CN108054242A - A kind of production method of N-type single side battery - Google Patents
A kind of production method of N-type single side battery Download PDFInfo
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- CN108054242A CN108054242A CN201711346915.8A CN201711346915A CN108054242A CN 108054242 A CN108054242 A CN 108054242A CN 201711346915 A CN201711346915 A CN 201711346915A CN 108054242 A CN108054242 A CN 108054242A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000002161 passivation Methods 0.000 claims abstract description 45
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052709 silver Inorganic materials 0.000 claims abstract description 19
- 239000004332 silver Substances 0.000 claims abstract description 19
- 238000007650 screen-printing Methods 0.000 claims abstract description 4
- 238000009792 diffusion process Methods 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- 239000003513 alkali Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 235000008216 herbs Nutrition 0.000 claims description 6
- 210000002268 wool Anatomy 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 239000005388 borosilicate glass Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cell Separators (AREA)
Abstract
The invention discloses a kind of production method of N-type single side battery, including：One substrate is provided；P is formed in the front of the substrate+Layer；N is formed at the back side of the substrate+Layer；In the P+Layer sequentially forms the first passivation layer and the second passivation layer away from the one side of the substrate；In the N+Layer forms the 3rd passivation layer away from the one side of the substrate；Deviate from the N in the 3rd passivation layer+The one side of layer forms silver paste film layer by way of silk-screen printing.The production method makes light be reflected back inside battery again, and then adds the short circuit current flow of N-type single side battery by forming one layer of silver paste film layer at the back side of N-type cell.
Description
Technical field
The present invention relates to technical field of solar batteries, more specifically more particularly to a kind of making of N-type single side battery
Method.
Background technology
With the continuous development of science and technology, solar cell is widely used to daily life and industry
In, popular is p-type polycrystalline cell piece currently on the market, but its efficiency is not high, can not gradually meet the market demand.
, there is the production of N-type battery slice and application in industry-by-industry in the problem of in order to avoid p-type polycrystalline cell piece, but
It is that current N-type battery slice is N-type double-side cell, because there are shady faces to reflect the problem of few, causes the short circuit current flow of battery
It is smaller.
In order to solve the problem of that the few short circuit current flow of N-type double-side cell reflection is small, N-type single side battery applications and give birth to, still,
In the prior art, the production cost of N-type single side battery is very high, and production yield is low.
The content of the invention
To solve the above problems, the present invention provides a kind of production method of N-type single side battery, which effectively drops
The production cost of low N-type single side battery improves production yield.
To achieve the above object, the present invention provides following technical solution：
A kind of production method of N-type single side battery, the production method include：
One substrate is provided；
P is formed in the front of the substrate+Layer；
N is formed at the back side of the substrate+Layer；
In the P+Layer sequentially forms the first passivation layer and the second passivation layer away from the one side of the substrate；
In the N+Layer forms the 3rd passivation layer away from the one side of the substrate；
Deviate from the N in the 3rd passivation layer+The one side of layer forms silver paste film layer by way of silk-screen printing.
Preferably, in above-mentioned production method, the substrate is N-type substrate.
Preferably, it is described to form P in the front of the substrate in above-mentioned production method+Layer includes：
Alkali making herbs into wool processing is carried out to the front of the substrate；
After the completion of alkali making herbs into wool processing, boron diffusion is carried out in the front of the substrate, forms P+Layer；
Etching removes the pn-junction diffuseed to form on the substrate back by boron and the boron diffuseed to form on front by boron
Silica glass.
Preferably, in above-mentioned production method, the production method further includes：
Work as P+After layer is formed, in the P+Layer forms mask layer away from the one side of the substrate；
Wherein, the mask layer is SiON layers, and the thickness of the mask layer is 40nm-120nm, including endpoint value.
Preferably, it is described to form N at the back side of the substrate in above-mentioned production method+Layer includes：
After mask layer is formed, phosphorus diffusion is carried out at the back side of the substrate, forms N+Layer；
Etching removes the phosphorosilicate glass formed on the substrate back by phosphorus diffusion and the mask layer.
Preferably, in above-mentioned production method, first passivation layer is Al2O3Layer, and the thickness of first passivation layer
For 2nm-20nm, including endpoint value；Second passivation layer is SiN layer, and the thickness of second passivation layer is 60nm-
80nm, including endpoint value.
Preferably, in above-mentioned production method, the 3rd passivation layer is SiN layer, and the thickness of the 3rd passivation layer
For 60nm-100nm, including endpoint value.
Preferably, in above-mentioned production method, the P+The depth of layer is 0.3um-2um, including endpoint value.
Preferably, in above-mentioned production method, the N+The depth of layer is 0.2um-1um, including endpoint value.
Preferably, in above-mentioned production method, the thickness of silver paste film layer is 1um-3um, including endpoint value.
By foregoing description, a kind of production method of N-type single side battery provided by the invention includes：One lining is provided
Bottom；P is formed in the front of the substrate+Layer；N is formed at the back side of the substrate+Layer；In the P+Layer is away from the substrate
One side sequentially forms the first passivation layer and the second passivation layer；In the N+Layer forms the 3rd passivation away from the one side of the substrate
Layer；Deviate from the N in the 3rd passivation layer+The one side of layer forms silver paste film layer by way of printing.
It follows that the present invention makes light reflect telegram in reply again by forming one layer of silver paste film layer at the back side of N-type cell
Inside pond, and then add the short circuit current flow of N-type single side battery.
Description of the drawings
It in order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention, for those of ordinary skill in the art, without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of flow diagram of the production method of N-type single side battery provided in an embodiment of the present invention；
Fig. 2-Fig. 6 is a kind of corresponding technique stream of flow diagram of the production method for N-type single side battery that Fig. 1 is provided
Journey schematic diagram.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment belongs to the scope of protection of the invention.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
With reference to figure 1, Fig. 1 is a kind of flow diagram of the production method of N-type single side battery provided in an embodiment of the present invention.
The production method includes：
S101：One substrate is provided.
Specifically, the substrate is N-type silicon substrate.
S102：P is formed in the front of the substrate+Layer.
Specifically, as shown in Fig. 2, alkali making herbs into wool processing is carried out to the substrate 11 first, for obtaining the suede of pyramid shape
The light trapping effect of silicon chip has been improved in face 12, and after the completion of alkali making herbs into wool processing, boron diffusion is carried out in the front of the substrate 11, with
Form P+Layer 13, i.e. P-type layer, the P+PN junction is formed between layer 13 and N-type silicon substrate 11, and during boron is spread, meeting exists
P+Pyrex are additionally formed on layer 13 and can form pn-junction at the back side of silicon chip, it is therefore desirable to etching removal silicon chip back side
The Pyrex diffuseed to form in pn-junction and front by boron.
S103：N is formed at the back side of the substrate+Layer.
Specifically, as shown in figure 3, phosphorus diffusion is carried out at the back side of the substrate 11, to form N+Layer 14, i.e. N-type layer, and
It, can be in N and during phosphorus diffusion+Phosphorosilicate glass is additionally formed on layer 14, it is therefore desirable to which etching removes the substrate 11 and carries on the back
The phosphorosilicate glass formed on face by phosphorus diffusion.
S104：In the P+Layer sequentially forms the first passivation layer and the second passivation layer away from the one side of the substrate.
Specifically, as shown in figure 4, first passivation layer 15 is used to protect the P with second passivation layer 16+Layer 13
It avoids being influenced be subject to extraneous factor, to improve the reliability of the N-type single side battery.
S105：In the N+Layer forms the 3rd passivation layer away from the one side of the substrate.
Specifically, as shown in figure 5, the 3rd passivation layer 17 is used to protect the N+Layer 14 avoids being subject to extraneous factor
It influences, to improve the reliability of the N-type single side battery.
S106：Deviate from the N in the 3rd passivation layer+The one side of layer forms silver paste film by way of silk-screen printing
Layer.
Specifically, deviate from the N in the 3rd passivation layer 17+The one side of layer 14 forms silver paste film layer 18, and silver paste
Film layer 18 cannot cover the main gate line part of cell backside, and rest part all prints silver paste film layer 18, for making light weight
New reflection meeting inside battery, and then add the short circuit current flow of N-type single side battery.
It should be noted that silver paste film layer 18 is non-burn-through silver paste film layer in embodiments of the present invention, to prevent
The 3rd passivation layer 17 is burnt during only forming silver paste film layer.
Further, in embodiments of the present invention, the production method further includes：
Work as P+After layer is formed, in the P+Layer forms mask layer away from the one side of the substrate.
Wherein, the mask layer is SiON layers, and the thickness of the mask layer is 40nm-120nm, including endpoint value.
Specifically, as P in step S102+, it is necessary in the P after layer formation+Layer forms mask away from the one side of the substrate
Layer plays the protection P+The effect of layer, for avoiding forming the N in step s 103+The P is influenced during layer phosphorus diffusion+
Layer.
It should be noted that as the N+, it is necessary to etch the removal mask layer after layer is formed.
Also, in embodiments of the present invention, the material to the mask layer and be not construed as limiting, only by way of example into
Row explanation.
Further, first passivation layer 15 is Al2O3Layer, and the thickness of first passivation layer 15 is 2nm-20nm,
Thickness including endpoint value, such as first passivation layer 15 is 3nm or 15nm or 19nm.
Second passivation layer 16 is SiN layer, and the thickness of second passivation layer 16 is 60nm-80nm, including endpoint
Value, such as the thickness of second passivation layer 16 is 65nm or 70nm or 75nm.
Also, in embodiments of the present invention, to the material of first passivation layer 15 and second passivation layer 16 simultaneously
It is not construed as limiting, only illustrates by way of example.
Further, the P+The depth of layer 13 is 0.3um-2um, including endpoint value, for example, the P+The depth of layer 13
For 0.4um or 1um or 1.5um.
The N+The depth of layer 14 is 0.2um-1um, including endpoint value, for example, the N+The depth of layer 14 for 0.3um or
0.5um or 1um.
The thickness of silver paste film layer 18 is 1um-3um, including endpoint value, for example, the thickness of silver paste film layer 18
It spends for 1.5um or 2um or 2.5um.
By foregoing description, a kind of production method of N-type single side battery provided by the invention passes through in N-type cell
The back side forms one layer of silver paste film layer, and light is made to be reflected back inside battery again, and then adds the short circuit electricity of N-type single side battery
Stream, and silver paste film layer is formed by way of printing, the production cost of N-type single side battery is effectively reduced, it is good to improve production
Rate.
The foregoing description of the disclosed embodiments enables professional and technical personnel in the field to realize or use the present invention.
A variety of modifications of these embodiments will be apparent for those skilled in the art, it is as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and the principles and novel features disclosed herein phase one
The most wide scope caused.
Claims (10)
1. a kind of production method of N-type single side battery, which is characterized in that the production method includes：
One substrate is provided；
P is formed in the front of the substrate+Layer；
N is formed at the back side of the substrate+Layer；
In the P+Layer sequentially forms the first passivation layer and the second passivation layer away from the one side of the substrate；
In the N+Layer forms the 3rd passivation layer away from the one side of the substrate；
Deviate from the N in the 3rd passivation layer+The one side of layer forms silver paste film layer by way of silk-screen printing.
2. production method according to claim 1, which is characterized in that the substrate is N-type substrate.
3. production method according to claim 1, which is characterized in that described to form P in the front of the substrate+Layer includes：
Alkali making herbs into wool processing is carried out to the front of the substrate；
After the completion of alkali making herbs into wool processing, boron diffusion is carried out in the front of the substrate, forms P+Layer；
Etching removes the pn-junction diffuseed to form on the substrate back by boron and the borosilicate glass diffuseed to form on front by boron
Glass.
4. production method according to claim 1, which is characterized in that the production method further includes：
Work as P+After layer is formed, in the P+Layer forms mask layer away from the one side of the substrate；
Wherein, the mask layer is SiON layers, and the thickness of the mask layer is 40nm-120nm, including endpoint value.
5. production method according to claim 4, which is characterized in that described to form N at the back side of the substrate+Layer includes：
After mask layer is formed, phosphorus diffusion is carried out at the back side of the substrate, forms N+Layer；
Etching removes the phosphorosilicate glass formed on the substrate back by phosphorus diffusion and the mask layer.
6. production method according to claim 1, which is characterized in that first passivation layer is Al2O3Layer, and described the
The thickness of one passivation layer is 2nm-20nm, including endpoint value；Second passivation layer is SiN layer, and second passivation layer
Thickness is 60nm-80nm, including endpoint value.
7. production method according to claim 1, which is characterized in that the 3rd passivation layer is SiN layer, and the described 3rd
The thickness of passivation layer is 60nm-100nm, including endpoint value.
8. production method according to claim 1, which is characterized in that the P+The depth of layer is 0.3um-2um, including end
Point value.
9. production method according to claim 1, which is characterized in that the N+The depth of layer is 0.2um-1um, including end
Point value.
10. production method according to claim 1, which is characterized in that the thickness of silver paste film layer is 1um-3um,
Including endpoint value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711346915.8A CN108054242A (en) | 2017-12-15 | 2017-12-15 | A kind of production method of N-type single side battery |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711346915.8A CN108054242A (en) | 2017-12-15 | 2017-12-15 | A kind of production method of N-type single side battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108054242A true CN108054242A (en) | 2018-05-18 |
Family
ID=62133095
Family Applications (1)
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|---|---|---|---|
| CN201711346915.8A Pending CN108054242A (en) | 2017-12-15 | 2017-12-15 | A kind of production method of N-type single side battery |
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| Country | Link |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101853897A (en) * | 2010-03-31 | 2010-10-06 | 晶澳(扬州)太阳能光伏工程有限公司 | Method for preparing N-type crystalline silicon solar cell with aluminum-based local emitters on back side |
| CN102122674A (en) * | 2011-01-14 | 2011-07-13 | 中国科学院上海技术物理研究所 | Crystalline silicon solar cell and preparation method thereof |
| CN104966761A (en) * | 2015-07-08 | 2015-10-07 | 四川银河星源科技有限公司 | Manufacturing method of crystalline silicon solar cell |
-
2017
- 2017-12-15 CN CN201711346915.8A patent/CN108054242A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101853897A (en) * | 2010-03-31 | 2010-10-06 | 晶澳(扬州)太阳能光伏工程有限公司 | Method for preparing N-type crystalline silicon solar cell with aluminum-based local emitters on back side |
| CN102122674A (en) * | 2011-01-14 | 2011-07-13 | 中国科学院上海技术物理研究所 | Crystalline silicon solar cell and preparation method thereof |
| CN104966761A (en) * | 2015-07-08 | 2015-10-07 | 四川银河星源科技有限公司 | Manufacturing method of crystalline silicon solar cell |
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