CN102842646A - Preparation method of interdigitated back-contact battery based on N-type substrate - Google Patents
Preparation method of interdigitated back-contact battery based on N-type substrate Download PDFInfo
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Abstract
The invention relates to a preparation method of an interdigitated back-contact battery based on an N-type substrate. An emitting electrode is prepared by utilizing a laser doping method. The preparation method comprises following steps of texturing the surface of a silicon sheet, plating a medium membrane on the surface of the silicon sheet, heavily doping the N<+> area and the P<+> area locally on the back surface by utilizing the laser, completely lightly doping the N<+> area on the front surface by utilizing the laser, removing the surface medium membrane, preparing a passivation membrane on the surface of the silicon sheet, preparing an antireflection membrane on the surface of the silicon sheet and completing the preparation of a positive electrode and a negative electrode. According to the preparation method, by utilizing laser to scan the silicon sheet with relevant impurity sources spirally coated on the surface, the surface of the silicon sheet is heated to a molten state by utilizing the high energy of the laser, so that the impurities can be well diffused into the body, the doped area can be well controlled, the non-doped area is free from producing lattice defects, and the process is simple, reasonable, safe and reliable.
Description
Technical field
The invention belongs to technical field of solar cells, be specifically related to a kind of preparation method of the IBC battery based on N type substrate.
Background technology
When non-renewable energy resources such as electric power, coal, oil signal for help repeatedly, when energy problem became the bottleneck of restriction international community economic development day by day, Renewable Energy Development had become global key subjects.This wherein, solar energy has inexhaustible, nexhaustible huge advantage, so solar energy is a main direction of regenerative resource.Solar cell especially can be applied to outlying district, high mountain, desert because it is used widely, makes large-scale power station and enjoys people's favor.
Solar cell simple in structure is exactly a P-N knot, when solar light irradiation when semiconductor P-N ties, form new electron-hole pair.Flow to two districts under P-N knot effect of electric field in these electronics and hole, promptly electronics flows to hole, N district by the P district and then flows to the P district by the N district, just form electric current behind the connection circuit.
The solar cell material of large-scale production at present mainly is to use the crystalline silicon material of matrix as the p type, and the phosphorous diffusion through high temperature forms the P-N knot then.The stable processing technique property of its volume production is good, but conversion efficiency has almost reached bottleneck.So people begin research and development low cost, high efficiency solar cell.
Because conventional solar cell sensitive surface has the area about 8% to be blocked by metal grid lines approximately, in order to reduce positive shading area, increase the photogenerated current of battery, people consider to be placed on positive electrode and negative electrode the back side of battery, become to carry on the back to contact battery.The IBC battery also is a kind of of back of the body contact battery.
The IBC battery just had the researcher to begin one's study as far back as 1977, and appointing up to now so is the focus of solar cell industry research.Silion cell with respect to routine; The advantage of IBC battery clearly; Mainly can show the following aspects: the basis material of (1) IBC battery is the n type crystalline silicon; Minority carrier life time is high, is applicable to the preparation high-efficiency battery, particularly for the battery structure of this p-n junction of IBC battery on back of the body surface; Must move to the p-n junction on battery back of the body surface and just can be utilized because result from the photo-generated carrier of front surface, higher minority carrier life time is to reduce photo-generated carrier compound assurance in solar battery surface and body; (2) the boron content of n mold base is extremely low, does not therefore have p mold base material obvious by boron oxygen to the photo attenuation that causes, and is more obvious to the improved efficiency that encapsulates the back assembly; (3) front of IBC battery does not have electrode, has reduced the shading area, has increased photogenerated current, the back side that is distributed in battery of positive and negative electrodes submission finger-like; (4) the IBC battery is easy to encapsulation, compares with conventional batteries, need not to receive the negative pole of preceding a slice intersection the positive pole of back a slice, easy operating.Homogeneous attractive in appearance satisfies consumer's esthetic requirement simultaneously.
The conventional method for preparing p type emitter is to use High temperature diffusion boron source, specifically is exactly through adopting high-purity N
2Carry BBr
3Method.And POCl
3Similar, BBr
3Can reaction generate B
2O
3, under the situation of high temperature, diffuse into the inner p of formation of silicon chip type emitter.But there are several problems in this method: the P of (1) and gaseous state
2O
5Difference, B
2O
3Boiling point higher, at high temperature still liquid, be difficult to cover equably silicon chip surface, therefore the uniformity of diffusion is difficult to control.(2) because the temperature of boron diffusion is more taller than phosphorous diffusion, not only waste resource, and very big to the silicon chip influence, and it is serious to cause the silicon chip minority carrier life time to descend.
The research and development that are applied to laser technology in solar cell are not news already, and its selectivity, contactless processing technology have also surmounted other technologies.Use laser technology can well simplify the production procedure of IBC battery.
Summary of the invention
The object of the present invention is to provide a kind of based on N type substrate prepare the IBC battery preparation method of emitter by laser doping, this method is safe and reliable, cost is low, goes for producing line large-scale production.
For achieving the above object, the technical scheme that the present invention takes is: a kind of preparation method of the IBC solar cell based on N type substrate, it is characterized in that, and use the method for laser doping to prepare emitter, specifically may further comprise the steps:
⑴ carry out the surface-texturing processing and carry out chemical cleaning crystal silicon chip, prepares deielectric-coating in both sides then, makes the silicon chip surface possess hydrophilic property;
⑵ prepare local N in the method for the crystalline silicon back of the body surface by utilizing laser scanning that scribbles the phosphorus source
+The heavy doping structure, and cleaning-drying is handled;
⑶ prepare local P in the method for the crystalline silicon back of the body surface by utilizing laser scanning that scribbles the boron source
+The heavy doping structure, and cleaning-drying is handled;
⑷ prepare N in the method for the full laser scanning of crystalline silicon front surface utilization that scribbles the phosphorus source
+The light dope structure;
⑸ remove the deielectric-coating of silicon chip both sides, and cleaning-drying is handled;
⑹ prepare passivating film in the silicon chip both sides;
⑺ prepare antireflective coating in the silicon chip both sides;
⑻ at the silicon chip back side manufacture batteries positive and negative electrode; And sintering.
In above-mentioned preparation method's process, can adjust arbitrarily the order of said step ⑵, ⑶ and ⑷.
As a kind of preferred, said step ⑵ and the described phosphorus of step ⑷ source are the mixed solution or the phosphorosilicate glass of phosphoric acid and water and alcohol.
As a kind of preferred, the described boron of said step ⑶ source is BAS or Pyrex.
As a kind of preferred, the described deielectric-coating of said step ⑴ is the SiO that wet-chemical oxidation or dry oxidation generate
2Perhaps SiNx film.
As a kind of preferred, the laser parameter of said step ⑵, ⑶ and the described laser scanning of ⑷ is: the pulse of power 1W-10W, wavelength 200nm-600nm.
As a kind of preferred, the described passivating film of said step ⑹ comprises SiO
2, Al
2O
3Or α-Si film.
As a kind of preferred, the described antireflective coating of said step ⑺ comprises SiNx, TiO
2Or MgF
2Film.
As a kind of preferred, the described method for preparing the battery positive and negative electrode of said step ⑻ comprises silk screen printing, plating or chemical plating.
It is N type crystalline silicon sheet that the present invention adopts basis material, and its minority carrier life time height and photo attenuation are little, and preparation battery and package assembling are all had superiority.The purpose of surface-texturing is to increase the absorption of silicon chip to light, plays the effect of " falling into light "; The purpose of chemical cleaning is to remove the impurity of silicon chip surface; The effect of deielectric-coating is the hydrophily that increases silicon chip surface, makes the phosphorus source and the boron source of back spin coating can be evenly distributed in silicon chip surface.The phosphorus source and the boron source of silicon chip surface spin coating be safe and reliable, it is little to pollute, and for laser doping provides enough dopants, need not pass through pyroprocess and be evenly distributed, and the uniformity after mixing is guaranteed to some extent; Adopt laser doping to prepare emitter simultaneously, with traditional boiler tube diffusion compare convenient and swift, and zone that can the better controlled laser doping, control side hinders, and is convenient to large-scale production.
The present invention adopts the front and rear surfaces of passivating film passivation battery can effectively reduce the recombination rate of surperficial minority carrier, improves surperficial minority carrier life time, and the double membrane structure on back of the body surface can improve the reflection of light rate to the long-wave band that sees through silicon chip simultaneously.The purpose for preparing antireflective coating at tow sides then is in order to reduce the reflection of photon, to increase the absorption to photon, increasing photogenerated current and then increase the final conversion efficiency of battery.The shading area has been reduced at the back side that the positive and negative electrode of battery all is made in, and has increased photogenerated current, can better collect the electric current that silicon chip produces, and between metal and silicon chip, forms good Ohmic contact simultaneously.
The present invention adopts laser doping to prepare emitter.Utilize laser to have the silicon chip of corresponding impurity source to scan to surperficial spin coating, principle is exactly to utilize the high-energy of laser to make silicon chip surface be heated to molten condition, thereby impurity can well be diffused in the body.This method technology is simple, device security, and can not produce lattice defect to the place that does not have to mix.The advantage of maximum that adopts the method for laser doping to prepare p+ layer and the n+ layer on IBC battery back of the body surface is exactly can the better controlled doped regions, and only the region doping in laser scanning gets final product.
Description of drawings
Fig. 1 is the preparation flow sketch map of one embodiment of the present invention based on the IBC solar cell of N type substrate.
Fig. 2 is the sketch map of a kind of IBC solar cell based on N type substrate of one embodiment of the present invention.Wherein, 1 is the positive pole of battery, and 2 is the negative pole of battery.
Embodiment
The present invention will be described below to enumerate specific embodiment.It is pointed out that embodiment only is applicable to is described further the present invention, does not represent protection scope of the present invention, and nonessential modification and adjustment that other people prompting according to the present invention is made still belong to protection scope of the present invention.
Embodiment 1:
The preparation method of the present invention proposes a kind of N type IBC efficient solar battery based on the surperficial PN junction of the laser doping preparation back of the body is an example with the n type single crystal silicon solar cell below, explains that its preparation process is following:
⑴ adopt the mixed aqueous solution of NaOH, IPA and making herbs into wool additive to N type silicon chip, and (wherein: the NaOH mass fraction is 1.3%; The IPA volume fraction is 0.3%; Making herbs into wool additive volume fraction is 0.03%) carry out surface treatment, make the suede structure of uniform Pyramid; Adopt PECVD method (plasma enhanced chemical vapor deposition) just carrying on the back the SiNx deielectric-coating of two surface preparation again.
⑵ carry on the back surperficial spin coating phosphoric acid-ethanol mixed aqueous solution (phosphoric acid: ethanol: water=24: 9: 10) at silicon chip; With laser local N is carried out on silicon chip back of the body surface then
+Heavy doping, adopting wavelength is the Paladin UV ultraviolet source of 355nm, and sweep speed is 3m/s, and power is 4W, is laser focusing that the lasing light emitter of 30um scans the local N of formation to silicon chip surface to diameter
+Emitter is processed in heavy doping, and makes it to form good ohmic contact with metal electrode; Clean again and dry up.Require square resistance to be not more than 60 Ω/.
⑶ carry on the back surperficial spin coating concentration at silicon chip is 5% boric acid aqueous solution; With laser local P is carried out on silicon chip back of the body surface then
+Heavy doping, adopting wavelength is the Paladin UV ultraviolet source of 355nm, and sweep speed is 2m/s, and power is 4W, is laser focusing that the lasing light emitter of 30um scans the local P of formation to silicon chip surface to diameter
+Emitter is processed in heavy doping; Clean again and dry up.Require square resistance to be not more than 40 Ω/.
⑷ at silicon chip front surface spin coating phosphoric acid-ethanol mixed aqueous solution; With laser the silicon chip front surface is carried out local heavy doping then, adopting wavelength is the Paladin UV ultraviolet source of 355nm, and sweep speed is 5m/s, and power is 3W, is laser focusing that the lasing light emitter of 30um scans formation N to silicon chip surface to diameter
+Light dope is processed emitter; Using volume fraction again is that 10% HF solution washes the SiNx deielectric-coating of silicon chip back of the body surface and front surface, and cleaning dries up.Require square resistance to be not less than 100 Ω/.
⑸ adopt the boiler tube dry oxidation to deposit SiO in the silicon chip both sides
2Film, the thickness of rete is about 10nm, has good passivation effect.
⑹ adopt the PECVD method to prepare the SiNx antireflective coating in the silicon chip both sides.
⑺ employing silk screen printing is manufacture batteries positive and negative electrode and sintering at the silicon chip back side, accomplishes the preparation process of entire cell.
Embodiment 2:
⑴ carry out surface-texturing to crystal silicon chip handles, and is just carrying on the back two surface preparation SiNx films;
⑵ adopt wavelength on the crystalline silicon back of the body surface that scribbles phosphoric acid be that the AVIA green glow method for scanning of 532nm prepares local N
+The heavy doping structure, and cleaning dries up;
⑶ adopt wavelength on the crystalline silicon back of the body surface that scribbles boric acid be that the AVIA green glow method for scanning of 532nm prepares local P
+The heavy doping structure, and cleaning dries up;
⑷ adopt wavelength at the crystalline silicon front surface that scribbles phosphoric acid is that the AVIA green glow method for scanning of 532nm prepares N
+The light dope structure, and to use volume fraction be that 10% HF solution cleaning and removing is removed the SiNx film of both sides, cleaning dries up;
⑸ adopt the boiler tube dry oxidation to deposit SiO in the silicon chip both sides
2Film;
⑹ prepare the SiNx antireflective coating in the silicon chip both sides;
⑺ employing silk screen printing is manufacture batteries positive and negative electrode and sintering at the silicon chip back side, accomplishes the preparation process of entire cell.
Present embodiment except that above-mentioned ⑵, ⑶ and ⑷ in the step employed laser and embodiment 1 different, other each go on foot all consistent with embodiment 1.
Embodiment 3:
⑴ carry out surface-texturing to crystal silicon chip handles, and is just carrying on the back two surface preparation SiNx films;
⑵ be that the method for the Paladin UV UV scanning of 355nm prepares local N at the crystalline silicon back of the body surface by utilizing wavelength that scribbles phosphoric acid
+The heavy doping structure, and cleaning dries up;
⑶ be that the method for the Paladin UV UV scanning of 355nm prepares local P at the crystalline silicon back of the body surface by utilizing wavelength that scribbles boric acid
+The heavy doping structure, and cleaning dries up;
⑷ utilize wavelength to prepare N for the method for the Paladin UV UV scanning of 355nm at the crystalline silicon front surface that scribbles phosphoric acid
+The light dope structure, and to use concentration be that 10% HF aqueous solution cleaning and removing is removed the SiNx film at the table back side, cleaning dries up;
⑸ adopt the boiler tube dry oxidation to deposit SiO in the silicon chip both sides
2Film;
⑹ prepare the SiNx antireflective coating in the silicon chip both sides;
Utilize electric plating method at the silicon chip back side manufacture batteries positive and negative electrode, and adopt rapid thermal anneal process, accomplish the preparation process of entire cell.
Present embodiment except that above-mentioned ⑺ step battery positive and negative electrode preparation method and embodiment 1 are different, other each go on foot all consistent with embodiment 1.
Embodiment 4:
The method of employing chemical plating is the manufacture batteries positive and negative electrode at the silicon chip back side, and adopts rapid thermal anneal process, accomplishes the preparation process of entire cell; Other each steps are all consistent with embodiment 3.
Embodiment 5:
The method of employing ald is depositing Al on the silicon chip two sides
2O
3Passivating film; Other each step is all consistent with embodiment 1.
Embodiment 6:
The method of employing ald is depositing Al on the silicon chip two sides
2O
3Passivating film; Other each step is all consistent with embodiment 2.
Embodiment 7:
The method of employing ald is depositing Al on the silicon chip two sides
2O
3Passivating film; Other each step is all consistent with embodiment 3.
Embodiment 8:
The method of employing ald is depositing Al on the silicon chip two sides
2O
3Passivating film; Other each step is all consistent with embodiment 4.
The present invention is not limited to above-mentioned execution mode; If various changes of the present invention or distortion are not broken away from the spirit and scope of the present invention; If these are changed and modification belongs within claim of the present invention and the equivalent technologies scope, then the present invention also comprises these changes and type.
Claims (9)
1. the preparation method based on the IBC solar cell of N type substrate is characterized in that, uses the method for laser doping to prepare emitter, specifically may further comprise the steps:
⑴ carry out the surface-texturing processing and carry out chemical cleaning crystal silicon chip, prepares deielectric-coating in both sides then, makes the silicon chip surface possess hydrophilic property;
⑵ prepare local N in the method for the crystalline silicon back of the body surface by utilizing laser scanning that scribbles the phosphorus source
+The heavy doping structure, and cleaning-drying is handled;
⑶ prepare local P in the method for the crystalline silicon back of the body surface by utilizing laser scanning that scribbles the boron source
+The heavy doping structure, and cleaning-drying is handled;
⑷ prepare N in the method for the full laser scanning of crystalline silicon front surface utilization that scribbles the phosphorus source
+The light dope structure;
⑸ remove the deielectric-coating of silicon chip both sides, and cleaning-drying is handled;
⑹ prepare passivating film on the silicon chip two sides;
⑺ prepare antireflective coating on the silicon chip two sides;
⑻ at the silicon chip back side manufacture batteries positive and negative electrode; And sintering.
2. the preparation method of the IBC solar cell based on N type substrate according to claim 1 is characterized in that, the order of said step ⑵, ⑶ and ⑷ is adjusted arbitrarily.
3. the preparation method of the IBC solar cell based on N type substrate according to claim 1 is characterized in that said step ⑵ and the described phosphorus of step ⑷ source are the mixed solution or the phosphorosilicate glass of phosphoric acid and water and alcohol.
4. the preparation method of the IBC solar cell based on N type substrate according to claim 1 is characterized in that the described boron of said step ⑶ source is BAS or Pyrex.
5. the preparation method of the IBC solar cell based on N type substrate according to claim 1 is characterized in that, the described deielectric-coating of said step ⑴ is the SiO that wet-chemical oxidation or dry oxidation generate
2Perhaps SiNx film.
6. the preparation method of the IBC solar cell based on N type substrate according to claim 1 is characterized in that the laser parameter of said step ⑵, ⑶ and the described laser scanning of ⑷ is: the pulse of power 1W-10W, wavelength 200nm-600nm.
7. the preparation method of the IBC solar cell based on N type substrate according to claim 1 is characterized in that the described passivating film of said step ⑹ comprises SiO
2, Al
2O
3Or α-Si film.
8. the preparation method of the IBC solar cell based on N type substrate according to claim 1 is characterized in that the described antireflective coating of said step ⑺ comprises SiNx, TiO
2Or MgF
2Film.
9. the preparation method of the IBC solar cell based on N type substrate according to claim 1 is characterized in that the described method for preparing the battery positive and negative electrode of said step ⑻ comprises silk screen printing, plating or chemical plating.
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| CN103441190A (en) * | 2013-09-09 | 2013-12-11 | 英利集团有限公司 | Method for manufacturing PN junction of solar battery |
| CN104425651A (en) * | 2013-09-09 | 2015-03-18 | 上海理想万里晖薄膜设备有限公司 | Process for preparing heterojunction solar cell without grid electrode on front surface at low temperature |
| CN105405899A (en) * | 2015-09-28 | 2016-03-16 | 上海大族新能源科技有限公司 | N-type double-side battery and manufacturing method thereof |
| CN106784152A (en) * | 2016-12-29 | 2017-05-31 | 英利能源（中国）有限公司 | A kind of preparation method of IBC batteries |
| CN107112373A (en) * | 2014-12-30 | 2017-08-29 | 默克专利股份有限公司 | The laser doping of semiconductor |
| CN107112381A (en) * | 2014-12-30 | 2017-08-29 | 默克专利股份有限公司 | The method of doped semiconductor |
| CN107180881A (en) * | 2017-06-21 | 2017-09-19 | 浙江晶科能源有限公司 | A kind of preparation method of p-type monocrystalline solar cells |
| CN107946409A (en) * | 2017-12-12 | 2018-04-20 | 浙江晶科能源有限公司 | A kind of back side knot method of IBC solar cells |
| CN109698252A (en) * | 2018-12-25 | 2019-04-30 | 浙江晶科能源有限公司 | A kind of IBC battery and preparation method thereof |
| CN110534618A (en) * | 2019-08-29 | 2019-12-03 | 通威太阳能(眉山)有限公司 | A kind of full back contacts IBC battery preparation method and battery based on laser diffusion |
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| CN104425651A (en) * | 2013-09-09 | 2015-03-18 | 上海理想万里晖薄膜设备有限公司 | Process for preparing heterojunction solar cell without grid electrode on front surface at low temperature |
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| CN106784152A (en) * | 2016-12-29 | 2017-05-31 | 英利能源（中国）有限公司 | A kind of preparation method of IBC batteries |
| CN107180881A (en) * | 2017-06-21 | 2017-09-19 | 浙江晶科能源有限公司 | A kind of preparation method of p-type monocrystalline solar cells |
| CN107946409A (en) * | 2017-12-12 | 2018-04-20 | 浙江晶科能源有限公司 | A kind of back side knot method of IBC solar cells |
| CN109698252A (en) * | 2018-12-25 | 2019-04-30 | 浙江晶科能源有限公司 | A kind of IBC battery and preparation method thereof |
| CN110534618A (en) * | 2019-08-29 | 2019-12-03 | 通威太阳能(眉山)有限公司 | A kind of full back contacts IBC battery preparation method and battery based on laser diffusion |
| CN110600561A (en) * | 2019-08-30 | 2019-12-20 | 黄河水电光伏产业技术有限公司 | Battery structure of interdigital PN junction of IBC battery and preparation method thereof |
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