2o, deposition SiO
xn
yfilm, thickness range 20 ~ 50nm;
Step 6: the preparation completing passivating back dielectric layer, enters normal p-type monocrystalline silicon battery preparation technology flow process.
Claims (7)
1. one kind has the monocrystaline silicon solar cell of passivation structure on back, comprise Si substrate, the front of Si substrate is successively to being outside equipped with N+ layer emitter (3), SiNX anti-reflection layer (2), based on N+ layer emitter (3) being also provided with the front silver electrode (1) penetrating SiNX anti-reflection layer (2), it is characterized in that: be provided with passivation structure on back (5) at the back side of Si substrate, this passivation structure on back (5) is overlayer passivation dielectric layer, and overlayer passivation dielectric layer is followed successively by Al from inside to outside
2o
3film and SiO
xn
yfilm.
2. the monocrystaline silicon solar cell with passivation structure on back according to claim 1, is characterized in that: described SiO
xn
yfilm and Al
2o
3film is the thin-film material of even compact.
3. the monocrystaline silicon solar cell with passivation structure on back according to claim 1, is characterized in that: described Al
2o
3film, thickness range 5 ~ 20nm.
4. the monocrystaline silicon solar cell with passivation structure on back according to claim 1, is characterized in that: described SiO
xn
ythickness range 20 ~ the 50nm of film.
5. the monocrystaline silicon solar cell with passivation structure on back according to claim 1, is characterized in that: described passivation structure on back (5) belongs to back surfaces passivating structure.
6. the monocrystaline silicon solar cell with passivation structure on back according to claim 1, is characterized in that: described passivation structure on back (5) outside is Al back surface field (6).
7. the monocrystaline silicon solar cell with passivation structure on back according to claim 6, is characterized in that: the back side of described Si substrate is provided with the back silver electrode (7) penetrating passivation structure on back (5), Al back surface field (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420650780.XU CN204144271U (en) | 2014-11-04 | 2014-11-04 | A kind of monocrystaline silicon solar cell with passivation structure on back |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420650780.XU CN204144271U (en) | 2014-11-04 | 2014-11-04 | A kind of monocrystaline silicon solar cell with passivation structure on back |
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| Publication Number | Publication Date |
|---|---|
| CN204144271U true CN204144271U (en) | 2015-02-04 |
Family
ID=52420937
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|---|---|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104882498A (en) * | 2015-05-14 | 2015-09-02 | 苏州阿特斯阳光电力科技有限公司 | PERC solar cell |
| CN110943146A (en) * | 2019-12-16 | 2020-03-31 | 通威太阳能（安徽）有限公司 | Film coating method and manufacturing method of PERC solar cell and PERC solar cell |
| CN111029436A (en) * | 2019-10-14 | 2020-04-17 | 中建材浚鑫科技有限公司 | P-type single crystal PERC battery capable of improving LeTID phenomenon and manufacturing method thereof |
-
2014
- 2014-11-04 CN CN201420650780.XU patent/CN204144271U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104882498A (en) * | 2015-05-14 | 2015-09-02 | 苏州阿特斯阳光电力科技有限公司 | PERC solar cell |
| CN104882498B (en) * | 2015-05-14 | 2018-02-16 | 苏州阿特斯阳光电力科技有限公司 | A kind of PERC solar cells |
| CN111029436A (en) * | 2019-10-14 | 2020-04-17 | 中建材浚鑫科技有限公司 | P-type single crystal PERC battery capable of improving LeTID phenomenon and manufacturing method thereof |
| CN111029436B (en) * | 2019-10-14 | 2021-09-21 | 中建材浚鑫科技有限公司 | P-type single crystal PERC battery capable of improving LeTID phenomenon and manufacturing method thereof |
| CN110943146A (en) * | 2019-12-16 | 2020-03-31 | 通威太阳能（安徽）有限公司 | Film coating method and manufacturing method of PERC solar cell and PERC solar cell |
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|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |