CN103745926B - Low pressure drop high back-pressure fast recovery diode process control method - Google Patents
Low pressure drop high back-pressure fast recovery diode process control method Download PDFInfo
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- CN103745926B CN103745926B CN201310697435.1A CN201310697435A CN103745926B CN 103745926 B CN103745926 B CN 103745926B CN 201310697435 A CN201310697435 A CN 201310697435A CN 103745926 B CN103745926 B CN 103745926B
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- 238000011084 recovery Methods 0.000 title claims abstract description 101
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000004886 process control Methods 0.000 title claims abstract description 7
- 238000012360 testing method Methods 0.000 claims abstract description 32
- GVVPGTZRZFNKDS-JXMROGBWSA-N geranyl diphosphate Chemical compound CC(C)=CCC\C(C)=C\CO[P@](O)(=O)OP(O)(O)=O GVVPGTZRZFNKDS-JXMROGBWSA-N 0.000 claims abstract description 29
- 230000015556 catabolic process Effects 0.000 claims abstract description 26
- 238000009826 distribution Methods 0.000 claims abstract description 26
- 239000007771 core particle Substances 0.000 claims abstract description 18
- 238000010923 batch production Methods 0.000 claims abstract description 6
- 238000005516 engineering process Methods 0.000 claims description 7
- 238000013507 mapping Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 241000208340 Araliaceae Species 0.000 claims description 4
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 claims description 4
- 235000003140 Panax quinquefolius Nutrition 0.000 claims description 4
- 240000007711 Peperomia pellucida Species 0.000 claims description 4
- 235000012364 Peperomia pellucida Nutrition 0.000 claims description 4
- 238000004458 analytical method Methods 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 4
- 239000012141 concentrate Substances 0.000 claims description 4
- 235000008434 ginseng Nutrition 0.000 claims description 4
- 239000004744 fabric Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical group OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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Abstract
The invention relates to the manufacturing process of diode, refers in particular to low pressure drop high back-pressure fast recovery diode process control method.Described method includes: 1. at breakdown reverse voltage, reverse recovery time, in three electrical parameters of forward voltage drop, adjust breakdown reverse voltage to more than 1200V, and ensure that forward voltage drop is less than 960mV, 2. after breakdown reverse voltage and forward voltage drop reach requirement, adjust reverse recovery time, observe the change of forward voltage drop, select the satisfactory diode of forward voltage drop, the reverse recovery time that test is corresponding, and as the desired value of electrical parameter adjustment, 3. electrical parameter adjusts process, according to the distribution situation of reverse recovery time in GPP chip, it is adjusted controlling parameter, the GPP core particles ratio meeting three electrical parameters reaches maximum, and have this parameter as the control parameter of batch production.Utilize the method can prepare below forward voltage drop 1150mV, reverse recovery time below 125ns, more than breakdown reverse voltage 1200V fast recovery diode, improve and manufacture efficiency.
Description
Technical field
The invention relates to field of electronic devices, particularly points out low pressure drop high back-pressure fast recovery diode technique control
Method processed.
Background technology
Fast recovery diode (be called for short FRD) is a kind of to have that switching characteristic is good, short feature reverse recovery time
Semiconductor diode, is mainly used in the electronic circuits such as Switching Power Supply, PWM pulse width modulator, converter,
Use as high-frequency rectification diode, fly-wheel diode or damper diode.
Fast recovery diode model mainly has FR101～FR107, breakdown reverse voltage 50V～1000V, just at present
To pressure drop 1.3V, reverse recovery time (being called for short TRR) FR101～FR105 is at below 150ns, FR106～FR107
At below 300ns.Due to fast recovery diode forward voltage drop, reverse recovery time, breakdown reverse voltage three
The relation of mutually restriction is there is: reverse recovery time is the shortest, and forward voltage drop is the highest between person；Reverse breakdown electricity
Pressing the highest, forward voltage drop is the highest.Therefore, reverse recovery time to be obtained is short, breakdown reverse voltage is high, just
It is the highly difficult thing of part to the fast recovery diode that pressure drop is low.
Innovation and creation content
For the problems referred to above, the invention proposes low pressure drop high back-pressure fast recovery diode process control method.
In order to solve above-mentioned technical problem, the invention is achieved through the following technical solutions:
Low pressure drop high back-pressure fast recovery diode process control method, comprises the following steps:
1. in the breakdown reverse voltage of diode, reverse recovery time, three electrical parameters of forward voltage drop, first
First adjustment breakdown reverse voltage is to more than 1200V, and ensures that forward voltage drop is less than 960mV；
2. after the breakdown reverse voltage at substrate all reaches requirement with forward voltage drop, then when adjusting its Reverse recovery
Between, observe the variation tendency of forward voltage drop simultaneously, select the satisfactory diode of forward voltage drop, test it
Corresponding reverse recovery time, the target that reverse recovery time, scope adjusted as electrical parameter that will test out
Value；
3. during electrical parameter adjusts, according to the distribution situation of reverse recovery time in GPP chip, to control
Parameter processed is adjusted, and makes to meet in GPP chip breakdown reverse voltage, reverse recovery time, forward simultaneously
The core particles ratio of three parameters of pressure drop reaches maximum, and using this technological parameter as the parameter produced in batches.
Further, the described technique adjustment in manufacturing process make use of computer-aided analysis technology, including:
(1). test machine, tester are connected with computer, by special software realize tester and computer it
Between data communication, Real-time Collection also preserves test data；
(2). coding makes test data form man-to-man mapping relations with the core particles in GPP chip；
(3). every all corresponding unique parameter value of core particles, the parameter value of a certain scope is defined as specifically
Color, every core particles in GPP chip will present corresponding color on computers, by reverse recovery time
Test data and core particles form mapping relations, the distribution of color obtained the most truly reflects in GPP chip anti-
To the distribution situation of recovery time；
(4). obtained the scattergram of correspondence by test of many times, from figure, observe the distribution of reverse recovery time
Situation and variation tendency, find out and scope reverse recovery time can be made to concentrate most, be distributed and control parameter the most uniformly,
It is defined as the control parameter of batch production.
Using such scheme, the invention provides the benefit that: utilize the method can prepare forward voltage drop
Below 1150mV, reverse recovery time below 125ns, more than breakdown reverse voltage 1200V fast recover two
Pole manage, with forward voltage drop 1300mV below, below 300ns reverse recovery time, breakdown reverse voltage 1000V
Above like product is compared, and has obvious advantage.
Accompanying drawing explanation
In figure, 1 represents dark grey area, and 2 represent frosty area, and 3 represent light gray region.
Fig. 1 is the test data of GPP chip reverse recovery time before technique adjustment, uses the invention to carry
Scattergram reverse recovery time that the method gone out generates.Wherein, when outer ring and inner ring dark-grey expression Reverse recovery
Between less than 90ns, inner ring light gray represents anti-between 90～100ns reverse recovery time for inner ring greyish white expression
To recovery time between 100～120ns；
Fig. 2 is the control method using the invention to propose, and adjusts according to the distribution situation of Fig. 1 and controls ginseng
After number, GPP chip scattergram reverse recovery time tested and generate.Wherein, the dark-grey expression in outer ring is reverse
Recovery time be less than 90ns, centre circle greyish white expression reverse recovery time between 90～100ns, inner ring light gray
Represent that reverse recovery time is between 100～120ns；
Fig. 3 is the control method using the invention to propose, and again adjusts control according to the distribution situation of Fig. 2
After parameter processed, GPP chip scattergram reverse recovery time tested and generate.Wherein, the dark-grey expression in outer ring
Reverse recovery time be less than 90ns, centre circle greyish white expression reverse recovery time between 90～100ns, inner ring
Light gray represents that reverse recovery time is between 100～120ns.
Detailed description of the invention
Low pressure drop high back-pressure fast recovery diode process control method, comprises the following steps:
(1). in the breakdown reverse voltage of diode, reverse recovery time, three electrical parameters of forward voltage drop,
First adjustment breakdown reverse voltage is to more than 1200V, and ensures that forward voltage drop is less than 960mV；
(2). after breakdown reverse voltage and the forward voltage drop of substrate all reach requirement, then it is the most extensive to adjust it
The multiple time, observe the variation tendency of forward voltage drop simultaneously.Select the satisfactory diode of forward voltage drop, survey
Try the reverse recovery time of its correspondence, using what reverse recovery time of testing out, scope adjusted as electrical parameter
Desired value；
(3). during electrical parameter adjusts, according to the distribution situation of reverse recovery time in GPP chip,
Be adjusted controlling parameter, make GPP chip meets simultaneously breakdown reverse voltage, reverse recovery time,
The core particles ratio of three parameters of forward voltage drop reaches maximum, and using this technological parameter as the ginseng produced in batches
Number.
The described technique adjustment in manufacturing process make use of computer-aided analysis technology, including:
(1). test machine, tester are connected with computer, by special software realize tester and computer it
Between data communication, Real-time Collection also preserves test data；
(2). coding makes test data form man-to-man mapping relations with the core particles in GPP chip；
(3). every all corresponding unique parameter value of core particles, the parameter value of a certain scope is defined as specifically
Color, every core particles in GPP chip will present certain specific color on computers.By Reverse recovery
The test data of time form mapping relations with core particles, and the distribution of color obtained the most truly reflects GPP chip
The distribution situation of upper reverse recovery time；
(4). obtained the scattergram of correspondence by test of many times, from figure, observe the distribution of reverse recovery time
Situation and variation tendency, find out and scope reverse recovery time can be made to concentrate most, be distributed and control parameter the most uniformly,
It is defined as the control parameter of batch production.
Specifically, the fast recovery diode of excellent performance to be expected, it is necessary to consider forward voltage drop,
Relation between reverse recovery time and breakdown reverse voltage three.First we adjust breakdown reverse voltage extremely
More than 1200V, and ensure that forward voltage drop is less than 960mV.By substrate being cut, welding, pickling,
After the operation such as gluing, mold pressing, the classical electrical parameter of substrate can be tested out.Reverse breakdown electricity at substrate
After pressure and forward voltage drop all meet the requirements, further adjust its reverse recovery time, observe forward pressure simultaneously
The variation tendency of fall.GPP chip is cut into core particles packaging and testing, selects forward voltage drop satisfactory
Finished product diode, tests the reverse recovery time of its correspondence, then scope reverse recovery time tested out is made
Desired value for technical arrangement plan.During technique adjustment, according in GPP chip during Reverse recovery
Between distribution situation, be constantly finely adjusted, until make in GPP chip to meet reversely simultaneously controlling parameter
Breakdown voltage, reverse recovery time, the core particles ratio of three parameters of forward voltage drop reach maximum, are finally
Can be using this control parameter as the control parameter produced in batches.
Make use of computer-aided analysis technology during technique adjustment, test machine, tester be connected with computer,
Realizing the data communication between tester and computer by special software, Real-time Collection also preserves test data.
Coding makes test data form man-to-man mapping relations, by particular range with the core particles in GPP chip
Reverse recovery time be defined as specific color, the distribution of color finally given the most truly reflects GPP core
The distribution situation of reverse recovery time on sheet.Obtained the scattergram of correspondence by test of many times, observe from figure
The distribution situation of reverse recovery time and variation tendency, find out scope reverse recovery time can be made to concentrate most, point
Cloth controls parameter the most uniformly, is defined as the control parameter of batch production.
Fig. 1 is the test data of GPP chip reverse recovery time before technique adjustment, uses the invention to carry
Scattergram reverse recovery time that the method gone out generates.Wherein, when outer ring and inner ring dark-grey expression Reverse recovery
Between less than 90ns, inner ring light gray represents anti-between 90～100ns reverse recovery time for inner ring greyish white expression
To recovery time between 100～120ns.Be can be seen that by scattergram, dark grey area distribution is very wide, and
Also there is substantial amounts of dark grey area at GPP chip center, light gray region almost without, reverse recovery time is mainly distributed
High in the distribution accounting of below 100ns, below 90ns.Although reverse recovery time all meets the requirements, but instead
To recovery time too short (less than 90ns), forward voltage drop (more than 1150mV) bigger than normal can be caused.Below 90ns
Distribution accounting high, it is meant that the overproof probability of forward voltage drop is the biggest；
Fig. 2 is the control method using the invention to propose, and adjusts according to the distribution situation of Fig. 1 and controls ginseng
After number, GPP chip scattergram reverse recovery time tested and generate.Wherein, the dark-grey expression in outer ring is reverse
Recovery time be less than 90ns, centre circle greyish white expression reverse recovery time between 90～100ns, inner ring light gray
Represent that reverse recovery time is between 100～120ns.Be can be seen that by scattergram, dark grey area reduces in a large number,
Only being distributed in crescent moon region, edge, frosty area reduces, and gradually to edge transitions, central area light gray divides
Cloth increases, and is mainly distributed on reverse recovery time between 90～120ns.The corresponding pass obtained according to test before
System, after reaching certain value reverse recovery time (this time test empirical value is 90ns), forward voltage drop can fall substantially
Within the scope (1150mV) required, therefore, it is distributed in 90～120ns reverse recovery time, just can make
Requirement is substantially met to pressure drop；
Fig. 3 is the control method using the invention to propose, and again adjusts control according to the distribution situation of Fig. 2
After parameter processed, GPP chip scattergram reverse recovery time tested and generate.Wherein, the dark-grey expression in outer ring
Reverse recovery time be less than 90ns, centre circle greyish white expression reverse recovery time between 90～100ns, inner ring
Light gray represents that reverse recovery time is between 100～120ns.Be can be seen that by scattergram, dark grey area is almost
Disappearing, frosty area is crescent shape distribution at edge, and light gray area distribution is the widest.This time after technique adjustment,
It is mainly distributed on reverse recovery time between 100～120ns, from testing the corresponding relation obtained before,
Being more than 100ns reverse recovery time, the overproof probability of forward voltage drop is the least.Breakdown reverse voltage, Reverse recovery
Time, three parameters of forward voltage drop can meet requirement simultaneously well.
Utilize the method that the invention proposes, can be the most intuitively to after technique adjustment, during Reverse recovery
Between true distribution situation, for further electrical parameter adjust provide convenience.The invention proposes
Method can be not only that the technology controlling and process of small lot provides reference, owing to even machine test can obtain mass data, raw
The electrical parameter scattergram become is visual and understandable, can realize the tracking to batch production situation easily by this method,
Technology controlling and process for producing in enormous quantities provides strong guarantee.
Claims (1)
1. low pressure drop high back-pressure fast recovery diode process control method, it is characterised in that: include following step
Rapid:
(1), in the breakdown reverse voltage of diode, reverse recovery time, three electrical ginsengs of forward voltage drop
In number, first adjustment breakdown reverse voltage is to more than 1200V, and ensures that forward voltage drop is less than 960mV；
(2), after breakdown reverse voltage and the forward voltage drop of substrate all reach requirement, then it is reverse to adjust it
Recovery time, observe the variation tendency of forward voltage drop simultaneously, select the satisfactory diode of forward voltage drop,
Test the reverse recovery time of its correspondence, scope reverse recovery time tested out is adjusted as electrical parameter
Whole desired value；
(3), electrical parameter adjust during, according to the distribution situation of reverse recovery time in GPP chip,
It is adjusted controlling parameter, makes fall within target range the reverse recovery time of GPP chip,
Described electrical parameter adjusts and make use of computer-aided analysis technology, including:
(1), test machine, tester are connected with computer, are realized between tester and computer by software
Data communication, Real-time Collection also preserves test data；
(2), coding makes test data form man-to-man mapping relations with the core particles in GPP chip；
(3), all corresponding unique parameter value of every core particles, the parameter value of a certain scope is defined as specific
Color, every core particles in GPP chip will present corresponding color on computers, by Reverse recovery
The test data of time form mapping relations with core particles, and the distribution of color obtained the most truly reflects GPP core
The distribution situation of reverse recovery time on sheet；
(4), obtain corresponding scattergram by test of many times, from figure, observe dividing of reverse recovery time
Cloth situation and variation tendency, find out and scope reverse recovery time can be made to concentrate most, be distributed and control the most uniformly
Parameter, is defined as the control parameter of batch production.
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| CN201310697435.1A CN103745926B (en) | 2013-12-18 | 2013-12-18 | Low pressure drop high back-pressure fast recovery diode process control method |
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|---|---|---|---|
| CN201310697435.1A CN103745926B (en) | 2013-12-18 | 2013-12-18 | Low pressure drop high back-pressure fast recovery diode process control method |
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| CN103745926A CN103745926A (en) | 2014-04-23 |
| CN103745926B true CN103745926B (en) | 2016-10-05 |
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| CN105390422B (en) * | 2015-11-03 | 2018-10-23 | 常州星海电子股份有限公司 | A kind of process control method of the high back-pressure fast recovery diode of low pressure drop |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101320076A (en) * | 2008-07-23 | 2008-12-10 | 潘敏智 | Reverse dynamic drain current test method and test circuit for fast recovery diode |
| CN101504954A (en) * | 2009-03-02 | 2009-08-12 | 吉林华微电子股份有限公司 | High voltage power fast recovery diode and manufacturing method thereof |
| CN102087976A (en) * | 2010-12-10 | 2011-06-08 | 天津中环半导体股份有限公司 | Fast recovery diode (FRD) chip and production process thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101320076A (en) * | 2008-07-23 | 2008-12-10 | 潘敏智 | Reverse dynamic drain current test method and test circuit for fast recovery diode |
| CN101504954A (en) * | 2009-03-02 | 2009-08-12 | 吉林华微电子股份有限公司 | High voltage power fast recovery diode and manufacturing method thereof |
| CN102087976A (en) * | 2010-12-10 | 2011-06-08 | 天津中环半导体股份有限公司 | Fast recovery diode (FRD) chip and production process thereof |
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Address after: 213022 Changzhou, Jiangsu new North District, Tianmu Lake Road, No. 1 Patentee after: Changzhou Xinghai Electronic Limited by Share Ltd Address before: 213022 Changzhou, Jiangsu new North District, Tianmu Lake Road, No. 1 Patentee before: Changzhou Star Sea Electronics Co., Ltd. |