CN201323198Y - Rectifier bridge - Google Patents
Rectifier bridge Download PDFInfo
- Publication number
- CN201323198Y CN201323198Y CNU2008202328133U CN200820232813U CN201323198Y CN 201323198 Y CN201323198 Y CN 201323198Y CN U2008202328133 U CNU2008202328133 U CN U2008202328133U CN 200820232813 U CN200820232813 U CN 200820232813U CN 201323198 Y CN201323198 Y CN 201323198Y
- Authority
- CN
- China
- Prior art keywords
- crystal grain
- rectifier bridge
- welding
- weld tabs
- salient point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Synchronous Machinery (AREA)
Abstract
The utility model relates to a rectifier bridge which belongs to the field of a semiconductor device and is mainly used for rectifying in various electronic circuits. The rectifier bridge comprises an epoxy resin shell (1), a crystal grain (4) which is encapsulated in the epoxy resin shell, a first welding sheet (5) and a second welding sheet (6). The crystal grain (4) is arranged between the first and the second welding sheets (5, 6), one end of the first welding sheet (5) is connected with a lower lead (2), and one end of the second welding sheet (6) is connected with an upper lead (3). The rectifier bridge is characterized in that a salient point (7) is arranged on the lower lead (2), and a salient point (8) is arranged on the upper lead (3). Copper granules are replaced by the salient points of the leads, so as to save the cost; the crystal grain is welded with the leads at one time, so as to avoid the pre-welding of the crystal grain and the copper granules. Therefore, the efficiency is improved, the processing is simple, energy resources are saved, and the cost is reduced.
Description
Technical field
Rectifier bridge belongs to field of semiconductor devices, mainly is used in the various electronic circuits and plays rectified action.
Background technology
The effect of rectifier bridge mainly is that alternating current is become direct current, all uses rectifier bridge in the rectification circuit of power supply, electricity-saving lamp, automotive electronics, UPS etc., and is very extensive as the base semiconductor device application.Mainly take the little shot copper of crystal grain window side prewelding when at present making rectifier bridge, arrive together manufacture craft with wire bonds then with GPP crystal grain.This kind welding manner is welding sequence complexity, inefficiency not only, and cost is higher.Crystal grain is wanted to advance soldering furnace 3 times, and temperature very high (340-380 ℃) during because of welding repeats high temperature the reverse cutoff performance of crystal grain is caused harmful effect.
The utility model content
The technical problems to be solved in the utility model is: overcome the problem that prior art exists, design a kind of shot copper and crystal grain of can replacing and weld, save cost, energy savings, the rectifier bridge of raising the efficiency.
The technical scheme that its technical problem that solves the utility model adopts is: this rectifier bridge, comprise epoxy package, be encapsulated in crystal grain, first weld tabs and second weld tabs in the epoxy package, crystal grain places between first and second weld tabs, first weld tabs, one end connects lower wire, second weld tabs, one end connects upper conductor, it is characterized in that: lower wire is provided with salient point upwards, and upper conductor is provided with downward salient point.
Downward salient point is 2, is disposed on the upper conductor.
The main effect of weld tabs is that crystal grain, upper conductor, lower wire is welded together.
It is to prevent to produce when crystal grain and lead from welding with weld tabs Xi Qiao that salient point on the lead mainly acts on, and it is the internal structure of protection rectifier bridge that epoxy package mainly acts on.
Compared with prior art, rectifier bridge of the present utility model, the lead that connects crystal grain is modified into the lead of band salient point by the plane, realize that crystal grain and lead directly weld, the lead salient point replaces shot copper, saves precious metal copper, reduces cost, crystal grain and shot copper prewelding have been avoided in the disposable welding of crystal grain and lead.Once welding has solved prior art crystal grain and has wanted to advance soldering furnace 3 times, repeats 340-380 ℃ of high temperature during because of welding the reverse cutoff performance of crystal grain is caused dysgenic problem.Technology is simple, raises the efficiency energy savings.
Description of drawings
Fig. 1 is the appearance structure schematic diagram of the utility model rectifier bridge;
Fig. 2 is the sectional structure schematic diagram of Fig. 1;
Fig. 3 is the side-looking structural representation of Fig. 2;
Fig. 4 is the lower wire structural representation;
Fig. 5 is a upper conductor salient point position structural representation.
Fig. 1-the 5th, the most preferred embodiment of the utility model rectifier bridge.Wherein: 1 epoxy package, 2 lower wires, 3 upper conductors, 4 crystal grain, 5 first weld tabs, 6 second weld tabs, 7,8 salient points.
Embodiment:
Below in conjunction with accompanying drawing 1-5 to the utility model rectifier bridge further instruction:
With reference to Fig. 1-5
Rectifier bridge, comprise epoxy package 1, be encapsulated in crystal grain 4, first weld tabs 5 and second weld tabs 6 in the epoxy package, crystal grain 4 places between the one 5 and two weld tabs 6, first weld tabs, 5 one ends connect lower wire 2, second weld tabs, 6 one ends connect upper conductor 3, lower wire 2 is provided with salient point 7 upwards, and 2 downward salient points 8 are disposed on the upper conductor 3.
Manufacturing process is as follows:
It is with upper conductor 3 that the utility model rectifier bridge mainly improves, and lower wire 2 welding positions change curve into by straight line, and the crooked part of lead forms salient point, replaces original shot copper by salient point.Both saved copper material, technology is simplified greatly, once welding can be finished, and saves material and the energy, has solved prior art products again simultaneously and has advanced the harmful effect that soldering furnace high temperature causes the reverse cutoff performance of crystal grain repeatedly.Reached the performance identical through the test lead salient point with shot copper.
Claims (2)
1, rectifier bridge, comprise epoxy package (1), be encapsulated in crystal grain (4), first weld tabs (5) and second weld tabs (6) in the epoxy package, crystal grain (4) places between first (5) and two weld tabs (6), first weld tabs (5) one ends connect lower wire (2), second weld tabs (6) one ends connect upper conductor (3), it is characterized in that: lower wire (2) is provided with salient point (7) upwards, and upper conductor (3) is provided with downward salient point (8).
2, rectifier bridge according to claim 1 is characterized in that: downward salient point (8) is 2, is disposed on the upper conductor (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008202328133U CN201323198Y (en) | 2008-12-20 | 2008-12-20 | Rectifier bridge |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008202328133U CN201323198Y (en) | 2008-12-20 | 2008-12-20 | Rectifier bridge |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201323198Y true CN201323198Y (en) | 2009-10-07 |
Family
ID=41160573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008202328133U Expired - Fee Related CN201323198Y (en) | 2008-12-20 | 2008-12-20 | Rectifier bridge |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201323198Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109494210A (en) * | 2018-12-25 | 2019-03-19 | 山东晶导微电子股份有限公司 | A kind of half-bridge encapsulating structure |
-
2008
- 2008-12-20 CN CNU2008202328133U patent/CN201323198Y/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109494210A (en) * | 2018-12-25 | 2019-03-19 | 山东晶导微电子股份有限公司 | A kind of half-bridge encapsulating structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091007 Termination date: 20131220 |