CN201956345U - GPP (glass passivation pellet) high-voltage diode - Google Patents
GPP (glass passivation pellet) high-voltage diode Download PDFInfo
- Publication number
- CN201956345U CN201956345U CN2011200430139U CN201120043013U CN201956345U CN 201956345 U CN201956345 U CN 201956345U CN 2011200430139 U CN2011200430139 U CN 2011200430139U CN 201120043013 U CN201120043013 U CN 201120043013U CN 201956345 U CN201956345 U CN 201956345U
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- Prior art keywords
- gpp
- chip
- voltage diode
- lead
- wire
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- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
The utility model discloses a GPP (glass passivation pellet) high-voltage diode, which is characterized by comprising a lead 1, solder, a chip and a lead 2. The chip is a high-reliability GPP chip which is protected by an electrophoresis method, and the lead 1, the solder, the chip and the lead 2 form a conical convex head pin design structure and used for matching for welding of the GPP chip. The GPP high-voltage diode has the advantages that firstly, the GPP high-voltage diode is low in high-temperature current leakage compared with a current product, and secondly, reverse surge current resistance of the GPP high-voltage diode is improved.
Description
Technical field
The utility model relates to a kind of GPP high-voltage diode.
Background technology
What existing high-voltage diode adopted is silicon white glues or the protection of polyimides glue, and its high temperature electric leakage is bigger, and anti-reverse surge ability a little less than.
Summary of the invention
Goal of the invention of the present utility model is: at the problem of above-mentioned existence, provide a kind of GPP high-voltage diode.Technical scheme is as follows: the GPP high-voltage diode is characterized in that: this high-voltage diode comprises lead-in wire 1, scolder, chip, lead-in wire 2, and described chip is provided with the GPP chip with the high reliability of electrophoresis protection; Described lead-in wire 1, scolder, chip, lead-in wire 2 are awl plush copper lead design structures, are used for mating with the welding of GPP chip.
1, selects the GPP chip of the high reliability of electrophoresis protection for use;
2, adopt the square hole welding tooling, carry out assembling before the GPP chips welding;
3, adopt the welding of awl plush copper lead design and GPP chip to mate.
In sum, owing to adopted technique scheme, the beneficial effects of the utility model are:
1, the more present product of high-temperature current leakage is little;
2, improve the anti-reverse surge current ability of product.
Description of drawings
Fig. 1 is the utility model circuit connection diagram.
Fig. 2 is the utility model lead design structure contrast schematic diagram.
Fig. 3 is the utility model and original technology high temperature leakage current comparison diagram.
Fig. 4 is that the anti-reverse surge current of the utility model GPP high-voltage diode can be tried hard to.
Mark among the figure: 1---lead-in wire 1, the 2----------scolder; The 3--chip, 4----lead-in wire 2.The former project organization of A representative lead-in wire among Fig. 2, B representative lead-in wire new design structure.
Embodiment
Below in conjunction with accompanying drawing, the utility model is done detailed explanation.
In order to make the purpose of this utility model, technical scheme and advantage clearer,, the utility model is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the utility model, and be not used in qualification the utility model.
As shown in Figure 1, lead-in wire is put into the square hole welding tooling and--put into scolder and--put into chip 1---and put into weld tabs and--put into chip 2---and put into chip and--put into weld tabs--buckling the last welding tooling of putting into lead-in wire---enter welding.The former project organization of A representative lead-in wire among Fig. 2, B representative lead-in wire new design structure.
As shown in Figure 4, data show, the high-voltage diode of GPP protection, the ability of anti-reverse surge ability apparently higher than about the 150mA of present product.
The above only is preferred embodiment of the present utility model; not in order to restriction the utility model; all any modifications of within spirit of the present utility model and principle, being done, be equal to and replace and improvement etc., all should be included within the protection range of the present utility model.
Claims (2)
1. GPP high-voltage diode is characterized in that: this high-voltage diode comprises lead-in wire 1, scolder, chip, lead-in wire 2, and described chip is the GPP chip that is set to the high reliability of electrophoresis protection; Described lead-in wire 1, scolder, chip, lead-in wire 2 are awl plush copper lead design structures, are used for mating with the welding of aforementioned GPP chip.
2. GPP high-voltage diode according to claim 1 is characterized in that: this high-voltage diode is the high-voltage diode that adopts the square hole welding tooling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200430139U CN201956345U (en) | 2011-02-21 | 2011-02-21 | GPP (glass passivation pellet) high-voltage diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200430139U CN201956345U (en) | 2011-02-21 | 2011-02-21 | GPP (glass passivation pellet) high-voltage diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201956345U true CN201956345U (en) | 2011-08-31 |
Family
ID=44500447
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011200430139U Expired - Lifetime CN201956345U (en) | 2011-02-21 | 2011-02-21 | GPP (glass passivation pellet) high-voltage diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201956345U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102945810A (en) * | 2012-10-17 | 2013-02-27 | 如皋市大昌电子有限公司 | Alloying technology for high voltage diode chip |
| CN104037148B (en) * | 2014-05-23 | 2017-02-01 | 南通皋鑫科技开发有限公司 | Low-rejection-rate axial diode lead and soldering method of low-rejection-rate axial diode lead |
| CN107342222A (en) * | 2017-07-28 | 2017-11-10 | 阳信金鑫电子有限公司 | A kind of method that hyperfrequency high-voltage diode is manufactured with GPP chip |
| CN111739812A (en) * | 2020-06-30 | 2020-10-02 | 安徽安美半导体有限公司 | Production process of high-power axial bidirectional diode |
-
2011
- 2011-02-21 CN CN2011200430139U patent/CN201956345U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102945810A (en) * | 2012-10-17 | 2013-02-27 | 如皋市大昌电子有限公司 | Alloying technology for high voltage diode chip |
| CN102945810B (en) * | 2012-10-17 | 2015-03-25 | 如皋市大昌电子有限公司 | Alloying technology for high voltage diode chip |
| CN104037148B (en) * | 2014-05-23 | 2017-02-01 | 南通皋鑫科技开发有限公司 | Low-rejection-rate axial diode lead and soldering method of low-rejection-rate axial diode lead |
| CN107342222A (en) * | 2017-07-28 | 2017-11-10 | 阳信金鑫电子有限公司 | A kind of method that hyperfrequency high-voltage diode is manufactured with GPP chip |
| CN111739812A (en) * | 2020-06-30 | 2020-10-02 | 安徽安美半导体有限公司 | Production process of high-power axial bidirectional diode |
| CN111739812B (en) * | 2020-06-30 | 2021-06-22 | 安徽安美半导体有限公司 | Production process of high-power axial bidirectional diode |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110831 |
|
| CX01 | Expiry of patent term |