CN102087976A - Fast recovery diode (FRD) chip and production process thereof - Google Patents

Fast recovery diode (FRD) chip and production process thereof Download PDF

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Publication number
CN102087976A
CN102087976A CN 201010581246 CN201010581246A CN102087976A CN 102087976 A CN102087976 A CN 102087976A CN 201010581246 CN201010581246 CN 201010581246 CN 201010581246 A CN201010581246 A CN 201010581246A CN 102087976 A CN102087976 A CN 102087976A
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diffusion
chip
silicon chip
improved
electrophoresis
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CN102087976B (en
Inventor
初亚东
刘长蔚
王军明
梁效峰
牛宝钢
薄勇
崔俊发
邵枫
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Tianjin Zhonghuan Semiconductor Joint Stock Co Ltd
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Tianjin Zhonghuan Semiconductor Joint Stock Co Ltd
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Abstract

The invention relates to a fast recovery diode (FRD) chip and a production process thereof. A diode with a P+NN+ structure is produced by adopting the process steps of diffusion pretreatment, double diffusion of a liquid source, back thinning, oxidization, platinum diffusion, photoetching, mesa etching, electrophoresis, sintering, scribing and the like. In the chip production process, a method of carrying out deep junction diffusion by carrying a liquid phosphorous source is adopted, so that the flatness of a diffusion junction is improved and the homogeneity and the stability of a breakdown voltage are strengthened; a method of reducing the concentration of a boron diffusion source and improving the purity of the boron diffusion source is adopted, so that the surge resistance capacity of an FRD is improved; and an electrophoresis glassivation process is adopted, so that the voltage withstanding stability and reliability of a bidirectional voltage stabilizing diode are improved. In addition, the production process has the advantages that the reverse recovery time is shortened, the switching speed is improved, the voltage drop is reduced, the power consumption is reduced, the voltage withstanding stability is improved, and the reliability of the diode is improved.

Description

A kind of fast recovery diode FRD chip and production technology thereof
Technical field
The present invention relates to crystal diode chip production technical field, particularly a kind of fast recovery diode (FRD) chip and production technology, carrying phosphorus liquid source diffusion, platinum diffusion, the blunt step of electrophoresis glass, to make structure be P +NN +The diode properties of product improve.
Background technology
Produce fast recovery diode (FRD) chip at present in the semicon industry and adopt twice diffusion in paper source production technology usually.Prior art existing problems 1), adopt the junction depth unevenness of paper source diffusion, cause puncture voltage stable inadequately, the antisurge ability.2), forward voltage drop is bigger, causes power consumption bigger, diode easily burns.
Summary of the invention
Purpose of the present invention is exactly for overcoming the deficiencies in the prior art, design a kind of fast recovery diode chip and production technology, this technology has improved the diode switch performance, reduced switching loss, reduced pressure drop, reduce power consumption, strengthened the withstand voltage stability and the reliability of diode, prolonged the life-span of diode.
The present invention realizes by such technical scheme: a kind of fast recovery diode (FRD) chip production technology is characterized in that comprising following steps in order:
1) diffusion pre-treatment:, silicon chip surface is carried out chemical treatment by operations such as acid, alkali, deionized water ultrasonic cleaning;
2) phosphorus source pre-deposition: carry and feed the liquid phosphorus source and carry out pre-deposition to handling clean silicon chip gas in 1100~1200 ℃ diffusion furnace;
3) phosphorus source main diffusion: the silicon chip behind the pre-deposition is spread propelling at 1200~1250 ℃ of diffusion furnaces;
4) diffusion reprocessing: with acid soak, deionized water ultrasonic cleaning, silicon chip is separated, and remove surface oxide layer;
5) thinning back side: use diamond dust the diffused junction N of one side +Grind off final thick 240~260 μ m that are retained in of sheet;
6) boron diffusion: the silicon chip behind the back of the body mill is cleaned up, and the diffusion furnace that adopts liquid boron source to put into 1200~1250 ℃ diffuses to form P +
7) sandblast: silicon chip surface is carried out uniform asperitiesization with diamond dust;
8) oxidation: the silicon chip of handling through super sand, electronic cleaning agent after the sandblast long layer of oxide layer in 1100~1200 ℃ oxidation furnace;
9) platinum diffusion: it is that 900~910 ℃ platinum diffusion furnace carries out the injection of metal platinum that the silicon chip after the cleaning is put into temperature;
10) photoetching: the silicon chip after the platinum diffusion is carried out operations such as gluing, exposure, development, deoxidation layer, carve the table top figure;
11) mesa etch: with nitration mixture etching table top groove, the nitration mixture temperature is controlled at 8~12 ℃, and washes down with deionized water;
12) electrophoresis: in the electrophoresis liquid that configures, the glass weight that need deposit according to the table top groove is provided with the time silicon slice placed, carries out electrophoresis;
13) sintering: the silicon chip behind the electrophoresis is carried out sintering in 800~820 ℃ sintering furnace;
14) deoxidation layer: with silicon chip surface oxide layer behind the hydrofluoric acid dips of diluting, the deionized water ultrasonic cleaning removal sintering;
15) nickel plating, gold-plated: the silicon chip behind the deoxidation layer is carried out nickel plating, gold-plated, dry in special-purpose coating bath;
16) chip cutting: the silicon chip after gold-plated is divided into single chip from the table top groove with scribing machine;
Obtaining its structure according to described method is P +NN +The type diode chip for backlight unit.
Fast recovery diode chip production technology of the present invention adopts the method for carrying the diffusion of liquid phosphorus depth of origin knot, has improved the flatness of diffused junction, has strengthened homogeneity, the stability of puncture voltage.Adopt the method that reduces boron diffusion source concentration, improves boron diffusion source purity, improved the antisurge ability of fast recovery diode.Adopt the glassivation technology of electrophoresis, improved the withstand voltage stability of bi-directional voltage stabilizing diode, reliability.Therefore this technology has improved the diode switch performance, has reduced switching loss, has reduced pressure drop, has reduced power consumption, has strengthened the withstand voltage stability and the reliability of diode, has prolonged the life-span of diode.
Description of drawings
The chip structure of Fig. 1 fast recovery diode FRD
Preparation technology's flow chart of Fig. 2 fast recovery diode FRD
Among the figure: 1 FRD chip, 2. table top groove, 3. glassy layer, 4. metal covering.
Embodiment
For a more clear understanding of the present invention, describe the present invention in conjunction with the accompanying drawings and embodiments in detail:
The chip structure of fast recovery diode FRD is " P as shown in Figure 1 +NN +Chip cuts layer and is followed successively by FRD chip 1, table top groove 2, glassy layer 3. metal coverings 4.
The chip technology flow process of fast recovery diode FRD is as follows as shown in Figure 2:
1) diffusion pre-treatment:, silicon chip surface is carried out chemical treatment by operations such as acid, alkali, deionized water ultrasonic cleaning.
2) phosphorus source pre-deposition: carry and feed the liquid phosphorus source and carry out pre-deposition to handling clean silicon chip gas in 1100~1200 ℃ diffusion furnace.
3) phosphorus source main diffusion: the silicon chip behind the pre-deposition is spread propelling at 1200~1250 ℃ of diffusion furnaces.
4) diffusion reprocessing: with acid soak, deionized water ultrasonic cleaning, silicon chip is separated, and remove surface oxide layer.
5) thinning back side: use diamond dust the diffused junction N of one side +Grind off final thick 240~260 μ m that are retained in of sheet.
6) boron diffusion: the silicon chip behind the back of the body mill is cleaned up, and the diffusion furnace that adopts liquid boron source to put into 1200~1250 ℃ diffuses to form P +
7) sandblast: silicon chip surface is carried out uniform asperitiesization with diamond dust.
8) oxidation: the silicon chip of handling through super sand, electronic cleaning agent after the sandblast long layer of oxide layer in 1100~1200 ℃ oxidation furnace.
9) platinum diffusion: it is that 900~910 ℃ platinum diffusion furnace carries out the injection of metal platinum that the silicon chip after the cleaning is put into temperature.
10) photoetching: the silicon chip after the platinum diffusion is carried out operations such as gluing, exposure, development, deoxidation layer, carve the table top figure.
11) mesa etch: with nitration mixture etching table top groove, the nitration mixture temperature is controlled at 8~12 ℃, and washes down with deionized water.
12) electrophoresis: in the electrophoresis liquid that configures, the glass weight that need deposit according to the table top groove is provided with the time silicon slice placed, carries out electrophoresis.
13) sintering: the silicon chip behind the electrophoresis is carried out sintering in 800~820 ℃ sintering furnace.
14) deoxidation layer: with silicon chip surface oxide layer behind the hydrofluoric acid dips of diluting, the deionized water ultrasonic cleaning removal sintering.
15) nickel plating, gold-plated: the silicon chip behind the deoxidation layer is carried out nickel plating, gold-plated, dry in special-purpose coating bath.
16) chip cutting: the silicon chip after gold-plated is divided into single chip from the table top groove with scribing machine.
17) chip testing: single chip is carried out electric parameters testing.
[0026]Parameter after the process modification:
Avalanche breakdown voltage VBO 〉=600V
Forward voltage V F(I F=8A)≤1.3V
Reverse leakage current I R10 μ A
Reverse recovery time Trr 50S
150 ℃ of junction temperature Tj
According to the above description, can realize the solution of the present invention in conjunction with art technology.

Claims (2)

1. fast recovery diode chip production technology is characterized in that comprising following steps in order:
1) diffusion pre-treatment:, silicon chip surface is carried out chemical treatment by operations such as acid, alkali, deionized water ultrasonic cleaning;
2) phosphorus source pre-deposition: carry and feed the liquid phosphorus source and carry out pre-deposition to handling clean silicon chip gas in 1100~1200 ℃ diffusion furnace;
3) phosphorus source main diffusion: the silicon chip behind the pre-deposition is spread propelling at 1200~1250 ℃ of diffusion furnaces;
4) diffusion reprocessing: with acid soak, deionized water ultrasonic cleaning, silicon chip is separated, and remove surface oxide layer;
5) thinning back side: use diamond dust the diffused junction N of one side +Grind off final thick 240~260 μ m that are retained in of sheet;
6) boron diffusion: the silicon chip behind the back of the body mill is cleaned up, and the diffusion furnace that adopts liquid boron source to put into 1200~1250 ℃ diffuses to form P +
7) sandblast: silicon chip surface is carried out uniform asperitiesization with diamond dust;
8) oxidation: the silicon chip of handling through super sand, electronic cleaning agent after the sandblast long layer of oxide layer in 1100~1200 ℃ oxidation furnace;
9) platinum diffusion: it is that 900~910 ℃ platinum diffusion furnace carries out the injection of metal platinum that the silicon chip after the cleaning is put into temperature;
10) photoetching: the silicon chip after the platinum diffusion is carried out operations such as gluing, exposure, development, deoxidation layer, carve the table top figure;
11) mesa etch: with nitration mixture etching table top groove, the nitration mixture temperature is controlled at 8~12 ℃, and washes down with deionized water;
12) electrophoresis: in the electrophoresis liquid that configures, the glass weight that need deposit according to the table top groove is provided with the time silicon slice placed, carries out electrophoresis;
13) sintering: the silicon chip behind the electrophoresis is carried out sintering in 800~820 ℃ sintering furnace;
14) deoxidation layer: with silicon chip surface oxide layer behind the hydrofluoric acid dips of diluting, the deionized water ultrasonic cleaning removal sintering;
15) nickel plating, gold-plated: the silicon chip behind the deoxidation layer is carried out nickel plating, gold-plated, dry in special-purpose coating bath;
16) chip cutting: the silicon chip after gold-plated is divided into single chip from the table top groove with scribing machine.
2. a fast recovery diode chip is characterized in that; Its structure is P +NN +Type, chip cut layer and are followed successively by FRD chip (1), table top groove (2), glassy layer (3), metal covering (4);
Chip parameter:
Avalanche breakdown voltage VBO 〉=600V;
Forward voltage V F(I F=8A)≤1.3V;
Reverse leakage current I R=10 μ A;
Reverse recovery time Trr=50S;
Junction temperature Tj=150 ℃.
CN2010105812464A 2010-12-10 2010-12-10 Fast recovery diode (FRD) chip and production process thereof Expired - Fee Related CN102087976B (en)

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Cited By (17)

* Cited by examiner, † Cited by third party
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CN102569044A (en) * 2011-12-24 2012-07-11 常州星海电子有限公司 Manufacture method of diode SF chip
CN102789970A (en) * 2012-08-28 2012-11-21 南通明芯微电子有限公司 Preparation method for fast recovery diode chip
CN102800586A (en) * 2012-08-28 2012-11-28 绍兴文理学院 Design process for chip-type power diode
CN102842501A (en) * 2012-08-03 2012-12-26 中国电力科学研究院 Manufacturing method of high-voltage quick-recovery diode
CN103606522A (en) * 2013-10-23 2014-02-26 蚌埠天宇机械工具有限公司 GPP diode chip production process
CN103745926A (en) * 2013-12-18 2014-04-23 常州星海电子有限公司 Low-voltage-drop high-reverse-voltage fast-recovery diode process control method
CN104201102A (en) * 2014-08-28 2014-12-10 苏州启澜功率电子有限公司 Fast recovery diode FRD chip and production process for same
CN104766790A (en) * 2015-03-11 2015-07-08 苏州启澜功率电子有限公司 Phosphorus and boron liquid source one-shot perfect diffusion process
CN105977155A (en) * 2016-07-01 2016-09-28 扬州虹扬科技发展有限公司 Making process of fast recovery chip
CN106571402A (en) * 2016-11-18 2017-04-19 吉林瑞能半导体有限公司 Fast recovery diode and manufacturing method thereof
CN109755118A (en) * 2017-11-01 2019-05-14 天津环鑫科技发展有限公司 FRGPP chip glass passivation front multiple diffusion technology
CN109755103A (en) * 2017-11-01 2019-05-14 天津环鑫科技发展有限公司 Method for reducing glass points of electrophoresis glass passivation process
CN109755117A (en) * 2017-11-01 2019-05-14 天津环鑫科技发展有限公司 Method for manufacturing FRGPP chip by adopting printing process
CN113178385A (en) * 2021-03-31 2021-07-27 青岛惠科微电子有限公司 Chip manufacturing method and device and chip
CN113223953A (en) * 2021-03-31 2021-08-06 青岛惠科微电子有限公司 Manufacturing method and manufacturing equipment of fast recovery chip and fast recovery chip
CN113223944A (en) * 2021-03-31 2021-08-06 青岛惠科微电子有限公司 Manufacturing method and manufacturing equipment of fast recovery chip and fast recovery chip
CN114724936A (en) * 2022-03-30 2022-07-08 青岛惠科微电子有限公司 Preparation method of semiconductor device and semiconductor device

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CN1710707A (en) * 2005-05-11 2005-12-21 北京京仪椿树整流器有限责任公司 High-power quick soft-restoring diode and mfg technology thereof
CN101404254A (en) * 2008-10-31 2009-04-08 杭州杭鑫电子工业有限公司 Method for producing open PN junction fast-recovery rectifier diode by silicon mono-crystal sheet
CN101504954A (en) * 2009-03-02 2009-08-12 吉林华微电子股份有限公司 High voltage power fast recovery diode and manufacturing method thereof
CN101866855A (en) * 2010-06-07 2010-10-20 北京时代民芯科技有限公司 Method for preparing chip of high-voltage planar fast-recovery diode

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Publication number Priority date Publication date Assignee Title
US20050218430A1 (en) * 2004-03-30 2005-10-06 Ixys Corporation Fast switching diode with low leakage current
CN1710707A (en) * 2005-05-11 2005-12-21 北京京仪椿树整流器有限责任公司 High-power quick soft-restoring diode and mfg technology thereof
CN101404254A (en) * 2008-10-31 2009-04-08 杭州杭鑫电子工业有限公司 Method for producing open PN junction fast-recovery rectifier diode by silicon mono-crystal sheet
CN101504954A (en) * 2009-03-02 2009-08-12 吉林华微电子股份有限公司 High voltage power fast recovery diode and manufacturing method thereof
CN101866855A (en) * 2010-06-07 2010-10-20 北京时代民芯科技有限公司 Method for preparing chip of high-voltage planar fast-recovery diode

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102569044A (en) * 2011-12-24 2012-07-11 常州星海电子有限公司 Manufacture method of diode SF chip
CN102569044B (en) * 2011-12-24 2014-07-30 常州星海电子有限公司 Manufacture method of diode SF chip
CN102842501B (en) * 2012-08-03 2015-07-08 中国电力科学研究院 Manufacturing method of high-voltage quick-recovery diode
CN102842501A (en) * 2012-08-03 2012-12-26 中国电力科学研究院 Manufacturing method of high-voltage quick-recovery diode
CN102789970A (en) * 2012-08-28 2012-11-21 南通明芯微电子有限公司 Preparation method for fast recovery diode chip
CN102800586A (en) * 2012-08-28 2012-11-28 绍兴文理学院 Design process for chip-type power diode
CN102800586B (en) * 2012-08-28 2015-07-15 绍兴文理学院 Design process for chip-type power diode
CN103606522A (en) * 2013-10-23 2014-02-26 蚌埠天宇机械工具有限公司 GPP diode chip production process
CN103745926B (en) * 2013-12-18 2016-10-05 常州星海电子有限公司 Low pressure drop high back-pressure fast recovery diode process control method
CN103745926A (en) * 2013-12-18 2014-04-23 常州星海电子有限公司 Low-voltage-drop high-reverse-voltage fast-recovery diode process control method
CN104201102A (en) * 2014-08-28 2014-12-10 苏州启澜功率电子有限公司 Fast recovery diode FRD chip and production process for same
CN104201102B (en) * 2014-08-28 2017-12-12 苏州启澜功率电子有限公司 A kind of fast recovery diode FRD chips and its manufacture craft
CN104766790A (en) * 2015-03-11 2015-07-08 苏州启澜功率电子有限公司 Phosphorus and boron liquid source one-shot perfect diffusion process
CN105977155A (en) * 2016-07-01 2016-09-28 扬州虹扬科技发展有限公司 Making process of fast recovery chip
CN105977155B (en) * 2016-07-01 2020-03-20 扬州虹扬科技发展有限公司 Manufacturing process of fast recovery chip
CN106571402A (en) * 2016-11-18 2017-04-19 吉林瑞能半导体有限公司 Fast recovery diode and manufacturing method thereof
CN106571402B (en) * 2016-11-18 2024-03-29 吉林瑞能半导体有限公司 Fast recovery power diode and manufacturing method thereof
CN109755117A (en) * 2017-11-01 2019-05-14 天津环鑫科技发展有限公司 Method for manufacturing FRGPP chip by adopting printing process
CN109755103A (en) * 2017-11-01 2019-05-14 天津环鑫科技发展有限公司 Method for reducing glass points of electrophoresis glass passivation process
CN109755117B (en) * 2017-11-01 2023-05-23 天津环鑫科技发展有限公司 Method for manufacturing FRGPP chip by adopting printing process
CN109755118B (en) * 2017-11-01 2023-05-23 天津环鑫科技发展有限公司 FRGPP chip glass-front multiple diffusion process
CN109755118A (en) * 2017-11-01 2019-05-14 天津环鑫科技发展有限公司 FRGPP chip glass passivation front multiple diffusion technology
CN113178385A (en) * 2021-03-31 2021-07-27 青岛惠科微电子有限公司 Chip manufacturing method and device and chip
CN113223953A (en) * 2021-03-31 2021-08-06 青岛惠科微电子有限公司 Manufacturing method and manufacturing equipment of fast recovery chip and fast recovery chip
CN113223944A (en) * 2021-03-31 2021-08-06 青岛惠科微电子有限公司 Manufacturing method and manufacturing equipment of fast recovery chip and fast recovery chip
CN113178385B (en) * 2021-03-31 2022-12-23 青岛惠科微电子有限公司 Chip manufacturing method and device and chip
CN114724936A (en) * 2022-03-30 2022-07-08 青岛惠科微电子有限公司 Preparation method of semiconductor device and semiconductor device

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