CN111628048A - Cleaning method for reworked wafer of screen printing of crystalline silicon battery - Google Patents
Cleaning method for reworked wafer of screen printing of crystalline silicon battery Download PDFInfo
- Publication number
- CN111628048A CN111628048A CN202010515714.1A CN202010515714A CN111628048A CN 111628048 A CN111628048 A CN 111628048A CN 202010515714 A CN202010515714 A CN 202010515714A CN 111628048 A CN111628048 A CN 111628048A
- Authority
- CN
- China
- Prior art keywords
- reworked
- sheet
- silver
- screen printing
- hydrochloric acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000004140 cleaning Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000007650 screen-printing Methods 0.000 title claims abstract description 14
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 30
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 28
- -1 silver-aluminum Chemical compound 0.000 claims abstract description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000002791 soaking Methods 0.000 claims abstract description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000001035 drying Methods 0.000 claims abstract description 11
- 239000002002 slurry Substances 0.000 claims abstract description 11
- 229910001868 water Inorganic materials 0.000 claims abstract description 9
- 239000011259 mixed solution Substances 0.000 claims abstract description 6
- 238000005406 washing Methods 0.000 claims abstract description 6
- 238000007598 dipping method Methods 0.000 claims abstract description 5
- 230000005587 bubbling Effects 0.000 claims abstract description 4
- 239000007788 liquid Substances 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 abstract description 4
- 229910021641 deionized water Inorganic materials 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 229910001679 gibbsite Inorganic materials 0.000 description 2
- 229910000108 silver(I,III) oxide Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/14—Wipes; Absorbent members, e.g. swabs or sponges
- B08B1/143—Wipes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to the field of solar cell reworking sheets. A cleaning method for a screen printing reworked sheet of a crystalline silicon battery comprises the steps of firstly using industrial alcohol to erase silver-aluminum slurry solidified on the reworked sheet, then soaking the reworked sheet in a mixed solution of hydrochloric acid and hydrogen peroxide, and finally soaking and washing the reworked sheet in plasma water and drying the sheet. According to the invention, a manual erasing and cleaning method is adopted, the silver-aluminum slurry is directly erased after being wetted by dipping industrial alcohol, more than 95% of the silver-aluminum slurry can be removed, then the residual silver-aluminum slurry is thoroughly cleaned by adopting a mixed solution of hydrochloric acid and hydrogen peroxide, the hydrochloric acid and the hydrogen peroxide do not react with a silicon wafer, finally, a perfect reworked wafer is obtained by bubbling cleaning and washing through deionized water and drying, and the requirement of subsequent screen printing again can be met.
Description
Technical Field
The invention relates to the field of solar cell reworking sheets.
Background
In the production and manufacturing process of the crystalline silicon battery, a large number of poor screen-printed sheets exist, and due to the conductivity of the slurry, the poor sheets are easily cleaned to cause overlarge electric leakage at the edges of the battery sheets, so that the poor sheets are degraded into the poor sheets. Such a poor sheet not only increases the printing cost, but also causes environmental pollution, and is not in accordance with the green concept of photovoltaic manufacturing.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to carry out rework cleaning on poor cells after screen printing and eliminate electric leakage at the edges of the cells.
The technical scheme adopted by the invention is as follows: a cleaning method for a screen printing reworked sheet of a crystalline silicon battery comprises the steps of firstly using industrial alcohol to erase silver-aluminum slurry solidified on the reworked sheet, then soaking the reworked sheet in a mixed solution of hydrochloric acid and hydrogen peroxide, and finally soaking and washing the reworked sheet in plasma water and drying the sheet.
When the industrial alcohol is used for erasing the silver-aluminum paste solidified on the reworked piece, the sponge is firstly used for dipping the industrial alcohol to moisten the silver-aluminum paste on the reworked piece, then the clean sponge is used for erasing the silver-aluminum paste, and the operation is repeated for 2-3 times until the obvious silver-aluminum paste (a small amount of trace which is difficult to erase can be reserved) on the reworked piece can not be seen by naked eyes.
In the mixed liquid of hydrochloric acid and hydrogen peroxide, the mass percent of hydrochloric acid is 3-8%, the mass percent of hydrogen peroxide is 4-8%, and the balance is water, and the temperature of soaking in the mixed liquid of hydrochloric acid and hydrogen peroxide is 70-80 ℃, and the time is 20-30 minutes.
When the glass is soaked in plasma water, nitrogen is introduced, and bubbling soaking and cleaning are carried out for 5-10 minutes; during drying, CDA compressed air is adopted for drying at the temperature of 70-80 ℃.
The invention has the beneficial effects that: the back aluminum paste and the front silver paste of the screen printing defective piece are not sintered at high temperature, are only naturally and solidly dried, and are directly soaked in an acid-base solution for cleaning, the solidly dried silver-aluminum paste can be gradually dissolved, and the appendix is on the surface of the whole reworked piece, so that the cleaning is not easy, the edge of the cleaned battery piece is excessively leaked electricity, and the battery piece directly becomes an unqualified silicon chip. According to the invention, a manual erasing and cleaning method is adopted, the silver-aluminum slurry is directly erased after being wetted by dipping industrial alcohol, more than 95% of the silver-aluminum slurry can be removed, then the residual silver-aluminum slurry is thoroughly cleaned by adopting a mixed solution of hydrochloric acid and hydrogen peroxide, the hydrochloric acid and the hydrogen peroxide do not react with a silicon wafer, finally, a perfect reworked wafer is obtained by bubbling cleaning and washing through deionized water and drying, and the requirement of subsequent screen printing again can be met.
Detailed Description
The invention discloses a cleaning method for a reworked wafer in screen printing of a crystalline silicon battery, and provides a cleaning method for a defective wafer which is not sintered in the screen printing process of the crystalline silicon battery. The specific implementation steps are as follows:
the partially cured slurry was wiped off. And erasing the silver-aluminum paste solidified on the cell piece by using industrial alcohol, firstly dipping the industrial alcohol by using a sponge to moisten the silver-aluminum paste on the rework piece, then erasing the silver-aluminum paste by using a clean sponge, and repeating for 3 times until the obvious silver-aluminum paste on the rework piece cannot be seen by naked eyes.
And removing the silver-aluminum paste. And (3) putting the wiped battery piece into a flower basket, and soaking the battery piece in a mixed solution of 3-8% by mass of hydrochloric acid and 4-8% by mass of hydrogen peroxide for 30min at the liquid medicine temperature of 70 ℃. The chemical reactions that occur are:
2Al+6HCl=2AlCl3+3H2↑。
Al+H2O2=Al(OH)3
Al(OH)3+3HCl =AlCl3+3H2O
Ag+H2O2=Ag2O+H2O
Ag2O+2HCl=2AgCl↓+H2O
and (3) cleaning, namely soaking the battery piece without the silver-aluminum paste in deionized water by introducing N2 gas for 5min, and washing by using flowing deionized water in the pulling process to remove acid liquor and precipitates remaining on the surface.
And (4) drying, namely drying by using CDA compressed air at the temperature of 80 ℃ for 8 min.
Claims (4)
1. A cleaning method for a screen printing reworked sheet of a crystalline silicon battery is characterized by comprising the following steps: firstly, wiping off silver-aluminum slurry solidified on a reworked sheet by using industrial alcohol, then soaking the reworked sheet in a mixed solution of hydrochloric acid and hydrogen peroxide, and finally soaking and washing the reworked sheet in plasma water and drying the reworked sheet.
2. The cleaning method for the screen printing rework sheet of the crystalline silicon cell as claimed in claim 1, wherein: when the industrial alcohol is used for erasing the silver-aluminum paste solidified on the reworked piece, the sponge is firstly used for dipping the industrial alcohol to moisten the silver-aluminum paste on the reworked piece, then the clean sponge is used for erasing the silver-aluminum paste, and the operation is repeated for 2-3 times until the obvious silver-aluminum paste on the reworked piece cannot be seen by naked eyes.
3. The cleaning method for the screen printing rework sheet of the crystalline silicon cell as claimed in claim 1, wherein: in the mixed liquid of hydrochloric acid and hydrogen peroxide, the mass percent of hydrochloric acid is 3-8%, the mass percent of hydrogen peroxide is 4-8%, and the balance is water, and the temperature of soaking in the mixed liquid of hydrochloric acid and hydrogen peroxide is 70-80 ℃, and the time is 20-30 minutes.
4. The cleaning method for the screen printing rework sheet of the crystalline silicon cell as claimed in claim 1, wherein: when the glass is soaked in plasma water, nitrogen is introduced, and bubbling soaking and cleaning are carried out for 5-10 minutes; during drying, CDA compressed air is adopted for drying at the temperature of 70-80 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010515714.1A CN111628048A (en) | 2020-06-09 | 2020-06-09 | Cleaning method for reworked wafer of screen printing of crystalline silicon battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010515714.1A CN111628048A (en) | 2020-06-09 | 2020-06-09 | Cleaning method for reworked wafer of screen printing of crystalline silicon battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111628048A true CN111628048A (en) | 2020-09-04 |
Family
ID=72273287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010515714.1A Pending CN111628048A (en) | 2020-06-09 | 2020-06-09 | Cleaning method for reworked wafer of screen printing of crystalline silicon battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111628048A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104993021A (en) * | 2015-07-23 | 2015-10-21 | 上饶光电高科技有限公司 | Method for improving conversion efficiency of reworked pieces in solar cell screen printing |
| CN106992226A (en) * | 2017-04-11 | 2017-07-28 | 东方日升新能源股份有限公司 | A kind of reworking method of the bad cell piece of silk-screen printing |
| CN108511321A (en) * | 2018-03-19 | 2018-09-07 | 徐州鑫宇光伏科技有限公司 | Do over again cleaning method and the reworking method of black silicon silicon chip after printing |
| CN109616551A (en) * | 2018-11-19 | 2019-04-12 | 横店集团东磁股份有限公司 | A kind of bad cell piece rework preocess of polycrystalline surface organic matter |
| CN109841545A (en) * | 2019-02-26 | 2019-06-04 | 镇江仁德新能源科技有限公司 | A kind of black silicon fluff making device purged |
| CN110165018A (en) * | 2019-04-18 | 2019-08-23 | 横店集团东磁股份有限公司 | A kind of polycrystalline cleaning process of decline electric leakage raising efficiency |
-
2020
- 2020-06-09 CN CN202010515714.1A patent/CN111628048A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104993021A (en) * | 2015-07-23 | 2015-10-21 | 上饶光电高科技有限公司 | Method for improving conversion efficiency of reworked pieces in solar cell screen printing |
| CN106992226A (en) * | 2017-04-11 | 2017-07-28 | 东方日升新能源股份有限公司 | A kind of reworking method of the bad cell piece of silk-screen printing |
| CN108511321A (en) * | 2018-03-19 | 2018-09-07 | 徐州鑫宇光伏科技有限公司 | Do over again cleaning method and the reworking method of black silicon silicon chip after printing |
| CN109616551A (en) * | 2018-11-19 | 2019-04-12 | 横店集团东磁股份有限公司 | A kind of bad cell piece rework preocess of polycrystalline surface organic matter |
| CN109841545A (en) * | 2019-02-26 | 2019-06-04 | 镇江仁德新能源科技有限公司 | A kind of black silicon fluff making device purged |
| CN110165018A (en) * | 2019-04-18 | 2019-08-23 | 横店集团东磁股份有限公司 | A kind of polycrystalline cleaning process of decline electric leakage raising efficiency |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200904 |
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| RJ01 | Rejection of invention patent application after publication |