CN201956358U - Axial rectifying diode - Google Patents
Axial rectifying diode Download PDFInfo
- Publication number
- CN201956358U CN201956358U CN 201020676859 CN201020676859U CN201956358U CN 201956358 U CN201956358 U CN 201956358U CN 201020676859 CN201020676859 CN 201020676859 CN 201020676859 U CN201020676859 U CN 201020676859U CN 201956358 U CN201956358 U CN 201956358U
- Authority
- CN
- China
- Prior art keywords
- lead
- wire
- axial
- rectifier diode
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01087—Francium [Fr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The utility model discloses an axial rectifying diode, which is mainly formed by welding a pair of leads and a chip through a welding piece, then integrally packaging and exposing lead pins, and is characterized in that: the diameter of each lead of the axial rectifying diode is reduced to 0.4-0.57mm, the diameter of the end part of each lead is 0.9-1.8mm, and the chip is reduced to be the axial rectifying diode with the side length being 0.6-1.6mm. The axial rectifying diode has the advantages that: the leads and crystal grains are improved and then combined together by a product, and the performance of the axial rectifying diode can also be ensured while the product size and the raw-material consumption are reduced.
Description
Technical field
The utility model relates to a kind of axial diode, specifically be a kind of mainly by pair of lead wires and chip by the weld tabs welding after, overall package, the axial diode that the exposed lead wires pin constitutes.
Background technology
Axial diode mainly is made up of exit lead (being called for short lead-in wire), wafer, weld tabs, white glues, plastic packaging material.This product by GE in the sixties in last century not because of the production cost factor is transferred to TaiWan, China production, the back goes to the continent by Taiwan gradually in the mid-80 and produces, existing China's Mainland has become the diode production base in the whole world.
Diode operation mainly is can carry out the characteristic that forward conduction oppositely ends for electric current and realize the power rectifier purpose by the PN junction of wherein semiconductor silicon chips (crystal grain); industry; civilian; the equal extensive use in fields such as military project; because of it is that alternating current is become the indispensable mode of direct current; and volume is little; there is not better product to replace for a long time yet; so it is countless to enter the manufacturer of the industry; market competition is fierce unusually; after financial crisis in 08 year; along with large prices of raw and semifnished materials raise up significantly; and home products does not go up in the price of terminal market thereupon; the reasonable profit space of enterprise is greatly reduced; the recruitment cost rises year by year in addition, so the existence of enterprise is subjected to serious threat, it is imperative to find new outlets.
Lead-in wire accounts for the product total cost and is about 60% in the diode main material, and grains constitute is about 20%, if can will go between under the prerequisite that does not influence the device operating characteristic and crystallite dimension changes, can reach the saving cost, can reach the purpose of lifting production efficiency again.But at present also beyond example to the improvement whole world of lead-in wire.
Summary of the invention
Main task of the present utility model is to provide a kind of axial rectifier diode, specifically is a kind of by to the reduction of its part dimension, and make have an axial rectifier diode that volume is little and performance is consistent with conventional products.
In order to solve above technical problem, a kind of axial rectifier diode of the present utility model, after mainly welding by weld tabs by pair of lead wires and chip, overall package, the exposed lead wires pin constitutes, it is characterized in that: described axial rectifier diode is that diameter wire is reduced into 0.4-0.57mm, and the lead-in wire end diameter is 0.9-1.8mm, and chip is contracted to the axial rectifier diode that the length of side is 0.6-1.6mm.
Further, described lead-in wire is T-shaped or dried font lead-in wire.
Further, described chip is circular, square or polygonal chip.
The utility model can change the piece volumes of little axial rectifier diode and guarantee that its performance is identical with the performance of the axial rectifier diode of routine, and its reason is:
Early stage chip diffusion skill since on PROCESS FOR TREATMENT to the Numerical Control inaccuracy of its forward voltage, and the silicon face nickel plating technology is also backward relatively, so the crystal grain that preferred dimension is big can reduce the forward voltage values of device, because the defective of grain surface nickel dam, with wire bonds after have big pore to produce easily, cause the actual contact-making surface of crystal grain to diminish like this, when work, can cause local current densities excessive and device was lost efficacy in advance with the big cuddy board of lead-in wire (big ailhead).
Therefore, early stage chip only can be fit to early stage lead-in wire.The diameter wire of early stage axial diode is 0.78mm-0.8mm, the maximum safe carrying capacity of its electric current can reach 2A-4A, at that time for the production versatility, be used as the price also very cheap (price of having only present sixth) of the copper of lead-in wire in addition, so diameter wire is selected to such an extent that surplus is very abundant, and 1A, 1.5A and 2A product all select the diameter wire of same specification, behind unified frock clamp, be convenient to large-scale production.
And the maximum mean forward current of specification when being its work of 1A axial diode is 1A, so make lead-in wire with copper, diameter is that 0.4mm is just enough in theory, and the maximum mean forward current of specification when being 1.5A or its work of 2A axial diode is 1.5A and 2A, so make lead-in wire with copper, diameter is that 0.57mm is just enough, but at that time because the factor of chip can not be made minor diameter lead-in wire of the present utility model by theoretical value.
Advantage of the present utility model is: 1, the utility model is by the improvement to product lead-in wire size, the product of being produced is not early stage produces the theory of the unnecessary and mass excess of the sort of function of product, saved Limited resources to greatest extent satisfying under the prerequisite that client uses like this, and this is that all are based upon and do not influence on product quality premise and the basis.
2, this product will go between and crystal grain combines after having done to improve then, also guarantee its performance when reducing small product size and raw materials consumption, show one's talent in the industry.Adopt the material consumption maximum of lead-in wire of the present utility model and crystal grain to decrease by 50%, because product size diminishes, the diode number of single treatment just increases aborning simultaneously, make improving productivity 100%, energy savings consumption reaches 40%,, meet the requirement of national development low-carbon energy-saving.
Description of drawings
Fig. 1 is an axial diode structural representation of the present utility model.
Fig. 2 is that axial diode of the present utility model is done font pin configuration schematic diagram.
Fig. 3 is an axial diode tee T pin configuration schematic diagram of the present utility model.
Embodiment
Embodiment 1
The axial rectifier diode of present embodiment, as shown in Figure 1, be arranged in order welding by the order of lead-in wire 1, weld tabs 2, crystal grain 3, weld tabs 4, lead-in wire 5 after, be packaged into finished product.Described lead-in wire 1 is identical with lead-in wire 5 structures, and described weld tabs 2 is identical with weld tabs 4 structures; Described lead-in wire 1 and lead-in wire 5 are for doing font, and as shown in Figure 2, diameter is: 0.49mm, its large end face are 1.50mm; Described crystal grain 3 length of side 1.05mm, crystal grain 3 are now conventional crystal grain, below identical.Specifications and models are common rectifier diode (STD) 1A series products, maximum peak reverse voltage≤2000V.After tested, useful life is identical to the rectifier diode life-span with present plain shaft.
The axial rectifier diode of present embodiment, structure is identical with embodiment 1.Doing the font diameter wire is: 0.54mm, and the lead-in wire large end face is 1.55mm, and the crystal grain length of side is 1.2mm, and specifications and models are fast-recovery commutation diode (FR) 1A series products, maximum peak reverse voltage≤2000V.After tested, useful life is identical to the rectifier diode life-span with present plain shaft.
The axial rectifier diode of present embodiment, structure is identical with embodiment 1.Doing the font diameter wire is: 0.57mm, and the lead-in wire large end face is 1.7mm, and the crystal grain length of side is 1.2mm, and specifications and models are common rectifier diode (STD) 1.5A series products, maximum peak reverse voltage≤2000V.After tested, useful life is identical to the rectifier diode life-span with present plain shaft.
Embodiment 4
The axial rectifier diode of present embodiment, structure is identical with embodiment 1.Doing the font diameter wire is: 0.49mm, and the lead-in wire large end face is 1.0mm, and the crystal grain length of side is 0.7mm, and specifications and models are Schottky diode (SKY) 1A series products, maximum peak reverse voltage≤200V.After tested, useful life is identical to the rectifier diode life-span with present plain shaft.
Embodiment 5
The axial rectifier diode of present embodiment, structure is identical with embodiment 1.But lead-in wire is tee T, and as shown in Figure 3, diameter wire is: 0.49mm, lead-in wire large end face are 1.0mm, and the crystal grain length of side is 0.7mm, and specifications and models are Schottky diode (SKY) 1A series products, maximum peak reverse voltage≤200V.After tested, useful life is identical to the rectifier diode life-span with present plain shaft.
More than lead-in wire is for a pair of, and the therebetween chip is arranged routinely with weld tabs and to be welded, then encapsulated moulding.
Through test, present embodiment related products and parameter such as following table:
Claims (3)
1. axial rectifier diode, after mainly welding by weld tabs by pair of lead wires and chip, overall package, the exposed lead wires pin constitutes, it is characterized in that: the diameter wire of described axial rectifier diode is reduced into 0.4-0.57mm, the lead-in wire end diameter is 0.9-1.8mm, and chip is contracted to the axial rectifier diode that the length of side is 0.6-1.6mm.
2. a kind of axial rectifier diode according to claim 1 is characterized in that: described lead-in wire is T-shaped or dried font lead-in wire.
3. a kind of axial rectifier diode according to claim 1, it is characterized in that: described chip is circular, square or polygonal chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020676859 CN201956358U (en) | 2010-12-23 | 2010-12-23 | Axial rectifying diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020676859 CN201956358U (en) | 2010-12-23 | 2010-12-23 | Axial rectifying diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201956358U true CN201956358U (en) | 2011-08-31 |
Family
ID=44500460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201020676859 Expired - Lifetime CN201956358U (en) | 2010-12-23 | 2010-12-23 | Axial rectifying diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201956358U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102446977A (en) * | 2010-12-23 | 2012-05-09 | 南通星河电子有限公司 | Axial commutation diode |
-
2010
- 2010-12-23 CN CN 201020676859 patent/CN201956358U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102446977A (en) * | 2010-12-23 | 2012-05-09 | 南通星河电子有限公司 | Axial commutation diode |
| CN102446977B (en) * | 2010-12-23 | 2013-12-11 | 南通星河电子有限公司 | Axial commutation diode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN207602596U (en) | A kind of two-sided monocrystalline lamination photovoltaic module | |
| CN104835874B (en) | A kind of manufacture method of half-cell piece photovoltaic module | |
| CN102446977B (en) | Axial commutation diode | |
| CN201956358U (en) | Axial rectifying diode | |
| CN203445146U (en) | Directly-surface mounted type LED support | |
| CN206401334U (en) | It is cleavable without main grid crystal-silicon battery slice solar components | |
| CN203589042U (en) | Axial diode | |
| CN207282506U (en) | A kind of efficiently heterogeneous structure, assembly | |
| CN202678303U (en) | Lead frame | |
| CN102842572A (en) | Small double-row bridge rectifier | |
| CN202549856U (en) | Back electrode structure of crystalline silicon cell | |
| CN202423303U (en) | Novel photovoltaic diode | |
| CN202871802U (en) | Plastic packaging epitaxial ultrafast recovery diode | |
| CN204424287U (en) | Ridge of high pressure contact solar assembly | |
| CN209056505U (en) | A kind of PERC battery component | |
| CN207834316U (en) | A kind of photovoltaic cell component of novel circuit design | |
| CN205194735U (en) | Double -end cut straightly formula LED support | |
| CN206516646U (en) | Strengthen the dereliction grid cell piece solar components of welding effect | |
| CN205959999U (en) | High -efficient heterojunction solar wafer | |
| CN205985010U (en) | Solar module | |
| CN206727079U (en) | Dereliction grid cell piece solar components | |
| CN207097846U (en) | A kind of welding and stacked wafer moudle | |
| CN211414362U (en) | Wind-powered electricity generation base angle-adjustable processing frock | |
| CN201570498U (en) | Single-arm bridge type automobile rectifying diode | |
| CN202084541U (en) | Rectifying component of electric welding machine |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20110831 Effective date of abandoning: 20131211 |
|
| RGAV | Abandon patent right to avoid regrant |