CN103696021A - Polycrystalline velvet additive-matched surface treatment technology after felting - Google Patents
Polycrystalline velvet additive-matched surface treatment technology after felting Download PDFInfo
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- CN103696021A CN103696021A CN201310717798.7A CN201310717798A CN103696021A CN 103696021 A CN103696021 A CN 103696021A CN 201310717798 A CN201310717798 A CN 201310717798A CN 103696021 A CN103696021 A CN 103696021A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a polycrystalline velvet additive-matched surface treatment technology after felting. The technology comprises the following steps: (a) putting a silicon slice into a system to which a novel polycrystalline velvet additive is added to felt, so as to form a small suede with a better anti-reflection effect; (b) heating a KOH solution to an alkaline bath by using a heat exchanger with large powder, and then spraying the felted silicon slice up and down by using a hot alkaline liquor; (c) cleaning the surface of the silicon slice by using specific concentration of HF/HCL mixed acid. By adopting the technology disclosed by the invention, excessive nanoscale porous silicon can be removed, recombination is effectively reduced, open pressure and parallel resistance are improved, leakage current is reduced, and an aluminum back field also can be effectively prevented from loosening and falling off after a silk screen is printed and sintered. The capillarity on the suede is relieved due to higher concentration of hot alkaline washing, a pile pit is better in homogeneity, the probability of over-etching and P aberration of a pipe is finally reduced, and impurities in the pile pit of the small suede are removed by higher concentration of mixed acid washing. Thus, recombination is greatly reduced.
Description
Technical field:
The present invention relates to solar cell preparation field, relate in particular to making herbs into wool rear surface treatment process a kind of and polycrystalline making herbs into wool additive coupling.
Background technology:
Crystal silicon solar energy battery is more and more higher for the requirement of efficiency at present, polycrystalline making herbs into wool additive improves novel product short-circuit current and have certain gain after assembly processing procedure as a kind of reflectivity that can effectively reduce, because of the higher Bei Ge great gradually of its rate of return on investment producer even volume production on probation.But the supporting technique of traditional polycrystalline making herbs into wool additive exists, and porous silicon goes totally, etching is crossed the shortcomings such as quarter/pipe P aberration ratio is high, depths, suede hole impurity does not wash clean clearly, and these problems have finally caused the decline of efficiency and the quality of battery.
Industrial community by great many of experiments, after the surface treatment of a series of requirements at the higher level, has obtained technical breakthrough to this problem after utilizing the making herbs into wool of polycrystalline making herbs into wool additive.
Summary of the invention:
Technical problem to be solved by this invention is, provide a kind of unnecessary porous silicon that polycrystalline making herbs into wool additive can be produced to go totally, and by adjusting the temperature of alkali groove and the homogeneity of concentration, improve the making herbs into wool rear surface treatment process of a kind of of battery bad order and polycrystalline making herbs into wool additive coupling.
In order to solve the problems of the technologies described above, the present invention is achieved by the following technical solutions: a kind of making herbs into wool rear surface treatment process mating with polycrystalline making herbs into wool additive, comprises the following steps: the narrow and small matte of (a) silicon chip being put into nitration mixture (HF/HNO3=1:6.5) the system making herbs into wool formation anti-reflection better effects if that is added with a kind of New Polycrystalline making herbs into wool additive (main component is triammonium citrate, trolamine, tensio-active agent, surface cleaning agent and water); (b) with a kind of heat exchanger of relatively high power, to the KOH solution in alkali groove, heat, make it maintain certain temperature and concentration, then use the complete silicon chip of the upper and lower hydro-peening making herbs into wool of this heat alkali liquid; (c) with certain concentration HF/HCL nitration mixture cleaning silicon chip surface.
Preferably, in described step (b), chemical oxidation step adopts HNO
3as strong oxidizer, and water according to
Preferably, described making herbs into wool additive environment grow the matte reflectivity of matte compared with normal technique will low 3%-4%.
Preferably, the concentration of described KOH solution is 8%-10%, and temperature is 40 ± 2 ℃.
Preferably, the concentration of described HF/HCL is 8%-10%.
Compared with prior art, usefulness of the present invention is: making herbs into wool rear surface treatment process this and polycrystalline making herbs into wool additive coupling can be removed unnecessary nanometer porous silicon, effectively reduced compound, improved to open and pressed and shunting resistance, reduced leakage current, can also effectively prevent from after silk screen printing sintering that aluminium back surface field is loose to come off; Because the cause that greater concn thermokalite is washed, causes the capillarity of matte to be eased, and suede hole homogeneity is better, has finally reduced etching and has crossed the probability of carving and managing P aberration; The nitration mixture of greater concn cleans, and also makes the Impurity removal of depths, little matte suede hole clean, greatly reduces compound.
Embodiment:
Below by embodiment, describe the present invention.
Example one:
To be used in the silicon chip that under making herbs into wool additive environment, making herbs into wool completes, put into KOH solution and clean, alkali concn is 5%, 20 ℃ of temperature, complete afterwards nitration mixture and wash and spread the silk screen printing of etching plated film, test electrical property, RSH is 40 Ω, and efficiency is 17.1%, leaks electricity for 0.56A.Example two:
To be used in the silicon chip that under making herbs into wool additive environment, making herbs into wool completes, put into KOH solution and clean, alkali concn is 5%, 35 ℃ of temperature, complete afterwards nitration mixture and wash and spread the silk screen printing of etching plated film, test electrical property, RSH is 95 Ω, and efficiency is 17.15%, leaks electricity for 0.42A.Example three:
To be used in the silicon chip that under making herbs into wool additive environment, making herbs into wool completes, put into KOH solution and clean, alkali concn is 8%, 35 ℃ of temperature, complete afterwards nitration mixture and wash and spread the silk screen printing of etching plated film, test electrical property, RSH is 156 Ω, and efficiency is 17.2%, leaks electricity for 0.32A.Example four:
To be used in the silicon chip that under making herbs into wool additive environment, making herbs into wool completes, put into KOH solution and clean, alkali concn is 8%, 40 ℃ of temperature, complete afterwards nitration mixture and wash and spread the silk screen printing of etching plated film, test electrical property, RSH is 205 Ω, and efficiency is 17.25%, leaks electricity for 0.26A.
The making herbs into wool rear surface treatment process this and polycrystalline making herbs into wool additive mates, can remove unnecessary nanometer porous silicon, effectively reduce compoundly, improve to open and pressed and shunting resistance, reduced leakage current, can also effectively prevent from after silk screen printing sintering that aluminium back surface field is loose to come off; Because the cause that greater concn thermokalite is washed, cause the capillarity of matte to be eased, and matte homogeneity is better, has finally reduced etching and crossed the probability of carving and managing P aberration; The nitration mixture of greater concn cleans, and also makes the Impurity removal of depths, little matte suede hole clean, greatly reduces compound.
It is emphasized that: be only preferred embodiment of the present invention above, not the present invention is done to any pro forma restriction, any simple modification, equivalent variations and modification that every foundation technical spirit of the present invention is done above embodiment, all still belong in the scope of technical solution of the present invention.
Claims (7)
1. and a making herbs into wool rear surface treatment process for polycrystalline making herbs into wool additive coupling, it is characterized in that, comprise the following steps:
(a) silicon chip is put into the narrow and small matte of the mixed acid system making herbs into wool formation anti-reflection better effects if that is added with polycrystalline making herbs into wool additive;
(b) with a kind of heat exchanger of relatively high power, to KOH solution in alkali groove, heat, then use the complete silicon chip of the upper and lower hydro-peening making herbs into wool of this heat alkali liquid;
(c) with certain concentration HF/HCL nitration mixture cleaning silicon chip surface.
2. the making herbs into wool rear surface treatment process that according to claim 1 and polycrystalline making herbs into wool additive mates, is characterized in that, in described step (a), polycrystalline making herbs into wool additive is comprised of triammonium citrate, trolamine, tensio-active agent, surface cleaning agent and water.
3. technique as claimed in claim 1, is characterized in that: in step (a), mixed acid system is by HF and HNO
3form.
4. technique as claimed in claim 1, is characterized in that: HF and HNO in step (a)
3weight ratio be 1:6.5.
5. the making herbs into wool rear surface treatment process of as claimed in claim 1 and polycrystalline making herbs into wool additive coupling, is characterized in that, in described step (a), with making herbs into wool additive environment, grow the matte reflectivity of matte compared with normal technique will low 3%-4%.
6. the making herbs into wool rear surface treatment process that as claimed in claim 1 and polycrystalline making herbs into wool additive mates, is characterized in that, in described step (b), the concentration of KOH solution is 8%-10%, and temperature is 40 ± 2 ℃.
7. the making herbs into wool rear surface treatment process that as claimed in claim 1 and polycrystalline making herbs into wool additive mates, is characterized in that, in described step (c), the concentration of HF/HCL is 8%-10%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310717798.7A CN103696021A (en) | 2013-12-23 | 2013-12-23 | Polycrystalline velvet additive-matched surface treatment technology after felting |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310717798.7A CN103696021A (en) | 2013-12-23 | 2013-12-23 | Polycrystalline velvet additive-matched surface treatment technology after felting |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106319636A (en) * | 2016-09-23 | 2017-01-11 | 西安黄河光伏科技股份有限公司 | Preparation method for improving fabric surface of single crystalline silicon solar cell and preparation tool |
| CN107217307A (en) * | 2017-06-28 | 2017-09-29 | 常州市瑞泰物资有限公司 | A kind of preparation method of monocrystalline silicon piece texture |
| CN107245761A (en) * | 2017-08-10 | 2017-10-13 | 常州时创能源科技有限公司 | Diamond wire polycrystalline silicon texturing adjuvant and its application |
| CN108330545A (en) * | 2018-01-24 | 2018-07-27 | 浙江向日葵光能科技股份有限公司 | A kind of additive and method for Buddha's warrior attendant wire cutting polycrystalline silicon texturing |
| CN108767025A (en) * | 2017-06-23 | 2018-11-06 | 浙江光隆能源科技股份有限公司 | A kind of process for etching of diamond wire solar battery sheet |
| CN110165018A (en) * | 2019-04-18 | 2019-08-23 | 横店集团东磁股份有限公司 | A kind of polycrystalline cleaning process of decline electric leakage raising efficiency |
| CN111341884A (en) * | 2020-03-20 | 2020-06-26 | 浙江晶科能源有限公司 | Silicon chip and preparation method of inverted pyramid structure on surface of silicon chip |
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| JP2012079982A (en) * | 2010-10-04 | 2012-04-19 | Canon Inc | Solid-state imaging device and method of manufacturing the same |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106319636A (en) * | 2016-09-23 | 2017-01-11 | 西安黄河光伏科技股份有限公司 | Preparation method for improving fabric surface of single crystalline silicon solar cell and preparation tool |
| CN106319636B (en) * | 2016-09-23 | 2018-11-09 | 西安黄河光伏科技股份有限公司 | It is a kind of improve monocrystalline silicon solar battery suede preparation method and prepare tool |
| CN108767025A (en) * | 2017-06-23 | 2018-11-06 | 浙江光隆能源科技股份有限公司 | A kind of process for etching of diamond wire solar battery sheet |
| CN107217307A (en) * | 2017-06-28 | 2017-09-29 | 常州市瑞泰物资有限公司 | A kind of preparation method of monocrystalline silicon piece texture |
| CN107217307B (en) * | 2017-06-28 | 2019-11-08 | 南理工泰兴智能制造研究院有限公司 | A kind of preparation method of monocrystalline silicon piece texture |
| CN107245761A (en) * | 2017-08-10 | 2017-10-13 | 常州时创能源科技有限公司 | Diamond wire polycrystalline silicon texturing adjuvant and its application |
| CN108330545A (en) * | 2018-01-24 | 2018-07-27 | 浙江向日葵光能科技股份有限公司 | A kind of additive and method for Buddha's warrior attendant wire cutting polycrystalline silicon texturing |
| CN110165018A (en) * | 2019-04-18 | 2019-08-23 | 横店集团东磁股份有限公司 | A kind of polycrystalline cleaning process of decline electric leakage raising efficiency |
| CN111341884A (en) * | 2020-03-20 | 2020-06-26 | 浙江晶科能源有限公司 | Silicon chip and preparation method of inverted pyramid structure on surface of silicon chip |
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Application publication date: 20140402 |