CN102938430B - Comprise the silica-based many knot stacked solar cell, cascade solar cells of flexible substrate and the manufacture method thereof in intermediate layer - Google Patents
Comprise the silica-based many knot stacked solar cell, cascade solar cells of flexible substrate and the manufacture method thereof in intermediate layer Download PDFInfo
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- CN102938430B CN102938430B CN201210521920.9A CN201210521920A CN102938430B CN 102938430 B CN102938430 B CN 102938430B CN 201210521920 A CN201210521920 A CN 201210521920A CN 102938430 B CN102938430 B CN 102938430B
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- battery
- intermediate layer
- solar cell
- flexible substrate
- silica
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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Abstract
The invention discloses that a kind of flexible substrate comprising intermediate layer is silica-based ties stacked solar cell, cascade solar cell more, this solar cell comprises battery, intermediate layer, non-crystalline silicon top battery at the bottom of the metal forming set gradually from down to up or polyester film flexible substrate, back reflector, microcrystal silicon or amorphous silicon germanium；And, top electrode, this top electrode is transparent conductive film；Wherein, described intermediate layer is the transparent conductive film between top battery and end battery, and the short wavelength light of 650nm ~ below 700nm is reflected by it, the long glistening light of waves transmission to 650nm ~ more than 700nm.A part can be entered the incident illumination of end battery and reflect the battery that returns back to top by this intermediate layer originally, increases the short-circuit current density of top battery.The battery structure that the present invention provides is conducive to improving the silica-based short-circuit current density tying stacked solar cell, cascade solar cell more, thus improves photoelectric transformation efficiency and the stability of battery.
Description
Technical field
The present invention relates to photovoltaic cell, comprise the silica-based many knot laminate films of flexible substrate in intermediate layer too particularly to a kind of
Positive electricity pond.
Background technology
In now widely used thin film solar cell, mainly use amorphous silicon thin-film materials, but non-crystalline silicon is thin
There are two major issues in film solar cell: (1) Staebler-Wronski effect makes stability test not ideal enough；(2) greater band gap, material
The long glistening light of waves in solar radiation spectrum is absorbed insufficient by material itself, limits the further raising of battery efficiency.In order to solve this
Two problems, people have extensively carried out amorphous silicon/microcrystalline silicon tandem solar cell and non-crystalline silicon/amorphous silicon germanium lamination too in recent years
The research work in positive electricity pond.Non-crystalline silicon (a-Si:H) material of its top Selection of Battery because there is stronger Staebler-Wronski effect, therefore
Need to reduce its intrinsic layer thickness as much as possible, but also bring the counter productive that photogenerated current reduces simultaneously, be easily formed top electricity
Pond limits, and leverages short-circuit current density and the photoelectric transformation efficiency of solar cell.Not increasing, top battery obsorbing layer is thick
On the premise of degree, the short-circuit current density how increasing top battery will play a key effect to improving battery overall performance.
Currently without explanation or the report of discovery technology similar to the present invention, the most not yet collect similar money
Material.
Summary of the invention
The purpose of the present invention is for the problem of above-mentioned existence, it is proposed that a kind of silica-based many knots of flexible substrate comprising intermediate layer
Stacked solar cell, cascade solar cell structure, this structure, on the premise of not increasing top cell thickness, can improve the short-circuit current density of top battery,
Thus improve efficiency and the stability of battery.
For reaching above-mentioned purpose, the invention provides the silica-based many knot lamination sun electricity of a kind of flexible substrate comprising intermediate layer
Pond, this solar cell comprises and sets gradually from down to up:
Metal forming or polyester film flexible substrate；
Back reflector；
Battery at the bottom of microcrystal silicon or amorphous silicon germanium；
Intermediate layer；
Non-crystalline silicon top battery；And
Top electrode, this top electrode is transparent conductive film；
Wherein, described intermediate layer be top battery and end battery between transparent conductive film, its to 650nm ~
The short wavelength light reflection of below 700nm, the long glistening light of waves transmission to 650nm ~ more than 700nm.The optical band gap in this intermediate layer between
Between 1.7eV ~ 2.5eV, thickness is between 1nm ~ 200nm.
The above-mentioned flexible substrate comprising intermediate layer is silica-based ties stacked solar cell, cascade solar cell more, and wherein, described intermediate layer is oxidation
Silicon layer, its chemical formula is SiOx, x value is between 1 ~ 2.
The above-mentioned flexible substrate comprising intermediate layer is silica-based ties stacked solar cell, cascade solar cell more, wherein, and the preparation in described intermediate layer
Method is that end battery preparation completed is placed in dry air oxidation formation.
The above-mentioned flexible substrate comprising intermediate layer is silica-based ties stacked solar cell, cascade solar cell more, and wherein, described dry air is
Refer to the humidity dry air less than 30%.Preferably, air humidity is less than 20%.Because higher humidity can affect the property of battery
Energy.
The operation principle of the present invention: owing to the refractive index of silica-base film materials several in stacked solar cell, cascade solar cell is the most close
(3.0 ~ 3.5), it is the lowest with the interface reflectance of the p layer of end battery to push up the n-layer of battery in laminated cell, and light is little at this interface
Reflected, be directly entered end battery, introduced SiOxMaterial is as intermediate layer so that the interface in top battery and intermediate layer to 650nm ~
The short wavelength light of below 700nm forms reflection, makes the light of a part return to push up battery, is again absorbed by top battery, improve top battery
Short-circuit current density.Bigger top Cell current density is beneficial to improve short-circuit current density and the stability of battery.
The intermediate layer that the laminated cell of the present invention is used, can increase its light path by the short wavelength light reflection of top battery transmission
So that fully absorbing, making the light entering end battery reduce, this just can increase the sub-battery current of laminated cell simultaneously
Join degree.Meanwhile, the effect improving battery electric property can also be played in intermediate layer, specifically, it is simply that as laminated cell
A part for middle composite tunnel knot, i.e. pushes up the electronics of battery and the composite bed in the hole of end battery.
The flexible substrate comprising intermediate layer of present invention offer is silica-based ties stacked solar cell, cascade solar cell more, electricity similar with prior art
Pond is compared, and improves the short-circuit current density of top battery, and the electricity conversion of battery is high, good stability.
Accompanying drawing explanation
Fig. 1 is the silica-based structural representations tying stacked solar cell, cascade solar cell of the flexible substrate comprising intermediate layer of the present invention more.
Detailed description of the invention
Below in conjunction with drawings and Examples, technical scheme is described further.
As it is shown in figure 1, the flexible substrate comprising intermediate layer of the present invention is silica-based ties stacked solar cell, cascade solar cell more, this solar cell
Comprise the metal forming set gradually from down to up or polyester film flexible substrate 11, back reflector 12, microcrystal silicon or amorphous silicon germanium
End battery 13, intermediate layer 14, non-crystalline silicon top battery 15；And, top electrode 16, this top electrode 16 is transparent conductive film；Wherein, institute
The intermediate layer 14 stated is the transparent conductive film between top battery 15 and end battery 13, and it is (excellent to 650nm ~ below 700nm
Select below 650nm) short wavelength light reflection, the long glistening light of waves transmission to 650nm ~ more than 700nm (preferably more than 700nm).
The preparation method of this solar cell is described by the following examples.
Embodiment binode laminated cell
The polyimide substrate that thickness is 75 μm prepares binode laminated cell according to following steps:
Step 1, uses magnetically controlled sputter method to deposit Ag/ZnO back reflector 12 in polyimide substrate 11.
Step 2, battery at the bottom of the amorphous silicon germanium of using plasma chemical gaseous phase deposition (PECVD) method deposition NIP structure
13, wherein N shell non-crystalline silicon reacting gas is hydrogen, silane and phosphine, and thickness is 10nm ~ 50nm, I layer non-crystalline silicon germanium layer reaction gas
Body is hydrogen, silane and germane, thickness be 150nm ~ 400nm, P layer nano-silicon reacting gas be hydrogen and silane, thickness is
10nm~50nm。
Step 3, takes out end battery 13 from vacuum equipment, places in drying cupboard (humidity is less than 30%) at room temperature
About 24 hours, prepare intermediate layer 14.
Step 4, the non-crystalline silicon top battery 15 of using plasma chemical gaseous phase deposition (PECVD) equipment deposition NIP structure,
Wherein N shell non-crystalline silicon reacting gas is hydrogen, silane and phosphine, thickness be 10 ~ 50nm, I layer amorphous silicon layer reacting gas be hydrogen
Gas and silane, thickness be 150 ~ 300nm, P layer nano-silicon reacting gas be hydrogen and silane, thickness is 10nm ~ 50nm.
Step 5, uses magnetically controlled sputter method deposition ITO(indium tin oxide) transparent conductive film is as top electrode 16.
The sample A comprising intermediate layer 14 for preparing of above-mentioned steps 3 will be used and do not use above-mentioned steps 3 to prepare (other
Part is identical) sample B at 25 DEG C, AM1.5 solar spectrum (1000W/m2Solar cell output characteristics test is carried out under), and
Quantum efficiency (QE) test is used to obtain top battery and the short-circuit current density of end battery.The result of two kinds of batteries such as table 1 below institute
Show:
The J-V test result of table 1 sample A and sample B
As can be known from Table 1, SiO is insertedxBehind intermediate layer, the short-circuit current density of top battery and end battery rises respectively
1.04mA/cm2And 0.69mA/cm2(end battery short circuit electric current density rises and thinning relevant after the oxidation of end battery p layer), and open a way
Voltage and fill factor, curve factor vary less, and the electricity conversion of battery is improved.
Although present disclosure has been made to be discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read foregoing, for the present invention's
Multiple amendment and replacement all will be apparent from.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (1)
1. the silica-based preparation methoies tying stacked solar cell, cascade solar cell of flexible substrate comprising intermediate layer, it is characterised in that the party more
Method includes sequentially forming from down to up:
Metal forming or polyester film flexible substrate (11)；
Back reflector (12)；
Battery (13) at the bottom of microcrystal silicon or amorphous silicon germanium；
Intermediate layer (14)；
Non-crystalline silicon top battery (15)；And
Top electrode (16), this top electrode (16) is transparent conductive film；
Wherein, described intermediate layer (14) is the transparent conductive film being positioned between top battery (15) and end battery (13), and it is right
The short wavelength light reflection of below 650nm, the long glistening light of waves transmission to more than 700nm；Described intermediate layer (14) is silicon oxide layer, its chemistry
Formula is SiOx, x value is between 1 ~ 2；The preparation method in described intermediate layer (14) is that end battery preparation completed is placed on
In dry air, oxidation is formed；Described dry air refers to the dry air that humidity is less than 30%.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210521920.9A CN102938430B (en) | 2012-12-07 | 2012-12-07 | Comprise the silica-based many knot stacked solar cell, cascade solar cells of flexible substrate and the manufacture method thereof in intermediate layer |
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| CN201210521920.9A CN102938430B (en) | 2012-12-07 | 2012-12-07 | Comprise the silica-based many knot stacked solar cell, cascade solar cells of flexible substrate and the manufacture method thereof in intermediate layer |
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| CN102938430A CN102938430A (en) | 2013-02-20 |
| CN102938430B true CN102938430B (en) | 2016-12-21 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103219429B (en) * | 2013-04-22 | 2016-06-01 | 浙江正泰太阳能科技有限公司 | Lamination solar cell and its preparation method |
| CN104319295B (en) * | 2014-11-25 | 2016-12-07 | 云南师范大学 | A kind of preparation method in silicon-based thin-film lamination solar cell tunnelling reflecting layer |
| CN108550644B (en) * | 2018-06-06 | 2019-10-25 | 东北大学 | Half lamination flexible silicon-based thin film solar battery of one kind and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101820007A (en) * | 2009-11-18 | 2010-09-01 | 湖南共创光伏科技有限公司 | High-conversion rate silicon and thin film compound type multijunction PIN solar cell and manufacturing method thereof |
| CN102097509A (en) * | 2010-11-24 | 2011-06-15 | 北京航空航天大学 | Design of five-layered structure of tandem thin-film amorphous silicon solar cell |
| CN101593779B (en) * | 2008-05-27 | 2011-07-20 | 韩国铁钢株式会社 | Tandem thin-film silicon solar cell and method for manufacturing the same |
| CN102217080A (en) * | 2008-11-19 | 2011-10-12 | 纽沙泰尔大学 | Multiple-junction photoelectric device and its production process |
| CN102694049A (en) * | 2012-06-07 | 2012-09-26 | 保定天威薄膜光伏有限公司 | Silicon thin film solar cell with novel intermediate layer structure |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101593779B (en) * | 2008-05-27 | 2011-07-20 | 韩国铁钢株式会社 | Tandem thin-film silicon solar cell and method for manufacturing the same |
| CN102217080A (en) * | 2008-11-19 | 2011-10-12 | 纽沙泰尔大学 | Multiple-junction photoelectric device and its production process |
| CN101820007A (en) * | 2009-11-18 | 2010-09-01 | 湖南共创光伏科技有限公司 | High-conversion rate silicon and thin film compound type multijunction PIN solar cell and manufacturing method thereof |
| CN102097509A (en) * | 2010-11-24 | 2011-06-15 | 北京航空航天大学 | Design of five-layered structure of tandem thin-film amorphous silicon solar cell |
| CN102694049A (en) * | 2012-06-07 | 2012-09-26 | 保定天威薄膜光伏有限公司 | Silicon thin film solar cell with novel intermediate layer structure |
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