CN105826429B - Preparation method of micro nano composite textured structure black silicon and black silicon solar cells - Google Patents
Preparation method of micro nano composite textured structure black silicon and black silicon solar cells Download PDFInfo
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- CN105826429B CN105826429B CN201610310039.2A CN201610310039A CN105826429B CN 105826429 B CN105826429 B CN 105826429B CN 201610310039 A CN201610310039 A CN 201610310039A CN 105826429 B CN105826429 B CN 105826429B
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- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 57
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000002114 nanocomposite Substances 0.000 title abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- 238000000889 atomisation Methods 0.000 claims abstract description 31
- 238000005260 corrosion Methods 0.000 claims abstract description 31
- 230000007797 corrosion Effects 0.000 claims abstract description 31
- 150000001875 compounds Chemical class 0.000 claims description 31
- 239000000243 solution Substances 0.000 claims description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 6
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 28
- 229910001385 heavy metal Inorganic materials 0.000 abstract description 14
- 230000006798 recombination Effects 0.000 abstract description 11
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 238000004140 cleaning Methods 0.000 abstract description 8
- 238000005215 recombination Methods 0.000 abstract description 7
- 239000007791 liquid phase Substances 0.000 abstract description 5
- 238000005530 etching Methods 0.000 description 14
- 229910052709 silver Inorganic materials 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000003486 chemical etching Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- 230000009466 transformation Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000003670 easy-to-clean Effects 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 239000003518 caustics Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a preparation method of micro nano composite textured structure black silicon and black silicon solar cells. The preparation method of micro nano composite textured structure black silicon includes the following steps: performing atomization and corrosion on a silicon chip to obtain a silicon chip with a textured structure; and performing atomization and corrosion on the obtained silicon chip with the textured structure, so that a hole or line structure with a nanoscale is formed through corrosion in the textured structure and the black silicon with a micro nano composite textured structure can be obtained. The preparation method of micro nano composite textured structure black silicon and black silicon solar cells has the advantages of greatly reducing the corrosion cost, reducing the surface recombination, improving the photoelectric conversion efficiency, and being simple and controllable in operation, and can solve the problems that in a full liquid phase corrosion method, consumption of heavy metal is high; cleaning is not easy; and the nanometer light tripping structure is too deep.
Description
Technical field
The present invention relates to black silicon manufacture field, the black silicon of the compound suede structure of more particularly to a kind of micro-nano, black silicon solar electricity
The preparation method in pond.
Background technology
High efficiency, low cost are always the target that photovoltaic industry is pursued, and for silica-based solar cell, optical loss is resistance
Hinder one of significant obstacle of efficiency of solar cell raising, black silicon is used as a kind of novel semi-conductor photoelectricity with nanometer light trapping structure
Material, has extremely low reflectivity and wide-angle wide spectrum absorption characteristic to sunshine, and the high-efficiency crystal silicon sun is prepared as research
The important materials of energy battery, there is important industrialization prospect.However, at present, the lifting of black silicon solar cell efficiency is present
Many bottlenecks, from from the point of view of commercial application, the subject matter that black silicon solar cell faces is two aspects：One is light
Photoelectric transformation efficiency problem, one is production cost problem.The wherein low black silicon for being primarily due to nanostructured of photoelectric transformation efficiency
Specific surface area is big, easily causes surface recombination.And the black silicon of the compound suede structure of micro-nano, by the absorptance high of micron scale structures and
The extremely low reflectivity of ultra wide band of conversion ratio and nano-scale structures is combined, and efficiently solves traditional silica-based solar cell and absorbs
Spectral region is narrow, and the low problem of the black silicon structure solar battery efficiency of nanoscale, it is inexpensive, efficient black to researching and developing
Silicon solar cell is significant.
At present, in addition to laser ablation method, electrochemical method, reactive ion etching, Plasma immersion ion implantation and
The methods such as metal Assisted Chemical Etching Process have been used to the preparation of silica-based solar cell black silicon material.Wherein, metal assistant chemical is carved
Erosion method is simple due to required equipment, and low cost is reproducible, it is easy to is incorporated into current manufacture of solar cells operation and enjoys
Favor.Metal Assisted Chemical Etching Process method is in silicon chip surface depositing noble metal film or particle（Such as Au, Pt, Ag）To be catalyzed silicon
In HF and oxidizing substance such as H2O2Mixed solution reaction, etch vertical poroid or wire nanostructured.Typical gold
Category auxiliary catalysis etching belongs to full aqueous etching method, is divided into full liquid phase one-step method and two-step method.Full liquid phase one-step method prepares black silicon
Step and equipment are simplified, but course of reaction can consume substantial amounts of heavy metal Ag, after the excessive metallic of residual can increase
The burden of continuous cleaning, and clear not washing clean will cause surface as Carrier recombination center, cell piece efficiency declines.Entirely
Liquid phase two-step method can reduce the consumption of heavy metal, and it is more easy to clean, but operation is relatively complicated and can increase equipment investment.
At present, in disclosed black silicon material manufacturing technology, black silicon is prepared using metal Assisted Chemical Etching Process method
The patent such as A of CN 104701392, using full liquid phase one-step metal Assisted Chemical Etching Process method in monocrystalline silicon micron dimension pyramid table
Face etches nanostructured, prepares the black silicon with the compound matte of micro-nano, and the consumption of heavy metal is big, it is necessary to respectively in nitric acid and salt
The silver of residual is removed in acid, it is to avoid surface turns into Carrier recombination center, in the A of patent CN 104393114, although use full liquid
The single metal Assisted Chemical Etching Process method of phase two etches nanostructured on polysilicon micron matte, has prepared the compound matte of micro-nano black
Silicon, but the black silicon of antiradar reflectivity prepared by the method has very deep structure, is difficult to control depth, and specific surface area is big, increased table
The quantity at face Carrier recombination center, so that etching is further modified using alkaline solution to obtained black silicon, with
Obtain the suitable nanometer light trapping structure of depth.
The shortcoming that conventional method is present, traditional full aqueous etching method prepares the black silicon of the compound suede structure of micro-nano, one
Footwork course of reaction can consume substantial amounts of heavy metal Ag, and remaining excessive metallic can increase the burden of follow-up cleaning,
And clear not washing clean will cause surface as Carrier recombination center, cell piece efficiency declines, the micro-nano that two-step method is prepared
The black silicon of compound matte has very deep structure, it is necessary to further be modified etching using alkaline solution to obtained black silicon, and
Operation is relatively complicated, and can increase equipment investment.How both shortcoming is avoided, and it is small to develop a heavy metal species consumption,
It is significant that cleaning is easily, micro-nano is combined suitable inexpensive, the efficient black silicon structure of matte constructional depth.
The content of the invention
In view of current technology above shortcomings, a kind of black silicon of the compound suede structure of micro-nano of present invention offer, black silicon are too
The preparation method of positive energy battery, the method for the present invention significantly reduces corrosion cost, reduces surface recombination, improves photoelectricity
Conversion efficiency, and simple to operate controllable, and solve in full aqueous etching method that heavy metal consumption is more, easy cleaning, nanometer are sunken
The too deep problem of photo structure depth.
It is of the invention to adopt the following technical scheme that：
A kind of preparation method of micro-nano black silicon of compound suede structure, comprises the following steps：
Silicon chip is carried out into atomization corrosion and obtains the silicon chip with suede structure；
The silicon chip with suede structure for obtaining is carried out into the black silicon that atomization corrosion obtains the compound suede structure of micro-nano.
Wherein, be atomized caustic solution, will etchant solution minimum drop is atomized into atomising device, these drop shapes
Whole device is full of into atomization environment, silicon chip is corroded by these droplets in a device, forms nanostructured.It is atomized the liquid for being formed
Drop is minimum, easily diffusion, thus the etchant solution of consumption is considerably less, and does not result in that the nanostructured of corrosion is too deep and heavy metal
The excessive phenomenon of residual, significantly reduces corrosion cost, reduces surface recombination, improves photoelectric transformation efficiency, and operation
It is simple controllable.
It is described that silicon chip is carried out into atomization corrosion silicon chip of the acquisition with suede structure as the preferred technical solution of the present invention
The step of in, silicon chip is placed in corrosion is atomized under the atomization environment of the mixed solution of potassium hydroxide and isopropanol, obtain have it is micro-
The silicon chip of metrical scale pyramid suede structure.
Used as the preferred technical solution of the present invention, the silicon chip with suede structure by acquisition carries out atomization and corrodes
In the step of being combined the black silicon of suede structure to micro-nano, the silicon chip with suede structure that will be obtained is in hydrofluoric acid, hydrogen peroxide, nitre
Atomization corrosion is carried out under the atomization environment of sour silver mixed solution, wherein corroding the hole or line for nanoscale on suede structure
Structure.
A kind of other one side of the invention, preparation method of black silicon solar cell, comprises the following steps：
Remove the silver of the black silicon face residual of the compound suede structure of micro-nano；
The black silicon of the compound suede structure of micro-nano of remained on surface silver removing is diffused system knot, etching periphery successively, is sunk
Product silicon nitride, screen printed electrode and sintering, obtain the black silicon solar cell with the compound suede structure of micro-nano.
Used as the preferred technical solution of the present invention, the removing micro-nano is combined the silver-colored of the black silicon face residual of suede structure
In step, the silver of the black silicon face residual of the compound suede structure of micro-nano is removed in salpeter solution.
Beneficial effects of the present invention：Corrosion cost is significantly reduced, surface recombination is reduced, opto-electronic conversion effect is improve
Rate, and simple to operate controllable, and solve that heavy metal consumption in full aqueous etching method is more, not easy cleaning, nanometer light trapping structure
The too deep problem of depth.
Brief description of the drawings
Technical scheme in order to illustrate more clearly the embodiments of the present invention, below by to be used needed for embodiment
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for ability
For the those of ordinary skill of domain, on the premise of not paying creative work, can also obtain other attached according to these accompanying drawings
Figure.
Fig. 1 is the SEM of the compound matte monocrystalline silicon piece of micro-nano of short time atomization corrosion formation in the present invention
（SEM）Schematic surface.
Fig. 2 is the SEM of the compound matte monocrystalline silicon piece of micro-nano of the formation of atomization corrosion for a long time in the present invention
（SEM）Schematic surface；
Fig. 3 is flow chart of the invention.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
As shown in Figure 1-Figure 3, a kind of preparation method of the black silicon of the compound suede structure of micro-nano, comprises the following steps,
Step S1：Silicon chip is carried out into atomization corrosion and obtains the silicon chip with suede structure；Silicon chip is specially placed in hydrogen-oxygen
Corrosion is atomized under the atomization environment of the mixed solution for changing potassium and isopropanol, the silicon with micro-meter scale pyramid suede structure is obtained
Piece.
Step S2：The silicon chip with suede structure for obtaining is carried out into atomization corrosion and obtains the black of the compound suede structure of micro-nano
Silicon, the silicon chip with suede structure that will specially obtain is under hydrofluoric acid, hydrogen peroxide, the atomization environment of silver nitrate mixed solution
Carry out atomization corrosion and obtain the black silicon of the compound suede structure of micro-nano, wherein corrode on suede structure the hole for nanoscale or
Cable architecture.
A kind of another side of the invention, preparation method of black silicon solar cell, comprises the following steps：
Step a:The silver of the black silicon face residual of the compound suede structure of micro-nano is removed, is specially removed in salpeter solution micro-
The silver that the black silicon face of compound suede structure of receiving is remained, the black silicon of the compound suede structure of this to be illustrated micro-nano, that is, pass through
A kind of preparation method of micro-nano of the invention black silicon of compound suede structure is prepared.
Step b:The black silicon of the compound suede structure of micro-nano that remained on surface silver is removed is diffused system knot, etching week successively
Side, deposited silicon nitride, screen printed electrode and sintering, obtain the black silicon solar cell with the compound suede structure of micro-nano.
In the present invention, be atomized caustic solution, will etchant solution minimum drop is atomized into atomising device, these
Droplet formation atomization environment is full of whole device, and silicon chip is corroded by these droplets in a device, forms nanostructured.Atomization shape
Into drop it is minimum, easily diffusion, thus consumption etchant solution it is considerably less, and do not result in the nanostructured of corrosion it is too deep and
The excessive phenomenon of heavy-metal residual, significantly reduces corrosion cost, reduces surface recombination, improves photoelectric transformation efficiency,
And it is simple to operate controllable, and solve that heavy metal consumption in full aqueous etching method is more, not easy cleaning, nanometer light trapping structure depth
Too deep problem, reduces production cost, improves photoelectric transformation efficiency, and prepare the black silicon of the compound suede structure of its micro-nano
Solar cell.
It is an advantage of the invention that the compound suede structure of micro-nano is prepared instead of full aqueous etching method using the method for atomization corrosion,
The consumption of etchant solution especially heavy metal is greatly reduced, it is cost-effective, it is easy to clean；In micron pyramid structure surface mist
The nano aperture or cable architecture reflectivity for changing corrosion formation are low, and depth is suitable, reduces surface recombination, and electricity conversion is carried
It is high；Atomization corrosion not yet changes the basic pattern of pyramid structure, and with the suitable nanometer light trapping structure of depth, it is not necessary to enter
One step amendment is etched, and is prepared follow-up black silicon solar cell and is obtained good compatibility with conventional batteries technology of preparing, is solved
Heavy metal consumption is more in full aqueous etching method of having determined, cleaning is difficult, the problem that nanometer light trapping structure depth is too deep.The atomization is corroded
Method can corrode the nanostructured for different depth and pattern, letter by regulating and controlling etching time, atomization flow and solution ratio
It is single easily-controllable.By optimizing atomization etching condition, can corrode on micron pyramid matte and the suitable nanometer light trapping structure of depth,
Prepare antiradar reflectivity, it is compound reduce, the black silicon of the compound suede structure of micro-nano that light conversion efficiency is high, greatly reduce heavy metal
With the consumption of etchant solution, it is easy to clean, low cost, prepared by energy large area, can be applied to industrial production.
The above, specific embodiment only of the invention, but protection scope of the present invention is not limited thereto, and it is any
Those skilled in the art in technical scope disclosed by the invention, all should by the change or replacement that can be readily occurred in
It is included within the scope of the present invention.Therefore, protection scope of the present invention should be with the scope of the claims
It is accurate.
Claims (1)
1. a kind of micro-nano is combined the preparation method of the black silicon of suede structure, it is characterised in that comprise the following steps：
Silicon chip is carried out into atomization corrosion and obtains the silicon chip with suede structure；
The silicon chip with suede structure for obtaining is carried out into the black silicon that atomization corrosion obtains the compound suede structure of micro-nano, it is described by silicon
During piece is carried out the step of atomization corrosion obtains the silicon chip with suede structure, silicon chip is placed in the mixing of potassium hydroxide and isopropanol
Corrosion is atomized under the atomization environment of solution, the silicon chip with micro-meter scale pyramid suede structure, the tool that will be obtained is obtained
During the silicon chip for having suede structure is carried out the step of atomization corrosion obtains the black silicon of micro-nano compound suede structure, will obtain with suede
The silicon chip of face structure carries out atomization corrosion under hydrofluoric acid, hydrogen peroxide, the atomization environment of silver nitrate mixed solution, wherein in matte
Corrode the hole or cable architecture for nanoscale in structure.
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| CN106684174A (en) * | 2016-12-22 | 2017-05-17 | 浙江大学 | Surface texturing method of polycrystalline silicon chips |
| CN107316917A (en) * | 2017-06-06 | 2017-11-03 | 浙江师范大学 | A kind of method for the monocrystalline silicon suede structure for preparing antiradar reflectivity |
| CN107217307B (en) * | 2017-06-28 | 2019-11-08 | 南理工泰兴智能制造研究院有限公司 | A kind of preparation method of monocrystalline silicon piece texture |
| CN108717948A (en) * | 2018-07-09 | 2018-10-30 | 浙江爱旭太阳能科技有限公司 | A kind of PERC double-sided solar batteries and preparation method thereof of enhancing back of the body passivation |
| CN113380605A (en) * | 2021-06-04 | 2021-09-10 | 中国电子科技集团公司第四十四研究所 | Black silicon manufacturing method based on mechanical grinding auxiliary corrosion |
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