CN110165018A - A kind of polycrystalline cleaning process of decline electric leakage raising efficiency - Google Patents
A kind of polycrystalline cleaning process of decline electric leakage raising efficiency Download PDFInfo
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- CN110165018A CN110165018A CN201910314126.9A CN201910314126A CN110165018A CN 110165018 A CN110165018 A CN 110165018A CN 201910314126 A CN201910314126 A CN 201910314126A CN 110165018 A CN110165018 A CN 110165018A
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- cleaning
- wool
- making herbs
- polycrystalline
- electric leakage
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- 238000004140 cleaning Methods 0.000 title claims abstract description 102
- 238000000034 method Methods 0.000 title claims abstract description 34
- 230000008569 process Effects 0.000 title claims abstract description 27
- 230000007423 decrease Effects 0.000 title claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 80
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 80
- 239000010703 silicon Substances 0.000 claims abstract description 80
- 235000008216 herbs Nutrition 0.000 claims abstract description 58
- 210000002268 wool Anatomy 0.000 claims abstract description 58
- 239000003513 alkali Substances 0.000 claims abstract description 29
- 238000005554 pickling Methods 0.000 claims abstract description 22
- 238000005406 washing Methods 0.000 claims abstract description 20
- 239000005416 organic matter Substances 0.000 claims abstract description 19
- 238000009792 diffusion process Methods 0.000 claims abstract description 13
- 238000001035 drying Methods 0.000 claims abstract description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 36
- 239000007921 spray Substances 0.000 claims description 28
- 239000002253 acid Substances 0.000 claims description 24
- 239000000654 additive Substances 0.000 claims description 24
- 230000000996 additive effect Effects 0.000 claims description 22
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 18
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 12
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 238000009941 weaving Methods 0.000 claims description 5
- 230000002000 scavenging effect Effects 0.000 claims description 2
- NGWKGSCSHDHHAJ-YPFQVHCOSA-N Liquoric acid Chemical compound C1C[C@H](O)C(C)(C)C2CC[C@@]3(C)[C@]4(C)C[C@H]5O[C@@H]([C@](C6)(C)C(O)=O)C[C@@]5(C)[C@@H]6C4=CC(=O)C3[C@]21C NGWKGSCSHDHHAJ-YPFQVHCOSA-N 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 8
- 239000000126 substance Substances 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 3
- 230000002950 deficient Effects 0.000 abstract description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 34
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 20
- 229920005591 polysilicon Polymers 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 229910021645 metal ion Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910021426 porous silicon Inorganic materials 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 239000012459 cleaning agent Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- -1 aqueous slkali Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention relates to crystal silicon solar energy battery technical fields, disclose a kind of polycrystalline cleaning process of decline electric leakage raising efficiency.Method includes the following steps: feeding；Making herbs into wool；Washing；Alkali cleaning；Washing；The cleaning of organic matter；Washing；Pickling；Washing；Drying；Diffusion furnace tube is sent into blanking.The present invention is after existing making herbs into wool completion, the chemical cheaning of corresponding matched proportion density is carried out to silicon wafer again, reach the cleaning again to the organic matter of silicon chip surface and remaining impurity, so as to promote the efficiency of cell piece and the Rsh of cell piece, general improved efficiency is 0.01 ~ 0.02% or so, Rsh can increase by 50 or more, and electric leakage defective products can decline 0.3 ~ 0.4% in final finished battery.
Description
Technical field
The present invention relates to crystal silicon solar energy battery technical field more particularly to a kind of polycrystalline of decline electric leakage raising efficiency
Cleaning process.
Background technique
The decline of crystal silicon solar energy battery technology iteration bring cost gradually becomes the major impetus for pushing industry development,
Over the past two years, polycrystalline diamond wire cutting brought being decreased obviously in polycrystalline cost, and every at 0.6 yuan or more.But it is based on polycrystalline
Making herbs into wool principle, the formation that the low damaging layer of diamond wire cutting bring is unfavorable for flannelette are unavoidably brought while cost declines
Loss of efficiency, therefore the auxiliary that polycrystalline diamond line making herbs into wool process requires additive at present is completed.The stream of polycrystalline making herbs into wool process
Cheng Shi: feeding → nitric acid+hydrofluoric acid+flocking additive mixed liquor forms making herbs into wool → washing → alkali cleaning → washing → hydrofluoric acid and salt
Acid-mixed acid cleaning → washing → drying → blanking → enter diffusing procedure.Because the main component of additive is organic matter, organic matter
Be difficult to be cleaned, stay in textured surfaces, in cell piece later process influence be exactly increase surface leakage ratio and
A degree of efficiency decline.
Chinese invention patent application number is the patent of CN201710355691.0, discloses a kind of reduction polycrystalline cell piece leakage
Hydrogen peroxide, hydrofluoric acid, He Shui is added in the process of electricity, the method for using slot type to clean in the first groove body of cleaning machine
Mixture, fall the organic dirty of silicon chip surface with hydrogen peroxide oxidation, metal ion by being oxidized to high-valence state at a low price, while
Silicon chip surface forms layer of silicon dioxide thin layer, is washed off with hydrofluoric acid and takes away part organic contamination and metal ion.The patent solution
It has determined organic dirty residual of slot type polycrystalline making herbs into wool, but has failed to promote in chain type polycrystalline production line, in addition polycrystalline acid making herbs into wool has been produced
Raw porous silicon composite structure does not play good removal effect yet.
Summary of the invention
Bring organic substance residues that subsequent electric leakage is caused to increase to solve polycrystalline flocking additive, efficiency has certain influence
The shortcomings that, the present invention provides the cleanings that solar battery Rsh is relatively low, Irev is big caused by a kind of improvement polycrystalline additive making herbs into wool
Technique, the technology utilization hydrogen peroxide decompose the additive component for being attached to silicon chip surface after making herbs into wool, and with the buck of low concentration
That goes that deacidification making herbs into wool generates is unfavorable for PN junction porous silicon and secondary modification flannelette protrusion easy to wear, then through subsequent hydrochloric acid and
Hydrofluoric acid clean metal ion and silica achieve the purpose that clean flannelette, protection PN junction, to promote polycrystalline battery Rsh
Purpose.
The specific technical proposal of the invention is: a kind of polycrystalline cleaning process of decline electric leakage raising efficiency, including following step
It is rapid: (1) that p-type original silicon chip feeding: being imported into wool-weaving machine；
(2) making herbs into wool making herbs into wool: is carried out to p-type original silicon chip with making herbs into wool mixed liquor；
(3) it washes: the residual acid of the silicon chip surface after step (2) making herbs into wool is subjected to spray cleaning；
(4) silicon wafer after step (3) are washed alkali cleaning: is subjected to alkali cleaning with KOH solution；The effect of this step is mainly that making herbs into wool is complete
The porous silicon formed at silicon chip surface is eliminated later.
(5) it washes: the residual alkali of the silicon chip surface after step (4) alkali cleaning is subjected to spray cleaning；
(6) cleaning of organic matter: the silicon wafer after step (5) washing is cleaned with cleaning solution；The effect of this step is main
It is further to be cleaned to the remaining organic matter of silicon chip surface by the mixed liquor of hydrogen peroxide and alkali and flannelette is repaired again
Decorations.
(7) it washes: the residue of the silicon chip surface after step (6) cleaning is subjected to spray cleaning；
(8) silicon wafer after step (7) are cleaned pickling: is subjected to pickling with mix acid liquor；The effect of this step mainly passes through
The cleaning of nitration mixture cleans the oxide and metal ion of silicon chip surface, improves the cleanliness of silicon wafer, promotes finished product with this
The open-circuit voltage and transfer efficiency of battery.
(9) it washes: the residual acid of the silicon chip surface after step (8) pickling is subjected to spray cleaning；
(10) it dries: the silicon wafer after step (9) washing is dried with compressed air；
(11) diffusion furnace tube is sent into blanking: the silicon wafer after step (10) drying being sent into diffusion furnace tube in 30min and is expanded
It dissipates.The chief of this step is the time of blanking to diffusion furnace tube, and the residence time is longer in air for silicon wafer, meets with secondary
The probability of pollution and oxidation can increase, and be unfavorable for the cleaning of silicon wafer.
The purpose of the present invention is to provide a kind of polycrystalline cleaning process of decline electric leakage raising efficiency, which is used existing
The chemical cheaning of corresponding matched proportion density is completed and then is carried out to silicon wafer in some making herbs into wool, reaches the organic matter to silicon chip surface
The efficiency of battery is promoted to decline the surface leakage of battery with the cleaning again of remaining impurity.It is general in currently available technology
The transfer efficiency of logical polysilicon chip is lower, and after the surface of polysilicon chip is oxidized or pollutes, transfer efficiency can be declined, and influences
The performance of solar energy polycrystal cell piece.When the present inventor is by adjusting reagent concentration and cleaning in polysilicon chip cleaning process
Between, the Rsh of polysilicon chip is improved while removing the impurity and oxide layer on polysilicon chip surface.
The present invention by cleaned with water, aqueous slkali, organic matter and mixed acid solution clean polysilicon chip, treatment temperature temperature
With polysilicon chip surface is cleaner, is conducive to the progress of subsequent treatment process.The present invention complete in existing making herbs into wool and then
The chemical cheaning that corresponding matched proportion density is carried out to silicon wafer reaches to the clear again of the organic matter of silicon chip surface and remaining impurity
Clean, so as to promote the efficiency of cell piece and the Rsh of cell piece, general improved efficiency can in 0.01~0.02% or so, Rsh
To increase by 50 or more, electric leakage defective products can decline 0.3~0.4% in final finished battery.
Cleaning process of the invention, it is not very big for seeming with the difference of similar product making herbs into wool in the prior art cleaning, but
It is in solar energy polycrystalline silicon sheet cleaning field, common cleaning agent is just so several, has been difficult in the selection of cleaning agent at present
There is breakthrough, and the difference of the performance after polysilicon chip cleaning mostlys come from the adjustment of different detergent concentrations and proportion.For
For a certain performance after polysilicon chip cleaning, preferable property can be obtained perhaps by the test of simple limited times
Can, but the comprehensive performance of the solar energy polycrystalline silicon sheet after cleaning to be made integrally to get a promotion, but there is no imagination ground is so simple
It is single.For example, in the process of cleaning, perhaps the concentration or dosage for increasing a certain cleaning agent can greatly promote polycrystalline battery
Rsh, but but will affect surface reflectivity, electric leakage and the short circuit current of polysilicon chip simultaneously, and at present for, people can not also
A set of more apparent rule is summed up from a large number of experiments of this complexity.This is also can be by polycrystalline there is presently no one
Impurities on surface of silicon chip is cleared and can reduce electric leakage, improve the reason of transformation efficiency of polysilicon chip.
Preferably, the concentration of nitric acid is the concentration of 9~14wt%, hydrofluoric acid in the making herbs into wool mixed liquor in step (2)
Concentration for 28~38wt%, flocking additive is 0.3~2wt%.
Preferably, the flocking additive is three peak polycrystalline flocking additives.Flocking additive used in the present invention is
The flocking additive of the prior art is purchased from Huzhou Sanfeng Energy Technology Co., Ltd., and it is existing that those skilled in the art can also fit purchase
Other flocking additives in technology.Flocking additive can speed up reaction solution in the reaction rate of silicon chip surface, and throw
More flannelettes can be obtained at light
Preferably, belt speed control is controlled in 1.6~2.3m/min, making herbs into wool temperature at 7~9 DEG C when the making herbs into wool.
Preferably, the concentration of the KOH solution is 1~7wt% in step (4)；The alkali cleaning time is 10~60s.
Potassium hydroxide solution can wash away the greasy dirt on polysilicon chip surface, and be modified again the flannelette of polysilicon chip.Potassium hydroxide
The changing value that excessive concentration will lead to the surface reflectivity of the polysilicon chip after cleaning is excessive, reduces the short circuit electricity of polysilicon chip
Stream.
Preferably, in step (6), hydrogen peroxide concentration is 4~7wt% in the cleaning solution, KOH concentration is 1~
7wt%；Cleaning time slot temperature is 40~70 DEG C, 20~70s of scavenging period.
The present invention decomposes the additive component for being attached to silicon chip surface after making herbs into wool using hydrogen peroxide, and with the alkali of low concentration
What water went that deacidification making herbs into wool generates be unfavorable for PN junction porous silicon and secondary modification flannelette protrusion easy to wear, then through subsequent hydrochloric acid
With hydrofluoric acid clean metal ion and silica, achieve the purpose that clean flannelette, protection PN junction, to promote polycrystalline battery
The purpose of Rsh.
Preferably, in step (8), concentration of hydrochloric acid is 10~30wt% in the mix acid liquor, hydrofluoric acid concentration is 8~
25wt%；The pickling is in 25~30 DEG C of 30~90s of cleaning.
Pickling can remove the metal impurities and silicon oxide layer on polysilicon chip surface.The present invention uses hydrochloric acid solution and hydrofluoric acid
The mixed acid solution of solution cleans polysilicon chip, and hydrochloric acid solution can effectively remove the metal impurities on polysilicon chip surface, hydrofluoric acid
Solution can remove the silica of more silicon chip surfaces.
Preferably, the spray cleaning temperature is 15~30 DEG C in step (3), the time is 4~8s；In step (5),
The spray cleaning temperature is 15~30 DEG C, and the time is 4~8s；In step (7), the spray cleaning temperature is 15~30 DEG C,
Time is 4~8s；In step (9), the spray cleaning temperature is 15~30 DEG C, and the time is 4~8s.
It is compared with the prior art, the beneficial effects of the present invention are: the present invention uses the mixed liquor of hydrogen peroxide and potassium hydroxide
The organic matter of silicon chip surface is cleaned again, and is sent into diffusion furnace tube in 30min after making herbs into wool is completed, avoids organic matter
The electric leakage of the secondary pollution bring battery surface of residual and air and loss in efficiency.
Detailed description of the invention
Fig. 1 is a kind of flow chart of the polycrystalline cleaning process of decline electric leakage raising efficiency of the invention.
Specific embodiment
The present invention will be further described with reference to the examples below.Related device, connection structure in the present invention
And method, if being device well known in the art, connection structure and method without refering in particular to.
Embodiment 1
A kind of polycrystalline cleaning process of decline electric leakage raising efficiency, comprising the following steps:
(1) p-type original silicon chip feeding: is imported into wool-weaving machine；
(2) making herbs into wool making herbs into wool: is carried out to p-type original silicon chip with making herbs into wool mixed liquor；The concentration of nitric acid is in the making herbs into wool mixed liquor
12wt%, hydrofluoric acid concentration be 33wt%, the concentration of flocking additive is 1wt%；Flocking additive is three peak polycrystalline making herbs into wool
Additive；Belt speed control is controlled in 2m/min, making herbs into wool temperature at 8 DEG C when the making herbs into wool；
(3) it washes: 6s will be cleaned in 25 DEG C of sprays through the residual acid of the silicon chip surface after step (2) making herbs into wool；
(4) alkali cleaning: the KOH solution alkali cleaning 20s for being 2wt% with concentration by the silicon wafer after step (3) washing；
(5) it washes: 6s will be cleaned in 25 DEG C of sprays through the residual alkali of the silicon chip surface after step (4) alkali cleaning；
(6) cleaning of organic matter: by the silicon wafer cleaning solution after step (5) are washed in 55 DEG C of cleaning 30s；Dioxygen in cleaning solution
Water concentration is 5wt%, and KOH concentration is 3wt%；
(7) it washes: 6s will be cleaned in 25 DEG C of sprays by the residue of silicon chip surface after step (6) are cleaned；
(8) pickling: by the silicon wafer mix acid liquor after step (7) are cleaned in 25 DEG C of pickling 70s；Concentration of hydrochloric acid in mix acid liquor
For 15wt%, hydrofluoric acid concentration 9wt%；
(9) it washes: 6s will be cleaned in 25 DEG C of sprays through the residual acid of the silicon chip surface after step (8) pickling；
(10) it dries: pneumatics being compressed with compressor, the silicon wafer after step (9) washing is dried with air knife；
(11) diffusion furnace tube is sent into blanking: the silicon wafer after step (10) drying being sent into diffusion furnace tube in 30min and is expanded
It dissipates.
Embodiment 2
A kind of polycrystalline cleaning process of decline electric leakage raising efficiency, comprising the following steps:
(1) p-type original silicon chip feeding: is imported into wool-weaving machine；
(2) making herbs into wool making herbs into wool: is carried out to p-type original silicon chip with making herbs into wool mixed liquor；The concentration of nitric acid is in the making herbs into wool mixed liquor
14wt%, hydrofluoric acid concentration be 28wt%, the concentration of flocking additive is 2wt%；Flocking additive is three peak polycrystalline making herbs into wool
Additive；Belt speed control is controlled in 2.3m/min, making herbs into wool temperature at 9 DEG C when the making herbs into wool；
(3) it washes: 4s will be cleaned in 30 DEG C of sprays through the residual acid of the silicon chip surface after step (2) making herbs into wool；
(4) alkali cleaning: the KOH solution alkali cleaning 15s for being 3wt% with concentration by the silicon wafer after step (3) washing；
(5) it washes: 4s will be cleaned in 30 DEG C of sprays through the residual alkali of the silicon chip surface after step (4) alkali cleaning；
(6) cleaning of organic matter: by the silicon wafer cleaning solution after step (5) are washed in 60 DEG C of cleaning 50s；Dioxygen in cleaning solution
Water concentration is 6wt%, and KOH concentration is 3wt%；
(7) it washes: 4s will be cleaned in 30 DEG C of sprays by the residue of silicon chip surface after step (6) are cleaned；
(8) pickling: by the silicon wafer mix acid liquor after step (7) are cleaned in 25~30 DEG C of 30~90s of pickling；In mix acid liquor
Concentration of hydrochloric acid is 20wt%, hydrofluoric acid concentration 20wt%；
(9) it washes: 4s will be cleaned in 30 DEG C of sprays through the residual acid of the silicon chip surface after step (8) pickling；
(10) it dries: pneumatics being compressed with compressor, the silicon wafer after step (9) washing is dried with air knife；
(11) diffusion furnace tube is sent into blanking: the silicon wafer after step (10) drying being sent into diffusion furnace tube in 20min and is expanded
It dissipates.
Embodiment 3
A kind of polycrystalline cleaning process of decline electric leakage raising efficiency, comprising the following steps:
(1) p-type original silicon chip feeding: is imported into wool-weaving machine；
(2) making herbs into wool making herbs into wool: is carried out to p-type original silicon chip with making herbs into wool mixed liquor；The concentration of nitric acid is in the making herbs into wool mixed liquor
9wt%, hydrofluoric acid concentration be 38wt%, the concentration of flocking additive is 1.5wt%；Flocking additive is three peak polycrystalline making herbs into wool
Additive；Belt speed control is controlled in 1.6m/min, making herbs into wool temperature at 7 DEG C when the making herbs into wool；
(3) it washes: 7s will be cleaned in 20 DEG C of sprays through the residual acid of the silicon chip surface after step (2) making herbs into wool；
(4) alkali cleaning: the KOH solution alkali cleaning 60s for being 1wt% with concentration by the silicon wafer after step (3) washing；
(5) it washes: 7s will be cleaned in 20 DEG C of sprays through the residual alkali of the silicon chip surface after step (4) alkali cleaning；
(6) cleaning of organic matter: by the silicon wafer cleaning solution after step (5) are washed in 70 DEG C of cleaning 20s；Dioxygen in cleaning solution
Water concentration is 7wt%, and KOH concentration is 1wt%；
(7) it washes: 7s will be cleaned in 20 DEG C of sprays by the residue of silicon chip surface after step (6) are cleaned；
(8) pickling: by the silicon wafer mix acid liquor after step (7) are cleaned in 30 DEG C of pickling 30s；Concentration of hydrochloric acid in mix acid liquor
For 30wt%, hydrofluoric acid concentration 8wt%；
(9) it washes: 7s will be cleaned in 20 DEG C of sprays through the residual acid of the silicon chip surface after step (8) pickling；
(10) it dries: pneumatics being compressed with compressor, the silicon wafer after step (9) washing is dried with air knife；
(11) diffusion furnace tube is sent into blanking: the silicon wafer after step (10) drying being sent into diffusion furnace tube in 25min and is expanded
It dissipates.
Comparative example 1
Comparative example 1 difference from example 1 is that: comparative example 1 without organic matter cleaning the step for, in alkali cleaning, water
Pickling is directly carried out after washing.Other are same as Example 1.
Comparative example 2
Comparative example 2 and embodiment 2 the difference is that: comparative example 2 without organic matter cleaning the step for, in alkali cleaning, water
Pickling is directly carried out after washing.Other are same as Example 2.
Comparative example 3
Comparative example 3 and embodiment 3 the difference is that: comparative example 3 without organic matter cleaning the step for, in alkali cleaning, water
Pickling is directly carried out after washing.Other are same as Example 3.
Performance evaluation
Examples 1 to 3 and comparative example 1~3 except cleaning process Bu Tong in addition to, other cell piece process conditions processed all ensure that the same.Under
Table 1 gives the electrical parameter that Examples 1 to 3 and comparative example 1~3 measure.
Table 1
| Uoc | Isc | Rs | Rsh | FF | Ncell | Quantity | Electric leakage counts | Electric leakage ratio | |
| Comparative example 1 | 0.6400 | 9.007 | 0.0018 | 153.4 | 80.21 | 0.1882 | 958 | 10 | 1.04% |
| Embodiment 1 | 0.6398 | 9.026 | 0.0018 | 272.6 | 80.17 | 0.1884 | 957 | 6 | 0.63% |
| Comparative example 2 | 0.6399 | 9.012 | 0.0019 | 194.2 | 80.11 | 0.1880 | 960 | 9 | 0.94% |
| Embodiment 2 | 0.6399 | 9.012 | 0.0018 | 245.5 | 80.15 | 0.1881 | 959 | 6 | 0.63% |
| Comparative example 3 | 0.6400 | 9.005 | 0.0018 | 174.6 | 80.13 | 0.1879 | 956 | 9 | 0.94% |
| Embodiment 3 | 0.6398 | 9.006 | 0.0018 | 262.5 | 80.22 | 0.1881 | 957 | 5 | 0.52% |
As can be seen from Table 1, the present invention completes and then carries out to silicon wafer the chemicals of corresponding matched proportion density in existing making herbs into wool
Cleaning, reach the cleaning again to the organic matter of silicon chip surface and remaining impurity, so as to promoted cell piece efficiency and
The Rsh of cell piece, general improved efficiency can increase by 50 or more in 0.01~0.02% or so, RSH, in final finished battery
Electric leakage defective products can decline 0.3~0.4%.
The above is only the preferred embodiment of invention, is not intended to limit the invention in any way, all skills according to the present invention
Art any simple modification, change and equivalent structure transformation substantially to the above embodiments, still fall within the technology of the present invention
The protection scope of scheme.
Claims (7)
1. a kind of polycrystalline cleaning process of decline electric leakage raising efficiency, it is characterised in that the following steps are included:
(1) p-type original silicon chip feeding: is imported into wool-weaving machine；
(2) making herbs into wool making herbs into wool: is carried out to p-type original silicon chip with making herbs into wool mixed liquor；
(3) it washes: the residual acid through step (2) making herbs into wool treated silicon chip surface is subjected to spray cleaning；
(4) silicon wafer after step (3) are washed alkali cleaning: is subjected to alkali cleaning with KOH solution；
(5) it washes: the residual alkali of the silicon chip surface after step (4) alkali cleaning is subjected to spray cleaning；
(6) cleaning of organic matter: the silicon wafer after step (5) washing is cleaned with cleaning solution；
(7) it washes: the residue of the silicon chip surface after step (6) cleaning is subjected to spray cleaning；
(8) silicon wafer after step (7) are cleaned pickling: is subjected to pickling with mix acid liquor；
(9) it washes: the residual acid of the silicon chip surface after step (8) pickling is subjected to spray cleaning；
(10) it dries: the silicon wafer after step (9) washing is dried with compressed air；
(11) diffusion furnace tube is sent into blanking: the silicon wafer after step (10) drying being sent into diffusion furnace tube in 30min and is expanded
It dissipates.
2. a kind of polycrystalline cleaning process of decline electric leakage raising efficiency as described in claim 1, it is characterised in that: step (2)
In, the concentration of nitric acid is 9 ~ 14wt% in the making herbs into wool mixed liquor, the concentration of hydrofluoric acid is 28 ~ 38wt%, flocking additive it is dense
Degree is 0.3 ~ 2wt%.
3. a kind of polycrystalline cleaning process of decline electric leakage raising efficiency as claimed in claim 2, it is characterised in that: the making herbs into wool
Belt speed control is controlled in 1.6 ~ 2.3m/min, making herbs into wool temperature at 7 ~ 9 DEG C when for making herbs into wool.
4. a kind of polycrystalline cleaning process of decline electric leakage raising efficiency as claimed in claim 1 or 2, it is characterised in that: step
(4) in, the concentration of the KOH solution is 1 ~ 7wt%；The alkali cleaning time is 10 ~ 60s.
5. a kind of polycrystalline cleaning process of decline electric leakage raising efficiency as claimed in claim 1 or 2, it is characterised in that: step
(6) in, hydrogen peroxide concentration is 4 ~ 7wt% in the cleaning solution, and KOH concentration is 1 ~ 7wt%；Cleaning time slot temperature is 40 ~ 70 DEG C,
20 ~ 70s of scavenging period.
6. a kind of polycrystalline cleaning process of decline electric leakage raising efficiency as claimed in claim 5, it is characterised in that: step (8)
In, concentration of hydrochloric acid is 10 ~ 30wt% in the mix acid liquor, and hydrofluoric acid concentration is 8 ~ 25wt%；The pickling is clear at 25 ~ 30 DEG C
Wash 30 ~ 90s.
7. a kind of polycrystalline cleaning process of decline electric leakage raising efficiency as described in claim 1 or 6, it is characterised in that step
(3) in, the spray cleaning temperature is 15 ~ 30 DEG C, and the time is 4 ~ 8s；In step (5), the spray cleaning temperature is 15 ~ 30
DEG C, the time is 4 ~ 8s；In step (7), the spray cleaning temperature is 15 ~ 30 DEG C, and the time is 4 ~ 8s；In step (9), the spray
Drenching cleaning temperature is 15 ~ 30 DEG C, and the time is 4 ~ 8s.
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Application publication date: 20190823 |