CN110571309B - Poly removal coil plating cleaning method - Google Patents
Poly removal coil plating cleaning method Download PDFInfo
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- CN110571309B CN110571309B CN201911029952.5A CN201911029952A CN110571309B CN 110571309 B CN110571309 B CN 110571309B CN 201911029952 A CN201911029952 A CN 201911029952A CN 110571309 B CN110571309 B CN 110571309B
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- 238000004140 cleaning Methods 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000007747 plating Methods 0.000 title claims abstract description 20
- 239000007788 liquid Substances 0.000 claims abstract description 16
- 230000008569 process Effects 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000003814 drug Substances 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 238000005406 washing Methods 0.000 claims abstract description 11
- 239000002253 acid Substances 0.000 claims abstract description 10
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000005554 pickling Methods 0.000 claims abstract description 5
- 238000001035 drying Methods 0.000 claims abstract description 3
- 238000009713 electroplating Methods 0.000 claims abstract 2
- 238000002161 passivation Methods 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 230000009471 action Effects 0.000 claims description 2
- 230000018044 dehydration Effects 0.000 claims description 2
- 238000006297 dehydration reaction Methods 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000004804 winding Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 description 10
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000005498 polishing Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 101100409194 Rattus norvegicus Ppargc1b gene Proteins 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000009500 colour coating Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
The invention discloses a novel cleaning method for removing poly-electroplating, wherein the cleaning method is characterized in that the process steps from feeding to blanking are operated on a chain type machine table, and particularly, HF/HNO is adopted for front etching in the cleaning process step3Etching with the liquid at 10-20 deg.C and HF/HNO3/H2The volume ratio of O is 1:10: 13-1: 12: 15; by HNO3Generating an oxide layer on the surface of the silicon wafer, and removing the plating winding area by using HF; KOH/H is used for alkaline washing2The mass ratio of the O liquid medicine is 1: 15-1: 20; acid pickling is carried out by adopting O3/HF/HCl, where O3The concentration is 15-30ppm, and the volume ratio of HF/HCl is 1: 1-2: 5; and the acid washing step 2 adopts HF/HCl liquid medicine, and finally, cleaning, dehydrating and drying. The invention adopts a cleaning process, thereby reducing the investment of equipment cost and improving the productivity and yield.
Description
Technical Field
The invention belongs to the field of solar photovoltaic industry, and particularly relates to a Poly-removing and Poly-plating-winding cleaning method in a P-type crystalline silicon TOPCon process.
Background
Description of background art paragraphs clean energy has become a necessary trend for the current era of development. For the solar cell industry, the technology of mass production at present is a high-efficiency crystalline silicon passivated emitter and back cell, namely a perc (passivated emitter and reactor cell) cell. The efficiency which can be achieved by mass production is only 22%, and the bottleneck stage of the efficiency is met. As companies seek high-efficiency batteries, passivation is performed on the front surface field, i.e., a selective emitter process (P-TOPCon for short) with polysilicon doping, based on the conventional PERC technology. The P-TOPCon process involves back passivation, which can greatly improve the efficiency of the cell, and is a necessary trend for the development of the cell in the future. A new term, tunneling oxidation passivation, or poly passivation, has been introduced. However, the technology has certain defects that the winding plating cannot be removed, so that the appearance is influenced, and the electrical property of the battery piece is directly influenced. The conventional plating cleaning process flow at present is Poly growth → back surface silicon nitride → removal of front surface silicon nitride → TMAH polishing → HF cleaning. Additionally, a film plating device is added to manufacture silicon nitride on the back surface as a mask layer, the silicon nitride film enters a chain type BSG/PSG machine station to use a 10-15% HF single surface to remove a front silicon nitride film, then enters a groove type machine station to carry out front polishing at the temperature of 80 ℃ by using TMAH and a polishing additive, and the BSG and PSG are removed through the 5-8% HF concentration. The method has the advantages of low productivity, high cost and no suitability for mass production. The commonly used cleaning process is mainly to grow a front mask layer before poly is grown, and then to clean the plating by using a tetramethylammonium hydroxide (TMAH) polishing solution. The process mode is only suitable for small-batch research and development, and is high in energy consumption, long in operation process and not suitable for batch production for large-scale mass production.
The invention adopts an etching cleaning mode, can effectively remove poly plating and protect the front surface B expanding surface. The process has the characteristics of taking into account the machine of the production line, having no need of additional investment, high productivity, short process flow, low energy consumption, effectively improving the production yield and quality and the like.
Disclosure of Invention
The invention discloses a cleaning method for removing Poly coiled plating, which is characterized in that the specific cleaning process flow comprises the steps of Poly growth → feeding → front etching → alkali washing → acid washing 1 → acid washing 2 → discharging. The cleaning method is characterized in that the process steps from feeding to discharging are all operated on a chain type machine, and particularly the cleaning process steps are as follows:
1) front etching, adopting HF/HNO3 liquid to etch at low temperature, controlling the temperature at 10-20 deg.C, HF/HNO3/H2The volume ratio of O is controlled to be 1:10: 13-1: 12:15, and the time is 1-2 min; by HNO3The strong oxidizing property of the silicon wafer generates an oxide layer on the surface of the silicon wafer, and then the plating area is removed through the etching action of HF without damaging the B junction;
2) alkali washing, namely, the KOH/H2O liquid medicine mass ratio is controlled to be 1: 15-1: 20, the time is 0.5-1min, and the acid of the etching liquid can be effectively neutralized;
3) acid washing 1-with O3HF/HCl, which can effectively remove the dirt on the surface of the silicon chip and can obtain better passivation effect, wherein the concentration of O3 is controlled to be 15-30ppm, the volume ratio of HF/HCl is controlled to be 1: 1-2: 5, and the time is 0.5-1 min;
4) and (2) pickling, namely adopting HF/HCl liquid medicine, controlling the volume ratio of the HF/HCl liquid medicine to be 1: 1-3: 1, and performing cleaning, dehydration and drying treatment on the surface of the silicon wafer.
The invention mainly discloses a cleaning process for removing poly winding plating, thereby reducing the investment of equipment cost and improving the productivity and yield. The invention has the following effects:
1. the problem of poly winding plating can be solved by one chain type cleaning machine, and the cost is saved without additional investment;
the solution of poly coil plating effectively improves the production yield and the electrical performance yield, and the iVOC improves 5 mV;
3. the Poly-removing coil plating cleaning method is suitable for mass production.
Drawings
Fig. 1 macroscopic photograph of a cell before washing.
Fig. 2 macroscopic photograph of the cell after washing.
Detailed Description
The present embodiment is only for explaining the present invention, and it is not limited to the present invention, and those skilled in the art can make modifications of the present embodiment without inventive contribution as needed after reading the present specification, but all of them are protected by patent law within the scope of the claims of the present invention.
Example 1
The cleaning method for removing the poly winding plating comprises the following specific procedures of: feeding after Poly growth, entering a chain type machine, firstly performing front etching treatment by adopting HF/HNO3Etching with the liquid at 15 deg.C and HF/HNO3/H2The volume ratio of O is controlled to be 1:10:15, and the time is about 1min; then the mixture enters an alkaline washing tank, the ratio of KOH/H2O liquid medicine is controlled to be 1:15, and the time is 1 min; then enters a pickling tank 1, O3Setting the concentration to be 20ppm, controlling the volume ratio of HF to HCl to be 1:3.5, and keeping the time to be 0.5 min; entering the last cleaning procedure, namely a pickling tank 2, immersing the silicon wafer into HF/HCl liquid medicine with the volume ratio of 2:1, and then performing the functions of cleaning and dehydrating the surface of the silicon wafer for about 1-2 min. Fig. 1 is a macroscopic photograph of the cell before cleaning, and it can be seen that the peripheral plating area of the cell contains a colored plating film. The macroscopic photograph of the cleaned cell is shown in fig. 2, the color coating film on the surface surrounding the plating area is invisible, and the surface has no obvious abnormal phenomenon. The cleaning process is simple, the problem of poly winding plating can be solved only by one chain type cleaning machine, extra investment cost is not increased, and large-scale mass production is facilitated.
Claims (1)
1. A cleaning method for removing Poly-electroplating is characterized in that the specific cleaning process flow steps are Poly growth → feeding → front etching → alkali cleaning → acid cleaning 1 → acid cleaning 2 → discharging, wherein the process steps from feeding to discharging are all operated on a chain machine, and particularly relates to the cleaning process steps as follows:
1) front etching-using HF/HNO3Etching the liquid medicine at low temperature, controlling the temperature at 10-20 ℃, controlling the volume ratio of HF/HNO3/H2O at 1:10: 13-1: 12:15, and keeping the time at 1-2 min; by HNO3The strong oxidizing property of the silicon wafer generates an oxide layer on the surface of the silicon wafer, and then the plating area is removed through the etching action of HF without damaging the B junction;
2) alkaline washing-with KOH/H2The mass ratio of the O liquid medicine is controlled to be 1: 15-1: 20, the time is 0.5-1min, and the acid of the etching liquid can be effectively neutralized;
3) acid washing 1-with O3HF/HCl, which can effectively remove the dirt on the surface of the silicon chip and can obtain better passivation effect, wherein the concentration of O3 is controlled to be 15-30ppm, the volume ratio of HF/HCl is controlled to be 1: 1-2: 5, and the time is 0.5-1 min;
4) and (2) pickling, namely adopting HF/HCl liquid medicine, controlling the volume ratio of the HF/HCl liquid medicine to be 1: 1-3: 1, and performing cleaning, dehydration and drying treatment on the surface of the silicon wafer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2019102152124 | 2019-03-20 | ||
| CN201910215212 | 2019-03-20 |
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| Publication Number | Publication Date |
|---|---|
| CN110571309A CN110571309A (en) | 2019-12-13 |
| CN110571309B true CN110571309B (en) | 2021-03-16 |
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| CN201911029952.5A Active CN110571309B (en) | 2019-03-20 | 2019-10-28 | Poly removal coil plating cleaning method |
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| CN111354838B (en) * | 2019-12-27 | 2022-07-15 | 晶澳（扬州）太阳能科技有限公司 | Solar cell, preparation method thereof and processing method of N-type doped silicon film |
| CN111640825B (en) * | 2020-06-16 | 2021-09-21 | 东方日升（常州）新能源有限公司 | Manufacturing method of N-type contact passivation solar cell and method for improving yield |
| CN113488384B (en) * | 2021-06-28 | 2022-09-02 | 西安隆基乐叶光伏科技有限公司 | Solar cell and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015039023A1 (en) * | 2013-09-16 | 2015-03-19 | Heraeus Precious Metals North America Conshohocken Llc | Electroconductive paste with adhesion promoting glass |
| CN108615789A (en) * | 2018-03-30 | 2018-10-02 | 浙江晶科能源有限公司 | A method of removal is around plating |
| CN109148647A (en) * | 2018-09-07 | 2019-01-04 | 江苏顺风光电科技有限公司 | A kind of preparation method of TOPCon structure battery |
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| US9281435B2 (en) * | 2011-05-27 | 2016-03-08 | Csi Cells Co., Ltd | Light to current converter devices and methods of manufacturing the same |
| US9728669B2 (en) * | 2013-03-06 | 2017-08-08 | Sino-American Silicon Products Inc. | Solar cell and method of manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015039023A1 (en) * | 2013-09-16 | 2015-03-19 | Heraeus Precious Metals North America Conshohocken Llc | Electroconductive paste with adhesion promoting glass |
| CN108615789A (en) * | 2018-03-30 | 2018-10-02 | 浙江晶科能源有限公司 | A method of removal is around plating |
| CN109148647A (en) * | 2018-09-07 | 2019-01-04 | 江苏顺风光电科技有限公司 | A kind of preparation method of TOPCon structure battery |
Non-Patent Citations (1)
| Title |
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| Effects of soiling and cleaning on the reflectance and solar heat gain of a light-colored roofing membrane;Ronnen Levinson等;《Atmospheric Environment》;20051231;第39卷(第40期);全文 * |
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Effective date of registration: 20240102 Address after: No. 18, Wenshan Road, Chahe Town, Lai'an County, Chuzhou City, Anhui Province 239200 Patentee after: Chuzhou Jietai New Energy Technology Co.,Ltd. Address before: 213164 Changzhou University, 21 Gehu Middle Road, Wujin District, Changzhou City, Jiangsu Province Patentee before: CHANGZHOU University |
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