CN103441190A - Method for manufacturing PN junction of solar battery - Google Patents
Method for manufacturing PN junction of solar battery Download PDFInfo
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- CN103441190A CN103441190A CN2013104066338A CN201310406633A CN103441190A CN 103441190 A CN103441190 A CN 103441190A CN 2013104066338 A CN2013104066338 A CN 2013104066338A CN 201310406633 A CN201310406633 A CN 201310406633A CN 103441190 A CN103441190 A CN 103441190A
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Abstract
The invention provides a method for manufacturing a PN junction of a solar battery and belongs to the field of a solar battery. A solar energy silicon chip is subject to a texturing process, phosphoric acid with a certain concentration is spayed on the surface of the silicon chip, and then laser scanning is performed. The provided method can replace a conventional method for manufacturing the PN junction through high-temperature diffusion, and is suitable for industrial production, the process time can be obviously shortened, the production cost can be reduced, besides, the use of a severely toxic medicine, i.e., phosphorous oxychloride can be avoided, the operation safety of workers is enhanced, the production power is effectively improved, and the production cost is reduced.
Description
Technical field
The present invention relates to PN junction manufacture method in a kind of solar cell, belong to area of solar cell.
Background technology
Along with the day of conventional energy resource is becoming tight, regenerative resource more and more is subject to the mankind's attention.In in the past 10 years, the solar power generation amount is Exponential growth, and along with updating of the preparation method of crystal silicon solar energy battery, production cost constantly reduces, and solar power generation will more and more be subject to everybody favor.
At present, the production method basic forming of solar cell, comprise laser making herbs into wool, plating passivation antireflection composite membrane, laser doping, laser back electrode processed, the removal that its concrete technology is the damage layer and matte the preparation------removal of surperficial phosphorosilicate glass and the removal of peripheral p-n---passivated reflection reducing is penetrated the preparation of layer---metallization (back electrode, the printing-sintering of back of the body electric field and positive electrode)---sorting that phosphorus oxychloride diffuses to form p-n junction.But along with the continuous renewal of production equipment, in order further reducing production costs, to enhance productivity, the production technology of solar cell to be improved, compete with satisfying the market.
Such as, Ningbo Solar Electric Power Co., Ltd in 2010 have applied for a kind of preparation method's (application number is 201010102808.2) of silicon solar cell, the present invention adopts the selective diffusion process legal system to make PN junction, effectively reduced the sheet resistance of silicon solar cell, wherein utilize phosphoric acid as slurry, adopt the mode of hyperthermia drying to realize the adhesion in phosphorus source.
At present, in industry, generally adopt the method for phosphorus oxychloride High temperature diffusion to make the pn knot.This method need to be used the severe poisonous chemicals phosphorus oxychloride, and need at high temperature carry out, dangerous high, and high temperature can affect the silicon chip performance, thereby reduces the efficiency of finished product battery.In addition, the silicon chip after making herbs into wool is produced by tubular type equipment, and the process time is long, affects production efficiency.
Summary of the invention
The technical problem to be solved in the present invention is to provide PN junction manufacture method in a kind of solar cell, this patent is suitable for suitability for industrialized production, can obviously shorten the process time, reduce production costs, can avoid the use of poisonous drugs phosphorus oxychloride in addition, the fail safe of increase personnel operation, promote production capacity effectively, reduces production costs.
For solving the problems of the technologies described above, the technical solution used in the present invention is: PN junction manufacture method in a kind of solar cell is characterized in that comprising the steps:
Step 1: adopt the mixed acid of hydrofluoric acid and nitric acid to silicon wafer wool making;
Step 2: at the phosphoric acid of silicon chip surface spraying 20%-60% mass ratio;
Step 3: the laser doping method of employing, then carry out the whole diffusion of laser, silicon chip surface is dried;
Step 4: adopt the mixed liquor of hydrofluoric acid and hydrochloric acid to carry out surperficial Wafer Cleaning;
Step 5: adopt chain type PECVD to carry out the silicon nitride film deposition;
Step 6: adopt method for printing screen to carry out positive electrode, the printing of back electrode and back of the body electric field, carry out sintering afterwards, test, and sorting, complete the making of PN junction.
Such scheme is described further, in the phosphoric acid spraying process of step 2, drive silicon chip at the uniform velocity to move, utilize the chain type spraying equipment evenly to spray phosphoric acid at the silicon chip front surface, described spraying equipment is the strip equipment with the shower nozzle more than 2, and the width of spraying equipment is greater than the width of silicon chip.
Such scheme is described further, in the whole diffusion process of the laser of step 3, uses Laser Scanning Equipment, the laser facula size is at 5 μ m-50 μ m, and the laser facula energy is adjusted between 2J-30J, and the laser scanning time is the 1s-3s/ sheet.
The beneficial effect that adopts technique scheme to produce is:
(1) the present invention is that a kind of energy substitutes the method that the pn knot is made in the conventional high-temperature diffusion, and silicon chip, after the making herbs into wool operation, first sprays certain density phosphoric acid at silicon chip surface, then carries out laser scanning.Can avoid using the poisonous drugs phosphorus oxychloride, the fail safe of increase personnel operation; Can react under normal temperature, avoid the harmful effect of high temperature to silicon chip; The Laser Scanning process time is short, with respect to the high-temperature diffusion method process time of more than one hour, can effectively promote production capacity, reduces production costs;
(2) the laser doping method adopted in the present invention, therefore edge does not have p-n junction, so just do not need " wet method is removed phosphorosilicate glass and edge insulation " step in the standard configuration production technology, only need the mixed acid of hydrofluoric acid and hydrochloric acid to carry out simply cleaning and getting final product to silicon chip, reduced workman's manipulation strength, reduce the use of chemicals, reduced production cost;
(3) the present invention adopts the phosphoric acid of 20%-60% mass ratio to replace the poisonous drugs phosphorus oxychloride, and its price is cheap, and cost is low, and dangerous little, this quality can meet the requirement of laser doping than the phosphoric acid of scope.
The accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
Fig. 1 is silicon chip spraying structural representation in the present invention, the transmission direction that in figure, arrow is silicon chip;
Wherein: 1, silicon chip, 2, shower nozzle.
Embodiment
The present invention is specifically related to PN junction manufacture method in a kind of solar cell, can substitute the method that High temperature diffusion is made the pn knot.
Below take the polymorphic battery as example, introduce the PN junction manufacture method in the present invention, its concrete steps are as follows:
Step 1: adopt the mixed acid of hydrofluoric acid and nitric acid to silicon wafer wool making, the content of each composition in the mixed acid of hydrofluoric acid and nitric acid: hydrofluoric acid density 25g-65g/L; Nitric acid density 420g-560g/L);
Step 2: at the phosphoric acid of silicon chip surface spraying 20%-60% mass ratio, in the phosphoric acid spraying process, drive silicon chip 1 at the uniform velocity to move, utilize the chain type spraying equipment evenly to spray phosphoric acid at the silicon chip front surface, spraying equipment as shown in Figure 1, its structure is that the width of spraying equipment is greater than the width of silicon chip 1 with the strip equipment of the shower nozzle 2 more than 2;
Step 3: the laser doping method of employing, then carry out the whole diffusion of laser, silicon chip surface is dried, in the whole diffusion process of laser, use Laser Scanning Equipment, the laser facula size is at 5 μ m-50 μ m, the laser facula energy is adjusted between 2J-30J, and the laser scanning time is the 1s-3s/ sheet;
Step 4: adopt the mixed liquor of hydrofluoric acid and hydrochloric acid to carry out surperficial Wafer Cleaning, the content of each composition in the mixed liquor of hydrofluoric acid and hydrochloric acid: hydrofluoric acid mass density 8g-25g/L; The hydrochloric acid mass density is 6g-20g/L;
Step 5: adopt chain type PECVD(plasma enhanced chemical vapor deposition method) carry out the silicon nitride film deposition;
Step 6: adopt method for printing screen to carry out positive electrode, the printing of back electrode and back of the body electric field, carry out sintering afterwards, test, and sorting, complete the making of PN junction.
According to above four embodiment, can find out, utilize the PN junction manufacture method in the present invention, can be produced at normal temperatures, can avoid the harmful effect of high temperature to silicon chip, promote battery efficiency, and effectively shorten the process time.The present invention selects the phosphoric acid of 20%-60% mass ratio, with other phosphorus sources, compares, not only can well meet in the PN junction preparation process, and the requirement of laser doping, and also price is cheap, and cost is low, dangerous little.The laser doping method that the present invention adopts, therefore edge does not have p-n junction, so just do not need " wet method is removed phosphorosilicate glass and edge insulation " step in the standard configuration production technology, only need the mixed acid of hydrofluoric acid and hydrochloric acid to carry out simply cleaning and getting final product to silicon chip, reduced workman's manipulation strength, reduce the use of chemicals, reduced production cost.
Claims (3)
1. PN junction manufacture method in a solar cell, is characterized in that comprising the steps:
Step 1: adopt the mixed acid of hydrofluoric acid and nitric acid to silicon wafer wool making;
Step 2: at the phosphoric acid of silicon chip surface spraying 20%-60% mass ratio;
Step 3: the laser doping method of employing, then carry out the whole diffusion of laser, silicon chip surface is dried;
Step 4: adopt the mixed liquor of hydrofluoric acid and hydrochloric acid to carry out surperficial Wafer Cleaning;
Step 5: adopt chain type PECVD to carry out the silicon nitride film deposition;
Step 6: adopt method for printing screen to carry out positive electrode, the printing of back electrode and back of the body electric field, carry out sintering afterwards, test, and sorting, complete the making of PN junction.
2. PN junction manufacture method in a kind of solar cell according to claim 1, it is characterized in that in the phosphoric acid spraying process of step 2, drive silicon chip (1) at the uniform velocity to move, utilize the chain type spraying equipment evenly to spray phosphoric acid at the silicon chip front surface, described spraying equipment is that the width of spraying equipment is greater than the width of silicon chip (1) with the strip equipment of the shower nozzle more than 2 (2).
3. PN junction manufacture method in a kind of solar cell according to claim 1, it is characterized in that in the whole diffusion process of laser of step 3, use Laser Scanning Equipment, the laser facula size is at 5 μ m-50 μ m, the laser facula energy is adjusted between 2J-30J, and the laser scanning time is the 1s-3s/ sheet.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715306A (en) * | 2013-12-31 | 2014-04-09 | 巨力新能源股份有限公司 | Method for manufacturing solar cell through poor piece generated after wet etching of monocrystalline silicon piece |
| CN111063760A (en) * | 2018-10-17 | 2020-04-24 | 晶澳太阳能有限公司 | Preparation process of solar cell |
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| US20100055887A1 (en) * | 2008-09-03 | 2010-03-04 | IP Photonics Corporation | Laser Diffusion Fabrication of Solar Cells |
| CN101783374A (en) * | 2010-01-25 | 2010-07-21 | 宁波太阳能电源有限公司 | Method for manufacturing silicon solar cell |
| US20110269263A1 (en) * | 2010-03-05 | 2011-11-03 | Kang Yoon-Mook | Method for implanting impurities into a substrate and method for manufacturing a solar cell using the same |
| CN102842646A (en) * | 2012-05-30 | 2012-12-26 | 浙江晶科能源有限公司 | Preparation method of interdigitated back-contact battery based on N-type substrate |
| CN102969402A (en) * | 2012-12-12 | 2013-03-13 | 泰州德通电气有限公司 | Preparation process of shallow junction solar battery |
| CN103151427A (en) * | 2013-03-25 | 2013-06-12 | 泰通(泰州)工业有限公司 | Process for preparing two-sided battery |
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2013
- 2013-09-09 CN CN201310406633.8A patent/CN103441190B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100055887A1 (en) * | 2008-09-03 | 2010-03-04 | IP Photonics Corporation | Laser Diffusion Fabrication of Solar Cells |
| CN101783374A (en) * | 2010-01-25 | 2010-07-21 | 宁波太阳能电源有限公司 | Method for manufacturing silicon solar cell |
| US20110269263A1 (en) * | 2010-03-05 | 2011-11-03 | Kang Yoon-Mook | Method for implanting impurities into a substrate and method for manufacturing a solar cell using the same |
| CN102842646A (en) * | 2012-05-30 | 2012-12-26 | 浙江晶科能源有限公司 | Preparation method of interdigitated back-contact battery based on N-type substrate |
| CN102969402A (en) * | 2012-12-12 | 2013-03-13 | 泰州德通电气有限公司 | Preparation process of shallow junction solar battery |
| CN103151427A (en) * | 2013-03-25 | 2013-06-12 | 泰通(泰州)工业有限公司 | Process for preparing two-sided battery |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715306A (en) * | 2013-12-31 | 2014-04-09 | 巨力新能源股份有限公司 | Method for manufacturing solar cell through poor piece generated after wet etching of monocrystalline silicon piece |
| CN111063760A (en) * | 2018-10-17 | 2020-04-24 | 晶澳太阳能有限公司 | Preparation process of solar cell |
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