WO2018157520A1 - Improved p-type perc double-sided solar cell and preparation method therefor - Google Patents

Improved p-type perc double-sided solar cell and preparation method therefor Download PDF

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WO2018157520A1
WO2018157520A1 PCT/CN2017/089883 CN2017089883W WO2018157520A1 WO 2018157520 A1 WO2018157520 A1 WO 2018157520A1 CN 2017089883 W CN2017089883 W CN 2017089883W WO 2018157520 A1 WO2018157520 A1 WO 2018157520A1
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Prior art keywords
gate line
solar cell
aluminum
product obtained
silicon nitride
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PCT/CN2017/089883
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French (fr)
Chinese (zh)
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方结彬
何达能
陈刚
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广东爱康太阳能科技有限公司
浙江爱旭太阳能科技有限公司
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Publication of WO2018157520A1 publication Critical patent/WO2018157520A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a solar cell technology, in particular to an improved P-type PERC double-sided solar cell, and to a method for preparing the improved P-type PERC double-sided solar cell.
  • a crystalline silicon solar cell is a device that effectively absorbs solar radiation energy and converts light energy into electrical energy using a photovoltaic effect.
  • the sunlight illuminates the semiconductor PN junction, a new hole-electron pair is formed.
  • the hole flows from the N region to the P region, and the electron flows from the P region to the N region. The current is formed.
  • Conventional crystalline silicon solar cells generally use only front passivation technology, and a layer of silicon nitride is deposited on the front side of the silicon wafer by PECVD to reduce the recombination rate of the minority on the front surface, which can greatly increase the open circuit voltage of the crystalline silicon solar cell. Short-circuit current, thereby improving the photoelectric conversion efficiency of the crystalline silicon solar cell.
  • a first object of the present invention is to provide an improved P-type PERC double-sided solar cell which can greatly improve the photoelectric conversion efficiency of the battery, has a low cost, is simple in process, and is compatible with the production line.
  • a first object of the present invention is achieved by the following technical solution: an improved P-type PERC double-sided solar cell comprising a back electrode, a back silicon nitride film, an aluminum oxide film, and a P-type silicon disposed in this order from bottom to top.
  • An N-type emitter, a front silicon nitride film, and a positive silver electrode wherein the back electrode is mainly formed by a vertically intersecting back-pole main gate line and a back-pole sub-gate line, and is opened on the back silicon nitride film a slot having a silicon nitride film and an aluminum oxide film penetrating through the back surface, wherein the P-type silicon is exposed in the trench, wherein the back gate sub-gate line is mainly composed of a back aluminum gate line and a back silver gate line
  • the portion of the back aluminum grid line located in the slot is connected to the P-type silicon, and the back surface of the portion of the back aluminum gate line exposed outside the slot is provided with a back silver grid line.
  • the present invention provides a layer of silver gate line on the original aluminum gate line as the back-pole sub-gate line, thereby improving the conductivity of the original back-pole sub-gate line.
  • the series resistance of the double-sided solar cell is reduced, thereby improving the photoelectric conversion efficiency of the double-sided solar cell.
  • the preparation process of the invention is simple, the equipment input cost is low, and the compatibility with the existing production line is good, and the existing production line can be simply modified and then used.
  • the invention has simple structure, strong practicability and is suitable for wide application and application.
  • the slotting is a plurality of groups, and each group of slots is arranged in parallel; each group of slots is composed of a plurality of slots, or each slot is a complete slot, or Each group of slots is composed of a plurality of through-hole slots and a plurality of slots, or each slot is composed of a plurality of through-hole slots, or each slot is opened by a plurality of rows arranged in parallel in the lateral direction.
  • the groove is composed of a plurality of slots which are arranged in parallel in the longitudinal direction.
  • an aluminum grid frame surrounding the back gate sub-gate lines is disposed on the back silicon nitride film and on the periphery of all the back gate sub-gate lines, and the aluminum grid frame and the back are respectively
  • the aluminum gate line is connected to the back gate main gate line.
  • the line width of the screen is relatively narrow, and occasionally an aluminum gate is broken.
  • the aluminum gate breakage will cause black breaks in the image of the EL test, causing complaints from customers.
  • the aluminum gate grid will affect the photoelectric conversion efficiency of the battery.
  • the aluminum grid frame provides a transmission path for the electrons to prevent the EL test grid and the photoelectric conversion efficiency caused by the aluminum gate grid.
  • a groove is formed under the aluminum grid frame, and a portion of the aluminum grid frame located in the groove is connected to the P-type silicon.
  • the spacing between the groups of grooves is 0.5 to 50 mm; and the width of the grooves is 10 to 500 microns.
  • the back silver grid line has a width of 30 to 500 microns. Optimal, 50 to 250 microns.
  • the back aluminum grid line has a width of 30 to 500 microns, and most preferably 50 to 250 microns.
  • the back silicon nitride film has a thickness of 20 to 500 nm.
  • the aluminum oxide film has a thickness of 2 to 50 nm.
  • a second object of the present invention is to provide a method of preparing the above improved P-type PERC double-sided solar cell.
  • a second object of the present invention is achieved by the following technical solution: a method for preparing the improved P-type PERC double-sided solar cell, characterized in that the method comprises the following steps:
  • step (10) subjecting the product obtained in the step (9) to high temperature sintering to form a back silver electrode and a positive silver electrode;
  • step (7) to (9) screen printing or ink jet printing is employed; the back surface of the product obtained in the step (3) is polished, and the step (4) is carried out.
  • the present invention in the step (6), a laser is used to open the groove.
  • the present invention has the following remarkable effects:
  • the present invention provides a layer of silver gate line on the original aluminum gate line as the back-pole sub-gate line, thereby improving the conductivity of the original back-pole sub-gate line. Sex, thereby reducing the series resistance of the double-sided solar cell, thereby improving the photoelectric conversion efficiency of the double-sided solar cell.
  • the invention has simple structure and strong practicability, and is suitable for wide application and application.
  • Embodiment 1 is a schematic structural view of Embodiment 1 of the present invention.
  • Figure 2 is a schematic view of the back side of Embodiment 1 of the present invention.
  • FIG. 3 is a schematic structural view of a slotted and back-pole sub-gate line according to Embodiment 1 of the present invention.
  • Figure 4 is a schematic view of the back side of Embodiment 2 of the present invention.
  • Figure 5 is a schematic view showing a grooved structure of a third embodiment of the present invention.
  • Figure 6 is a schematic structural view of Embodiment 4 of the present invention.
  • Figure 7 is a schematic view showing the structure of Embodiment 5 of the present invention.
  • the present invention is an improved double-sided P-type PERC solar cell comprising a back electrode 1, a back silicon nitride film 3, an aluminum oxide film 4, and a P-type silicon 5 disposed in this order from bottom to top.
  • the N-type emitter 6, the front silicon nitride film 7 and the positive silver electrode 8, the positive silver electrode 8 is mainly formed by a vertical silver electrode sub-gate 82 and a positive silver electrode main gate 81 which are perpendicularly intersected.
  • the back electrode 1 is mainly formed by a vertically intersecting back main gate line 11 and a back sub gate line 12, and has a through silicon nitride film 3 and an aluminum oxide film 4 on the back silicon nitride film.
  • the back-pole sub-gate line 12 is mainly composed of a back aluminum gate line 121 and a back silver gate line 122, and the back aluminum gate line 121 is disposed along the slot 2, the back aluminum grid A portion 9 of the line 121 located in the slot 2 is connected to the P-type silicon 5, and a rear silver gate line 122 is disposed on the outer surface of the portion of the back aluminum grid line 121 exposed outside the slot 2 (can be completely covered or Not completely coated) on its outer surface.
  • the invention is coated with a silver grid line on the original aluminum grid line as the back-pole sub-gate line, thereby improving the conductivity of the original back-pole sub-gate line. Sex, thereby reducing the series resistance of the double-sided solar cell, thereby improving the photoelectric conversion efficiency of the double-sided solar cell.
  • Each of the back main gate lines 11 is a complete one or consists of several segments.
  • the back silver gate line 122 has a width of 30 to 500 ⁇ m, preferably 50 to 250 ⁇ m; and the back aluminum grid line 121 has a width of 30 to 500 ⁇ m, preferably 50 to 250 ⁇ m.
  • the number of back aluminum grid lines 121 is 30 to 500.
  • the thickness of the back silicon nitride film 3 is 20 to 500 nm.
  • the thickness of the aluminum oxide film is 2 to 50 nm.
  • the slots 2 are a plurality of groups, and the groups of slots 2 are laterally disposed and arranged in parallel; in this embodiment, each group of slots is a complete slot.
  • the spacing between the groups of slots 2 is 0.5 to 50 mm; the width of the slots is 10 to 500 microns.
  • a method for preparing the improved double-sided P-type PERC solar cell comprises the following steps:
  • the aluminum oxide film 4 and the back silicon nitride film 3 are sequentially deposited on the back surface of the product obtained in the step (3), the thickness of the aluminum oxide film 4 is 2 nm, and the thickness of the back silicon nitride film 3 is 20 nm; Silicon film 7;
  • the position of the groove 2 is a position at which the back electrode sub-gate line 12 is disposed, and the groove 2 is a plurality of groups, and the groups of the grooves are arranged in parallel, each The group slot 2 is a complete slot, the slot width is 50 micrometers, and the spacing between each group of slots is 0.5 mm;
  • the back aluminum gate line 121 is printed by screen printing or ink jet printing on the back side of the product obtained in the step (6), the width of the back aluminum gate line 121 is 30 micrometers, and the back aluminum grid line 121 is disposed along the slit 2, the back aluminum grid A portion 9 of the line 121 located in the slot 2 is connected to the P-type silicon 5;
  • the back silver gate line 122 is printed by screen printing or ink jet printing on the back side of the product obtained in the step (7), and the back silver gate line 122 is disposed along the outer surface of the portion of the back aluminum grid line 121 exposed outside the slot 2, the back The width of the silver grid line 122 is 30 microns;
  • step (10) The product obtained in step (9) is subjected to high temperature sintering to form a back silver electrode 1 and a positive silver electrode 8;
  • each group of slots 2 are longitudinally arranged and arranged in parallel, and the slot 2 and the back pole sub-gate line 12 are perpendicular, and the two are crossed.
  • the portion of the back aluminum gate line 121 located in the recess is connected to the P-type silicon.
  • each set of slots 2 is composed of a plurality of rows of slots arranged in parallel in the lateral direction, and each row of slots is opened by a plurality of segments arranged in parallel in the longitudinal direction.
  • the composition of the trough is different from Embodiment 1 in that each set of slots 2 is composed of a plurality of rows of slots arranged in parallel in the lateral direction, and each row of slots is opened by a plurality of segments arranged in parallel in the longitudinal direction.
  • the composition of the trough is different from Embodiment 1 in that each set of slots 2 is composed of a plurality of rows of slots arranged in parallel in the lateral direction, and each row of slots is opened by a plurality of segments arranged in parallel in the longitudinal direction. The composition of the trough.
  • the present embodiment is different from the first embodiment in that an aluminum grid surrounding the back gate sub-gate line is provided on the back silicon nitride film and on the periphery of all the back gate sub-gate lines 12.
  • the aluminum grid frame 13 is connected to the back aluminum gate line 121 and the back gate main gate line 11, respectively.
  • the aluminum grid frame provides a transmission path for the electrons to prevent the EL test grid and the photoelectric conversion efficiency caused by the aluminum gate grid.
  • a groove 2 is provided below the aluminum grid frame 13, and a portion of the aluminum grid frame 13 located in the slot 2 is connected to the P-type silicon 5. In other embodiments, no slotting may be provided.
  • the present embodiment is different from the second embodiment in that an aluminum grid surrounding the back gate sub-gate line is provided on the back silicon nitride film and on the periphery of all the back gate sub-gate lines 12.
  • the aluminum grid frame 13 is connected to the back aluminum gate line 121 and the back gate main gate line 11, respectively.
  • the aluminum grid frame provides a transmission path for the electronics.
  • a groove 2 is provided below the aluminum grid frame 13, and a portion of the aluminum grid frame 13 located in the slot 2 is connected to the P-type silicon 5. In other embodiments, no slotting may be provided.
  • a method for preparing an improved P-type PERC double-sided solar cell comprises the following steps:
  • step (3) removing the phosphosilicate glass and the peripheral PN junction formed by the diffusion process of the product obtained in the step (2), and polishing the back surface, and transferring to the step (4);
  • the step (3) (4) depositing a front silicon nitride film on the front side of the product obtained in the step (3), and sequentially depositing an aluminum oxide film and a back silicon nitride film on the back surface; the thickness of the aluminum oxide film is 30 nm, and the thickness of the back silicon nitride film is 300 nm;
  • the position of the groove is a position where the back-pole sub-grid line is disposed, and the groove is arranged in several groups, and the groove of each group is arranged in parallel, and each group is grooved by a plurality of slots are formed into slots, the width of the slots is 250 micrometers, and the spacing between the slots of each group is 10 mm;
  • the back aluminum grid line has a width of 500 ⁇ m, the back aluminum grid line is disposed along the slot, and the back aluminum grid line is located in the slotted
  • the inner portion is connected to the P-type silicon
  • the back silver gate line by screen printing or ink jet printing on the back side of the product obtained in the step (7), and the back silver gate line is disposed along the outer surface of the portion of the back aluminum grid line exposed outside the slot, the back silver grid line Width is 500 microns;
  • step (10) subjecting the product obtained in the step (9) to high temperature sintering to form a back silver electrode and a positive silver electrode;
  • a method for preparing an improved P-type PERC double-sided solar cell comprises the following steps:
  • step (3) removing the phosphosilicate glass and the peripheral PN junction formed by the diffusion process of the product obtained in the step (2), and polishing the back surface, and transferring to the step (4);
  • the step (3) (4) depositing a front silicon nitride film on the front side of the product obtained in the step (3), and sequentially depositing an aluminum oxide film and a back silicon nitride film on the back surface; the thickness of the aluminum oxide film is 15 nm, and the thickness of the back silicon nitride film is 160 nm;
  • the position of the groove is a position where the back-pole sub-grid line is disposed, and the groove is arranged in several groups, and the groove of each group is arranged in parallel, and each group is grooved by a plurality of through-hole-shaped slots, the width of the slot is 150 micrometers, and the spacing between the slots of each group is 5 mm;
  • the back aluminum grid line has a width of 170 ⁇ m, the back aluminum grid line is disposed along the slot, and the back aluminum grid line is located in the slotted
  • the inner portion is connected to the P-type silicon
  • the back silver gate line by screen printing or ink jet printing on the back side of the product obtained in the step (7), and the back silver gate line is disposed along the outer surface of the portion of the back aluminum grid line exposed outside the slot, the back silver grid line Width is 170 microns;
  • step (10) subjecting the product obtained in the step (9) to high temperature sintering to form a back silver electrode and a positive silver electrode;
  • each set of slots may be comprised of a plurality of through-hole slots and a plurality of slots, and other embodiments are possible.

Abstract

An improved P-type PERC double-sided solar cell and a preparation method therefor. The solar cell comprises a back electrode (1), a back silicon nitride film (3), an alumina film (4), P-type silicon (5), an N-type emitter (6), a front silicon nitride film (7), and a front silver electrode (8) which are sequentially arranged from bottom to top; the back electrode (1) is mainly formed by connecting back electrode main grid lines (11) and back electrode auxiliary grid lines (12) which are perpendicularly orthogonal; grooves (2) penetrating through the back silicon nitride film (3) and the alumina film (4) are formed in the back silicon nitride film (3); the P-type silicon (5) is exposed in the grooves (2); the back electrode auxiliary grid lines (12) mainly consist of back aluminum grid lines (121) and back silver grid lines (122); the parts (9) of the back aluminum grid lines (121) located in the grooves (2) are connected with the P-type silicon (5); and the back silver grid lines (122) are arranged on the external surfaces of the back aluminum grid lines (121) exposed out of the grooves (2). According to the double-sided solar cell, the conductivity of the original back electrode auxiliary grid lines can be improved, the series resistance of the double-sided solar cell can be reduced, the photoelectric conversion efficiency of the double-sided solar cell can be improved.

Description

一种改进型P型PERC双面太阳能电池及其制备方法Improved P-type PERC double-sided solar cell and preparation method thereof 技术领域Technical field
本发明涉及太阳能电池技术，尤其涉及一种改进型P型PERC双面太阳能电池，还涉及该改进型P型PERC双面太阳能电池的制备方法。The invention relates to a solar cell technology, in particular to an improved P-type PERC double-sided solar cell, and to a method for preparing the improved P-type PERC double-sided solar cell.
背景技术Background technique
晶硅太阳能电池是一种有效吸收太阳辐射能，利用光生伏打效应把光能转换成电能的器件。当太阳光照射在半导体P-N结上时，会形成新的空穴-电子对，在P-N结电场的作用下，空穴由N区流向P区，电子由P区流向N区，接通电路后就形成电流。A crystalline silicon solar cell is a device that effectively absorbs solar radiation energy and converts light energy into electrical energy using a photovoltaic effect. When the sunlight illuminates the semiconductor PN junction, a new hole-electron pair is formed. Under the action of the PN junction electric field, the hole flows from the N region to the P region, and the electron flows from the P region to the N region. The current is formed.
传统的晶硅太阳能电池一般只采用正面钝化技术，在硅片的正面使用PECVD方式沉积一层氮化硅，降低少子在前表面的复合速率，可以大幅度提升晶硅太阳能电池的开路电压和短路电流，从而提升晶硅太阳电池的光电转换效率。Conventional crystalline silicon solar cells generally use only front passivation technology, and a layer of silicon nitride is deposited on the front side of the silicon wafer by PECVD to reduce the recombination rate of the minority on the front surface, which can greatly increase the open circuit voltage of the crystalline silicon solar cell. Short-circuit current, thereby improving the photoelectric conversion efficiency of the crystalline silicon solar cell.
随着当前对晶硅太阳能电池光电转换效率的要求越来越高，人们开始研究PERC背钝化太阳电池技术。目前，业界主流厂家的焦点集中在单面PERC太阳能电池的量产化。而双面PERC太阳能电池，由于其光电转换效率高，同时双面吸收太阳光，发电量更高，在实际应用中具有更大的使用价值。但是，现在对于双面PERC太阳能电池的研究也仅仅局限于一些研究机构在实验室中对其所做的研发，其具有工艺复杂，成本高昂的缺点。With the increasing demand for photoelectric conversion efficiency of crystalline silicon solar cells, people began to study PERC back passivation solar cell technology. At present, the focus of mainstream manufacturers in the industry is focused on the mass production of single-sided PERC solar cells. The double-sided PERC solar cell has higher use value in practical applications due to its high photoelectric conversion efficiency and simultaneous absorption of sunlight on both sides. However, the research on double-sided PERC solar cells is now limited to the research and development of some research institutes in the laboratory, which has the disadvantages of complicated process and high cost.
发明内容Summary of the invention
本发明的第一个目的在于提供一种能够大幅度提高电池的光电转换效率、成本低、工艺简单且与生产线兼容性好的改进型P型PERC双面太阳能电池。A first object of the present invention is to provide an improved P-type PERC double-sided solar cell which can greatly improve the photoelectric conversion efficiency of the battery, has a low cost, is simple in process, and is compatible with the production line.
本发明的第一个目的通过如下的技术方案来实现：一种改进型P型PERC双面太阳能电池，包括从下至上依次设置的背电极、背面氮化硅膜、氧化铝膜、P型硅、N型发射极、正面氮化硅膜和正银电极，所述背电极主要由呈垂直相交的背极主栅线和背极副栅线相连而成，在所述背面氮化硅膜上开有贯通背面氮化硅膜和氧化铝膜的开槽，所述P型硅露于所述开槽中，其特征在于：所述背极副栅线主要由背铝栅线和背银栅线组成，背铝栅线位于开槽内的部分与所述P型硅相连，沿着背铝栅线露于开槽外的部分的外表面设置有背银栅线。 A first object of the present invention is achieved by the following technical solution: an improved P-type PERC double-sided solar cell comprising a back electrode, a back silicon nitride film, an aluminum oxide film, and a P-type silicon disposed in this order from bottom to top. An N-type emitter, a front silicon nitride film, and a positive silver electrode, wherein the back electrode is mainly formed by a vertically intersecting back-pole main gate line and a back-pole sub-gate line, and is opened on the back silicon nitride film a slot having a silicon nitride film and an aluminum oxide film penetrating through the back surface, wherein the P-type silicon is exposed in the trench, wherein the back gate sub-gate line is mainly composed of a back aluminum gate line and a back silver gate line The portion of the back aluminum grid line located in the slot is connected to the P-type silicon, and the back surface of the portion of the back aluminum gate line exposed outside the slot is provided with a back silver grid line.
本发明与现有的双面P型PERC太阳能电池相比，在原有的作为背极副栅线的铝栅线上设置一层银栅线，以此改善原有背极副栅线的导电性，从而降低双面太阳能电池的串阻，进而提高双面太阳能电池的光电转换效率。另外，本发明的制备工艺简单，设备投入成本低，而且与现有生产线兼容性好，可对现有生产线进行简单改造后即可使用。本发明结构简单，实用性强，适于广泛推广和适用。Compared with the existing double-sided P-type PERC solar cell, the present invention provides a layer of silver gate line on the original aluminum gate line as the back-pole sub-gate line, thereby improving the conductivity of the original back-pole sub-gate line. Thereby, the series resistance of the double-sided solar cell is reduced, thereby improving the photoelectric conversion efficiency of the double-sided solar cell. In addition, the preparation process of the invention is simple, the equipment input cost is low, and the compatibility with the existing production line is good, and the existing production line can be simply modified and then used. The invention has simple structure, strong practicability and is suitable for wide application and application.
作为本发明的一种实施方式，所述开槽为若干组，各组开槽呈平行排布；每组开槽由数段开槽组成，或者每组开槽是一条完整的开槽，或者每组开槽由数个通孔状的开槽和数段开槽组成，或者每组开槽由数个通孔状的开槽组成，或者每组开槽由沿横向平行排布的数列开槽组成，每列开槽由沿纵向平行排布的数段开槽组成。As an embodiment of the present invention, the slotting is a plurality of groups, and each group of slots is arranged in parallel; each group of slots is composed of a plurality of slots, or each slot is a complete slot, or Each group of slots is composed of a plurality of through-hole slots and a plurality of slots, or each slot is composed of a plurality of through-hole slots, or each slot is opened by a plurality of rows arranged in parallel in the lateral direction. The groove is composed of a plurality of slots which are arranged in parallel in the longitudinal direction.
作为本发明的一种改进，在所述背面氮化硅膜上且位于全部背极副栅线的外围设有围括住背极副栅线的铝栅框，所述铝栅框分别与背铝栅线和背极主栅线相连。在印刷过程中，由于铝浆的粘度较大，网版的线宽又比较窄，会偶尔出现铝栅断栅的情况。铝栅断栅会导致EL测试的图像出现黑色断栅，招致客户的投诉。同时，铝栅断栅又会影响电池的光电转换效率。铝栅框为电子多提供了一条传输路径，防止铝栅断栅造成的EL测试断栅和光电转换效率低的问题。As an improvement of the present invention, an aluminum grid frame surrounding the back gate sub-gate lines is disposed on the back silicon nitride film and on the periphery of all the back gate sub-gate lines, and the aluminum grid frame and the back are respectively The aluminum gate line is connected to the back gate main gate line. In the printing process, due to the large viscosity of the aluminum paste, the line width of the screen is relatively narrow, and occasionally an aluminum gate is broken. The aluminum gate breakage will cause black breaks in the image of the EL test, causing complaints from customers. At the same time, the aluminum gate grid will affect the photoelectric conversion efficiency of the battery. The aluminum grid frame provides a transmission path for the electrons to prevent the EL test grid and the photoelectric conversion efficiency caused by the aluminum gate grid.
作为本发明的一种改进，在所述铝栅框的下方设有开槽，铝栅框位于开槽内的部分与所述P型硅相连。As an improvement of the present invention, a groove is formed under the aluminum grid frame, and a portion of the aluminum grid frame located in the groove is connected to the P-type silicon.
作为本发明的一种实施方式，各组开槽之间的间距为0.5～50mm；所述开槽的宽度为10～500微米。As an embodiment of the present invention, the spacing between the groups of grooves is 0.5 to 50 mm; and the width of the grooves is 10 to 500 microns.
本发明还可以有以下实施方式：The invention may also have the following embodiments:
所述背银栅线的宽度为30～500微米。最优的，50～250微米。The back silver grid line has a width of 30 to 500 microns. Optimal, 50 to 250 microns.
所述背铝栅线的宽度为30～500微米，最优的，50～250微米。The back aluminum grid line has a width of 30 to 500 microns, and most preferably 50 to 250 microns.
所述背面氮化硅膜的厚度为20～500nm。The back silicon nitride film has a thickness of 20 to 500 nm.
所述氧化铝膜的厚度为2～50nm。The aluminum oxide film has a thickness of 2 to 50 nm.
本发明的第二个目的在于提供一种上述改进型P型PERC双面太阳能电池的制备方法。A second object of the present invention is to provide a method of preparing the above improved P-type PERC double-sided solar cell.
本发明的第二个目的通过如下的技术方案来实现：一种上述改进型P型PERC双面太阳能电池的制备方法，其特征在于包括以下步骤：A second object of the present invention is achieved by the following technical solution: a method for preparing the improved P-type PERC double-sided solar cell, characterized in that the method comprises the following steps:
⑴在P型硅的正面形成绒面；(1) forming a suede on the front side of the P-type silicon;
⑵在由步骤⑴所得产品的正面进行扩散，形成N型发射极； (2) diffusing on the front side of the product obtained in the step (1) to form an N-type emitter;
⑶去除由步骤⑵所得产品在扩散过程形成的磷硅玻璃和周边PN结；(3) removing the phosphosilicate glass and the peripheral PN junction formed by the diffusion process in the product obtained in the step (2);
⑷在由步骤⑶所得产品的背面依次沉积氧化铝膜和背面氮化硅膜，再在正面沉积正面氮化硅膜，或者在由步骤⑶所得产品的正面沉积正面氮化硅膜，再在背面依次沉积氧化铝膜和背面氮化硅膜；(4) sequentially depositing an aluminum oxide film and a back silicon nitride film on the back surface of the product obtained in the step (3), depositing a front silicon nitride film on the front side, or depositing a front silicon nitride film on the front surface of the product obtained in the step (3), and then on the back side Depositing an aluminum oxide film and a back silicon nitride film in this order;
⑸在由步骤⑷所得产品的背面上开设开槽；(5) opening a groove on the back surface of the product obtained in the step (4);
⑹在由步骤⑸所得产品的背面印刷背极主栅线；(6) printing a back main gate line on the back side of the product obtained in the step (5);
⑺在由步骤⑹所得产品的背面印刷背铝栅线，背铝栅线位于开槽内的部分与P型硅相连；(7) printing a back aluminum gate line on the back side of the product obtained in the step (6), and a portion of the back aluminum grid line located in the groove is connected to the P-type silicon;
⑻在由步骤⑺所得产品的背面印刷背银栅线，背银栅线沿背铝栅线露于开槽外的部分的外表面设置；(8) printing a back silver gate line on the back side of the product obtained in the step (7), and the back silver gate line is disposed along an outer surface of a portion of the back aluminum grid line exposed outside the slot;
⑼在由步骤⑻所得产品的正面印刷正电极浆料；(9) printing a positive electrode slurry on the front side of the product obtained in the step (8);
⑽将由步骤⑼所得产品进行高温烧结，形成背银电极和正银电极；(10) subjecting the product obtained in the step (9) to high temperature sintering to form a back silver electrode and a positive silver electrode;
⑾将由步骤⑽所得产品进行抗LID退火即得。(11) The product obtained in the step (10) is subjected to anti-LID annealing.
作为本发明的一种实施方式，在所述步骤⑺～⑼中，采用丝网印刷或喷墨方式印刷；对由步骤⑶所得产品的背面进行抛光，转入步骤⑷。As an embodiment of the present invention, in the steps (7) to (9), screen printing or ink jet printing is employed; the back surface of the product obtained in the step (3) is polished, and the step (4) is carried out.
作为本发明的一种实施方式，在所述步骤⑹中，采用激光开设开槽。与现有技术相比，本发明具有如下显著的效果：As an embodiment of the present invention, in the step (6), a laser is used to open the groove. Compared with the prior art, the present invention has the following remarkable effects:
⑴本发明与现有的P型PERC双面太阳能电池相比，在原有的作为背极副栅线的铝栅线上设置一层银栅线，以此改善原有背极副栅线的导电性，从而降低双面太阳能电池的串阻，进而提高双面太阳能电池的光电转换效率。(1) Compared with the existing P-type PERC double-sided solar cell, the present invention provides a layer of silver gate line on the original aluminum gate line as the back-pole sub-gate line, thereby improving the conductivity of the original back-pole sub-gate line. Sex, thereby reducing the series resistance of the double-sided solar cell, thereby improving the photoelectric conversion efficiency of the double-sided solar cell.
⑵本发明的制备工艺简单，设备投入成本低，而且与现有生产线兼容性好，可对现有生产线进行简单改造后即可使用。(2) The preparation process of the invention is simple, the input cost of the equipment is low, and the compatibility with the existing production line is good, and the existing production line can be used after simple modification.
⑶本发明结构简单，实用性强，适于广泛推广和适用。(3) The invention has simple structure and strong practicability, and is suitable for wide application and application.
附图说明DRAWINGS
下面结合附图和具体实施例对本发明作进一步的详细说明。The invention will be further described in detail below with reference to the drawings and specific embodiments.
图1是本发明实施例1的结构示意图；1 is a schematic structural view of Embodiment 1 of the present invention;
图2是本发明实施例1背面的示意图；Figure 2 is a schematic view of the back side of Embodiment 1 of the present invention;
图3是本发明实施例1开槽和背极副栅线的结构示意图；3 is a schematic structural view of a slotted and back-pole sub-gate line according to Embodiment 1 of the present invention;
图4是本发明实施例2背面的示意图；Figure 4 is a schematic view of the back side of Embodiment 2 of the present invention;
图5是本发明实施例3的开槽结构示意图； Figure 5 is a schematic view showing a grooved structure of a third embodiment of the present invention;
图6是本发明实施例4的结构示意图；Figure 6 is a schematic structural view of Embodiment 4 of the present invention;
图7是本发明实施例5的结构示意图。Figure 7 is a schematic view showing the structure of Embodiment 5 of the present invention.
具体实施方式detailed description
实施例1Example 1
如图1～3所示，是本发明一种改进型双面P型PERC太阳能电池，包括从下至上依次设置的背电极1、背面氮化硅膜3、氧化铝膜4、P型硅5、N型发射极6、正面氮化硅膜7和正银电极8，正银电极8主要由呈垂直相交的正银电极副栅82和正银电极主栅81相连而成。背电极1主要由呈垂直相交的背极主栅线11和背极副栅线12相连而成，在背面氮化硅膜上3开有贯通背面氮化硅膜3和氧化铝膜4的开槽2，P型硅5露于开槽2中，背极副栅线12主要由背铝栅线121和背银栅线122组成，背铝栅线121沿着开槽2设置，背铝栅线121位于开槽2内的部分9与P型硅5相连，沿着背铝栅线121露于开槽2外的部分的外表面设置有背银栅线122(可以完全包覆，也可以不完全包覆)在其外表面上。本发明与现有的双面P型PERC太阳能电池相比，在原有的作为背极副栅线的铝栅线上包覆一层银栅线，以此改善原有背极副栅线的导电性，从而降低双面太阳能电池的串阻，进而提高双面太阳能电池的光电转换效率。As shown in FIGS. 1 to 3, the present invention is an improved double-sided P-type PERC solar cell comprising a back electrode 1, a back silicon nitride film 3, an aluminum oxide film 4, and a P-type silicon 5 disposed in this order from bottom to top. The N-type emitter 6, the front silicon nitride film 7 and the positive silver electrode 8, the positive silver electrode 8 is mainly formed by a vertical silver electrode sub-gate 82 and a positive silver electrode main gate 81 which are perpendicularly intersected. The back electrode 1 is mainly formed by a vertically intersecting back main gate line 11 and a back sub gate line 12, and has a through silicon nitride film 3 and an aluminum oxide film 4 on the back silicon nitride film. The trench 2, the P-type silicon 5 is exposed in the trench 2, the back-pole sub-gate line 12 is mainly composed of a back aluminum gate line 121 and a back silver gate line 122, and the back aluminum gate line 121 is disposed along the slot 2, the back aluminum grid A portion 9 of the line 121 located in the slot 2 is connected to the P-type silicon 5, and a rear silver gate line 122 is disposed on the outer surface of the portion of the back aluminum grid line 121 exposed outside the slot 2 (can be completely covered or Not completely coated) on its outer surface. Compared with the existing double-sided P-type PERC solar cell, the invention is coated with a silver grid line on the original aluminum grid line as the back-pole sub-gate line, thereby improving the conductivity of the original back-pole sub-gate line. Sex, thereby reducing the series resistance of the double-sided solar cell, thereby improving the photoelectric conversion efficiency of the double-sided solar cell.
每条背极主栅线11为完整的一条，或者由数段组成。背银栅线122的宽度为30～500微米，优选50～250微米；背铝栅线121的宽度为30～500微米，优选50～250微米。背铝栅线121的数量为30～500条。背面氮化硅膜3的厚度为20～500nm。氧化铝膜的厚度为2～50nm。Each of the back main gate lines 11 is a complete one or consists of several segments. The back silver gate line 122 has a width of 30 to 500 μm, preferably 50 to 250 μm; and the back aluminum grid line 121 has a width of 30 to 500 μm, preferably 50 to 250 μm. The number of back aluminum grid lines 121 is 30 to 500. The thickness of the back silicon nitride film 3 is 20 to 500 nm. The thickness of the aluminum oxide film is 2 to 50 nm.
开槽2为若干组，各组开槽2横向设置且呈平行排布；在本实施例中，每组开槽是一条完整的开槽。各组开槽2之间的间距为0.5～50mm；开槽的宽度为10～500微米。The slots 2 are a plurality of groups, and the groups of slots 2 are laterally disposed and arranged in parallel; in this embodiment, each group of slots is a complete slot. The spacing between the groups of slots 2 is 0.5 to 50 mm; the width of the slots is 10 to 500 microns.
一种上述改进型双面P型PERC太阳能电池的制备方法，包括以下步骤：A method for preparing the improved double-sided P-type PERC solar cell comprises the following steps:
⑴在P型硅5的正面形成绒面；(1) forming a pile on the front side of the P-type silicon 5;
⑵在由步骤⑴所得产品的正面进行扩散，形成N型发射极6；(2) diffusing on the front side of the product obtained in step (1) to form an N-type emitter 6;
⑶去除由步骤⑵所得产品在扩散过程形成的磷硅玻璃和周边PN结；(3) removing the phosphosilicate glass and the peripheral PN junction formed by the diffusion process in the product obtained in the step (2);
⑷在由步骤⑶所得产品的背面依次沉积氧化铝膜4和背面氮化硅膜3，氧化铝膜4的厚度为2nm，背面氮化硅膜3的厚度为20nm；再在正面沉积正面氮化硅膜7； (4) The aluminum oxide film 4 and the back silicon nitride film 3 are sequentially deposited on the back surface of the product obtained in the step (3), the thickness of the aluminum oxide film 4 is 2 nm, and the thickness of the back silicon nitride film 3 is 20 nm; Silicon film 7;
⑸在由步骤⑷所得产品的背面上采用激光开设开槽2，开槽2的位置是设置背极副栅线12的位置，开槽2为若干组，各组开槽呈平行排布，每组开槽2是一条完整的开槽，开槽的宽度为50微米，各组开槽之间的间距为0.5mm；(5) Opening a groove 2 by laser on the back surface of the product obtained in the step (4), the position of the groove 2 is a position at which the back electrode sub-gate line 12 is disposed, and the groove 2 is a plurality of groups, and the groups of the grooves are arranged in parallel, each The group slot 2 is a complete slot, the slot width is 50 micrometers, and the spacing between each group of slots is 0.5 mm;
⑹在由步骤⑸所得产品的背面采用丝网印刷或喷墨方式印刷背极主栅线11；(6) printing the back electrode main gate line 11 by screen printing or ink jet printing on the back side of the product obtained in the step (5);
⑺在由步骤⑹所得产品的背面采用丝网印刷或喷墨方式印刷背铝栅线121，背铝栅线121的宽度为30微米，背铝栅线121沿着开槽2设置，背铝栅线121位于开槽2内的部分9与P型硅5相连；(7) The back aluminum gate line 121 is printed by screen printing or ink jet printing on the back side of the product obtained in the step (6), the width of the back aluminum gate line 121 is 30 micrometers, and the back aluminum grid line 121 is disposed along the slit 2, the back aluminum grid A portion 9 of the line 121 located in the slot 2 is connected to the P-type silicon 5;
⑻在由步骤⑺所得产品的背面采用丝网印刷或喷墨方式印刷背银栅线122，背银栅线122沿着背铝栅线121露于开槽2外的部分的外表面设置，背银栅线122的宽度为30微米；(8) The back silver gate line 122 is printed by screen printing or ink jet printing on the back side of the product obtained in the step (7), and the back silver gate line 122 is disposed along the outer surface of the portion of the back aluminum grid line 121 exposed outside the slot 2, the back The width of the silver grid line 122 is 30 microns;
⑼在由步骤⑻所得产品的正面采用丝网印刷或喷墨方式印刷正电极浆料；(9) printing a positive electrode slurry by screen printing or ink jet printing on the front side of the product obtained in the step (8);
⑽将由步骤⑼所得产品进行高温烧结，形成背银电极1和正银电极8；(10) The product obtained in step (9) is subjected to high temperature sintering to form a back silver electrode 1 and a positive silver electrode 8;
⑾将由步骤⑽所得产品进行抗LID退火即得。(11) The product obtained in the step (10) is subjected to anti-LID annealing.
实施例2Example 2
如图4所示，本实施例与实施例1的不同之处在于：各组开槽2纵向设置且呈平行排布，开槽2与背极副栅线12呈垂直状，在二者交叉部位，背铝栅线121位于开槽内的部分与P型硅相连。As shown in FIG. 4, the difference between this embodiment and the first embodiment is that each group of slots 2 are longitudinally arranged and arranged in parallel, and the slot 2 and the back pole sub-gate line 12 are perpendicular, and the two are crossed. The portion of the back aluminum gate line 121 located in the recess is connected to the P-type silicon.
实施例3Example 3
如图5所示，本实施例与实施例1的不同之处在于：每组开槽2由沿横向平行排布的数列开槽组成，每列开槽由沿纵向平行排布的数段开槽组成。As shown in FIG. 5, the present embodiment is different from Embodiment 1 in that each set of slots 2 is composed of a plurality of rows of slots arranged in parallel in the lateral direction, and each row of slots is opened by a plurality of segments arranged in parallel in the longitudinal direction. The composition of the trough.
实施例4Example 4
如图6所示，本实施例与实施例1的不同之处在于：在背面氮化硅膜上且位于全部背极副栅线12的外围设有围括住背极副栅线的铝栅框13，铝栅框13分别与背铝栅线121和背极主栅线11相连。铝栅框为电子多提供了一条传输路径，防止铝栅断栅造成的EL测试断栅和光电转换效率低的问题。在铝栅框13的下方设有开槽2，铝栅框13位于开槽2内的部分与P型硅5相连。在其它实施例中，也可以不设置开槽。As shown in FIG. 6, the present embodiment is different from the first embodiment in that an aluminum grid surrounding the back gate sub-gate line is provided on the back silicon nitride film and on the periphery of all the back gate sub-gate lines 12. At block 13, the aluminum grid frame 13 is connected to the back aluminum gate line 121 and the back gate main gate line 11, respectively. The aluminum grid frame provides a transmission path for the electrons to prevent the EL test grid and the photoelectric conversion efficiency caused by the aluminum gate grid. A groove 2 is provided below the aluminum grid frame 13, and a portion of the aluminum grid frame 13 located in the slot 2 is connected to the P-type silicon 5. In other embodiments, no slotting may be provided.
实施例5Example 5
如图7所示，本实施例与实施例2的不同之处在于：在背面氮化硅膜上且位于全部背极副栅线12的外围设有围括住背极副栅线的铝栅框13，铝栅框13分别与背铝栅线121和背极主栅线11相连。铝栅框为电子多提供了一条传输路径，防 止铝栅断栅造成的EL测试断栅和光电转换效率低的问题。在铝栅框13的下方设有开槽2，铝栅框13位于开槽2内的部分与P型硅5相连。在其它实施例中，也可以不设置开槽。As shown in FIG. 7, the present embodiment is different from the second embodiment in that an aluminum grid surrounding the back gate sub-gate line is provided on the back silicon nitride film and on the periphery of all the back gate sub-gate lines 12. At block 13, the aluminum grid frame 13 is connected to the back aluminum gate line 121 and the back gate main gate line 11, respectively. The aluminum grid frame provides a transmission path for the electronics. The problem of EL test broken gate and low photoelectric conversion efficiency caused by aluminum gate breakage. A groove 2 is provided below the aluminum grid frame 13, and a portion of the aluminum grid frame 13 located in the slot 2 is connected to the P-type silicon 5. In other embodiments, no slotting may be provided.
实施例6Example 6
一种改进型P型PERC双面太阳能电池的制备方法，包括以下步骤：A method for preparing an improved P-type PERC double-sided solar cell comprises the following steps:
⑴在P型硅的正面形成绒面；(1) forming a suede on the front side of the P-type silicon;
⑵在由步骤⑴所得产品的正面进行扩散，形成N型发射极；(2) diffusing on the front side of the product obtained in the step (1) to form an N-type emitter;
⑶去除由步骤⑵所得产品在扩散过程形成的磷硅玻璃和周边PN结，并对背面进行抛光，转入步骤⑷；(3) removing the phosphosilicate glass and the peripheral PN junction formed by the diffusion process of the product obtained in the step (2), and polishing the back surface, and transferring to the step (4);
⑷在由步骤⑶所得产品的正面沉积正面氮化硅膜，再在背面依次沉积氧化铝膜和背面氮化硅膜；氧化铝膜的厚度为30nm，背面氮化硅膜的厚度为300nm；(4) depositing a front silicon nitride film on the front side of the product obtained in the step (3), and sequentially depositing an aluminum oxide film and a back silicon nitride film on the back surface; the thickness of the aluminum oxide film is 30 nm, and the thickness of the back silicon nitride film is 300 nm;
⑸在由步骤⑷所得产品的背面上采用激光开设开槽，开槽的位置是设置背极副栅线的位置，开槽为若干组，各组开槽呈平行排布，每组开槽由数段开槽组成开槽，开槽的宽度为250微米，各组开槽之间的间距为10mm；(5) Opening a groove by using a laser on the back surface of the product obtained in the step (4), the position of the groove is a position where the back-pole sub-grid line is disposed, and the groove is arranged in several groups, and the groove of each group is arranged in parallel, and each group is grooved by a plurality of slots are formed into slots, the width of the slots is 250 micrometers, and the spacing between the slots of each group is 10 mm;
⑹在由步骤⑸所得产品的背面采用丝网印刷或喷墨方式印刷背极主栅线；(6) printing the back main gate line by screen printing or ink jet printing on the back side of the product obtained in the step (5);
⑺在由步骤⑹所得产品的背面采用丝网印刷或喷墨方式印刷背铝栅线，背铝栅线的宽度为500微米，背铝栅线沿着开槽设置，背铝栅线位于开槽内的部分与P型硅相连；(7) Printing the back aluminum grid line by screen printing or ink jet printing on the back side of the product obtained in the step (6), the back aluminum grid line has a width of 500 μm, the back aluminum grid line is disposed along the slot, and the back aluminum grid line is located in the slotted The inner portion is connected to the P-type silicon;
⑻在由步骤⑺所得产品的背面采用丝网印刷或喷墨方式印刷背银栅线，背银栅线沿着背铝栅线露于开槽外的部分的外表面设置，背银栅线的宽度为500微米；(8) printing the back silver gate line by screen printing or ink jet printing on the back side of the product obtained in the step (7), and the back silver gate line is disposed along the outer surface of the portion of the back aluminum grid line exposed outside the slot, the back silver grid line Width is 500 microns;
⑼在由步骤⑻所得产品的正面采用丝网印刷或喷墨方式印刷正电极浆料；(9) printing a positive electrode slurry by screen printing or ink jet printing on the front side of the product obtained in the step (8);
⑽将由步骤⑼所得产品进行高温烧结，形成背银电极和正银电极；(10) subjecting the product obtained in the step (9) to high temperature sintering to form a back silver electrode and a positive silver electrode;
⑾将由步骤⑽所得产品进行抗LID退火即得。(11) The product obtained in the step (10) is subjected to anti-LID annealing.
实施例7Example 7
一种改进型P型PERC双面太阳能电池的制备方法，包括以下步骤：A method for preparing an improved P-type PERC double-sided solar cell comprises the following steps:
⑴在P型硅的正面形成绒面；(1) forming a suede on the front side of the P-type silicon;
⑵在由步骤⑴所得产品的正面进行扩散，形成N型发射极；(2) diffusing on the front side of the product obtained in the step (1) to form an N-type emitter;
⑶去除由步骤⑵所得产品在扩散过程形成的磷硅玻璃和周边PN结，并对背面进行抛光，转入步骤⑷；(3) removing the phosphosilicate glass and the peripheral PN junction formed by the diffusion process of the product obtained in the step (2), and polishing the back surface, and transferring to the step (4);
⑷在由步骤⑶所得产品的正面沉积正面氮化硅膜，再在背面依次沉积氧化铝膜和背面氮化硅膜；氧化铝膜的厚度为15nm，背面氮化硅膜的厚度为160nm； (4) depositing a front silicon nitride film on the front side of the product obtained in the step (3), and sequentially depositing an aluminum oxide film and a back silicon nitride film on the back surface; the thickness of the aluminum oxide film is 15 nm, and the thickness of the back silicon nitride film is 160 nm;
⑸在由步骤⑷所得产品的背面上采用激光开设开槽，开槽的位置是设置背极副栅线的位置，开槽为若干组，各组开槽呈平行排布，每组开槽由数个通孔状的开槽组成，开槽的宽度为150微米，各组开槽之间的间距为5mm；(5) Opening a groove by using a laser on the back surface of the product obtained in the step (4), the position of the groove is a position where the back-pole sub-grid line is disposed, and the groove is arranged in several groups, and the groove of each group is arranged in parallel, and each group is grooved by a plurality of through-hole-shaped slots, the width of the slot is 150 micrometers, and the spacing between the slots of each group is 5 mm;
⑹在由步骤⑸所得产品的背面采用丝网印刷或喷墨方式印刷背极主栅线；(6) printing the back main gate line by screen printing or ink jet printing on the back side of the product obtained in the step (5);
⑺在由步骤⑹所得产品的背面采用丝网印刷或喷墨方式印刷背铝栅线，背铝栅线的宽度为170微米，背铝栅线沿着开槽设置，背铝栅线位于开槽内的部分与P型硅相连；(7) Printing the back aluminum grid line by screen printing or ink jet printing on the back side of the product obtained in the step (6), the back aluminum grid line has a width of 170 μm, the back aluminum grid line is disposed along the slot, and the back aluminum grid line is located in the slotted The inner portion is connected to the P-type silicon;
⑻在由步骤⑺所得产品的背面采用丝网印刷或喷墨方式印刷背银栅线，背银栅线沿着背铝栅线露于开槽外的部分的外表面设置，背银栅线的宽度为170微米；(8) printing the back silver gate line by screen printing or ink jet printing on the back side of the product obtained in the step (7), and the back silver gate line is disposed along the outer surface of the portion of the back aluminum grid line exposed outside the slot, the back silver grid line Width is 170 microns;
⑼在由步骤⑻所得产品的正面采用丝网印刷或喷墨方式印刷正电极浆料；(9) printing a positive electrode slurry by screen printing or ink jet printing on the front side of the product obtained in the step (8);
⑽将由步骤⑼所得产品进行高温烧结，形成背银电极和正银电极；(10) subjecting the product obtained in the step (9) to high temperature sintering to form a back silver electrode and a positive silver electrode;
⑾将由步骤⑽所得产品进行抗LID退火即得。(11) The product obtained in the step (10) is subjected to anti-LID annealing.
在其它实施例中，每组开槽可以是由数个通孔状的开槽和数段开槽组成，也还可以有其他的实施方式。In other embodiments, each set of slots may be comprised of a plurality of through-hole slots and a plurality of slots, and other embodiments are possible.
本发明的实施方式不限于此，根据本发明的上述内容，按照本领域的普通技术知识和惯用手段，在不脱离本发明上述基本技术思想前提下，本发明还可以做出其它多种形式的修改、替换或变更，均落在本发明权利保护范围之内。 The embodiments of the present invention are not limited thereto. According to the above-mentioned contents of the present invention, the present invention can also be embodied in various other forms without departing from the basic technical idea of the present invention. Modifications, substitutions, and alterations are within the scope of the invention.

Claims (10)

  1. 一种改进型P型PERC双面太阳能电池，包括从下至上依次设置的背电极、背面氮化硅膜、氧化铝膜、P型硅、N型发射极、正面氮化硅膜和正银电极，所述背电极主要由呈垂直相交的背极主栅线和背极副栅线相连而成，在所述背面氮化硅膜上开有贯通背面氮化硅膜和氧化铝膜的开槽，所述P型硅露于所述开槽中，其特征在于：所述背极副栅线主要由背铝栅线和背银栅线组成，背铝栅线位于开槽内的部分与所述P型硅相连，沿着背铝栅线露于开槽外的部分的外表面设置有背银栅线。An improved P-type PERC double-sided solar cell comprising a back electrode, a back silicon nitride film, an aluminum oxide film, a P-type silicon, an N-type emitter, a front silicon nitride film and a positive silver electrode arranged in order from bottom to top. The back electrode is mainly formed by a vertically intersecting back-pole main gate line and a back-pole sub-gate line, and a slit is formed on the back surface silicon nitride film through the back surface silicon nitride film and the aluminum oxide film. The P-type silicon is exposed in the trench, wherein the back-pole sub-gate line is mainly composed of a back aluminum gate line and a back silver gate line, and a portion of the back aluminum gate line located in the slot and the The P-type silicon is connected, and the back silver gate line is disposed on the outer surface of the portion exposed outside the slot along the back aluminum grid line.
  2. 根据权利要求1所述的改进型P型PERC双面太阳能电池，其特征在于：所述开槽为若干组，各组开槽呈平行排布；每组开槽由数段开槽组成，或者每组开槽是一条完整的开槽，或者每组开槽由数个通孔状的开槽和数段开槽组成，或者每组开槽由数个通孔状的开槽组成，或者每组开槽由沿横向平行排布的数列开槽组成，每列开槽由沿纵向平行排布的数段开槽组成。The improved P-type PERC double-sided solar cell according to claim 1, wherein the slotting is a plurality of groups, and each group of slots is arranged in parallel; each group of slots is composed of a plurality of slots, or Each set of slots is a complete slot, or each set of slots consists of several through-hole slots and several slots, or each slot consists of several through-hole slots, or each The group slot is composed of a plurality of rows of slots arranged in parallel in the lateral direction, and each row of slots is composed of a plurality of slots arranged in parallel in the longitudinal direction.
  3. 根据权利要求2所述的改进型P型PERC双面太阳能电池，其特征在于：各组开槽之间的间距为0.5～50mm；所述开槽的宽度为10～500微米。The improved P-type PERC double-sided solar cell according to claim 2, wherein the spacing between the groups of grooves is 0.5 to 50 mm; and the width of the grooves is 10 to 500 μm.
  4. 根据权利要求3所述的改进型P型PERC双面太阳能电池，其特征在于：所述背银栅线的宽度为30～500微米；所述背铝栅线的宽度为30～500微米。The improved P-type PERC double-sided solar cell according to claim 3, wherein the back silver gate line has a width of 30 to 500 μm; and the back aluminum gate line has a width of 30 to 500 μm.
  5. 根据权利要求4所述的改进型P型PERC双面太阳能电池，其特征在于：所述背银栅线的宽度为50～250微米；所述氧化铝膜的厚度为2～50nm。The improved P-type PERC double-sided solar cell according to claim 4, wherein the back silver grid line has a width of 50 to 250 μm; and the aluminum oxide film has a thickness of 2 to 50 nm.
  6. 根据权利要求5所述的改进型P型PER C双面太阳能电池，其特征在于：所述背面氮化硅膜的厚度为20～500nm；所述背铝栅线的宽度为50～250微米。The improved P-type PER C double-sided solar cell according to claim 5, wherein the back silicon nitride film has a thickness of 20 to 500 nm; and the back aluminum gate line has a width of 50 to 250 μm.
  7. 根据权利要求6所述的改进型P型PERC双面太阳能电池，其特征在于：在所述背面氮化硅膜上且位于全部背极副栅线的外围设有围括住背极副栅线的铝栅框，所述铝栅框分别与背铝栅线和背极主栅线相连。The improved P-type PERC double-sided solar cell according to claim 6, wherein a periphery of the back-side silicon nitride film and a periphery of all of the back-pole sub-gate lines are provided with a back-pole sub-gate line The aluminum grid frame is connected to the back aluminum gate line and the back pole main gate line, respectively.
  8. 根据权利要求7所述的改进型P型PERC双面太阳能电池，其特征在于： 在所述铝栅框的下方设有开槽，铝栅框位于开槽内的部分与所述P型硅相连。The improved P-type PERC double-sided solar cell of claim 7 wherein: A slot is formed under the aluminum grid frame, and a portion of the aluminum grid frame located in the slot is connected to the P-type silicon.
  9. 一种权利要求1所述改进型P型PERC双面太阳能电池的制备方法，其特征在于包括以下步骤：A method of fabricating a modified P-type PERC double-sided solar cell according to claim 1, comprising the steps of:
    ⑴在P型硅的正面形成绒面；(1) forming a suede on the front side of the P-type silicon;
    ⑵在由步骤⑴所得产品的正面进行扩散，形成N型发射极；(2) diffusing on the front side of the product obtained in the step (1) to form an N-type emitter;
    ⑶去除由步骤⑵所得产品在扩散过程形成的磷硅玻璃和周边PN结；(3) removing the phosphosilicate glass and the peripheral PN junction formed by the diffusion process in the product obtained in the step (2);
    ⑷在由步骤⑶所得产品的背面依次沉积氧化铝膜和背面氮化硅膜，再在正面沉积正面氮化硅膜，或者在由步骤⑶所得产品的正面沉积正面氮化硅膜，再在背面依次沉积氧化铝膜和背面氮化硅膜；(4) sequentially depositing an aluminum oxide film and a back silicon nitride film on the back surface of the product obtained in the step (3), depositing a front silicon nitride film on the front side, or depositing a front silicon nitride film on the front surface of the product obtained in the step (3), and then on the back side Depositing an aluminum oxide film and a back silicon nitride film in this order;
    ⑸在由步骤⑷所得产品的背面上开设开槽；(5) opening a groove on the back surface of the product obtained in the step (4);
    ⑹在由步骤⑸所得产品的背面印刷背极主栅线；(6) printing a back main gate line on the back side of the product obtained in the step (5);
    ⑺在由步骤⑹所得产品的背面印刷背铝栅线，背铝栅线位于开槽内的部分与P型硅相连；(7) printing a back aluminum gate line on the back side of the product obtained in the step (6), and a portion of the back aluminum grid line located in the groove is connected to the P-type silicon;
    ⑻在由步骤⑺所得产品的背面印刷背银栅线，背银栅线沿背铝栅线露于开槽外的部分的外表面设置；(8) printing a back silver gate line on the back side of the product obtained in the step (7), and the back silver gate line is disposed along an outer surface of a portion of the back aluminum grid line exposed outside the slot;
    ⑼在由步骤⑻所得产品的正面印刷正电极浆料；(9) printing a positive electrode slurry on the front side of the product obtained in the step (8);
    ⑽将由步骤⑼所得产品进行高温烧结，形成背银电极和正银电极；(10) subjecting the product obtained in the step (9) to high temperature sintering to form a back silver electrode and a positive silver electrode;
    ⑾将由步骤⑽所得产品进行抗LID退火即得。(11) The product obtained in the step (10) is subjected to anti-LID annealing.
  10. 根据权利要求9所述的制备方法，其特征在于：在所述步骤⑺～⑼中，采用丝网印刷或喷墨方式印刷；对由步骤⑶所得产品的背面进行抛光，转入步骤⑷。 The preparation method according to claim 9, wherein in the steps (7) to (9), printing is performed by screen printing or ink jet printing; the back surface of the product obtained in the step (3) is polished, and the step (4) is carried out.
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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106876499A (en) * 2017-03-03 2017-06-20 浙江爱旭太阳能科技有限公司 A kind of modified p-type PERC double-sided solar batteries and preparation method thereof
CN108365026A (en) * 2018-03-28 2018-08-03 通威太阳能（成都）有限公司 A kind of double-side solar cell back side conductive structure and production method based on PERC
CN108717948A (en) * 2018-07-09 2018-10-30 浙江爱旭太阳能科技有限公司 A kind of PERC double-sided solar batteries and preparation method thereof of enhancing back of the body passivation
CN109065640A (en) * 2018-07-09 2018-12-21 浙江爱旭太阳能科技有限公司 A kind of PERC single side solar battery and preparation method thereof of enhancing back passivation
CN111668339A (en) * 2020-04-23 2020-09-15 天津爱旭太阳能科技有限公司 Solar cell front electrode alignment printing method and preparation method
CN113113498A (en) * 2021-04-15 2021-07-13 浙江正泰太阳能科技有限公司 PERC double-sided battery piece and photovoltaic module

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058885A (en) * 1998-08-03 2000-02-25 Sanyo Electric Co Ltd Solar battery and manufacture thereof
US20110139250A1 (en) * 2009-12-14 2011-06-16 Industrial Technology Research Institute Bifacial solar cell
CN105097961A (en) * 2015-06-03 2015-11-25 北京七星华创电子股份有限公司 Preparation method of passivated emitter and rear side cell (PERC) and passivated emitter and rear total diffused (PERT) solar cells
CN106057920A (en) * 2016-06-17 2016-10-26 苏州阿特斯阳光电力科技有限公司 PERC (Passivated Emitter and Rear Contact) solar cell
CN106206757A (en) * 2015-03-26 2016-12-07 新日光能源科技股份有限公司 Solar cell with multilayer anti-reflection coating film on back surface
CN106876499A (en) * 2017-03-03 2017-06-20 浙江爱旭太阳能科技有限公司 A kind of modified p-type PERC double-sided solar batteries and preparation method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104518051A (en) * 2013-10-08 2015-04-15 台湾茂矽电子股份有限公司 Solar cell production method
DE102013111680A1 (en) * 2013-10-23 2015-04-23 Solarworld Innovations Gmbh Solar cell and method for producing a solar cell
US9997650B2 (en) * 2013-11-07 2018-06-12 Mitsubishi Electric Corporation Solar cell, manufacturing method thereof, and solar cell module
CN106449877A (en) * 2016-10-17 2017-02-22 浙江晶科能源有限公司 PERC preparation method
CN206505929U (en) * 2017-03-03 2017-09-19 浙江爱旭太阳能科技有限公司 A kind of modified p-type PERC double-sided solar batteries

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058885A (en) * 1998-08-03 2000-02-25 Sanyo Electric Co Ltd Solar battery and manufacture thereof
US20110139250A1 (en) * 2009-12-14 2011-06-16 Industrial Technology Research Institute Bifacial solar cell
CN106206757A (en) * 2015-03-26 2016-12-07 新日光能源科技股份有限公司 Solar cell with multilayer anti-reflection coating film on back surface
CN105097961A (en) * 2015-06-03 2015-11-25 北京七星华创电子股份有限公司 Preparation method of passivated emitter and rear side cell (PERC) and passivated emitter and rear total diffused (PERT) solar cells
CN106057920A (en) * 2016-06-17 2016-10-26 苏州阿特斯阳光电力科技有限公司 PERC (Passivated Emitter and Rear Contact) solar cell
CN106876499A (en) * 2017-03-03 2017-06-20 浙江爱旭太阳能科技有限公司 A kind of modified p-type PERC double-sided solar batteries and preparation method thereof

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