CN108717948A - A kind of PERC double-sided solar batteries and preparation method thereof of enhancing back of the body passivation - Google Patents
A kind of PERC double-sided solar batteries and preparation method thereof of enhancing back of the body passivation Download PDFInfo
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- CN108717948A CN108717948A CN201810743817.6A CN201810743817A CN108717948A CN 108717948 A CN108717948 A CN 108717948A CN 201810743817 A CN201810743817 A CN 201810743817A CN 108717948 A CN108717948 A CN 108717948A
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- 238000002161 passivation Methods 0.000 title claims abstract description 70
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 26
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 26
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 26
- 230000002708 enhancing effect Effects 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 68
- 239000010703 silicon Substances 0.000 claims abstract description 68
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 67
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000004332 silver Substances 0.000 claims abstract description 22
- 229910052709 silver Inorganic materials 0.000 claims abstract description 22
- 229940037003 alum Drugs 0.000 claims abstract description 21
- 239000012528 membrane Substances 0.000 claims abstract description 5
- 239000000047 product Substances 0.000 claims description 65
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 32
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 32
- 238000000151 deposition Methods 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 239000011267 electrode slurry Substances 0.000 claims description 14
- 239000004411 aluminium Substances 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 7
- 239000012467 final product Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- -1 silicon nitrides Chemical class 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention discloses a kind of PERC double-sided solar batteries and preparation method thereof of enhancing back of the body passivation, including back of the body silver electrode, alum gate line, backside passivation film, P-type silicon, N-type emitter, front passivating film and the positive silver electrode set gradually from bottom to up, the fluting of perforation backside passivation film is provided in the backside passivation film, the alum gate line is connected by the fluting with P-type silicon, trepanning is laid at the back side of the P-type silicon, the passivating back membrane part is located in the trepanning, to increase the area of backside passivation film.The present invention grows backside passivation film in trepanning, increases the area of backside passivation film, passivation effect is improved, to improve the photoelectric conversion efficiency of battery by laying trepanning in silicon chip back side；Preparation process of the present invention is simple, and equipment input cost is low, and with existing production line good compatibility, to existing production line carry out simply be transformed after i.e. can be used.In addition, the low manufacture cost of the present invention, simple for process, suitable for being widely popularized and being applicable in.
Description
Technical field
The present invention relates to solar battery technologies more particularly to a kind of enhancing to carry on the back the PERC double-sided solar batteries being passivated,
Further relate to the preparation method of the PERC double-sided solar batteries of enhancing back of the body passivation.
Background technology
Crystal silicon solar batteries are a kind of effectively absorption solar radiant energies, and electricity is converted optical energy into using photovoltaic effect
The device of energy.When sunlight is radiated in semiconductor P-N junction, new electron-hole pair can be formed, in the work of P-N junction electric field
Under, hole flows to the areas P by the areas N, and electronics flows to the areas N by the areas P, and electric current is just formed after connecting circuit.
Conventional crystal silicon solar batteries are heavy using PECVD modes in the front of silicon chip generally only with front passivating technique
One layer of silicon nitride of product reduces few son in the recombination rate of front surface, can significantly promote the open circuit electricity of crystal silicon solar batteries
Pressure and short circuit current, to promote the photoelectric conversion efficiency of crystal silicon solar battery.
As the requirement currently to crystal silicon solar batteries photoelectric conversion efficiency is higher and higher, people begin one's study PERC the back of the body
Passivating solar battery technology.However, how to carry on the back passivating solar battery technology using PERC improves the light of PERC solar cells
Photoelectric transformation efficiency is current industry technical barrier urgently to be resolved hurrily.
Invention content
First of the present invention is designed to provide a kind of photoelectric conversion efficiency that can promote battery, at low cost, technique
Simply, the PERC double-sided solar batteries being passivated with the enhancing back of the body of existing production line good compatibility.
First purpose of the present invention is realized by the following technical solutions：A kind of PERC of enhancing back of the body passivation is two-sided too
It is positive can battery, including set gradually from bottom to up back of the body silver electrode, alum gate line, backside passivation film, P-type silicon, N-type emitter, just
Face passivating film and positive silver electrode, are provided with the fluting of perforation backside passivation film in the backside passivation film, and the alum gate line passes through
The fluting is connected with P-type silicon, it is characterised in that：Trepanning, passivating back membrane part position are laid at the back side of the P-type silicon
In in the trepanning, to increase the area of backside passivation film.
The present invention grows backside passivation film in trepanning, increases the face of backside passivation film by laying trepanning in silicon chip back side
Product improves passivation effect, to improve the photoelectric conversion efficiency of battery；Preparation process of the present invention is simple, equipment input cost
It is low, and with existing production line good compatibility, to existing production line carry out simply be transformed after i.e. can be used.In addition, the present invention
Low manufacture cost, it is simple for process, suitable for being widely popularized and being applicable in.
As a kind of preferred embodiment of the present invention, the fluting setting is avoided in the trepanning, can avoid to screen printing
Brush alum gate line has an impact, and is more suitable for industrialized production.
Trepanning of the present invention is to be linear elongated hole in the hole or the trepanning of array distribution or described open
Hole is the elongated hole of short-term shape, and short-term shape elongated hole is arranged in dotted line shape.The trepanning can also be other shapes, and be arranged in
Other figures.
The depth of trepanning of the present invention is 5~50um.
Hole of the present invention is round hole, a diameter of 20~200um；The width of the linear elongated hole be 20~
200um；The width of the short-term shape elongated hole is 20~200um.
Backside passivation film of the present invention includes back side silicon nitride and pellumina, and the pellumina is located at back side nitrogen
On the upper surface of SiClx film, the thickness of the back side silicon nitride is 50~500nm, the thickness of the pellumina is 2~
50nm。
Front passivating film of the present invention uses silicon nitride film.
Second object of the present invention is to provide a kind of system of the PERC double-sided solar batteries of above-mentioned enhancing back of the body passivation
Preparation Method.
Second object of the present invention is realized by the following technical solutions：A kind of PERC of above-mentioned enhancing back of the body passivation is bis-
The preparation method of face solar cell, it is characterised in that include the following steps：
(1) trepanning is laid at the back side of P-type silicon；
(2) matte is formed in the front and back of P-type silicon；
(3) it is diffused on the front of P-type silicon, forms N-type emitter；
(4) the phosphorosilicate glass formed in diffusion process and periphery P N knots are removed, and the back side of P-type silicon is polished；
(5) to by step, (4) products obtained therefrom is annealed；
(6), in the front deposition front passivating film by step (5) products obtained therefrom, then backside passivation film is overleaf deposited, the back side
Passivating film is partially depositing in trepanning, to increase the area of backside passivation film；Or it sinks at the back side by step (5) products obtained therefrom
Product backside passivation film, backside passivation film are partially depositing in the trepanning, to increase the area of backside passivation film, then it is heavy in front
Product front passivating film；
(7) fluting is opened up on by the step (6) back side of products obtained therefrom, and fluting perforation backside passivation film makes P-type silicon be exposed to out
In slot；
(8) (7) the back up back electrode slurry of products obtained therefrom and dried by step；
(9) (8) the back up aluminium paste of products obtained therefrom and dried by step；
(10) (9) the front print positive electrode slurry of products obtained therefrom and dried by step；
(11), to by step, (10) products obtained therefrom carries out high temperature sintering, back of the body silver electrode, alum gate line and positive silver electrode, alum gate line are formed
It is connected with P-type silicon by slotting；
(12) to by step, (11) products obtained therefrom carries out anti-LID and anneals to obtain the final product.
A kind of preparation method of the PERC double-sided solar batteries of above-mentioned enhancing back of the body passivation, it is characterised in that including following step
Suddenly：
(1) matte is formed in the front and back of P-type silicon；
(2) it is diffused on the front of P-type silicon, forms N-type emitter；
(3) trepanning is laid at the back side of P-type silicon；
(4) the phosphorosilicate glass formed in diffusion process and periphery P N knots are removed, and the back side of P-type silicon is polished；
(5) to by step, (4) products obtained therefrom is annealed；
(6), in the front deposition front passivating film by step (5) products obtained therefrom, then backside passivation film is overleaf deposited, the back side
Passivating film is partially depositing in trepanning, to increase the area of backside passivation film；Or it sinks at the back side by step (5) products obtained therefrom
Product backside passivation film, backside passivation film are partially depositing in the trepanning, to increase the area of backside passivation film, then it is heavy in front
Product front passivating film；
(7) fluting is opened up on by the step (6) back side of products obtained therefrom, and fluting perforation backside passivation film makes P-type silicon be exposed to out
In slot；
(8) (7) the back up back electrode slurry of products obtained therefrom and dried by step；
(9) (8) the back up aluminium paste of products obtained therefrom and dried by step；
(10) (9) the front print positive electrode slurry of products obtained therefrom and dried by step；
(11), to by step, (10) products obtained therefrom carries out high temperature sintering, back of the body silver electrode, alum gate line and positive silver electrode, alum gate line are formed
It is connected with P-type silicon by slotting；
(12) to by step, (11) products obtained therefrom carries out anti-LID and anneals to obtain the final product.
As one embodiment of the present invention, the temperature of annealing is 650~900 degree, and the time is 10~90min, nitrogen
Flow is 1~30slm, and oxygen flow is 1~30slm.
Compared with prior art, the present invention has following significant effect：
(1) the present invention grows backside passivation film in trepanning, increases backside passivation film by laying trepanning in silicon chip back side
Area improves passivation effect, to improve the photoelectric conversion efficiency of battery.
(2) preparation process of the invention is simple, and equipment input cost is low, and with existing production line good compatibility, can be to existing
There is production line can be used after being simply transformed.
(3) the configuration of the present invention is simple, it is at low cost, it is highly practical, suitable for being widely popularized and being applicable in.
Description of the drawings
The following further describes the present invention in detail with reference to the accompanying drawings and specific embodiments.
Fig. 1 is the structural schematic diagram of the embodiment of the present invention 1.
Specific implementation mode
Embodiment 1
As shown in Figure 1, be a kind of PERC double-sided solar batteries of enhancing back of the body passivation of the present invention, including from bottom to up successively
Back of the body silver electrode 1, alum gate line 2, backside passivation film 3, P-type silicon 5, N-type emitter 6, front passivating film 7 and the positive silver electrode 8 of setting,
Front passivating film 7 uses silicon nitride film, and the fluting 9 of perforation backside passivation film 3 is overleaf provided on passivating film 3, and alum gate line 2 passes through
Fluting 9 is connected with P-type silicon 5, lays trepanning 10 at the back side of P-type silicon 5,9 setting of fluting, backside passivation film 3 are avoided in trepanning 10
Divide and be located in trepanning 10, to increase the area of backside passivation film 3.
In the present embodiment, backside passivation film 3 includes back side silicon nitride and pellumina, and pellumina is located at back side nitrogen
On the upper surface of SiClx film, the thickness of back side silicon nitride is 50m, and the thickness of pellumina is 2nm.Trepanning 10 is in array point
The depth of the hole of cloth, hole is 5um, and hole is round hole, a diameter of 20~200um.
The preparation method of the PERC double-sided solar batteries of above-mentioned enhancing back of the body passivation, includes the following steps：
(1) the hole being arranged in array is laid at the back side of P-type silicon 5；
(2) matte is formed in the front and back of P-type silicon 5；
(3) it is diffused on the front of P-type silicon 5, forms N-type emitter 6；
(4) the phosphorosilicate glass formed in diffusion process and periphery P N knots are removed, and the back side of P-type silicon 5 is polished；
(5), to by step, (4) products obtained therefrom is annealed, the temperature of annealing is 650 degree, time 50min, and nitrogen flow is
15slm, oxygen flow 10slm；
(6) in the positive silicon nitride film by step (5) products obtained therefrom, then pellumina and nitridation are overleaf sequentially depositing
Silicon fiml, the silicon nitride film deposited are back side silicon nitride, and pellumina and back side silicon nitride are partially depositing in hole,
To increase the area of pellumina and back side silicon nitride；
(7) avoid hole on by the step (6) back side of products obtained therefrom and open up fluting 9,9 perforation back side silicon nitrides of fluting and
Pellumina makes P-type silicon 5 be exposed in fluting 9；
(8) (7) the back up back electrode slurry of products obtained therefrom and dried by step；
(9) (8) the back up aluminium paste of products obtained therefrom and dried by step；
(10) (9) the front print positive electrode slurry of products obtained therefrom and dried by step；
(11), to by step, (10) products obtained therefrom carries out high temperature sintering, back of the body silver electrode 1, alum gate line 2 and positive silver electrode 8, aluminium are formed
Grid line 2 is connected by fluting 9 with P-type silicon 5；
(12) to by step, (11) products obtained therefrom carries out anti-LID and anneals to obtain the final product.
Embodiment 2
The present embodiment difference from example 1 is that：The thickness of back side silicon nitride is 300nm, pellumina
Thickness is 25nm.Trepanning is linear elongated hole, each elongated hole laid out in parallel；The depth of linear elongated hole is 5um, width
For 20~200um.
The preparation method of the PERC double-sided solar batteries of above-mentioned enhancing back of the body passivation, includes the following steps：
(1) matte is formed in the front and back of P-type silicon 5；
(2) it is diffused on the front of P-type silicon 5, forms N-type emitter 6；
(3) linear elongated hole, each elongated hole laid out in parallel are laid at the back side of P-type silicon 5；
(4) the phosphorosilicate glass formed in diffusion process and periphery P N knots are removed, and the back side of P-type silicon 5 is polished；
(5), to by step, (4) products obtained therefrom is annealed, the temperature of annealing is 900 degree, time 10min, and nitrogen flow is
1slm, oxygen flow 5slm；
(6) pellumina and silicon nitride film are sequentially depositing at the back side by step (5) products obtained therefrom, the silicon nitride film deposited
As back side silicon nitride, pellumina and back side silicon nitride are partially depositing in linear elongated hole, to increase oxidation
The area of aluminium film and back side silicon nitride, then in positive silicon nitride film；
(7) linear trepanning is avoided on by the step (6) back side of products obtained therefrom opens up fluting 9,9 perforation back side silicon nitride of fluting
Silicon fiml and pellumina make P-type silicon 5 be exposed in fluting 9；
(8) (7) the back up back electrode slurry of products obtained therefrom and dried by step；
(9) (8) the back up aluminium paste of products obtained therefrom and dried by step；
(10) (9) the front print positive electrode slurry of products obtained therefrom and dried by step；
(11), to by step, (10) products obtained therefrom carries out high temperature sintering, back of the body silver electrode 1, alum gate line 2 and positive silver electrode 8, aluminium are formed
Grid line 2 is connected by fluting 9 with P-type silicon 5；
(12) to by step, (11) products obtained therefrom carries out anti-LID and anneals to obtain the final product.
Embodiment 3
The present embodiment difference from example 1 is that：The thickness of back side silicon nitride is 500nm, pellumina
Thickness is 50nm.Trepanning is the elongated hole of short-term shape, and short-term shape elongated hole is arranged in dotted line shape and is in laid out in parallel.Short-term shape is long
The depth in shape hole is 5um, and width is 20~200um.
The preparation method of the PERC double-sided solar batteries of above-mentioned enhancing back of the body passivation, includes the following steps：
(1) matte is formed in the front and back of P-type silicon 5；
(2) it is diffused on the front of P-type silicon 5, forms N-type emitter 6；
(3) the elongated hole of short-term shape is set as in the back side cloth of P-type silicon 5, and short-term shape elongated hole is arranged in dotted line shape and in arranged side by side
Arrangement；
(4) the phosphorosilicate glass formed in diffusion process and periphery P N knots are removed, and the back side of P-type silicon 5 is polished；
(5), to by step, (4) products obtained therefrom is annealed, the temperature of annealing is 700 degree, time 90min, and nitrogen flow is
30slm, oxygen flow 20slm；
(6) pellumina and silicon nitride film are sequentially depositing at the back side by step (5) products obtained therefrom, the silicon nitride film deposited
As back side silicon nitride, pellumina and back side silicon nitride are partially depositing in the elongated hole of short-term shape, to increase oxidation
The area of aluminium film and back side silicon nitride, then in positive silicon nitride film；
(7) dotted line shape trepanning is avoided on by the step (6) back side of products obtained therefrom opens up fluting 9,9 perforation back side silicon nitride of fluting
Silicon fiml and pellumina make P-type silicon 5 be exposed in fluting 9；
(8) (7) the back up back electrode slurry of products obtained therefrom and dried by step；
(9) (8) the back up aluminium paste of products obtained therefrom and dried by step；
(10) (9) the front print positive electrode slurry of products obtained therefrom and dried by step；
(11), to by step, (10) products obtained therefrom carries out high temperature sintering, back of the body silver electrode 1, alum gate line 2 and positive silver electrode 8, aluminium are formed
Grid line 2 is connected by fluting 9 with P-type silicon 5；
(12) to by step, (11) products obtained therefrom carries out anti-LID and anneals to obtain the final product.
In other embodiments, the position of fluting can also be slotted also in trepanning while to penetrate through the back side blunt
Change film and be located at the part in trepanning so that alum gate line is connected by slotting with the tapping of P-type silicon.
The implementation of the present invention is not limited to this, and the above according to the present invention is known according to the ordinary skill of this field
Knowledge and customary means, under the premise of not departing from above-mentioned basic fundamental thought of the invention, trepanning of the invention can also be other shapes
Shape, and it is arranged in various other figures；Therefore, the present invention can also make the modification, replacement or change of other diversified forms,
It falls within that scope of the present invention.
Claims (10)
1. it is a kind of enhancing the back of the body passivation PERC double-sided solar batteries, including set gradually from bottom to up back of the body silver electrode, alum gate
Line, backside passivation film, P-type silicon, N-type emitter, front passivating film and positive silver electrode, are provided with perforation in the backside passivation film
The fluting of backside passivation film, the alum gate line are connected by the fluting with P-type silicon, it is characterised in that：In the back of the body of the P-type silicon
Trepanning is laid in face, and the passivating back membrane part is located in the trepanning, to increase the area of backside passivation film.
2. the PERC double-sided solar batteries of enhancing back of the body passivation according to claim 1, it is characterised in that：The trepanning is kept away
Open the fluting setting.
3. the PERC double-sided solar batteries of enhancing back of the body passivation according to claim 2, it is characterised in that：The trepanning is
Hole or the trepanning in array distribution are linear elongated hole or the elongated hole that the trepanning is short-term shape, short-term shape
Elongated hole is arranged in dotted line shape.
4. the PERC double-sided solar batteries of enhancing back of the body passivation according to claim 3, it is characterised in that：The trepanning
Depth is 5~50um.
5. the PERC double-sided solar batteries of enhancing back of the body passivation according to claim 4, it is characterised in that：Described hole is
Round hole, a diameter of 20~200um；The width of the linear elongated hole is 20~200um；The short-term shape elongated hole
Width is 20~200um.
6. the PERC double-sided solar batteries of enhancing back of the body passivation according to claim 5, it is characterised in that：The back side is blunt
It includes back side silicon nitride and pellumina to change film, and the pellumina is located on the upper surface of back side silicon nitride, the back of the body
The thickness of face silicon nitride film is 50~500nm, and the thickness of the pellumina is 2~50nm.
7. the PERC double-sided solar batteries of enhancing back of the body passivation according to claim 6, it is characterised in that：The front is blunt
Change film and uses silicon nitride film.
8. the preparation method of the PERC double-sided solar batteries of enhancing back of the body passivation described in a kind of claim 1, it is characterised in that tool
Body includes the following steps：
(1) trepanning is laid at the back side of P-type silicon；
(2) matte is formed in the front and back of P-type silicon；
(3) it is diffused on the front of P-type silicon, forms N-type emitter；
(4) the phosphorosilicate glass formed in diffusion process and periphery P N knots are removed, and the back side of P-type silicon is polished；
(5) to by step, (4) products obtained therefrom is annealed；
(6), in the front deposition front passivating film by step (5) products obtained therefrom, then backside passivation film is overleaf deposited, passivating back
Membrane part is deposited in trepanning, to increase the area of backside passivation film；Or by step (5) products obtained therefrom backside deposition carry on the back
Face passivating film, backside passivation film are partially depositing in the trepanning, to increase the area of backside passivation film, then front deposition just
Face passivating film；
(7) fluting is opened up on by the step (6) back side of products obtained therefrom, and fluting perforation backside passivation film makes P-type silicon be exposed to fluting
In；
(8) (7) the back up back electrode slurry of products obtained therefrom and dried by step；
(9) (8) the back up aluminium paste of products obtained therefrom and dried by step；
(10) (9) the front print positive electrode slurry of products obtained therefrom and dried by step；
(11), to (10) products obtained therefrom carries out high temperature sintering by step, form back of the body silver electrode, alum gate line and positive silver electrode, alum gate line and pass through
Fluting is connected with P-type silicon；
(12) to by step, (11) products obtained therefrom carries out anti-LID and anneals to obtain the final product.
9. the preparation method of the PERC double-sided solar batteries of enhancing back of the body passivation described in a kind of claim 1, it is characterised in that packet
Include following steps：
(1) matte is formed in the front and back of P-type silicon；
(2) it is diffused on the front of P-type silicon, forms N-type emitter；
(3) trepanning is laid at the back side of P-type silicon；
(4) the phosphorosilicate glass formed in diffusion process and periphery P N knots are removed, and the back side of P-type silicon is polished；
(5) to by step, (4) products obtained therefrom is annealed；
(6), in the front deposition front passivating film by step (5) products obtained therefrom, then backside passivation film is overleaf deposited, passivating back
Membrane part is deposited in trepanning, to increase the area of backside passivation film；Or by step (5) products obtained therefrom backside deposition carry on the back
Face passivating film, backside passivation film are partially depositing in the trepanning, to increase the area of backside passivation film, then front deposition just
Face passivating film；
(7) fluting is opened up on by the step (6) back side of products obtained therefrom, and fluting perforation backside passivation film makes P-type silicon be exposed to fluting
In；
(8) (7) the back up back electrode slurry of products obtained therefrom and dried by step；
(9) (8) the back up aluminium paste of products obtained therefrom and dried by step；
(10) (9) the front print positive electrode slurry of products obtained therefrom and dried by step；
(11), to (10) products obtained therefrom carries out high temperature sintering by step, form back of the body silver electrode, alum gate line and positive silver electrode, alum gate line and pass through
Fluting is connected with P-type silicon；
(12) to by step, (11) products obtained therefrom carries out anti-LID and anneals to obtain the final product.
10. preparation method according to claim 9, it is characterised in that：The temperature of annealing is 650~900 degree, the time 10
~90min, nitrogen flow are 1~30slm, and oxygen flow is 1~30slm.
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| CN114937709A (en) * | 2022-07-22 | 2022-08-23 | 一道新能源科技(衢州)有限公司 | P-type PERC double-sided solar cell module |
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