CN110544730A - Selective emitter, preparation method thereof and selective emitter battery - Google Patents
Selective emitter, preparation method thereof and selective emitter battery Download PDFInfo
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- CN110544730A CN110544730A CN201910758360.0A CN201910758360A CN110544730A CN 110544730 A CN110544730 A CN 110544730A CN 201910758360 A CN201910758360 A CN 201910758360A CN 110544730 A CN110544730 A CN 110544730A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 51
- 239000010703 silicon Substances 0.000 claims abstract description 51
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 20
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 20
- 239000011574 phosphorus Substances 0.000 claims abstract description 20
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052796 boron Inorganic materials 0.000 claims abstract description 16
- 230000009471 action Effects 0.000 claims abstract description 5
- 230000001186 cumulative effect Effects 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 5
- 238000009792 diffusion process Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910015845 BBr3 Inorganic materials 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Silicon Compounds (AREA)
Abstract
The invention relates to a selective emitter, a preparation method thereof and a selective emitter battery. The preparation method of the selective emitter comprises the following steps: covering a heat conducting plate on a silicon wafer with a phosphorus source or a boron source on the surface; and scanning the heat conducting plate by adopting laser to enable the silicon wafer to form a light doped region and a heavy doped region under the action of the laser. The invention discloses a method for preparing a silicon chip, which comprises the steps of innovatively covering a heat conducting plate on a silicon chip with a phosphorus source or a boron source on the surface, then scanning the heat conducting plate by laser, and accumulating a certain temperature by the heat conducting plate, thereby transferring the energy of the laser to the silicon chip, realizing light doping and heavy doping of the silicon chip, avoiding damaging the silicon chip, and improving the performance and the conversion efficiency of a battery. In addition, the preparation method only adopts the laser and the heat conducting plate, does not need additional equipment and auxiliary materials, is simple and convenient, and is suitable for industrial industrialization.
Description
Technical Field
The invention relates to the technical field of photovoltaic solar cells, in particular to a selective emitter, a preparation method of the selective emitter and a selective emitter cell.
Background
The solar energy is used as a green new energy, and has the advantages of inexhaustibility, cleanness, environmental protection and the like. The manufacturing cost of the solar cell is further reduced, and the improvement of the conversion efficiency of the solar cell is the premise of ensuring the stable development of solar energy.
Selective emitter cells have been developed and widely used for higher cell conversion efficiency. The structure of the selective emitter cell is: and forming a heavily doped deep diffusion region under the electrode grid line and near the electrode grid line, and forming a lightly doped shallow diffusion region in the illumination region. Therefore, the effect of different doping concentrations is realized in the grid line contact area and the illumination area, the metalized contact resistance is reduced, the surface recombination is reduced, and the conversion efficiency of the battery is improved.
The existing diffusion doping process of the selective emitter generally comprises the steps of performing high-temperature diffusion in a diffusion furnace to form a lightly doped region, and then performing laser doping to form a heavily doped region. However, the diffusion doping process is complicated and requires more equipment and auxiliary materials.
Disclosure of Invention
Therefore, it is necessary to provide a selective emitter, a method for manufacturing the same, and a selective emitter cell, which are directed to the problems of complicated process steps and more required equipment and auxiliary materials in the diffusion doping process of the conventional selective emitter cell.
A preparation method of a selective emitter comprises the following steps:
Covering a heat conducting plate on a silicon wafer with a phosphorus source or a boron source on the surface;
And scanning the heat conducting plate by adopting laser so as to enable the silicon wafer to form a light doped region and a heavy doped region under the action of the laser.
In one embodiment, the equivalent thermal conductivity of the thermally conductive plate is between 10MW/m DEG C and 30MW/m DEG C.
In one embodiment, the thermally conductive plate completely covers the silicon wafer.
In one embodiment, the thickness of the heat conducting plate is 10-1000 μm.
In one embodiment, the accumulated temperature of the laser scanning heat conducting plate is 800-1800 ℃.
In one embodiment, the vertical distance between the heat conducting plate and the silicon wafer is 0-50 μm.
In one embodiment, in the scanning step, the power of the laser is 30W to 100W.
In one embodiment, the light spot of the laser is a square light spot, and the side length of the square light spot is 40-2000 μm.
In one embodiment, the selective emitter is prepared by any one of the preparation methods of the selective emitter.
The invention also provides a selective emitter battery which comprises the selective emitter.
In the prior art, a diffusion device for performing diffusion through a diffusion furnace consists of a furnace tube, a boron/phosphorus source cylinder and a tail gas cylinder. The diffusion doping process is as follows: the liquid boron/phosphorus source in the boron/phosphorus bottle is gasified by carrier gas (nitrogen), then is sent into a diffusion furnace through a gas inlet on the wall of the furnace tube, and then is deposited and diffused under the atmosphere of nitrogen and oxygen to form a light doping area, and then a heavy doping area is formed by adopting laser doping. The gas circuit system is complex and heavy in process, more equipment and auxiliary materials are needed, and BBr3/POCl3 has strong corrosivity and toxicity. In addition, the inventor of the present invention also finds that the doping step using laser in the above process seriously damages the silicon wafer.
Based on the above, the inventor of the present invention abandons the traditional preparation method of selective emitter, and continuously studies, innovatively covers the heat conducting plate on the silicon wafer with the surface containing phosphorus source or boron source, and then scans the heat conducting plate by laser, and the heat conducting plate accumulates certain temperature, so that the energy of the laser is transferred to the silicon wafer, the light doping and heavy doping of the silicon wafer are realized, the silicon wafer is not damaged, and the performance and conversion efficiency of the battery are improved.
In addition, the preparation method only adopts the laser and the heat conducting plate, does not need additional equipment and auxiliary materials, is simple and convenient, and is suitable for industrial industrialization.
Drawings
FIG. 1 is a pictorial view of a selective emitter in accordance with one embodiment of the present invention;
fig. 2 is a schematic diagram of a selective emitter according to another embodiment of the present invention.
Detailed Description
the present invention will be described in detail with reference to the accompanying drawings, which illustrate embodiments of the present invention. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
The preparation method of the selective emitter in one embodiment of the invention comprises the following steps:
And S1, covering the heat conducting plate on the silicon wafer with the surface containing the phosphorus source or the boron source.
The preparation method of the silicon wafer with the surface containing the phosphorus source or the boron source comprises the following steps: and (3) manufacturing a phosphorus source or a boron source on the surface of the silicon wafer after texturing.
Preferably, the preparation steps of the silicon wafer with the surface containing the phosphorus source or the boron source are as follows: and coating or depositing silicon dioxide containing a phosphorus source or a boron source on the surface of the textured silicon wafer by spin coating or APCVD (advanced chemical vapor deposition), wherein the concentration of the phosphorus source or the boron source is 0-30%. At this time, the surface of the silicon wafer after texturing is covered with a layer of silicon dioxide containing a phosphorus source or a boron source.
In one embodiment, the equivalent thermal conductivity of the plate is between 10 MW/m.deg.C and 30 MW/m.deg.C. The heat conducting plate can be made of graphene, graphite, carbon fiber or C/C composite material. Or, a liquid mixture of various inorganic elements is used as a heat transfer medium to be injected into other nonmetal plate-shaped cavities such as glass and the like, and after sealing and forming, the heat conducting plate with high-speed heat transfer performance is formed.
In one embodiment, the thermally conductive plate completely covers the silicon wafer. Therefore, the silicon wafer can be controlled within the protection range of the heat conducting plate, and the heat conducting plate does not need to be moved when laser scanning is carried out, so that the laser scanning operation is convenient.
In one embodiment, the thickness of the heat conducting plate is 10 μm to 1000 μm, and the cumulative temperature of the laser scanning heat conducting plate is 800 ℃ to 1800 ℃, i.e., the cumulative temperature of the heat conducting plate when the laser scanning heat conducting plate is scanned is 800 ℃ to 1800 ℃. And controlling the accumulated temperature of the laser scanning heat-conducting plate and controlling the thickness of the heat-conducting plate to match with the laser scanning to manufacture a light doping area and a heavy doping area of the battery.
And S2, scanning the heat conducting plate by using laser to enable the silicon wafer to form a light doped region and a heavy doped region under the action of the laser.
The principle of preparing the selective emitter of the invention is as follows: transferring the boron source or the phosphorus source on the surface of the silicon wafer to the silicon wafer through the heat conducting plate by utilizing high-temperature heating of laser to form a light doped region, and further pushing the silicon source or the phosphorus source in the light doped region into the silicon wafer to form a heavy doped region under the action of the laser.
The method adopts a laser scanning heat-conducting plate, and the specific steps of forming a light-doped area and a heavy-doped area on a silicon wafer are as follows: and (2) adopting a laser scanning heat-conducting plate to quickly diffuse a silicon source or a phosphorus source on the surface of the silicon wafer into the silicon wafer, then covering the super-heat plate on a light-doped area of the silicon wafer, and continuously adopting laser scanning to form a heavy-doped area. Or the heat conducting plate receives different laser heat, the area with lower heat is a light doped area, and the area with higher heat is a heavy doped area. The form in which the thermally conductive plate receives the different laser heat is not limited herein.
In one embodiment, the vertical distance between the heat conducting plate and the silicon wafer is 0-50 μm. When the vertical distance is 0, the heat conducting plate is in direct contact with the silicon wafer; and when the vertical distance is not 0, the heat conducting plate and the silicon wafer are arranged at a spacing distance.
In one embodiment, the power of the laser in the scanning step is 30W to 100W.
In one embodiment, the laser spot is a square spot, and the side length of the square spot is 40-2000 μm. It can be understood that when a lightly doped region is formed on the silicon wafer, a laser spot with a larger side length can be used for scanning, which is more convenient and time-saving, and when a heavily doped region is formed on the silicon wafer, a laser spot with a smaller side length can be used.
The selective emitter according to an embodiment of the present invention is prepared by any one of the above methods for preparing a selective emitter.
The invention also provides a selective emitter battery of an embodiment, which sequentially comprises a silicon substrate, the selective emitter and a metal electrode.
The following are specific examples.
Example 1
a P-type silicon wafer with the resistivity of 0.5 is selected, alkaline texturing is carried out to form a pyramid textured surface, and then a layer of phosphorosilicate glass with the phosphorus source concentration of 3% is deposited through APCVD.
After the above operations are completed, a heat conducting plate with the thickness of 100 micrometers is directly contacted and covered on a silicon chip, a laser spot with the thickness of 500 micrometers is selected, the power is 50w, the heat conducting plate is scanned to process a first group of layers (lightly doped regions), the formed sheet resistance is 120ohm/sq, then the laser spot with the thickness of 120 micrometers is continuously adopted, the power is 60w, the heat conducting plate is scanned to perform doping (heavily doped regions) on a second group of layers and form a selective emitter, and the sheet resistance after doping is 80 ohm/sq.
And finally, printing a metal electrode by adopting a screen printing mode, and sintering to obtain the selective emitter battery. The physical diagram of the cell is shown in fig. 1, and no damage trace exists on the silicon wafer.
Example 2
A P-type silicon wafer with the resistivity of 0.5 is selected, alkaline texturing is carried out to form a pyramid textured surface, and then a layer of phosphorosilicate glass with the phosphorus source concentration of 3% is deposited through APCVD.
After the operation is finished, a heat conducting plate with the thickness of 50 micrometers is directly contacted and covered on a silicon chip, a laser spot with the thickness of 1000 micrometers is selected, the power is 30w, the heat conducting plate is scanned to process a first group of layers (lightly doped regions), the formed sheet resistance is 120ohm/sq, then the laser spot with the thickness of 120 micrometers is continuously adopted, the power is 80w, the heat conducting plate is scanned to dope a second group of layers (heavily doped regions) and form a selective emitter, and the sheet resistance after the doping is 80 ohm/sq.
And finally, printing a metal electrode by adopting a screen printing mode, and sintering to obtain the selective emitter battery.
Comparative example 1
The selective emitter cell of comparative example 1 was prepared in the same manner as in example 1, except that: when the doping of the second group of layers (heavily doped regions) is carried out, the laser is directly adopted to scan the silicon wafer without covering the heat conducting plate. The physical diagram of the cell is shown in fig. 2, and a trace of laser damage appears on the silicon wafer.
Performance testing
The selective emitter cells prepared in example 1 and comparative example 1 were subjected to performance tests, and the test data are shown in table 1. Wherein Uoc is open-circuit voltage, Isc is open-circuit current, FF is battery filling factor, and Eta is conversion efficiency.
TABLE 1 Battery Performance data
| item | Uoc | Isc | FF | Eta |
| Example 1 | 0.681V | 10.152A | 81.42％ | 22.01％ |
| Comparative example 1 | 0.6684V | 10.133A | 81.31％ | 21.85％ |
As can be seen from table 1, each performance parameter of the selective emitter cell prepared in example 1 is superior to that of the cell of comparative example 1. The conversion efficiency of the battery is greatly improved.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A preparation method of a selective emitter is characterized by comprising the following steps:
Covering a heat conducting plate on a silicon wafer with a phosphorus source or a boron source on the surface;
And scanning the heat conducting plate by adopting laser so as to enable the silicon wafer to form a light doped region and a heavy doped region under the action of the laser.
2. The method of claim 1, wherein the thermal conductive plate has an equivalent thermal conductivity of 10MW/m ° c to 30MW/m ° c.
3. The method of claim 1, wherein the thermally conductive plate completely covers the silicon wafer.
4. The method of claim 1, wherein the thickness of the thermal conductive plate is 10 μm to 1000 μm.
5. The method of claim 1, wherein the cumulative temperature of the laser scanning thermal conductive plate is 800 ℃ to 1800 ℃.
6. The method of claim 1, wherein a vertical distance between the thermal conductive plate and the silicon wafer is 0-50 μm.
7. The method for preparing a selective emitter according to claim 1, wherein the power of the laser in the scanning step is 30W to 100W.
8. The method for preparing the selective emitter according to any one of claims 1 to 8, wherein the laser spot is a square spot, and the side length of the square spot is 40 μm to 2000 μm.
9. A selective emitter is characterized by being prepared by the preparation method of the selective emitter according to any one of claims 1 to 8.
10. a selective emitter cell comprising the selective emitter of claim 9.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910758360.0A CN110544730A (en) | 2019-08-16 | 2019-08-16 | Selective emitter, preparation method thereof and selective emitter battery |
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| CN201910758360.0A CN110544730A (en) | 2019-08-16 | 2019-08-16 | Selective emitter, preparation method thereof and selective emitter battery |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111106188A (en) * | 2019-12-17 | 2020-05-05 | 晶澳（扬州）太阳能科技有限公司 | N-type battery, preparation method of selective emitter of N-type battery and N-type battery |
| CN111180530A (en) * | 2019-12-27 | 2020-05-19 | 天津爱旭太阳能科技有限公司 | Preparation method of selective emitter battery |
| CN114078977A (en) * | 2020-12-18 | 2022-02-22 | 帝尔激光科技(无锡)有限公司 | Preparation method and preparation equipment of solar cell selective emitter |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010003834A (en) * | 2008-06-19 | 2010-01-07 | Tokyo Univ Of Agriculture & Technology | Impurity doping method for semiconductor used for solar power generation |
| CN102282650A (en) * | 2009-01-16 | 2011-12-14 | 新南创新私人有限公司 | Solar cell methods and structures |
| CN102916087A (en) * | 2012-11-09 | 2013-02-06 | 上饶光电高科技有限公司 | Solar cell and manufacturing method thereof |
| WO2016107661A1 (en) * | 2014-12-30 | 2016-07-07 | Merck Patent Gmbh | Laser doping of semiconductors |
| FR3048819A1 (en) * | 2016-09-28 | 2017-09-15 | Commissariat Energie Atomique | LASER IRRADIATION DOPING COMPENSATION FOR THE MANUFACTURE OF HETEROJUNCTION SOLAR CELLS |
-
2019
- 2019-08-16 CN CN201910758360.0A patent/CN110544730A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010003834A (en) * | 2008-06-19 | 2010-01-07 | Tokyo Univ Of Agriculture & Technology | Impurity doping method for semiconductor used for solar power generation |
| CN102282650A (en) * | 2009-01-16 | 2011-12-14 | 新南创新私人有限公司 | Solar cell methods and structures |
| CN102916087A (en) * | 2012-11-09 | 2013-02-06 | 上饶光电高科技有限公司 | Solar cell and manufacturing method thereof |
| WO2016107661A1 (en) * | 2014-12-30 | 2016-07-07 | Merck Patent Gmbh | Laser doping of semiconductors |
| FR3048819A1 (en) * | 2016-09-28 | 2017-09-15 | Commissariat Energie Atomique | LASER IRRADIATION DOPING COMPENSATION FOR THE MANUFACTURE OF HETEROJUNCTION SOLAR CELLS |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111106188A (en) * | 2019-12-17 | 2020-05-05 | 晶澳（扬州）太阳能科技有限公司 | N-type battery, preparation method of selective emitter of N-type battery and N-type battery |
| CN111106188B (en) * | 2019-12-17 | 2022-03-18 | 晶澳（扬州）太阳能科技有限公司 | N-type battery, preparation method of selective emitter of N-type battery and N-type battery |
| CN111180530A (en) * | 2019-12-27 | 2020-05-19 | 天津爱旭太阳能科技有限公司 | Preparation method of selective emitter battery |
| CN114078977A (en) * | 2020-12-18 | 2022-02-22 | 帝尔激光科技(无锡)有限公司 | Preparation method and preparation equipment of solar cell selective emitter |
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