CN102122674B - Crystalline silicon solar cell and preparation method thereof - Google Patents

Crystalline silicon solar cell and preparation method thereof Download PDF

Info

Publication number
CN102122674B
CN102122674B CN2011100085716A CN201110008571A CN102122674B CN 102122674 B CN102122674 B CN 102122674B CN 2011100085716 A CN2011100085716 A CN 2011100085716A CN 201110008571 A CN201110008571 A CN 201110008571A CN 102122674 B CN102122674 B CN 102122674B
Authority
CN
China
Prior art keywords
layer
amorphous
type substrate
phosphorus
oxide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2011100085716A
Other languages
Chinese (zh)
Other versions
CN102122674A (en
Inventor
褚君浩
窦亚楠
何悦
王建禄
马晓光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Institute of Technical Physics of CAS
Original Assignee
Shanghai Institute of Technical Physics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Institute of Technical Physics of CAS filed Critical Shanghai Institute of Technical Physics of CAS
Priority to CN2011100085716A priority Critical patent/CN102122674B/en
Publication of CN102122674A publication Critical patent/CN102122674A/en
Application granted granted Critical
Publication of CN102122674B publication Critical patent/CN102122674B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a crystalline silicon solar cell and a preparation method thereof, and the crystalline silicon solar cell comprises a pn plus junction silicon substrate, wherein a first amorphous alumina layer and an amorphous silicon nitride layer are arranged on the surface of an n plus emitter, a silver electrode penetrates the amorphous silicon nitride layer and the first amorphous alumina layer and is connected with the n plus emitter, a composite passivation medium layer is arranged on the surface of a p type substrate, the p type substrate comprises a silicon oxide layer and a second amorphous alumina layer, and a p type substrate is in contact with a back electrode. The preparation method comprises the special preparation of the composite passivation medium layer, nitric acid and hydrogen peroxide solution are adopted for processing the surface of the p type substrate, the sol-gel process is adopted for preparing the second amorphous alumina layer, and the composite passivation medium layer (4) is formed after annealing. The crystalline silicon solar cell has the advantages of simple process, low equipment investment, good passivation and anti-reflection performances of the front surface, excellent passivation effect of the composite passivation medium layer on the back surface, capability of improving the utilization efficiency of long waves, and the like.

Description

A kind of crystal-silicon solar cell and preparation method thereof
Technical field
The present invention relates to a kind of crystal-silicon solar cell and preparation method thereof, specifically a kind of crystal-silicon solar cell with double-deck front surface passivated reflection reducing dielectric layer and back of the body surface recombination passivation dielectric layer and preparation method thereof.
Background technology
Present most commercialization crystal-silicon solar cell adopts screen printing technique, and technological process is simple, avoids widely applying vacuum equipment, is convenient to large-scale production.As shown in Figure 2, its basic procedure is: 1. remove silicon face damage, acid or alkali lye making herbs into wool and form anti-reflection structure and chemical cleaning; 2. at POCl 3Spread in the atmosphere and remove peripheral pn+ knot and phosphorosilicate glass; 3. adopt PECVD deposit SiNx:H antireflective film; 4. positive, the backplate of silk screen printing and back of the body surface field; 5. sintering forms ohmic contact.Although adopt the large-scale production of this technique energy, the front surface of this battery and the surperficial charge carrier of the back of the body are compound serious, and the back of the body is surperficial poor to infrared optical response, so that battery efficiency is lower.That laboratory crystalline silicon peak efficiency battery and other high efficiency batteries generally adopt is surperficial SiO 2Passivating technique, effectively passivated surface reduces the charge carrier recombination velocity.Yet SiO 2Passivation layer prepares, and generally adopts the thermal oxidation method of 900-1100 ℃ high temperature, and is serious on low-quality solar energy-level silicon wafer bluk recombination impact, and wants the photoetching technique of application of expensive, and complex process is unfavorable for industrialization large-scale production.Amorphous silicon nitride layer is done the passivation layer of front surface, also is antireflection layer simultaneously, owing to reason passivation and the antireflective effect of technique can not reach optimum effect simultaneously.Dual-layer silicon nitride film be in the situation that refractive index and thickness matching can effectively improve passivation and anti-reflective effect in theory, but because of the difficulty of refractive index less than 1.9 amorphous silicon nitride preparation, is difficult to reach the antireflecting effect of bilayer film in the practical application.The graded index silicon nitride film is difficult to realize because of technological problems equally.Amorphous silicon/amorphous silicon nitride duplicature can play good passivation effect, but with follow-up silk screen printing in arriving 800 ℃ high temperature and incompatible, because at high temperature easily crystallization of amorphous silicon is difficult to the passivation effect that reaches desirable after the crystallization.
Summary of the invention
The technical problem to be solved in the present invention is, uses simple technology and realizes having the effect of penetrating of two-layered medium layer passivated reflection reducing and have the crystal silicon solar energy battery of carrying on the back surface recombination dielectric layer thin film passivation, and preparation method thereof.
Crystal-silicon solar cell of the present invention as shown in Figure 1, this battery structure is: n+ emitter (301) surface in pn+ knot silicon base (3) has the first amorphous nickel/phosphorus/aluminium oxide layer (2) and amorphous silicon nitride layer (1) successively, silver electrode (6) is passed amorphous silicon nitride layer (1) and the first amorphous nickel/phosphorus/aluminium oxide layer (2) and n+ emitter (301) ohmic contact, there is composite passivated dielectric layer (4) on p-type substrate (302) surface, composite passivated dielectric layer (4) is comprised of silicon oxide layer (401) and the second amorphous nickel/phosphorus/aluminium oxide layer (402), and back electrode (5) passes composite passivated dielectric layer (4) and p-type substrate ohmic contact.
Described the first amorphous nickel/phosphorus/aluminium oxide layer (2) is to prepare on n+ emitter (301) by sol-gel process, and thickness 10-20nm plays passivation.
Described amorphous silicon nitride layer (1) is that employing conventional P ECVD deposit 60-100nm refractive index is the amorphous silicon nitride films of 1.9-2.5.
Described composite passivated dielectric layer (4) is the double-decker of silicon oxide layer (401) and the second amorphous nickel/phosphorus/aluminium oxide layer (402), play the effect of chemical passivation and a passivation, wherein silicon oxide layer (401) is that 1.5-3nm is thick, and the second amorphous nickel/phosphorus/aluminium oxide layer (402) is that 10-100nm is thick.
The preparation method of crystal silicon solar energy battery of the present invention adopts in traditional handicraft
Figure BSA00000419486100021
With
Figure BSA00000419486100022
The basis on increase new technology
Figure BSA00000419486100023
With
Figure BSA00000419486100024
Remove p-type silicon base surface damage, acid or alkali lye making herbs into wool and form anti-reflection structure and chemical cleaning;
Figure BSA00000419486100026
At POCl 3Spread and remove the pn+ knot silicon base (3) of peripheral pn knot and phosphorosilicate glass formation pn+ structure in the atmosphere;
Figure BSA00000419486100031
Adopt volume ratio HNO 3: H2O2=20-5: 1 mixed solution soaked p-type substrate (302) surface 30 minutes; HNO wherein 3Concentration is 68%, H 2O 2For concentration is 30%;
Figure BSA00000419486100032
Adopt the alumina sol of sol-gel process preparation, its step is as follows:
(a) under strong mixing, aluminium isopropoxide poured in the boiling water that contains part nitric acid be hydrolyzed, continue to stir; Temperature drops to 85-95 ℃ after 30 minutes;
(b) add red fuming nitric acid (RFNA) after 60 minutes, namely obtain the alumina sol clarified, naturally cooling;
Figure BSA00000419486100033
The n+ emitter (301) of the pn+ knot silicon base (3) that obtains in step 3 and p-type substrate (302) surface employing czochralski method or spin-coating method prepare aluminum oxide film, 400-600 ℃ of annealing is after 15-30 minute, the thickness of the first amorphous nickel/phosphorus/aluminium oxide layer (2) is 10-20nm, and the thickness of the second amorphous nickel/phosphorus/aluminium oxide layer (402) is 10-100nm;
Figure BSA00000419486100034
Adopting conventional P ECVD deposit 60-100nm refractive index is the amorphous silicon nitride films formation amorphous silicon nitride layer (1) of 1.9-2.5;
Figure BSA00000419486100035
Silk screen printing front, backplate and back of the body surface field.With traditional handicraft slightly different be that the silver of printed back electrode and electric field slurry and aluminium paste figure adopt grid line structure, print first aluminium paste, rear printed silver slurry covering aluminium paste;
Figure BSA00000419486100036
Sintering makes silver electrode (6) and n+ emitter (301) and back electrode (5) form ohmic contact with p-type substrate (302).
The invention has the advantages that:
1 battery structure front surface the first amorphous nickel/phosphorus/aluminium oxide layer of the present invention is the passivation emitter surface preferably, by the refractive index of adjusting amorphous silicon nitride, but hydrogen content and thickness Effective Raise antireflective property;
2 the present invention have n+ emitter (301) surface passivation dielectric layer and compare with the traditional silk-screened battery with the battery of p-type substrate (302) surface recombination passivation dielectric layer, increase this double-layer structure, passivation cell is surperficial preferably, especially the back of the body of main flow P type crystal silicon solar energy battery is surperficial, composite passivated dielectric layer plays the double effects of chemical passivation and a passivation, passivation effect is good, reduces recombination losses, and strengthens the reflection efficiency raising long-wave response of infrared light.
3 the present invention adopt sol-gel process to prepare alumina sol, then at p-type substrate process HNO 3And H 2O 2N+ emitter (301) surface of the p-type silicon base (3) that mixed solution was processed and p-type substrate (302) surface preparation passivation dielectric layer amorphous nickel/phosphorus/aluminium oxide thin-film material, form composite passivated dielectric layer structure on p-type substrate (302) surface, preparation technology is simple, equipment investment is few, is easy to realize suitability for industrialized production.
Description of drawings
Fig. 1 the present invention has front surface passivated reflection reducing layer and back of the body surface recombination passivation dielectric layer crystal silicon solar energy battery structure.
Fig. 2 traditional silk-screened crystal-silicon solar cell fabrication processing figure, wherein:
A removes the damage of p-type silicon face, making herbs into wool, cleans;
Form the pn+ knot after the b diffusion;
C removes peripheral pn+ knot;
D PECVD deposited amorphous silicon nitride layer;
E silk screen printing tow sides and sintering form ohmic contact.
Fig. 3 the present invention has a kind of preparation technology's flow process of described structure solar cell, wherein:
A removes surface damage, making herbs into wool, cleans;
Form the pn+ knot after the b diffusion etching;
C p-type substrate surface is processed and is formed silicon oxide layer, and n+ emitter surface and p-type substrate surface prepare the amorphous nickel/phosphorus/aluminium oxide film;
D PECVD deposited amorphous silicon nitride layer;
E silk screen printing tow sides and sintering form ohmic contact.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.
Embodiment 1:
As shown in Figure 3, a kind of structure of crystal-silicon solar cell.Its preparation process is as follows:
1. remove p-type silicon base surface damage, acid or alkali lye making herbs into wool and form anti-reflection structure and chemical cleaning;
2. in the POCl3 atmosphere, spread and remove peripheral pn knot and phosphorosilicate glass formation pn+ structure by etching;
3. adopt volume ratio HNO3: H2O2=10: 1 mixed solution soaked the p-type substrate surface 30 minutes; Wherein HNO3 concentration is that 68%, H2O2 is that concentration is 30%;
4. adopt the silica sol of sol-gel process preparation, its step is as follows:
A pours aluminium isopropoxide in the boiling water that contains part nitric acid into and to be hydrolyzed under strong mixing, continues to stir; Temperature drops to 90 ℃ after 30 minutes.
B added red fuming nitric acid (RFNA) after 60 minutes, namely obtained the alumina sol clarified, naturally cooling;
5. the pn+ knot silicon base that obtains in step 3 adopts czochralski method to prepare front surface and back of the body surface alumina oxide film, and 500 ℃ of annealing are after 30 minutes, and n+ emitter surface amorphous nickel/phosphorus/aluminium oxide thickness is 15nm approximately, the composite passivated thickness of dielectric layers 17nm of p-type substrate surface;
6. adopting conventional P ECVD deposit 70nm refractive index at n+ emitter surface amorphous nickel/phosphorus/aluminium oxide layer is 2.33 amorphous silicon nitride films;
7. positive, the backplate of silk screen printing and back of the body surface field, silver slurry and the aluminium paste figure of printed back electrode and electric field adopt grid line structure, print first aluminium paste, rear printed silver slurry covering aluminium paste;
8. sintering makes silver electrode and n+ emitter and back electrode and p-type substrate formation ohmic contact.
Embodiment 2:
With embodiment 1, prepare the amorphous nickel/phosphorus/aluminium oxide layer except adopting spin-coating method, n+ emitter surface amorphous nickel/phosphorus/aluminium oxide film thickness is 10nm, the composite passivated dielectric layer film thickness of p-type substrate surface is 50nm.

Claims (2)

1. crystal-silicon solar cell, it is characterized in that: the structure of this battery is: on n+ emitter (301) surface of pn+ knot silicon base (3) thickness being arranged successively is the first amorphous nickel/phosphorus/aluminium oxide layer (2) of 10-20nm and the amorphous silicon nitride layer (1) that thickness is 60-100nm, silver electrode (6) is passed amorphous silicon nitride layer (1) and the first amorphous nickel/phosphorus/aluminium oxide layer (2) and n+ emitter (301) ohmic contact, there is composite passivated dielectric layer (4) on p-type substrate (302) surface, composite passivated dielectric layer (4) is that the silicon oxide layer (401) of 1.5-3nm and the second amorphous nickel/phosphorus/aluminium oxide layer (402) that thickness is 10-100nm form by thickness, and back electrode (5) passes composite passivated dielectric layer (4) and p-type substrate (302) ohmic contact.
2. crystal-silicon solar cell preparation method based on the described structure of claim 1 is characterized in that may further comprise the steps:
1). remove the damage of p-type silicon face, acid or alkali lye making herbs into wool and form anti-reflection structure and chemical cleaning;
2). at POCl 3Spread and remove the pn+ knot silicon base (3) of peripheral pn knot and phosphorosilicate glass formation pn+ structure in the atmosphere;
3). adopt volume ratio HNO 3: H 2O 2=10: 1 mixed solution soaked p-type substrate (302) surface 30 minutes; HNO wherein 3Concentration is 68%, H 2O 2For concentration is 30%;
4). adopt the alumina sol of sol-gel process preparation, its step is as follows:
(a) under strong mixing, aluminium isopropoxide poured in the boiling water that contains part nitric acid be hydrolyzed, continue to stir, temperature drops to 85-95 ℃ after 30 minutes;
(b) add red fuming nitric acid (RFNA) after 60 minutes, namely obtain the alumina sol clarified, naturally cooling;
5). the n+ emitter (301) of the pn+ knot silicon base (3) that obtains in step 3 and p-type substrate (302) surface employing czochralski method or spin-coating method prepare aluminum oxide film, 400-600 ℃ of annealing is after 15-30 minute, and generating thickness is the first amorphous nickel/phosphorus/aluminium oxide layer (2) of 10-20nm and the second amorphous nickel/phosphorus/aluminium oxide layer (402) that thickness is 10-100nm;
6). adopting conventional P ECVD deposit 60-100nm refractive index on the first amorphous nickel/phosphorus/aluminium oxide layer (2) surface is the amorphous silicon nitride films formation amorphous silicon nitride layer (1) of 1.9-2.5;
7). silk screen printing front, backplate and back of the body surface field, silver slurry and the aluminium paste figure of printed back electrode and electric field adopt grid line structure, print first aluminium paste, and rear printed silver slurry covers aluminium paste;
8). sintering makes silver electrode (6) and n+ emitter (301) and back electrode (5) form ohmic contact with p-type substrate (302).
CN2011100085716A 2011-01-14 2011-01-14 Crystalline silicon solar cell and preparation method thereof Active CN102122674B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011100085716A CN102122674B (en) 2011-01-14 2011-01-14 Crystalline silicon solar cell and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011100085716A CN102122674B (en) 2011-01-14 2011-01-14 Crystalline silicon solar cell and preparation method thereof

Publications (2)

Publication Number Publication Date
CN102122674A CN102122674A (en) 2011-07-13
CN102122674B true CN102122674B (en) 2013-01-09

Family

ID=44251185

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011100085716A Active CN102122674B (en) 2011-01-14 2011-01-14 Crystalline silicon solar cell and preparation method thereof

Country Status (1)

Country Link
CN (1) CN102122674B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2013103141A1 (en) * 2012-01-06 2015-05-11 日立化成株式会社 Semiconductor substrate with passivation film and method for producing the same, solar cell element and method for producing the same
CN103311348A (en) * 2012-03-08 2013-09-18 茂迪股份有限公司 Solar energy cell and manufacturing method thereof
KR101631450B1 (en) * 2013-03-05 2016-06-17 엘지전자 주식회사 Solar cell
CN103606568A (en) * 2013-11-21 2014-02-26 常州天合光能有限公司 Film passivation structure for crystalline silica solar cell
EP3381047A4 (en) * 2015-11-24 2019-07-03 Hitachi Chemical Co., Ltd. Fired multilayer stacks for use in integrated circuits and solar cells
CN106653872B (en) * 2016-11-25 2018-06-29 罗雷 A kind of solar cell of anti-PID effects
CN108054242A (en) * 2017-12-15 2018-05-18 浙江晶科能源有限公司 A kind of production method of N-type single side battery
CN111710730A (en) * 2020-06-29 2020-09-25 苏州腾晖光伏技术有限公司 Novel P-type crystalline silicon solar cell and preparation method thereof
CN111834492A (en) * 2020-07-22 2020-10-27 常州时创能源股份有限公司 Preparation method of TOPCon battery
CN114944434B (en) * 2022-05-25 2024-03-08 三一硅能(株洲)有限公司 Crystalline silicon solar cell, preparation method thereof and photovoltaic module

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101051657A (en) * 2006-04-05 2007-10-10 三星Sdi株式会社 Solar cell and its method of manufacture
CN101262029A (en) * 2007-03-07 2008-09-10 信越化学工业株式会社 Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4121928B2 (en) * 2003-10-08 2008-07-23 シャープ株式会社 Manufacturing method of solar cell

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101051657A (en) * 2006-04-05 2007-10-10 三星Sdi株式会社 Solar cell and its method of manufacture
CN101262029A (en) * 2007-03-07 2008-09-10 信越化学工业株式会社 Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell

Also Published As

Publication number Publication date
CN102122674A (en) 2011-07-13

Similar Documents

Publication Publication Date Title
CN102122674B (en) Crystalline silicon solar cell and preparation method thereof
CN102290473B (en) Back point contact crystalline silicon solar cell and preparation method thereof
CN103887347B (en) A kind of two-sided P-shaped crystalline silicon battery structure and preparation method thereof
CN102623517B (en) Back contact type crystalline silicon solar cell and production method thereof
CN103996746B (en) Manufacturing method for PERL crystalline silicon solar cell capable of being massively produced
CN102738304B (en) Method for manufacturing back electrode of crystalline silicon solar cell by using local aluminum back surface field structure
CN101976701B (en) Manufacturing method of back passivation cell
CN102064237A (en) Double-layer passivating method for crystalline silicon solar battery
CN101976710A (en) Method for preparing crystalline silicon hetero-junction solar cell based on hydrogenated microcrystalline silicon film
CN102403369A (en) Passivation dielectric film for solar cell
CN107068777A (en) A kind of local Al-BSF solar cell and preparation method thereof
CN104218123A (en) N-type IBC silicon solar cell manufacturing method based on ion implantation process
CN104934500A (en) Method for preparing back-surface passivation crystalline silicon solar cell with selective emitter
CN102593263A (en) Preparation method of N-type crystalline silicon back emitter junction solar battery and corrosive liquid
CN105226115A (en) A kind of N-type crystal silicon battery and preparation method thereof
CN102364691A (en) Crystalline silicon solar battery with upper/lower conversion luminescent structure and manufacturing method for crystalline silicon solar battery
CN111933750A (en) Preparation method of thermal oxidation alkali polishing SE-PERC solar cell
CN202307914U (en) Next-generation structure high-efficiency crystalline silicon battery
CN108987532A (en) A kind of preparation method of the N-type tunnel oxide passivating solar battery based on light scattering structure
CN206558515U (en) A kind of local Al-BSF solar cell
CN101882643A (en) Method for manufacturing crystalline silicon high-efficiency solar cell
CN202259320U (en) Backside point contact crystalline silicon solar cell
CN103050573B (en) A kind of preparation method carrying on the back passivation cell
CN104716209A (en) Solar cell based on silicon substrate nanowire and preparing method thereof
CN102176474A (en) N-type solar battery prepared by film masking process of one multi-purpose film and preparation method of N-type solar battery

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant