CN108615789A - A method of removal is around plating - Google Patents
A method of removal is around plating Download PDFInfo
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- CN108615789A CN108615789A CN201810293240.3A CN201810293240A CN108615789A CN 108615789 A CN108615789 A CN 108615789A CN 201810293240 A CN201810293240 A CN 201810293240A CN 108615789 A CN108615789 A CN 108615789A
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000007747 plating Methods 0.000 title claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 51
- 239000010703 silicon Substances 0.000 claims abstract description 51
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 16
- 238000009792 diffusion process Methods 0.000 claims abstract description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052796 boron Inorganic materials 0.000 claims abstract description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 6
- 239000011574 phosphorus Substances 0.000 claims abstract description 6
- 239000003513 alkali Substances 0.000 claims abstract description 5
- 235000008216 herbs Nutrition 0.000 claims abstract description 5
- 210000002268 wool Anatomy 0.000 claims abstract description 5
- 239000000243 solution Substances 0.000 claims description 25
- 239000011259 mixed solution Substances 0.000 claims description 20
- 238000002791 soaking Methods 0.000 claims description 10
- 238000005406 washing Methods 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 7
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 17
- 230000008569 process Effects 0.000 abstract description 10
- 239000003153 chemical reaction reagent Substances 0.000 abstract description 7
- 238000004140 cleaning Methods 0.000 abstract description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 4
- 230000001737 promoting effect Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000006255 coating slurry Substances 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010200 validation analysis Methods 0.000 description 1
- 230000010148 water-pollination Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
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Abstract
The invention discloses a kind of removals around the method for plating, including：Step 1, front boron diffusion is carried out to the silicon chip after alkali making herbs into wool, forms bsg layer；Step 2, after carrying out back side pn-junction etching to the silicon chip, SiON mask layers are plated on the bsg layer surface；Step 3, the silicon chip is placed in HF solution, the removal back side is around plating；Step 4, phosphorus diffusion is carried out to the back side of the silicon chip, forms PSG layers.The removal protects positive bsg layer by using the method that SiON mask layers do mask around the method for plating; make existing production line PECVD device; it is that manufacture of solar cells often uses chemical reagent, process window big that later stage cleaning, which only needs easy slot-type device, chemical reagent; yield production type is preferable; the back side can be completely removed around plating, pressure and short circuit current are opened in raising, while promoting the transfer efficiency for making battery; it is increased without new equipment, it is less to increase cost.
Description
Technical field
The present invention relates to photovoltaic module manufacturing technology fields, more particularly to a kind of removal around the method for plating.
Background technology
With being constantly progressive for technology so that the cost of electricity-generating of the new energy such as photovoltaic generation constantly declines, and gradually substitution passes
The share for fossil energy of uniting, additionally it is possible to while coping with traditional fossil energy crisis, reduce the pollution to environment.Photovoltaic industry
Competition, be concentrated mainly on improve solar cell transfer efficiency and component power.
Existing silicon chip is due to that with the minority carrier life time higher than P-type wafer, can be fabricated to the high efficiency of double-side photic, low decline
The solar cell subtracted is being increasingly becoming solar cell industry focus of attention.As solar battery structure such as N-type is double
Face, TOPCon (Tunnel Oxide Passivation Contact；Tunnel oxidation passivation contact) increase and technology into
Step, share of the N-type single crystal battery in whole market are just gradually increasing.
And in N-type cell double-side cell manufacturing process, masking process can be all used, and there is mask just necessarily to have around plating
Film.In N-type double-side cell manufacturing process, since it is desired that spreading twice, masking process will be used, generally carries out boron expansion first
It dissipates, BSG does mask, the PN junction at the back side is quickly removed using etching apparatus, then carry out phosphorus diffusion.Also have and covered using slurry for rotary coating
Film.
When quickly removing the PN junction at the back side, acid solution or lye may cover the silicon chip after boron diffusion, it is difficult to which control is to just
Face BSG is completely retained, and positive BSG has certain corrosion failure risk, can thus not have mask effect, serious shadow
Ring the efficiency of final battery；Spin coating slurry for mask have the later stage cleaning etc. pollution problems, volume production and feasibility it is still to be tested.
And the equipment cost that this two removals are designed around the method for plating is higher, has further raised the cost of photovoltaic module, has been unfavorable for carrying
The competitiveness of high enterprise.
Invention content
The object of the present invention is to provide a kind of removals around the method for plating, using existing equipment and uses solar-electricity
Thoroughly around plating, that improves photovoltaic cell opens pressure and short circuit current to common agents in the production process of pond, improves transfer efficiency for removal,
It is less to increase cost, the yields and competitiveness of product greatly improved.
In order to solve the above technical problems, an embodiment of the present invention provides a kind of methods removed around plating, including：
Step 1, front boron diffusion is carried out to the silicon chip after alkali making herbs into wool, forms bsg layer；
Step 2, after carrying out back side pn-junction etching to the silicon chip, SiON mask layers are plated on the bsg layer surface；
Step 3, the silicon chip is placed in HF solution, the removal back side is around plating；
Step 4, phosphorus diffusion is carried out to the back side of the silicon chip, forms PSG layers.
Wherein, further include between the step 3 and the step 4：
Step 5, the silicon chip is placed in KOH and H2O2Mixed solution or NH4OH and H2O2Mixed solution in.
Wherein, the step 5 includes：
The silicon chip is placed in the KOH that mass ratio is 1%~2% and the H that mass ratio is 5%~10%2O2Mixed solution
Or mass ratio be 5%~10% NH4OH and mass ratio be 5%~10% H2O2 mixed solution in soaking and washing 1min~
2min。
Wherein, between the step 4 and the step 5, further include：
Step 6, the silicon chip is placed in soaking and washing in the mixed solution of HF solution and HCl solution, removes the silicon chip
The K ions on surface.
Wherein, between the step 4 and the step 5, further include：
Step 6, it is 0.5%~1% the silicon chip to be placed in HF solution that mass ratio is 0.5%~1% with mass ratio
Soaking and washing in the mixed solution of HCl solution removes the K ions of the silicon chip surface.
Wherein, the thickness of the SiON mask layers is 120nm~180nm.
Wherein, the step 3 includes：
By the silicon chip be placed in mass ratio be 5%~20% HF solution in impregnate 5min~20min, removal the back side around
Plating.
The removal that the embodiment of the present invention is provided has the following advantages compared with prior art around the method for plating：
The method provided in an embodiment of the present invention removed around plating, by using the method that SiON mask layers do mask, to just
The bsg layer in face is protected so that and existing production line PECVD device, later stage cleaning only need easy slot-type device,
Chemical reagent be manufacture of solar cells often use chemical reagent, process window is big, and yield production type is preferable, can completely remove the back side around
Pressure and short circuit current are opened in plating, raising, while promoting the transfer efficiency for making battery, are increased without new equipment, are increased cost
It is less.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is the present invention
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 is the step flow diagram of one embodiment of method of the removal provided in an embodiment of the present invention around plating；
Fig. 2 is the step flow diagram of another embodiment of method of the removal provided in an embodiment of the present invention around plating.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
~Fig. 2 is please referred to Fig.1, Fig. 1 is the step of one embodiment of method of the removal provided in an embodiment of the present invention around plating
Rapid flow diagram；Fig. 2 is that removal provided in an embodiment of the present invention is shown around the step flow of another embodiment of the method for plating
It is intended to.
In a specific embodiment, the method removed around plating, including：
Step 1, front boron diffusion is carried out to the silicon chip after alkali making herbs into wool, forms bsg layer；
Step 2, after carrying out back side pn-junction etching to the silicon chip, SiON mask layers are plated on the bsg layer surface；
Step 3, the silicon chip is placed in HF solution, the removal back side is around plating；
Step 4, phosphorus diffusion is carried out to the back side of the silicon chip, forms PSG layers.
By using the method that SiON mask layers do mask, positive bsg layer is protected so that existing production line
PECVD device, it is the common chemistry examination of manufacture of solar cells that later stage cleaning, which only needs easy slot-type device, chemical reagent,
Agent, process window is big, and yield production type is preferable, can completely remove the back side around plating, pressure and short circuit current are opened in raising, are promoted so that battery
Transfer efficiency while, be increased without new equipment, it is less to increase cost, greatly improves the yields and competitiveness of product.
The silicon chip in the present invention is pointed out that mainly for N-type silicon chip, but is not limited to N-type silicon chip.
After increasing SiON mask layers in the present invention, SiON mask layers not only can be used as anti-reflection layer, in photoetching process
In prevent from reflecting.
The present invention is not especially limited the deposition method and deposition thickness of SiON mask layers, and main function is in photoetching
In the process, positive bsg layer is protected.
Mainly by using silicon chip to be placed in HF solution in the present invention, the removal back side is around plating.But it is inevitable
There are the impurity such as greasy dirt for introducing, therefore come the equal impurity that degrease, to further include between the step 3 and the step 4：
Step 5, the silicon chip is placed in KOH and H2O2Mixed solution or NH4OH and H2O2Mixed solution in.
It should be pointed out that solution type, concentration, removal time and the temperature of the invention in the cleaning step is not
Make specific limit.
Specifically, the step 5 generally comprises：
The silicon chip is placed in the KOH that mass ratio is 1%~2% and the H that mass ratio is 5%~10%2O2Mixed solution
Or the NH that mass ratio is 5%~10%4The H that OH is 5%~10% with mass ratio2O2Mixed solution in soaking and washing 1min~
2min。
Further, due to introducing foreign metal ion in above-mentioned cleaning process, the conversion of photovoltaic cell is imitated
Rate has larger negative effect, and so that surface is hydrophily, it is possible to the life and reliability for reducing photovoltaic cell, because
This between the step 4 and the step 5, further includes in order to solve this problem：
Step 6, the silicon chip is placed in soaking and washing in the mixed solution of HF solution and HCl solution, removes the silicon chip
The K ions on surface.
Specifically, between the step 4 and the step 5, further include：
Step 6, it is 0.5%~1% the silicon chip to be placed in HF solution that mass ratio is 0.5%~1% with mass ratio
Soaking and washing in the mixed solution of HCl solution removes the K ions of the silicon chip surface.
The present invention is not especially limited the thickness of SiON mask layers, can carry out validation trial, the SiON
The thickness of mask layer is generally 120nm~180nm.
Removal is mainly placed in HF solution around plating in the present invention, and the present invention is not especially limited detailed process, and one
As the step 3 include：
By the silicon chip be placed in mass ratio be 5%~20% HF solution in impregnate 5min~20min, removal the back side around
Plating.
In one embodiment, the method around plating for removing silicon chip is as follows：
Front boron diffusion is carried out to the N-type silicon chip after alkali making herbs into wool, forms bsg layer；
After the SiON mask layers that 120nm thickness is plated on the bsg layer surface, back-etching pn-junction is carried out to the N-type silicon chip；
The N-type silicon chip is placed in the HF solution that mass ratio is 20% and impregnates 5min；
The N-type silicon chip is placed in the KOH that mass ratio is 2% and the H that mass ratio is 10%2O2Mixed solution in impregnate
Clean 1min；
The N-type silicon chip is placed in the mixed solution of the HF solution that mass ratio is 1% and the HCl solution that mass ratio is 1%
Middle soaking and washing 1min removes the K ions on the N-type silicon chip surface；
Phosphorus diffusion is carried out to the back side of the N-type silicon chip, forms PSG layers.
In conclusion removal provided in an embodiment of the present invention does mask around the method for plating by using SiON mask layers
Method protects positive bsg layer so that existing production line PECVD device, later stage cleaning only need easy
Slot-type device, chemical reagent are that manufacture of solar cells often uses chemical reagent, and process window is big, and yield production type is preferable, can be complete
The back side is removed around plating, pressure and short circuit current are opened in raising, while promoting the transfer efficiency for making battery, are increased without new set
It is standby, it is less to increase cost.
Removal provided by the present invention is described in detail around the method for plating above.Specific case used herein
Principle and implementation of the present invention are described, and the explanation of above example is only intended to help to understand side of the invention
Method and its core concept.It should be pointed out that for those skilled in the art, not departing from the principle of the invention
Under the premise of, it can be with several improvements and modifications are made to the present invention, these improvement and modification also fall into the claims in the present invention
In protection domain.
Claims (7)
1. a kind of removal is around the method for plating, which is characterized in that including：
Step 1, front boron diffusion is carried out to the silicon chip after alkali making herbs into wool, forms bsg layer；
Step 2, after carrying out back side pn-junction etching to the silicon chip, SiON mask layers are plated on the bsg layer surface；
Step 3, the silicon chip is placed in HF solution, the removal back side is around plating；
Step 4, phosphorus diffusion is carried out to the back side of the silicon chip, forms PSG layers.
2. method of the removal around plating as described in claim 1, which is characterized in that also wrapped between the step 3 and the step 4
It includes：
Step 5, the silicon chip is placed in KOH and H2O2Mixed solution or NH4OH and H2O2Mixed solution in.
3. method of the removal around plating as claimed in claim 2, which is characterized in that the step 5 includes：
The silicon chip is placed in the KOH that mass ratio is 1%~2% and the H that mass ratio is 5%~10%2O2Mixed solution or matter
Amount is than the NH for 5%~10%4The H that OH is 5%~10% with mass ratio2O2Mixed solution in soaking and washing 1min~2min.
4. method of the removal around plating as claimed in claim 3, which is characterized in that between the step 4 and the step 5, also
Including：
Step 6, the silicon chip is placed in soaking and washing in the mixed solution of HF solution and HCl solution, removes the silicon chip surface
K ions.
5. method of the removal around plating as claimed in claim 4, which is characterized in that between the step 4 and the step 5, also
Including：
Step 6, that the silicon chip is placed in the HCl that HF solution that mass ratio is 0.5%~1% and mass ratio are 0.5%~1% is molten
Soaking and washing in the mixed solution of liquid removes the K ions of the silicon chip surface.
6. as claimed in claim 5 removal around plating method, which is characterized in that the thickness of the SiON mask layers be 120nm~
180nm。
7. method of the removal around plating as claimed in claim 6, which is characterized in that the step 3 includes：
The silicon chip is placed in the HF solution that mass ratio is 5%~20% and impregnates 5min~20min, the removal back side is around plating.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810293240.3A CN108615789A (en) | 2018-03-30 | 2018-03-30 | A method of removal is around plating |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810293240.3A CN108615789A (en) | 2018-03-30 | 2018-03-30 | A method of removal is around plating |
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Cited By (6)
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| CN109698254A (en) * | 2018-12-26 | 2019-04-30 | 浙江晶科能源有限公司 | A method of removal LPCVD polysilicon is around plating |
| CN109962126A (en) * | 2019-04-29 | 2019-07-02 | 浙江晶科能源有限公司 | The manufacturing system and method for N-type passivation contact battery |
| CN110416364A (en) * | 2019-08-07 | 2019-11-05 | 山西潞安太阳能科技有限责任公司 | The back side monocrystalline PERC alkaline etching technique |
| CN110571309A (en) * | 2019-03-20 | 2019-12-13 | 常州大学 | Novel Poly removal coil plating cleaning method |
| CN113013029A (en) * | 2019-12-20 | 2021-06-22 | 苏州阿特斯阳光电力科技有限公司 | Additive for removing polycrystalline silicon or amorphous silicon by spin coating of silicon solar cell, spin coating removing method and method for improving yield of N-type cell |
| WO2022016920A1 (en) * | 2020-07-22 | 2022-01-27 | 常州时创能源股份有限公司 | Preparation method for topcon battery |
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| CN110571309A (en) * | 2019-03-20 | 2019-12-13 | 常州大学 | Novel Poly removal coil plating cleaning method |
| CN110571309B (en) * | 2019-03-20 | 2021-03-16 | 常州大学 | Poly removal coil plating cleaning method |
| CN109962126A (en) * | 2019-04-29 | 2019-07-02 | 浙江晶科能源有限公司 | The manufacturing system and method for N-type passivation contact battery |
| CN109962126B (en) * | 2019-04-29 | 2023-12-05 | 浙江晶科能源有限公司 | Manufacturing system and method of N-type passivation contact battery |
| CN110416364A (en) * | 2019-08-07 | 2019-11-05 | 山西潞安太阳能科技有限责任公司 | The back side monocrystalline PERC alkaline etching technique |
| CN110416364B (en) * | 2019-08-07 | 2021-04-20 | 山西潞安太阳能科技有限责任公司 | Single crystal PERC back alkali etching process |
| CN113013029A (en) * | 2019-12-20 | 2021-06-22 | 苏州阿特斯阳光电力科技有限公司 | Additive for removing polycrystalline silicon or amorphous silicon by spin coating of silicon solar cell, spin coating removing method and method for improving yield of N-type cell |
| CN113013029B (en) * | 2019-12-20 | 2022-07-29 | 苏州阿特斯阳光电力科技有限公司 | Additive for removing polycrystalline silicon or amorphous silicon by spin coating of silicon solar cell, spin coating removing method and method for improving yield of N-type cell |
| WO2022016920A1 (en) * | 2020-07-22 | 2022-01-27 | 常州时创能源股份有限公司 | Preparation method for topcon battery |
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Application publication date: 20181002 |