CN106876495A - A kind of p-type PERC double-sided solar batteries and preparation method thereof - Google Patents
A kind of p-type PERC double-sided solar batteries and preparation method thereof Download PDFInfo
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 36
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 36
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 121
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 121
- 229940037003 alum Drugs 0.000 claims abstract description 113
- 239000004411 aluminium Substances 0.000 claims abstract description 91
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 74
- 239000010703 silicon Substances 0.000 claims abstract description 74
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 40
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 40
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000004332 silver Substances 0.000 claims abstract description 34
- 229910052709 silver Inorganic materials 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 22
- 238000007639 printing Methods 0.000 claims abstract description 17
- 238000007493 shaping process Methods 0.000 claims abstract description 7
- 239000002002 slurry Substances 0.000 claims abstract description 7
- 230000010412 perfusion Effects 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 72
- 238000007650 screen-printing Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 5
- 230000011218 segmentation Effects 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000011267 electrode slurry Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 238000007641 inkjet printing Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 230000009466 transformation Effects 0.000 abstract description 9
- 230000005611 electricity Effects 0.000 description 9
- 238000000151 deposition Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000006872 improvement Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
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- 238000011160 research Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000003854 Surface Print Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
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- H—ELECTRICITY
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Abstract
The invention discloses a kind of p-type PERC double-sided solar batteries and preparation method thereof, the solar cell includes the back electrode for setting gradually from bottom to top, back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type silicon, front side silicon nitride film and positive silver electrode, the solar cell is overleaf further opened with lbg area, perfusion aluminum slurry is printed in lbg area, form back of the body aluminum strip, described back electrode is made up of the silver-colored primary gate electrode of the back of the body that material is silver and the back of the body aluminium pair gate electrode that material is aluminium, back of the body aluminium pair gate electrode prints shaping with the back of the body aluminum strip one in lbg area, back of the body aluminium pair gate electrode is the double-decker that two-layer back of the body alum gate line superposition printing is formed, it is internal layer back of the body alum gate line positioned at the back of the body alum gate line of internal layer, it is outer layer back of the body alum gate line positioned at the back of the body alum gate line of outer layer.The solar cell can improve photoelectric transformation efficiency.The present invention discloses the preparation method of solar cell.
Description
Technical field
The present invention relates to technical field of solar batteries, a kind of p-type PERC double-sided solar batteries and its system are specifically referred to
Preparation Method.
Background technology
Crystal silicon solar batteries are a kind of effectively absorption solar radiant energies, and electricity is converted optical energy into using photovoltaic effect
The device of energy, when solar irradiation is in semiconductor P-N junction, forms new hole-electron pair, empty in the presence of P-N junction electric field
Cave flows to P areas by N areas, and electronics flows to N areas by P areas, and electric current is just formed after connecting circuit.
Conventional crystalline silicon solar cell substantially only with front passivating technique, is sunk in front side of silicon wafer with the mode of PECVD
One layer of silicon nitride of product, reduces recombination rate of few son on preceding surface, can significantly lift the open-circuit voltage of crystal silicon battery and short
Road electric current, so as to lift the photoelectric transformation efficiency of crystal silicon solar battery.
With the requirement more and more higher of the photoelectric transformation efficiency to crystal silicon battery, people begin one's study PERC the back of the body passivation sun
Battery technology.The focus of current industry main flow producer concentrates on the volume production of one side PERC solar cells, and for two-sided PERC
Solar cell is also only the research that some research institutions do in laboratory.
For two-sided PERC solar cells, because photoelectric transformation efficiency is high, while two-sided absorption sunshine, generated energy is more
Height, in actual applications with bigger use value.
The content of the invention
An object of the present invention is to provide a kind of p-type PERC double-sided solar batteries, and the solar cell is by electricity
One layer of back of the body alum gate line is republished on the back of the body alum gate line at the pond back side to improve the photoelectric transformation efficiency of solar cell.
What this purpose of the invention was realized by the following technical solutions：A kind of p-type PERC double-sided solar batteries,
Including the back electrode, back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type silicon, the front side silicon nitride silicon that set gradually from bottom to top
Film and positive silver electrode, described positive silver electrode is silver-colored positive silver pair gate electrode group by positive silver-colored primary gate electrode and material that material is silver
Into positive silver pair gate electrode is perpendicular with positive silver-colored primary gate electrode, and described back electrode is silver-colored back of the body silver primary gate electrode and material by material
Expect the back of the body aluminium pair gate electrode composition for aluminium, back of the body aluminium pair gate electrode and the silver-colored primary gate electrode of the back of the body are perpendicular, and the solar cell is in the back of the body
Face is further opened with opening after the back side silicon nitride, backside oxide aluminium film until the lbg area of P-type silicon, lbg area
Interior printing perfusion aluminum slurry, forms back of the body aluminum strip, carries on the back aluminium pair gate electrode and is molded with the back of the body aluminum strip one printing in lbg area, the back of the body
Aluminium pair gate electrode is connected by carrying on the back aluminum strip with P-type silicon, it is characterised in that：Described back of the body aluminium pair gate electrode is that two-layer back of the body alum gate line is folded
Plus the double-decker that printing is formed, the back of the body alum gate line positioned at internal layer is internal layer back of the body alum gate line, and the back of the body alum gate line positioned at outer layer is outer
Layer back of the body alum gate line.
Two-sided PERC solar cells of the invention on the back of the body alum gate line of cell backside by republishing one layer of back of the body alum gate
Line, is the overlaying structure of two-layer back of the body alum gate line, increases the height of back of the body aluminium pair gate electrode, makes incident ray formation on back of the body alum gate line
One or many is reflected, and reflected light is again incident in solar cell, increases the solar energy that cell backside is received, while
Increase the electric conductivity of back of the body aluminium pair gate electrode, reduce the string resistance of battery.
In the present invention, the lbg area be arranged in parallel or is vertically arranged with back of the body aluminium pair gate electrode.
As the presently preferred embodiments, in the present invention, the width of the internal layer back of the body alum gate line is 30~500 microns, optimal width
Spend is 50~250 microns.
The width of the outer layer back of the body alum gate line is 30~500 microns, and optimal width is 50~250 microns.
The height of the internal layer back of the body alum gate line is 3~30 microns.
The height of the outer layer back of the body alum gate line is 1~30 micron.
The thickness of the back side silicon nitride is 20~500nm, and optimal thickness is 100~200nm.
The thickness of the backside oxide aluminium film is 2~50nm, and optimal thickness is 5~30nm.
The silver-colored primary gate electrode of the back of the body is continuous straight grid line or segmentation grid line, the radical of the back of the body aluminium pair gate electrode for 30~
500, optimal radical is 80~220 microns.
In the present invention, the width of internal layer back of the body alum gate line and the width of outer layer back of the body alum gate line can be with identical, it is also possible to different.
In the present invention, the lbg area is multiple, and the pattern in lbg area is that the width in lbg area is 10
~500 microns, the spacing between adjacent laser slotted zones is 0.5~50mm.
The present invention can do following improvement：Also print the alum gate housing that a loop material matter is aluminium, institute in the periphery of the back electrode
State alum gate housing to be connected with the silver-colored primary gate electrode of the corresponding back of the body and back of the body aluminium pair gate electrode respectively, described alum gate housing is used for electricity
One transmission paths of sub many offers.
In solar cell printing process, because the viscosity of aluminium paste is larger, the line width of half tone is again narrow, can go out once in a while
The situation of the existing disconnected grid of alum gate.The disconnected grid of alum gate can cause the image that EL is tested the disconnected grid of black occur, and the photoelectricity of battery can be influenceed to turn again
Change efficiency.The present invention sets up a circle alum gate housing in the periphery of back electrode, and a transmission paths are provided electron more, prevents aluminium
EL tests disconnected grid and the low problem of photoelectric transformation efficiency that the disconnected grid of grid are caused.Alum gate housing carries on the back silver-colored primary gate electrode with corresponding respectively
It is connected with back of the body aluminium pair gate electrode, there can be lbg area under alum gate housing, is connected with P-type silicon by lbg area, aluminium
Grid housing can also not have lbg area.
Compared with prior art, solar cell of the invention can greatly improve cell photoelectric conversion efficiency, equipment investment
Low cost, process is simple, and it is good with current production line compatibility.
Experiment is proved, after solar cell of the present invention can be using double-deck back of the body alum gate cable architecture, the opto-electronic conversion of cell backside
Efficiency (absolute value) improves 0.03%~0.2%, comprehensive photoelectric transformation efficiency (absolute value) raising at battery front side and the back side
0.02%~0.18%.
The second object of the present invention is to provide the preparation method of aforementioned p-type PERC double-sided solar batteries.
What this purpose of the invention was realized by the following technical solutions：Aforementioned p-type PERC double-sided solar batteries
Preparation method, it is characterised in that the method comprises the following steps：
(1) matte is formed in front side of silicon wafer and the back side, the silicon chip is P-type silicon；
(2) it is diffused in the front side of silicon wafer, forms N-type silicon, i.e. N-type emitter stage；
(3) removal diffusion process is formed phosphorosilicate glass and periphery P N knots；
(4) silicon chip back side is polished, forms the back surface of high reflectance；
(5) backside oxide aluminium film is deposited in silicon chip back side；
(6) in the backside deposition back side silicon nitride of pellumina；
(7) front side silicon nitride film is deposited in the front of N-type silicon；
(8) lbg is carried out to silicon chip back side, is opened after back side silicon nitride, backside oxide aluminium film until silicon chip, shape
Into lbg area；
(9) back of the body silver primary gate electrode of back electrode is printed using silk-screen printing in the silicon chip back side；
(10) internal layer back of the body alum gate line is printed using silk-screen printing in the silicon chip back side, in printing internal layer back of the body alum gate line
Aluminum slurry is printed in lbg area simultaneously, back of the body aluminum strip, back of the body aluminum strip and internal layer back of the body alum gate line one printing shaping is formed；
(11) outer layer back of the body alum gate line, outer layer back of the body aluminium are printed using silk-screen printing in the outer surface of internal layer back of the body alum gate line
The two-layer back of the body alum gate line that grid line and internal layer back of the body alum gate line are formed is the back of the body aluminium pair gate electrode of back electrode；
(12) silk-screen printing or ink-jetting style print positive electrode slurry are used in the front of the front side silicon nitride film；
(13) high temperature sintering is carried out to silicon chip, back electrode and positive silver electrode is formed；
(14) anti-LID annealings are carried out to silicon chip, solar cell is formed.
Wherein, step (7) can also occur to be carried on the back in silicon chip in step (5) in the front deposition front side silicon nitride film of N-type silicon
Before the deposited oxide aluminium film of face, step (4) can also be saved.
The preparation method is easy to operate, good with current production line compatibility.
Brief description of the drawings
The present invention is described in further detail with reference to the accompanying drawings and detailed description.
Fig. 1 is the overall structure sectional view of p-type PERC double-sided solar batteries of the present invention；
Fig. 2 is the plan of back electrode in p-type PERC double-sided solar batteries of the present invention；
Fig. 3 is the sectional view of back of the body aluminium pair gate electrode in p-type PERC double-sided solar batteries of the present invention, display outer layer back of the body alum gate
Position relationship and annexation between line, internal layer back of the body alum gate line and back of the body aluminum strip；
Fig. 4 is the plan of the back electrode of another structure in p-type PERC double-sided solar batteries of the present invention；
Fig. 5 is the plan of the back electrode of another structure in p-type PERC double-sided solar batteries of the present invention；
Fig. 6 is the plan of the back electrode of another structure in p-type PERC double-sided solar batteries of the present invention；
Fig. 7 is the plan of the back electrode of another structure in p-type PERC double-sided solar batteries of the present invention.
Description of reference numerals
1st, back electrode, 11, the silver-colored primary gate electrode of the back of the body；12nd, back of the body aluminium pair gate electrode；121st, internal layer back of the body alum gate line；122nd, the outer layer back of the body
Alum gate line；2nd, lbg area, 3, back side silicon nitride, 4, backside oxide aluminium film, 5, P-type silicon, 6, N-type silicon, 7, front side silicon nitride
Silicon fiml, 8, positive silver electrode, 81, positive silver primary gate electrode；82nd, positive silver pair gate electrode；9th, aluminum strip, 10, alum gate housing are carried on the back.
Specific embodiment
Embodiment one
A kind of p-type PERC double-sided solar batteries as shown in Figure 1 to Figure 3, including the back of the body electricity for setting gradually from bottom to top
Pole 1, back side silicon nitride 3, backside oxide aluminium film 4, P-type silicon 5, N-type silicon 6, front side silicon nitride film 7 and positive silver electrode 8, positive silver electricity
Pole 8 is made up of the positive silver pair gate electrode 82 that positive silver-colored primary gate electrode 81 and material that material is silver are silver, positive silver pair gate electrode 82 with
Positive silver primary gate electrode 81 is perpendicular, and back electrode 1 is the back of the body aluminium pair grid electricity of aluminium by carry on the back silver-colored primary gate electrode 11 and the material that material is silver
Pole 12 constitutes, and back of the body aluminium pair gate electrode 12 and the silver-colored primary gate electrode 11 of the back of the body are perpendicular, and back of the body aluminium pair gate electrode 12 also referred to as carries on the back aluminium pair grid
Electrode.
Solar cell is overleaf further opened with opening after back side silicon nitride 3, backside oxide aluminium film 4 until P-type silicon 5
Lbg area 2, lbg area 2 be arranged in parallel with back of the body aluminium pair gate electrode 12, printing perfusion aluminum slurry in lbg area 2,
Formation back of the body aluminum strip 9, back electrode 1 is made up of the silver-colored primary gate electrode 11 of the back of the body that material is silver and the back of the body aluminium pair gate electrode 12 that material is aluminium,
Back of the body aluminium pair gate electrode 12 prints shaping with the one of back of the body aluminum strip 9 in lbg area 2, and back of the body aluminium pair gate electrode 12 is by carrying on the back aluminum strip 9
It is connected with P-type silicon 5, back of the body aluminium pair gate electrode 12 is the double-decker that two-layer back of the body alum gate line superposition printing is formed, positioned at internal layer
Back of the body alum gate line is internal layer back of the body alum gate line 121, is outer layer back of the body alum gate line 122, internal layer back of the body alum gate line 121 positioned at the back of the body alum gate line of outer layer
With the back of the body aluminium pair gate electrode 12 that outer layer back of the body alum gate line 12 constitutes bilayer.Back of the body aluminium pair gate electrode 12 can cover multiple laser and open below
Groove area 2.
Back of the body aluminum strip 9 in the present embodiment and the one printing shaping of internal layer back of the body alum gate line 121, its actually internal layer back of the body alum gate line
121 part, during printing internal layer back of the body alum gate line 121, aluminium paste can be flowed into lbg area 2 and form back of the body aluminum strip 9, print
Double-deck back of the body aluminium is formed after internal layer back of the body alum gate line 121 in the outer surface printing outer layer back of the body alum gate line 122 of internal layer back of the body alum gate line 121 again
Grid line structure.
In the present embodiment, the back of the body aluminium pair gate electrode 12 of solar cell carries on the back the overlaying structure of alum gate line using two-layer, can
Increase the height of back of the body aluminium pair gate electrode, incident ray is formed one or many on back of the body alum gate line and reflect, reflected light re-incident
To in solar cell, increase the solar energy that cell backside is received, while increasing the electric conductivity of back of the body aluminium pair gate electrode, drop
The string resistance of low battery, improves the photoelectric transformation efficiency of double-sided solar battery.
The material of the backside oxide aluminium film 4 of the present embodiment is alundum (Al2O3) (Al2O3), back side silicon nitride 3 and front
The material of silicon nitride film 7 is identical, is silicon nitride (Si3N4).The pattern in lbg area 2 is linear pattern, it is also possible to select line
Segmentation or dotted-line style or circle dot mode.The width in lbg area 2 is 30 microns, and width can also take between 10~500 microns
Value, preferably 30~60 microns.
In the present embodiment, the silver-colored primary gate electrode 11 of the back of the body is continuous straight grid line, and the radical of back of the body aluminium pair gate electrode 12 is 150, interior
The width of layer back of the body alum gate line 121 is 500 microns, is highly 3 microns, and the width of outer layer back of the body alum gate line 122 carries on the back alum gate line with internal layer
121 width is equal, is also 500 microns, is highly 30 microns, and the thickness of back side silicon nitride 3 is 20nm, backside oxide aluminium film
4 thickness is 2nm.
Wherein, the width of internal layer back of the body alum gate line 121 can also in 30~500 micrometer ranges value, highly can also be 3
Value in~30 micrometer ranges, the width of outer layer back of the body alum gate line 122 can also in 30~500 micrometer ranges value, height
Can in 3~30 micrometer ranges value, the thickness of back side silicon nitride 3 can also in the range of 20~500nm value, it is optimal
Thickness range be 100~200nm, the thickness of backside oxide aluminium film 4 can also in the range of 2~50nm value, optimal thickness
Degree scope is 5~30nm.
Used as the conversion of the present embodiment, back electrode can also be using the structure of Fig. 4, and now lbg area 2 is multiple, is in
Line segment shape, each multiple lbg areas 2 of back of the body aluminium pair gate electrode 12 covering below.
Used as the improvement of back electrode shown in Fig. 2, back electrode can also be using the structure of Fig. 5, and now, the periphery of back electrode is also
The alum gate housing 10 that a loop material matter is aluminium is printed, alum gate housing 10 carries on the back silver-colored primary gate electrode 11 and back of the body aluminium pair grid electricity with corresponding respectively
Pole 12 is connected, and alum gate housing 10 is used to provide a transmission paths electron more, and the EL tests for preventing the disconnected grid of alum gate from causing are disconnected
Grid and the low problem of photoelectric transformation efficiency.Alum gate housing 10 times is also parallel in Fig. 5 offers lbg area 2, is opened by laser
Groove area 2 is connected with P-type silicon.Alum gate housing 10 can also be without lbg area 2.Alum gate housing 10 shown in Fig. 5 is rectangle frame,
It is connected with the corresponding many silver-colored primary gate electrodes 11 of the back of the body and back of the body aluminium pair gate electrode 12 respectively, alum gate housing 10 can also be according to back of the body electricity
The structure that pole shape selection is adapted to therewith, such as rectangle frame or square-shaped frame or circular frame or oval frame.
Used as the conversion of the present embodiment, back electrode can also use the structure of Fig. 6, now lbg area 2 and back of the body aluminium pair
Gate electrode 12 is vertically arranged, and lbg area 2 is multiple, and the pattern in lbg area is linear pattern, adjacent lbg area
Between spacing be 0.9mm, the spacing can also in 0.5~50mm value, preferred scope is 0.8-30mm.
Used as the improvement of back electrode shown in Fig. 6, back electrode can also be using the structure of Fig. 7, and now, the periphery of back electrode is also
The alum gate housing 10 that a loop material matter is aluminium is printed, alum gate housing 10 carries on the back silver-colored primary gate electrode 11 and back of the body aluminium pair grid electricity with corresponding respectively
Pole 12 is connected.The lbg area 2 perpendicular with alum gate housing 10 is further opened with Fig. 7 under alum gate housing 10, by laser
Slotted zones 2 are connected with P-type silicon.Alum gate housing 10 can also be without lbg area 2.
The preparation method of aforementioned p-type PERC double-sided solar batteries, comprises the following steps：
(1) matte is formed in front side of silicon wafer and the back side, silicon chip is P-type silicon 5；
(2) it is diffused in front side of silicon wafer, forms N-type silicon 6, i.e. N-type emitter stage；
(3) removal diffusion process is formed phosphorosilicate glass and periphery P N knots；
(4) silicon chip back side is polished, forms the back surface of high reflectance；
(5) in silicon chip back side deposition backside oxide aluminium film 4；
(6) in the backside deposition back side silicon nitride 3 of pellumina；
(7) front side silicon nitride film 7 is deposited in the front of N-type silicon 6；
(8) lbg is carried out to silicon chip back side, is opened after back side silicon nitride 3, backside oxide aluminium film 4 until silicon chip,
Form lbg area 2；
(9) back of the body silver primary gate electrode 11 of back electrode 1 is printed using silk-screen printing in silicon chip back side；
(10) internal layer back of the body alum gate line 121 is printed using silk-screen printing in silicon chip back side, in printing internal layer back of the body alum gate line 121
While in the lbg area 2 printing aluminum slurry, form back of the body aluminum strip 9, back of the body aluminum strip 9 prints with the one of internal layer back of the body alum gate line 121
Shaping, the part of back of the body aluminum strip 9 its actually internal layer back of the body alum gate line 121, during printing internal layer back of the body alum gate line 121, aluminium paste can be flowed into
Back of the body aluminum strip 9 is formed in lbg area 2；
(11) outer layer back of the body alum gate line 122, outer layer back of the body alum gate are printed using silk screen in the outer surface of internal layer back of the body alum gate line 121
The two-layer back of the body alum gate line that line 122 and internal layer back of the body alum gate line 121 are formed is the back of the body aluminium pair gate electrode 12 of back electrode 1；
(12) in the front of front side silicon nitride film 7 using silk-screen printing come print positive electrode slurry, it would however also be possible to employ ink-jet
Mode is printed；
(13) high temperature sintering is carried out to silicon chip, back electrode 1 and positive silver electrode 8 is formed；
(14) anti-LID annealings are carried out to silicon chip, solar cell is formed.
Wherein, step (7) can also occur in step (5) in silicon chip in the front deposition front side silicon nitride film 7 of N-type silicon 6
Before backside deposition backside oxide aluminium film 4, step (4) can also be saved.
Embodiment two
The embodiment two and the difference of embodiment one of p-type PERC double-sided solar batteries of the present invention be, embodiment two
In, the silver-colored primary gate electrode 11 of the back of the body is segmentation grid line, and the radical of back of the body aluminium pair gate electrode 12 is 100, the width of internal layer back of the body alum gate line 121
It is 200 microns, is highly 8 microns, the width of outer layer back of the body alum gate line 122 is 150 microns, is highly 8 microns, back side silicon nitride
3 thickness is 150nm, and the thickness of backside oxide aluminium film 4 is 6nm.
Embodiment three
The embodiment three and the difference of embodiment one of p-type PERC double-sided solar batteries of the present invention be, embodiment three
In, the silver-colored primary gate electrode 11 of the back of the body is continuous straight grid line, and the radical of back of the body aluminium pair gate electrode 12 is 180, the width of internal layer back of the body alum gate line 121
It is 300 microns to spend, and is highly 12 microns, and the width of outer layer back of the body alum gate line 122 is 350 microns, is highly 6 microns, back side silicon nitride
The thickness of silicon fiml 3 is 140nm, and the thickness of backside oxide aluminium film 4 is 15nm.
Example IV
The example IV and the difference of embodiment one of p-type PERC double-sided solar batteries of the present invention be, example IV
In, the silver-colored primary gate electrode 11 of the back of the body is segmentation grid line, and the radical of back of the body aluminium pair gate electrode 12 is 250, the width of internal layer back of the body alum gate line 121
It is 100 microns, is highly 16 microns, the width of outer layer back of the body alum gate line 122 is 160 microns, is highly 4 microns, back side silicon nitride silicon
The thickness of film 3 is 180nm, and the thickness of backside oxide aluminium film 4 is 25nm.
Embodiment five
The embodiment five and the difference of embodiment one of p-type PERC double-sided solar batteries of the present invention be, embodiment five
In, the silver-colored primary gate electrode 11 of the back of the body is continuous straight grid line, and the radical of back of the body aluminium pair gate electrode 12 is 500, the width of internal layer back of the body alum gate line 121
It is 40 microns to spend, and is highly 30 microns, and the width of outer layer back of the body alum gate line 122 is equal with the width that internal layer carries on the back alum gate line 121, also for
40 microns, be highly 1 micron, and the thickness of back side silicon nitride 3 is 250nm, and the thickness of backside oxide aluminium film 4 is 30nm.
The above embodiment of the present invention is not limiting the scope of the present invention, and embodiments of the present invention are not limited to
This, all this kind the above of the invention, according to the ordinary technical knowledge and customary means of this area, is not departing from this
Under the premise of inventing above-mentioned basic fundamental thought, the modification of other diversified forms made to said structure of the present invention, replace or become
More, all should fall within the scope and spirit of the invention.
Claims (10)
1. a kind of p-type PERC double-sided solar batteries, including back electrode, back side silicon nitride, the back of the body for setting gradually from bottom to top
Face pellumina, P-type silicon, N-type silicon, front side silicon nitride film and positive silver electrode, described positive silver electrode is silver-colored positive silver by material
Primary gate electrode and material are the positive silver pair gate electrode composition of silver, and positive silver pair gate electrode is perpendicular with positive silver-colored primary gate electrode, described
Back electrode by the silver-colored primary gate electrode of the back of the body that material is silver and material for the back of the body aluminium pair gate electrode of aluminium is constituted, back of the body aluminium pair gate electrode and back of the body silver
Primary gate electrode is perpendicular, and the solar cell is overleaf further opened with opening the back side silicon nitride, backside oxide aluminium film
Afterwards until P-type silicon lbg area, in lbg the area in print perfusion aluminum slurry, formed the back of the body aluminum strip, the back of the body aluminium pair gate electrode and
Back of the body aluminum strip one printing shaping in lbg area, back of the body aluminium pair gate electrode is connected by carrying on the back aluminum strip with P-type silicon, and its feature exists
In：Described back of the body aluminium pair gate electrode is the double-decker that two-layer back of the body alum gate line superposition printing is formed, positioned at the back of the body alum gate line of internal layer
It is outer layer back of the body alum gate line positioned at the back of the body alum gate line of outer layer for internal layer carries on the back alum gate line.
2. p-type PERC double-sided solar batteries as claimed in claim 1, it is characterised in that：The lbg area and back of the body aluminium
Secondary gate electrode be arranged in parallel or is vertically arranged.
3. p-type PERC double-sided solar batteries as claimed in claim 1, it is characterised in that：The internal layer carries on the back the width of alum gate line
It is 30~500 microns to spend, and is highly 3~30 microns.
4. p-type PERC double-sided solar batteries as claimed in claim 1, it is characterised in that：The outer layer carries on the back the width of alum gate line
It is 30~500 microns to spend, and is highly 1~30 micron.
5. p-type PERC double-sided solar batteries as claimed in claim 1, it is characterised in that：The thickness of the back side silicon nitride
It is 20~500nm to spend, and the thickness of the backside oxide aluminium film is 2~50nm.
6. p-type PERC double-sided solar batteries as claimed in claim 1, it is characterised in that：The silver-colored primary gate electrode of the back of the body is company
Continue straight grid line or segmentation grid line, the radical of the back of the body aluminium pair gate electrode is 30~500.
7. p-type PERC double-sided solar batteries as claimed in claim 2, it is characterised in that：The lbg area is multiple,
The pattern in lbg area is line segment formula or linear or dotted-line style or circle dot mode.
8. p-type PERC double-sided solar batteries as claimed in claim 7, it is characterised in that：The width in the lbg area
It it is 10~500 microns, the spacing between adjacent laser slotted zones is 0.5~50mm.
9. p-type PERC double-sided solar batteries as described in any one of claim 1 to 8, it is characterised in that：The back electrode
The alum gate housing that a loop material matter is aluminium is also printed in periphery, and the alum gate housing carries on the back silver-colored primary gate electrode and back of the body aluminium pair with corresponding respectively
Gate electrode is connected, and described alum gate housing is used to provide a transmission paths electron more.
10. the preparation method of the p-type PERC double-sided solar batteries as described in any one of claim 1 to 9, it is characterised in that
The method comprises the following steps：
(1) matte is formed in front side of silicon wafer and the back side, the silicon chip is P-type silicon；
(2) it is diffused in the front side of silicon wafer, forms N-type silicon, i.e. N-type emitter stage；
(3) removal diffusion process is formed phosphorosilicate glass and periphery P N knots；
(4) silicon chip back side is polished, forms the back surface of high reflectance；
(5) backside oxide aluminium film is deposited in silicon chip back side；
(6) in the backside deposition back side silicon nitride of pellumina；
(7) front side silicon nitride film is deposited in the front of N-type silicon；
(8) lbg is carried out to silicon chip back side, is opened after back side silicon nitride, backside oxide aluminium film until silicon chip, forms and swash
Light slotted zones；
(9) back of the body silver primary gate electrode of back electrode is printed using silk-screen printing in the silicon chip back side；
(10) internal layer back of the body alum gate line is printed using silk-screen printing in the silicon chip back side, while internal layer back of the body alum gate line is printed
Aluminum slurry is printed in lbg area, back of the body aluminum strip, back of the body aluminum strip and internal layer back of the body alum gate line one printing shaping is formed；
(11) outer layer back of the body alum gate line, outer layer back of the body alum gate line are printed using silk-screen printing in the outer surface of internal layer back of the body alum gate line
The two-layer back of the body alum gate line formed with internal layer back of the body alum gate line is the back of the body aluminium pair gate electrode of back electrode；
(12) silk-screen printing or ink-jetting style print positive electrode slurry are used in the front of the front side silicon nitride film；
(13) high temperature sintering is carried out to silicon chip, back electrode and positive silver electrode is formed；
(14) anti-LID annealings are carried out to silicon chip, solar cell is formed；
Wherein, step (4) can also be saved.
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