CN202423303U - Novel photovoltaic diode - Google Patents
Novel photovoltaic diode Download PDFInfo
- Publication number
- CN202423303U CN202423303U CN2012200041879U CN201220004187U CN202423303U CN 202423303 U CN202423303 U CN 202423303U CN 2012200041879 U CN2012200041879 U CN 2012200041879U CN 201220004187 U CN201220004187 U CN 201220004187U CN 202423303 U CN202423303 U CN 202423303U
- Authority
- CN
- China
- Prior art keywords
- photovoltaic diode
- diode chip
- copper seat
- copper base
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
The utility model relates to a novel photovoltaic diode, comprising a copper base, an annular shell, a photovoltaic diode chip and two big-head leads, wherein a first big-head lead, the photovoltaic diode chip, the copper base and a second big-head lead are welded orderly; the photovoltaic diode chip is welded on one side of the copper base; the annular shell is tightly nested on a joint arranged on the same side of the copper base; the photovoltaic diode chip is coated in the annular shell; high-heat-conductivity package resin is filled between the annular shell and the copper base; therefore, a diode is characterized by large working current and high power.
Description
Technical field
The utility model relates to a kind of novel photovoltaic diode, the improvement on particularly a kind of novel photovoltaic diode structure.
Background technology
Along with the fast development of photovoltaic industry, solar components is also increasing to the requirement of power, and is therefore also increasingly high to the requirement of the high-power bypass diode of solar components.Photovoltaic diode receives its effect on structure in the market, and heat-sinking capability is relatively poor, and it is very fast to cause its temperature to raise, and may make the terminal box distortion of solar components, causes whole assembly to damage.Therefore, satisfy of the requirement of present solar components, just necessarily require its bypass diode that big electric current handling capacity, high-cooling property etc. are arranged power.
The utility model content
Relatively poor to existing photovoltaic diode heat-sinking capability, the temperature shortcoming faster that raises, the utility model provides a kind of big operating current that has, the photovoltaic diode of high-power characteristics.
The technical scheme that the utility model solves the problems of the technologies described above is following: a kind of novel photovoltaic diode; Comprise copper seat, ring-shaped shell, photovoltaic photovoltaic diode chip, two major part lead-in wires, said first major part lead-in wire, photovoltaic diode chip; The copper seat; Second major part lead-in wire welding successively, said photovoltaic diode chips welding is in said copper seat one side, and said ring-shaped shell closely is nested on the interface of homonymy on the said copper seat; And said photovoltaic diode coating wherein, between said ring-shaped shell and copper seat, fill high heat conduction potting resin.
The beneficial effect of the utility model is: on the photovoltaic diode chip, be welded with the copper seat; The heat that can fast Absorption when photovoltaic diode is worked, produces also is dispersed into heat in the air; In ring-shaped shell, be filled with high heat conduction potting resin; Distribute heat is that diode has big operating current fast, powerful characteristics.
Description of drawings
Fig. 1 is the utility model forward sight structural representation;
Fig. 2 is the utility model left side TV structure sketch map;
In the accompanying drawing, the list of parts of each label representative is following:
1, major part lead-in wire, 2, the copper seat, 3, diode chip for backlight unit, 4, high heat conduction potting resin, 5, ring-shaped shell
Embodiment
Below in conjunction with accompanying drawing the principle and the characteristic of the utility model are described, institute gives an actual example and only is used to explain the utility model, is not the scope that is used to limit the utility model.
As shown in Figure 1, said first major part lead-in wire 1-1, photovoltaic diode chip 3; Copper seat 2; Second major part lead-in wire 1-2 welds successively, and said photovoltaic diode chip 3 is welded on said copper seat 2 one sides, and said ring-shaped shell 5 closely is nested on the interface of homonymy on the said copper seat 2; And said photovoltaic diode chip 3 coatings wherein, between said ring-shaped shell 5 and copper seat 2, fill high heat conduction potting resin 4.As shown in Figure 2, major part lead-in wire 1 is welded in copper seat 2 central points, and ring-shaped shell 5 is nested in than on the slightly little interface of copper seat 2 diameters, and high heat conduction potting resin 4 is positioned at ring-shaped shell 5.
The above is merely the preferred embodiment of the utility model, and is in order to restriction the utility model, not all within the spirit and principle of the utility model, any modification of being done, is equal to replacement, improvement etc., all should be included within the protection range of the utility model.
Claims (1)
1. novel photovoltaic diode; Comprise copper seat, ring-shaped shell, photovoltaic diode chip, two major part lead-in wires, it is characterized in that: said first major part lead-in wire, photovoltaic diode chip; The copper seat; Second major part lead-in wire welding successively, said photovoltaic diode chips welding is in said copper seat one side, and said ring-shaped shell closely is nested on the interface of homonymy on the said copper seat; And said photovoltaic diode chip coating wherein, between said ring-shaped shell and copper seat, fill high heat conduction potting resin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2012200041879U CN202423303U (en) | 2012-01-06 | 2012-01-06 | Novel photovoltaic diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2012200041879U CN202423303U (en) | 2012-01-06 | 2012-01-06 | Novel photovoltaic diode |
Publications (1)
Publication Number | Publication Date |
---|---|
CN202423303U true CN202423303U (en) | 2012-09-05 |
Family
ID=46748035
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2012200041879U Expired - Lifetime CN202423303U (en) | 2012-01-06 | 2012-01-06 | Novel photovoltaic diode |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN202423303U (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104112784A (en) * | 2014-07-10 | 2014-10-22 | 南通康比电子有限公司 | Novel photovoltaic diode and production process thereof |
CN105932071A (en) * | 2016-06-20 | 2016-09-07 | 滨州德润电子有限公司 | Low-temperature difficult-to-damage high-power diode |
WO2019010596A1 (en) * | 2017-07-12 | 2019-01-17 | 汪亚军 | Novel photovoltaic diode |
-
2012
- 2012-01-06 CN CN2012200041879U patent/CN202423303U/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104112784A (en) * | 2014-07-10 | 2014-10-22 | 南通康比电子有限公司 | Novel photovoltaic diode and production process thereof |
CN105932071A (en) * | 2016-06-20 | 2016-09-07 | 滨州德润电子有限公司 | Low-temperature difficult-to-damage high-power diode |
WO2019010596A1 (en) * | 2017-07-12 | 2019-01-17 | 汪亚军 | Novel photovoltaic diode |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20120905 |