CN114078978A - Preparation method and preparation equipment of solar cell selective emitter - Google Patents
Preparation method and preparation equipment of solar cell selective emitter Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 238000009792 diffusion process Methods 0.000 claims abstract description 95
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 93
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 89
- 239000010703 silicon Substances 0.000 claims abstract description 89
- 238000004519 manufacturing process Methods 0.000 claims abstract description 38
- 238000010438 heat treatment Methods 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 43
- 238000004093 laser heating Methods 0.000 claims description 25
- 230000003287 optical effect Effects 0.000 claims description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 13
- 125000004437 phosphorous atom Chemical group 0.000 claims description 13
- 239000005388 borosilicate glass Substances 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 12
- 238000007493 shaping process Methods 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 10
- 230000033001 locomotion Effects 0.000 claims description 10
- 238000007781 pre-processing Methods 0.000 claims description 8
- 238000004321 preservation Methods 0.000 claims description 6
- 238000002203 pretreatment Methods 0.000 claims description 5
- 239000005360 phosphosilicate glass Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 63
- 238000010586 diagram Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- 239000013307 optical fiber Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The application discloses a preparation method and preparation equipment of a solar cell selective emitter. The preparation method of the solar cell selective emitter comprises the following steps: preheating a preset area of a semi-finished silicon wafer; carrying out local heavy doping on a diffusion layer of the semi-finished silicon wafer to form a heavy doping region, wherein the heavy doping region is positioned in a preset region, and the preset region is not smaller than the heavy doping region; wherein, the local heavy doping adopts a laser irradiation mode for doping. According to the preparation method and the preparation equipment of the solar cell selective emitter, the preset region of the semi-finished silicon wafer is subjected to preheating treatment, and then the diffusion layer of the semi-finished silicon wafer is subjected to local heavy doping by using laser to form the heavy doping region, so that the damage of the laser to the surface of the silicon wafer in the production process of laser processing of the solar cell with the selective emitter can be reduced, and the photoelectric conversion efficiency of the cell is improved.
Description
Technical Field
The application relates to the technical field of laser processing, in particular to a preparation method and preparation equipment of a solar cell selective emitter.
Background
After the selective emitter solar cell is subjected to texturing and diffusion on a silicon wafer, local heavy doping is performed in the area where the grid line electrode is printed, so that the contact resistance between the electrode and the silicon wafer can be reduced, and the photoelectric conversion efficiency of the cell is improved. The existing preparation method of the selective emitter solar cell generally uses slurry printing and then adopts methods such as high-temperature diffusion, mask etching and the like to prepare the solar cell. Application CN101950780A discloses a method for manufacturing a selective emitter cell by screen printing, which involves two screen printing and one mask diffusion, and has low productivity, which is not favorable for mass production. Application CN101820023A discloses a method for preparing a selective emitter of a crystalline silicon solar cell, which requires local heavy doping in vacuum, and has complex process steps and extremely high cost. Application CN102709387A discloses a selective emitter etching process, in which a mask is used to realize local heavy doping, the process is complex, and the alignment precision is difficult to ensure in the subsequent process. Application CN102110743A discloses a method for manufacturing a selective emitter solar cell by locally laser melting phosphorosilicate glass, the method uses laser to scan the phosphorosilicate glass on the surface of a silicon wafer to realize local heavy doping, the laser has the problem of uneven doping, and the silicon wafer can be damaged by higher laser energy.
Disclosure of Invention
The object of the present application is to solve at least to some extent one of the above mentioned technical problems.
Therefore, a first objective of the present application is to provide a method for manufacturing a selective emitter of a solar cell, which can reduce damage of laser to the surface of a silicon wafer in a production process of laser processing the selective emitter solar cell, thereby improving the photoelectric conversion efficiency of the cell.
A second object of the present application is to provide an apparatus for manufacturing a selective emitter of a solar cell.
In order to achieve the above object, an embodiment of the first aspect of the present application provides a method for preparing a selective emitter of a solar cell, including: preheating a preset area of a semi-finished silicon wafer; carrying out local heavy doping on a diffusion layer of the semi-finished silicon wafer to form a heavy doping region, wherein the heavy doping region is positioned in the preset region, and the preset region is not smaller than the heavy doping region; and doping the local heavy doping by adopting a laser irradiation mode.
Optionally, the surface of the diffusion layer is covered by phosphosilicate glass or borosilicate glass, and the diffusion layer of the semi-finished silicon wafer is heavily doped locally to form a heavily doped region, including:
and irradiating the diffusion layer by using laser so as to enable phosphorus atoms in the phosphorosilicate glass or boron atoms in the borosilicate glass to replace the positions of silicon atoms in the diffusion layer, and forming the heavily doped region.
Optionally, the preset area is the whole semi-finished silicon wafer;
or the preset region is a strip-shaped region arranged corresponding to the heavily doped region, and the width of the preset region is not less than that of the heavily doped region.
Optionally, the preheating treatment is heating by a heating plate, heating by a heating chamber, heating by an LED lamp or an infrared lamp tube, or heating by laser.
Optionally, the preheating treatment is performed on the preset area of the semi-finished silicon wafer, and the preheating treatment includes:
and when the preset region is a strip-shaped region which is arranged corresponding to the heavily doped region, heating the preset region by adopting a laser heating method.
Optionally, irradiating the diffusion layer with laser light includes:
irradiating the diffusion layer by using the light spots irradiated by the laser, and scanning the heavily doped region of the whole diffusion layer; or
And irradiating the diffusion layer by using the light spots irradiated by the laser, and controlling the semi-finished silicon wafer to move along the preset direction, so that the laser scans through the heavily doped region of the whole diffusion layer.
Optionally, the shape of the light spot irradiated by the laser is one of a circle, an ellipse, a rectangle and a square.
Optionally, when the diffusion layer of the semi-finished silicon wafer is locally heavily doped to form a heavily doped region, the wavelength of the adopted laser is 355-1500nm, and the energy density is 0.2-2.0J/cm2。
Optionally, when the diffusion layer of the semi-finished silicon wafer is locally heavily doped to form a heavily doped region, the wavelength of the adopted laser is 800-1500 nm.
Optionally, the method further comprises:
after the preheating treatment is carried out on the preset area of the semi-finished silicon wafer, the heat preservation treatment is carried out on the preset area.
According to the preparation method of the selective emitter of the solar cell, the preset region of the semi-finished silicon wafer is subjected to preheating treatment, then the diffusion layer of the semi-finished silicon wafer is subjected to local heavy doping by using laser to form the heavy doping region, damage of the laser to the surface of the silicon wafer in the production process of processing the selective emitter solar cell by using the laser can be reduced, and the photoelectric conversion efficiency of the cell is improved.
In order to achieve the above object, an embodiment of a second aspect of the present application provides a device for preparing a selective emitter of a solar cell, including: a pretreatment device, a laser processing device and a workbench,
the pretreatment device is used for carrying out preheating treatment on a preset area of a semi-finished silicon wafer;
the laser processing device is used for carrying out local heavy doping on a diffusion layer of a preheated semi-finished silicon wafer to form a heavy doping area, wherein the heavy doping area is positioned in the preset area, the preset area is not smaller than the heavy doping area, and the local heavy doping is doped in a laser irradiation mode;
the workbench is used for placing the semi-finished silicon wafer.
Optionally, the pretreatment device is one of a heating table, a heating cavity, an LED lamp or infrared lamp tube heating device, and a laser heating device.
Optionally, the laser processing device is disposed above the worktable, and the preprocessing device is disposed above, below or around the worktable.
Optionally, the preprocessing device includes a first laser generator, the first laser generator generates first laser light, a first light spot is formed on the diffusion layer, and the first light spot covers the diffusion layer; alternatively, the first and second electrodes may be,
the pretreatment device comprises a first laser generator and a first focusing component, wherein the first laser generator generates first laser, the first laser passes through the first focusing component to form a first light spot on the diffusion layer, and the first light spot covers the diffusion layer.
Optionally, when the first light spot does not cover the whole diffusion layer, the preprocessing device further comprises a laser scanning component,
the laser scanning component controls the first laser to move, so that the first light spot passes through the whole diffusion layer; or
The preparation equipment of the solar cell selective emitter further comprises a first moving device, wherein the first moving device is used for driving the semi-finished silicon wafer to move, so that the first light spot passes through the whole diffusion layer.
Optionally, the worktable comprises a fixing device, and the fixing device is used for fixing the semi-finished silicon wafer on the worktable.
Optionally, the laser processing device includes a second laser generator and a second scanning focusing component, the second laser generator generates second laser, the second laser passes through the second scanning focusing component to form a second light spot on the diffusion layer, and the second scanning focusing component controls the second light spot to scan through the whole diffusion layer.
Optionally, the second scanning and focusing component is a galvanometer and a field lens, and the galvanometer and the field lens control a light path of the second laser light, so that the second light spot scans along the diffusion layer;
or the second scanning focusing component is a focusing mirror and a linear motor, the focusing mirror controls the second light spot of the second laser to be focused on the diffusion layer, and the linear motor drives the laser processing device to scan along the diffusion layer or drives the workbench to move relative to the second light spot.
Optionally, the laser processing device further comprises an optical shaping device,
and the optical shaping device controls the second laser to form at least one third light spot with a specific shape on the diffusion layer, so that the third light spot irradiates partial area or all area of the diffusion layer.
According to the preparation equipment of the solar cell selective emitter, the pre-treatment device is used for pre-treating the pre-set region of the semi-finished silicon wafer, then the laser processing device is used for carrying out local heavy doping on the diffusion layer of the pre-treated semi-finished silicon wafer by utilizing laser to form the heavy doping region, damage of the laser to the surface of the silicon wafer in the production process of laser processing of the solar cell with the selective emitter can be reduced, and the photoelectric conversion efficiency of the cell is further improved.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a flow chart of a method of fabricating a selective emitter of a solar cell according to an embodiment of the present application;
fig. 2 is a flow chart of a method of fabricating a selective emitter of a solar cell according to another embodiment of the present application;
fig. 3 is a schematic structural diagram of an apparatus for manufacturing a selective emitter of a solar cell according to an embodiment of the present application;
fig. 4 is a schematic structural diagram of an apparatus for manufacturing a selective emitter of a solar cell according to another embodiment of the present application;
FIG. 5 is a schematic structural diagram of an apparatus for manufacturing a selective emitter of a solar cell according to an embodiment of the present application;
FIG. 6 is a schematic structural diagram of an apparatus for manufacturing a selective emitter of a solar cell according to another embodiment of the present application;
fig. 7 is a schematic structural view of an apparatus for manufacturing a selective emitter of a solar cell according to still another embodiment of the present application;
FIG. 8 is a schematic structural diagram of an apparatus for manufacturing a selective emitter of a solar cell according to yet another embodiment of the present application;
FIG. 9 is a schematic structural diagram of an apparatus for manufacturing a selective emitter of a solar cell according to still another embodiment of the present application;
fig. 10 is a schematic structural view of an apparatus for manufacturing a selective emitter of a solar cell according to still another embodiment of the present application;
fig. 11 is a schematic structural diagram of an apparatus for manufacturing a selective emitter of a solar cell according to an embodiment of the present application;
fig. 12 is a schematic structural diagram of an apparatus for manufacturing a selective emitter of a solar cell according to an embodiment of the present application.
Detailed Description
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
The present invention is described in further detail below with reference to specific examples, which are not to be construed as limiting the scope of the invention as claimed.
A method and an apparatus for manufacturing a selective emitter of a solar cell according to an embodiment of the present application will be described below with reference to the accompanying drawings.
The preparation principle is as follows: when a solar cell is processed, a layer of phosphorosilicate glass or borosilicate glass is formed on the surface of a silicon wafer after texturing and diffusion, phosphorus atoms in the phosphorosilicate glass or boron atoms in the borosilicate glass are used as a diffusion source, the phosphorus atoms or the boron atoms are activated through preheating treatment, and then the phosphorus atoms or the boron atoms are propelled through laser to be diffused to a certain depth in the silicon wafer to form a PN junction, so that local heavy doping is realized. Because the pulse energy required by doping is low, the repetition frequency of the used laser is high, the processing speed can be improved, and the productivity of equipment can be improved. On the other hand, the lower laser energy can reduce the damage of laser processing to the surface of the silicon wafer and improve the photoelectric conversion efficiency of the cell.
Fig. 1 is a flow chart of a method for manufacturing a selective emitter of a solar cell according to an embodiment of the present application.
As shown in fig. 1, a method for preparing a selective emitter of a solar cell includes:
and S1, performing preheating treatment on the preset area of the semi-finished silicon wafer.
Wherein, the semi-finished silicon wafer refers to a silicon wafer which is subjected to texturing (or not) and diffusion, and a layer of phosphorosilicate glass or borosilicate glass is formed on the surface of the diffusion layer.
Before the semi-finished silicon wafer is processed, preheating treatment can be performed. The preheating treatment may be performed in various manners, such as heating by a heating plate, heating by a heating chamber, heating by an LED lamp or an infrared lamp, and laser heating.
Through the preheating treatment of the semi-finished silicon wafer, specifically, the temperature of the preheating treatment is 50-500 ℃, preferably 150-300 ℃, phosphorus atoms in phosphorosilicate glass or boron atoms in borosilicate glass on the diffusion layer can obtain a certain initial thermal movement speed, and the subsequent steps can be facilitated to further push the phosphorus atoms or the boron atoms.
And S2, carrying out local heavy doping on the diffusion layer of the semi-finished silicon wafer to form a heavy doping area.
After the preheating treatment, the diffusion layer of the semi-finished silicon wafer can be locally heavily doped by using a laser irradiation mode to form a heavily doped region.
Specifically, the surface of the diffusion layer of the semi-finished silicon wafer is covered with phosphorosilicate glass or borosilicate glass, the diffusion layer can be irradiated by laser, and because phosphorus atoms or boron atoms have a certain initial thermal movement speed, laser propulsion is carried out in the step, so that the phosphorus atoms in the phosphorosilicate glass or the boron atoms in the borosilicate glass replace the positions of silicon atoms in the diffusion layer, and a heavily doped region is formed.
The heavily doped region is located in the preset region, and the preset region is not smaller than the heavily doped region.
The preset region can be the whole semi-finished silicon wafer or a strip-shaped region arranged corresponding to the heavily doped region, and the width of the preset region is not less than that of the heavily doped region, so that the purpose of saving energy is achieved.
In one embodiment of the present application, when the predetermined region is a strip region disposed corresponding to the heavily doped region, the predetermined region is preferably heated by a laser heating method.
The method comprises the following steps of carrying out local heavy doping on a diffusion layer of a semi-finished silicon wafer to form a heavy doping region, wherein the method specifically comprises the following two modes:
the first mode is as follows: and irradiating the diffusion layer by using a light spot irradiated by the laser, and scanning the heavily doped region of the whole diffusion layer. That is, the semi-finished silicon wafer is kept stationary, and the whole diffusion layer is scanned by adjusting the light path of the laser. For example, the scanning path of the optical path is adjusted by using a galvanometer scanning mode or a mode that the whole laser device moves relative to the semi-finished silicon wafer.
The second mode is as follows: and irradiating the diffusion layer by using light spots irradiated by the laser, and controlling the semi-finished silicon wafer to move along the preset direction so that the laser scans through the heavily doped region of the whole diffusion layer. That is, the optical path of the laser is kept unchanged, and the scanning of the whole diffusion layer is realized by moving the semi-finished silicon wafer.
The laser spot irradiated by the laser may have various shapes, such as a circle, an ellipse, a rectangle, a square, etc. The optical fiber is preferably square or rectangular, so that the optical fiber has better spot uniformity and better doping effect.
When the diffusion layer of the semi-finished silicon wafer is locally heavily doped to form a heavily doped region, the wavelength of the adopted laser is 355-1500nm, and the energy density is 0.2-2.0J/cm2. Preferably, the laser has a wavelength of 800-1500 nm.
In another embodiment of the present application, as shown in fig. 2, the method for preparing a selective emitter of a solar cell further includes:
and S3, performing heat preservation treatment on the preset area after performing preheating treatment on the preset area of the semi-finished silicon wafer.
In general, the time interval between the preheating treatment and the local heavy doping is very small, and the heat preservation treatment is not needed. However, the heat preservation is beneficial to maintaining the initial thermal motion speed of the phosphorus atoms or the boron atoms, thereby ensuring the effect of subsequent processing. The heat preservation treatment can be carried out by adopting a preheating device to continue heating (temperature control).
According to the preparation method of the selective emitter of the solar cell, the preset region of the semi-finished silicon wafer is subjected to preheating treatment, then the diffusion layer of the semi-finished silicon wafer is subjected to local heavy doping by using laser to form the heavy doping region, damage of the laser to the surface of the silicon wafer in the production process of processing the selective emitter solar cell by using the laser can be reduced, and the photoelectric conversion efficiency of the cell is improved.
Several specific embodiments are described in detail below.
Example 1:
the preparation method of the solar cell selective emitter comprises a pretreatment stage and a heavy doping stage.
In the pretreatment stage, the whole semi-finished silicon wafer is preheated by adopting a heating table, a heating cavity or an infrared lamp tube heating mode, so that phosphorus atoms in phosphorosilicate glass or boron atoms in borosilicate glass obtain a certain initial thermal movement speed. And in the heavy doping stage, laser is adopted to irradiate the semi-finished silicon wafer (corresponding to the position of the heavy doping region), phosphorus atoms of the pretreated and activated phosphorosilicate glass or boron atoms in the borosilicate glass are pushed to enter the surface layer of the silicon wafer, and the phosphorus atoms or the boron atoms replace the position of the silicon atoms after solidification to form the heavy doping region. The laser wavelength used in heavy doping is 355-1500nm, preferably 515-545nm, and the scanning speed can be selected according to actual needs. The laser spot may be circular, elliptical, square, or rectangular, etc. The optical fiber is preferably square or rectangular, so that the optical fiber has better spot uniformity and better doping effect.
The preparation equipment of the solar cell selective emitter comprises a heating device, a laser processing device and a workbench.
The semi-finished silicon wafer is placed on a workbench, the laser processing device is arranged above the workbench, and the heating device is a heating table top, a heating cavity or an infrared lamp tube. The heating table top can be realized by arranging heating components such as heating rods on the working table top, and the semi-finished silicon wafer can be placed and heated at the same time. The heating cavity and the infrared lamp tube can be arranged near the workbench, such as below, above or around the workbench, so as to heat the whole semi-finished silicon wafer. The laser processing device comprises a laser generator, a vibrating mirror and a field lens, wherein the laser generator emits laser, a light spot is formed in the heavily doped region of the semi-finished silicon wafer through the vibrating mirror and the field lens, and the vibrating mirror drives the laser to scan along the path of the heavily doped region to complete the scanning of the whole heavily doped region. Preferably, the laser spot shaping device further comprises a laser shaping component for shaping the laser spot into an oval shape, a square shape, a rectangle shape or the like.
Example 2:
the method in the embodiment is different from the method in the embodiment 1 only in that laser heating is adopted during pretreatment, and the laser covers the whole semi-finished silicon wafer to finish the pretreatment of the silicon wafer.
The corresponding solar cell selective emitter manufacturing equipment is different from the manufacturing equipment in the embodiment 1 only in that the heating device is a laser heating device. The laser heating device comprises a laser generator, and can also further comprise a laser shaping component and a laser focusing component, and a light spot with a preset shape is formed by the laser shaping component. The laser heating device can be arranged above the workbench and does not influence the laser processing device.
Example 3
The method in this embodiment differs from embodiment 2 only in that the laser spot irradiated region and the heavily doped region coincide or are slightly wider than them at the time of pretreatment. The heavily doped region has a stripe shape. Preferably, the laser spot of the laser heating device irradiates a width 1.2 to 3 times the width of the strip (single strip). The laser of the laser heating device is shaped into a strip-shaped light spot with the same shape of the irradiated area by the shaping device, and heating is completed. The preheating area is more concentrated, energy waste is avoided, and the doping effect is improved.
Example 4
The method in this embodiment is similar to embodiment 3, except that during processing, the spot width of the heating laser is equal to or greater than the width (single strip) of the heavily doped region, preferably 1.2-3 times of the width, the spot width of the processing laser is equal to the width (single strip) of the heavily doped region, the heating laser and the processing laser scan the whole path of the heavily doped region, the scanning tracks of the heating laser and the processing laser are the same, and the heating laser is irradiated before the processing laser. The laser heating device is arranged above the workbench and does not influence the laser processing device.
The manufacturing apparatus of the solar cell selective emitter in this embodiment is different from the manufacturing apparatus in embodiment 1 in that the laser heating device is the same as the laser processing device in embodiment 1.
Example 5
The method in this embodiment is different from embodiments 1 and 4 only in that the scanning of the whole preset region by the light spot is realized by the relative movement of the laser processing device (and) the laser heating device and the worktable during the heavy doping (and) or preheating treatment.
Corresponding preparation equipment, differing from the equipment in examples 1 and 4 in that:
the laser processing device comprises a laser and a field lens, and also comprises an optical path transmission device, a beam expanding device and the like.
The laser heating device comprises a laser and a field lens, and also comprises an optical path transmission device, a beam expanding device and the like.
The laser heating device is arranged in front of the laser processing device, so that the laser heating device is always in front of the laser processing device when the laser heating device moves relative to the workbench.
The preparation equipment also comprises a moving device for driving the workbench to move, and the linear motion mechanism or the XY linear motion mechanism is arranged on the workbench to drive the semi-finished silicon wafer on the workbench to move to a corresponding area to complete scanning.
When the predetermined area is in the shape of a plurality of parallel strips, the work table may be a conveyor belt. The semi-finished silicon wafer is placed on the conveying belt, the heating table top is arranged below the conveying belt, the movement of the semi-finished silicon wafer is controlled in a conveying mode, and the processing and conveying efficiency is improved.
The preparation equipment can also comprise a moving device which drives the laser processing device (and) the laser heating device to integrally move, and the scanning is completed by controlling the laser processing device (and) the laser heating device to integrally move.
In order to realize the embodiment, the application also provides a preparation device of the solar cell selective emitter.
As shown in fig. 3, the apparatus for manufacturing a selective emitter of a solar cell includes a pretreatment device 100, a laser processing device 200, and a work stage 300.
The laser processing apparatus 200 is disposed above the table 300, and the pretreatment apparatus 100 is disposed near the table, for example, above, below, or around the table.
The pretreatment device 100 is used for performing a preheating treatment on a preset area of a semi-finished silicon wafer.
The pre-processing device 100 may be one of a heating table, a heating chamber, an LED lamp or infrared lamp heating device, and a laser heating device. The heating table top, the heating cavity and the LED lamp or infrared lamp tube heating device can refer to the arrangement of the heating table top, the heating cavity and the LED lamp or infrared lamp tube heating device in the prior art, and heat the semi-finished silicon wafer placed on the workbench. Specifically, the pre-treatment device 100 is a laser heating device, which includes a first laser generator 110.
The first laser generator 110 generates a first laser light to form a first spot on the diffusion layer of the semi-finished silicon wafer. The first light spot covers the diffusion layer.
As shown in fig. 4, the preprocessing unit 100 further includes a first focusing part 120. The first laser generator 110 generates a first laser, and the first laser forms a first light spot on the diffusion layer through the first focusing component 120, and the first light spot covers the diffusion layer of the semi-finished silicon wafer.
In one embodiment of the present application, as shown in FIG. 5, the pre-processing device 100 further includes a laser scanning component 130.
When the first spot does not cover the entire diffusion layer, the laser scanning unit 130 controls the movement of the first laser beam so that the first spot passes through a predetermined region of the entire diffusion layer. The laser scanning component 130 may be a galvanometer or a linear motor, the galvanometer may control the deflection of the optical path, and the linear motor may drive the laser heating device to move to scan the preset area.
In another embodiment of the present application, as shown in fig. 6, the apparatus for manufacturing a selective emitter of a solar cell further includes a first moving device 400.
The first moving device 400 is used for driving the semi-finished silicon wafer to move, so that the first light spot passes through the whole diffusion layer.
And the laser processing device 200 is used for carrying out local heavy doping on the diffusion layer of the semi-finished silicon wafer to form a heavy doping area. The local heavy doping is carried out in a laser irradiation mode.
The heavily doped region is located in the preset region, and the preset region is not smaller than the heavily doped region.
Specifically, as shown in fig. 7, the laser processing apparatus 200 includes a second laser generator 210 and a second scanning focusing part 220.
The second laser generator 210 generates a second laser, the second laser forms a second spot on the diffusion layer through the second scanning focusing part 220, and the second focusing part 220 controls the second spot to scan through the heavily doped region of the entire diffusion layer.
In one embodiment of the present application, as shown in FIG. 8, the second scan focusing component 220 is a galvanometer 221 and a field lens 222. The galvanometer 221 and the field lens 222 control the optical path of the second laser light so that the second light spot scans along the path of the heavily doped region of the diffusion layer.
In another embodiment of the present application, as shown in FIG. 9, the second scan focusing assembly 220 is a focusing mirror 223 and a linear motor 224. The focusing mirror 223 controls the second light spot of the second laser to focus on the diffusion layer to form a second light spot, and the linear motor 224 drives the laser processing device 200 to scan along the path of the heavily doped region of the diffusion layer.
The work stage 300 is used for placing a semi-finished silicon wafer.
As shown in fig. 10, the work stage 300 may include a fixing device 310, and the fixing device 310 is used to fix the semi-finished silicon wafer on the work stage 300. For example, the fixing device 310 may be a negative pressure adsorption device, which adsorbs the semi-finished silicon wafer by an adsorption force to achieve a better fixing.
In yet another embodiment of the present application, as shown in FIG. 11, the second scan focusing assembly 220 is a focusing mirror 223 and a linear motor 224. The linear motor 224 is used to drive the stage to move, so that the second light spot passes through the heavily doped region of the whole diffusion layer.
In yet another embodiment of the present application, as shown in fig. 12, the apparatus for manufacturing a selective emitter of a solar cell further includes an optical shaping device 500.
The optical shaping device 500 controls the second laser to form at least one third spot with a specific shape, such as a rectangular or square spot, on the diffusion layer, so that the heavy doping is more uniform.
And (e.g., the fourth light spots can be a plurality of strip-shaped light spots which are used for forming preset areas with the same shape, and the preset areas are directly irradiated for heating. Or a rectangular or square light spot is formed and scanned along a preset area path.
According to the preparation equipment of the solar cell selective emitter, the pre-treatment device is used for pre-treating the preset area of the semi-finished silicon wafer, then the laser processing device is used for carrying out local heavy doping on the diffusion layer of the semi-finished silicon wafer by utilizing laser to form the heavy doping area, damage of the laser to the surface of the silicon wafer in the production process of laser processing of the selective emitter solar cell can be reduced, and the photoelectric conversion efficiency of the cell is further improved.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The logic and/or steps represented in the flowcharts or otherwise described herein, e.g., an ordered listing of executable instructions that can be considered to implement logical functions, can be embodied in any computer-readable medium for use by or in connection with an instruction execution system, apparatus, or device, such as a computer-based system, processor-containing system, or other system that can fetch the instructions from the instruction execution system, apparatus, or device and execute the instructions. For the purposes of this description, a "computer-readable medium" can be any means that can contain, store, communicate, propagate, or transport the program for use by or in connection with the instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of the computer-readable medium would include the following: an electrical connection (electronic device) having one or more wires, a portable computer diskette (magnetic device), a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disc read-only memory (CDROM). Additionally, the computer-readable medium could even be paper or another suitable medium upon which the program is printed, as the program can be electronically captured, via for instance optical scanning of the paper or other medium, then compiled, interpreted or otherwise processed in a suitable manner if necessary, and then stored in a computer memory.
It should be understood that portions of the present application may be implemented in hardware, software, firmware, or a combination thereof. In the above embodiments, the various steps or methods may be implemented in software or firmware stored in memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, any one or combination of the following techniques, which are known in the art, may be used: a discrete logic circuit having a logic gate circuit for implementing a logic function on a data signal, an application specific integrated circuit having an appropriate combinational logic gate circuit, a Programmable Gate Array (PGA), a Field Programmable Gate Array (FPGA), or the like.
It should be noted that in the description of the present specification, reference to the description of the term "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Claims (19)
1. A preparation method of a solar cell selective emitter is characterized by comprising the following steps:
preheating a preset area of a semi-finished silicon wafer;
carrying out local heavy doping on a diffusion layer of the semi-finished silicon wafer to form a heavy doping region, wherein the heavy doping region is positioned in the preset region, and the preset region is not smaller than the heavy doping region;
and doping the local heavy doping by adopting a laser irradiation mode.
2. The method of claim 1, wherein the surface of the diffusion layer is covered by phosphosilicate glass or borosilicate glass, and the forming of the heavily doped region by locally heavily doping the diffusion layer of the semi-finished silicon wafer comprises:
and irradiating the diffusion layer by using laser so as to enable phosphorus atoms in the phosphorosilicate glass or boron atoms in the borosilicate glass to replace the positions of silicon atoms in the diffusion layer, and forming the heavily doped region.
3. The method of claim 1, wherein the predetermined area is the entire semi-finished silicon wafer;
or the preset region is a strip-shaped region arranged corresponding to the heavily doped region, and the width of the preset region is not less than that of the heavily doped region.
4. The method of claim 1, wherein the pre-heating process is one of hot plate heating, heating chamber heating, LED lamp or infrared tube heating, laser heating.
5. The method of claim 4, wherein the pre-heating treatment of the predetermined area of the semi-finished silicon wafer comprises:
and when the preset region is a strip-shaped region which is arranged corresponding to the heavily doped region, heating the preset region by adopting a laser heating method.
6. The method of claim 2, wherein irradiating the diffusion layer with a laser comprises:
irradiating the diffusion layer by using the light spots irradiated by the laser, and scanning the heavily doped region of the whole diffusion layer; or
And irradiating the diffusion layer by using the light spots irradiated by the laser, and controlling the semi-finished silicon wafer to move along the preset direction, so that the laser scans through the heavily doped region of the whole diffusion layer.
7. The method of claim 6, wherein the laser irradiates a spot having one of a circular, elliptical, rectangular, and square shape.
8. The method as claimed in claim 7, wherein when the heavily doped region is formed by partially heavily doping the diffusion layer of the semi-finished silicon wafer, the wavelength of the laser is 355-1500nm, and the energy density is 0.2-2.0J/cm2。
9. The method as claimed in claim 8, wherein the wavelength of the laser used in the heavily doped region is 800-1500 nm.
10. The method of claim 1, further comprising:
after the preheating treatment is carried out on the preset area of the semi-finished silicon wafer, the heat preservation treatment is carried out on the preset area.
11. An apparatus for preparing a selective emitter of a solar cell, comprising: a pretreatment device, a laser processing device and a workbench,
the pretreatment device is used for carrying out preheating treatment on a preset area of a semi-finished silicon wafer;
the laser processing device is used for carrying out local heavy doping on a diffusion layer of a preheated semi-finished silicon wafer to form a heavy doping area, wherein the heavy doping area is positioned in the preset area, the preset area is not smaller than the heavy doping area, and the local heavy doping is doped in a laser irradiation mode;
the workbench is used for placing the semi-finished silicon wafer.
12. The apparatus according to claim 11, wherein the pre-treatment device is one of a heating table, a heating chamber, an LED lamp, an infrared lamp tube heating device, and a laser heating device.
13. The apparatus for manufacturing a selective emitter of a solar cell according to claim 11, wherein the laser processing device is disposed above the worktable, and the pre-treatment device is disposed above, below or around the worktable.
14. The apparatus for manufacturing a selective emitter of a solar cell according to claim 11, wherein the pre-processing device comprises a first laser generator that generates a first laser light to form a first spot on the diffusion layer, the first spot covering the diffusion layer; alternatively, the first and second electrodes may be,
the pretreatment device comprises a first laser generator and a first focusing component, wherein the first laser generator generates first laser, the first laser passes through the first focusing component to form a first light spot on the diffusion layer, and the first light spot covers the diffusion layer.
15. The apparatus for manufacturing a selective emitter of a solar cell according to claim 14, wherein when the first light spot does not cover the entire diffusion layer, the preprocessing device further includes a laser scanning unit, and the laser scanning unit controls movement of the first laser so that the first light spot passes through the entire diffusion layer;
or the preparation equipment of the solar cell selective emitter further comprises a first moving device, wherein the first moving device is used for driving the semi-finished silicon wafer to move, so that the first light spot passes through the whole diffusion layer.
16. The apparatus for manufacturing a selective emitter of a solar cell according to claim 11, wherein the stage comprises a fixing device for fixing the semi-finished silicon wafer on the stage.
17. The apparatus according to claim 11, wherein the laser processing device comprises a second laser generator and a second scanning and focusing component, the second laser generator generates a second laser, the second laser forms a second spot on the diffusion layer through the second scanning and focusing component, and the second scanning and focusing component controls the second spot to scan through the entire diffusion layer.
18. The apparatus for manufacturing a selective emitter of a solar cell according to claim 17, wherein the second scanning and focusing component is a galvanometer and a field lens, and the galvanometer and the field lens control an optical path of the second laser light such that the second light spot scans along the diffusion layer;
or the second scanning focusing component is a focusing mirror and a linear motor, the focusing mirror controls the second light spot of the second laser to be focused on the diffusion layer, and the linear motor drives the laser processing device to scan along the diffusion layer or drives the workbench to move relative to the second light spot.
19. The apparatus for manufacturing a selective emitter of a solar cell according to claim 17, wherein the laser processing device further comprises an optical shaping device,
and the optical shaping device controls the second laser to form at least one third light spot with a specific shape on the diffusion layer, so that the third light spot irradiates partial area or all area of the diffusion layer.
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Address after: No. 142, Chunhui East Road, Xishan Economic and Technological Development Zone, Wuxi City, Jiangsu Province, 214191 Applicant after: Dier Laser Technology (Wuxi) Co.,Ltd. Address before: 214101 Fengwei Road, Xishan Economic and Technological Development Zone, Wuxi City, Jiangsu Province Applicant before: Dier Laser Technology (Wuxi) Co.,Ltd. |