CN102881770B - The preparation method of selective emitter battery - Google Patents
The preparation method of selective emitter battery Download PDFInfo
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- CN102881770B CN102881770B CN201210369890.4A CN201210369890A CN102881770B CN 102881770 B CN102881770 B CN 102881770B CN 201210369890 A CN201210369890 A CN 201210369890A CN 102881770 B CN102881770 B CN 102881770B
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Abstract
The invention discloses a kind of preparation method of selective emitter battery.The preparation that the method comprises the removal of damage layer and matte preparation successively, diffusion makes p-n junction, the removal of the removal of surperficial PSG and periphery p-n junction, passivated reflection reducing penetrate layer, metallization and sorting, make between p-n junction step and the removal of surperficial PSG and the removal step of periphery p-n junction in diffusion and comprise the step that laser doping makes selective emitter further.Apply technical scheme of the present invention, the step that a step laser doping makes selective emitter only need be added on the preparation technology basis of existing conventional solar cell, just can complete the preparation of selective emitter battery, processing step is simple, and operating parameter easily controls, suitable large-scale industrial production.
Description
Technical field
The present invention relates to solar cell preparing technical field, in particular to a kind of preparation method of selective emitter battery.
Background technology
As the new forms of energy of clean environment firendly, the application of solar cell gets more and more.But the cost compare of this battery is high, limit the universal fast of it.Preparation technology's flow process of the battery of solar energy as shown in Figure 1, comprise the removal of damage layer and matte preparation, diffusion make p-n junction, preparation that the removal of the removal of surperficial PSG and periphery p-n, passivated reflection reducing penetrate layer, metallization (back electrode, the printing-sintering of back of the body electric field and positive electrode) and sorting.
In order to reduce costs, new technology is constantly adopted to improve the conversion efficiency of solar cell with regard to needing.Wherein selective emitter battery is exactly that a kind of technique is relatively simple, and effectively can promote the new technology of solar battery efficiency.According to the principle of selective emitter battery, there is multiple method can realize this structure.But many methods are wherein that processing step is loaded down with trivial details, increase cost high, be not suitable for suitability for industrialized production.Such as immediate technical scheme comprises the following steps with the present invention: the preparation that prepared by the removal of damage layer and matte, silk screen printing phosphorus source, chemical cleaning and diffusion, the removal of the removal of surperficial PSG and periphery p-n, passivated reflection reducing penetrate layer, metallization (back electrode, the printing-sintering of back of the body electric field and positive electrode) and sorting.But, there is following technological deficiency in this method: 1) after making herbs into wool, need on silicon chip, carry out printing phosphorus source, oven dry, carry out chemical cleaning, diffusion again, this kind of technology, introduces many procedures, especially after making herbs into wool, silicon chip is vulnerable to the impact of peripheral environment, and this processing ease causes the damage of silicon chip; 2) after completing the printing of phosphorus source, need to carry out chemical cleaning, due to the unsteadiness of chemical liquid itself, cause process wayward, be namely unfavorable for that industrialization automation is promoted.
Summary of the invention
The present invention aims to provide a kind of preparation method of selective emitter battery, walks complexity with the preparation technology solving selective emitter battery in prior art, the technical problem of unfavorable suitability for industrialized production.
To achieve these goals, according to an aspect of the present invention, a kind of preparation method of selective emitter battery is provided.The preparation that the method comprises the removal of damage layer and matte preparation successively, diffusion makes p-n junction, the removal of the removal of surperficial PSG and periphery p-n junction, passivated reflection reducing penetrate layer, metallization and sorting, make between p-n junction step and the removal of surperficial PSG and the removal step of periphery p-n junction in diffusion and comprise the step that laser doping makes selective emitter further.
Further, laser doping makes the step of selective emitter and comprises: utilize laser to irradiate on silicon chip for metallized region, make the P elements enrichment of adulterating, formation selective emitter in the region in.
Further, the power of laser is 40 ~ 60W, and pulse duration is 50 ~ 200ns, and wavelength is 532nm, and frequency is 0 ~ 260KHz, and the diameter of hot spot is 10 × 190 μm or 270 × 270 μm.
Further, the time of the irradiation of laser is 0.5 ~ 2s.
Further, diffusion makes in the step of p-n junction and controls the diffused sheet resistance of silicon chip at 90 ~ 100 ohm.
Further, size and the silicon chip sheet resistance of FREQUENCY CONTROL after laser emission by adjusting laser energy reduce by 35 ~ 45 ohm relative to before laser irradiation.
Apply technical scheme of the present invention, on the preparation technology basis of existing conventional solar cell, only only need add the step that a step laser doping makes selective emitter, just can complete the preparation of selective emitter battery, processing step is simple, and operating parameter easily controls, suitable large-scale industrial production.
Accompanying drawing explanation
Figure of description is used to provide a further understanding of the present invention, forms a part of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 shows the preparation technology's flow chart according to selective emitter battery in prior art; And
Fig. 2 shows preparation technology's flow chart of the selective emitter battery according to the embodiment of the present invention.
Embodiment
It should be noted that, when not conflicting, the embodiment in the present invention and the feature in embodiment can combine mutually.Below with reference to the accompanying drawings and describe the present invention in detail in conjunction with the embodiments.
According to a kind of typical execution mode of the present invention, as shown in Figure 2, the preparation that the preparation method of selective emitter battery comprises the removal of damage layer and matte preparation successively, diffusion makes p-n junction, the removal of the removal of surperficial PSG and periphery p-n junction, passivated reflection reducing penetrate layer, metallization and sorting, make between p-n junction step and the removal of surperficial PSG and the removal step of periphery p-n junction in diffusion and comprise the step that laser doping makes selective emitter further.Apply technical scheme of the present invention, on the preparation technology basis of existing conventional solar cell, only only need add the step that a step laser doping makes selective emitter, just can complete the preparation of selective emitter battery, processing step is simple, and operating parameter easily controls, suitable large-scale industrial production.
Preferably, laser doping makes the step of selective emitter and comprises: utilize laser to irradiate on silicon chip for metallized region, make the P elements enrichment of adulterating, formation selective emitter in the region in.Wherein, metallization refers to back electrode, the printing-sintering of back of the body electric field and positive electrode.This technique is principle is make in the step of p-n junction in diffusion, the thick PSG layer of one deck is generated at silicon chip surface, the inside is containing P atom, when laser doping, utilize localized hyperthermia's characteristic of laser, make the phosphorus atoms of phosphorosilicate glass (PSG) the inside be advanced into contact zone further and form the effect spread again, thus improve the concentration of this region phosphorus, do not have to irradiate then sheet resistance is relatively low in region, so just can finally obtain good ohmic contact.
In production process, the control of laser doping operation is even more important, and energy is little, can not reach doping effect, and energy is large, destroys P/N knot.The power of laser is 40 ~ 60W, and pulse duration is 50 ~ 200ns, and wavelength is 532nm, and frequency is 0 ~ 260KHz, and the diameter of hot spot is 10 × 190 μm or 270 × 270 μm.Preferably, the power of laser is 45W, and pulse duration is 50ns, and wavelength is 532nm, and frequency is 200KHz, and the diameter of hot spot is 10 × 190 μm.Preferably, the time of the irradiation of laser is 0.5 ~ 2s, is more preferably 1s.Preferably, in process of production, before laser doping, diffusion makes in the step of p-n junction and controls the diffused sheet resistance of silicon chip at 90 ~ 100 ohm; The surperficial phosphorus concentration of such undoped region is low, is conducive to reducing dead layer and surface recombination, is beneficial to the gain of voltage and electric current.Preferably, by adjusting the size of laser energy and the silicon chip sheet resistance of FREQUENCY CONTROL after laser emission reduces by 35 ~ 45 ohm relative to before laser irradiation, after such laser doping, just can conventionally in step directly carry out follow-up production.
Beneficial effect of the present invention is further illustrated below in conjunction with embodiment.
Comparative example is adopt the commercially available selective emitter prepared by common process.
Embodiment 1
Film source adopts 156 × 156 polysilicon chips, and thickness is 180 μm, divides equally 2 groups, often organizes 500 (divide two groups, one group is carried out laser doping and makes selective emitter, and one group is omitted this step, and other preparation technologies are identical).
Preparation technology: successively by the removal of damage layer and matte preparation, diffusion makes p-n junction, laser doping makes selective emitter, the removal of the removal of surperficial PSG and periphery p-n junction, passivated reflection reducing penetrate layer preparation, metallization and sorting step prepare selective emitter battery.In above-mentioned steps, two groups of silicon chips all adopt identical equipment to carry out.
Wherein, diffusion makes in the step of p-n junction and controls the diffused sheet resistance of described silicon chip at 90 ~ 100 ohm; Utilize laser to irradiate on silicon chip for metallized region, make the P elements enrichment of adulterating in described region, form described selective emitter, the power of laser is 45W, and pulse duration is 50ns, and wavelength is 532nm, frequency is 250KHz, and the diameter of hot spot is 10*190 μm; The time of the irradiation of described laser is 0.5s; Silicon chip sheet resistance after described laser emission reduces by 35 ohm relative to before described laser irradiation.
Comparative example sheet resistance is 77.64 ohm, and the sheet resistance of embodiment 1 diffusion technology is 90.58, and after laser doping, the sheet resistance under the positive silver of embodiment 1 reaches 55.29 ohm.Performance test is carried out to selective emitter battery prepared by embodiment 1, finds that its photoelectric conversion efficiency reaches 17.24%.
Table 1
| Open circuit voltage (mV) | Short circuit current (mA) | Fill factor, curve factor | Efficiency | |
| Comparative example | 0.623 | 8.520 | 77.45 | 16.93 |
| Embodiment 1 | 0.626 | 8.432 | 79.00 | 17.18 |
| Gain | 0.003 | 0.088 | 1.55 | 0.25 |
The data of table 1 show, adopting technical scheme of the present invention to prepare the selective emitter efficiency that comparatively prepared by common process (comparative example) has 0.25% gain, illustrates that the lifting of technical scheme of the present invention to polycrystal silicon cell efficiency is helpful.
Embodiment 2
Film source adopts 156 × 156 polysilicon chips, and thickness is 180 μm, divides equally 2 groups, often organizes 500 (divide two groups, one group is carried out laser doping and makes selective emitter, and one group is omitted this step, and other preparation technologies are identical).
Successively by the removal of damage layer and matte preparation, diffusion makes p-n junction, laser doping makes selective emitter, the removal of the removal of surperficial PSG and periphery p-n junction, passivated reflection reducing penetrate layer preparation, metallization and sorting step prepare selective emitter battery.
Wherein, diffusion makes in the step of p-n junction and controls the diffused sheet resistance of described silicon chip at 90 ~ 100 ohm; Utilize laser to irradiate on silicon chip for metallized region, make the P elements enrichment of adulterating in described region, form described selective emitter, the power of laser is 45W, and pulse duration is 50ns, and wavelength is 532nm, frequency is 140KHz, and the diameter of hot spot is 10*190 μm; The time of the irradiation of described laser is 1s; Silicon chip sheet resistance after described laser emission reduces by 45 ohm relative to before described laser irradiation.
Performance test is carried out to selective emitter battery prepared by embodiment 2, finds that its photoelectric conversion efficiency reaches 17.25%.
Table 2
| Open circuit voltage (mV) | Short circuit current (mA) | Fill factor, curve factor | Efficiency | |
| Comparative example | 0.628 | 8.452 | 78.04 | 17.05 |
| Embodiment 2 | 0.629 | 8.474 | 78.70 | 17.25 |
| Gain | 0.001 | 0.022 | 0.66 | 0.20 |
The data of table 1 show, adopting technical scheme of the present invention to prepare the selective emitter efficiency that comparatively prepared by common process (comparative example) has 0.20% gain, illustrates that the lifting of technical scheme of the present invention to polycrystal silicon cell efficiency is helpful.
As can be seen from above-described embodiment, apply technical scheme of the present invention, on the preparation technology basis of existing conventional solar cell, only only need add the step that a step laser doping makes selective emitter, just can complete the preparation of selective emitter battery, processing step is simple, and operating parameter easily controls, suitable large-scale industrial production.And the selective emitter battery of preparation is functional.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (2)
1. the preparation method of a selective emitter battery, comprise the removal of damage layer and matte preparation successively, diffusion make p-n junction, preparation that the removal of the removal of surperficial PSG and periphery p-n junction, passivated reflection reducing penetrate layer, metallization and sorting, it is characterized in that, between described diffusion making p-n junction step and the removal of described surperficial PSG and the removal step of periphery p-n junction, comprise the step that laser doping makes selective emitter further; Wherein, laser is utilized to irradiate on silicon chip for metallized region, make the P elements enrichment of adulterating in described region, form described selective emitter, the power of laser is 45W, and pulse duration is 50ns, wavelength is 532nm, frequency is 250KHz, and hot spot is of a size of 10*190 μm, and the time of the irradiation of described laser is 0.5s; Described diffusion makes in the step of p-n junction and controls the diffused sheet resistance of described silicon chip at 90 ~ 100 ohm.
2. preparation method according to claim 1, is characterized in that, reduces by 35 ~ 45 ohm by the size and the silicon chip sheet resistance of FREQUENCY CONTROL after described laser emission adjusting described laser energy relative to before described laser irradiation.
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| CN103528558B (en) * | 2013-10-21 | 2016-01-13 | 南通大学 | A kind of solar battery laser back electrode window is windowed endpoint method |
| CN103700726B (en) * | 2013-12-26 | 2016-02-24 | 华中科技大学温州先进制造技术研究院 | A kind of efficient selective emitter solar battery laser doping method |
| CN110459646A (en) * | 2019-08-07 | 2019-11-15 | 山西潞安太阳能科技有限责任公司 | A kind of novel process for throwing laser selective emitter suitable for alkali |
| CN111180530A (en) * | 2019-12-27 | 2020-05-19 | 天津爱旭太阳能科技有限公司 | Preparation method of selective emitter battery |
| CN114078978A (en) * | 2020-12-18 | 2022-02-22 | 帝尔激光科技(无锡)有限公司 | Preparation method and preparation equipment of solar cell selective emitter |
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| CN101800261A (en) * | 2009-02-05 | 2010-08-11 | Snt能源技术有限公司 | Method for forming selective emitter of solar cell and diffusion apparatus for forming the same |
| CN101997060A (en) * | 2010-10-25 | 2011-03-30 | 山东力诺太阳能电力股份有限公司 | Selective diffusion technology for crystalline silicon solar cell |
| CN102110743A (en) * | 2010-12-01 | 2011-06-29 | 江苏林洋太阳能电池及应用工程技术研究中心有限公司 | Method for manufacturing selective emitter solar cell from local laser melting phosphorosilicate glass |
| CN102487102A (en) * | 2010-12-03 | 2012-06-06 | 上海凯世通半导体有限公司 | Solar cell and preparation method thereof |
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| CN101800261A (en) * | 2009-02-05 | 2010-08-11 | Snt能源技术有限公司 | Method for forming selective emitter of solar cell and diffusion apparatus for forming the same |
| CN101997060A (en) * | 2010-10-25 | 2011-03-30 | 山东力诺太阳能电力股份有限公司 | Selective diffusion technology for crystalline silicon solar cell |
| CN102110743A (en) * | 2010-12-01 | 2011-06-29 | 江苏林洋太阳能电池及应用工程技术研究中心有限公司 | Method for manufacturing selective emitter solar cell from local laser melting phosphorosilicate glass |
| CN102487102A (en) * | 2010-12-03 | 2012-06-06 | 上海凯世通半导体有限公司 | Solar cell and preparation method thereof |
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