CN102087976A - Fast recovery diode (FRD) chip and production process thereof - Google Patents
Fast recovery diode (FRD) chip and production process thereof Download PDFInfo
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- CN102087976A CN102087976A CN 201010581246 CN201010581246A CN102087976A CN 102087976 A CN102087976 A CN 102087976A CN 201010581246 CN201010581246 CN 201010581246 CN 201010581246 A CN201010581246 A CN 201010581246A CN 102087976 A CN102087976 A CN 102087976A
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- 229910052697 platinum Inorganic materials 0.000 claims abstract description 14
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- 229910052698 phosphorus Inorganic materials 0.000 claims description 11
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CN2010105812464A CN102087976B (en) | 2010-12-10 | 2010-12-10 | Fast recovery diode (FRD) chip and production process thereof |
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CN2010105812464A CN102087976B (en) | 2010-12-10 | 2010-12-10 | Fast recovery diode (FRD) chip and production process thereof |
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CN102087976A true CN102087976A (en) | 2011-06-08 |
CN102087976B CN102087976B (en) | 2012-07-04 |
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Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102569044A (en) * | 2011-12-24 | 2012-07-11 | 常州星海电子有限公司 | Manufacture method of diode SF chip |
CN102789970A (en) * | 2012-08-28 | 2012-11-21 | 南通明芯微电子有限公司 | Preparation method for fast recovery diode chip |
CN102800586A (en) * | 2012-08-28 | 2012-11-28 | 绍兴文理学院 | Design process for chip-type power diode |
CN102842501A (en) * | 2012-08-03 | 2012-12-26 | 中国电力科学研究院 | Manufacturing method of high-voltage quick-recovery diode |
CN103606522A (en) * | 2013-10-23 | 2014-02-26 | 蚌埠天宇机械工具有限公司 | GPP diode chip production process |
CN103745926A (en) * | 2013-12-18 | 2014-04-23 | 常州星海电子有限公司 | Low-voltage-drop high-reverse-voltage fast-recovery diode process control method |
CN104201102A (en) * | 2014-08-28 | 2014-12-10 | 苏州启澜功率电子有限公司 | Fast recovery diode FRD chip and production process for same |
CN104766790A (en) * | 2015-03-11 | 2015-07-08 | 苏州启澜功率电子有限公司 | Phosphorus and boron liquid source one-shot perfect diffusion process |
CN105977155A (en) * | 2016-07-01 | 2016-09-28 | 扬州虹扬科技发展有限公司 | Making process of fast recovery chip |
CN106571402A (en) * | 2016-11-18 | 2017-04-19 | 吉林瑞能半导体有限公司 | Fast recovery diode and manufacturing method thereof |
CN109755118A (en) * | 2017-11-01 | 2019-05-14 | 天津环鑫科技发展有限公司 | FRGPP chip glass passivation front multiple diffusion technology |
CN109755103A (en) * | 2017-11-01 | 2019-05-14 | 天津环鑫科技发展有限公司 | Method for reducing glass points of electrophoresis glass passivation process |
CN109755117A (en) * | 2017-11-01 | 2019-05-14 | 天津环鑫科技发展有限公司 | Method for manufacturing FRGPP chip by adopting printing process |
CN113178385A (en) * | 2021-03-31 | 2021-07-27 | 青岛惠科微电子有限公司 | Chip manufacturing method and device and chip |
CN113223953A (en) * | 2021-03-31 | 2021-08-06 | 青岛惠科微电子有限公司 | Manufacturing method and manufacturing equipment of fast recovery chip and fast recovery chip |
CN113223944A (en) * | 2021-03-31 | 2021-08-06 | 青岛惠科微电子有限公司 | Manufacturing method and manufacturing equipment of fast recovery chip and fast recovery chip |
CN114724936A (en) * | 2022-03-30 | 2022-07-08 | 青岛惠科微电子有限公司 | Preparation method of semiconductor device and semiconductor device |
Citations (5)
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US20050218430A1 (en) * | 2004-03-30 | 2005-10-06 | Ixys Corporation | Fast switching diode with low leakage current |
CN1710707A (en) * | 2005-05-11 | 2005-12-21 | 北京京仪椿树整流器有限责任公司 | High-power quick soft-restoring diode and mfg technology thereof |
CN101404254A (en) * | 2008-10-31 | 2009-04-08 | 杭州杭鑫电子工业有限公司 | Method for producing open PN junction fast-recovery rectifier diode by silicon mono-crystal sheet |
CN101504954A (en) * | 2009-03-02 | 2009-08-12 | 吉林华微电子股份有限公司 | High voltage power fast recovery diode and manufacturing method thereof |
CN101866855A (en) * | 2010-06-07 | 2010-10-20 | 北京时代民芯科技有限公司 | Method for preparing chip of high-voltage planar fast-recovery diode |
-
2010
- 2010-12-10 CN CN2010105812464A patent/CN102087976B/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050218430A1 (en) * | 2004-03-30 | 2005-10-06 | Ixys Corporation | Fast switching diode with low leakage current |
CN1710707A (en) * | 2005-05-11 | 2005-12-21 | 北京京仪椿树整流器有限责任公司 | High-power quick soft-restoring diode and mfg technology thereof |
CN101404254A (en) * | 2008-10-31 | 2009-04-08 | 杭州杭鑫电子工业有限公司 | Method for producing open PN junction fast-recovery rectifier diode by silicon mono-crystal sheet |
CN101504954A (en) * | 2009-03-02 | 2009-08-12 | 吉林华微电子股份有限公司 | High voltage power fast recovery diode and manufacturing method thereof |
CN101866855A (en) * | 2010-06-07 | 2010-10-20 | 北京时代民芯科技有限公司 | Method for preparing chip of high-voltage planar fast-recovery diode |
Cited By (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102569044A (en) * | 2011-12-24 | 2012-07-11 | 常州星海电子有限公司 | Manufacture method of diode SF chip |
CN102569044B (en) * | 2011-12-24 | 2014-07-30 | 常州星海电子有限公司 | Manufacture method of diode SF chip |
CN102842501B (en) * | 2012-08-03 | 2015-07-08 | 中国电力科学研究院 | Manufacturing method of high-voltage quick-recovery diode |
CN102842501A (en) * | 2012-08-03 | 2012-12-26 | 中国电力科学研究院 | Manufacturing method of high-voltage quick-recovery diode |
CN102789970A (en) * | 2012-08-28 | 2012-11-21 | 南通明芯微电子有限公司 | Preparation method for fast recovery diode chip |
CN102800586A (en) * | 2012-08-28 | 2012-11-28 | 绍兴文理学院 | Design process for chip-type power diode |
CN102800586B (en) * | 2012-08-28 | 2015-07-15 | 绍兴文理学院 | Design process for chip-type power diode |
CN103606522A (en) * | 2013-10-23 | 2014-02-26 | 蚌埠天宇机械工具有限公司 | GPP diode chip production process |
CN103745926B (en) * | 2013-12-18 | 2016-10-05 | 常州星海电子有限公司 | Low pressure drop high back-pressure fast recovery diode process control method |
CN103745926A (en) * | 2013-12-18 | 2014-04-23 | 常州星海电子有限公司 | Low-voltage-drop high-reverse-voltage fast-recovery diode process control method |
CN104201102A (en) * | 2014-08-28 | 2014-12-10 | 苏州启澜功率电子有限公司 | Fast recovery diode FRD chip and production process for same |
CN104201102B (en) * | 2014-08-28 | 2017-12-12 | 苏州启澜功率电子有限公司 | A kind of fast recovery diode FRD chips and its manufacture craft |
CN104766790A (en) * | 2015-03-11 | 2015-07-08 | 苏州启澜功率电子有限公司 | Phosphorus and boron liquid source one-shot perfect diffusion process |
CN105977155A (en) * | 2016-07-01 | 2016-09-28 | 扬州虹扬科技发展有限公司 | Making process of fast recovery chip |
CN105977155B (en) * | 2016-07-01 | 2020-03-20 | 扬州虹扬科技发展有限公司 | Manufacturing process of fast recovery chip |
CN106571402A (en) * | 2016-11-18 | 2017-04-19 | 吉林瑞能半导体有限公司 | Fast recovery diode and manufacturing method thereof |
CN106571402B (en) * | 2016-11-18 | 2024-03-29 | 吉林瑞能半导体有限公司 | Fast recovery power diode and manufacturing method thereof |
CN109755117A (en) * | 2017-11-01 | 2019-05-14 | 天津环鑫科技发展有限公司 | Method for manufacturing FRGPP chip by adopting printing process |
CN109755103A (en) * | 2017-11-01 | 2019-05-14 | 天津环鑫科技发展有限公司 | Method for reducing glass points of electrophoresis glass passivation process |
CN109755117B (en) * | 2017-11-01 | 2023-05-23 | 天津环鑫科技发展有限公司 | Method for manufacturing FRGPP chip by adopting printing process |
CN109755118B (en) * | 2017-11-01 | 2023-05-23 | 天津环鑫科技发展有限公司 | FRGPP chip glass-front multiple diffusion process |
CN109755118A (en) * | 2017-11-01 | 2019-05-14 | 天津环鑫科技发展有限公司 | FRGPP chip glass passivation front multiple diffusion technology |
CN113178385A (en) * | 2021-03-31 | 2021-07-27 | 青岛惠科微电子有限公司 | Chip manufacturing method and device and chip |
CN113223953A (en) * | 2021-03-31 | 2021-08-06 | 青岛惠科微电子有限公司 | Manufacturing method and manufacturing equipment of fast recovery chip and fast recovery chip |
CN113223944A (en) * | 2021-03-31 | 2021-08-06 | 青岛惠科微电子有限公司 | Manufacturing method and manufacturing equipment of fast recovery chip and fast recovery chip |
CN113178385B (en) * | 2021-03-31 | 2022-12-23 | 青岛惠科微电子有限公司 | Chip manufacturing method and device and chip |
CN114724936A (en) * | 2022-03-30 | 2022-07-08 | 青岛惠科微电子有限公司 | Preparation method of semiconductor device and semiconductor device |
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CN102087976B (en) | 2012-07-04 |
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Denomination of invention: Fast recovery diode (FRD) chip and production process thereof Effective date of registration: 20170105 Granted publication date: 20120704 Pledgee: Tianjin Zhonghuan Electric Information Group Co.,Ltd. Pledgor: TIANJIN ZHONGHUAN SEMICONDUCTOR CO.,LTD. Registration number: 2017120000003 |
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Date of cancellation: 20191220 Granted publication date: 20120704 Pledgee: Tianjin Zhonghuan Electric Information Group Co.,Ltd. Pledgor: TIANJIN ZHONGHUAN SEMICONDUCTOR CO.,LTD. Registration number: 2017120000003 |
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