CN106521635A - All-solution preparation method of nanoscale pyramid suede on silicon surface - Google Patents
All-solution preparation method of nanoscale pyramid suede on silicon surface Download PDFInfo
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- CN106521635A CN106521635A CN201611012727.7A CN201611012727A CN106521635A CN 106521635 A CN106521635 A CN 106521635A CN 201611012727 A CN201611012727 A CN 201611012727A CN 106521635 A CN106521635 A CN 106521635A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 108
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 108
- 239000010703 silicon Substances 0.000 title claims abstract description 108
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000000243 solution Substances 0.000 claims abstract description 26
- 239000002253 acid Substances 0.000 claims abstract description 23
- 239000002082 metal nanoparticle Substances 0.000 claims abstract description 17
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 11
- 239000011259 mixed solution Substances 0.000 claims abstract description 8
- 239000000654 additive Substances 0.000 claims abstract description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 8
- 210000002268 wool Anatomy 0.000 claims description 8
- 239000003513 alkali Substances 0.000 claims description 7
- 235000008216 herbs Nutrition 0.000 claims description 7
- 230000004044 response Effects 0.000 claims description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- 230000000996 additive effect Effects 0.000 claims description 6
- 238000006722 reduction reaction Methods 0.000 claims description 5
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000004062 sedimentation Methods 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 235000013339 cereals Nutrition 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 37
- 230000008569 process Effects 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 239000012670 alkaline solution Substances 0.000 abstract 2
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 1
- 239000002923 metal particle Substances 0.000 abstract 1
- 230000035484 reaction time Effects 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 18
- 229910052709 silver Inorganic materials 0.000 description 18
- 239000004332 silver Substances 0.000 description 18
- 238000004140 cleaning Methods 0.000 description 12
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 230000007797 corrosion Effects 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 8
- 239000008367 deionised water Substances 0.000 description 8
- 229910021641 deionized water Inorganic materials 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 239000002210 silicon-based material Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910001961 silver nitrate Inorganic materials 0.000 description 6
- 239000002105 nanoparticle Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000003518 caustics Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000001795 light effect Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000013528 metallic particle Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 241000628997 Flos Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000000025 interference lithography Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses an all-solution preparation method of nanoscale pyramid suede on the silicon surface. The method comprises the steps that 1, a silicon wafer is put into a mixed solution containing metal ions and hydrofluoric acid, so that a layer of metal nano-particles deposit on the surface of the silicon wafer, and a silicon wafer attached with the metal nano-particles is obtained; 2, the silicon wafer attached with the metal nano-particles is immersed into an alkaline solution containing additives, silicon nanoscale pyramid suede is formed at the certain temperature for certain reaction time, and a suede silicon wafer is obtained; and 3, the suede silicon wafer is soaked into an acid solution, and metal nano-particles attached to the surface are removed. According to the method, the metal particles are used for extracting electrons generated by reaction of silicon and the alkaline solution, so that the generation position of hydrogen bubbles is changed, the silicon surface is corroded evenly, and the dense nanoscale pyramid suede is generated. The process is simple, cost is low, the suede effect is perfect, and the method has important application to ultrathin crystalline silicon cells.
Description
Technical field
The present invention relates to solar cell field, more particularly to one kind prepares nanometer gold word by whole soln process in silicon face
The method of tower matte, and its application in ultra-thin crystal silicon solar battery.
Background technology
Due to being related to light in the photoelectric device in silicon solar cell, silicon photodetector, silicon diode etc. based on silicon materials
Electric transformation process, therefore the optical property to silicon face has special requirement.Such as in solar cell, in order that incident illumination is to the greatest extent
May be absorbed and be required that surface reflection loss is low manyly.For realizing this purpose, surface wool manufacturing (prepare in silicon face or
Orderly or random micro nano structure array) it is the effective method of one of which.Particularly when silicon materials thickness is less than light
During absorption length (ultra-thin crystal silicon), rational structure design makes incident illumination be trapped in silicon materials body to seem most important.For
For monocrystal silicon, people generally make (just or) pyramid suede structure on its surface.The wherein system of micron pyramid matte
Standby scheme is highly developed, process is simple and with low cost, but can lose thickness during making herbs into wool and reach several microns
Silicon materials, this is totally unfavorable for superfine crystal silicon battery.It is found that nano pyramid matte can not only realize it is good
Good optical property, and typically there are fewer silicon materials to lose, light absorbing zone is maintained as much as possible.Therefore it is simple
And the silicon nano pyramid matte preparation method of low cost seems most important to superfine crystal silicon battery.
At present major part needs to rely on mask process in preparing the method for nano pyramid matte, that is, need local windowing to cover
Film is defining corrosion area.Nano-photoetching stamping technique is exactly the most popular side for preparing nano pyramid matte of one of which
Method.This technology is generally required serves as etching mask layer in silicon face one layer of dielectric layer (such as silicon dioxide and silicon nitride) of deposition,
Then deposit embossed layer and metallic mold for nano-imprint defines corrosion pattern (nanometer scale), then by reactive ion etching and Fluohydric acid.
The method of corrosion removes the remaining embossed layer and dielectric layer of windowed regions, and finally again the silicon sample for defining corrosion pattern is soaked
Nano pyramid matte is prepared by anisotropic etch in entering aqueous slkali.Interference photoetching technology is also a kind of conventional definition
The method that mask pattern prepares fine structure.This technology is typically also to need to deposit one layer of dielectric layer and photoresist in silicon face
Layer, then defines mask pattern using the method for interference lithography, after getting rid of the dielectric layer and photoresist layer of windowed regions, then
Carry out caustic corrosion and prepare nano pyramid suede structure.Except the method that these prepare nano pyramid matte based on masking process
Outward, some also specially prepare the technology of mask layer.It has been proposed that passing through focused ion beam or electron beam selectivity irradiation
Silicon face, then using the silicon of irradiation zone is more difficult and N2H4H2The principle of O solution reactions is preparing silicon nano pyramid floss
Face.
It can be seen that in the above-mentioned scheme for preparing nano pyramid matte, or preparation process is complicated, or costliness need to be used
Equipment.Although attempting in recent years propose that metal Assisted Chemical Etching Process prepares the method that porous silicon surface carries out caustic corrosion again
Nano pyramid matte is prepared, or but pyramid surface that at present prepared by this method is extremely coarse, so as to than larger
Surface carrier recombination losses, or with than larger silicon loss amount in corrosion process therefore and improper for surpassing
Thin crystal silicon battery.
The content of the invention
In view of the deficiencies in the prior art, the technical problem to be solved is to provide a kind of suitable for ultra-thin crystal silicon
The silicon face nano pyramid matte technology of preparing of battery.
For achieving the above object, the invention provides a kind of employing whole soln process prepares the side of silicon nano pyramid matte
Method, its process is simple, with low cost and pile effects are perfect.Specifically, the technical scheme that the present invention is provided is as follows：
A kind of whole soln preparation method of silicon face nano pyramid matte, comprises the following steps：
The first step, silicon chip is placed in the mixed solution of metal ion and Fluohydric acid., makes one layer of silicon chip surface deposition golden
Metal nano-particle, obtains the silicon chip with metal nanoparticle；
Second step, the silicon chip with metal nanoparticle is immersed in the aqueous slkali containing additive, in certain temperature
It is lower to form silicon nano pyramid matte through certain response time, obtain the silicon chip of making herbs into wool；
3rd step, the silicon chip of making herbs into wool is soaked in acid solution, removes the metal nanoparticle of surface attachment.
Preferably, described in the first step, in mixed solution, concentration of metal ions is 0.0001-0.01mol/L, and Fluohydric acid. is dense
Spend for 5-15vol%, sedimentation time is 3-60s.
Preferably, the metal ion in the first step is the metal ion that reduction reaction can occur with silicon.
Preferably, the aqueous slkali in second step is inorganic alkali solution, including sodium hydroxide, potassium hydroxide.
Preferably, the aqueous slkali in second step is organic alkali solution, including Tetramethylammonium hydroxide.
Preferably, the concentration of the aqueous slkali in second step is 0.8-5%, and the concentration of the additive is 1-15%,
Certain temperature is 50-80 DEG C, and certain response time is 5-60min.
Preferably, the additive in second step includes isopropanol.
Preferably, the acid solution in the 3rd step is that the metal nanoparticle of deposition can be made to be oxidized to metal ion is molten
Acid in solution.
Preferably, the volumetric concentration percentage ratio of the acid solution in the 3rd step is 10-50%, and soak time is 2-
20min。
Preferably, the silicon chip includes monocrystalline silicon piece.
A kind of ultra-thin crystal silicon solar battery, whole soln of the silicon chip surface making herbs into wool using above-mentioned silicon face nano pyramid matte
Preparation method.
One important applied field of silicon nano pyramid matte prepared by the method that the present invention is provided is silicon solar cell,
Particularly ultra-thin silicon solar cell.Because when silicon chip than it is relatively thin when, it is contemplated that silicon materials are lost problem, and micron pyramid is not suitable for
It is used as surface suede structure.And nano pyramid matte prepared by methods described is few to silicon materials loss, and work as which
Extremely superior sunken light effect can be realized in surface after further covering the silicon nitride layer of suitable thickness, or even be close to preferable sunken light
The Lambertian limit.Therefore ensure that ultra thin silicon wafers solar cell photoelectric current will not because of the thinning and impaired of silicon materials,
So as to realize the purpose of low-cost high-efficiency solar cell.Furthermore, it is necessary to explanation be that while apply gold before caustic corrosion step
Metal nano-particle, but its effect is completely different with the metal assistant chemical catalysis etching of general report.In general silicon
In nanostructured preparation scheme, it is the principle that make use of metallic particles be catalyzed etching in acid solution with local, and at this specially
In the method that profit is proposed, metallic particles is mainly used for extracting the electronics that silicon is produced with aqueous slkali reaction, so as to change bubble hydrogen
Produce position so that silicon face uniformly can be corroded, so as to produce the nano pyramid matte of densification.
The technique effect of the method for the present invention and generation is described further below with reference to accompanying drawing, to be fully understood from
The purpose of the present invention, feature and effect.
Description of the drawings
Fig. 1 is the Silver nano-particle layer schematic diagram of 1 surface of embodiment of the present invention deposition
Fig. 2 is nano pyramid matte scanning electron microscope (SEM) photograph prepared by the embodiment of the present invention 1
Fig. 3 is nano pyramid matte scanning electron microscope (SEM) photograph prepared by the embodiment of the present invention 2
Fig. 4 is nano pyramid matte scanning electron microscope (SEM) photograph prepared by the embodiment of the present invention 3
Fig. 5 is optical absorption curve chart when nano pyramid matte is applied to ultra thin silicon wafers
Specific embodiment
Embodiment 1：
The first step, the deposition of metal nanoparticle, herein from silver nano-grain.By the monocrystal silicon for cleaning up in room temperature
Under be immersed in 10s in the mixed solution of silver nitrate and Fluohydric acid., wherein silver nitrate concentration 0.0078mol/L, Fluohydric acid.
9.6vol%.By reduction reaction, you can in silicon face uniform deposition last layer Silver nano-particle layer, such as Fig. 1.Deposition silver nanoparticle
After granule, deionized water cleaning silicon chip is removing remaining acid solution.
Second step, above-mentioned surface is deposited the alkali soluble being made up of the silicon chip immersion sodium hydroxide and isopropanol of silver nano-grain
In liquid, wherein naoh concentration 1.1%, isopropanol 8vol%.Solution temperature control at 55 DEG C, response time 25min.Then
Take out silicon chip, and deionized water cleaning.
3rd step, above-mentioned silicon chip is immersed 10min in the salpeter solution of 30vol%, the silver nano-grain of silicon face is removed.
Then deionized water cleaning silicon chip.So far, the clean silicon nano pyramid matte in surface, such as Fig. 2 is obtained.The present embodiment institute
In 100-1100nm, average-size is 443nm to the nano pyramid distribution of sizes of preparation, standard deviation 206nm.
Embodiment 2：
The first step, the deposition of metal nanoparticle, herein from silver nano-grain.By the monocrystal silicon for cleaning up in room temperature
Under be immersed in 10s in the mixed solution of silver nitrate and Fluohydric acid., wherein silver nitrate concentration 0.0078mol/L, Fluohydric acid.
9.6vol%.By reduction reaction, you can in silicon face uniform deposition last layer Silver nano-particle layer.Deposition silver nano-grain
Afterwards, deionized water cleaning silicon chip is removing remaining acid solution.
Second step, above-mentioned surface is deposited the alkali soluble being made up of the silicon chip immersion sodium hydroxide and isopropanol of silver nano-grain
In liquid, wherein naoh concentration 1.1%, isopropanol 8vol%.Solution temperature control at 65 DEG C, response time 25min.Then
Take out silicon chip, and deionized water cleaning.
3rd step, above-mentioned silicon chip is immersed 10min in the salpeter solution of 30vol%, the silver nano-grain of silicon face is removed.
Then deionized water cleaning silicon chip.So far, the clean silicon nano pyramid matte in surface, such as Fig. 3 is obtained.The present embodiment institute
In 100-1200nm, average-size is 467nm to the nano pyramid distribution of sizes of preparation, standard deviation 210nm.
Embodiment 3：
The first step, the deposition of metal nanoparticle, herein from silver nano-grain.By under the monocrystal silicon room temperature for cleaning up
It is immersed in 10s in the mixed solution of silver nitrate and Fluohydric acid., wherein silver nitrate concentration 0.0078mol/L, Fluohydric acid. 9.6vol%.
By reduction reaction, you can in silicon face uniform deposition last layer Silver nano-particle layer.After deposition silver nano-grain, deionization is used
Water cleaning silicon chip is removing remaining acid solution.
Second step, above-mentioned surface is deposited the alkali soluble being made up of the silicon chip immersion sodium hydroxide and isopropanol of silver nano-grain
In liquid, wherein naoh concentration 1.1%, isopropanol 8vol%.Solution temperature control at 75 DEG C, response time 25min.Then
Take out silicon chip, and deionized water cleaning.
3rd step, above-mentioned silicon chip is immersed 10min in the salpeter solution of 30vol%, the silver nano-grain of silicon face is removed.
Then deionized water cleaning silicon chip.So far, the clean silicon nano pyramid matte in surface, such as Fig. 4 is obtained.This embodiment institute
The nano pyramid average-size of preparation is 579nm, and standard deviation 329nm shows that pyramid size is mainly distributed on 250-
900nm。
The method for preparing nano pyramid matte proposed by the present invention be can be seen that from three embodiments above very simple
It is single, it is whole soln process, without the need for complicated masking process, without expensive device.Prepared nano pyramid matte is uniform,
And suede structure is low to the dependency of solution temperature, that is, there is wide process window.This side is illustrated below by an embodiment
The optical effect of nano pyramid matte prepared by method.
Embodiment 4：
In the monocrystalline substrate of ultra-thin (30 μm), nanometer is prepared in silicon face by whole soln method proposed by the present invention
Pyramid matte (such as embodiment 2), then covers the silicon nitride layer of one layer of 80nm or so in front, and the back side covers 100nm or so
Silicon nitride film, the silver layer of redeposited 200nm is used as back reflection layer.As reference, nano pyramid is not carried out to surface
The silicon substrate of matte texture is also carried out the silicon nitride layer that same technique, i.e. front cover one layer of 80nm or so, and the back side covers
The silicon nitride layer of 100nm or so, the silver layer of redeposited 200nm.From figure 5 it can be seen that carrying out the silicon lining of nano pyramid surface texture
Bottom season absorbance is significantly larger than the light absorbs of flat silicon substrate, or even is close to the perfect optics absorption Lambertian limit, shows
The nano pyramid matte for going out the present invention program preparation has good sunken light effect.
The preferred embodiment of the present invention described in detail above.It should be appreciated that the ordinary skill of this area is without the need for wound
The property made work just can make many modifications and variations with design of the invention.Therefore, all technical staff in the art
Pass through the available technology of logical analysis, reasoning, or a limited experiment under this invention's idea on the basis of existing technology
Scheme, all should be in the protection domain being defined in the patent claims.
Claims (10)
1. a kind of whole soln preparation method of silicon face nano pyramid matte, it is characterised in that comprise the following steps：
The first step, silicon chip is placed in the mixed solution of metal ion and Fluohydric acid., makes silicon chip surface deposition layer of metal receive
Rice grain, obtains the silicon chip with metal nanoparticle；
Second step, the silicon chip with metal nanoparticle is immersed in the aqueous slkali containing additive, at a certain temperature Jing
Certain response time formation silicon nano pyramid matte is crossed, the silicon chip of making herbs into wool is obtained；
3rd step, the silicon chip of making herbs into wool is soaked in acid solution, removes the metal nanoparticle of surface attachment.
2. the whole soln preparation method of silicon face nano pyramid matte as claimed in claim 1, wherein, described in the first step
In mixed solution, concentration of metal ions is 0.0001-0.01mol/L, and hydrofluoric acid concentration is 5-15vol%, and sedimentation time is 3-
60s。
3. the whole soln preparation method of silicon face nano pyramid matte as claimed in claim 1, wherein, the institute in the first step
It is the metal ion that reduction reaction can occur with silicon to state metal ion.
4. the whole soln preparation method of silicon face nano pyramid matte as claimed in claim 1, wherein, the institute in second step
It is inorganic alkali solution to state aqueous slkali, including sodium hydroxide, potassium hydroxide.
5. the whole soln preparation method of silicon face nano pyramid matte as claimed in claim 1, wherein, the institute in second step
It is organic alkali solution to state aqueous slkali, including Tetramethylammonium hydroxide.
6. the whole soln preparation method of silicon face nano pyramid matte as claimed in claim 1, wherein, the institute in second step
The concentration for stating aqueous slkali is 0.8-5%, and the concentration of the additive is 1-15%, and certain temperature is 50-80 DEG C, described
Certain response time is 5-60min.
7. the whole soln preparation method of silicon face nano pyramid matte as claimed in claim 1, wherein, described in second step
Additive includes isopropanol.
8. the whole soln preparation method of silicon face nano pyramid matte as claimed in claim 1, wherein, the institute in the 3rd step
It is that the metal nanoparticle of deposition can be made to be oxidized to metal ion to be dissolved in the acid in solution to state acid solution.
9. the whole soln preparation method of silicon face nano pyramid matte as claimed in claim 1, wherein, the institute in the 3rd step
The volumetric concentration percentage ratio for stating acid solution is 10-50%, and soak time is 2-20min.
10. a kind of ultra-thin crystal silicon solar battery, it is characterised in that silicon chip surface making herbs into wool is using such as claim 1-9 any one
The whole soln preparation method of described silicon face nano pyramid matte.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107217307A (en) * | 2017-06-28 | 2017-09-29 | 常州市瑞泰物资有限公司 | A kind of preparation method of monocrystalline silicon piece texture |
| CN108878549A (en) * | 2018-06-27 | 2018-11-23 | 上海交通大学 | A kind of method for realizing quasi- omnidirectional's silicon solar cell and quasi- omnidirectional's analysis method |
| CN110707163A (en) * | 2019-09-20 | 2020-01-17 | 浙江师范大学 | Method for texturing on surface of single crystal silicon by using tetramethylguanidine organic alkali |
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| CN107217307A (en) * | 2017-06-28 | 2017-09-29 | 常州市瑞泰物资有限公司 | A kind of preparation method of monocrystalline silicon piece texture |
| CN107217307B (en) * | 2017-06-28 | 2019-11-08 | 南理工泰兴智能制造研究院有限公司 | A kind of preparation method of monocrystalline silicon piece texture |
| CN108878549A (en) * | 2018-06-27 | 2018-11-23 | 上海交通大学 | A kind of method for realizing quasi- omnidirectional's silicon solar cell and quasi- omnidirectional's analysis method |
| CN110707163A (en) * | 2019-09-20 | 2020-01-17 | 浙江师范大学 | Method for texturing on surface of single crystal silicon by using tetramethylguanidine organic alkali |
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