CN114078977A - Preparation method and preparation equipment of solar cell selective emitter - Google Patents
Preparation method and preparation equipment of solar cell selective emitter Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 89
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 87
- 239000010703 silicon Substances 0.000 claims abstract description 87
- 238000004519 manufacturing process Methods 0.000 claims abstract description 34
- 238000009792 diffusion process Methods 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims description 40
- 230000003287 optical effect Effects 0.000 claims description 14
- 239000005388 borosilicate glass Substances 0.000 claims description 10
- 238000007493 shaping process Methods 0.000 claims description 10
- 230000004075 alteration Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 241001270131 Agaricus moelleri Species 0.000 claims description 2
- 239000005360 phosphosilicate glass Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 22
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 11
- 125000004437 phosphorous atom Chemical group 0.000 description 11
- 239000011521 glass Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 230000009471 action Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The application discloses a preparation method and preparation equipment of a solar cell selective emitter. The preparation method of the solar cell selective emitter comprises the following steps: preheating a preset area of a semi-finished silicon wafer by adopting first laser; performing local heavy doping on a diffusion layer of the semi-finished silicon wafer by adopting second laser to form a heavy doping area, wherein the heavy doping area is positioned in a preset area, and the preset area is not smaller than the heavy doping area; the first laser and the second laser are coaxial. According to the preparation method and the preparation equipment of the solar cell selective emitter, the preheating treatment is respectively carried out on the preset region of the semi-finished silicon wafer through the coaxial first laser and the coaxial second laser, and the local heavy doping is carried out on the diffusion layer of the semi-finished silicon wafer to form the heavy doping region, so that the damage of the laser to the surface of the silicon wafer in the production process of laser processing of the solar cell with the selective emitter can be reduced, and the photoelectric conversion efficiency of the cell is further improved.
Description
Technical Field
The application relates to the technical field of laser processing, in particular to a preparation method and preparation equipment of a solar cell selective emitter.
Background
After the selective emitter solar cell is subjected to texturing and diffusion on a silicon wafer, local heavy doping is carried out in the region of an electrode (a printed grid line), so that the contact resistance between the electrode and the silicon wafer can be reduced, and the photoelectric conversion efficiency of the cell is improved. The existing preparation method of the selective emitter solar cell generally uses slurry printing and then adopts methods such as high-temperature diffusion, mask etching and the like to prepare the solar cell. Application CN101950780A discloses a method for manufacturing a selective emitter cell by screen printing, which involves two screen printing and one mask diffusion, and has low productivity, which is not favorable for mass production. Application CN101820023A discloses a method for preparing a selective emitter of a crystalline silicon solar cell, which requires local heavy doping in vacuum, and has complex process steps and extremely high cost. Application CN102709387A discloses a selective emitter etching process, in which a mask is used to realize local heavy doping, the process is complex, and the alignment precision is difficult to ensure in the subsequent process. Application CN102110743A discloses a method for manufacturing a selective emitter solar cell by locally laser melting phosphorosilicate glass, the method uses laser to scan the phosphorosilicate glass on the surface of a silicon wafer to realize local heavy doping, the laser has the problem of uneven doping, and the silicon wafer can be damaged by higher laser energy.
Disclosure of Invention
The object of the present application is to solve at least to some extent one of the above mentioned technical problems.
Therefore, a first objective of the present application is to provide a method for manufacturing a selective emitter of a solar cell, which can reduce damage of laser to the surface of a silicon wafer in a production process of laser processing the selective emitter solar cell, thereby improving the photoelectric conversion efficiency of the cell.
A second object of the present application is to provide an apparatus for manufacturing a selective emitter of a solar cell.
In order to achieve the above object, an embodiment of the first aspect of the present application provides a method for preparing a selective emitter of a solar cell, including: preheating a preset area of a semi-finished silicon wafer by adopting first laser; performing local heavy doping on a diffusion layer of the semi-finished silicon wafer by adopting second laser to form a heavy doping area, wherein the heavy doping area is positioned in the preset area, and the preset area is not smaller than the heavy doping area; the first laser and the second laser are coaxial.
Optionally, the surface of the diffusion layer is covered by phosphosilicate glass or borosilicate glass, and a pre-heating process is performed on a preset region of the semi-finished silicon wafer by using a first laser, including: a galvanometer is arranged on the light path of the first laser and the second laser, and deflection of the galvanometer is controlled so that the first laser scans the whole preset area; or the semi-finished silicon wafer or the laser generating device is controlled by the moving device to move along a preset direction, so that the first laser scans the whole preset area;
and carrying out local heavy doping on the diffusion layer of the semi-finished silicon wafer by adopting second laser, wherein the local heavy doping comprises the following steps: controlling the galvanometer to deflect so that the second laser scans the whole heavily doped region; or the moving device is used for controlling the semi-finished silicon wafer or the laser generating device to move along a preset direction, so that the second laser scans the whole heavily doped region.
Optionally, the scanning tracks of the first laser and the second laser coincide, and a second time when the second laser reaches the same position in the scanning track is not earlier than a first time when the first laser reaches the same position in the scanning track.
Optionally, when the second time is later than the first time, a time difference between the second time and the first time is less than or equal to 1 ms.
Optionally, the wavelength of the first laser is 355 to 1500nm, and the wavelength of the second laser is 515 to 1500 nm.
Optionally, the preset region is a strip-shaped region corresponding to the heavily doped region, and a first width of the preset region is not less than a second width of the heavily doped region.
Optionally, the first width is 1.2 to 3 times the second width.
Optionally, the first laser is a pulse laser or a continuous laser, and the second laser is a pulse laser.
Optionally, when the first laser is a continuous laser, the power density of the first laser is in a range of 1-15 x 104W/cm2When the first laser is pulse laser, the energy density of the first laser is in the range of 0.2-1J/cm2。
Optionally, the energy density of the second laser is 0.3-2.0J/cm2。
Optionally, the light spots of the first laser and the second laser are flat-topped light spots.
Optionally, the size of the spot of the first laser is equal to the first width, and the size of the second spot is equal to the second width.
According to the preparation method of the solar cell selective emitter, the preheating treatment is respectively carried out on the preset area of the semi-finished silicon wafer through the coaxial first laser and the coaxial second laser, and the local heavy doping is carried out on the diffusion layer of the semi-finished silicon wafer to form the heavy doping area, so that the damage of laser to the surface of the silicon wafer in the production process of laser processing of the solar cell with the selective emitter can be reduced, and the photoelectric conversion efficiency of the cell is improved.
In order to achieve the above object, an embodiment of a second aspect of the present application provides a device for preparing a selective emitter of a solar cell, including: a laser generating device, a scanning focusing component and a workbench,
the laser generating device is used for generating first laser for carrying out preheating treatment on a preset region of a semi-finished silicon wafer and generating second laser for carrying out local heavy doping on a diffusion layer of the semi-finished silicon wafer, wherein the first laser and the second laser are coaxial; the scanning focusing component is used for controlling the first laser and the second laser to focus on the semi-finished silicon wafer so that the first laser performs preheating treatment on the preset region, and the second laser performs local heavy doping on a diffusion layer of the semi-finished silicon wafer; the workbench is used for placing the semi-finished silicon wafer.
Optionally, the laser generating device includes a first laser source, and the first laser source is configured to generate the first laser light and the second laser light; or
The laser generating device comprises a first laser source and a second laser source, wherein the first laser source is used for generating the first laser, and the second laser source is used for generating the second laser.
Optionally, when the laser generating device includes the first laser source and the second laser source, the first laser and the second laser are converged to be coaxial by a beam combining component.
Optionally, the scanning focusing component is a galvanometer and a field lens, the galvanometer and the field lens are disposed on the light path of the first laser and the second laser, and the field lens is an achromatic field lens for focusing and eliminating chromatic aberration of the first laser and the second laser; the galvanometer is a multi-wavelength galvanometer and is used for controlling the first laser and the second laser to scan the whole preset area in sequence.
Optionally, the scanning focusing component is a moving device and a focusing mirror, and the focusing mirror is configured to focus the first laser and the second laser; the moving device is used for controlling the semi-finished silicon wafer or the laser generating device to move along a preset direction, so that the first laser and the second laser sequentially scan the whole preset area.
Optionally, the apparatus further includes a timing controller, connected to the laser generating device, for controlling a time difference between the emission of the first laser and the emission of the second laser.
Optionally, the apparatus further comprises an optical shaping device, and the optical shaping device is configured to shape the spot shape of the first laser and/or the second laser into a flat-topped spot.
Optionally, the device further comprises an industrial personal computer, wherein the industrial personal computer is connected with the time sequence controller and is used for controlling the time sequence controller.
According to the preparation equipment of the solar cell selective emitter, the preheating treatment is carried out on the preset area of the semi-finished silicon wafer respectively through the coaxial first laser and the coaxial second laser, and the diffusion layer of the semi-finished silicon wafer is subjected to local heavy doping to form the heavy doping area, so that the damage of laser on the surface of the silicon wafer in the production process of laser processing of the solar cell with the selective emitter can be reduced, and the photoelectric conversion efficiency of the cell is improved.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a flow chart of a method of fabricating a selective emitter of a solar cell according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of an apparatus for manufacturing a selective emitter of a solar cell according to an embodiment of the present application;
fig. 3 is a schematic structural diagram of an apparatus for manufacturing a selective emitter of a solar cell according to another embodiment of the present application;
fig. 4 is a schematic structural diagram of an apparatus for manufacturing a selective emitter of a solar cell according to still another embodiment of the present application;
fig. 5 is a schematic structural diagram of an apparatus for manufacturing a selective emitter of a solar cell according to still another embodiment of the present application;
FIG. 6 is a schematic structural diagram of an apparatus for manufacturing a selective emitter of a solar cell according to an embodiment of the present application;
FIG. 7 is a schematic structural diagram of an apparatus for manufacturing a selective emitter of a solar cell according to another embodiment of the present application;
FIG. 8 is a schematic structural diagram of an apparatus for manufacturing a selective emitter of a solar cell according to still another embodiment of the present application;
fig. 9 is a schematic structural diagram of an apparatus for manufacturing a selective emitter of a solar cell according to an embodiment of the present application;
FIG. 10 is a schematic illustration of the laser path of yet another embodiment of the present application;
fig. 11 is a schematic structural diagram of an apparatus for manufacturing a selective emitter of a solar cell according to another embodiment of the present application.
Detailed Description
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
The present invention is described in further detail below with reference to specific examples, which are not to be construed as limiting the scope of the invention as claimed.
A method and an apparatus for manufacturing a selective emitter of a solar cell according to an embodiment of the present application will be described below with reference to the accompanying drawings.
The preparation principle is as follows: when a solar cell is processed, a layer of phosphorosilicate glass or borosilicate glass is formed on the surface of a silicon wafer after texturing and diffusion, phosphorus atoms in the phosphorosilicate glass or boron atoms in the borosilicate glass are used as a diffusion source, the phosphorus atoms or the boron atoms are activated through preheating treatment, and then the phosphorus atoms or the boron atoms are propelled through laser to be diffused to a certain depth in the silicon wafer to form a PN junction, so that local heavy doping is realized. Because the pulse energy required by doping is low, the repetition frequency of the used laser is high, the processing speed can be improved, and the productivity of equipment can be improved. On the other hand, the lower laser energy can reduce the damage of laser processing to the surface of the silicon wafer and improve the photoelectric conversion efficiency of the cell.
Fig. 1 is a flow chart of a method for manufacturing a selective emitter of a solar cell according to an embodiment of the present application.
As shown in fig. 1, a method for preparing a selective emitter of a solar cell includes:
and S1, performing preheating treatment on the preset area of the semi-finished silicon wafer by adopting the first laser.
Wherein, the semi-finished silicon wafer refers to a silicon wafer which is subjected to texturing (or not) and diffusion to form a diffusion layer, and a layer of phosphorosilicate glass or borosilicate glass is formed on the surface of the silicon wafer.
Through the preheating treatment of the semi-finished silicon wafer by the first laser, phosphorus atoms in phosphorosilicate glass or boron atoms in borosilicate glass on the diffusion layer can obtain a certain initial thermal movement speed, and the subsequent steps can be facilitated to push the phosphorus atoms or the boron atoms.
Specifically, there are three preheating methods:
the first mode is as follows:
a galvanometer is arranged on the optical path of the first laser and the second laser.
And controlling the galvanometer to deflect to change the light path irradiated by the first laser, thereby realizing the scanning of the whole preset area.
The second mode is as follows:
and controlling the semi-finished silicon wafer to move along the preset direction by using the moving device, and keeping the irradiation position of the first laser unchanged, so that the first laser scans the whole preset area.
The third mode is as follows:
the whole laser generating device is controlled by the moving device to move along the preset direction, and the position of the semi-finished silicon wafer is kept unchanged, so that the first laser scans the whole preset area.
And S2, carrying out local heavy doping on the diffusion layer of the semi-finished silicon wafer by adopting second laser to form a heavy doping area.
Specifically, the second laser can be used for irradiating the diffusion layer of the semi-finished silicon wafer to carry out local heavy doping to form a heavy doping region. The heavy doping treatment can be carried out simultaneously with the preheating treatment, or can be carried out after the preheating treatment, so that phosphorus atoms in the phosphorosilicate glass or boron atoms in the borosilicate glass on the diffusion layer can be kept at a certain initial thermal movement speed.
The first laser and the second laser are coaxial, that is, the irradiation tracks of the first laser and the second laser on the semi-finished silicon wafer are the same.
The surface of the diffusion layer of the semi-finished silicon wafer is covered with phosphorosilicate glass or borosilicate glass, the diffusion layer can be irradiated by utilizing second laser, and because phosphorus atoms or boron atoms have a certain initial thermal movement speed, laser propulsion is carried out in the step, so that the phosphorus atoms in the phosphorosilicate glass or the boron atoms in the borosilicate glass replace the positions of silicon atoms in the diffusion layer, and a heavily doped region is formed.
Specifically, local heavy doping is also carried out in three ways:
the first mode is as follows:
and controlling the galvanometer to deflect to change the light path irradiated by the second laser, thereby realizing the scanning of the whole heavily doped region.
The second mode is as follows:
and controlling the semi-finished silicon wafer to move along the preset direction by using the moving device, and keeping the irradiation position of the second laser unchanged, so that the second laser scans the whole heavily doped region.
The third mode is as follows:
and the whole laser generating device is controlled by the moving device to move along the preset direction, and the position of the semi-finished silicon wafer is kept unchanged, so that the second laser scans the whole heavily doped region.
In this embodiment, the scanning tracks of the first laser and the second laser are overlapped, and the second time when the second laser reaches the same position in the scanning track is not earlier than the first time when the first laser reaches the same position in the scanning track. And when the second time is later than the first time, the time difference between the second time and the first time is less than or equal to 1 ms. Preferably, the time difference is 10ps to 1 ms.
Wherein the wavelength of the first laser is 355-1500 nm, and the wavelength of the second laser is 515-1500 nm.
In an embodiment of the present application, the preset region may be a strip region disposed corresponding to the heavily doped region, and a first width of the preset region is not less than a second width of the heavily doped region, so as to achieve an energy saving purpose. Preferably, the first width is 1.2 to 3 times the second width.
The light spots of the first laser and the second laser are flat-topped light spots. The size of the spot of the first laser is equal to the first width, and the size of the second spot is equal to the second width.
It should be understood that the first laser may be a pulsed laser or a continuous laser, with the second laser preferably being a pulsed laser.
When the first laser is continuous laser, the power density of the first laser is 1-15 x 104W/cm2. When the first laser is pulse laser, the energy density of the first laser is 0.2-1J/cm2. The energy density of the second laser is 0.3-2.0J/cm2. The energy density of the second laser is reduced by about 30% relative to the prior art.
According to the preparation method of the solar cell selective emitter, the preheating treatment is respectively carried out on the preset region of the semi-finished silicon wafer through the coaxial first laser and the coaxial second laser, and the local heavy doping is carried out on the diffusion layer of the semi-finished silicon wafer to form the heavy doping region, so that the damage of the laser to the surface of the silicon wafer in the production process of laser processing of the selective emitter solar cell can be reduced, and the photoelectric conversion efficiency of the cell is further improved.
Several specific embodiments are described in detail below.
Example 1:
a preparation method of a solar cell selective emitter.
The first laser and the second laser which are coaxially arranged irradiate the preset area of the semi-finished silicon wafer in sequence, and the first laser and the second laser scan the whole preset area and the heavily doped area respectively through a vibrating mirror. In the process, laser pretreatment is completed, so that phosphorus atoms in the phosphorosilicate glass or boron atoms in the borosilicate glass obtain a certain initial thermal motion speed. And completing laser heavy doping, enabling phosphorus atoms or boron atoms activated by pretreatment to enter the surface layer of the semi-finished silicon wafer, and replacing the positions of silicon atoms with the phosphorus atoms or the boron atoms after curing to form a heavy doping region. The scanning tracks of the first laser and the second laser are the same, the time difference is less than or equal to 1ms, preferably 10 ps-1 ms, and the optimal doping effect can be realized by the lowest power combination.
In this embodiment, the width of the preset region is not less than the width of the heavily doped region, the width of the first laser spot is equal to the width of the preset region, and the width of the second laser spot is equal to the width of the heavily doped region. The second laser spot is preferably a flat-top spot, the uniformity of the spot is good, and the doping is more uniform.
Wherein the wavelength of the first laser is 355-1500 nm, preferably 1030-1080 nm. The power density of the first laser is 1-15 x 104W/cm2The energy density range of the first laser is 0.3-1J/cm2Preferably 0.7 to 1.5J/cm2. The wavelength of the second laser is 515-1500 nm, preferably 515-545 nm. The energy density of the second laser is 0.5-2.0J/cm2Preferably 0.7 to 1.5J/cm2。
The laser scanning speed can be selected according to actual requirements.
The preparation method of the present example is superior to the prior art as demonstrated by the following experimental data.
Doping the semi-finished silicon wafer to reduce the original sheet resistance of 120 omega/□ to 80 omega/□.
1) In the prior art, laser pretreatment is not carried out, only pulse laser with the wavelength of 515nm is adopted, the spot size of the second laser is 120 mu m, and the required pulse energy density is 0.9J/cm2。
By using the preparation method of the embodiment, the first laser is a 1064nm continuous wave infrared laser, the second laser is a 515nm pulse laser, the spot sizes of the two are both 120 μm, the two lasers are scanned coaxially, and the first laser leads the second laser by 5 μ s to reach a semi-finished silicon wafer.
Setting the first laser power to 10W to realize the same processing effect, and reducing the required second laser pulse energy to 0.7J/cm2(ii) a Setting the first laser power at 15W, the required energy density of the second laser pulse is reduced to 0.66J/cm2。
2) In the prior art, only pulse laser with the wavelength of 532nm is adopted without laser pretreatment, the spot size of the second laser is 120 mu m, and the requirement is metHas a pulse energy density of 0.9J/cm2。
By using the preparation method of the embodiment, the first laser is a 1064nm continuous wave infrared laser, the second laser is a 532nm pulse laser, the spot sizes of the two are both 120 μm, the two lasers are scanned coaxially, and the first laser leads the second laser by 5 μ s to reach the silicon wafer.
Setting the first laser power to 10W to realize the same processing effect, and reducing the required second laser pulse energy to 0.7J/cm2(ii) a Setting the first laser power at 15W, the required energy density of the second laser pulse is reduced to 0.66J/cm2。
3) In the prior art, laser pretreatment is not carried out, only pulse laser with the wavelength of 1064nm is adopted, the spot size of the second laser is 120 mu m, and the required pulse energy density is 1.2J/cm2。
By using the preparation method of the embodiment, the first laser is a 1064nm continuous wave infrared laser, the second laser is a 1064nm pulse laser, the spot sizes of the two are 120 μm, the two lasers are scanned coaxially, and the first laser leads the second laser for 5 μ s to reach the silicon wafer.
Setting the first laser power to 10W to realize the same processing effect, and reducing the required second laser pulse energy to 1J/cm2(ii) a Setting the first laser power at 15W, the required energy density of the second laser pulse is reduced to 0.9J/cm2。
Therefore, the same doping effect is realized, the required first laser pulse energy density is greatly reduced, and the damage of pulse laser to the surface of the silicon wafer is obviously reduced; meanwhile, as the pulse energy density is reduced, the first laser can work at a higher repetition frequency, and the production efficiency of the equipment is improved. The solar cell prepared by the method of the embodiment has the cell efficiency improved by 0.02-0.05% compared with the pure second laser processing.
The preparation equipment corresponding to the method comprises a laser source, a field lens, a scanning device and a workbench.
The laser source generates first laser for preprocessing a preset region of the semi-finished silicon wafer and irradiates a diffusion layer of the semi-finished silicon wafer to realize heavily doped second laser.
And the field lens is used for focusing the first laser and the second laser on the semi-finished silicon wafer to form a light spot.
And the scanning device is used for enabling the first laser to scan through the whole preset area, and the second laser to scan through the heavily doped area. The scanning device is a galvanometer arranged in front of the field lens.
And the workbench is used for placing the semi-finished silicon wafer.
In this embodiment, the laser source includes a first laser source and a second laser source, which form a first laser and a second laser that are coaxial through a beam combining device.
The beam combining device can be a beam combining mirror and the like in the prior art.
When the laser source is the first laser source and the second laser source that two set up respectively, still include the timing controller who is connected with both of them.
The time sequence controller is used for giving signals so as to control the emission time sequence of the first laser and the second laser, thereby realizing that the second laser and the first laser simultaneously reach the semi-finished silicon wafer or reach the semi-finished silicon wafer with a certain time difference. The scanning tracks of the two are the same.
Example 2:
the method in this example only differs from example 1 in the scanning mode.
The first laser and the second laser are controlled to move relative to the semi-finished silicon wafer, so that the first laser scans through the whole preset area, and the second laser scans through the heavily doped area. The moving direction and the moving speed can be controlled according to the actual processing requirement, such as linear movement or planar movement along a certain direction.
The preparation apparatus corresponding to the above method is different from example 1 only in the scanning device.
In this embodiment, the scanning device is a linear motion device or a two-dimensional motion module that drives the worktable to move linearly or in a plane. The scanning device drives the workbench and the semi-finished silicon wafer to move together, and scanning is completed through the irradiation positions of the first laser and the second laser.
The scanning device can also be a linear motion device or a two-dimensional motion module which drives the laser source and the related components to move linearly or in a plane, so that the first laser and the second laser move and complete scanning through the whole preset area and the heavy doping area.
In order to realize the embodiment, the application also provides a preparation device of the solar cell selective emitter.
As shown in fig. 2, the apparatus for manufacturing a selective emitter of a solar cell includes a laser generating device 100, a scanning focusing member 200, and a stage 300.
The laser generating device 100 is configured to generate a first laser for performing a pre-heating process on a preset region of the semi-finished silicon wafer, and generate a second laser for performing a local heavy doping process on a diffusion layer of the semi-finished silicon wafer. Wherein the first laser and the second laser are coaxial.
Wherein, the laser generating device 100 may be a first laser source 110, and the first laser source 110 may generate a first laser and a second laser. As shown in fig. 3, the laser generating apparatus 100 may also be composed of a first laser source 110 and a second laser source 120. The first laser source 110 is used to generate a first laser light and the second laser source 120 is used to generate a second laser light. When the laser generating apparatus 100 includes the first laser source 110 and the second laser source 120, as shown in fig. 3, the first laser light and the second laser light may be converged to be coaxial by the beam combining member 130.
And the scanning and focusing component 200 is used for controlling the first laser and the second laser to focus on the semi-finished silicon wafer so that the first laser performs preheating treatment on the preset area, and the second laser performs local heavy doping on a diffusion layer of the semi-finished silicon wafer.
In one embodiment of the present application, as shown in FIG. 4, the scan focus component 200 is a galvanometer 210 and a field lens 220.
The galvanometer 210 and the field lens 220 are disposed on the optical path of the first laser light and the second laser light.
The galvanometer 210 is a multi-wavelength galvanometer and is configured to control the first laser and the second laser to scan the entire preset region and the heavily doped region in sequence.
The field lens 220 is an achromatic field lens, and is configured to focus the first laser light and the second laser light and to eliminate chromatic aberration of the first laser light and the second laser light.
In another embodiment of the present application, the scan focusing assembly 200 is a focusing mirror 230 and a moving device 240.
The focusing mirror 230 is used for focusing the first laser light and the second laser light, and is preferably an achromatic focusing mirror for eliminating chromatic aberration of the first laser light and the second laser light.
The moving device 240 is configured to control the semi-finished silicon wafer or the laser generating device 100 to move along a preset direction, so that the first laser and the second laser sequentially scan the entire preset region and the heavily doped region. As shown in fig. 5, when the moving device 240 controls the movement of the semi-finished silicon wafer (when the semi-finished silicon wafer is fixed on the worktable 300, the worktable 300 can be moved to drive the semi-finished silicon wafer to move), the position of the laser generating device 100 remains unchanged, and the scanning is realized; as shown in fig. 6, when the whole laser generator 100 is controlled to move, the position of the semi-finished silicon wafer is kept unchanged, and scanning is realized.
The work stage 300 is used for placing a semi-finished silicon wafer.
In one embodiment of the present application, as shown in fig. 7, the apparatus for manufacturing a selective emitter of a solar cell further includes a timing controller 400.
The timing controller 400 is connected to the laser generator 100 and is configured to send a signal to control a time difference between the first laser and the second laser.
In another embodiment of the present application, as shown in fig. 8, the apparatus for manufacturing a selective emitter of a solar cell further includes an optical shaping device 500.
The optical shaping device is used for shaping the spot shape of the second laser (and) the first laser into a flat-topped spot, preferably into a rectangular or square spot.
The optical shaping device may be disposed at, but not limited to, an optical path downstream of the first laser source 110, an optical path downstream of the second laser source 120, and an optical path before the first laser light and the second laser light are converged by the beam combining member 130.
In another embodiment of the present application, as shown in fig. 9, the apparatus for manufacturing a solar cell selective emitter further includes an industrial personal computer 600.
The industrial personal computer 600 is connected to the timing controller 400, and is configured to control the timing controller 400, that is, to control a time difference between the first laser and the second laser.
Further, the industrial personal computer 600 may be further connected to a laser generating device, a scanning focusing device, and the like, for controlling a scanning path, a laser switch, and the like.
In one embodiment of the present application, the apparatus for preparing a selective emitter of a solar cell further includes a reflector, a shutter, a beam expander, and the like disposed on the optical path of the first laser and/or the second laser.
As shown in fig. 10 and 11. An infrared laser (first laser source) 110 generates infrared light, the infrared light passes through a shutter 111 and a beam expander 112 in sequence, irradiates a transmitter 113, passes through a long-wave-pass dichroic mirror 114, irradiates a dual-wavelength reflector 115, and finally irradiates a dual-wavelength galvanometer 210 and an achromatic field lens 220. The green laser (second laser source) 120 generates green light, which sequentially passes through another shutter 111, another beam expander 112, and the shaping mirror 500, then irradiates the long-wavelength dichroic mirror 114, then reflects the light to the dual-wavelength reflector 115, and finally irradiates the dual-wavelength galvanometer 210 and the achromatic field lens 220.
The timing controller 400 may send control signals to control the infrared laser and the green laser, respectively. The industrial personal computer 600 can send a galvanometer motion signal to the dual-wavelength galvanometer 210 to control the movement of the galvanometer motion signal. The industrial personal computer 600 may also send a laser trigger signal to the timing controller 400 to control the timing controller 400.
According to the preparation equipment of the solar cell selective emitter, the preheating treatment is respectively carried out on the preset region of the semi-finished silicon wafer through the coaxial first laser and the coaxial second laser, and the local heavy doping is carried out on the diffusion layer of the semi-finished silicon wafer to form the heavy doping region, so that the damage of laser to the surface of the silicon wafer in the production process of laser processing of the selective emitter solar cell can be reduced, and the photoelectric conversion efficiency of the cell is further improved.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The logic and/or steps represented in the flowcharts or otherwise described herein, e.g., an ordered listing of executable instructions that can be considered to implement logical functions, can be embodied in any computer-readable medium for use by or in connection with an instruction execution system, apparatus, or device, such as a computer-based system, processor-containing system, or other system that can fetch the instructions from the instruction execution system, apparatus, or device and execute the instructions. For the purposes of this description, a "computer-readable medium" can be any means that can contain, store, communicate, propagate, or transport the program for use by or in connection with the instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of the computer-readable medium would include the following: an electrical connection (electronic device) having one or more wires, a portable computer diskette (magnetic device), a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disc read-only memory (CDROM). Additionally, the computer-readable medium could even be paper or another suitable medium upon which the program is printed, as the program can be electronically captured, via for instance optical scanning of the paper or other medium, then compiled, interpreted or otherwise processed in a suitable manner if necessary, and then stored in a computer memory.
It should be understood that portions of the present application may be implemented in hardware, software, firmware, or a combination thereof. In the above embodiments, the various steps or methods may be implemented in software or firmware stored in memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, any one or combination of the following techniques, which are known in the art, may be used: a discrete logic circuit having a logic gate circuit for implementing a logic function on a data signal, an application specific integrated circuit having an appropriate combinational logic gate circuit, a Programmable Gate Array (PGA), a Field Programmable Gate Array (FPGA), or the like.
It should be noted that in the description of the present specification, reference to the description of the term "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Claims (20)
1. A preparation method of a solar cell selective emitter is characterized by comprising the following steps:
preheating a preset area of a semi-finished silicon wafer by adopting first laser;
performing local heavy doping on a diffusion layer of the semi-finished silicon wafer by adopting second laser to form a heavy doping area, wherein the heavy doping area is positioned in the preset area, and the preset area is not smaller than the heavy doping area;
the first laser and the second laser are coaxial.
2. The method of claim 1, wherein the surface of the diffusion layer is covered with phosphosilicate glass or borosilicate glass, and the pre-heating treatment of the predetermined area of the semi-finished silicon wafer with the first laser comprises:
a galvanometer is arranged on the light path of the first laser and the second laser, and deflection of the galvanometer is controlled so that the first laser scans the whole preset area; or
Controlling the semi-finished silicon wafer or the laser generating device to move along a preset direction by using a moving device so that the first laser scans the whole preset area;
and carrying out local heavy doping on the diffusion layer of the semi-finished silicon wafer by adopting second laser, wherein the local heavy doping comprises the following steps:
controlling the galvanometer to deflect so that the second laser scans the whole heavily doped region; or
And controlling the semi-finished silicon wafer or the laser generating device to move along a preset direction by using the moving device so that the second laser scans the whole heavily doped region.
3. The method of claim 1, wherein the first laser coincides with a scan trajectory of the second laser, and a second time that the second laser reaches a same location in the scan trajectory is no earlier than a first time that the first laser reaches the same location in the scan trajectory.
4. The method of claim 3, wherein a time difference between the second time and the first time is less than or equal to 1ms when the second time is later than the first time.
5. The method according to claim 1, wherein the first laser has a wavelength of 355 to 1500nm, and the second laser has a wavelength of 515 to 1500 nm.
6. The method of claim 1, wherein the predetermined region is a stripe-shaped region disposed corresponding to the heavily doped region, and a first width of the predetermined region is not less than a second width of the heavily doped region.
7. The method of claim 6, wherein the first width is 1.2-3 times the second width.
8. The method of claim 1, wherein the first laser is a pulsed laser or a continuous laser and the second laser is a pulsed laser.
9. The method of claim 8, wherein the first laser has a power density in a range of 1-15 x 10 when the first laser is a continuous laser4W/cm2When the first laser is pulse laser, the energy density of the first laser is in the range of 0.2-1J/cm2。
10. The method of claim 8, wherein the second laser has an energy density of 0.3 to 2.0J/cm2。
11. The method of claim 1, wherein the spots of the first laser and the second laser are flat-topped spots.
12. The method of claim 6, wherein a spot size of the first laser is equal to the first width and a spot size of the second laser is equal to the second width.
13. An apparatus for preparing a selective emitter of a solar cell, comprising: a laser generating device, a scanning focusing component and a workbench,
the laser generating device is used for generating first laser for carrying out preheating treatment on a preset region of a semi-finished silicon wafer and generating second laser for carrying out local heavy doping on a diffusion layer of the semi-finished silicon wafer, wherein the first laser and the second laser are coaxial;
the scanning focusing component is used for controlling the first laser and the second laser to focus on the semi-finished silicon wafer so that the first laser performs preheating treatment on the preset region, and the second laser performs local heavy doping on a diffusion layer of the semi-finished silicon wafer;
the workbench is used for placing the semi-finished silicon wafer.
14. The apparatus for manufacturing a solar cell selective emitter according to claim 13, wherein the laser generating device includes a first laser source for generating the first laser light and the second laser light; or
The laser generating device comprises a first laser source and a second laser source, wherein the first laser source is used for generating the first laser, and the second laser source is used for generating the second laser.
15. The apparatus for manufacturing a solar cell selective emitter according to claim 14, wherein when the laser generating device includes the first laser source and the second laser source, the first laser light and the second laser light are converged to be coaxial by a beam combining part.
16. The apparatus for manufacturing a selective emitter of a solar cell according to claim 13, wherein the scanning focusing means is a galvanometer mirror and a field lens,
the galvanometer and the field lens are arranged on light paths of the first laser and the second laser, and the field lens is an achromatic field lens and is used for focusing and eliminating chromatic aberration of the first laser and the second laser;
the galvanometer is a multi-wavelength galvanometer and is used for controlling the first laser and the second laser to scan the whole preset area in sequence.
17. The apparatus for manufacturing a solar cell selective emitter according to claim 13, wherein the scanning and focusing means is a moving device and a focusing mirror,
the focusing mirror is used for focusing the first laser and the second laser;
the moving device is used for controlling the semi-finished silicon wafer or the laser generating device to move along a preset direction, so that the first laser and the second laser sequentially scan the whole preset area.
18. The apparatus for fabricating a selective emitter of a solar cell according to claim 13, further comprising a timing controller,
and the time sequence controller is connected with the laser generating device and is used for controlling the time difference of the emission of the first laser and the second laser.
19. The apparatus for manufacturing a selective emitter for a solar cell according to claim 13, wherein said apparatus further comprises an optical shaping device,
the optical shaping device is used for shaping the spot shape of the first laser and/or the second laser into a flat-top spot.
20. The apparatus for manufacturing a selective emitter of a solar cell according to claim 18, further comprising an industrial personal computer,
and the industrial personal computer is connected with the time sequence controller and is used for controlling the time sequence controller.
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