CN104009120B - The preparation method of N-type crystalline silicon grooving and grid burying battery - Google Patents
The preparation method of N-type crystalline silicon grooving and grid burying battery Download PDFInfo
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- CN104009120B CN104009120B CN201410218129.XA CN201410218129A CN104009120B CN 104009120 B CN104009120 B CN 104009120B CN 201410218129 A CN201410218129 A CN 201410218129A CN 104009120 B CN104009120 B CN 104009120B
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 39
- 239000010703 silicon Substances 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 28
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 12
- 239000005297 pyrex Substances 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 235000008216 herbs Nutrition 0.000 claims abstract description 5
- 210000002268 wool Anatomy 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 43
- 238000000137 annealing Methods 0.000 claims description 32
- 229910052759 nickel Inorganic materials 0.000 claims description 25
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 24
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 24
- 239000002253 acid Substances 0.000 claims description 24
- 238000002156 mixing Methods 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 19
- 238000007747 plating Methods 0.000 claims description 19
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 18
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 16
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 16
- 238000005520 cutting process Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 16
- 229910017604 nitric acid Inorganic materials 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 16
- 238000005245 sintering Methods 0.000 claims description 16
- 238000007639 printing Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- 239000006117 anti-reflective coating Substances 0.000 claims description 12
- 229910052796 boron Inorganic materials 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 claims description 11
- 239000012528 membrane Substances 0.000 claims description 11
- 239000007921 spray Substances 0.000 claims description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- 238000007650 screen-printing Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 7
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 229910015845 BBr3 Inorganic materials 0.000 claims description 6
- 238000007641 inkjet printing Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 4
- 238000010884 ion-beam technique Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 239000002002 slurry Substances 0.000 claims description 4
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 230000007423 decrease Effects 0.000 abstract description 2
- YAIQCYZCSGLAAN-UHFFFAOYSA-N [Si+4].[O-2].[Al+3] Chemical compound [Si+4].[O-2].[Al+3] YAIQCYZCSGLAAN-UHFFFAOYSA-N 0.000 description 5
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002508 contact lithography Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000011536 re-plating Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses the preparation method of a kind of N-type crystalline silicon grooving and grid burying battery, its technological process includes: n type single crystal silicon front lbg, it is also cleaned by making herbs into wool, front diffuses to form PN junction, remove back of the body knot and Pyrex, backside particulate injects P and anneals, and double-sided coating, back side regional area opens film and electrode fabrication.This preparation method decreases shading-area, adds photogenerated current, can preferably collect the electric current that silicon chip produces, and forms good Ohmic contact between metal and silicon chip simultaneously；Preparation process is simple, and equipment investment is few, with the compatible height of conventional production lines；Overcome the shortcoming such as tradition grooving and grid burying battery electrode adhesion, electric conductivity difference.
Description
Technical field
The present invention relates to solaode and manufacture field, the preparation method of a kind of N-type crystalline silicon grooving and grid burying battery.
Background technology
Use the most extensive at coal fossil fuel, under the background that environmental pollution is the most serious, this clean reproducible energy of solar energy is utilized to generate electricity, favored by countries in the world, it is little that grooving and grid burying battery has metal grid lines shading-area, the advantages such as contact resistance loss is little, high current collection efficiency, have certain superiority in the technology application of following photovoltaic.
At present N-type crystalline silicon does substrate, has higher minority carrier life time, it is possible to reduce photocarrier, in solar battery surface and the internal advantage such as compound, is considered as making the primary selection of high-efficiency battery sheet always.The present invention is different from the manufacture method of tradition grooving and grid burying battery electrode, by one layer of nickel of inkjet printing as Seed Layer after, re-plating copper forms the mode of conductive layer, and utilize N-type crystalline silicon to do substrate, merge the skill element such as back point contact and grooving and grid burying and produced high-efficiency battery, solve prior art blank.
Summary of the invention
Goal of the invention: in order to solve the deficiencies in the prior art, the present invention proposes the preparation method of a kind of N-type crystalline silicon grooving and grid burying battery having merged the skill element such as back point contact and inkjet printing, plating and grooving and grid burying, utilize N-type crystalline silicon do substrate and merged the skill element such as back point contact and grooving and grid burying and produce high-efficiency battery, solve prior art blank.
Technical scheme: the preparation method of a kind of N-type crystalline silicon grooving and grid burying battery of the present invention, concrete steps include:
(a): n type single crystal silicon front lbg
The N-type silicon chip selecting resistivity to be 0.3 cm ~ 10 cm, the pulse energy at laser is 0.05uJ ~ 0.8uJ, under conditions of frequency is 50KHz ~ 5000KHz, ns laser instrument is used to slot in substrate side, groove width is 5um ~ 50um, is 5um ~ 100um deeply, and fluting spacing is 0.5mm ~ 1.5mm；
(b): it is also cleaned by making herbs into wool
Sodium hydroxide solution that concentration is 0.5% ~ 2% is carried out chemical attack to n type single crystal silicon surface when 75 DEG C ~ 80 DEG C, prepare the light trapping structure matte of triangle, then it is matte to be carried out after 8% ~ 10% Fluohydric acid. mixing by hydrochloric acid that concentration is 10% ~ 12% and concentration, removes surface impurity；
(c): front diffuses to form PN junction
In the diffusion furnace that temperature is 600-1000 DEG C, use BBr3Carrying out boron diffusion, the diffusingsurface sheet resistance making N-type crystalline silicon is 20-90 ohm/sq, forms PN junction；Or first inject boron source in the cutting face of N-type crystal, ion beam energy be 15keV, ion implanting amount be 1 × 15 cm-2~ 9×15 cm-2, then anneal in the annealing furnace that temperature is 600-1000 DEG C, the N-type crystalline silicon sheet resistance after annealing is 20-90 ohm/sq, forms PN junction；
(d): remove back of the body knot and Pyrex
In etching apparatus, at ambient temperature, after Fluohydric acid. that concentration is 8% ~ 10% and nitric acid mixing that concentration is 35% ~ 40%, the back surface of etching silicon wafer and edge, the most again with removing the Pyrex on surface after the Fluohydric acid. that concentration is 7% ~ 12% and the mixing of nitric acid that concentration is 35% ~ 40%, then dry；
(e): backside particulate injects phosphorus and anneals
Backside particulate in N-type silicon substrate injects phosphorus and makes annealing treatment, and annealing temperature is 600 DEG C-1000 DEG C, forms N+Layer, the sheet resistance scope after annealing is 20-100ohm/sq；
(f) double-sided coating
The antireflective coating that the method for PCVD prepares 50nm ~ 100nm, the antireflective coating of back side plating 50nm ~ 100nm is used in the front of substrate；Or the mode deposition of aluminium oxide of the front atomic deposition at substrate, then the surface deposited silicon nitride at aluminium oxide obtains thickness is 50nm ~ 100nm antireflective coating, back side plating 50nm ~ 100nm antireflective coating；
G () back side regional area opens film
The back side of N-type silicon substrate uses the method for laser to open film, open the figure of film be aperture be the circle of 50um ~ 400um, or width is the line of 50 ~ 200um, and opening film rate is 50% ~ 90%；Or use printing Merk BES slurry at the back side of N-type silicon substrate, thus the method removing silicon nitride film or silicon oxide film opens film, open the figure of film be aperture be the circle of 50um ~ 400um, or width is the line of 50 ~ 200um, and opening film rate is 50% ~ 90%；
(h) electrode fabrication
Using inkjet technology spray printing thickness at the front fluting of battery is 5-100um, width is that the nickel dam of 5-60um forms positive pole, the method using silk screen printing forms the negative pole of partial points contact at the back up silver aluminium paste of battery, and at a temperature of 400 DEG C ~ 800 DEG C, in sintering furnace, carry out common burning, cell piece after sintering plates one layer of layers of copper playing electric action by the way of plating on nickel dam, or on nickel dam, spray printing one layer plays the layers of copper of electric action, and the thickness of layers of copper is 5 um
~ 30um, width is 5 um ~ 90um.
Diffusingsurface described in step c and cutting face are positioned at the same side.
In step f, the antireflective coating of substrate face is silicon oxide and silicon nitride composite membrane or aluminium oxide and silicon nitride composite membrane, the antireflective coating of substrate reverse side is silicon nitride film or silicon oxide film, described silicon oxide silicon nitride composite membrane is one layer of silicon nitride film of growth on the basis of silicon oxide film, and described aluminium oxide silicon nitride composite membrane is one layer of silicon nitride film of growth on the basis of pellumina.
In step h, the width of the pattern of inkjet printing is consistent with cutting width, and the height of the pattern of inkjet printing is more than or equal to the degree of depth of institute's cutting.
Beneficial effect: compared with prior art, the preparation method of N-type crystalline silicon grooving and grid burying battery of the present invention has the advantage that
1, decrease shading-area, add photogenerated current, can preferably collect the electric current that silicon chip produces, between metal and silicon chip, form good Ohmic contact simultaneously；
2, preparation process is simple, and equipment investment is few, with the compatible height of conventional production lines；
3, the shortcoming such as tradition grooving and grid burying battery electrode adhesion, electric conductivity difference is overcome.
Detailed description of the invention
The preparation method of a kind of N-type crystalline silicon grooving and grid burying battery that the present invention proposes, the step of its technological process includes: n type single crystal silicon front lbg, making herbs into wool and it is cleaned, front diffuses to form PN junction, go back of the body knot and Pyrex, backside particulate inject P and anneal, double-sided coating, back side regional area open film and electrode fabrication.
Embodiment
1
The N-type silicon chip selecting resistivity to be 0.3 cm, the pulse energy at laser is 0.05uJ, under conditions of frequency is 50KHzHz, uses ns laser instrument slotting according to positive electrode pattern in substrate side, and groove width is 5um, is 5um deeply, and fluting spacing is 0.5mm；
Sodium hydroxide solution that concentration is 0.5% is carried out chemical attack to n type single crystal silicon surface when 75 DEG C, prepares the light trapping structure matte of triangle, be then matte to be carried out after 8% Fluohydric acid. mixing by hydrochloric acid that concentration is 10% and concentration, remove surface impurity；
In the diffusion furnace that temperature is 600 DEG C, use BBr3Carrying out boron diffusion, the diffusingsurface sheet resistance making N-type crystalline silicon is 20 ohm/sq, forms PN junction；
In etching apparatus, at ambient temperature, after Fluohydric acid. that concentration is 8% and nitric acid mixing that concentration is 35%, the back surface of etching silicon wafer and edge, the most again with removing the Pyrex on surface after the Fluohydric acid. that concentration is 7% and the mixing of nitric acid that concentration is 35%, then dry；
Then the backside particulate in N-type silicon substrate injects phosphorus and makes annealing treatment, and annealing temperature is 600 DEG C, forms N+Layer, the sheet resistance scope after annealing is 20ohm/sq；
Use the method for PCVD to prepare 50nm silicon oxide silicon nitride composite membrane, the silicon nitride film of back side plating 50nm in the front of substrate；
The back side of N-type silicon substrate uses the method for laser to open film, open the figure of film be aperture be the circle of 50um, percent opening is 50%；
Using inkjet technology spray printing thickness at the front fluting of battery is 5um, width is that the nickel dam of 5um forms positive pole, described nickel dam matches with cutting pattern, the method using silk screen printing forms the negative pole of partial points contact at the back up silver aluminium paste of battery, and at a temperature of 400 DEG C, in sintering furnace, carry out common burning, cell piece after sintering plates one layer of layers of copper playing electric action by the way of plating on nickel dam, and the thickness of layers of copper is 5 um, and width is 5 um.
Embodiment
2
The N-type silicon chip selecting resistivity to be 0.4 cm, the pulse energy at laser is 0.1uJ, under conditions of frequency is 100KHz, uses ns laser instrument slotting according to positive electrode pattern in substrate side, and groove width is 10um, is 15um deeply, and fluting spacing is 0.56mm；
N type single crystal silicon surface is carried out chemical attack with the sodium hydroxide solution that concentration is 0.51% when 76 DEG C, prepare the light trapping structure matte of triangle, then it is matte to be carried out after 8.2% Fluohydric acid. mixing by hydrochloric acid that concentration is 10.1% and concentration, removes surface impurity；
In the diffusion furnace that temperature is 700 DEG C, use BBr3Carrying out boron diffusion, the diffusingsurface sheet resistance making N-type crystalline silicon is 25ohm/sq, forms PN junction；
In etching apparatus, at ambient temperature, after Fluohydric acid. that concentration is 8.5% and nitric acid mixing that concentration is 35.5%, the back surface of etching silicon wafer and edge, the most again with removing the Pyrex on surface after the Fluohydric acid. that concentration is 7.5% and the mixing of nitric acid that concentration is 36%, then dry；
Then the backside particulate in N-type silicon substrate injects phosphorus and makes annealing treatment, and annealing temperature is 700 DEG C, forms N+Layer, the sheet resistance scope after annealing is 30ohm/sq；
Use the method for PCVD to prepare 60nm aluminium oxide silicon nitride composite membrane, the silicon oxide film of back side plating 80nm in the front of substrate；
The back side of N-type silicon substrate uses the method for laser to open film, open the figure of film be width be the line of 50um, percent opening is 72%；
Using inkjet technology spray printing thickness at the front fluting of battery is 16um, width is that the nickel dam of 10um forms positive pole, described nickel dam matches with cutting pattern, the method using silk screen printing forms the negative pole of partial points contact at the back up silver aluminium paste of battery, and at a temperature of 450 DEG C, in sintering furnace, carry out common burning, cell piece after sintering plates one layer of layers of copper playing electric action by the way of plating on nickel dam, and the thickness of layers of copper is 16um, and width is 10um.
Embodiment
3
The N-type silicon chip selecting resistivity to be 0.5 cm, the pulse energy at laser is 0.2uJ, under conditions of frequency is 200KHz, uses ns laser instrument slotting according to positive electrode pattern in substrate side, and groove width is 20um, is 30um deeply, and fluting spacing is 0.9mm；
N type single crystal silicon surface is carried out chemical attack with the sodium hydroxide solution that concentration is 0.53% when 77 DEG C, prepares the light trapping structure matte of triangle, then by 10.1% hydrochloric acid and the mixing of 8.6% Fluohydric acid. after matte is carried out, remove surface impurity；
The cutting face of N-type crystal inject boron source, ion beam energy be 15keV, ion implanting amount be 1 × 15 cm-2, then anneal in the annealing furnace that temperature is 600 DEG C, the N-type crystalline silicon sheet resistance after annealing is 20 ohm/sq, forms PN junction；
In etching apparatus, at ambient temperature, after Fluohydric acid. that concentration is 8.5% and nitric acid mixing that concentration is 38%, the back surface of etching silicon wafer and edge, the most again with removing the Pyrex on surface after the Fluohydric acid. that concentration is 7.6% and the mixing of nitric acid that concentration is 35.6%, then dry；
Then the backside particulate in N-type silicon substrate injects phosphorus and makes annealing treatment, and annealing temperature is 650 DEG C, forms N+Layer, the sheet resistance scope after annealing is 26ohm/sq；
At the mode deposition of aluminium oxide of the front atomic deposition of substrate, then the surface deposited silicon nitride at aluminium oxide obtains the aluminium oxide silicon nitride composite membrane that thickness is 90nm, back side plating 80nm silicon nitride film；
Printing Merk is used at the back side of N-type silicon substrate
BES slurry, thus the method removing silicon nitride film opens film, open the figure of film be aperture be the circle of 50um, opening film rate is 72%；
Using inkjet technology spray printing thickness at the front fluting of battery is 35um, width is that the nickel dam of 20um forms positive pole, described nickel dam matches with cutting pattern, the method using silk screen printing forms the negative pole of partial points contact at the back up silver aluminium paste of battery, and at a temperature of 420 DEG C, in sintering furnace, carry out common burning, cell piece after sintering plates one layer of layers of copper playing electric action by the way of plating on nickel dam, and the thickness of layers of copper is 12um, and width is 20um.
Embodiment
4
The N-type silicon chip selecting resistivity to be 0.8 cm, the pulse energy at laser is 0.2uJ, under conditions of frequency is 400KHz, uses ns laser instrument slotting according to positive electrode pattern in substrate side, and groove width is 25um, is 35um deeply, and fluting spacing is 0.9mm；
N type single crystal silicon surface is carried out chemical attack with the sodium hydroxide solution that concentration is 0.56% when 79 DEG C, prepare the light trapping structure matte of triangle, then it is matte to be carried out after 8.6% Fluohydric acid. mixing by hydrochloric acid that concentration is 10.6% and concentration, removes surface impurity；
First inject boron source in the cutting face of N-type crystal, ion beam energy be 15keV, ion implanting amount be 9 × 15 cm-2, then anneal in the annealing furnace that temperature is 750 DEG C, the N-type crystalline silicon sheet resistance after annealing is 40 ohm/sq, forms PN junction；
In etching apparatus, at ambient temperature, after Fluohydric acid. that concentration is 9.2% and nitric acid mixing that concentration is 39%, the back surface of etching silicon wafer and edge, the most again with removing the Pyrex on surface after the Fluohydric acid. that concentration is 9.6% and the mixing of nitric acid that concentration is 39%, then dry；
Then the backside particulate in N-type silicon substrate injects phosphorus and makes annealing treatment, and annealing temperature is 860 DEG C, forms N+Layer, the sheet resistance scope after annealing is 86ohm/sq；
At the mode cvd silicon oxide of the front atomic deposition of substrate, then the surface deposited silicon nitride at silicon oxide obtains thickness is 95nm silicon oxide silicon nitride composite membrane, back side plating 80nm silicon oxide film；
Printing Merk is used at the back side of N-type silicon substrate
BES slurry, thus the method removing silicon oxide film opens film, open the figure of film be width be the line of 200um, opening film rate is 79%；
Using inkjet technology spray printing thickness at the front fluting of battery is 38um, width is that the nickel dam of 25um forms positive pole, described nickel dam matches with cutting pattern, the method using silk screen printing forms the negative pole of partial points contact at the back up aluminum paste of battery, and at a temperature of 780 DEG C, in sintering furnace, carry out common burning, cell piece after sintering plates one layer of layers of copper playing electric action by the way of plating on nickel dam, and the thickness of layers of copper is 29um, and width is 25um.
Embodiment
5
The N-type silicon chip selecting resistivity to be 1.8 cm, the pulse energy at laser is 0.7uJ, under conditions of frequency is 4000KHz, uses ns laser instrument slotting according to positive electrode pattern in substrate side, and groove width is 40um, is 90um deeply, and fluting spacing is 1.4mm；
N type single crystal silicon surface is carried out chemical attack with the sodium hydroxide solution that concentration is 0.59% when 79 DEG C, prepare the light trapping structure matte of triangle, then it is matte to be carried out after 9.6% Fluohydric acid. mixing by hydrochloric acid that concentration is 11.9% and concentration, removes surface impurity；
In the diffusion furnace that temperature is 900 DEG C, use BBr3Carrying out boron diffusion, the diffusingsurface sheet resistance making N-type crystalline silicon is 80 ohm/sq, forms PN junction；
In etching apparatus, at ambient temperature, after Fluohydric acid. that concentration is 9.8% and nitric acid mixing that concentration is 39.5%, the back surface of etching silicon wafer and edge, the most again with removing the Pyrex on surface after the Fluohydric acid. that concentration is 11% and the mixing of nitric acid that concentration is 39%, then dry；
Then the backside particulate in N-type silicon substrate injects boron and makes annealing treatment, and annealing temperature is 900 DEG C, forms N+Layer, the sheet resistance scope after annealing is 90ohm/sq；
Use the method for PCVD to prepare 90nm aluminium oxide silicon nitride composite membrane, the silicon oxide film of back side plating 80nm in the front of substrate；
The back side of N-type silicon substrate uses the method for laser to open film, open the figure of film be width be the line of 200um, percent opening is 79%；
Using inkjet technology spray printing thickness at the front fluting of battery is 90um, width is that the nickel dam of 40um forms positive pole, described nickel dam matches with cutting pattern, the method using silk screen printing forms the negative pole of partial points contact at the back up silver aluminium paste of battery, and at a temperature of 790 DEG C, in sintering furnace, carry out common burning, cell piece after sintering by plating by the way of on nickel dam spray printing one layer rise electric action layers of copper, the thickness of layers of copper is 29um, and width is 40um.
Embodiment
6
The N-type silicon chip selecting resistivity to be 10 cm, the pulse energy at laser is 0.8uJ, under conditions of frequency is 5000KHz, uses ns laser instrument slotting according to positive electrode pattern in substrate side, and groove width is 50um, is 100um deeply, and fluting spacing is 1.5mm；
N type single crystal silicon surface is carried out chemical attack with the sodium hydroxide solution that concentration is 2% when 80 DEG C, prepare the light trapping structure matte of triangle, be then matte to be carried out after 10% Fluohydric acid. mixing by hydrochloric acid that concentration is 12% and concentration, remove surface impurity；
In the diffusion furnace that temperature is 1000 DEG C, use BBr3Carrying out boron diffusion, the diffusingsurface sheet resistance making N-type crystalline silicon is 90 ohm/sq, forms PN junction；
In etching apparatus, at ambient temperature, after Fluohydric acid. that concentration is 10% and nitric acid mixing that concentration is 40%, the back surface of etching silicon wafer and edge, the most again with removing the Pyrex on surface after the Fluohydric acid. that concentration is 12% and the mixing of nitric acid that concentration is 40%, then dry；
Then the backside particulate in N-type silicon substrate injects boron and makes annealing treatment, and annealing temperature is 1000 DEG C, forms N+Layer, the sheet resistance scope after annealing is 100ohm/sq；
Use the method for PCVD to prepare 100nm aluminium oxide silicon nitride composite membrane, the silicon oxide film of back side plating 80nm in the front of substrate；
The back side of N-type silicon substrate uses the method for laser to open film, open the figure of film be aperture be the circle of 200um, percent opening is 80%；
Using inkjet technology spray printing thickness at the front fluting of battery is 100um, width is that the nickel dam of 50um forms positive pole, described nickel dam matches with cutting pattern, the method using silk screen printing forms the negative pole of partial points contact at the back up silver aluminium paste of battery, and at a temperature of 800 DEG C, in sintering furnace, carry out common burning, cell piece after sintering plates one layer of layers of copper playing electric action by the way of plating on nickel dam, and the thickness of layers of copper is 30um, and width is 90um.
Above-described embodiment, only for technology design and the feature of the explanation present invention, its objective is to allow and is familiar with these those skilled in the art and will appreciate that present disclosure and implement according to this, can not limit the scope of the invention with this.All equivalents made according to spirit of the invention or modification, all should contain within protection scope of the present invention.
Claims (4)
1. the preparation method of a N-type crystalline silicon grooving and grid burying battery, it is characterised in that: its technological process includes: n type single crystal silicon front lbg-making herbs into wool also diffuses to form PN and ties-go back of the body knot and Pyrex-backside particulate inject P annealing-double-sided coating-back side regional area and open membrane-electrode and make its cleaning-front；
Concrete steps include:
(a): N type monocrystal silicon front lbg
The N-type silicon chip selecting resistivity to be 0.3 Ω cm ~ 10 Ω cm, pulse energy at laser is 0.05uJ ~ 0.8uJ, under conditions of frequency is 50KHz ~ 5000KHz, ns laser instrument is used to slot in substrate side, groove width is 5um ~ 50um, deep is 5um ~ 100um, and fluting spacing is 0.5mm ~ 1.5mm；
(b): it is also cleaned by making herbs into wool
Sodium hydroxide solution that concentration is 0.5% ~ 2% is carried out chemical attack to N type monocrystalline silicon surface when 75 DEG C ~ 80 DEG C, prepare the light trapping structure matte of triangle, then it is matte to be carried out after 8% ~ 10% Fluohydric acid. mixing by hydrochloric acid that concentration is 10% ~ 12% and concentration, removes surface impurity；
(c): front diffuses to form PN knot
In the diffusion furnace that temperature is 600-1000 DEG C, using BBr3 to carry out boron diffusion, the diffusingsurface sheet resistance making N type crystalline silicon is 20-90 ohm/sq, forms PN knot；Or first inject boron source in the cutting face of N type crystal, ion beam energy be 15keV, ion implanting amount be 1 × 15 cm-2 ~ 9 × 15
Cm-2, then anneal in the annealing furnace that temperature is 600-1000 DEG C, the N type crystalline silicon sheet resistance after annealing is 20-90 ohm/sq, forms PN knot；
(d): remove back of the body knot and Pyrex
In etching apparatus, at ambient temperature, after Fluohydric acid. that concentration is 8% ~ 10% and nitric acid mixing that concentration is 35% ~ 40%, the back surface of etching silicon wafer and edge, the most again with removing the Pyrex on surface after the Fluohydric acid. that concentration is 7% ~ 12% and the mixing of nitric acid that concentration is 35% ~ 40%, then dry；
(e): backside particulate injects phosphorus and anneals
Backside particulate at N type silicon substrate injects phosphorus and makes annealing treatment, and annealing temperature is 600 DEG C-1000 DEG C, forms N+ layer, and the sheet resistance scope after annealing is 20-100ohm/sq；
(f) double-sided coating
The antireflective coating that the method for PCVD prepares 50nm ~ 100nm, the antireflective coating of back side plating 50nm ~ 100nm is used in the front of substrate；Or the mode deposition of aluminium oxide of the front atomic deposition at substrate, then the surface deposited silicon nitride at aluminium oxide obtains thickness is 50nm ~ 100nm antireflective coating, back side plating 50nm ~ 100nm antireflective coating；
G () back side regional area opens film
The back side of N type silicon substrate uses the method for laser to open film, open the figure of film be aperture be the circle of 50um ~ 400um, or width is the line of 50 ~ 200um, and opening film rate is 50% ~ 90%；Or use printing Merk BES slurry at the back side of N type silicon substrate, thus the method removing silicon nitride film or silicon oxide film opens film, open the figure of film be aperture be the circle of 50um ~ 400um, or width is the line of 50 ~ 200um, and opening film rate is 50% ~ 90%；
(h) electrode fabrication
Using inkjet technology spray printing thickness at the front fluting of battery is 5-100um, width is that the nickel dam of 5-60um forms positive pole, the method using silk screen printing forms the negative pole of partial points contact at the back up silver aluminium paste of battery, and at a temperature of 400 DEG C ~ 800 DEG C, in sintering furnace, carry out common burning, cell piece after sintering plates one layer of layers of copper playing electric action by the way of plating on nickel dam, or spray printing one layer plays the layers of copper of electric action on nickel dam, the thickness of layers of copper is 5 um ~ 30um, and width is 5 um ~ 90um.
2. according to the preparation method of the N type crystalline silicon grooving and grid burying battery described in claim 1, it is characterised in that: the diffusingsurface described in step c and cutting face are positioned at the same side.
3. according to the preparation method of the N type crystalline silicon grooving and grid burying battery described in claim 1, it is characterised in that: in step f, the antireflective coating of substrate face is aluminium oxide and silicon nitride composite membrane, and the antireflective coating of substrate back is silicon nitride film or silicon oxide film.
4. according to the preparation method of the N type crystalline silicon grooving and grid burying battery described in claim 1, it is characterised in that: in step h, the width of the pattern of inkjet printing is consistent with cutting width, and the height of the pattern of inkjet printing is more than or equal to the degree of depth of institute's cutting.
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| CN106409956B (en) * | 2016-06-27 | 2018-07-10 | 泰州隆基乐叶光伏科技有限公司 | A kind of N-type crystalline silicon double-sided solar battery structure and preparation method thereof |
| CN106098807A (en) * | 2016-06-27 | 2016-11-09 | 泰州乐叶光伏科技有限公司 | A kind of N-type crystalline silicon solar battery structure and preparation method thereof |
| CN114583013A (en) * | 2022-03-10 | 2022-06-03 | 常州时创能源股份有限公司 | BSG removing method |
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| CN102637776A (en) * | 2012-04-24 | 2012-08-15 | 英利能源（中国）有限公司 | N type solar cell and manufacturing method thereof |
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