CN104882498A - PERC solar cell - Google Patents
PERC solar cell Download PDFInfo
- Publication number
- CN104882498A CN104882498A CN201510246507.XA CN201510246507A CN104882498A CN 104882498 A CN104882498 A CN 104882498A CN 201510246507 A CN201510246507 A CN 201510246507A CN 104882498 A CN104882498 A CN 104882498A
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- China
- Prior art keywords
- solar cell
- layer
- front electrode
- open region
- perc solar
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 23
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 23
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 24
- 238000002161 passivation Methods 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 238000002474 experimental method Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910000632 Alusil Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
The invention discloses a PERC solar cell including a silicon sheet layer having PN junctions, and a passive layer, a silicon nitride film layer and an aluminum metal layer arranged on the back face of the silicon layer successively. The passive layer and the silicon nitride film layer are provided with open areas. The front face of the solar cell is provided with a front face electrode. The open areas are disposed exactly below the front-face electrode and the open areas are in a covering zone of the front-face electrode. By arranging the open areas exactly below the front-face electrode, two areas are combined together, so that low efficiency area of the cell is reduced and battery efficiency is improved. Experiments prove that the battery efficiency of the PERC solar cell is improved by 0.1 to 0.2% compared with a cell with a prior structure. An expected technical effect is achieved.
Description
Technical field
The present invention relates to a kind of PERC solar cell, belong to technical field of solar batteries.
Background technology
Conventional fossil fuel approach exhaustion day by day, in existing sustainable energy, solar energy is undoubtedly the most clean, the most general and most potential alternative energy source of one.Device of solar generating is also called solar cell or photovoltaic cell, solar energy can be directly changed into electric energy, and its electricity generating principle is the photovoltaic effect of based semiconductor PN junction.
Along with the development of science and technology, occurred localized contact back of the body passivation (PERC) solar cell, this is a kind of high performance solar batteries out newly developed, obtains the extensive concern of industry.Its core covers at the shady face aluminium oxide of silicon chip or silicon oxide film (5 ~ 100 nanometer), to play passivated surface, improves the effect of long-wave response, thus promote the conversion efficiency of battery.But, aluminium oxide or silica non-conductive, therefore need this film local openings so that aluminum metal contacts with silicon chip back surface, collected current.In addition, aluminum metal (normally aluminium paste), in high-temperature sintering process, can destroy the passivation of aluminium oxide or silica, therefore usually on aluminium oxide or silicon oxide film, will cover silicon nitride film again, play a protective role.The preparation method of existing PERC solar cell mainly comprises the steps: making herbs into wool, diffusion, back of the body polishing, etching and decontamination glass, backside deposition aluminium oxide or silicon oxide film, deposited silicon nitride diaphragm, front deposited silicon nitride antireflection layer, back side local openings, the positive back metal slurry of silk screen printing, sintering, can obtain solar cell.Therefore, the structure of existing PERC solar cell, see shown in accompanying drawing 1, comprises the silicon wafer layer 1 with PN junction, and is located at the passivation layer 2 at the silicon wafer layer back side, silicon nitride film layer 3 and aluminum metal layer 4 successively; Described passivation layer and silicon nitride film layer are provided with multiple open region 5 (or claiming localized contact zone), and are provided with multiple front electrode 6 in the front of solar cell.And in prior art, do not associate between above-mentioned open region and front electrode, concrete, shown in accompanying drawing 1, the overlay area 7 of open region 5 and front electrode is crisscross arranged.
Therefore, the research and development method that high efficiency PERC solar cell is those skilled in the art is all the time developed.
Summary of the invention
Goal of the invention of the present invention is to provide a kind of PERC solar cell.
To achieve the above object of the invention, the technical solution used in the present invention is: a kind of PERC solar cell, comprises the silicon wafer layer with PN junction, and is located at the passivation layer at the silicon wafer layer back side, silicon nitride film layer and aluminum metal layer successively; Described passivation layer and silicon nitride film layer are provided with open region; The front of solar cell is provided with front electrode; Described open region is positioned at immediately below front electrode, and described open region is positioned at the overlay area of front electrode.
Inventor studies discovery, and in the overlay area (or being called shading region) of front electrode, almost not having photo-generated carrier to produce, is the dead band of solar cell.In addition, in the open region on passivation layer and silicon nitride film layer, the Carrier recombination that alusil alloy brings is a lot; It is the poor efficiency district of battery.Therefore, above-mentioned two class regions are all the poor efficiency districts of PERC solar cell.
For the problems referred to above, inventor improves existing PERC solar battery structure, is located at open region immediately below front electrode, and 2 regions are united two into one; Thus decrease the poor efficiency district of battery, improve battery efficiency.
In technique scheme, described open region is positioned at the overlay area of front electrode.Namely the perspective plane of the overlay area of front electrode is greater than the perspective plane of open region, and the perspective plane of open region is positioned within the perspective plane of the overlay area of front electrode, and when making to overlook from front, open region is completely in the overlay area of front electrode.
Preferably, the quantity of described open region is identical with the quantity of front electrode, and each open region is all positioned at immediately below each front electrode, forms one_to_one corresponding structure.
In technique scheme, described open region is positioned at the overlay area of front electrode.
In technique scheme, described passivation layer is aluminium oxide or silicon oxide film layer.
In technique scheme, the thickness of described passivation layer is 5 ~ 100 nanometers.
Because technique scheme is used, the present invention compared with prior art has following advantages:
1, this invention exploits a kind of PERC solar cell of new construction, by open region is located at immediately below front electrode, 2 regions is united two into one, thus decreases the poor efficiency district of battery, improve battery efficiency; Experiment proves, relative to existing structure, the battery efficiency of PERC solar cell of the present invention promotes 0.1 ~ 0.2%, achieves beyond thought technique effect;
2, structure of the present invention is simple, and cost is lower, is suitable for applying.
Accompanying drawing explanation
Fig. 1 is the structural representation of PERC solar cell in background technology.
Fig. 2 is the structural representation of the embodiment of the present invention one.
Wherein: 1, silicon wafer layer; 2, passivation layer; 3, silicon nitride film layer; 4, aluminum metal layer; 5, open region; 6, front electrode; 7, the overlay area of front electrode.
Embodiment
Below in conjunction with embodiment, the present invention is further described.
Embodiment one:
Shown in Figure 2, a kind of PERC solar cell, comprises the silicon wafer layer 1 with PN junction, and is located at the passivation layer 2 at the silicon wafer layer back side, silicon nitride film layer 3 and aluminum metal layer 4 successively; Described passivation layer and silicon nitride film layer are provided with open region 5; The front of solar cell is provided with front electrode 6; Described open region is positioned at immediately below front electrode, and described open region is positioned at the overlay area of front electrode.
The quantity of described open region is identical with the quantity of front electrode, and each open region is all positioned at immediately below each front electrode, forms one_to_one corresponding structure.Described open region is positioned at the overlay area 7 of front electrode.
Described passivation layer is aluminium oxide or silicon oxide film layer.The thickness of described passivation layer is 50 nanometers.
Comparative example one:
Shown in Figure 1, a kind of PERC solar cell, comprises the silicon wafer layer 1 with PN junction, and is located at the passivation layer 2 at the silicon wafer layer back side, silicon nitride film layer 3 and aluminum metal layer 4 successively; Described passivation layer and silicon nitride film layer are provided with open region 5; The front of solar cell is provided with front electrode 6; Do not associate between above-mentioned open region and front electrode, concrete, shown in accompanying drawing 1, the overlay area 7 of open region 5 and front electrode is crisscross arranged.
Then, carry out electric performance test to the solar cell that embodiment and comparative example obtain, result is as follows:
| Embodiment one | Comparative example one | |
| Voc/V | 0.657 | 0.655 |
| Isc/A | 9.31 | 9.27 |
| FF | 78.61% | 78.56% |
| EFF | 20.12% | 19.96% |
As seen from the above table, compared with comparative example, the solar cell of the present embodiment is all significantly improved in open circuit voltage, fill factor, curve factor and battery efficiency etc., open circuit voltage improves 2 mV, short circuit current promotes 0.05A, fill factor, curve factor improves 0.05%, and battery efficiency improves 0.16%, achieves beyond thought effect.
Claims (5)
1. a PERC solar cell, comprises the silicon wafer layer (1) with PN junction, and is located at the passivation layer (2) at the silicon wafer layer back side, silicon nitride film layer (3) and aluminum metal layer (4) successively; Described passivation layer and silicon nitride film layer are provided with open region (5); The front of solar cell is provided with front electrode (6); It is characterized in that: described open region is positioned at immediately below front electrode; And described open region is positioned at the overlay area of front electrode.
2. PERC solar cell according to claim 1, is characterized in that: the quantity of described open region is identical with the quantity of front electrode, and each open region is all positioned at immediately below each front electrode, forms one_to_one corresponding structure.
3. PERC solar cell according to claim 2, is characterized in that: described open region is positioned at the overlay area of front electrode.
4. PERC solar cell according to claim 1, is characterized in that: described passivation layer is aluminium oxide or silicon oxide film layer.
5. the PERC solar cell according to claim 1 or 4, is characterized in that: the thickness of described passivation layer is 5 ~ 100 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510246507.XA CN104882498B (en) | 2015-05-14 | 2015-05-14 | A kind of PERC solar cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510246507.XA CN104882498B (en) | 2015-05-14 | 2015-05-14 | A kind of PERC solar cells |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104882498A true CN104882498A (en) | 2015-09-02 |
| CN104882498B CN104882498B (en) | 2018-02-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510246507.XA Active CN104882498B (en) | 2015-05-14 | 2015-05-14 | A kind of PERC solar cells |
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| Country | Link |
|---|---|
| CN (1) | CN104882498B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876495A (en) * | 2017-03-03 | 2017-06-20 | 浙江爱旭太阳能科技有限公司 | A kind of p-type PERC double-sided solar batteries and preparation method thereof |
| CN109273536A (en) * | 2018-12-05 | 2019-01-25 | 苏州阿特斯阳光电力科技有限公司 | Solar battery and photovoltaic module |
| WO2020082756A1 (en) * | 2018-10-24 | 2020-04-30 | 苏州腾晖光伏技术有限公司 | Perc battery back passivation structure and preparation method therefor |
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|---|---|---|---|---|
| CN202076275U (en) * | 2011-02-15 | 2011-12-14 | 中山大学 | Crystalline silicon solar battery with selective emitter structure |
| CN102403399A (en) * | 2011-07-30 | 2012-04-04 | 常州天合光能有限公司 | Preparation method and structure of one-film and multipurpose masked texturing solar cell |
| CN102683493A (en) * | 2012-05-27 | 2012-09-19 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of N-type crystalline silicon double-sided back contact solar cell |
| CN102751371A (en) * | 2012-07-06 | 2012-10-24 | 浙江正泰太阳能科技有限公司 | Solar thin film battery and manufacturing method thereof |
| CN103344899A (en) * | 2013-06-28 | 2013-10-09 | 苏州阿特斯阳光电力科技有限公司 | Method for calibrating photoelectric voltage current characteristic parameters of back-contact solar battery |
| TW201414002A (en) * | 2008-10-22 | 2014-04-01 | Ind Tech Res Inst | Method of manufacturing back electrode of silicon bulk solar cell |
| CN203812893U (en) * | 2014-04-15 | 2014-09-03 | 苏州阿特斯阳光电力科技有限公司 | N-type back-junction solar cell |
| CN204045609U (en) * | 2014-09-12 | 2014-12-24 | 合肥海润光伏科技有限公司 | A kind of back of the body passivation PERC crystal silicon solar energy battery |
| CN204144271U (en) * | 2014-11-04 | 2015-02-04 | 中国东方电气集团有限公司 | A kind of monocrystaline silicon solar cell with passivation structure on back |
-
2015
- 2015-05-14 CN CN201510246507.XA patent/CN104882498B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201414002A (en) * | 2008-10-22 | 2014-04-01 | Ind Tech Res Inst | Method of manufacturing back electrode of silicon bulk solar cell |
| CN202076275U (en) * | 2011-02-15 | 2011-12-14 | 中山大学 | Crystalline silicon solar battery with selective emitter structure |
| CN102403399A (en) * | 2011-07-30 | 2012-04-04 | 常州天合光能有限公司 | Preparation method and structure of one-film and multipurpose masked texturing solar cell |
| CN102683493A (en) * | 2012-05-27 | 2012-09-19 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of N-type crystalline silicon double-sided back contact solar cell |
| CN102751371A (en) * | 2012-07-06 | 2012-10-24 | 浙江正泰太阳能科技有限公司 | Solar thin film battery and manufacturing method thereof |
| CN103344899A (en) * | 2013-06-28 | 2013-10-09 | 苏州阿特斯阳光电力科技有限公司 | Method for calibrating photoelectric voltage current characteristic parameters of back-contact solar battery |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876495A (en) * | 2017-03-03 | 2017-06-20 | 浙江爱旭太阳能科技有限公司 | A kind of p-type PERC double-sided solar batteries and preparation method thereof |
| WO2020082756A1 (en) * | 2018-10-24 | 2020-04-30 | 苏州腾晖光伏技术有限公司 | Perc battery back passivation structure and preparation method therefor |
| CN109273536A (en) * | 2018-12-05 | 2019-01-25 | 苏州阿特斯阳光电力科技有限公司 | Solar battery and photovoltaic module |
| CN109273536B (en) * | 2018-12-05 | 2023-09-15 | 苏州阿特斯阳光电力科技有限公司 | Solar cell and photovoltaic module |
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| Publication number | Publication date |
|---|---|
| CN104882498B (en) | 2018-02-16 |
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Address after: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee after: CSI Cells Co.,Ltd. Patentee after: Funing atlas sunshine Power Technology Co., Ltd Address before: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee before: CSI Cells Co.,Ltd. Patentee before: CSI-GCL SOLAR MANUFACTURING (YANCHENG) Co.,Ltd. |
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