CN102694049A - Silicon thin film solar cell with novel intermediate layer structure - Google Patents

Silicon thin film solar cell with novel intermediate layer structure Download PDF

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Publication number
CN102694049A
CN102694049A CN2012101849469A CN201210184946A CN102694049A CN 102694049 A CN102694049 A CN 102694049A CN 2012101849469 A CN2012101849469 A CN 2012101849469A CN 201210184946 A CN201210184946 A CN 201210184946A CN 102694049 A CN102694049 A CN 102694049A
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China
Prior art keywords
silicon
solar cell
film solar
intermediate layer
interlayer structure
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CN2012101849469A
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Chinese (zh)
Inventor
高锦成
黄跃龙
王志强
朱红兵
王颖
关峰
薛萌
马云祥
孙晓东
延小鹏
许浩宾
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BAODING TIANWEI SOLARFILMS Co Ltd
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BAODING TIANWEI SOLARFILMS Co Ltd
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Priority to CN2012101849469A priority Critical patent/CN102694049A/en
Publication of CN102694049A publication Critical patent/CN102694049A/en
Pending legal-status Critical Current

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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)

Abstract

The invention discloses a high-efficiency silicon thin film solar cell with a novel intermediate layer structure. The novel intermediate layer structure is introduced into the silicon thin film solar cell, and comprises a multilayer n-type microcrystalline silicon oxide material or n-type microcrystalline silicon nitride material structure or a multilayer composite structure of an n-type microcrystalline silicon oxide material and an n-type microcrystalline silicon nitride material, and the structure has 2 to 10 layers; and the refractivity range of the intermediate layer structure is 1.4 to 2.5, and the thickness range of the intermediate layer structure is 10 to 100nm. The solar cell has the advantages that the thickness of an intrinsic layer of a top cell of an amorphous silicon/microcrystalline silicon stacked solar cell can be kept unchanged, the short-circuit current density and photoelectric conversion efficiency of the top cell can be improved, and the invention can be applied to the preparation and actual batch production of the silicon-based thin film solar cells.

Description

A kind of silicon film solar batteries that possesses novel interlayer structure
Technical field
The present invention relates to a kind of silicon film solar batteries that possesses novel interlayer structure, belong to the silicon film solar batteries production technical field.
Background technology
In the amorphous silicon/microcrystalline silicon tandem solar cell, because amorphous silicon top battery exists photic decline problem to cause power to descend, the intrinsic layer thickness of attenuate amorphous silicon top battery helps to reduce photic decline problem.But the intrinsic layer thickness of attenuate amorphous silicon top battery can reduce the short-circuit current density of top battery, thereby reduces the transformation efficiency of battery.Under the situation of the photic decline problem that reduces amorphous silicon top battery, the method that improves top battery short circuit current density plays crucial effects for obtaining efficient solar battery.How to obtain the short-circuit current density of higher top battery, thereby improve amorphous/crystalline/micro-crystalline silicon laminated Thinfilm solar cell assembly short-circuit current density, become one of effective key issue that improves the laminated cell transformation efficiency.
Summary of the invention
The objective of the invention is to disclose a kind of silicon film solar batteries structure that possesses novel interlayer structure.The present invention can improve the short-circuit current density of top battery and the electricity conversion of battery when the top battery intrinsic layer thickness that keeps the amorphous silicon/microcrystalline silicon tandem solar cell is constant, solve the problems referred to above that background technology exists.
Technical scheme of the present invention is: a kind of silicon film solar batteries that possesses interlayer structure, in silicon film solar batteries, introduce interlayer structure, and interlayer structure comprises multilayer n type crystallite silica (μ c-SiO x: H) material or n type crystallite silicon nitride (μ c-SiN x: H) material structure, perhaps multilayer n type crystallite silica (μ c-SiO x: H) material and n type crystallite silicon nitride (μ c-SiN x: the H) composite construction of material.
Described multilayer quantity is 2 to 10 layers.
The ranges of indices of refraction in said intermediate layer is at 1.4-2.5, and total thickness is at 10-100nm.
Described silicon film solar batteries comprises: amorphous silicon/amorphous silicon laminated solar cell, and the amorphous silicon/microcrystalline silicon tandem solar cell, the lamination solar cell of corresponding sige alloy can be used too.
A kind of preparation method who possesses the silicon film solar batteries of interlayer structure introduces interlayer structure in silicon film solar batteries, interlayer structure comprises multilayer n type crystallite silica (μ c-SiO x: H) material or n type crystallite silicon nitride (μ c-SiN x: H) material structure, perhaps multilayer n type crystallite silica (μ c-SiO x: H) material and n type crystallite silicon nitride (μ c-SiN x: the H) composite construction of material; Described multilayer n type crystallite silica (μ c-SiO x: H) material and/or n type crystallite silicon nitride (μ c-SiN x: the H) preparation of material may further comprise the steps:
Have on the substrate of nesa coating, using plasma strengthens boron doped p type silicon layer, intrinsic silicon layer and the phosphorus doping n type silicon layer of the technological top battery of growing successively of chemical vapour deposition (CVD) (PECVD);
Using plasma enhancing chemical vapour deposition technique prepares multilayer n type crystallite silica (μ c-SiO on phosphorus doping n type layer x: H) material and/or n type crystallite silicon nitride (μ c-SiN x: H) material.
Deposition n type crystallite silica (μ c-SiO x: H) material and/or n type crystallite silicon nitride (μ c-SiN x: H) during material, the correlative sediments parameter area is:
Aura driving frequency scope is at 13.56MHz to 100MHz, hydrogen thinner ratio H 2/ SiH 4Be 60-180; Doping ratio PH 3/ SiH 4Be 2-10; Reaction pressure is 0.1mbar-10mbar; Reaction time is 5min-10min.
Good effect of the present invention: can be when the top battery intrinsic layer thickness that keeps the amorphous silicon/microcrystalline silicon tandem solar cell is constant; Improve the short-circuit current density of top battery and the electricity conversion of battery, can be applied to the preparation and the actual commercial production in batches of silicon-based film solar cells.
Description of drawings
Fig. 1 is an embodiment of the invention structural representation;
Fig. 2 for the embodiment of the invention prepares in the test of battery and homogeneous need not novel intermediate layer material (other is identical) preparation the I-V curve of battery;
Among the figure: glass substrate 1, preceding nesa coating 2, amorphous silicon top battery 3, intermediate layer n type crystallite silica (μ c-SiO x: H) film 1, intermediate layer n type microcrystal silicon (μ c-Si:H) film 5, intermediate layer n type crystallite silica (μ c-SiO x: H) film 26, and battery 7 at the bottom of the microcrystal silicon, back of the body nesa coating 8, encapsulating material 9, back of the body glass 10.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further specified through embodiment.
A kind of silicon film solar batteries that possesses interlayer structure is introduced interlayer structure in silicon film solar batteries, interlayer structure comprises multilayer n type crystallite silica (μ c-SiO x: H) material or n type crystallite silicon nitride (μ c-SiN x: H) material structure, perhaps multilayer n type crystallite silica (μ c-SiO x: H) material and n type crystallite silicon nitride (μ c-SiN x: the H) composite construction of material.Described multilayer quantity is 2 to 10 layers.
With reference to accompanying drawing 1; In amorphous silicon/microcrystalline silicon solar cell; Introduce the intermediate layer; Comprise battery 7 at the bottom of glass substrate 1, preceding nesa coating 2, amorphous silicon top battery 3, intermediate layer, the microcrystal silicon, back of the body nesa coating 8, encapsulating material 9 and back of the body glass 10, interlayer structure comprises n type crystallite silica (μ c-SiO x: H) film 1, n type microcrystal silicon (μ c-Si:H) film 5 and n type crystallite silica (μ c-SiO x: H) film 26, and one deck n type microcrystal silicon (μ c-Si:H) film is arranged on two-layer n type crystallite silica (μ c-SiO x: H) between the film.
The preparation method of the embodiment of the invention:
A kind of preparation method who possesses the silicon film solar batteries of novel interlayer structure:
(1) glass substrate is put into cleaning equipment, add cleaning agent and clean, dry up through deionized water rinsing, nitrogen successively then;
(2) on glass substrate, adopt low-pressure chemical vapor deposition (LPCVD) method to prepare the ZnO:B transparent conductive film;
(3) adopt laser to draw carving technology and accomplish the P1 crossed process;
(4) using plasma strengthens p layer, intrinsic i layer and the n layer that chemical vapour deposition (CVD) (PECVD) method control deposition parameter prepares the top battery;
(5) on the sample with amorphous silicon top battery, using plasma strengthens the preparation of chemical vapour deposition (CVD) (PECVD) method control deposition parameter and has two-layer n type crystallite silica (μ c-SiO x: the H) interlayer structure of material and one deck n type microcrystal silicon (μ c-Si:H) material;
(6) on the sample with amorphous silicon top battery/interlayer structure, using plasma strengthens p layer, intrinsic i layer and the n layer that chemical vapour deposition (CVD) (PECVD) method control deposition parameter prepares end battery;
(7) adopt laser to draw carving technology and the sample with battery/intermediate layer, amorphous silicon top/end battery is carried out laser draw quarter, accomplish the P2 crossed process;
(8) adopt low-pressure chemical vapor deposition to mix the ZnO back of the body conductive electrode of B;
(9) adopt laser to draw carving technology and accomplish the P3 crossed process;
(10) carry out electrode connection and lamination encapsulation, obtain battery component, carry out the I-V test.
Need to prove that at this wherein operation (3) (7) (9) is used for the preparation of silicon-based film solar cells assembly, then do not need this three process for the preparation of general small size battery.
Test through I-V; With reference to accompanying drawing 2; Can find out: keep under the top battery intrinsic layer thickness same case of amorphous silicon/microcrystalline silicon tandem solar cell; Do not have the short circuit current and the power output of interlayer structure battery to be respectively 1.196A and 140.1W, of the present invention have interlayer structure battery short circuit short circuit current electric current and power output to be respectively 1.269A and 147.7W, and power output has improved 7.6W.

Claims (4)

1. silicon film solar batteries that possesses novel interlayer structure; It is characterized in that: in silicon film solar batteries, introduce interlayer structure; Interlayer structure comprises multilayer n type crystallite silica material or n type crystallite silicon nitride material structure, the perhaps composite construction of multilayer n type crystallite silica material and n type crystallite silicon nitride material.
2. the novel interlayer structure according to claim 1 is characterized in that described multilayer quantity is 2 to 10 layers.
3. the novel interlayer structure according to claim 1, the ranges of indices of refraction that it is characterized in that said novel intermediate layer is at 1.4-2.5, and total thickness is at 10-100nm.
4. a kind of silicon film solar batteries that possess novel interlayer structure according to claim 1; It is characterized in that described silicon film solar batteries comprises: amorphous silicon/amorphous silicon laminated solar cell; The amorphous silicon/microcrystalline silicon tandem solar cell, the lamination solar cell of sige alloy.
CN2012101849469A 2012-06-07 2012-06-07 Silicon thin film solar cell with novel intermediate layer structure Pending CN102694049A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102938430A (en) * 2012-12-07 2013-02-20 上海空间电源研究所 Silicon-based multi-junction tandem solar cell with flexible substrate and interlayer
CN102945886A (en) * 2012-12-07 2013-02-27 上海空间电源研究所 Composite layer-containing flexible substrate silicon-base multi-junction laminated solar battery
CN104319295A (en) * 2014-11-25 2015-01-28 云南师范大学 Method for preparing tunneling reflecting layer of silicon-based thin-film stacked solar cell
CN110176472A (en) * 2019-05-29 2019-08-27 武汉理工大学 Black phosphorus and crystal silicon overlapping thin film solar battery and its manufacturing method containing spectrally selective layer
CN111554762A (en) * 2020-05-05 2020-08-18 河南工业职业技术学院 Amorphous silicon/microcrystalline silicon laminated solar cell and manufacturing method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102005488A (en) * 2009-09-02 2011-04-06 韩国铁钢株式会社 Photovoltaic device and method for manufacturing the same
US20110180128A1 (en) * 2010-12-21 2011-07-28 Suntae Hwang Thin film solar cell

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102005488A (en) * 2009-09-02 2011-04-06 韩国铁钢株式会社 Photovoltaic device and method for manufacturing the same
US20110180128A1 (en) * 2010-12-21 2011-07-28 Suntae Hwang Thin film solar cell

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102938430A (en) * 2012-12-07 2013-02-20 上海空间电源研究所 Silicon-based multi-junction tandem solar cell with flexible substrate and interlayer
CN102945886A (en) * 2012-12-07 2013-02-27 上海空间电源研究所 Composite layer-containing flexible substrate silicon-base multi-junction laminated solar battery
CN102938430B (en) * 2012-12-07 2016-12-21 上海空间电源研究所 Comprise the silica-based many knot stacked solar cell, cascade solar cells of flexible substrate and the manufacture method thereof in intermediate layer
CN104319295A (en) * 2014-11-25 2015-01-28 云南师范大学 Method for preparing tunneling reflecting layer of silicon-based thin-film stacked solar cell
CN104319295B (en) * 2014-11-25 2016-12-07 云南师范大学 A kind of preparation method in silicon-based thin-film lamination solar cell tunnelling reflecting layer
CN110176472A (en) * 2019-05-29 2019-08-27 武汉理工大学 Black phosphorus and crystal silicon overlapping thin film solar battery and its manufacturing method containing spectrally selective layer
CN110176472B (en) * 2019-05-29 2021-03-09 武汉理工大学 Black phosphorus and crystalline silicon laminated thin-film solar cell containing spectrum selection layer and manufacturing method thereof
CN111554762A (en) * 2020-05-05 2020-08-18 河南工业职业技术学院 Amorphous silicon/microcrystalline silicon laminated solar cell and manufacturing method thereof

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Application publication date: 20120926