CN107706087B - Silicon wafer cleaning method - Google Patents
Silicon wafer cleaning method Download PDFInfo
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- CN107706087B CN107706087B CN201710720566.5A CN201710720566A CN107706087B CN 107706087 B CN107706087 B CN 107706087B CN 201710720566 A CN201710720566 A CN 201710720566A CN 107706087 B CN107706087 B CN 107706087B
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- 238000004140 cleaning Methods 0.000 title claims abstract description 94
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 46
- 239000010703 silicon Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 44
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000008367 deionised water Substances 0.000 claims abstract description 25
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 25
- 238000005406 washing Methods 0.000 claims abstract description 24
- 239000002253 acid Substances 0.000 claims abstract description 13
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 10
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 10
- 238000001035 drying Methods 0.000 claims abstract description 6
- 239000011259 mixed solution Substances 0.000 claims abstract description 5
- 239000000243 solution Substances 0.000 claims description 52
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 45
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 22
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 22
- 239000000654 additive Substances 0.000 claims description 10
- 230000000996 additive effect Effects 0.000 claims description 10
- 239000003513 alkali Substances 0.000 claims description 10
- 230000005587 bubbling Effects 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 10
- 238000005554 pickling Methods 0.000 claims description 10
- 238000009210 therapy by ultrasound Methods 0.000 claims description 5
- 229910021645 metal ion Inorganic materials 0.000 abstract description 7
- 239000002245 particle Substances 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 238000011109 contamination Methods 0.000 abstract 2
- 230000000694 effects Effects 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 238000010248 power generation Methods 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a silicon wafer cleaning method which comprises the steps of front cleaning, texturing, post cleaning, acid washing, cleaning and drying. According to the invention, the mixed solution of hydrogen peroxide, ammonia water and deionized water is added before acid washing, so that metal ions of the silicon wafer can be removed more effectively, organic cost and particles on the surface of the silicon wafer can be cleaned, and the surface contamination of the silicon wafer is reduced (the cleaning mode removes the particles on the surface of the silicon wafer through alkaline oxidation, and can oxidize and remove organic matters and metal contamination on the surface), so that the silicon wafer is cleaned more cleanly, and the conversion efficiency of 0.03-0.05% of the cell is improved.
Description
Technical Field
The invention belongs to the technical field of solar cell processes, particularly relates to an alkali texturing process in a solar cell manufacturing process, and particularly relates to a silicon wafer cleaning method.
Background
In the conventional alkali texturing process, after the alkali texturing corrosion is finished, only by soaking in a mixed solution of hydrochloric acid, hydrofluoric acid and deionized water, the concentration of the hydrofluoric acid is 3-7%, the concentration of the hydrochloric acid is 68-12%, and cleaning for 5 minutes, the method can only remove part of metal ions and oxide layers on the surface of the silicon wafer, and has poor effect on removing particulate matters and organic components.
Disclosure of Invention
The invention provides a cleaning process scheme of a silicon wafer, and aims to improve the cleaning effect of the silicon wafer in an alkali texturing process and reduce the concentration of organic matters, particles and metal impurities on the surface of the silicon wafer, so that the conversion efficiency is improved.
The technical scheme is as follows: a method for cleaning a silicon wafer, which is used in an alkali texturing process, comprises the following steps:
the method comprises the following steps: front cleaning, wherein the volume ratio of the front cleaning liquid is 1: 8: 100 parts of a mixed solution of sodium hydroxide solution, hydrogen peroxide and deionized water, and cleaning the silicon wafer for 2-5 min by using a cleaning solution before use at 40-80 ℃;
step two: texturing: the volume ratio of the texturing cleaning solution is 7: 1: 120, cleaning a silicon wafer at 75-90 ℃ for 10-20 min by using a texturing cleaning solution, wherein the additive is a Nikko TS41 additive;
step three: post-cleaning: the volume ratio of the post-cleaning liquid is 1: 1: 10, using the silicon wafer at 40-80 ℃, and then cleaning the silicon wafer for 1-5 min by using a cleaning solution;
step IV: acid washing: the volume ratio of the pickling solution is 1: 2: 5, washing the silicon wafer by using hydrofluoric acid, hydrochloric acid and deionized water solution at the temperature of 20-40 ℃ for 2-8 min by using a pickling solution;
step five: washing with deionized water at 20-40 ℃ for 2-8 min;
step (c): carrying out slow pulling cleaning at 60-80 ℃ by using deionized water, wherein the speed is controlled at 2-10 mm/s;
step (c): drying with 60-80 deg.C hot air for 4-8 min.
Preferably, in the step I, the mass fraction of the sodium hydroxide solution is 30-45%, and the mass fraction of the hydrogen peroxide solution is 10-30%.
Preferably, in the step II, the mass fraction of the sodium hydroxide solution is 30-45%.
Preferably, in the third step, the mass fraction of the hydrogen peroxide is 10-30%, and the mass fraction of the ammonia water is 10-30%.
Preferably, in the step (iv), the mass fraction of the hydrofluoric acid is 20% -50%, and the mass fraction of the hydrochloric acid is 20% -50%.
Preferably, ultrasonic treatment is performed in the post-cleaning process in the step III.
More preferably, the frequency of the ultrasonic wave is 20-30 KHz.
Preferably, the bubbling treatment is performed in the acid washing process of the step (iv).
Preferably, the bubbling treatment is carried out in the washing process of the step (sixthly).
The invention has the advantages of
The mixed solution of hydrogen peroxide, ammonia water and deionized water is added before acid washing, so that metal ions of the silicon wafer can be removed more effectively, organic cost and particles on the surface of the silicon wafer can be cleaned, and surface dirt of the silicon wafer is reduced (the cleaning mode removes particles on the surface of the silicon wafer through alkaline oxidation and can oxidize and remove organic matters and metal pollution on the surface), so that the silicon wafer is cleaned more cleanly, and the conversion efficiency of the cell is improved.
By using the cleaning method disclosed by the invention, metal ions and organic solvents on the surface after texturing can be effectively removed, and the tip of the gold sub-tower generating the textured surface is subjected to tip elimination treatment, so that the damage of diffused PN junctions on the tower tip is reduced, and the open voltage of the battery piece is improved, thereby achieving the effect improvement effect of 0.03-0.05%. The efficiency of the battery end is improved by 0.05 percent, the power is improved by 0.012W, 60 pieces of the module end can be increased by 0.75W, the power generation power of the module is increased by about 0.25 percent, the power consumption cost of a photovoltaic power station can be reduced, and the photovoltaic power station plays a positive role in the leveling of the photovoltaic power generation on the internet.
Detailed Description
The invention is further illustrated by the following examples, without limiting the scope of the invention:
the method is suitable for the alkali texturing process for producing the conventional battery piece, the PERC battery piece and the double-sided battery piece in a large scale by taking the P-type and N-type monocrystalline silicon pieces as raw materials, wherein the thickness of the silicon pieces is suitable for 140-220 micrometers.
Example 1:
a method for cleaning a silicon wafer, which is used in an alkali texturing process, comprises the following steps:
the method comprises the following steps: front cleaning, wherein the volume ratio of the front cleaning liquid is 1: 8: 100 of sodium hydroxide solution, hydrogen peroxide and deionized water, and cleaning the silicon wafer for 2min by using a pre-cleaning solution at 40 ℃;
in the first step, the mass fraction of the sodium hydroxide solution is 30 percent, and the mass fraction of the hydrogen peroxide is 10 percent.
Step two: texturing: the volume ratio of the texturing cleaning solution is 7: 1: 120, and cleaning a silicon wafer for 10min at 75 ℃ by using a texturing cleaning solution, wherein the additive is a Shishao TS41 additive;
in the second step, the mass fraction of the sodium hydroxide solution is 30%.
Step three: post-cleaning: the volume ratio of the post-cleaning liquid is 1: 1: 10 of hydrogen peroxide, ammonia water and deionized water solution, and cleaning the silicon wafer for 1min by using a cleaning solution at the temperature of 40 ℃;
in the third step, the mass fraction of the hydrogen peroxide is 10 percent, and the mass fraction of the ammonia water is 10 percent.
And step three, performing ultrasonic treatment in the post-cleaning process, wherein the ultrasonic frequency is 20 KHz.
Step IV: acid washing: the volume ratio of the pickling solution is 1: 2: 5, washing the silicon wafer for 2min by using a pickling solution at the temperature of 20 ℃ by using hydrofluoric acid, hydrochloric acid and a deionized water solution;
in the fourth step, the mass fraction of the hydrofluoric acid is 20%, and the mass fraction of the hydrochloric acid is 20%.
And fourthly, bubbling treatment is carried out in the acid washing process of the step IV.
Step five: washing with deionized water at 20 deg.C for 2 min;
step (c): carrying out slow pulling cleaning at 60 ℃ by using deionized water, wherein the speed is controlled at 2 mm/s;
and sixthly, carrying out bubbling treatment in the cleaning process.
Step (c): drying with 60 deg.C hot air for 4 min.
By using the cleaning method of the embodiment, metal ions and organic solvents on the surface after texturing can be effectively removed, and the tip of the gold sub-tower generating the textured surface is removed, so that the damage of the tower tip out of a diffused PN junction is reduced, the open voltage of the battery piece is improved, and the effect improvement effect is 0.03-0.05%.
Example 2:
a method for cleaning a silicon wafer, which is used in an alkali texturing process, comprises the following steps:
the method comprises the following steps: front cleaning, wherein the volume ratio of the front cleaning liquid is 1: 8: 100 of sodium hydroxide solution, hydrogen peroxide and deionized water, and cleaning the silicon wafer for 5min by using a pre-cleaning solution at 80 ℃;
in the first step, the mass fraction of the sodium hydroxide solution is 30-45%, and the mass fraction of the hydrogen peroxide is 30%.
Step two: texturing: the volume ratio of the texturing cleaning solution is 7: 1: 120, and cleaning a silicon wafer for 20min at 90 ℃ by using a texturing cleaning solution, wherein the additive is a Shizuo TS41 additive;
in the second step, the mass fraction of the sodium hydroxide solution is 45%.
Step three: post-cleaning: the volume ratio of the post-cleaning liquid is 1: 1: 10 of hydrogen peroxide, ammonia water and deionized water solution, and cleaning the silicon wafer for 5min by using a cleaning solution at the temperature of 80 ℃;
in the third step, the mass fraction of the hydrogen peroxide is 30 percent, and the mass fraction of the ammonia water is 30 percent.
And step three, performing ultrasonic treatment in the post-cleaning process, wherein the ultrasonic frequency is 30 KHz.
Step IV: acid washing: the volume ratio of the pickling solution is 1: 2: 5, washing the silicon wafer by using a pickling solution at 40 ℃ for 8min by using hydrofluoric acid, hydrochloric acid and a deionized water solution;
in the fourth step, the mass fraction of the hydrofluoric acid is 50%, and the mass fraction of the hydrochloric acid is 50%.
And fourthly, bubbling treatment is carried out in the acid washing process of the step IV.
Step five: washing with deionized water at 40 deg.C for 8 min;
step (c): carrying out slow pulling cleaning at 80 ℃ by using deionized water, wherein the speed is controlled at 10 mm/s;
and sixthly, carrying out bubbling treatment in the cleaning process.
Step (c): drying for 8 minutes by adopting hot air at 80 ℃.
By using the cleaning method of the embodiment, metal ions and organic solvents on the surface after texturing can be effectively removed, and the tip of the gold sub-tower generating the textured surface is removed, so that the damage of the tower tip out of a diffused PN junction is reduced, the open voltage of the battery piece is improved, and the effect improvement effect is 0.03-0.05%.
Example 3:
a method for cleaning a silicon wafer, which is used in an alkali texturing process, comprises the following steps:
the method comprises the following steps: front cleaning, wherein the volume ratio of the front cleaning liquid is 1: 8: 100 of sodium hydroxide solution, hydrogen peroxide and deionized water, and cleaning the silicon wafer for 3min by using a pre-cleaning solution at 60 ℃;
in the first step, the mass fraction of the sodium hydroxide solution is 40%, and the mass fraction of the hydrogen peroxide is 20%.
Step two: texturing: the volume ratio of the texturing cleaning solution is 7: 1: 120, cleaning a silicon wafer at 85 ℃ for 10-20 min by using a texturing cleaning solution, wherein the additive is a Nikko TS41 additive;
in the second step, the mass fraction of the sodium hydroxide solution is 40%.
Step three: post-cleaning: the volume ratio of the post-cleaning liquid is 1: 1: 10 of hydrogen peroxide, ammonia water and deionized water solution, and cleaning the silicon wafer for 3min by using a cleaning solution at the temperature of 60 ℃;
in the third step, the mass fraction of the hydrogen peroxide is 20 percent, and the mass fraction of the ammonia water is 20 percent.
And step three, performing ultrasonic treatment in the post-cleaning process, wherein the ultrasonic frequency is 25 KHz.
Step IV: acid washing: the volume ratio of the pickling solution is 1: 2: 5, washing the silicon wafer by using a pickling solution at 30 ℃ for 5 min;
in the fourth step, the mass fraction of the hydrofluoric acid is 35%, and the mass fraction of the hydrochloric acid is 35%.
And fourthly, bubbling treatment is carried out in the acid washing process of the step IV.
Step five: washing with deionized water at 30 deg.C for 5 min;
step (c): carrying out slow pulling cleaning at 70 ℃ by using deionized water, wherein the speed is controlled at 6 mm/s;
and sixthly, carrying out bubbling treatment in the cleaning process.
Step (c): drying for 6 minutes by adopting hot air at 70 ℃.
By using the cleaning method of the embodiment, metal ions and organic solvents on the surface after texturing can be effectively removed, and the tip of the gold sub-tower generating the textured surface is removed, so that the damage of the tower tip out of a diffused PN junction is reduced, the open voltage of the battery piece is improved, and the effect improvement effect is 0.03-0.05%.
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the spirit or ambit of the invention as defined in the appended claims.
Claims (5)
1. A method for cleaning a silicon wafer, which is used in an alkali texturing process, comprises the following steps:
the method comprises the following steps: pre-cleaning: the volume ratio of the front cleaning liquid is 1: 8: 100 parts of a mixed solution of sodium hydroxide solution, hydrogen peroxide and deionized water, and cleaning the silicon wafer for 2-5 min by using a cleaning solution before use at 40-80 ℃; the mass fraction of the sodium hydroxide solution is 30-45%, and the mass fraction of the hydrogen peroxide is 10-30%;
step two: texturing: the volume ratio of the texturing cleaning solution is 7: 1: 120, cleaning a silicon wafer at 75-90 ℃ for 10-20 min by using a texturing cleaning solution, wherein the additive is a Nikko TS41 additive; the mass fraction of the sodium hydroxide solution is 30-45%;
step three: post-cleaning: the volume ratio of the post-cleaning liquid is 1: 1: 10, using the silicon wafer at 40-80 ℃, and then cleaning the silicon wafer for 1-5 min by using a cleaning solution; the mass fraction of the hydrogen peroxide is 10-30 percent, and the mass fraction of the ammonia water is 10-30 percent;
step IV: acid washing: the volume ratio of the pickling solution is 1: 2: 5, washing the silicon wafer by using hydrofluoric acid, hydrochloric acid and deionized water solution at the temperature of 20-40 ℃ for 2-8 min by using a pickling solution; the mass fraction of the hydrofluoric acid is 20-50%, and the mass fraction of the hydrochloric acid is 20-50%;
step five: washing with deionized water at 20-40 ℃ for 2-8 min;
step (c): carrying out slow pulling cleaning at 60-80 ℃ by using deionized water, wherein the speed is controlled at 2-10 mm/s;
step (c): drying with 60-80 deg.C hot air for 4-8 min.
2. The cleaning method according to claim 1, wherein the post-cleaning process of step (c) is performed by ultrasonic treatment.
3. The cleaning method according to claim 2, wherein the frequency of the ultrasonic wave is 20 to 30 KHz.
4. The cleaning method according to claim 1, wherein the bubbling treatment is performed during the acid washing in the step (iv).
5. The cleaning method according to claim 1, wherein the bubbling treatment is performed during the cleaning process in the step (sixty).
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| CN108746042B (en) * | 2018-03-26 | 2020-09-01 | 江苏金晖光伏有限公司 | Cleaning method for single and polycrystalline silicon wafers cut by diamond wire saw |
| CN108649098A (en) * | 2018-04-19 | 2018-10-12 | 常州捷佳创精密机械有限公司 | A kind of method of silicon chip single side etching polishing |
| CN108766869A (en) * | 2018-05-30 | 2018-11-06 | 苏州日弈新电子科技有限公司 | A kind of silicon chip of solar cell slot type cleaning method |
| CN109604244A (en) * | 2018-11-27 | 2019-04-12 | 上海申和热磁电子有限公司 | A kind of cleaning method of suitable ultra thin silicon wafers |
| CN109675858A (en) * | 2018-12-20 | 2019-04-26 | 天津中环领先材料技术有限公司 | A kind of cleaning process after wafer thinning |
| CN110479691A (en) * | 2019-07-29 | 2019-11-22 | 江苏顺风新能源科技有限公司 | A kind of cleaning method of solar battery dried flower basket |
| CN111969078B (en) * | 2020-08-04 | 2022-06-14 | 东莞南玻光伏科技有限公司 | Texturing method of monocrystalline silicon wafer, monocrystalline silicon solar cell and preparation method of monocrystalline silicon solar cell |
| CN112928185B (en) * | 2021-02-10 | 2023-10-20 | 浙江工业大学 | Preparation method of silicon surface passivation layer |
| CN113253581A (en) * | 2021-05-13 | 2021-08-13 | 中国振华集团永光电子有限公司（国营第八七三厂） | Method for removing photoresist after ion implantation |
| CN113990984B (en) * | 2021-10-26 | 2023-10-10 | 通威太阳能(金堂)有限公司 | Cleaning method of PERC crystalline silicon battery |
| CN114653668A (en) * | 2022-03-31 | 2022-06-24 | 乌海市晶易硅材料有限公司 | Method for removing oxide layer on surface of silicon material |
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| CN104393118B (en) * | 2014-12-02 | 2016-08-17 | 常州天合光能有限公司 | The crystal silicon solar batteries Wet chemical processing method that making herbs into wool is carried out with cleaning substep |
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Address after: No.20 Wenzhuang Road, Yixing Economic Development Zone, Wuxi City, Jiangsu Province, 214203 Applicant after: Huansheng photovoltaic (Jiangsu) Co.,Ltd. Address before: No.20 Wenzhuang Road, Yixing Economic Development Zone, Wuxi City, Jiangsu Province, 214203 Applicant before: DZS SOLAR (JIANGSU) Co.,Ltd. |
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