CN108511321A - Do over again cleaning method and the reworking method of black silicon silicon chip after printing - Google Patents
Do over again cleaning method and the reworking method of black silicon silicon chip after printing Download PDFInfo
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- CN108511321A CN108511321A CN201810224471.9A CN201810224471A CN108511321A CN 108511321 A CN108511321 A CN 108511321A CN 201810224471 A CN201810224471 A CN 201810224471A CN 108511321 A CN108511321 A CN 108511321A
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- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 145
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 title claims abstract description 117
- 238000004140 cleaning Methods 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 66
- 238000007639 printing Methods 0.000 title claims abstract description 54
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 20
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 18
- 239000008367 deionised water Substances 0.000 claims abstract description 15
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 15
- 239000003960 organic solvent Substances 0.000 claims abstract description 13
- 230000002000 scavenging effect Effects 0.000 claims abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 55
- 229910052757 nitrogen Inorganic materials 0.000 claims description 27
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- 238000002242 deionisation method Methods 0.000 claims description 5
- 238000005406 washing Methods 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 abstract description 5
- 210000004027 cell Anatomy 0.000 description 22
- 238000001035 drying Methods 0.000 description 22
- 239000002002 slurry Substances 0.000 description 17
- 239000012535 impurity Substances 0.000 description 9
- 238000007650 screen-printing Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000000428 dust Substances 0.000 description 6
- 239000004744 fabric Substances 0.000 description 6
- 238000012797 qualification Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N hydrochloric acid Substances Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000037380 skin damage Effects 0.000 description 1
- 239000002352 surface water Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Detergent Compositions (AREA)
Abstract
The present invention relates to do over again cleaning method and the reworking methods of black silicon silicon chip after a kind of printing.Wherein, the cleaning method of doing over again of black silicon silicon chip includes the following steps after printing：It takes black silicon silicon chip to be done over again to be placed in deionized water to be cleaned by ultrasonic, then the surface of black silicon silicon chip is wiped with organic solvent, black silicon silicon chip after organic solvent is wiped first is placed in pressure pulse cleaning 20min 40min in ammonium hydroxide, is then placed in pressure pulse cleaning in deionized water again.Above-mentioned cleaning method of doing over again is suitable for the cleaning of doing over again of black silicon silicon chip, and the black silicon cell being finally prepared through this cleaning method of doing over again can reach the criterion of acceptability of black silicon cell, achieve the purpose that cleaning of doing over again.In addition, this is done over again, cleaning method is simple, eliminates the step of terpinol wipes, shortens the scavenging period of doing over again of black silicon silicon chip.
Description
Technical field
The present invention relates to solar silicon wafers manufacture fields, more particularly to a kind of cleaning side of doing over again of black silicon silicon chip after printing
Method and reworking method.
Background technology
In existing black silicon silicon chip printing process, since machinery and artificial factor often will appear some printing exceptions
And there is printing defective, these substandard products make the appearance of black silicon silicon chip or electrotransformation performance parameter abnormal, or even can to burn
Finished battery piece after knot is directly scrapped, and can not be used.Since the cost of black silicon silicon chip is larger, if there is largely scrapping
Product, it will cause cost to increase, thus in order to reduce production cost, then usually require the black silicon silicon chip generated to these printings
Product carry out reworked processing.
Currently, the cleaning method of doing over again of traditional silicon chip substandard products is：Terpinol wipes black silicon silicon chip surface --- wipes of alcohol
Wipe black silicon silicon chip surface --- hydrochloric acid cleans.But the cleaning method of doing over again of above-mentioned silicon chip substandard products is not appropriate for black silicon silicon chip
The cleaning of doing over again of product.After usually conventional cleaning, meeting a small amount of printing slurry of remaining on the surface of black silicon silicon chip, then through printing-sintering
Short circuit can occur for black silicon cell afterwards, and the cleaning method of doing over again suitable for black silicon silicon chip after printing has not been reported.
Invention content
Based on this, it is necessary in view of the above-mentioned problems, providing a kind of cleaning method of doing over again suitable for black silicon silicon chip after printing.
The cleaning method of doing over again of black silicon silicon chip, includes the following steps after a kind of printing：
It takes black silicon silicon chip to be done over again to be placed in deionized water to be cleaned by ultrasonic,
Then the surface of the black silicon silicon chip is wiped with organic solvent；
The black silicon silicon chip after the organic solvent is wiped first is placed in pressure pulse cleaning 20min-40min in ammonium hydroxide, so
It is placed in pressure pulse cleaning in deionized water again afterwards.
Above-mentioned cleaning method of doing over again is suitable for the cleaning of doing over again of black silicon silicon chip, is finally prepared through this cleaning method of doing over again
Black silicon cell can reach the criterion of acceptability of black silicon cell, achieved the purpose that cleaning of doing over again.The cleaning in addition, this is done over again
Method is simple, eliminates the step of terpinol wipes, shortens the scavenging period of doing over again of black silicon silicon chip.
A concentration of 2g/mL-3g/mL of the ammonium hydroxide in one of the embodiments,.
The power of the ultrasonic cleaning is 280W-320W in one of the embodiments,.
The time of the ultrasonic cleaning is 20min-40min in one of the embodiments,.
The organic solvent is net washing water, isopropanol or absolute ethyl alcohol in one of the embodiments,.
The scavenging period of the pressure pulse cleaning in deionized water is 8min-12min in one of the embodiments,.
Described be bubbled is that nitrogen is bubbled in one of the embodiments,.
The flow of the nitrogen is 40LPM-70LPM in one of the embodiments, and the pressure of nitrogen is 3bar-5bar.
Present invention also provides a kind of reworking methods of black silicon silicon chip after printing.
The reworking method of black silicon silicon chip after a kind of printing, the reworking method includes that black silicon silicon chip described herein is done over again
Cleaning method.
The reworking method of black silicon silicon chip is easy to operate after above-mentioned printing, and the final black silicon cell obtained of this reworking method
The criterion of acceptability that black silicon cell can be reached has achieved the purpose that do over again.
The reworking method further includes in one of the embodiments,：To after black silicon silicon chip does over again cleaning method cleaning
Black silicon silicon chip be dried, then secondary printing.
Specific implementation mode
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with specific implementation mode,
The present invention will be described in further detail.It should be appreciated that the specific embodiments described herein are only used to explain this hair
It is bright, it is not intended to limit the present invention.
Unless otherwise defined, all of technologies and scientific terms used here by the article and belong to the technical field of the present invention
The normally understood meaning of technical staff is identical.Used term is intended merely to description tool in the description of the invention herein
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term " and or " used herein includes one or more
Any and all combinations of relevant Listed Items.
The present invention provides a kind of cleaning methods of doing over again of black silicon silicon chip after printing, include the following steps：
S1, preliminary cleaning：It takes black silicon silicon chip to be done over again to be placed in deionized water to be cleaned by ultrasonic, then with organic molten
Agent wipes the surface of black silicon silicon chip.
Wherein, the main purpose of ultrasonic cleaning is by ultrasonic vibration, to reduce the printing slurry on black silicon silicon chip surface
The adhesive force between adhesive force, impurity and black silicon silicon chip between black silicon silicon chip, and then printing slurry, impurity is made to loosen
Until falling off from black silicon silicon chip.
In a preferred embodiment, the power of ultrasonic cleaning is 280W-320W.It is more advantageous to and is attached to black silicon silicon chip
Printing slurry, impurity on surface fall off.
In a preferred embodiment, the time of ultrasonic cleaning is 20min-40min.It is more advantageous to and is attached to black silicon silicon
Printing slurry, impurity on piece surface fall off.
Wherein, the main function of organic solvent wiping is the printing slurry that will be loosened after ultrasonic vibration, impurity from black silicon
It is wiped on silicon chip surface.
In a preferred embodiment, organic solvent can be that those skilled in the art think suitable reagent.Such as：
Net washing water, isopropanol or absolute ethyl alcohol, it is preferable that organic solvent is absolute ethyl alcohol, and scrub effect is more preferable, and can be prevented pair
Skin damages.
In a preferred embodiment, the specific method for black silicon silicon chip surface being wiped with organic solvent is：Use non-dust cloth
It is moistened with solvent and wipes printing slurry, impurity on the tow sides and side of black silicon silicon chip.It is, of course, understood that also
It can be moistened with solvent in other ways and wipe the surface of black silicon silicon chip to realize printing slurry, impurity from black silicon silicon chip surface
Removal.
After S1 is tentatively cleaned, most printing slurry and impurity on the surface on except black silicon silicon chip can be removed.
S2, depth cleaning：Black silicon silicon chip after organic solvent is wiped first is placed in pressure pulse cleaning 20min- in ammonium hydroxide
Then 40min is placed in pressure pulse cleaning in deionized water again.
Wherein, present inventor has found that the matte of black silicon silicon chip is small, and it is deep that printing slurry is often hidden in black silicon matte
Place, conventional cleaning solvent and technique are not easy to thoroughly remove the printing slurry for being hidden in black silicon matte depths, such as：Inventor attempts
It is attempted with the hydrochloric acid solution of various concentration, sodium hydroxide solution or hydrogen peroxide solution etc., cleaning performance is bad.And if
Cleaning is not thorough, and can cause black silicon cell short circuit after sintering.
The main function of ammonium hydroxide is that the printing slurry for the matte depths that will remain in black silicon silicon chip carries out depth removing, ammonium hydroxide
It can chemically react, generate solvable with the printing slurry of the matte depths of black silicon silicon chip the oxide of silver and the two (aluminium)
Property sediment.Furthermore it is bubbled in ammonium hydroxide cleaning process, cleaning performance can be enhanced, be conducive to the matte depths of black silicon silicon chip
Printing slurry, the soluble sediment that reacts with ammonium hydroxide be detached from black silicon silicon chip.
Wherein, the time of pressure pulse cleaning is 20min-40min in ammonium hydroxide, and the purpose is to pass through the matte to black silicon silicon chip
Depths is thoroughly cleaned, and printing slurry thereon is hidden in removal.In addition, above-mentioned scavenging period can be prevented to black silicon silicon chip
It causes to corrode, is also possible to prevent to cause harmful effect to the appearance of black silicon silicon chip, specifically, scavenging period is long, black silicon silicon
Sector-meeting is corroded by ammonium hydroxide；And scavenging period is too short, black silicon Wafer Cleaning is not thorough enough, black silicon silicon chip bad order.
In a preferred embodiment, a concentration of 2g/mL-3g/mL of ammonium hydroxide.It more efficient can remove except black silicon silicon chip
The printing slurry of matte depths remaining, and can prevent the light trapping structure to black silicon silicon chip surface from damaging.
Wherein, it is that ammonium hydroxide remaining on black silicon silicon chip surface can be removed with the purpose of deionized water pressure pulse cleaning, avoids
Residual liquor, corrosive black silicon silicon chip.
In a preferred embodiment, the deionized water pressure pulse cleaning time is 8min-12min.It in this way can be further
Improve cleaning performance.
In a preferred embodiment, it is bubbled and is bubbled for nitrogen.
Preferably, the flow of nitrogen is 40LPM-70LPM, can further increase cleaning performance in this way.
Preferably, the pressure of nitrogen is 3bar-5bar, can further increase cleaning performance in this way.
After the cleaning of S2 depth, printing slurry and impurity whole on the surface on except black silicon silicon chip can be removed.
Above-mentioned cleaning method of doing over again is suitable for the cleaning of doing over again of black silicon silicon chip, is finally prepared through this cleaning method of doing over again
Black silicon cell can reach the criterion of acceptability of black silicon cell, achieved the purpose that cleaning of doing over again.The cleaning in addition, this is done over again
Method is simple, eliminates the step of terpinol wipes, shortens the scavenging period of doing over again of black silicon silicon chip.
Present invention also provides a kind of reworking methods of black silicon silicon chip after printing.
The reworking method of black silicon silicon chip after a kind of printing, which includes doing over again for black silicon silicon chip described herein
Cleaning method.
In a preferred embodiment, above-mentioned reworking method further includes：To through black silicon silicon chip do over again cleaning method cleaning
Black silicon silicon chip afterwards is dried, then secondary printing.
Wherein, dry effect can make the appearance looks elegant of black silicon silicon chip, prevent black silicon silicon chip surface from generating watermark.
In a preferred embodiment, drying mode is drying.The water that drying can adhere to black silicon silicon chip surface is fast
Speed removal, prevents black silicon silicon chip surface from generating watermark.
Preferably, the drying speed for drying technique is 300rpm-560rpm, can preferably be adhered to black silicon silicon chip surface
Water quickly remove.
Preferably, the drying time is 4min-7min.
In a preferred embodiment, it prints for the screen printing mode of those skilled in the art's generally use.Certainly,
It is understood that other mode of printings, which can also be used, is made cell piece.
The reworking method of black silicon silicon chip is easy to operate after above-mentioned printing, and the final black silicon cell obtained of this reworking method
The criterion of acceptability that black silicon cell can be reached has achieved the purpose that do over again.
Below in conjunction with specific embodiment, the present invention is further elaborated.
Embodiment 1
Preliminary cleaning：Black silicon silicon chip 50 to be done over again is taken to be placed in progress ultrasonic cleaning 30min in deionized water, ultrasound
Wave power is 300W, then dips in tow sides and the side that absolute ethyl alcohol uniformly wipes black silicon silicon chip with non-dust cloth.
Depth is cleaned：Black silicon silicon chip after wiping is placed in a concentration of 2.5g/mL ammonium hydroxide and uses nitrogen pressure pulse cleaning
Then 30min is placed in deionization and uses nitrogen pressure pulse cleaning 10min again.Wherein, the technique of nitrogen pressure pulse cleaning is：Nitrogen
Flow is 50LPM, and the pressure of nitrogen is 3bar.
It is dry：Black silicon silicon chip after depth is cleaned, which is put into dryer, to be dried, and the drying speed for drying technique is
560rpm, drying time are 5min.
Secondary printing；To the black silicon silicon chip silk-screen printing after drying.
Then the black silicon silicon chip after silk-screen printing is sintered, obtains black silicon cell and is denoted as A1.
Embodiment 2
Preliminary cleaning：It takes black silicon silicon chip 50 to be done over again to be placed in deionized water and carries out ultrasonic cleaning 30min, ultrasonic wave
Power is 300W, then dips in tow sides and the side that absolute ethyl alcohol uniformly wipes black silicon silicon chip with non-dust cloth.
Depth is cleaned：Black silicon silicon chip after wiping is placed in a concentration of 3g/mL ammonium hydroxide and uses nitrogen pressure pulse cleaning 40min,
Then it is placed in again in deionization and uses nitrogen pressure pulse cleaning 10min.Wherein, the technique of nitrogen pressure pulse cleaning is：The flow of nitrogen is
The pressure of 50LPM, nitrogen are 3bar.
It is dry：Black silicon silicon chip after depth is cleaned, which is put into dryer, to be dried, and the drying speed for drying technique is
560rpm, drying time are 5min.
Secondary printing；To the black silicon silicon chip silk-screen printing after drying.
Then the black silicon silicon chip after silk-screen printing is sintered, obtains black silicon cell and is denoted as A2.
Comparative example 1
Cleaning：It takes black silicon silicon chip 50 to be done over again to be placed in deionized water and carries out ultrasonic cleaning 30min, ultrasonic power
For 300W, tow sides and the side that terpinol wipes black silicon silicon chip first then are dipped in non-dust cloth, then anhydrous second is dipped in non-dust cloth
Alcohol uniformly wipes tow sides and the side of black silicon silicon chip, and the black silicon silicon chip wiped is placed in 1.2mol/L aqueous hydrochloric acid solutions
30min is cleaned, is then placed in again in deionization and carries out nitrogen pressure pulse cleaning 10min.Wherein, nitrogen pressure pulse cleaning technique is:Nitrogen
The flow of gas is 50LPM, and the pressure of nitrogen is 3bar.
It is dry：Black silicon silicon chip after cleaning is put into dryer and is dried, the drying speed for drying technique is
560rpm, drying time are 5min.
Secondary printing；To the black silicon silicon chip silk-screen printing after drying.
Then the black silicon silicon chip after silk-screen printing is sintered, obtains black silicon cell and is denoted as B1.
Comparative example 2
Preliminary cleaning：It takes black silicon silicon chip 50 to be done over again to be placed in deionized water and carries out ultrasonic cleaning 30min, ultrasonic wave
Power is 300W, then dips in tow sides and the side that absolute ethyl alcohol uniformly wipes black silicon silicon chip with non-dust cloth.
Depth is cleaned：Black silicon silicon chip after wiping is placed in a concentration of 3g/mL ammonium hydroxide and uses nitrogen pressure pulse cleaning 10min,
Then it is placed in again in deionization and uses nitrogen pressure pulse cleaning 10min.Wherein, the technique of nitrogen pressure pulse cleaning is：The flow of nitrogen is
The pressure of 50LPM, nitrogen are 3bar.
It is dry：Black silicon silicon chip after depth is cleaned, which is put into dryer, to be dried, and the drying speed for drying technique is
560rpm, drying time are 5min.
Secondary printing；To the black silicon silicon chip silk-screen printing after drying.
Then the black silicon silicon chip after silk-screen printing is sintered, obtains black silicon cell and is denoted as B2.
Performance test：
Test result：
Using the black silicon cell surface soiled condition of sinter molding as appearance qualification evaluation criterion, measured with parallel resistance
Value be more than 30, Measuring of leakage current value be less than 1 as black silicon cell electrical property whether qualification criterion.Wherein, on
It states two standards and is judged as qualification, be just denoted as black silicon silicon chip qualification, accepted product percentage=qualification silicon chip number/silicon chip actually cleaned
Number.
Table 1
As shown in Table 1, the black silicon cell surface of embodiment A1 groups, A2 groups is without dirty phenomenon, and two groups of black silicon cells
Parallel resistance and Measuring of leakage current value meet the standard of qualified black silicon cell (A grades).Wherein, the accepted product percentage of A1 groups
Highest reaches 98.23%.Though and thering are individual black silicon cells to reach criterion of acceptability, most of black silicon electricity in comparative example B1 groups
Pond piece is unqualified, and qualification rate is only 20.17%.And although comparative example B2 groups are also cleaned with ammonium hydroxide, scavenging period is
The accepted product percentage of 10min, black silicon cell are significantly lower than embodiment group (A1, A2).
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. the cleaning method of doing over again of black silicon silicon chip after a kind of printing, which is characterized in that include the following steps：
It takes black silicon silicon chip to be done over again to be placed in deionized water to be cleaned by ultrasonic,
Then the surface of the black silicon silicon chip is wiped with organic solvent；
The black silicon silicon chip after the organic solvent is wiped first is placed in pressure pulse cleaning 20min-40min in ammonium hydroxide, then again
It is placed in pressure pulse cleaning in deionized water.
2. the cleaning method of doing over again of black silicon silicon chip after printing according to claim 1, which is characterized in that the ammonium hydroxide it is dense
Degree is 2g/mL-3g/mL.
3. the cleaning method of doing over again of black silicon silicon chip after printing according to claim 1, which is characterized in that the ultrasonic cleaning
Power be 280W-320W.
4. the cleaning method of doing over again of black silicon silicon chip after printing according to claim 1, which is characterized in that the ultrasonic cleaning
Time be 20min-40min.
5. the cleaning method of doing over again of black silicon silicon chip after printing according to claim 1, which is characterized in that the organic solvent
For net washing water, isopropanol or absolute ethyl alcohol.
6. the cleaning method of doing over again of black silicon silicon chip after printing according to claim 1, which is characterized in that described in deionization
The scavenging period of pressure pulse cleaning is 8min-12min in water.
7. the cleaning method of doing over again of black silicon silicon chip after printing according to claim 1, which is characterized in that described be bubbled is nitrogen
Gas bell.
8. the cleaning method of doing over again of black silicon silicon chip after printing according to claim 7, which is characterized in that the stream of the nitrogen
Amount is 40LPM-70LPM, and the pressure of nitrogen is 3bar-5bar.
9. the reworking method of black silicon silicon chip after a kind of printing, which is characterized in that the reworking method includes claim 1 to 8 times
Black silicon silicon chip described in one is done over again cleaning method.
10. the reworking method of black silicon silicon chip after printing according to claim 9, which is characterized in that the reworking method is also
Including：Black silicon silicon chip after black silicon silicon chip does over again cleaning method cleaning is dried, then secondary printing.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111628048A (en) * | 2020-06-09 | 2020-09-04 | 山西潞安太阳能科技有限责任公司 | Cleaning method for reworked wafer of screen printing of crystalline silicon battery |
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