CN114583013A - BSG removing method - Google Patents
BSG removing method Download PDFInfo
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- CN114583013A CN114583013A CN202210232143.XA CN202210232143A CN114583013A CN 114583013 A CN114583013 A CN 114583013A CN 202210232143 A CN202210232143 A CN 202210232143A CN 114583013 A CN114583013 A CN 114583013A
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- 238000000034 method Methods 0.000 title claims abstract description 42
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- 239000002253 acid Substances 0.000 claims abstract description 20
- 238000000137 annealing Methods 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 4
- 229910021478 group 5 element Inorganic materials 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000005554 pickling Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 239000006104 solid solution Substances 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 238000010023 transfer printing Methods 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 33
- 230000008569 process Effects 0.000 abstract description 13
- 239000005388 borosilicate glass Substances 0.000 description 34
- 238000004519 manufacturing process Methods 0.000 description 4
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 3
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 3
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 208000028659 discharge Diseases 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
Abstract
The invention discloses a BSG removing method, which comprises the steps of firstly changing a BSG layer on the back of a silicon wafer into an XBSG layer, wherein X is a V-group element; then, carrying out back etching to remove the XBSG layer; the concentration of hydrofluoric acid in back etching can be reduced, the time of back etching can be reduced, the acid consumption can be reduced, the capacity can be improved, the process window can be optimized, the safety risk can be avoided, and the process route of the TOPCon battery can be effectively optimized.
Description
Technical Field
The invention relates to the field of photovoltaics, in particular to a BSG removing method.
Background
In order to improve the proportion of photovoltaic power generation, cost reduction and efficiency improvement are two major lines of photovoltaic manufacturing, the current mainstream photovoltaic cell is a crystalline silicon solar cell, the TOPCon technology becomes one of the most potential novel high-efficiency cell technologies due to the extremely high compatibility of the process route and the traditional PERC cell production line and the obvious efficiency gain, and the related research is increased day by day. At present, the mainstream n-type TOPCon battery is a positive junction battery, the front side needs to adopt boron diffusion for emitter preparation, compared with the phosphorus diffusion process adopted by the traditional PERC battery, the boron diffusion process needs higher temperature for diffusion, the corrosion rate of the formed borosilicate glass (BSG) in hydrofluoric acid is very low, and the removal difficulty is very high, so that the BSG removal process needs longer time and higher-concentration hydrofluoric acid to meet the requirement of batch production, and the corresponding manufacturing cost is increased.
Disclosure of Invention
In order to solve the defects of the prior art, the invention provides a BSG removing method, which comprises the steps of depositing a doping agent containing X on a BSG layer of a silicon wafer, then annealing to change the BSG layer into an XBSG layer, and then removing the XBSG layer through acid cleaning; x is a group V element.
Preferably, the BSG layer is generated by silicon wafer boron diffusion.
Preferably, the BSG layer is a BSG layer on the back side of the silicon wafer.
Preferably, the BSG layer of the silicon wafer is changed into the XBSG layer by adopting an ion implantation mode.
Preferably, the BSG layer of the silicon wafer is changed to an XBSG layer by depositing a dopant containing X on the BSG layer of the silicon wafer and then annealing.
Preferably, the deposition is by vapor deposition, coating, printing or transfer.
Preferably, the dopant containing X is selected from one or more of a compound containing X, a solution containing X and a solid solution containing X.
Preferably, X is selected from one or more of N, P, As, Sb and Bi.
Preferably, the annealing is performed in a tube furnace or a chain furnace.
Preferably, the annealing temperature is 400-800 ℃, and the time is 2-10 min.
Preferably, hydrofluoric acid is used for the acid cleaning.
Preferably, the mass concentration of HF in the hydrofluoric acid is 1-3%.
Preferably, the acid washing is carried out in a chain wet plant.
Preferably, the pickling temperature is 15-35 ℃ and the pickling time is 40-60 s.
The invention has the advantages and beneficial effects that: firstly, changing a BSG layer on the back of a silicon wafer into an XBSG layer, wherein X is a V-group element; then, carrying out back etching to remove the XBSG layer; the concentration of hydrofluoric acid in back etching can be reduced, the time of back etching can be reduced, the acid consumption can be reduced, the capacity can be improved, the process window can be optimized, the safety risk can be avoided, and the process route of the TOPCon battery can be effectively optimized.
The invention also has the following advantages:
1) in the prior art, BSG is directly removed by hydrofluoric acid in back etching, the process difficulty is high, longer process time is required, chain wet process equipment needs to be increased or the productivity needs to be reduced, so that the back etching becomes the bottleneck of TOPCon mass production import, and the problem of residue is caused at a high probability due to insufficient contact between the edge of a silicon wafer and the hydrofluoric acid during the back etching. The method changes the BSG layer on the back of the silicon wafer into the XBSG layer (X is a V-group element, and X can be selected from one or more of N, P, As, Sb and Bi), has higher removal speed than the BSG layer in hydrofluoric acid with the same concentration, can realize the productivity superior to that of a PERC battery, avoids the problem of edge residue, and solves the battery leakage risk caused by back etching.
2) In the prior art, high-concentration hydrofluoric acid (the mass concentration of the hydrofluoric acid is not less than 30%) is required for removing BSG by back etching, which not only causes the increase of the preparation cost of a battery, but also causes the generation of acid mist above a chain type groove body and serious liquid climbing of a water film, thereby causing the problem of over-etching of the front surface of a silicon wafer. The removal of the back XBSG layer does not need high-concentration hydrofluoric acid, and can be performed by adopting low-concentration hydrofluoric acid (the mass concentration of the hydrofluoric acid can be as low as 1 percent), thereby greatly reducing the cost of the liquid medicine, avoiding the risk of over-etching on the front side of the silicon wafer and greatly widening the process window.
Detailed Description
The following further describes embodiments of the present invention with reference to examples. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
The boron diffusion of the silicon wafer can generate a BSG layer, and the BSG layer on the back of the silicon wafer needs to be removed; currently, single-side acid etching (namely back etching) is generally carried out on the back of a silicon wafer in chain wet equipment, and a BSG layer on the back of the silicon wafer is removed; specifically, the method comprises the following steps: hydrofluoric acid with mass concentration not less than 30% is adopted for acid etching, the temperature of the acid etching is 15-35 ℃, and the time is 250-400 s (the belt speed is about 0.7m/min, so as to achieve the contact time). At present, the BSG on the back surface of a silicon wafer is removed by back etching, which has the following problems: the high hydrofluoric acid consumption increases the chemical cost, simultaneously causes higher acid discharge treatment cost, and potential safety hazard brought by high-concentration hydrofluoric acid solution, and the low belt speed leads to capacity loss, so that capacity bottleneck is easily formed, and the market competitiveness of the TOPCon battery is reduced.
The invention provides a BSG removing method for removing a back BSG layer generated by boron diffusion of a silicon wafer, which comprises the following steps: depositing a doping agent containing X on the BSG layer on the back of the silicon wafer in a vapor deposition, coating, printing or transfer printing mode, and then annealing in a tube furnace or a chain furnace to change the BSG layer on the back of the silicon wafer into an XBSG layer; then, performing single-side acid etching (namely back etching) on the back of the silicon wafer in a chain wet method device (such as a chain wet etching device), and removing the XBSG layer on the back of the silicon wafer; x is a group V element; specifically, the method comprises the following steps: the X is selected from one or more of N, P, As, Sb and Bi; the doping agent containing X is selected from one or more of a compound containing X, a solution containing X and a solid solution containing X; the annealing temperature is 400-800 ℃, and the annealing time is 2-10 min; hydrofluoric acid is adopted in the acid etching; the mass concentration of HF in the hydrofluoric acid is 1-3%; the acid etching temperature is 15-35 ℃, and the time is 40-60 s (the belt speed is 2-4 m/min).
The invention also provides another BSG removing method for removing the BSG layer on the back surface generated by the boron diffusion of the silicon wafer, which comprises the following steps: changing the BSG layer on the back of the silicon wafer into an XBSG layer by adopting an ion implantation mode; then, performing single-side acid etching (namely back etching) on the back of the silicon wafer in a chain wet method device (such as a chain wet etching device), and removing the XBSG layer on the back of the silicon wafer; x is a group V element; specifically, the method comprises the following steps: the X is selected from one or more of N, P, As, Sb and Bi; hydrofluoric acid is adopted in the acid etching; the mass concentration of HF in the hydrofluoric acid is 1% -3%; the temperature of the acid etching is 15-35 ℃, and the time is 40-60 s (the belt speed is 2-4 m/min).
The method changes the BSG layer on the back of the silicon wafer into the XBSG layer (X is a V-group element, and X can be selected from one or more of N, P, As, Sb and Bi), and then carries out back etching to remove the XBSG layer, so that the concentration of hydrofluoric acid in the back etching can be reduced, the time of the back etching can be reduced, the acid consumption can be reduced, the capacity can be improved, the process window can be optimized, the safety risk can be avoided, and the process route of the TOPCon battery can be effectively optimized.
The specific implementation case of the invention on the n-type TOPCon battery is as follows:
selecting a resistivity range of 0.8-1.5 ohm.cm and a minority carrier lifetime>The thickness of the n-type monocrystalline silicon wafer is 170 mu m, and the size of the n-type monocrystalline silicon wafer is 166 mm; in KOH and H2O2Removing silicon wafer surface from mixed solutionA damage layer of a face; performing texture making in a KOH solution, forming a pyramid texture on the surface of the silicon wafer, and controlling the size of the pyramid texture to be 1-5 mu m; after texturing is finished, preparing an emitter on the front side of the silicon wafer by adopting B diffusion, wherein the square resistance of the emitter is 110-150 ohm.cm, and a BSG layer is formed on the back and front side of the silicon wafer; after the diffusion of the B is finished, selecting PH3 on the BSG layer on the back of the silicon wafer for ion implantation; then, performing chain annealing at the temperature of about 400 ℃ for about 4 min; the BSG layer on the back of the silicon wafer becomes a PBSG layer; then back etching is carried out in chain wet equipment, hydrofluoric acid with the mass concentration of 1% is adopted for back etching, the temperature of back etching is about 25 ℃, and the time is about 1min (the belt speed is about 2.2 m/min); then, performing alkali polishing on the back surface of the silicon wafer (the alkali polishing and the back etching can be implemented in the same chain wet method equipment), so that the reflectivity of the back surface of the silicon wafer is more than 40%; then preparing a tunneling layer (1-2 nm) + a-S (100-150 nm) on the single surface of the back surface (alkali polished surface) of the silicon wafer in LPCVD (low pressure chemical vapor deposition), and then completing the preparation of the TOPCon battery according to a BSL (barium strontium titanate) process. (wherein, a-S is amorphous silicon)
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (14)
1. A BSG removal method is characterized in that a BSG layer of a silicon wafer is changed into an XBSG layer, and then the XBSG layer is removed through acid cleaning; x is a group V element.
2. The method of claim 1, wherein the BSG layer is generated by silicon wafer boron diffusion.
3. The method of claim 2, wherein the BSG layer is a BSG layer on a backside of the silicon wafer.
4. The method of claim 1, wherein the BSG layer of the silicon wafer is changed to an XBSG layer by ion implantation.
5. The method of claim 1, wherein the BSG layer of the silicon wafer is changed to an XBSG layer by depositing a dopant containing X on the BSG layer of the silicon wafer and then annealing.
6. The method of claim 5, wherein the deposition is performed by vapor deposition, coating, printing, or transfer printing.
7. The method for removing BSG of claim 5, wherein the dopant containing X is selected from one or more of a compound containing X, a solution containing X, and a solid solution containing X.
8. The method for removing BSG from a substrate of any one of claims 1 to 7, wherein X is selected from one or more of N, P, As, Sb and Bi.
9. The BSG removal method of claim 5, wherein the annealing is performed in a tube furnace or a chain furnace.
10. The method of claim 5, wherein the annealing temperature is 400-800 ℃ and the annealing time is 2-10 min.
11. The method of claim 1, wherein the acid cleaning uses hydrofluoric acid.
12. The method of claim 11, wherein the HF concentration in the hydrofluoric acid is 1-3% by mass.
13. The BSG removal method of claim 1, wherein the acid washing is performed in a chain wet apparatus.
14. The method of claim 1, wherein the pickling is performed at a temperature of 15 to 35 ℃ for 40 to 60 seconds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210232143.XA CN114583013A (en) | 2022-03-10 | 2022-03-10 | BSG removing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210232143.XA CN114583013A (en) | 2022-03-10 | 2022-03-10 | BSG removing method |
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| Publication Number | Publication Date |
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| CN114583013A true CN114583013A (en) | 2022-06-03 |
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| CN202210232143.XA Pending CN114583013A (en) | 2022-03-10 | 2022-03-10 | BSG removing method |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05235009A (en) * | 1992-02-20 | 1993-09-10 | Nec Corp | Manufacture of semiconductor integrated circuit device |
| CN1490866A (en) * | 2002-10-14 | 2004-04-21 | 南亚科技股份有限公司 | Method for forming shallow-channel isolation region |
| FR2916660A1 (en) * | 2007-05-28 | 2008-12-05 | Commissariat Energie Atomique | THIN LAYERS OF CONJUGATED POLYMERS CONTAINING INORGANIC NANOPARTICLES AND METHOD FOR THE PRODUCTION THEREOF |
| CN101651116A (en) * | 2008-08-14 | 2010-02-17 | 中芯国际集成电路制造(北京)有限公司 | Method for forming contact hole |
| CN104009120A (en) * | 2014-05-22 | 2014-08-27 | 奥特斯维能源（太仓）有限公司 | Preparation method of N-type crystalline silicon grooved buried contact cell |
| CN107482078A (en) * | 2016-06-02 | 2017-12-15 | 上海神舟新能源发展有限公司 | Silica-based solar cell p-type surface tunnel oxide passivation contact for producing method |
| CN110235229A (en) * | 2017-01-17 | 2019-09-13 | 株式会社电装 | Semiconductor device and its manufacturing method |
| CN111785810A (en) * | 2020-07-15 | 2020-10-16 | 常州时创能源股份有限公司 | Preparation method of N-PERT battery |
| CN113948608A (en) * | 2021-08-31 | 2022-01-18 | 浙江正泰太阳能科技有限公司 | Method for removing plating-around polycrystalline silicon of N-TOPCon battery |
-
2022
- 2022-03-10 CN CN202210232143.XA patent/CN114583013A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05235009A (en) * | 1992-02-20 | 1993-09-10 | Nec Corp | Manufacture of semiconductor integrated circuit device |
| CN1490866A (en) * | 2002-10-14 | 2004-04-21 | 南亚科技股份有限公司 | Method for forming shallow-channel isolation region |
| FR2916660A1 (en) * | 2007-05-28 | 2008-12-05 | Commissariat Energie Atomique | THIN LAYERS OF CONJUGATED POLYMERS CONTAINING INORGANIC NANOPARTICLES AND METHOD FOR THE PRODUCTION THEREOF |
| CN101651116A (en) * | 2008-08-14 | 2010-02-17 | 中芯国际集成电路制造(北京)有限公司 | Method for forming contact hole |
| CN104009120A (en) * | 2014-05-22 | 2014-08-27 | 奥特斯维能源（太仓）有限公司 | Preparation method of N-type crystalline silicon grooved buried contact cell |
| CN107482078A (en) * | 2016-06-02 | 2017-12-15 | 上海神舟新能源发展有限公司 | Silica-based solar cell p-type surface tunnel oxide passivation contact for producing method |
| CN110235229A (en) * | 2017-01-17 | 2019-09-13 | 株式会社电装 | Semiconductor device and its manufacturing method |
| CN111785810A (en) * | 2020-07-15 | 2020-10-16 | 常州时创能源股份有限公司 | Preparation method of N-PERT battery |
| CN113948608A (en) * | 2021-08-31 | 2022-01-18 | 浙江正泰太阳能科技有限公司 | Method for removing plating-around polycrystalline silicon of N-TOPCon battery |
Non-Patent Citations (4)
| Title |
|---|
| （英）泰勒（TAYLOR, P.D.)著，庞银锁译: "《晶闸管的设计与制造》", 31 July 1992, 中国铁道出版社, pages: 203 * |
| 李晓苇;史金超;张伟;沈艳娇;李锋;: "高效率n型硅离子注入双面太阳电池", 半导体技术, no. 03, pages 203 * |
| 王强, 姜斌, 邓宏, 李如东: "VLSI工艺中BPSG薄膜的研究", 电子元件与材料, no. 01 * |
| 黄汉尧主编: "《半导体器件工艺原理》", 30 June 1980, 国防工业出版社, pages: 80 * |
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