CN202871802U - Plastic packaging epitaxial ultrafast recovery diode - Google Patents
Plastic packaging epitaxial ultrafast recovery diode Download PDFInfo
- Publication number
- CN202871802U CN202871802U CN 201220581237 CN201220581237U CN202871802U CN 202871802 U CN202871802 U CN 202871802U CN 201220581237 CN201220581237 CN 201220581237 CN 201220581237 U CN201220581237 U CN 201220581237U CN 202871802 U CN202871802 U CN 202871802U
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- China
- Prior art keywords
- epitaxial
- chip
- epoxy resin
- plastic packaging
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The utility model relates to a plastic packaging epitaxial ultrafast recovery diode. The innovation point is that the plastic packaging epitaxial ultrafast recovery diode includes an epitaxial fast recovery chip, low stress epoxy resin, solders, a pair of copper leads, and pure tin-coated layers; the inner end of each copper lead is formed into a cone shape by upsetting, and the epitaxial fast recovery chip is arranged between the cone-shaped inner ends of the copper leads; the epitaxial fast recovery chip is fixedly welded on the inner ends of the copper leads on the two sides; the epitaxial fast recovery chip is packaged by the low stress epoxy resin, and the pure tin-coated layers on the copper leads are exposed out of the low stress epoxy resin. The advantages are that: because of the adoption of the epitaxial chip, a base region buffer layer structure can be realized excellently, the epitaxial chip greatly reduces the backward voltage, the defect of poor trade-off between the platinum doping technique forward voltage drop and the reversed time is overcome, the reverse recovery characteristic is improved, the softness factor is improved from 0.3 to 1.0, and at the same time, the outstanding advantage of the platinum doping high temperature reverse leakage current is performed.
Description
Technical field
The utility model relates to a kind of diode, particularly a kind of plastic packaging extension type Ultrafast recovery diode.
Background technology
The loss of power device affects its reliability and efficient in the Switching Power Supply, along with the lifting of complete machine frequency and the development of switch power technology, for growing with each passing day because of the not good enough cry that causes power loss of the recovery characteristics of diode.Traditional diode can produce harmonic current to electrical network and disturb, and causes that power factor descends, and causes electric network pollution.APFC (typical circuit is seen Fig. 1) can be eliminated the harmonic current of power supply effectively, improves power factor, reduces high order harmonic component.But the fast recovery diode in the APFC causes diode to produce larger loss because reverse recovery characteristic is not good, and produces EMI interference harmonic wave.
Summary of the invention
The technical problems to be solved in the utility model provides a kind of plastic packaging extension type Ultrafast recovery diode, can overcome and mix platinum technique forward drop and the not good drawback of trading off reverse recovery time, improve reverse recovery characteristic, platinum high temperature reverse leakage current outstanding advantage is mixed in simultaneously performance.
For solving the problems of the technologies described above, the technical solution of the utility model is: a kind of plastic packaging extension type Ultrafast recovery diode, its innovative point is: comprise that extension type recovers chip, low-strees epoxy resin, scolder, copper lead-in wire, pure tin coating soon, the copper lead-in wire is for a pair of, the inner heading of copper lead-in wire is tapered, between the end toper extension type is set and recovers soon chip in the copper lead-in wire, copper lead-in wire the inner that extension type recovers chip and both sides soon is welded and fixed; Extension type recovers soon chip and adopts the low-strees epoxy resin to encapsulate, and the copper core that exposes the low-strees epoxy resin plates pure tin coating outward.
The utility model has the advantage of: owing to adopting epitaxial wafer can realize well the base buffer layer structure.Therefore the epitaxial wafer decrease reverse voltage), can overcome like this and mix platinum technique forward drop and the compromise not good drawback of reversed time, improve reverse recovery characteristic, the softness factor is improved to 1.0 from 0.3, and the outstanding advantage of platinum high temperature reverse leakage current is mixed in simultaneously performance.
Description of drawings
Fig. 1 is typical hard switching Boost pfc circuit figure.
Fig. 2 is the utility model plastic packaging extension type Ultrafast recovery diode structural representation.
Embodiment
As shown in Figure 2, comprise that extension type recovers chip 1, low-strees epoxy resin 2, scolder 3, copper lead-in wire 4, pure tin coating 5 soon.
The inner of above-mentioned copper lead-in wire 4 is upset as taper, and copper lead-in wire 4 be a pair of, extension type is set between interior end toper recovers soon chip 1, and the copper that extension type recovers chip 1 and both sides soon 4 tapers that go between are welded and fixed by scolder 3.
Extension type recovers soon chip 1 and adopts low-strees epoxy resin 2 to encapsulate, and exposes the copper core 4 outer plating pure tin coating 5 of low-strees epoxy resin 2.
Plating is tested after finishing, and the Ultrafast recovery diode technical parameter of this structure is: Io (forward current): 1.0 ~ 8.0A; The VR(reverse voltage): 100 ~ 600V; The TRR(reversed time):＜25ns; VF (forward drop):＜1.7V; IR (reverse leakage current):＜1.0uA; Typical case's softness factor: 1.0.
Claims (1)
1. plastic packaging extension type Ultrafast recovery diode is characterized in that: comprise that extension type recovers chip, low-strees epoxy resin, scolder, copper lead-in wire, pure tin coating soon, the copper lead-in wire is for a pair of, the inner upsetting of copper lead-in wire
HeadTapered, in the copper lead-in wire, between the end toper extension type is set and recovers soon chip, copper lead-in wire the inner that extension type recovers chip and both sides soon is welded and fixed; Extension type recovers soon chip and adopts the low-strees epoxy resin to encapsulate, and the copper core that exposes the low-strees epoxy resin plates the pure tin plating outward.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220581237 CN202871802U (en) | 2012-11-07 | 2012-11-07 | Plastic packaging epitaxial ultrafast recovery diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220581237 CN202871802U (en) | 2012-11-07 | 2012-11-07 | Plastic packaging epitaxial ultrafast recovery diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202871802U true CN202871802U (en) | 2013-04-10 |
Family
ID=48038493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220581237 Expired - Lifetime CN202871802U (en) | 2012-11-07 | 2012-11-07 | Plastic packaging epitaxial ultrafast recovery diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202871802U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103972272A (en) * | 2014-04-18 | 2014-08-06 | 苏州锝耀电子有限公司 | High-reliability surface mounted device |
| CN109244043A (en) * | 2018-08-01 | 2019-01-18 | 上海艾续电子科技有限公司 | New automobile igniter high-voltage diode |
-
2012
- 2012-11-07 CN CN 201220581237 patent/CN202871802U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103972272A (en) * | 2014-04-18 | 2014-08-06 | 苏州锝耀电子有限公司 | High-reliability surface mounted device |
| CN109244043A (en) * | 2018-08-01 | 2019-01-18 | 上海艾续电子科技有限公司 | New automobile igniter high-voltage diode |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130410 |
|
| CX01 | Expiry of patent term |