WO2022016920A1 - Preparation method for topcon battery - Google Patents

Preparation method for topcon battery Download PDF

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Publication number
WO2022016920A1
WO2022016920A1 PCT/CN2021/087716 CN2021087716W WO2022016920A1 WO 2022016920 A1 WO2022016920 A1 WO 2022016920A1 CN 2021087716 W CN2021087716 W CN 2021087716W WO 2022016920 A1 WO2022016920 A1 WO 2022016920A1
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layer
mask layer
solution
preparing
silicon wafer
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PCT/CN2021/087716
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French (fr)
Chinese (zh)
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任常瑞
张佳舟
赵潇祺
王敏
符黎明
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常州时创能源股份有限公司
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Publication of WO2022016920A1 publication Critical patent/WO2022016920A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table

Definitions

  • the present invention relates to a preparation method of a TOPCon battery.
  • TOPCon Tel Oxide Passivated Contact
  • a highly doped amorphous silicon thin layer on the back of the battery, which can realize the selective passage of carriers and block the recombination of minority carriers and holes.
  • the chemical passivation of the oxide layer and the field-induced passivation effect of the highly doped polysilicon can further improve the open-circuit voltage and short-circuit current of the battery, and the conversion efficiency of the battery has a large room for improvement.
  • the backside tunneling layer and amorphous silicon of the existing TOPCon structure cells are mainly prepared by chemical vapor deposition method, and serious wrapping occurs during the production process.
  • the existing technology mainly solves the problem of wrapping plating by cleaning or using special materials (such as SiC, SiNx, etc.) as a mask layer.
  • special materials such as SiC, SiNx, etc.
  • the special material mask layer used is mostly prepared by chemical vapor deposition CVD method or atomic layer deposition ALD method in a tube furnace. .
  • many SiNx films prepared by CVD are currently used as masks, and the raw material is special gas SiH 4 .
  • the reaction time in the tube furnace is long, and the prepared SiNx film needs more than 10min in the HF tank.
  • the reaction time can be removed. If the CVD method is used to prepare the SiOx mask, a high temperature time of more than 10 minutes is required to achieve the effect of blocking poly-Si.
  • using the ALD method to prepare the mask layer requires a large investment in equipment, and the film layer prepared by the ALD method needs more than 20 minutes of reaction time in the HF tank to be completely removed.
  • the present invention provides a preparation method of a TOPCon battery, which includes preparing a silicon wafer front mask layer, and the mask layer is used to block poly-Si wrapping plating;
  • the specific steps for preparing the silicon wafer front mask layer include solution deposition and high temperature curing; solution deposition adopts spin coating, spray coating or roller coating, the deposited solution is silica sol or aluminum sol, and the prepared mask layer is SiOx layer, SiNx layer, SiC layer or Al 2 O 3 layer.
  • the thickness of the deposition is 1-100 ⁇ m.
  • the high temperature curing is carried out in a chain furnace or a tube furnace.
  • the high temperature curing atmosphere is nitrogen, oxygen or nitrogen-oxygen mixture.
  • the high temperature curing temperature is 200-700°C.
  • the high temperature curing time is 10-200s.
  • the above-mentioned preparation method of the TOPCon battery further includes cleaning and removing the mask layer, and cleaning and removing the mask layer is performed after removing the poly-Si wrapping; the cleaning solution used for cleaning and removing the mask layer is 1wt% ⁇ 10wt% % HF or 1wt% ⁇ 10wt% KOH solution.
  • the cleaning time for cleaning and removing the mask layer is 3-8 minutes.
  • the preparation method of the above-mentioned TOPCon battery its specific steps include:
  • a tunnel oxide layer and a polysilicon layer are grown on the backside of the silicon wafer;
  • the etching solution adopts a 5wt%-15wt% HF/HNO 3 mixed solution, or a 5wt%-15wt% KOH solution, the immersion time is 30-500s, and the backside mask wrapping layer is removed; step 7), the etching solution is selected from one or more of KOH, NaOH, and TMAH.
  • the present invention proposes a solution method to prepare the mask layer to solve the problem of poly-Si wrapping, avoiding the problem of poly-Si wrapping.
  • Large equipment investment, safe and environmentally friendly raw materials, non-toxic and easy to obtain can quickly obtain a mask layer that blocks poly-Si within 10 to 200s, and can protect the front PN junction in the process of etching and removing BSG on the back. It will not be damaged in an alkaline environment.
  • the mask layer After cleaning, the mask layer only needs to be immersed in a 1wt%-10wt% HF solution or a 1wt%-10wt% KOH solution for 3-8min to be removed. After removal, it has no effect on electrical properties. , to meet the needs of existing TOPCon battery production.
  • the mask layer prepared by the invention can well block the edge wrapping plating of phosphorus diffusion on the back side, so that the pn junction on the front side is not damaged; when cleaning and wrapping the poly-Si, the prepared mask layer can protect the boron diffusion layer on the front side from being damaged.
  • the plated poly-Si can be cleaned in an alkaline or acidic environment; the removal method of the mask layer is simple, and it can be removed in a low-concentration HF solution without residue, and has no effect on electrical properties.
  • the raw materials of the present invention are non-toxic, environmentally friendly and easy to obtain.
  • the time for preparing the mask at high temperature by solution deposition of the present invention is short, which reduces the influence of multiple thermal processes on the performance of silicon wafers.
  • the presence of the mask layer of the present invention can protect the front PN junction from being damaged when using an alkaline solution to remove the back BSG.
  • the present invention has a simple cleaning method after the blocking poly-Si wrapping around plating.
  • a preparation method of a TOPCon battery comprising the following steps:
  • the solution deposition adopts spin coating, spray coating or roller coating, the deposited solution is silica sol, and the deposited thickness is 1-100 ⁇ m;
  • the high temperature curing is carried out in a chain furnace or a tube furnace, the atmosphere is nitrogen, oxygen or nitrogen-oxygen mixture, the temperature is 200-700°C, and the time is 10-200s;
  • the prepared mask layers are SiOx layer, SiNx layer, SiC layer; (SiOx can be SiO, SiO 2 , Si 2 O 3 , Si 3 O 4 , SiNx can be Si 3 N 4 , Si 2.5 N 3 )
  • the etching solution is 5wt%-15wt% HF/HNO 3 mixed solution
  • the immersion time is 30-500s
  • the backside mask wrapping layer is removed;
  • a tunnel oxide layer and a polysilicon layer are grown on the backside of the silicon wafer;
  • the etching solution is selected from one or more of KOH, NaOH and TMAH;
  • the cleaning solution used for cleaning and removing the mask layer is 1wt%-10wt% HF solution, and the cleaning time is 3-8min;
  • a preparation method of a TOPCon battery comprising the following steps:
  • the solution deposition adopts spin coating, spray coating or roller coating, the deposited solution is aluminum sol, and the deposited thickness is 1-100 ⁇ m;
  • High temperature curing is carried out in a chain furnace or a tube furnace, the atmosphere is oxygen or nitrogen-oxygen mixture, the temperature is 200-700°C, and the time is 10-200s;
  • the prepared mask layer is an Al 2 O 3 layer
  • the etching solution is KOH solution of 5wt% to 15wt%
  • the immersion time is 30 to 500s
  • the backside mask wrapping layer is removed;
  • a tunnel oxide layer and a polysilicon layer are grown on the backside of the silicon wafer;
  • the etching solution is selected from one or more of KOH, NaOH and TMAH;
  • the cleaning solution used for cleaning and removing the mask layer is 1wt%-10wt% KOH solution, and the cleaning time is 3-8min;

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Photovoltaic Devices (AREA)

Abstract

The present invention discloses a preparation method for a TOPCon battery, comprising: preparing a mask layer on the front surface of a silicon wafer, the mask layer being used for blocking poly-Si winding plating. The specific steps of preparing the mask layer on the front surface of the silicon wafer comprise solution deposition and high-temperature curing. The solution deposition uses spin coating, spray coating or roll coating, the deposited solution is silica sol or alumina sol, and the prepared mask layer is a SiOx layer, a SiNx layer, a SiC layer, or an Al2O3 layer. The mask layer prepared in the present invention can well block the edge winding plating of back phosphorus diffusion, so that the front pn junction is not damaged. When the winding-plated poly-Si is cleaned, the prepared mask layer can protect the front boron diffusion layer from being damaged, and the winding-plated poly-Si can be completely removed in an alkaline or acidic environment. The mask layer is simple to remove, can be removed under the condition of a low-concentration HF solution without residue, and has no impact on electrical properties.

Description

TOPCon电池的制备方法Preparation method of TOPCon battery 技术领域technical field
本发明涉及TOPCon电池的制备方法。The present invention relates to a preparation method of a TOPCon battery.
背景技术Background technique
TOPCon（Tunnel Oxide Passivated Contact）技术是在电池背面制备一层超薄的隧穿氧化层和一层高掺杂的非晶硅薄层，可以实现载流子的选择性通过，阻挡少子空穴复合。同时氧化层的化学钝化和高掺杂多晶硅的场致钝化效果可进一步提高电池开路电压和短路电流，电池转换效率有较大的提升空间。TOPCon (Tunnel Oxide Passivated Contact) technology is to prepare an ultra-thin tunnel oxide layer and a highly doped amorphous silicon thin layer on the back of the battery, which can realize the selective passage of carriers and block the recombination of minority carriers and holes. . At the same time, the chemical passivation of the oxide layer and the field-induced passivation effect of the highly doped polysilicon can further improve the open-circuit voltage and short-circuit current of the battery, and the conversion efficiency of the battery has a large room for improvement.
现有TOPCon结构电池的背面隧穿层及非晶硅主要通过化学气相沉积法制备，制作过程中会产生严重绕镀。现有技术主要是通过清洗或采用特殊材料（如SiC、SiNx等）做掩膜层来解决绕镀问题，但由于绕镀的poly-Si层分布不均匀，中间薄两边厚，清洗过程中易出现边缘清洗不干净或中间p+损伤的问题，导致电池效率、良率偏低，而采用的特殊材料掩膜层，多在管式炉中采用化学气相沉积CVD法制备或原子层沉积ALD方法制备。如目前使用较多的CVD制备的SiNx膜层作为掩膜，原料采用特种气体SiH 4，在管式炉中反应时间长，制备的SiNx膜层在HF槽中需10min以上的反应时间才能去除。若采用CVD法制备SiOx掩膜，需要10min以上的高温时间的才能达到阻挡poly-Si的作用。而采用ALD法制备掩膜层，设备投入较大，且ALD法制备的膜层在HF槽中需20min以上的反应时间才能完全去除。 The backside tunneling layer and amorphous silicon of the existing TOPCon structure cells are mainly prepared by chemical vapor deposition method, and serious wrapping occurs during the production process. The existing technology mainly solves the problem of wrapping plating by cleaning or using special materials (such as SiC, SiNx, etc.) as a mask layer. There are problems of unclean edge cleaning or intermediate p+ damage, resulting in low cell efficiency and yield, and the special material mask layer used is mostly prepared by chemical vapor deposition CVD method or atomic layer deposition ALD method in a tube furnace. . For example, many SiNx films prepared by CVD are currently used as masks, and the raw material is special gas SiH 4 . The reaction time in the tube furnace is long, and the prepared SiNx film needs more than 10min in the HF tank. The reaction time can be removed. If the CVD method is used to prepare the SiOx mask, a high temperature time of more than 10 minutes is required to achieve the effect of blocking poly-Si. However, using the ALD method to prepare the mask layer requires a large investment in equipment, and the film layer prepared by the ALD method needs more than 20 minutes of reaction time in the HF tank to be completely removed.
有鉴于此，为解决TOPCon制备过程中poly-Si绕镀问题，研究如何在更安全、环保、高效的前提下制备掩膜层十分重要。In view of this, in order to solve the problem of poly-Si wrapping during the preparation of TOPCon, it is very important to study how to prepare the mask layer under the premise of being safer, environmentally friendly and efficient.
技术解决方案technical solutions
为解决现有技术的缺陷，本发明提供一种TOPCon电池的制备方法，包括制备硅片正面掩膜层，该掩膜层用于阻挡poly-Si绕镀；In order to solve the defects of the prior art, the present invention provides a preparation method of a TOPCon battery, which includes preparing a silicon wafer front mask layer, and the mask layer is used to block poly-Si wrapping plating;
所述制备硅片正面掩膜层的具体步骤包括溶液沉积和高温固化；溶液沉积采用旋涂、喷涂或滚涂，沉积的溶液为硅溶胶或铝溶胶，制备的掩膜层为SiOx层、SiNx层、SiC层或Al 2O 3层。 The specific steps for preparing the silicon wafer front mask layer include solution deposition and high temperature curing; solution deposition adopts spin coating, spray coating or roller coating, the deposited solution is silica sol or aluminum sol, and the prepared mask layer is SiOx layer, SiNx layer, SiC layer or Al 2 O 3 layer.
优选的，所述沉积的厚度为1～100μm。Preferably, the thickness of the deposition is 1-100 μm.
优选的，所述高温固化在链式炉或管式炉中实施。Preferably, the high temperature curing is carried out in a chain furnace or a tube furnace.
优选的，所述高温固化的氛围为氮气、氧气或氮氧混合气。Preferably, the high temperature curing atmosphere is nitrogen, oxygen or nitrogen-oxygen mixture.
优选的，所述高温固化的温度为200～700℃。Preferably, the high temperature curing temperature is 200-700°C.
优选的，所述高温固化的时间为10～200s。Preferably, the high temperature curing time is 10-200s.
优选的，上述TOPCon电池的制备方法，还包括清洗去除掩膜层，且清洗去除掩膜层在去除poly-Si绕镀之后实施；所述清洗去除掩膜层采用的清洗溶液为1wt%～10wt%的HF或1wt%～10wt%的KOH溶液。Preferably, the above-mentioned preparation method of the TOPCon battery further includes cleaning and removing the mask layer, and cleaning and removing the mask layer is performed after removing the poly-Si wrapping; the cleaning solution used for cleaning and removing the mask layer is 1wt%～10wt% % HF or 1wt%～10wt% KOH solution.
优选的，所述清洗去除掩膜层的清洗时间为3～8min。Preferably, the cleaning time for cleaning and removing the mask layer is 3-8 minutes.
优选的，上述TOPCon电池的制备方法，其具体步骤包括：Preferably, the preparation method of the above-mentioned TOPCon battery, its specific steps include:
1）硅片去损伤层后双面制绒；1) Double-sided texturing after removing the damaged layer of the silicon wafer;
2）硅片正面硼扩散（可叠加SE）；2) Boron diffusion on the front side of the silicon wafer (SE can be superimposed);
3）制备硅片正面掩膜层；3) Prepare the front mask layer of the silicon wafer;
4）硅片背面及边缘刻蚀；4) Etching the back and edge of the silicon wafer;
5）硅片背面生长隧穿氧化层及多晶硅层；5) A tunnel oxide layer and a polysilicon layer are grown on the backside of the silicon wafer;
6）多晶硅层磷掺杂退火形成重掺杂poly-Si；6) Phosphorus doping annealing of polysilicon layer forms heavily doped poly-Si;
7）溶液刻蚀去除poly-Si绕镀；7) Solution etching to remove poly-Si wrapping;
8）清洗去除掩膜层和清洗去除硼硅玻璃层；8) Cleaning to remove the mask layer and cleaning to remove the borosilicate glass layer;
9）正背面镀减反射层后印刷烧结制成TOPCon太阳能电池。9) The front and back sides are coated with anti-reflection layers and then printed and sintered to make TOPCon solar cells.
优选的，步骤4）中，刻蚀溶液采用5wt%～15wt%的HF/HNO 3混合溶液，或5wt%～15wt%的KOH溶液，浸没时间为30～500s，去除背面掩膜绕镀层；步骤7）中，刻蚀溶液选自KOH、NaOH、TMAH中的一种或几种。 Preferably, in step 4), the etching solution adopts a 5wt%-15wt% HF/HNO 3 mixed solution, or a 5wt%-15wt% KOH solution, the immersion time is 30-500s, and the backside mask wrapping layer is removed; step 7), the etching solution is selected from one or more of KOH, NaOH, and TMAH.
有益效果beneficial effect
针对现有技术制备掩膜层设备投入大、原料毒性较大、制备时间长、后期清洗较困难等问题，本发明提出溶液法制备掩膜层用于解决poly-Si绕镀的问题，避免了较大的设备投资，原料安全环保，无毒易获得，能在10～200s内快速获得稳定阻挡poly-Si的掩膜层，能在背面刻蚀除BSG的过程中保护正面PN结在酸性或碱性环境下不被破坏，后期清洗掩膜层只需在1wt%～10wt%的HF溶液或1wt%～10wt%的KOH溶液中浸泡3～8min即能去除干净，去除后对电性能无影响，满足现有TOPCon电池生产的需要。In view of the problems of large equipment investment, high toxicity of raw materials, long preparation time, and difficulty in post-cleaning in the prior art for preparing the mask layer, the present invention proposes a solution method to prepare the mask layer to solve the problem of poly-Si wrapping, avoiding the problem of poly-Si wrapping. Large equipment investment, safe and environmentally friendly raw materials, non-toxic and easy to obtain, can quickly obtain a mask layer that blocks poly-Si within 10 to 200s, and can protect the front PN junction in the process of etching and removing BSG on the back. It will not be damaged in an alkaline environment. After cleaning, the mask layer only needs to be immersed in a 1wt%-10wt% HF solution or a 1wt%-10wt% KOH solution for 3-8min to be removed. After removal, it has no effect on electrical properties. , to meet the needs of existing TOPCon battery production.
本发明制备的掩膜层能很好的阻挡背面磷扩散的边缘绕镀，使正面pn结不被破坏；在清洗绕镀poly-Si时，制备的掩膜层能保护正面硼扩散层不被破坏的同时使绕镀的poly-Si能在碱性或酸性环境下清除干净；掩膜层的去除方式简单，能在低浓度HF溶液条件下除去且无残留，对电性能无影响。The mask layer prepared by the invention can well block the edge wrapping plating of phosphorus diffusion on the back side, so that the pn junction on the front side is not damaged; when cleaning and wrapping the poly-Si, the prepared mask layer can protect the boron diffusion layer on the front side from being damaged. At the same time of destruction, the plated poly-Si can be cleaned in an alkaline or acidic environment; the removal method of the mask layer is simple, and it can be removed in a low-concentration HF solution without residue, and has no effect on electrical properties.
本发明还具有如下特点：The present invention also has the following characteristics:
1、本发明原料无毒、环保、易获得。1. The raw materials of the present invention are non-toxic, environmentally friendly and easy to obtain.
2、相较于化学气相沉积法或原子层沉积法制备的掩膜，本发明溶液沉积高温制备掩膜时间短，减少了多次热过程对硅片性能的影响。2. Compared with the mask prepared by chemical vapor deposition method or atomic layer deposition method, the time for preparing the mask at high temperature by solution deposition of the present invention is short, which reduces the influence of multiple thermal processes on the performance of silicon wafers.
3、在使用碱溶液去背面BSG时，本发明掩膜层的存在能保护正面PN结不被破坏。3. The presence of the mask layer of the present invention can protect the front PN junction from being damaged when using an alkaline solution to remove the back BSG.
4、本发明阻挡poly-Si绕镀后清除方式简单。4. The present invention has a simple cleaning method after the blocking poly-Si wrapping around plating.
本发明的最佳实施方式BEST MODE FOR CARRYING OUT THE INVENTION
下面结合实施例，对本发明的具体实施方式作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案，而不能以此来限制本发明的保护范围。The specific embodiments of the present invention will be further described below with reference to the examples. The following examples are only used to illustrate the technical solutions of the present invention more clearly, and cannot be used to limit the protection scope of the present invention.
实施例1Example 1
一种TOPCon电池的制备方法，包括如下步骤：A preparation method of a TOPCon battery, comprising the following steps:
1）硅片去损伤层后双面制绒；1) Double-sided texturing after removing the damaged layer of the silicon wafer;
2）硅片正面硼扩散（可叠加SE）；2) Boron diffusion on the front side of the silicon wafer (SE can be superimposed);
3）制备硅片正面掩膜层，具体步骤包括溶液沉积和高温固化；3) Prepare the front mask layer of the silicon wafer, the specific steps include solution deposition and high temperature curing;
溶液沉积采用旋涂、喷涂或滚涂，沉积的溶液为硅溶胶，沉积的厚度为1～100μm；The solution deposition adopts spin coating, spray coating or roller coating, the deposited solution is silica sol, and the deposited thickness is 1-100 μm;
高温固化在链式炉或管式炉中实施，氛围为氮气、氧气或氮氧混合气，温度为200～700℃，时间为10～200s；The high temperature curing is carried out in a chain furnace or a tube furnace, the atmosphere is nitrogen, oxygen or nitrogen-oxygen mixture, the temperature is 200-700°C, and the time is 10-200s;
制备的掩膜层为SiOx层、SiNx层、SiC层；（SiOx可以是SiO、SiO 2、Si 2O 3、Si 3O 4，SiNx可以是Si 3N 4，Si 2.5N 3） The prepared mask layers are SiOx layer, SiNx layer, SiC layer; (SiOx can be SiO, SiO 2 , Si 2 O 3 , Si 3 O 4 , SiNx can be Si 3 N 4 , Si 2.5 N 3 )
4）硅片背面及边缘刻蚀，刻蚀溶液采用5wt%～15wt%的HF/HNO 3混合溶液，浸没时间为30～500s，去除背面掩膜绕镀层； 4) The back and edge of the silicon wafer are etched, the etching solution is 5wt%-15wt% HF/HNO 3 mixed solution, the immersion time is 30-500s, and the backside mask wrapping layer is removed;
5）硅片背面生长隧穿氧化层及多晶硅层；5) A tunnel oxide layer and a polysilicon layer are grown on the backside of the silicon wafer;
6）多晶硅层磷掺杂退火形成重掺杂poly-Si；6) Phosphorus doping annealing of polysilicon layer forms heavily doped poly-Si;
7）溶液刻蚀去除poly-Si绕镀，刻蚀溶液选自KOH、NaOH、TMAH中的一种或几种；7) Solution etching to remove poly-Si wrapping, the etching solution is selected from one or more of KOH, NaOH and TMAH;
8）清洗去除掩膜层和清洗去除硼硅玻璃层；清洗去除掩膜层采用的清洗溶液为1wt%～10wt%的HF溶液，清洗时间为3～8min；8) cleaning and removing the mask layer and cleaning and removing the borosilicate glass layer; the cleaning solution used for cleaning and removing the mask layer is 1wt%-10wt% HF solution, and the cleaning time is 3-8min;
9）正背面镀减反射层后印刷烧结制成TOPCon太阳能电池。9) The front and back sides are coated with anti-reflection layers and then printed and sintered to make TOPCon solar cells.
实施例2Example 2
一种TOPCon电池的制备方法，包括如下步骤：A preparation method of a TOPCon battery, comprising the following steps:
1）硅片去损伤层后双面制绒；1) Double-sided texturing after removing the damaged layer of the silicon wafer;
2）硅片正面硼扩散（可叠加SE）；2) Boron diffusion on the front side of the silicon wafer (SE can be superimposed);
3）制备硅片正面掩膜层，具体步骤包括溶液沉积和高温固化；3) Prepare the front mask layer of the silicon wafer, the specific steps include solution deposition and high temperature curing;
溶液沉积采用旋涂、喷涂或滚涂，沉积的溶液为铝溶胶，沉积的厚度为1～100μm；The solution deposition adopts spin coating, spray coating or roller coating, the deposited solution is aluminum sol, and the deposited thickness is 1-100 μm;
高温固化在链式炉或管式炉中实施，氛围为氧气或氮氧混合气，温度为200～700℃，时间为10～200s；High temperature curing is carried out in a chain furnace or a tube furnace, the atmosphere is oxygen or nitrogen-oxygen mixture, the temperature is 200-700°C, and the time is 10-200s;
制备的掩膜层为Al 2O 3层； The prepared mask layer is an Al 2 O 3 layer;
4）硅片背面及边缘刻蚀，刻蚀溶液采用5wt%～15wt%的KOH溶液，浸没时间为30～500s，去除背面掩膜绕镀层；4) The back and edge of the silicon wafer are etched, the etching solution is KOH solution of 5wt% to 15wt%, the immersion time is 30 to 500s, and the backside mask wrapping layer is removed;
5）硅片背面生长隧穿氧化层及多晶硅层；5) A tunnel oxide layer and a polysilicon layer are grown on the backside of the silicon wafer;
6）多晶硅层磷掺杂退火形成重掺杂poly-Si；6) Phosphorus doping annealing of polysilicon layer forms heavily doped poly-Si;
7）溶液刻蚀去除poly-Si绕镀，刻蚀溶液选自KOH、NaOH、TMAH中的一种或几种；7) Solution etching to remove poly-Si wrapping, the etching solution is selected from one or more of KOH, NaOH and TMAH;
8）清洗去除掩膜层和清洗去除硼硅玻璃层；清洗去除掩膜层采用的清洗溶液为1wt%～10wt%的KOH溶液，清洗时间为3～8min；8) Cleaning and removing the mask layer and cleaning and removing the borosilicate glass layer; the cleaning solution used for cleaning and removing the mask layer is 1wt%-10wt% KOH solution, and the cleaning time is 3-8min;
9）正背面镀减反射层后印刷烧结制成TOPCon太阳能电池。9) The front and back sides are coated with anti-reflection layers and then printed and sintered to make TOPCon solar cells.
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。The above are only the preferred embodiments of the present invention. It should be pointed out that for those skilled in the art, without departing from the technical principles of the present invention, several improvements and modifications can be made. These improvements and modifications It should also be regarded as the protection scope of the present invention.

Claims (10)

  1. TOPCon电池的制备方法，包括制备硅片正面掩膜层，该掩膜层用于阻挡poly-Si绕镀；其特征在于：The preparation method of TOPCon battery includes preparing a silicon wafer front mask layer, and the mask layer is used for blocking poly-Si wrapping; it is characterized in that:
    所述制备硅片正面掩膜层的具体步骤包括溶液沉积和高温固化；溶液沉积采用旋涂、喷涂或滚涂，沉积的溶液为硅溶胶或铝溶胶，制备的掩膜层为SiOx层、SiNx层、SiC层或Al 2O 3层。 The specific steps for preparing the silicon wafer front mask layer include solution deposition and high temperature curing; solution deposition adopts spin coating, spray coating or roller coating, the deposited solution is silica sol or aluminum sol, and the prepared mask layer is SiOx layer, SiNx layer, SiC layer or Al 2 O 3 layer.
  2. 根据权利要求1所述的TOPCon电池的制备方法，其特征在于，所述沉积的厚度为1～100μm。The method for preparing a TOPCon battery according to claim 1, wherein the thickness of the deposition is 1-100 μm.
  3. 根据权利要求2所述的TOPCon电池的制备方法，其特征在于，所述高温固化在链式炉或管式炉中实施。The method for preparing a TOPCon battery according to claim 2, wherein the high temperature curing is performed in a chain furnace or a tube furnace.
  4. 根据权利要求3所述的TOPCon电池的制备方法，其特征在于，所述高温固化的氛围为氮气、氧气或氮氧混合气。The method for preparing a TOPCon battery according to claim 3, wherein the high-temperature curing atmosphere is nitrogen, oxygen or a mixture of nitrogen and oxygen.
  5. 根据权利要求4所述的TOPCon电池的制备方法，其特征在于，所述高温固化的温度为200～700℃。The method for preparing a TOPCon battery according to claim 4, wherein the temperature of the high-temperature curing is 200-700°C.
  6. 根据权利要求5所述的TOPCon电池的制备方法，其特征在于，所述高温固化的时间为10～200s。The method for preparing a TOPCon battery according to claim 5, wherein the high temperature curing time is 10-200s.
  7. 根据权利要求6所述的TOPCon电池的制备方法，其特征在于，还包括清洗去除掩膜层，且清洗去除掩膜层在去除poly-Si绕镀之后实施；所述清洗去除掩膜层采用的清洗溶液为1wt%～10wt%的HF或1wt%～10wt%的KOH溶液。The method for preparing a TOPCon battery according to claim 6, further comprising cleaning and removing the mask layer, and cleaning and removing the mask layer is performed after removing the poly-Si wrapping; The cleaning solution is 1wt%-10wt% HF or 1wt%-10wt% KOH solution.
  8. 根据权利要求7所述的TOPCon电池的制备方法，其特征在于，所述清洗去除掩膜层的清洗时间为3～8min。The method for preparing a TOPCon battery according to claim 7, wherein the cleaning time for cleaning and removing the mask layer is 3-8 minutes.
  9. 根据权利要求8所述的TOPCon电池的制备方法，其特征在于，其具体步骤包括：The preparation method of TOPCon battery according to claim 8, is characterized in that, its concrete steps comprise:
    1）硅片去损伤层后双面制绒；1) Double-sided texturing after removing the damaged layer of the silicon wafer;
    2）硅片正面硼扩散；2) Boron diffusion on the front side of the silicon wafer;
    3）制备硅片正面掩膜层；3) Prepare the front mask layer of the silicon wafer;
    4）硅片背面及边缘刻蚀；4) Etching the back and edge of the silicon wafer;
    5）硅片背面生长隧穿氧化层及多晶硅层；5) A tunnel oxide layer and a polysilicon layer are grown on the backside of the silicon wafer;
    6）多晶硅层磷掺杂退火形成重掺杂poly-Si；6) Phosphorus doping annealing of polysilicon layer forms heavily doped poly-Si;
    7）溶液刻蚀去除poly-Si绕镀；7) Solution etching to remove poly-Si wrapping;
    8）清洗去除掩膜层和清洗去除硼硅玻璃层；8) Cleaning to remove the mask layer and cleaning to remove the borosilicate glass layer;
    9）正背面镀减反射层后印刷烧结制成TOPCon太阳能电池。9) The front and back sides are coated with anti-reflection layers and then printed and sintered to make TOPCon solar cells.
  10. 根据权利要求9所述的TOPCon电池的制备方法，其特征在于，步骤4）中，刻蚀溶液采用5wt%～15wt%的HF/HNO 3混合溶液，或5wt%～15wt%的KOH溶液，浸没时间为30～500s，去除背面掩膜绕镀层；步骤7）中，刻蚀溶液选自KOH、NaOH、TMAH中的一种或几种。 The production method according to claim 9 TOPCon battery, wherein, in step 4), the etching solution employed 5wt% ~ 15wt% of the HF / HNO 3 mixed solution, or 5wt% ~ 15wt% of KOH solution, immersion The time is 30-500s, and the backside mask wrapping layer is removed; in step 7), the etching solution is selected from one or more of KOH, NaOH, and TMAH.
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