CN107217307A - A kind of preparation method of monocrystalline silicon piece texture - Google Patents
A kind of preparation method of monocrystalline silicon piece texture Download PDFInfo
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- CN107217307A CN107217307A CN201710510694.7A CN201710510694A CN107217307A CN 107217307 A CN107217307 A CN 107217307A CN 201710510694 A CN201710510694 A CN 201710510694A CN 107217307 A CN107217307 A CN 107217307A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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Abstract
The present invention relates to a kind of preparation method of monocrystalline silicon piece texture, belong to field of photoelectric technology.Monocrystalline silicon piece is first carried out surface clean by the present invention, soaked after cleaning in matte inorganic agent 1, corrosion immersion is carried out in matte inorganic agent 2 again, carry out first time chemical attack making herbs into wool processing, the silicon chip after first time making herbs into wool is put into culture medium again, using microorganism in monocrystalline silicon sheet surface depositing nano particle, rough hole shape configuration of surface is formed so as to further improve, obtain acting on the polycrystalline silicon suede with anti-reflective effect with good light trapping, improve the photoelectric transformation efficiency of single crystal silicon solar cell, and the formation of this suede structure, the surface area of silicon chip can be increased considerably, be conducive to fully absorbing sunshine.
Description
Technical field
The present invention relates to a kind of preparation method of monocrystalline silicon piece texture, belong to field of photoelectric technology.
Background technology
Surface-texturing prepares light trapping structure in silicon chip surface, and industrially referred to as making herbs into wool, refers to by certain surface
After reason, rough hole shape configuration of surface is presented in solar battery surface, it is possible to decrease the light loss on polycrystalline silicon solar cell surface
Lose, improve the electricity conversion of solar cell.
Reflectivity, conventional making herbs into wool side are generally reduced with the method for surface wool manufacturing in current monocrystalline silicon battery commodity production
Method is alkali making herbs into wool, and anisotropic etch, the pyramid surface texture uniformly gathered are carried out to silicon chip surface using corrosive liquid.
Silicon slice corrosion depth is between 3.4~5.2um after making herbs into wool, but prepared matte still has higher in limit of visible spectrum
Reflectivity, between 18%~24%, the single-side acid process for etching of crystal silicon solar energy battery, application publication number：
CN101976705A, near infrared spectral range（1.1~2.5um）Reflectivity be up to 50%.And existing monocrystalline silicon piece
Etching method using first sour making herbs into wool, the technique of rear alkali making herbs into wool, but the method complex process, fragment rate are high, the reflection of matte
Rate is high, making herbs into wool matte uniformity is not good.
It would therefore be highly desirable to a kind of matte preparation method for reducing reflectivity, improving making herbs into wool matte uniformity be found, with reality
Meaning.
The content of the invention
The technical problems to be solved by the invention：The etching method of existing monocrystalline silicon piece is using first sour making herbs into wool, rear alkali system
The technique of suede, but there is provided a kind of monocrystalline the problem of fragment rate is high, the reflectivity of matte is high, making herbs into wool matte uniformity is not good
The preparation method of silicon wafer suede.
In order to solve the above technical problems, the technical solution adopted by the present invention is：
（1）The surface clean of monocrystalline silicon piece：Monocrystalline silicon piece is chosen, is done after being cleaned by ultrasonic respectively with acetone and deionized water surface
It is dry；
（2）The preparation of matte inorganic agent 1：Count by weight, 20~40 parts of acetums, 5~7 part of three oxidation are chosen respectively
Chromium, 5~10 parts of hydrofluoric acid, 3~5 parts of formic acid solutions, 3~5 parts of tartaric acid, 4~6 parts of hydrogen peroxide and 10~15 parts of glycerine, stirring
Matte inorganic agent 1 is obtained after mixing；
（3）The preparation of matte inorganic agent 2：Count by weight, 5~10 parts of surfactants, 2~4 parts of hydroxides are chosen respectively
Calcium, 15~20 parts of potassium hydroxide, 5~10 parts of sodium hydroxides and 100~120 parts of water, obtain matte inorganic agent 2 after mixing；
（4）Monocrystalline silicon piece after the processing of first time matte：Monocrystalline silicon piece is added in matte inorganic agent 1 after cleaning, and is taken after immersion
Go out, be put into matte inorganic agent 2 and soak after being cleaned with deionized water, dried after being washed with deionized；
（5）The preparation of female salting liquid：Count by weight, 3~6 parts of yttrium nitrates, 4~8 parts of ytterbium oxides, 5~9 parts of nitre are chosen respectively
Sour aluminium, 100~120 parts of salpeter solutions are heated to 60~80 DEG C, are filtered after stirring mixing, obtain filter residue, in mass ratio 1:100, will
Filter residue is added in deionized water, is stirred；
（6）The preparation of fluid nutrient medium：Agent by weight, choose respectively 4~6 parts of calcium acetates, 10~20 parts of glucose, 8~
10 parts of yeast extracts, 10~15 parts of agar and 800~1000 parts of deionized waters, stirring mixing；
（7）Monocrystalline silicon piece after the processing of first time matte：In mass ratio 1:50, the monocrystalline silicon piece after the processing of first time matte is put
Enter in fluid nutrient medium, and be inoculated with the bacterial strain that bacterium number is GLRT202Ca, lucifuge culture is cultivated in backward fluid nutrient medium and is added dropwise
Female salting liquid, is stirred after dropwise addition, is 8.5~9.0 with sodium bicarbonate solution regulation pH, static after regulation to place 2~4 days, is taken out
Monocrystalline silicon piece, rinses behind surface and dries, and in 700~750 DEG C of 30~50min of temperature lower calcination after drying, is taken out after calcining, you can
Obtain the monocrystalline silicon piece after matte processing.
Step（2）Described in surfactant be Tween-80, Arlacel-80, neopelex, dodecyl
One or more in sodium sulphate.
Step（4）In soak time in matte inorganic agent 1 be 70~100s, during immersion in matte inorganic agent 2
Between be 40~60s.
Step（5）Described in salpeter solution mass fraction be 60%.
Step（7）Described in lucifuge culture temperature be 30~35 DEG C, lucifuge incubation time be 3~5 days.
Step（7）Described in female salting liquid quality be fluid nutrient medium quality 3~5%.
The present invention is compared with other method, and advantageous effects are：
（1）The present invention first using acid matte inorganic agent 1, is first pre-processed to monocrystalline silicon sheet surface, can be in list after pretreatment
Crystal silicon chip surface forms open structure, and the elemental silicon of monocrystalline silicon sheet surface is oxidized into silica, reused at alkaline matte
Agent 2 is managed, can be dissolved the oxide of silicon by chemical reaction, corrosion rate is identical, anti-reflective effect can be obtained good
Matte, strengthen light absorbs, the monocrystalline silicon suede with compared with antiradar reflectivity；
（2）Monocrystalline silicon piece is put into fluid nutrient medium by the present invention, and precipitation of calcium carbonate can be generated by first being added into fluid nutrient medium
Strain, nano-calcium carbonate calcium precipitate can be generated after culture, monocrystalline silicon sheet surface is deposited on, be subsequently added the materials such as yttrium nitrate preparation
Obtained female salting liquid, the particle deposition in female salt can further be formed rough hole shape by saccharomycete after dropwise addition
Configuration of surface, obtains the crystal silicon matte with the effect of good light trapping and anti-reflective effect, improves the light of single crystal silicon solar cell
Photoelectric transformation efficiency, and the formation of this suede structure, can increase considerably the surface area of silicon chip, be conducive to sunshine
Fully absorb.
Embodiment
The p-type quasi-monocrystalline silicon that 10~20 silicon chips are 156mm × 156mm is chosen, respectively with acetone and deionization water meter
Face is taken out after being cleaned by ultrasonic, and is dried and is dried after monocrystalline silicon sheet surface at a temperature of 40~50 DEG C, the monocrystalline silicon piece after must cleaning；Press
Parts by weight meter, chooses 20~40 parts of acetums of mass fraction 8%, 5~7 parts of chromium trioxides, 5~10 parts of hydrofluoric acid, 3 respectively
~5 parts of formic acid solutions of mass fraction 5%, 3~5 parts of tartaric acid solutions of mass fraction 10%, 4~6 parts of hydrogen peroxide and 10~15 parts are sweet
Matte inorganic agent 1 is obtained after oil, 10~15min of stirring mixing；Count by weight, 5~10 parts of surfactants, 2 are chosen respectively
~4 parts of calcium hydroxides, 15~20 parts of potassium hydroxide, 5~10 parts of sodium hydroxides and 100~120 parts of water, matte is obtained after stirring mixing
Inorganic agent 2；In mass ratio 1:30 add monocrystalline silicon piece after cleaning in matte inorganic agent 1, take out, spend after 70~100s of immersion
Ionized water is put into matte inorganic agent 2 after cleaning 2~4 times, is taken out, is washed with deionized after 2~4 times after 40~60s of immersion
It is put into baking oven, 2~4h is dried at a temperature of 50~60 DEG C, obtains the monocrystalline silicon piece after the processing of first time matte；By weight
Meter, chooses 3~6 parts of yttrium nitrates, 4~8 parts of ytterbium oxides, 5~9 parts of aluminum nitrates respectively, and 100~120 parts of nitric acid of mass fraction 60% are molten
Liquid, filters after being heated to 60~80 DEG C of 30~60min of stirring mixing, obtains filter residue, in mass ratio 1:100, by filter residue add go from
In sub- water, stir to obtain female salting liquid；Agent by weight, chooses 4~6 parts of calcium acetates, 10~20 parts of glucose, 8 respectively
~10 parts of yeast extracts, 10~15 parts of agar and 800~1000 parts of deionized waters, fluid nutrient medium is obtained after stirring mixing；By quality
Than 1:50, the monocrystalline silicon piece after the processing of first time matte is put into fluid nutrient medium, and 6~10 plants of bacterium number of inoculation are
GLRT202Ca bacterial strain, lucifuge culture 3~5 days at a temperature of 30~35 DEG C are cultivated and liquid training are added dropwise in backward fluid nutrient medium
The female salting liquid of matrix amount 3~5% is supported, 2~3h of stirring mixing, pH is adjusted with the sodium bicarbonate solution of mass fraction 15% after completion of dropwise addition
It is static after regulation to place 2~4 days for 8.5~9.0, monocrystalline silicon piece is taken out after placement, with behind deionized water rinsing surface 2~4 times
It is put into baking oven and dries, in 700~750 DEG C of 30~50min of temperature lower calcination after drying, is taken out after calcining, you can obtain at matte
Monocrystalline silicon piece after reason.
Described surfactant is in Tween-80, Arlacel-80, neopelex, lauryl sodium sulfate
It is one or more.
Example 1
The p-type quasi-monocrystalline silicon that 10 silicon chips are 156mm × 156mm is chosen, it is clear with acetone and deionized water surface ultrasound respectively
Taken out after washing, dry and dried after monocrystalline silicon sheet surface at a temperature of 40, the monocrystalline silicon piece after must cleaning；Count by weight, point
Not Xuan Qu 5 parts of Arlacel-80s, 2 parts of calcium hydroxides, 15 parts of potassium hydroxide, 5 parts of sodium hydroxides and 100 parts of water, stirring mixing after suede
Face inorganic agent 1；Count by weight, 20 parts of acetums of mass fraction 8%, 5 parts of chromium trioxides, 5 parts of hydrofluoric acid, 3 are chosen respectively
Part mass fraction 5% formic acid solution, 3 parts of tartaric acid solutions of mass fraction 10%, 4 parts of hydrogen peroxide and 10 parts of glycerine, stirring mixing
Matte inorganic agent 2 is obtained after 10min；In mass ratio 1:30 add monocrystalline silicon piece after cleaning in matte inorganic agent 1, after immersion 70s
Take out, cleaned and be put into after 2 times in matte inorganic agent 2 with deionized water, take out, put after being washed with deionized 2 times after immersion 40s
Enter in baking oven, 2h is dried at a temperature of 50 DEG C, obtain the monocrystalline silicon piece after the processing of first time matte；Count, select respectively by weight
3 parts of yttrium nitrates, 4 parts of ytterbium oxides, 5 parts of aluminum nitrates are taken, 100 parts of salpeter solutions of mass fraction 60% are heated to 60 DEG C of stirring mixing
Filtered after 30min, obtain filter residue, in mass ratio 1:100, filter residue is added in deionized water, stir to obtain female salting liquid；By weight
Number agent is measured, 4 parts of calcium acetates, 10 parts of glucose, 8 parts of yeast extracts, 10 parts of agar and 800 parts of deionized waters, stirring are chosen respectively
Fluid nutrient medium is obtained after mixing；In mass ratio 1:50, the monocrystalline silicon piece after the processing of first time matte is put into fluid nutrient medium,
And the bacterial strain that 6 plants of bacterium number are GLRT202Ca is inoculated with, lucifuge culture 3 days at a temperature of 30 DEG C are cultivated in backward fluid nutrient medium and dripped
The female salting liquid of liquid feeding body culture medium quality 3%, stirring mixing 2h, is adjusted with the sodium bicarbonate solution of mass fraction 15% after completion of dropwise addition
PH is 8.5, static after regulation to place 2 days, and monocrystalline silicon piece is taken out after placement, with being put into baking oven behind deionized water rinsing surface 2 times
Middle drying, in 700 DEG C of temperature lower calcination 30min after drying, takes out after calcining, you can obtain the monocrystalline silicon piece after matte processing.
Example 2
The p-type quasi-monocrystalline silicon that 15 silicon chips are 156mm × 156mm is chosen, it is clear with acetone and deionized water surface ultrasound respectively
Taken out after washing, dry and dried after monocrystalline silicon sheet surface at a temperature of 45 DEG C, the monocrystalline silicon piece after must cleaning；Count by weight,
8 parts of neopelexes, 3 parts of calcium hydroxides, 17 parts of potassium hydroxide, 8 parts of sodium hydroxides and 110 parts of water are chosen respectively, are stirred
Mix and matte inorganic agent 1 is obtained after mixing；Count by weight, 30 parts of acetums of mass fraction 8%, 6 part of three oxidation are chosen respectively
Chromium, 7 parts of hydrofluoric acid, 4 parts of formic acid solutions of mass fraction 5%, 4 parts of tartaric acid solutions of mass fraction 10%, 5 parts of hydrogen peroxide and 13 parts are sweet
Matte inorganic agent 2 is obtained after oil, stirring mixing 13min；In mass ratio 1:Monocrystalline silicon piece after cleaning is added matte inorganic agent 1 by 30
In, taken out after immersion 80s, cleaned and be put into after 3 times in matte inorganic agent 2 with deionized water, taken out after immersion 50s, use deionization
It is put into after water washing 3 times in baking oven, 3h is dried at a temperature of 55 DEG C, obtains the monocrystalline silicon piece after the processing of first time matte；By weight
Number meter, chooses 4 parts of yttrium nitrates, 6 parts of ytterbium oxides, 7 parts of aluminum nitrates respectively, and 110 parts of salpeter solutions of mass fraction 60% are heated to
Filtered after 70 DEG C of stirring mixing 40min, obtain filter residue, in mass ratio 1:100, filter residue is added in deionized water, stirred
Female salting liquid；Agent by weight, chooses 5 parts of calcium acetates, 15 parts of glucose, 9 parts of yeast extracts, 12 parts of agar and 900 parts respectively
Deionized water, fluid nutrient medium is obtained after stirring mixing；In mass ratio 1:50, the monocrystalline silicon piece after the processing of first time matte is put into
In fluid nutrient medium, and the bacterial strain that 8 plants of bacterium number are GLRT202Ca is inoculated with, lucifuge culture 4 days at a temperature of 33 DEG C, culture is backward
The female salting liquid of liquid culture matrix amount 4% is added dropwise in fluid nutrient medium, stirring mixing 2.5h after completion of dropwise addition, with mass fraction 15%
Sodium bicarbonate solution regulation pH is 8.7, static after regulation to place 3 days, and monocrystalline silicon piece is taken out after placement, deionized water rinsing table is used
Be put into baking oven and dry behind face 3 times, in 730 DEG C of temperature lower calcination 40min after drying, taken out after calcining, you can matte processing
Monocrystalline silicon piece afterwards.
Example 3
The p-type quasi-monocrystalline silicon that 20 silicon chips are 156mm × 156mm is chosen, it is clear with acetone and deionized water surface ultrasound respectively
Taken out after washing, dry and dried after monocrystalline silicon sheet surface at a temperature of 50 DEG C, the monocrystalline silicon piece after must cleaning；Count by weight,
10 parts of lauryl sodium sulfate, 4 parts of calcium hydroxides, 20 parts of potassium hydroxide, 10 parts of sodium hydroxides and 120 parts of water are chosen respectively, are stirred
Mix and matte inorganic agent 1 is obtained after mixing；Count by weight, 40 parts of acetums of mass fraction 8%, 7 part of three oxidation are chosen respectively
Chromium, 10 parts of hydrofluoric acid, 5 parts of formic acid solutions of mass fraction 5%, 5 parts of tartaric acid solutions of mass fraction 10%, 6 parts of hydrogen peroxide and 15 parts
Matte inorganic agent 2 is obtained after glycerine, stirring mixing 15min；In mass ratio 1:Monocrystalline silicon piece after cleaning is added matte inorganic agent 1 by 30
In, taken out after immersion 100s, cleaned and be put into after 4 times in matte inorganic agent 2 with deionized water, taken out after immersion 60s, use deionization
It is put into after water washing 4 times in baking oven, 4h is dried at a temperature of 60 DEG C, obtains the monocrystalline silicon piece after the processing of first time matte；By weight
Number meter, chooses 6 parts of yttrium nitrates, 8 parts of ytterbium oxides, 9 parts of aluminum nitrates respectively, and 120 parts of salpeter solutions of mass fraction 60% are heated to
Filtered after 80 DEG C of stirring mixing 60min, obtain filter residue, in mass ratio 1:100, filter residue is added in deionized water, stirred
Female salting liquid；Agent by weight, chooses 6 parts of calcium acetates, 20 parts of glucose, 10 parts of yeast extracts, 15 parts of agar and 1000 respectively
Part deionized water, fluid nutrient medium is obtained after stirring mixing；In mass ratio 1:50, the monocrystalline silicon piece after the processing of first time matte is put
Enter in fluid nutrient medium, and be inoculated with the bacterial strain that 10 plants of bacterium number are GLRT202Ca, lucifuge culture 5 days at a temperature of 35 DEG C, after culture
The female salting liquid of liquid culture matrix amount 5% is added dropwise into fluid nutrient medium, stirring mixing 3h after completion of dropwise addition, with mass fraction 15%
Sodium bicarbonate solution regulation pH is 9.0, static after regulation to place 4 days, and monocrystalline silicon piece is taken out after placement, deionized water rinsing table is used
Be put into baking oven and dry behind face 4 times, in 750 DEG C of temperature lower calcination 50min after drying, taken out after calcining, you can matte processing
Monocrystalline silicon piece afterwards.
Reference examples：Chemical acid etch is carried out to the monocrystalline silicon piece after optical mask, process conditions are：Etch formula of liquid HF:
HNO3:H2O:CH3COOH=1:6:3:1,60~100s is etched at room temperature, you can obtain the monocrystalline silicon piece after matte processing.
Example 1~3 and reference examples indices are as shown in table 1.
Table 1：
As shown in Table 1, the etching method that the present invention is provided, can effectively reduce shoulder height between crystal boundary, improve monocrystalline silicon piece outward appearance,
Gained suede structure is tiny and uniform, reduces reflectivity, improves photoelectric transformation efficiency.
Claims (6)
1. a kind of preparation method of monocrystalline silicon piece texture, it is characterised in that specifically preparation process is：
The surface clean of monocrystalline silicon piece：Monocrystalline silicon piece is chosen, is dried after being cleaned by ultrasonic respectively with acetone and deionized water surface；
The preparation of matte inorganic agent 1：Count by weight, 20~40 parts of acetums, 5~7 parts of chromium trioxides, 5 are chosen respectively
~10 parts of hydrofluoric acid, 3~5 parts of formic acid solutions, 3~5 parts of tartaric acid, 4~6 parts of hydrogen peroxide and 10~15 parts of glycerine, stirring mixing
Matte inorganic agent 1 is obtained afterwards；
The preparation of matte inorganic agent 2：Count by weight, choose respectively 5~10 parts of surfactants, 2~4 parts of calcium hydroxide,
15~20 parts of potassium hydroxide, 5~10 parts of sodium hydroxides and 100~120 parts of water, obtain matte inorganic agent 2 after mixing；
Monocrystalline silicon piece after the processing of first time matte：Monocrystalline silicon piece is added in matte inorganic agent 1 after cleaning, and is taken out after immersion,
It is put into matte inorganic agent 2 and soaks after being cleaned with deionized water, is dried after being washed with deionized；
The preparation of female salting liquid：Count by weight, 3~6 parts of yttrium nitrates, 4~8 parts of ytterbium oxides, 5~9 parts of nitric acid are chosen respectively
Aluminium, 100~120 parts of salpeter solutions are heated to 60~80 DEG C, are filtered after stirring mixing, obtain filter residue, in mass ratio 1:100, it will filter
Slag is added in deionized water, is stirred；
The preparation of fluid nutrient medium：Agent by weight, choose respectively 4~6 parts of calcium acetates, 10~20 parts of glucose, 8~10 parts
Yeast extract, 10~15 parts of agar and 800~1000 parts of deionized waters, stirring mixing；
Monocrystalline silicon piece after the processing of first time matte：In mass ratio 1:50, the monocrystalline silicon piece after the processing of first time matte is put into
In fluid nutrient medium, and the bacterial strain that bacterium number is GLRT202Ca is inoculated with, lucifuge culture is cultivated and mother is added dropwise in backward fluid nutrient medium
Salting liquid, is stirred after dropwise addition, is 8.5~9.0 with sodium bicarbonate solution regulation pH, static after regulation to place 2~4 days, takes out single
Crystal silicon chip, rinses behind surface and dries, and in 700~750 DEG C of 30~50min of temperature lower calcination after drying, is taken out after calcining, you can
Monocrystalline silicon piece after matte processing.
2. a kind of preparation method of monocrystalline silicon piece texture according to claim 1, it is characterised in that：Step（2）Described in
Surfactant be Tween-80, Arlacel-80, neopelex, lauryl sodium sulfate in one or more.
3. a kind of preparation method of monocrystalline silicon piece texture according to claim 1, it is characterised in that：Step（4）In in suede
Soak time in face inorganic agent 1 is 70~100s, and the soak time in matte inorganic agent 2 is 40~60s.
4. a kind of preparation method of monocrystalline silicon piece texture according to claim 1, it is characterised in that：Step（5）Described in
Salpeter solution mass fraction be 60%.
5. a kind of preparation method of monocrystalline silicon piece texture according to claim 1, it is characterised in that：Step（7）Described in
Lucifuge culture temperature be 30~35 DEG C, lucifuge incubation time be 3~5 days.
6. a kind of preparation method of monocrystalline silicon piece texture according to claim 1, it is characterised in that：Step（7）Described in
Female salting liquid quality be fluid nutrient medium quality 3~5%.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114808141A (en) * | 2022-06-23 | 2022-07-29 | 福建晶安光电有限公司 | Substrate modification processing method and manufacturing method of semiconductor light-emitting device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03219000A (en) * | 1989-11-09 | 1991-09-26 | Nippon Steel Corp | Etching method and washing method for silicon wafer |
| EP2019420A1 (en) * | 2003-05-07 | 2009-01-28 | Universität Konstanz | Device for texturising surfaces of silicon discs and uses of this device |
| JP2009084091A (en) * | 2007-09-28 | 2009-04-23 | Sumco Corp | Etching liquid and method for manufacturing silicon wafer |
| CN102299207A (en) * | 2011-08-30 | 2011-12-28 | 华北电力大学 | Method for manufacturing porous pyramid-type silicon surface light trapping structure for solar cell |
| CN103696021A (en) * | 2013-12-23 | 2014-04-02 | 泰通(泰州)工业有限公司 | Polycrystalline velvet additive-matched surface treatment technology after felting |
| CN104393114A (en) * | 2014-11-17 | 2015-03-04 | 中国电子科技集团公司第四十八研究所 | Preparation method of polycrystalline black silicon of micro-nano composite suede structure |
| CN105826429A (en) * | 2016-05-12 | 2016-08-03 | 华南师范大学 | Preparation method of micro nano composite textured structure black silicon and black silicon solar cells |
| CN106521635A (en) * | 2016-11-17 | 2017-03-22 | 上海交通大学 | All-solution preparation method of nanoscale pyramid suede on silicon surface |
-
2017
- 2017-06-28 CN CN201710510694.7A patent/CN107217307B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03219000A (en) * | 1989-11-09 | 1991-09-26 | Nippon Steel Corp | Etching method and washing method for silicon wafer |
| EP2019420A1 (en) * | 2003-05-07 | 2009-01-28 | Universität Konstanz | Device for texturising surfaces of silicon discs and uses of this device |
| JP2009084091A (en) * | 2007-09-28 | 2009-04-23 | Sumco Corp | Etching liquid and method for manufacturing silicon wafer |
| CN102299207A (en) * | 2011-08-30 | 2011-12-28 | 华北电力大学 | Method for manufacturing porous pyramid-type silicon surface light trapping structure for solar cell |
| CN103696021A (en) * | 2013-12-23 | 2014-04-02 | 泰通(泰州)工业有限公司 | Polycrystalline velvet additive-matched surface treatment technology after felting |
| CN104393114A (en) * | 2014-11-17 | 2015-03-04 | 中国电子科技集团公司第四十八研究所 | Preparation method of polycrystalline black silicon of micro-nano composite suede structure |
| CN105826429A (en) * | 2016-05-12 | 2016-08-03 | 华南师范大学 | Preparation method of micro nano composite textured structure black silicon and black silicon solar cells |
| CN106521635A (en) * | 2016-11-17 | 2017-03-22 | 上海交通大学 | All-solution preparation method of nanoscale pyramid suede on silicon surface |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114808141A (en) * | 2022-06-23 | 2022-07-29 | 福建晶安光电有限公司 | Substrate modification processing method and manufacturing method of semiconductor light-emitting device |
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