CN102789970A - Preparation method for fast recovery diode chip - Google Patents
Preparation method for fast recovery diode chip Download PDFInfo
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- CN102789970A CN102789970A CN2012103082485A CN201210308248A CN102789970A CN 102789970 A CN102789970 A CN 102789970A CN 2012103082485 A CN2012103082485 A CN 2012103082485A CN 201210308248 A CN201210308248 A CN 201210308248A CN 102789970 A CN102789970 A CN 102789970A
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- diffusion
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- recovery diode
- diode chip
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Abstract
The invention discloses a preparation method for a fast recovery diode chip, relating to the field of manufacturing technology of semiconductor devices. The preparation method comprises the following process steps: cleaning a silicon chip, oxidizing, diffusing for the first time, cleaning for the second time, diffusing for the second time, cleaning for the third time, diffusing for the third time, oxidizing, introducing impurities into a recombination center of a semiconductor on the backside, photo-etching for the first time, forming a mesa, glass-passivating, photo-etching for the second time, coating a film on the front side, photo-etching for the third time, coating a film on the backside, and finally dividing into independent chips. According to the product disclosed by the invention, the breakdown voltage can be adjusted as required by a user; and the product has a large backward recovery softness factor and a short backward recovery time.
Description
Technical field
The present invention relates to a kind of manufacturing approach of semiconductor device, particularly the fast recovery diode chip production method.
Background technology
Advanced technology is to adopt the N-type single-sided polishing sheet of certain resistivity in the current fast recovery diode chip manufacturing; Back side diffusion N++ N-type semiconductor N impurity; The method of positive diffusion P type semiconductor impurity prepares; Its processing step is: composite impurities center, cutting, glassivation, lithography fair lead, plated film, photoetching metal film and alloy, back side coating film, scribing are introduced in cleaning, back side diffusion, positive diffusion, the back side; The weak point of this method is: the reverse recovery characteristic of product is poor, and it is little oppositely to recover softness.For a long time, in field of manufacturing semiconductor devices, people have made unremitting effort at aspects such as structural design, process modification, performance optimization, cost reduction, reliabilities.
Summary of the invention
The purpose of this invention is to provide and lack, oppositely recover softness factor fast recovery diode chip production method big, the reliable novel structure of steady quality a kind of reverse recovery time.
Technical scheme provided by the invention is: adopt the single-sided polishing N-type monocrystalline silicon of clean certain resistivity to process through following processing step:
1) once diffusion: accomplish the diffusion of N+ N-type semiconductor N impurity at the back side of said N-type monocrystalline silicon, form the N-/N+ structure;
2) secondary diffusion: the diffusion at N-/N+ structure silicon chip back completion N++ N-type semiconductor N impurity forms the N-/N+/N++ structure;
3) in the diffusion of the front of N-/N+/N++ completion P type semiconductor impurity, form the P/N-/N+/N++ structure;
4) introduce semiconductor complex centre impurity at the P/N-/N+/N++ back side;
5) at the positive photoetching mesa recess window of P/N-/N+/N++ structure silicon chip, and the table top moulding, glassivation;
6) the lithography fair lead window in the front of P/N-/N+/N++ structure silicon chip, and plated film;
7) at the positive photoetching metal film of P/N-/N+/N++ structure silicon chip;
8) at P/N-/N+/N++ structure silicon chip back plated film;
9) P/N-/N+/N++ structure silicon chip is divided into independently chip.
The present invention has improved the reverse recovery characteristic of product through the process of twice phosphorous diffusion and a boron diffusion, and reduce the reverse recovery time of product, oppositely recovers softness and improve greatly, satisfied user's demand, enlarged the scope of application of product.
The resistivity of the above-mentioned N-type of the present invention single crystal silicon material is 15～60 Ω .cm.N+, N++ N-type semiconductor N impurity are phosphorus, and twice diffusion all is to accomplish in silicon chip back, and P type semiconductor impurity is boron, accomplish diffusion in the front of silicon chip.The present invention has increased a N++ diffusion, has increased the reverse recovery softness factor of product, has improved the reverse recovery characteristic of product.
When spreading for the first time, with the positive SiO that adopts of silicon chip
2Protection, SiO is removed at the back side
2, carry out phosphorus prediffusion earlier, carry out phosphorus again and spread again.
The temperature and time of said prediffusion is 950 ± 5 ℃, 60 ± 2 minutes; Said diffusion again is under 1240 ± 5 ℃ temperature conditions, at O
2Diffusion is 2 hours in the atmosphere, again at N
2Spread in the atmosphere 8～13 hours.Can reach suitable phosphorus impurities distribution square and profound.
When spreading for the second time, carry out phosphorus prediffusion earlier, carry out phosphorus again and spread again.
The temperature and time of said prediffusion is 1175 ± 5 ℃, 240 ± 5 minutes; Said diffusion again is under 1240 ± 5 ℃ temperature conditions, at O
2Diffusion is 2 hours in the atmosphere, again at N
2Spread in the atmosphere 2～3 hours.Can reach suitable phosphorus impurities distribution square and profound.
When spreading for the third time, adopt boron to carry out prediffusion earlier, adopt boron to spread again again.
The temperature and time of said prediffusion is 920 ± 5 ℃, 60 ± 2 minutes; Said diffusion again is under 1200 ± 5 ℃ of temperature conditions, at O
2Diffusion is 2 hours in the atmosphere, again at N
2Spread in the atmosphere 8～18 hours.Can reach suitable boron impurity distribution square and profound.
Description of drawings
Fig. 1 is the structural representation of product of the present invention.
Fig. 2 is the structural representation of conventional products.
Among Fig. 1, Fig. 2,1 is SiO
2, 2 is that plated film district, 3 is that plated film district, 4 is the glassivation district.
Embodiment
Choosing resistivity is the N-type silicon materials single-sided polishing sheet of 15～60 Ω .cm, and the step of carrying out the fast recovery diode chip production is following.
1, silicon chip cleans: successively adopt electronics cleaning fluid (NH
4OH:H
2O
2: H
2The volume ratio of O is 1:2:5) and electronics cleaning fluid (HCL:H
2O
2: H
2The volume ratio of O is 1:2:6) to clean, the temperature of cleaning fluid is 85 ± 5 ℃, scavenging period 10 minutes.Use deionized water (resistivity is greater than 14M Ω .cm) flushing 30 minutes again, dry.
2, oxidation: with the O of silicon chip at 1150 ± 5 ℃
2Oxidation is 15～20 hours in the atmosphere.
3, front protecting:, clean with deionized water rinsing with the oxide layer at the HF solution removal silicon chip back side.Carry out cleaning silicon chip again, method is with step 1.
4, diffusion for the first time: carry out phosphorus prediffusion and diffusion again, prediffusion 950 ± 5 ℃, 1 hour, and then under 1240 ± 5 ℃ temperature conditions, at O
2Diffusion is 2 hours in the atmosphere, again at N
2Spread in the atmosphere 8～13 hours, and, formed the N-/N+ structure, take off silicon chip to reach suitable Impurity Distribution.
5, clean: the SiO that floats the surperficial phosphorosilicate glass and the silicon chip back side with HF solution
2, deionized water rinsing is clean.Carry out cleaning silicon chip again, method is with step 1.
6, diffusion for the second time: carry out phosphorus prediffusion and spread again, 1175 ± 5 ℃ of prediffusion 4 hours, and then under 1240 ± 5 ℃ temperature conditions, at O
2Diffusion is 2 hours in the atmosphere, again at N
2Spread in the atmosphere 2～3 hours, and, formed the N-/N+/N++ structure, take off silicon chip to reach suitable Impurity Distribution.
7, clean: with the oxide layer at the positive back side of HF solution removal silicon chip, deionized water rinsing is clean.Carry out cleaning silicon chip again, method is with step 1.
8, diffusion for the third time: carry out boron prediffusion and spread again, 920 ± 5 ℃ of prediffusion 1 hour, and then under 1200 ± 5 ℃ of temperature conditions, at O
2Diffusion is 2 hours in the atmosphere, again at N
2Spread in the atmosphere 8～18 hours, and, formed the P/N-/N+/N++ structure, take off silicon chip to reach suitable Impurity Distribution.
9, oxidation: at 1150 ± 5 ℃ O
2Oxidation is 15～20 hours in the atmosphere.
10, semiconductor complex centre impurity is introduced at the silicon chip back side.
11, the silicon chip tow sides are coated with 450 photoresists, and the horse of packing into is put into 90 ± 5 ℃ baking oven 30 ± 5 minutes, and made public, develops, and again sheet are placed in 150 ± 5 ℃ the baking oven 30 ± 5 minutes, use HF:NH
4F:H
2The O volume ratio is that the mixed solution of 3:6:10 is removed SiO in the window
2, and at HAC:HNO
3: HF:HNO
3Volume ratio is to carry out the table top moulding in the mixed solution of 1:0.2:1.25:0.5, carries out the PN junction glass passivation protection again.
12, be coated with 450 photoresists in the front of P/N-/N+/N++ structure silicon chip silicon chip, use HF:NH
4F:H
2The O volume ratio is that the mixed solution of 3:6:10 removes clean surperficial SiO
2, positive evaporation Al (aluminium), the silicon chip front is coated with 450 photoresists, removes unnecessary Al (aluminium), is convenient to electrode and draws.
13, at P/N-/N+/N++ structure silicon chip back plating TiNiAg film, increase ohmic contact, reduce thermal resistance.
14, P/N-/N+/N++ structure silicon chip is divided into independently chip.
So far, the present invention has processed the fast recovery diode chip.
Fast recovery diode is extraordinary semiconductor device, and important electrical characteristic parameter comprises reverse breakdown voltage, reverse recovery time and the softness factor.Through between N-and N++, increasing one deck N+ diffusion region,, reduce reverse recovery time to improve the reverse recovery softness factor of product.Choose suitable N-resistivity of material, to satisfy the requirement of user to different reverse breakdown voltages.
Claims (8)
1. fast recovery diode chip production method is characterized in that adopting clean single-sided polishing N-type monocrystalline silicon piece to process through following processing step:
1) once diffusion: accomplish the diffusion of N+ N-type semiconductor N impurity at the back side of said N-type monocrystalline silicon, form the N-/N+ structure;
2) secondary diffusion: the diffusion at N-/N+ structure silicon chip back completion N++ N-type semiconductor N impurity forms the N-/N+/N++ structure;
3) in the diffusion of the front of N-/N+/N++ completion P type semiconductor impurity, form the P/N-/N+/N++ structure;
4) introduce semiconductor complex centre impurity at the P/N-/N+/N++ back side;
5) at the positive photoetching mesa recess window of P/N-/N+/N++ structure silicon chip, and the table top moulding, glassivation;
6) the lithography fair lead window in the front of P/N-/N+/N++ structure silicon chip, and plated film;
7) at the positive photoetching metal film of P/N-/N+/N++ structure silicon chip;
8) at P/N-/N+/N++ structure silicon chip back plated film;
9) P/N-/N+/N++ structure silicon chip is divided into independently chip.
2. according to the said fast recovery diode chip production method of claim 1, when it is characterized in that once spreading, with the positive SiO that adopts of silicon chip
2Protection, SiO is removed at the back side
2, said being diffused as: carry out phosphorus prediffusion earlier, carry out phosphorus again and spread again.
3. according to the said fast recovery diode chip production method of claim 2, the temperature and time that it is characterized in that said prediffusion is 950 ± 5 ℃, 60 ± 2 minutes; Said diffusion again is under 1240 ± 5 ℃ temperature conditions, at O
2Diffusion is 2 hours in the atmosphere, again at N
2Spread in the atmosphere 8～13 hours.
4. according to the said fast recovery diode chip production method of claim 1, when it is characterized in that the secondary diffusion, carry out phosphorus prediffusion earlier, carry out phosphorus again and spread again.
5. according to the said fast recovery diode chip production method of claim 4, the temperature and time that it is characterized in that said prediffusion is 1175 ± 5 ℃, 240 ± 5 minutes; Said diffusion again is under 1240 ± 5 ℃ temperature conditions, at O
2Diffusion is 2 hours in the atmosphere, again at N
2Spread in the atmosphere 2～3 hours.
6. according to the said fast recovery diode chip production method of claim 1, when it is characterized in that triple diffusion, carry out boron prediffusion earlier, carry out boron again and spread again.
7. according to the said fast recovery diode chip production method of claim 1, the temperature and time that it is characterized in that said prediffusion is 920 ± 5 ℃, 60 ± 2 minutes; Said diffusion again is under 1200 ± 5 ℃ of temperature conditions, at O
2Diffusion is 2 hours in the atmosphere, again at N
2Spread in the atmosphere 8～18 hours.
8. according to the said fast recovery diode chip production method of claim 1, the resistivity that it is characterized in that said single-sided polishing N-type monocrystalline silicon is 15～60 Ω .cm.
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| CN2012103082485A CN102789970A (en) | 2012-08-28 | 2012-08-28 | Preparation method for fast recovery diode chip |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102983077A (en) * | 2012-12-06 | 2013-03-20 | 乐山嘉洋科技发展有限公司 | Diode chip manufacturing method |
| CN104867820A (en) * | 2015-04-16 | 2015-08-26 | 株洲南车时代电气股份有限公司 | Method for preparing high-concentration N-type shallow junction |
| CN106711232A (en) * | 2015-11-16 | 2017-05-24 | 上海联星电子有限公司 | Fast recovery diode (FRD) and manufacturing method thereof |
| CN109449212A (en) * | 2018-09-19 | 2019-03-08 | 四川上特科技有限公司 | A kind of naked envelope GPP rectifier diode chip and its manufacturing process |
| CN109755117A (en) * | 2017-11-01 | 2019-05-14 | 天津环鑫科技发展有限公司 | A method of FRGPP chip is made using printing technology |
| CN116031286A (en) * | 2023-03-24 | 2023-04-28 | 江西萨瑞微电子技术有限公司 | ESD semiconductor chip and preparation method thereof |
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| CN101110450A (en) * | 2007-07-26 | 2008-01-23 | 江苏宏微科技有限公司 | Extension type soft-recovery diode |
| CN101404254A (en) * | 2008-10-31 | 2009-04-08 | 杭州杭鑫电子工业有限公司 | Method for producing open PN junction fast-recovery rectifier diode by silicon mono-crystal sheet |
| CN101651102A (en) * | 2009-08-25 | 2010-02-17 | 南通明芯微电子有限公司 | Bidirectional trigger diode chip production method |
| CN102087976A (en) * | 2010-12-10 | 2011-06-08 | 天津中环半导体股份有限公司 | Fast recovery diode (FRD) chip and production process thereof |
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| US4816984A (en) * | 1987-02-06 | 1989-03-28 | Siemens Aktiengesellschaft | Bridge arm with transistors and recovery diodes |
| CN101110450A (en) * | 2007-07-26 | 2008-01-23 | 江苏宏微科技有限公司 | Extension type soft-recovery diode |
| CN101404254A (en) * | 2008-10-31 | 2009-04-08 | 杭州杭鑫电子工业有限公司 | Method for producing open PN junction fast-recovery rectifier diode by silicon mono-crystal sheet |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102983077A (en) * | 2012-12-06 | 2013-03-20 | 乐山嘉洋科技发展有限公司 | Diode chip manufacturing method |
| CN102983077B (en) * | 2012-12-06 | 2015-10-14 | 乐山嘉洋科技发展有限公司 | A kind of preparation method of diode chip for backlight unit |
| CN104867820A (en) * | 2015-04-16 | 2015-08-26 | 株洲南车时代电气股份有限公司 | Method for preparing high-concentration N-type shallow junction |
| CN106711232A (en) * | 2015-11-16 | 2017-05-24 | 上海联星电子有限公司 | Fast recovery diode (FRD) and manufacturing method thereof |
| CN109755117A (en) * | 2017-11-01 | 2019-05-14 | 天津环鑫科技发展有限公司 | A method of FRGPP chip is made using printing technology |
| CN109755117B (en) * | 2017-11-01 | 2023-05-23 | 天津环鑫科技发展有限公司 | Method for manufacturing FRGPP chip by adopting printing process |
| CN109449212A (en) * | 2018-09-19 | 2019-03-08 | 四川上特科技有限公司 | A kind of naked envelope GPP rectifier diode chip and its manufacturing process |
| CN116031286A (en) * | 2023-03-24 | 2023-04-28 | 江西萨瑞微电子技术有限公司 | ESD semiconductor chip and preparation method thereof |
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Application publication date: 20121121 |