CN105826429A - Preparation method of micro nano composite textured structure black silicon and black silicon solar cells - Google Patents
Preparation method of micro nano composite textured structure black silicon and black silicon solar cells Download PDFInfo
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- CN105826429A CN105826429A CN201610310039.2A CN201610310039A CN105826429A CN 105826429 A CN105826429 A CN 105826429A CN 201610310039 A CN201610310039 A CN 201610310039A CN 105826429 A CN105826429 A CN 105826429A
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- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 66
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000002114 nanocomposite Substances 0.000 title abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 238000000889 atomisation Methods 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 35
- 239000010703 silicon Substances 0.000 claims abstract description 35
- 238000005260 corrosion Methods 0.000 claims abstract description 32
- 230000007797 corrosion Effects 0.000 claims abstract description 32
- 238000005530 etching Methods 0.000 claims description 16
- 239000000243 solution Substances 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- 239000011259 mixed solution Substances 0.000 claims description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 30
- 229910001385 heavy metal Inorganic materials 0.000 abstract description 14
- 230000006798 recombination Effects 0.000 abstract description 10
- 238000004140 cleaning Methods 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000005215 recombination Methods 0.000 abstract description 7
- 239000007791 liquid phase Substances 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000009466 transformation Effects 0.000 description 7
- 238000003486 chemical etching Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003518 caustics Substances 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The invention relates to a preparation method of micro nano composite textured structure black silicon and black silicon solar cells. The preparation method of micro nano composite textured structure black silicon includes the following steps: performing atomization and corrosion on a silicon chip to obtain a silicon chip with a textured structure; and performing atomization and corrosion on the obtained silicon chip with the textured structure, so that a hole or line structure with a nanoscale is formed through corrosion in the textured structure and the black silicon with a micro nano composite textured structure can be obtained. The preparation method of micro nano composite textured structure black silicon and black silicon solar cells has the advantages of greatly reducing the corrosion cost, reducing the surface recombination, improving the photoelectric conversion efficiency, and being simple and controllable in operation, and can solve the problems that in a full liquid phase corrosion method, consumption of heavy metal is high; cleaning is not easy; and the nanometer light tripping structure is too deep.
Description
Technical field
The present invention relates to black silicon and manufacture field, be combined the black silicon of suede structure, the preparation method of black silicon solar cell particularly to a kind of micro-nano.
Background technology
High efficiency, low cost are always the target that photovoltaic industry is pursued, for silica-based solar cell, optical loss is one of significant obstacle hindering efficiency of solar cell raising, black silicon is as a kind of novel semi-conductor photoelectric material with nanometer light trapping structure, sunlight is had extremely low reflectance and Radix Rumicis width spectral absorption characteristics, become research and prepare the important materials of high efficiency crystalline silicon solar cell, have important industrialization prospect.But, at present, there is many bottlenecks in the lifting of black silicon solar cell efficiency, and from the point of view of commercial application, the subject matter that black silicon solar cell faces is two aspects: one is photoelectric transformation efficiency problem, and one is production cost problem.Wherein photoelectric transformation efficiency is low is primarily due to the black silicon specific surface area of nanostructured greatly, easily causes surface recombination.And micro-nano is combined the black silicon of suede structure, the high absorptance of micron scale structures and the extremely low reflectance of ultra broadband of conversion ratio and nano-scale structures are combined, efficiently solve traditional silicon based solar battery absorption spectrum ranges narrow, and the problem that nanoscale black silicon structure solar battery efficiency is low, significant to research and development low cost, high efficiency black silicon solar cell.
At present, in addition to laser ablation method, electrochemical method, the method such as reactive ion etching, Plasma immersion ion implantation and metal Assisted Chemical Etching Process has been used to the preparation of silica-based solar cell black silicon material.Wherein, metal Assisted Chemical Etching Process method is simple due to equipment needed thereby, and low cost is reproducible, it is easy to be incorporated into and enjoy favor in current manufacture of solar cells operation.Metal Assisted Chemical Etching Process method is to be catalyzed silicon at HF and oxidizing substance such as H at silicon chip surface depositing noble metal thin film or granule (such as Au, Pt, Ag etc.)2O2The reaction of mixed solution, etch vertical poroid or wire nanostructured.Typical metal auxiliary catalysis etching belongs to full aqueous etching method, is divided into full liquid phase one-step method and two-step method.Full liquid phase one-step method is prepared black silicon and is simplified step and equipment, but course of reaction can consume substantial amounts of heavy metal Ag, remaining too much metallic and can increase the burden of follow-up cleaning, and do not wash clean clearly surface will be caused to become Carrier recombination center, cell piece efficiency declines.Full liquid phase two-step method can reduce the consumption of heavy metal, and it is the easiest to clean, but operates relatively complicated and can increase equipment investment.?
At present, in disclosed black silicon material manufacturing technology, metal Assisted Chemical Etching Process method is used to prepare the patent such as CN104701392A of black silicon, use full liquid phase one-step metal Assisted Chemical Etching Process method in monocrystal silicon micron dimension pyramid surface etch nanostructured, preparation has micro-nano and is combined the black silicon of matte, and the consumption of heavy metal is big, needs to remove in nitric acid and hydrochloric acid respectively the silver of residual, surface is avoided to become Carrier recombination center；In patent CN104393114A, although using full liquid phase two single metal Assisted Chemical Etching Process method to etch nanostructured on polysilicon micron matte, prepare micro-nano combination fine hair dark complexion silicon, but the black silicon of antiradar reflectivity prepared by the method has the deepest structure, the wayward degree of depth, specific surface area is big, adds the quantity in surface carrier complex centre, so that prepared black silicon utilizes alkaline solution be modified etching further, to obtain the degree of depth suitable nanometer light trapping structure.
The shortcoming that traditional method exists, traditional full aqueous etching method is prepared micro-nano and is combined the black silicon of suede structure, one-step method course of reaction can consume substantial amounts of heavy metal Ag, remain too much metallic and can increase the burden of follow-up cleaning, and do not wash clean clearly surface will be caused to become Carrier recombination center, cell piece efficiency declines, the micro-nano combination fine hair dark complexion silicon that two-step method is prepared has the deepest structure, need prepared black silicon utilizes alkaline solution be modified etching further, and operate relatively complicated, and equipment investment can be increased.The shortcoming how avoiding both, develops a heavy metal species consumption little, and cleaning is easy, micro-nano is combined the suitable low cost of matte constructional depth, high efficiency black silicon structure is significant.
Summary of the invention
In view of current technology above shortcomings, the present invention provides a kind of micro-nano to be combined the black silicon of suede structure, the preparation method of black silicon solar cell, the method of the present invention significantly reduces corrosion cost, decrease surface recombination, improve photoelectric transformation efficiency, and be simple to operate controlled, and solve heavy metal in full aqueous etching method and consume problem many, that easy cleaning, the nanometer light trapping structure degree of depth be not the deepest.
The present invention adopts the following technical scheme that
A kind of micro-nano is combined the preparation method of the black silicon of suede structure, comprises the following steps:
Silicon chip is carried out atomization corrosion and obtains the silicon chip with suede structure；
The silicon chip with suede structure obtained carries out atomization corrosion obtain micro-nano and be combined the black silicon of suede structure.
Wherein, being atomized caustic solution, will be atomized into minimum drop by etchant solution in atomising device, these droplet formations atomization environment is full of whole device, and silicon chip is corroded by these droplets in a device, forms nanostructured.The drop that atomization is formed is minimum, easily spreads, thus the etchant solution consumed is considerably less, and the phenomenon that the nanostructured not resulting in corrosion is crossed deeply and heavy-metal residual is too much, significantly reduce corrosion cost, decrease surface recombination, improve photoelectric transformation efficiency, and simple to operate controlled.
As the preferred technical solution of the present invention, in the described step that silicon chip is carried out the silicon chip that atomization corrosion acquisition has suede structure, atomization corrosion under the atomization environment of the mixed solution that silicon chip is placed in potassium hydroxide and isopropanol, it is thus achieved that there is the silicon chip of micro-meter scale pyramid suede structure.
As the preferred technical solution of the present invention, described the silicon chip with suede structure obtained is carried out atomization corrosion obtain micro-nano and be combined in the step of black silicon of suede structure, by obtain the silicon chip with suede structure Fluohydric acid., hydrogen peroxide, silver nitrate mixed solution atomization environment under carry out atomization corrosion, on suede structure, wherein corrode hole or the line structure nanoscale.
The other one side of the present invention, the preparation method of a kind of black silicon solar cell, comprise the following steps:
Remove the silver that micro-nano is combined the black silicon face residual of suede structure；
The black silicon that the micro-nano that remained on surface silver removes is combined suede structure is diffused system knot, etching periphery, deposited silicon nitride, screen printed electrode and sintering successively, it is thus achieved that has micro-nano and is combined the black silicon solar cell of suede structure.
As the preferred technical solution of the present invention, in the step of the silver that described removing micro-nano is combined the black silicon face residual of suede structure, salpeter solution removes the silver that micro-nano is combined the black silicon face residual of suede structure.
Beneficial effects of the present invention: significantly reduce corrosion cost, decrease surface recombination, improve photoelectric transformation efficiency, and simple to operate controlled, and solve heavy metal in full aqueous etching method and consume problem many, that easy cleaning, the nanometer light trapping structure degree of depth be not the deepest.
Accompanying drawing explanation
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, the accompanying drawing used required in embodiment will be briefly described below, apparently, accompanying drawing in describing below is only some embodiments of the present invention, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is scanning electron microscope (SEM) schematic surface that the micro-nano that in the present invention, short time atomization corrosion is formed is combined matte monocrystalline silicon piece.
Fig. 2 is scanning electron microscope (SEM) schematic surface that the micro-nano that in the present invention, long-time atomization corrosion is formed is combined matte monocrystalline silicon piece；
Fig. 3 is the flow chart of the present invention.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art are obtained under not making creative work premise, broadly fall into the scope of protection of the invention.
As shown in Figure 1-Figure 3, a kind of micro-nano is combined the preparation method of the black silicon of suede structure, comprises the following steps,
Step S1: silicon chip is carried out atomization corrosion and obtains the silicon chip with suede structure；It is specially atomization corrosion under the atomization environment of the mixed solution that silicon chip is placed in potassium hydroxide and isopropanol, it is thus achieved that there is the silicon chip of micro-meter scale pyramid suede structure.
Step S2: the silicon chip with suede structure obtained is carried out atomization corrosion and obtains micro-nano and be combined the black silicon of suede structure, be specially by the silicon chip with suede structure obtained Fluohydric acid., hydrogen peroxide, silver nitrate mixed solution atomization environment under carry out atomization corrosion and obtain micro-nano and be combined the black silicon of suede structure, on suede structure, wherein corrode hole or the line structure nanoscale.
The another side of the present invention, the preparation method of a kind of black silicon solar cell, comprise the following steps:
Step a: remove the silver that micro-nano is combined the black silicon face residual of suede structure, it is specially the silver removing the black silicon face residual that micro-nano is combined suede structure in salpeter solution, this micro-nano to be illustrated is combined the black silicon of suede structure, is namely combined the preparation method of the black silicon of suede structure by a kind of micro-nano of the present invention and is prepared.
Step b: the black silicon that the micro-nano that remained on surface silver removes is combined suede structure is diffused system knot, etching periphery, deposited silicon nitride, screen printed electrode and sintering successively, it is thus achieved that has micro-nano and is combined the black silicon solar cell of suede structure.
In the present invention, being atomized caustic solution, will be atomized into minimum drop by etchant solution in atomising device, these droplet formations atomization environment is full of whole device, and silicon chip is corroded by these droplets in a device, forms nanostructured.The drop that atomization is formed is minimum, easily diffusion, thus the etchant solution of consumption is considerably less, and the phenomenon that the nanostructured not resulting in corrosion is crossed deeply and heavy-metal residual is too much, significantly reduce corrosion cost, decrease surface recombination, improve photoelectric transformation efficiency, and it is simple to operate controlled, and solve heavy metal in full aqueous etching method and consume problem many, that easy cleaning, the nanometer light trapping structure degree of depth be not the deepest, reduce production cost, improve photoelectric transformation efficiency, and prepare its micro-nano and be combined the black silicon solar cell of suede structure.
It is an advantage of the invention that utilizing the method for atomization corrosion to replace full aqueous etching method to prepare micro-nano is combined suede structure, greatly reduces the consumption of etchant solution especially heavy metal, cost-effective, it is easy to clean；Low at nano aperture or the line structure reflectance of the corrosion formation of micron pyramid structure surface atomizing, the degree of depth is suitable, decreases surface recombination, and electricity conversion improves；Atomization corrosion not yet changes the basic pattern of pyramid structure, and there is the degree of depth suitable nanometer light trapping structure, need not revise further etching, make follow-up black silicon solar cell preparation obtain good compatibility with conventional batteries technology of preparing, solve the problem that in full aqueous etching method, heavy metal consumption is many, cleaning is difficult to, the nanometer light trapping structure degree of depth is the deepest.This atomization caustic solution can corrode, by regulation and control etching time, atomization flow and solution ratio, the nanostructured different depth and pattern, simple and easy to control.By optimizing atomization etching condition, can corrode on micron pyramid matte and the degree of depth suitable nanometer light trapping structure, prepare antiradar reflectivity, compound reduce, micro-nano that light conversion efficiency is high is combined the black silicon of suede structure, greatly reduce the consumption of heavy metal and etchant solution, it is readily cleaned, low cost, large area can prepare, can be applicable to commercial production.
The above; being only the detailed description of the invention of the present invention, but protection scope of the present invention is not limited thereto, any those skilled in the art is in technical scope disclosed by the invention; the change that can readily occur in or replacement, all should contain within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with described scope of the claims.
Claims (5)
1. a micro-nano is combined the preparation method of the black silicon of suede structure, it is characterised in that comprise the following steps:
Silicon chip is carried out atomization corrosion and obtains the silicon chip with suede structure；
The silicon chip with suede structure obtained carries out atomization corrosion obtain micro-nano and be combined the black silicon of suede structure.
A kind of micro-nano the most according to claim 1 is combined the preparation method of the black silicon of suede structure, it is characterized in that, in the described step that silicon chip is carried out the silicon chip that atomization corrosion acquisition has suede structure, atomization corrosion under the atomization environment of the mixed solution that silicon chip is placed in potassium hydroxide and isopropanol, it is thus achieved that there is the silicon chip of micro-meter scale pyramid suede structure.
3. the preparation method of the black silicon of suede structure it is combined according to the arbitrary described a kind of micro-nano of claim 1-2, it is characterized in that, described the silicon chip with suede structure obtained is carried out atomization corrosion obtain micro-nano and be combined in the step of black silicon of suede structure, by obtain the silicon chip with suede structure Fluohydric acid., hydrogen peroxide, silver nitrate mixed solution atomization environment under carry out atomization corrosion, on suede structure, wherein corrode hole or the line structure nanoscale.
4. the preparation method of a black silicon solar cell, it is characterised in that comprise the following steps:
Remove the silver that micro-nano is combined the black silicon face residual of suede structure；
The black silicon that the micro-nano that remained on surface silver removes is combined suede structure is diffused system knot, etching periphery, deposited silicon nitride, screen printed electrode and sintering successively, it is thus achieved that has micro-nano and is combined the black silicon solar cell of suede structure.
The preparation method of a kind of black silicon solar cell the most according to claim 4, it is characterized in that, in the step of the silver that described removing micro-nano is combined the black silicon face residual of suede structure, salpeter solution removes the silver that micro-nano is combined the black silicon face residual of suede structure.
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Cited By (5)
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| CN106684174A (en) * | 2016-12-22 | 2017-05-17 | 浙江大学 | Surface texturing method of polycrystalline silicon chips |
| CN107217307A (en) * | 2017-06-28 | 2017-09-29 | 常州市瑞泰物资有限公司 | A kind of preparation method of monocrystalline silicon piece texture |
| CN107316917A (en) * | 2017-06-06 | 2017-11-03 | 浙江师范大学 | A kind of method for the monocrystalline silicon suede structure for preparing antiradar reflectivity |
| CN108717948A (en) * | 2018-07-09 | 2018-10-30 | 浙江爱旭太阳能科技有限公司 | A kind of PERC double-sided solar batteries and preparation method thereof of enhancing back of the body passivation |
| CN113380605A (en) * | 2021-06-04 | 2021-09-10 | 中国电子科技集团公司第四十四研究所 | Black silicon manufacturing method based on mechanical grinding auxiliary corrosion |
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